Non-transparent thermal layer for silicon carbide substrates
By depositing an opaque thermal layer on the back side of a transparent substrate, the problems of uneven heating and particle generation on the transparent substrate are solved, achieving uniform heating and surface protection, and improving the accuracy and efficiency of temperature control.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2024-08-28
- Publication Date
- 2026-05-29
AI Technical Summary
Transparent substrates suffer from inconsistent heating and particle generation during the heating process, and conductive heating methods are insufficient to solve these problems.
An opaque thermal layer is deposited on the back side of a transparent substrate. By adjusting its composition and thickness to absorb infrared radiation energy, uniform heating is achieved. This layer is then removed after high-temperature treatment to protect the substrate.
Uniform heating control of transparent substrates was achieved, particle generation was reduced, the accuracy and efficiency of temperature control were improved, and the substrate surface was protected.
Smart Images
Figure CN122123196A_ABST
Abstract
Description
Technical Field
[0001] The embodiments of the present invention generally relate to semiconductor processing of semiconductor substrates. Background Technology
[0002] The substrate is typically heated during processing. Heating is usually accomplished using a lamp that radiates energy absorbed by the substrate, causing an increase in its temperature. However, if the substrate material is transparent rather than opaque, the radiant energy is not absorbed by the substrate. Therefore, for transparent substrates, lamps are not an efficient way to heat the substrate. Instead, a substrate support, i.e., a base, is used to heat the transparent substrate using conductive heating. However, the inventors have observed that the use of conductive heating surfaces leads to inconsistent heating of the transparent substrate and particle generation.
[0003] Therefore, the inventors have provided a method for heating an optically non-opaque substrate with improved thermal control. Summary of the Invention
[0004] This document provides a method for improving temperature control of transparent substrates.
[0005] In some embodiments, the method of processing an optically non-opaque substrate may include providing an optically non-opaque substrate having a structured side and an unstructured side, and depositing an opaque thermal layer onto the entire unstructured side of the optically non-opaque substrate, wherein the thickness of the opaque thermal layer is substantially uniform and is subjected to heat treatment exceeding about 900°C.
[0006] In some embodiments, the method may further include an optically non-opaque substrate of a silicon carbide substrate, processing the optically non-opaque substrate having an opaque thermal layer, wherein the optically non-opaque substrate undergoes a heat treatment exceeding approximately 1300°C, and wherein multiple structures are formed on the structural sides of the optically non-opaque substrate, and back-side grinding of the optically non-opaque substrate to remove the opaque thermal layer, at least one of such structures including a gate of a power transistor, a heat treatment of approximately 1650°C or greater, an opaque thermal layer composed of amorphous carbon, an opaque thermal layer composed of multiple layers of amorphous carbon material, and adjacent layers of multiple layers having different optical properties, an opaque thermal layer composed of alternating layers of different materials, wherein a first layer of the alternating layers is adjusted to absorb a first range of wavelengths, and a second layer of the alternating layers below the first layer is adjusted to reflect the first range of wavelengths back to the first layer, wherein the first layer of the alternating layers is composed of amorphous carbon material, and the second layer of the alternating layers is composed of amorphous silicon (Si) based material, wherein the amorphous silicon (Si) based material is amorphous SiH. x Amorphous SiC x H y Amorphous SiC x N y H zAmorphous SiO x H y Or amorphous SiCONH, the heat treatment includes radiant energy from at least one lamp-based energy source, heat treatment at approximately 1850°C or greater, the opaque thermal layer is composed of multiple layers, each of which is adjusted to absorb different wavelength ranges, the different wavelength ranges overlap, the opaque thermal layer is adjusted to absorb a first wavelength range, the first wavelength range is smaller than and within a second wavelength range, the second wavelength range is emitted by an infrared emitter of the processing chamber, and / or the opaque thermal layer is adjusted to absorb the wavelength range emitted by the infrared emitter of the processing chamber.
[0007] In one embodiment, the non-transient computer-readable medium has instructions stored thereon that, when executed, cause a method for thermally treating an optically non-opaque substrate to be performed. The method may include providing an optically non-opaque substrate having a structured side and an unstructured side, and depositing an opaque thermal layer on the entire unstructured side of the optically non-opaque substrate, wherein the opaque thermal layer is of uniform thickness and withstands a temperature of approximately 2000°C, and absorbs radiant energy from a lamp-based energy source.
