Au-WS2-Au van der Waals Schottky junction photoelectric sensing unit, fabrication and application

By using the Au-WS2-Au van der Waals Schottky junction photoelectric sensing unit and employing dry transfer technology to construct high-quality van der Waals contacts, the complexity of fabrication and the Fermi level pinning effect of existing spectroscopic instruments are solved, enabling miniaturized and high-performance spectroscopic detection.

CN122269826APending Publication Date: 2026-06-23NANJING UNIV OF POSTS & TELECOMM
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV OF POSTS & TELECOMM
Filing Date
2026-03-31
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing computational spectrometers suffer from complex fabrication processes, easy interface damage, severe Fermi level pinning effects, and difficulties in controlling photoelectric response, making it difficult to achieve miniaturization, portability, and high-performance spectral detection.

Method used

An Au-WS2-Au van der Waals Schottky junction optoelectronic sensing unit is adopted. High-quality van der Waals contacts are constructed through dry transfer technology to eliminate the Fermi level pinning effect, simplify the fabrication process, and improve device stability and optoelectronic control performance.

Benefits of technology

It achieves high integration and high performance of the device, with sub-nanometer spectral reconstruction accuracy, low power consumption, and low complexity of spectral detection, making it suitable for on-chip integration and portable applications.

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Abstract

The application discloses an Au-WS2-Au van der Waals Schottky junction type photoelectric sensing unit, preparation and application, and belongs to the technical field of semiconductor devices. The sensing unit is composed of a substrate, a two-dimensional material layer transferred by a dry method and an Au electrode, the two-dimensional material is preferably WS2, the Au electrode forms a van der Waals contact with the two-dimensional material and constitutes a Schottky junction; the structure can effectively inhibit Fermi level pinning effect, realize dynamic modulation of a Schottky barrier, and produce characteristic reverse-bipolar light response and stable spectral modulation varying with wavelength under the regulation of a gate; the occupied area is only about 73 mu m 2 , and the sensing unit can accurately reconstruct monochromatic and broadband spectra in the 380-680 nm visible light band, with an average reconstruction accuracy of 0.746 nm and a spectral resolution better than 10 nm. The sensing unit can be applied to a miniature computing spectrometer, effectively solves the technical defects of complex preparation and difficult regulation of existing devices, and meets the requirements of miniaturization and integration detection.
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