A dual-beam laser chip welding device, a welding method and a chip packaging structure

Abstract

This invention discloses a dual-beam laser chip welding apparatus, welding method, and chip packaging structure, relating to the field of semiconductor packaging technology. The key technical points are: it includes a laser, a beam shaping element, bonding wires, and a control module. The surface of the bonding wires is covered with an absorption layer. The laser is configured to emit a first laser beam and a second laser beam with discrete functions. The first laser beam acts on the absorption layer to generate a plasma shock wave, causing the bonding wires to undergo plastic deformation and contact the bonding points of the chip and / or packaging substrate. The second laser beam, after being processed by the beam shaping element, converts a Gaussian beam into a flat-top beam, which directly irradiates the bonding points to provide welding heat. The control module is configured to adjust the laser parameters of the laser based on received feedback signals. This invention achieves clean welding of bonding wires to chips and pins while improving welding quality and efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and more specifically, to a dual-beam laser chip welding apparatus, welding method, and chip packaging structure. Background Technology

[0002] The semiconductor packaging industry is currently achieving breakthroughs across the entire chain, encompassing "material upgrades, precision processes, intelligent equipment, and scenario adaptation," becoming a core technological support for the development of fields such as 5G, new energy, and advanced storage. Among these, chip interconnect technology is a crucial link in ensuring reliable electrical connectivity, signal transmission, heat dissipation, and mechanical support for chips. It directly determines the performance, reliability, and integration of the final product and is key to driving the development of advanced packaging and achieving heterogeneous integration.

[0003] Currently, in chip packaging metal interconnect technology, various processes have formed a differentiated development pattern based on performance requirements and packaging scenarios, and continuous breakthroughs are being made in material adaptation and precision upgrades. Ultrasonic bonding, as a core technology for low-temperature solid-state connections, achieves interface atomic diffusion through high-frequency vibration of 20kHz~200kHz. This technology achieves submicron-level mounting accuracy and reduces thermal impact in copper wire bonding by concentrating local energy, adapting to the high-density packaging requirements of consumer electronics. Thermo-ultrasonic bonding combines ultrasonic energy with gentle heating (typically 150~250℃), becoming the mainstream solution for gold wire and palladium-plated copper wire bonding. It enhances connection reliability through metal softening and plastic deformation, achieving interconnects with a pitch of less than 10μm in 3DIC stacks, and is compatible with Cu-Cu fluxless bonding processes. Hot-press bonding relies on high temperature and high pressure (temperature 300~450℃, pressure 50~200MPa) to drive metal diffusion. In power device packaging, there are records of using silver sintering hot-pressing processes to achieve a shear strength of 50MPa for SiC modules and improve temperature resistance to 300℃.

[0004] However, while metal interconnect technologies such as ultrasonic bonding, thermo-ultrasonic bonding, and thermocompression bonding have achieved mass production in multiple scenarios, they still suffer from significant common defects. At the pressure application level, all these technologies rely on contact pressure sources to transfer loads: the high hardness of the copper wire in ultrasonic bonding requires greater bonding force, easily leading to defects such as pad peeling and silicon-based "craters," especially when the pad metallization layer is thin, the risk of damage increases dramatically; while the high pressure of thermocompression and thermo-compression bonding can enhance atomic diffusion, it easily causes mechanical stress concentration in brittle materials such as glass substrates and thin chips, leading to cracks or delamination failures. At the heating control level, slow heat transfer and diffusion are prominent issues. Although the heating in thermocompression and thermo-ultrasonic bonding is more concentrated, there is still the problem of heat conduction into the chip interior, potentially affecting the current carrying capacity and long-term reliability of heat-sensitive devices such as third-generation semiconductors, and easily exacerbating the abnormal growth of intermetallic compounds (IMCs).

[0005] Therefore, how to research and design a dual-beam laser chip welding device, welding method, and chip packaging structure that can overcome the above-mentioned defects is a problem that we urgently need to solve. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the present invention aims to provide a dual-beam laser chip welding device, welding method, and chip packaging structure, which can improve welding quality and efficiency while achieving clean welding of bonding wires to chips and pins.

[0007] The above-mentioned technical objective of the present invention is achieved through the following technical solution:

[0008] In a first aspect, a dual-beam laser chip bonding apparatus is provided, comprising a laser, a beam shaping element, a bonding wire, and a control module, wherein the surface of the bonding wire is covered with an absorption layer.

[0009] The laser is configured to emit a first laser beam and a second laser beam, which have separate functions, wherein:

[0010] The first laser beam acts on the absorption layer to generate a plasma shock wave, causing the bonding wire to undergo plastic deformation and come into contact with the bonding points of the chip and / or the packaging substrate.

[0011] The second laser beam, after being processed by the beam shaping element, converts the Gaussian beam into a flat-top beam.