[0008] In some embodiments, the method of non-transient computer-readable medium includes an opaque thermal layer composed of amorphous carbon and / or an opaque thermal layer composed of multiple layers of amorphous carbon material, wherein adjacent layers of the multiple layers have different optical properties, or an opaque thermal layer composed of alternating layers of different materials, wherein the alternating layer includes a first layer of alternating layers and a second layer of alternating layers, wherein the first layer is composed of amorphous carbon material and the second layer is composed of amorphous silicon (a-Si) based material.
[0009] Other and further implementation methods will be disclosed later. Attached Figure Description
[0010] The embodiments of the invention briefly summarized above and discussed in more detail below can be understood by referring to the exemplary embodiments depicted in the accompanying drawings. However, the drawings only illustrate typical embodiments of the invention and are therefore not to be regarded as limiting the scope, as other equivalent embodiments of the invention are permissible.
[0011] Figure 1 This is a method for processing optically non-opaque substrates according to some embodiments of the present invention.
[0012] Figure 2 A cross-sectional view of a processed optically non-opaque substrate is depicted according to some embodiments of the present invention.
[0013] Figure 3 This is a method for depositing an opaque thermal layer according to some embodiments of the present invention.
[0014] Figure 4 A cross-sectional view depicting the deposition of an opaque thermal layer onto an optically non-opaque substrate according to some embodiments of the present invention.
[0015] Figure 5 This is a method for depositing an opaque thermal layer according to some embodiments of the present invention.
[0016] Figure 6 A cross-sectional view depicting the deposition of an opaque thermal layer onto an optically non-opaque substrate according to some embodiments of the present invention.
[0017] Figure 7 A top view depicting an integration tool according to some embodiments of the present invention.
[0018] To facilitate understanding, the same reference numerals have been used as much as possible to refer to common elements in the drawings. The illustrations are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further explanation. Detailed Implementation
[0019] This method provides improved temperature control for the thermal processing of optically non-opaque substrates. It substantially improves the control of both temperature rise and fall compared to conductive heating methods. By integrating an opaque thermal layer onto the back side of a transparent substrate, the transparent substrate can be heated using radiant energy from a lamp source with non-conductive heating. The opaque thermal layer can be tailored based on its composition and thickness to absorb light, particularly the infrared (IR) band, which is the most efficient way to heat the substrate. Furthermore, the opaque thermal layer provides good mechanical and tribological properties, protecting the transparent substrate when interacting with the end effector during its movement. Therefore, the opaque thermal layer remains integrated with the transparent substrate throughout the entire processing flow until the final back-side grinding step, in which the opaque thermal layer is removed.
[0020] Silicon carbide (SiC) materials are becoming increasingly popular for power devices, such as power transistors and the like. SiC substrates are optically opaque and can vary from clear (optically transparent) to yellowish-transparent (optically translucent), depending on the doping level of the SiC substrate. In some embodiments, the SiC substrate is optically transparent. In some embodiments, the SiC substrate is optically translucent. In some embodiments, the SiC substrate can be a region of substrate that varies between optically transparent and optically translucent regions. SiC substrates require temperatures exceeding 1500°C for processing, substantially higher than typical silicon substrates. Many front-end processes, including gate dielectric deposition, epitaxial growth, rapid thermal processing (RTP), and silicide formation, involve thermal processing using lamps to heat the substrate. However, due to the optical transparency of SiC substrates, the radiant energy of the lamps used for heating is insufficient for SiC substrates. High-voltage MOSFETs constructed on SiC substrates are also more susceptible to scratches during manipulation by robotic arms and blades. The semiconductor industry has traditionally used substrates as heat absorbers to indirectly heat SiC substrates through conduction. However, conductive heating is insufficient and leads to temperature inconsistencies and particle generation problems, especially at higher temperatures above 1300°C.
[0021] Figure 1 Is it a matter of handling Figure 2 The method 100 depicts an optically opaque substrate 202 as shown in view 200A. The optically opaque substrate 202 has a structured side 204 on which a semiconductor structure is formed and an unstructured side 206 on which no structure is formed, or a back side (unstructured side) of the optically opaque substrate 202. The structure may include a power transistor structure comprising a gate dielectric material and a polycrystalline Si or metal gate and the like. The gate structure may undergo high-temperature doping / implantation and other processes during transistor formation. In some embodiments, the optically opaque substrate 202 is formed of SiC material. In block 102, the optically opaque substrate 202 is flipped to expose the unstructured side 206 of the optically opaque substrate 202, as... Figure 2 As depicted in view 200B. In frame 104, an opaque thermal layer 208 is deposited onto the unstructured side 206 of an optically non-opaque substrate 202, as shown. Figure 2 As depicted in view 200C. During the processing of the optically non-opaque substrate 202, the opaque thermal layer 208 becomes an integrated component of the optically non-opaque substrate 202. In some embodiments, the opaque thermal layer 208 covers the entire unstructured side of the optically non-opaque substrate 202. In some embodiments, the opaque thermal layer 208 covers a substantial portion of the entire unstructured side 206 of the optically non-opaque substrate 202.
[0022] Whether formed as a single layer or multiple layers (most of which will be discussed later), the opaque thermal layer 208 has a substantially uniform thickness 220. In some embodiments, the uniform thickness 220 has a thickness variation of about + / - 10% or less. In some embodiments, the uniform thickness 220 has a thickness variation of about + / - 5% or less. In some embodiments, the uniform thickness 220 has a thickness variation of about + / - 2% or less. In some embodiments, the uniform thickness 220 has a thickness variation of about + / - 1% or less. The opaque thermal layer 208 serves to provide thermal control of the optically non-opaque substrate 202 and also protects the optically non-opaque substrate 202 from the robotic arm and end effector during transport. In some embodiments, the optically non-opaque substrate 202 has one or more materials deposited on the optically non-opaque substrate 202 using one or more chemical vapor deposition (CVD) or plasma-enhanced CVD (PECVD) processes in one or more deposition chambers, as discussed later. The chemical composition of the deposit or multiple deposits and / or the thickness of the deposits can be used to modify the optical properties of the opaque thermal layer 208 to further control the temperature of the optically non-opaque substrate 202 during subsequent processing.
[0023] In frame 106, the optically non-opaque substrate 202 is flipped to expose the structural side 204 of the optically non-opaque substrate 202 (e.g., diodes and / or MOSFET transistors, etc.). Figure 2 As depicted in view 200D. In block 108, the optically opaque substrate 202 undergoes a process including thermal treatments exceeding 900°C. For example, silicide formation of the source contacts can reach temperatures of approximately 900°C to approximately 1100°C, dopant activation annealing can reach temperatures of approximately 1600°C to approximately 1800°C, and epitaxial processing can reach temperatures of approximately 1600°C to approximately 2000°C. In some embodiments, implantation or doping of the optically opaque substrate 202 is part of the process, and the optically opaque substrate 202 can be heated to temperatures of 1650°C or higher. In some embodiments, the temperature can be 1850°C or higher for a shorter period. In some embodiments, the temperature can reach approximately 2000°C for a very short period. The benefits of a short annealing period at high temperatures are higher dopant activation levels, reduced growth of some crystal defects, and achieving the desired dopant distribution. High annealing temperatures are required, for example, to activate dopants into the material, such as SiC substrates. Processing may include other processes such as structure formation, etching, and / or deposition and similar processes to achieve the resulting optically non-opaque substrate. In block 110, the optically non-opaque substrate undergoes planarization processes, such as, for example, but not limited to, back-side grinding to remove the integrated opaque thermal layer, such as... Figure 2As depicted in view 200E. The opaque thermal layer 208 is integrated as part of the substrate, as this layer functions as both a thermal controller and a protector of the substrate to minimize particle formation and damage to the back side of the substrate during substrate processing. When substrate processing is complete, the opaque thermal layer 208 may remain in place or be removed, for example, to expose the back side contacts and the like.
[0024] Figure 3 This is method 300 (i.e., the first method with respect to frame 104) which involves depositing an opaque thermal layer 208 onto an optically non-opaque substrate 202 after the substrate has been flipped. The opaque thermal layer 208 may be formed from a single layer of a single composition having a single set of optical properties that affect temperature control throughout the optically non-opaque substrate 202, such as... Figure 2 As depicted in views 200C and 200D. In this case, depending on the thickness and composition of the material forming the opaque thermal layer 208, the opaque thermal layer 208 absorbs radiant energy from the lamp source within the heating chamber. In method 300, a single material is used, but with different optical properties in different layers. In frame 302, the first layer 402 of the opaque thermal layer 208 is deposited on an optically non-opaque substrate 202, as... Figure 4 As depicted in view 400. In some embodiments, the first layer 402 may be an amorphous C layer having a first set of optical properties.
[0025] In frame 304, the second layer 404 of the opaque thermal layer 208 is deposited on the optically non-opaque substrate 202, such as Figure 4 As depicted in view 400. In box 306, the optical properties of the second layer 404 are altered during deposition. These optical properties include, but are not limited to, the refractive index (RI) or n-value of the layer and the extinction coefficient or k-value of the layer. Optical properties can be altered during deposition by changing the amount or type of precursors during deposition of similar materials such as, but not limited to, amorphous C or amorphous SiC. x H y Similar to, for example, the optical properties of amorphous C:H films (the n and k values can be adjusted by changing the hydrogen content and the carbon-to-carbon bonding configuration (sp2 or sp3)) and similar. In some embodiments, the second layer 404 may be an amorphous C layer having a second set of optical properties different from the first set. In block 308, the deposition process (e.g., layers 402A, 404A, etc.) can be repeated any number of times until the desired overall thermal control is achieved by varying the thickness of the transmissive layer and / or the optical properties of the transmissive layer. In some embodiments, to provide protection for the optically non-opaque substrate 202, when the substrate is flipped, the uppermost layer is a material that provides a smooth, hard surface, such as, but not limited to, amorphous C or amorphous SiC. x H ySimilar to.
[0026] The different optical properties of each layer cause incident infrared waves of different frequencies to be absorbed in each layer, generating heat conducted through the layers to the optically non-opaque substrate 202 to allow for heating of the substrate at multiple wavelengths. However, using a single opaque thermal layer, the optical properties of the opaque thermal layer absorb a smaller range of infrared wavelengths, causing a smaller amount of heat to be conducted back to the optically non-opaque substrate, resulting in reduced thermal performance of the opaque thermal layer. Another advantage of using a single material but having different optical properties in a multilayer configuration is that multiple layers can be deposited using a single chamber while still increasing the thermal performance and wavelength range of the opaque thermal layer. In some embodiments, the optical properties of the first layer 402 can be adjusted to absorb a first range of infrared wavelengths. The optical properties of the second layer 404 can be adjusted to reflect the first range of infrared wavelengths back to the first layer 402. Reflecting the first range of infrared wavelengths back to the first layer 402 by the second layer 404 increases the absorption efficiency of the first layer 402 and substantially increases the conductive heating efficiency of the optically non-opaque substrate 202. In some embodiments, the optical properties of the first layer 402 can be adjusted to absorb a first range of infrared wavelengths, and the optical properties of the second layer 404 can be adjusted to absorb a second range of infrared wavelengths. The absorption of the first range of infrared wavelengths combined with the absorption of the second range of infrared wavelengths allows the opaque thermal layer 208 to provide heat conduction to the optically non-opaque substrate 202, for example, in multiple chambers operating at different infrared frequencies (multiple processing steps, etc.), without requiring changes to the opaque thermal layer 208, saving time and cost.
[0027] Figure 5 This is method 500 (i.e., the first method with respect to block 104) which involves depositing an opaque thermal layer 208 onto an optically non-opaque substrate 202 after the substrate has been flipped. In method 500, more than one material is used in alternating layers, each with different optical properties. In block 502, a first layer 602 of the opaque thermal layer 208 is deposited on the optically non-opaque substrate 202, as... Figure 6 As depicted in view 600. In some embodiments, the first layer 602 may be an amorphous C layer having a first set of optical properties. In block 504, a second layer 604 of the opaque thermal layer 208 is deposited on the optically non-opaque substrate 202, as shown. Figure 6 As depicted in view 600. In some embodiments, the second layer 604 may be, but is not limited to, based on an amorphous silicon material, such as amorphous SiH. x Amorphous SiC x H y Amorphous SiC x N y H z Amorphous SiO x Hy Amorphous SiCONH, or similar substances.
[0028] During the deposition of the first layer 602 or the second layer 604, the optical properties of the layers can be further modified, in addition to simply changing the optical properties of the material, to further provide thermal control of the optically opaque substrate 202. Optical properties include, but are not limited to, the refractive index (n) or extinction coefficient (k) values of the layers. Optical properties can be altered during deposition by changing the amount or type of precursors present during deposition. In block 506, the deposition process (e.g., layers 602A, 604A, etc.) can be repeated any number of times until the desired overall thermal control is achieved through variations in layer thickness and / or variations in the optical properties of the layers. In some embodiments, layers of similar materials may have different thicknesses or the same thickness. In some embodiments, to provide protection for the optically opaque substrate 202, the uppermost layer is a material providing a smooth, hard surface, such as, but not limited to, amorphous C and the like, when the substrate is flipped. The different optical properties of the layers cause incident infrared waves of different frequencies to be absorbed in each layer to conduct heat back through the optically opaque substrate 202, allowing for heating of the substrate at multiple wavelengths.
[0029] In some embodiments, the optical properties of the first layer 602 can be adjusted to absorb a first range of infrared wavelengths. The optical properties of the second layer 604 can be adjusted to reflect the first range of infrared wavelengths back to the first layer 602. Reflecting the first range of infrared wavelengths back to the first layer 602 by the second layer 604 increases the absorption efficiency of the first layer 602 and substantially increases the conductive heating efficiency of the optically non-opaque substrate 202. In some embodiments, the optical properties of the first layer 602 can be adjusted to absorb the first range of infrared wavelengths, and the optical properties of the second layer 604 can be adjusted to absorb a second range of infrared wavelengths. The absorption of the first range of infrared wavelengths combined with the absorption of the second range of infrared wavelengths allows the opaque thermal layer 208 to provide heat conduction to the optically non-opaque substrate 202, for example, in multiple chambers operating at different infrared frequencies (multiple processing steps, etc.), without needing to change the opaque thermal layer 208, saving time and cost.
[0030] Using different materials in a multilayer of opaque thermal layers offers the advantage of greater tunability compared to using a single material with different optical properties. For example, amorphous C:H materials can have a refractive index of about 1.6 to about 1.94 and an extinction coefficient of about 0.03 to about 0.65. Amorphous Si:H materials can have a refractive index of about 3.3 to about 4.5 and an extinction coefficient of about 0.019 to about 0.24. x N y H zThe material can have a refractive index of approximately 1.95 to approximately 2.4. SiC x H y The material can have a refractive index of approximately 2.1 to approximately 2.6 and an extinction coefficient of approximately zero. SiC x N y H z The material can have a refractive index of approximately 2.0 to approximately 2.2. By changing the material and optical properties of the layers, multilayer opaque thermal layers with multiple materials offer a substantial advantage in terms of adjustment flexibility to control the thermal properties of optically non-opaque substrates compared to multilayer opaque thermal layers with a single material or a single-layer opaque thermal layer. While different chambers can be used to deposit multilayers of different materials, a single integrated tool can be used to achieve the deposition process. A single integrated tool includes, but is not limited to, […]. Figure 7 The integrated tool described herein. The adjustability of this invention allows for easy modification of the opaque thermal layer on a substrate-by-substrate or chamber-by-chamber basis, based on the infrared heating wavelength of the substrate and / or chamber and the like.
[0031] The method described above allows for adjustment of the opaque thermal layer 208 to achieve overall optical properties that allow for precise temperature response to the optically opaque substrate 202. When the optically opaque substrate 202 is placed in a heating chamber using radiation energy as a heating source, the radiation energy travels through the optically opaque substrate 202 with negligible temperature variations. When the opaque thermal layer 208 is integrated into the optically opaque substrate 202, it intercepts the radiation energy traveling through the optically opaque substrate 202 and allows for predictable control over how radiation energy from the lamp is converted into heat energy flowing back to the optically opaque substrate 202. The opaque thermal layer 208 can respond quickly and precisely to changes in radiation energy and its transfer into the optically opaque substrate, which cannot be achieved using conductive heaters such as those via a heating base and the like. In some embodiments, the opaque thermal layer 208 may have optical properties tuned to the IR frequency range of a lamp used in a rapid temperature processing (RTP) chamber to increase the heating efficiency and temperature change control speed (response time) of the optically non-opaque substrate 202.
[0032] The methods described herein can be executed in an individual processing chamber or in a cluster tool, such as, for example, as discussed later. Figure 7The integration tool 700 is described. The advantages of using the integration tool 700 are no vacuum disruption between depositions and no substantial processing delay. The integration tool 700 includes a vacuum-sealed processing platform 701, a factory interface 704, and a system controller 702. The processing platform 701 includes multiple processing chambers, such as 714A, 714B, 714C, 714D, 714E, 714F, and 714G, operatively coupled to vacuum substrate transfer chambers (transfer chambers 703A, 703B). The factory interface 704 locks the chambers via one or more load lock chambers (such as...). Figure 7 The two load-locking chambers 706A and 706B shown are operatively coupled to the transfer chamber 703A.
[0033] In some implementations, the factory interface 704 includes at least one docking station 707 and at least one factory interface robot 738 to facilitate the transfer of semiconductor substrates. The docking station 707 is configured to accept one or more front-opening wafer transfer cassettes (FOUPs). Three FOUPs, such as 705A, 705B, and 705C, are shown... Figure 7 In this implementation, a factory interface robot 738 is configured to transfer a substrate from a factory interface 704 through load-locking chambers such as 706A and 706B to a processing platform 701. Load-locking chambers 706A and 706B each have a first port coupled to the factory interface 704 and a second port coupled to a transfer chamber 703A. Load-locking chambers 706A and 706B are coupled to a pressure control system (not shown) that pumps and exhausts load-locking chambers 706A and 706B to facilitate substrate transfer between the vacuum environment of transfer chamber 703A and the substantially peripheral (e.g., atmospheric) environment of the factory interface 704. Transfer chambers 703A and 703B have vacuum robots 742A and 742B housed within their respective chambers. Vacuum robot 742A is capable of transferring substrate 721 between load locking chambers 706A and 706B, processing chambers 714A and 714G, and cooling station 740 or pre-cleaning station 742. Vacuum robot 742B is capable of transferring substrate 721 between cooling station 740 or pre-cleaning station 742 and processing chambers 714B, 714C, 714D, 714E, and 714F.
[0034] In some embodiments, processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G are coupled to transfer chambers 703A and 703B. Processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G may include a pre-cleaning chamber, a CVD chamber, a PECVD chamber, an ALD chamber, a rapid temperature processing (RTP) chamber, and / or a PVD chamber. Processing chambers may include any chamber suitable for performing all or part of the methods described herein as discussed above. In some embodiments, one or more optional service chambers (shown as 716A and 716B) may be coupled to transfer chamber 703A. Service chambers 716A and 716B may be configured to perform other substrate processing, such as degassing, orientation, substrate measurement, cooling, and similar processes.
[0035] System controller 702 controls the operation of tool 700 by directly controlling processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G, or by controlling a computer (or controller) associated with processing chambers 714A, 714B, 714C, 714D, 714E, 714F, and 714G, as well as tool 700. During operation, system controller 702 can collect data and feedback from the respective chambers and systems to optimize the performance of tool 700. System controller 702 generally includes a central processing unit (CPU) 730, memory 734, and support circuitry 732. CPU 730 can be any type of general-purpose computer processor usable in an industrial setting. Support circuitry 732 is conventionally coupled to CPU 730 and may include cache, clock circuitry, input / output subsystems, power supply, and the like. Software routines such as those described above can be stored in memory 734, and when executed by CPU 730, CPU 730 is transformed into a dedicated computer (system controller 702). Software routines can also be stored and / or executed via a remote second controller (not shown) located in tool 700.
[0036] Memory 734 is in the form of a computer-readable storage medium containing instructions that, when executed by CPU 730, cause semiconductor processing and device operation. The instructions in memory 734 are in the form of a program product, such as a program that performs the methods of the present invention. The program code may conform to any of several different programming languages. In one example, the present invention may be implemented as a program product stored on a computer-readable storage medium used by a computer system. The program product defines the functionality of aspects of the program product (including the methods described herein). Examples of computer-readable storage media include, but are not limited to: non-writable storage media on which information is permanently stored (e.g., read-only memory devices within a computer, such as CD-ROM discs readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and writable storage media on which variable information is stored (e.g., floppy disks within a disk drive or hard disk drive, or any type of solid-state random access semiconductor memory). Such computer-readable storage media are aspects of the present invention when they carry computer-readable instructions instructing the functions of the methods described herein.
[0037] Embodiments of the invention can be implemented in hardware, firmware, software, or any combination thereof. Embodiments can also be implemented using instructions stored in one or more computer-readable media, which can be read and executed by one or more processors. The computer-readable media may include any mechanism for storing or transferring information in a machine-readable form (e.g., a computing platform or a “virtual machine” running on one or more computing platforms). For example, the computer-readable media may include any suitable form of volatile or non-volatile memory. In some embodiments, the computer-readable media may include non-transitory computer-readable media.
[0038] Although the foregoing describes embodiments of the present invention, other and further embodiments of the present invention may be conceived without departing from the basic scope of the present invention.
Claims
1. A method for processing an optically non-opaque substrate, the method comprising: Provides the optically non-opaque substrate having a structured side and an unstructured side; and An opaque thermal layer is deposited on the entire unstructured side of the optically non-opaque substrate, wherein the thickness of the opaque thermal layer is substantially uniform and it is subjected to heat treatment exceeding approximately 900°C.
2. The method of claim 1, wherein the optically non-opaque substrate is a silicon carbide substrate.
3. The method of claim 1, further comprising: Processing the optically non-opaque substrate having the aforementioned opaque thermal layer, wherein the optically non-opaque substrate undergoes a heat treatment exceeding approximately 1300°C, and wherein a plurality of structures are formed on the structural side of the optically non-opaque substrate; and The optically non-opaque substrate is back-ground to remove the opaque thermal layer.
4. The method of claim 3, wherein at least one structure of the structure comprises the gate of a power transistor.
5. The method of claim 1, wherein the heat treatment is at approximately 1650°C or higher.
6. The method of claim 1, wherein the opaque thermal layer is composed of amorphous carbon.
7. The method of claim 1, wherein the opaque thermal layer is composed of multiple layers of amorphous carbon material, and wherein adjacent layers of the multiple layers have different optical properties.
8. The method of claim 1, wherein the opaque thermal layer is composed of alternating layers of different materials.
9. The method of claim 8, wherein the first layer of the alternating layers is adjusted to absorb a first range of wavelengths, and wherein the second layer of the alternating layers below the first layer is adjusted to reflect the first range of wavelengths back to the first layer.
10. The method of claim 8, wherein the first layer of the alternating layer is composed of an amorphous carbon material, and the second layer of the alternating layer is composed of an amorphous silicon (Si)-based material.
11. The method of claim 10, wherein the amorphous silicon (Si)-based material is amorphous SiH. x Amorphous SiC x H y Amorphous SiC x N y H z Amorphous SiO x H y Or amorphous SiCONH.
12. The method of claim 1, wherein the heat treatment comprises radiant energy from at least one lamp-based energy source.
13. The method of claim 1, wherein the heat treatment is at approximately 1850°C or higher.
14. The method of claim 1, wherein the opaque thermal layer comprises multiple layers, each of which is adjusted to absorb a different range of wavelengths.
15. The method of claim 14, wherein the different wavelength ranges overlap.
16. The method of claim 1, wherein the opaque thermal layer is adjusted to absorb a first range of wavelengths, the first range of wavelengths being smaller than and within a second range of wavelengths, the second range of wavelengths being emitted by an infrared emitter of the processing chamber.
17. The method of claim 1, wherein the opaque thermal layer is adjusted to absorb wavelengths emitted by the infrared emitter of the processing chamber.
18. A non-transitory computer-readable medium having a plurality of instructions stored thereon, wherein, when executed, the instructions cause a method for thermally treating an optically non-opaque substrate to be performed, the method comprising: Provides the optically non-opaque substrate having a structured side and an unstructured side; and An opaque thermal layer is deposited on the entire unstructured side of the optically non-opaque substrate, wherein the opaque thermal layer has a substantially uniform thickness, withstands a temperature of approximately 2000°C, and absorbs radiant energy from a lamp-based energy source.
19. The non-transient computer-readable medium of claim 18, wherein the opaque thermal layer is composed of amorphous carbon.
20. The non-transient computer-readable medium of claim 18, wherein the opaque thermal layer is composed of multiple layers of amorphous carbon material, and wherein adjacent layers of the multiple layers have different optical properties, or wherein the opaque thermal layer is composed of alternating layers of different materials, the alternating layers comprising a first layer of the alternating layers and a second layer of the alternating layers, the first layer being composed of amorphous carbon material and the second layer being composed of amorphous silicon (a-Si) based material.