[0012] The flat-top beam directly irradiates the bonding point to provide welding heat;

[0013] The control module is configured to adjust the laser parameters of the laser based on the received feedback signal; wherein the feedback signal is generated based on real-time monitoring of temperature, pressure and / or molten pool morphology during the welding process.

[0014] Furthermore, the beam shaping element is a microlens array or a refractive beam shaper.

[0015] Furthermore, the absorption layer is any one of graphite, black paint, or light-absorbing metal film, and is applied to the surface of the bonding wire by spraying.

[0016] Furthermore, the first laser beam is a pulsed laser with a pulse width of less than 300 ns, and the second laser beam is a continuous laser or a pulsed laser.

[0017] Furthermore, the device also includes an online monitoring system, which includes at least one of a spectrometer, a pressure sensor, and a high-speed camera, for real-time acquisition of temperature, pressure, and molten pool morphology information corresponding to the feedback signal.

[0018] Furthermore, the control module is specifically configured to execute the following control logic:

[0019] When the intensity of the scattered light monitored by the spectrometer is level I and the pressure monitored by the pressure sensor is level A, the output power of the first laser beam and the second laser beam is increased, or the output power of the first laser beam is increased while the pulse width of the second laser beam is decreased.

[0020] When the scattered light intensity is level I and the pressure is level B, the output power of the first laser beam is increased.

[0021] When the scattered light intensity is level I and the pressure is level C, the output power of the first laser beam is increased, while the output power of the second laser beam is decreased or its pulse width is increased.

[0022] When the scattered light intensity is level II and the pressure is level A, control the increase of the output power of the second laser beam or the decrease of its pulse width.

[0023] When the scattered light intensity is level II and the pressure is level C, control the output power of the second laser beam to decrease or increase its pulse width.

[0024] Among them, the intensity of scattered light is: Level I < Level II, and the pressure is: Level A < Level B < Level C.

[0025] Secondly, a dual-beam laser chip welding method is provided, including the following steps:

[0026] S1: An absorption layer is formed on the surface of the bonding line;

[0027] S2: Place the chip on the packaging substrate and irradiate the bonding points on the chip and / or the packaging substrate with a second laser beam to remove the oxide layer on the surface of the bonding points;

[0028] S3: Move the bonding wire above and close to the bonding point;

[0029] S4: The absorption layer is irradiated with a first laser beam to excite a plasma shock wave, causing the bonding wire to undergo plastic deformation and press against the bonding point; at the same time, the bonding point is irradiated with a second laser beam converted into a flat-top beam by a beam shaping element to provide the heat required for welding.

[0030] S5: During the welding process, the control module dynamically adjusts the laser parameters of the first laser beam and / or the second laser beam according to the received feedback signal, wherein the feedback signal is generated based on real-time monitoring of temperature, pressure and / or molten pool morphology during the welding process.

[0031] Furthermore, the centers of the first laser beam and the second laser beam coincide.

[0032] Furthermore, the energy distribution non-uniformity of the flat-top light spot of the second laser beam is less than 5%.

[0033] Thirdly, a chip packaging structure is provided, wherein the chip in the chip packaging structure is interconnected with the packaging substrate or bonding wires using a dual-beam laser chip welding method as described in any one of the first aspects.

[0034] Compared with the prior art, the present invention has the following beneficial effects:

[0035] 1. Compared with the heating methods of metal interconnect technologies such as ultrasonic bonding, thermo-ultrasonic bonding, and thermo-press bonding, laser heating can achieve localized heating of the welding point, avoiding damage to the bonding point of the chip or packaging substrate caused by high-frequency vibration. At the same time, if a nanosecond or picosecond laser is used, the short heating time and concentrated heat can prevent heat from being conducted into the chip. In addition, the present invention uses a homogenized flat-top laser to heat the welding position, which can make the heating temperature more uniform than using a Gaussian beam, effectively avoiding various defects or even failures caused by thermal stress concentration due to local high temperature.

[0036] 2. This invention utilizes pulsed laser for impact operation, which can apply downward pressure to achieve interconnection between bonding wires and bonding points without direct contact with bonding wires, chips, and bonding points on the packaging substrate, reducing the phenomenon of loose connections and achieving clean and pollution-free welding.

[0037] 3. This invention utilizes online monitoring equipment to monitor the dynamic welding behavior of bonding wires in real time, optimize welding process parameters in real time, and thus achieve closed-loop feedback of the bonding wire welding process. Attached Figure Description

[0038] The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and form part of this application, do not constitute a limitation thereof. In the drawings:

[0039] Figure 1 This is a schematic diagram of the spraying of the absorption layer in an embodiment of the present invention;

[0040] Figure 2 This is a schematic diagram of the removal of the oxide layer in an embodiment of the present invention;

[0041] Figure 3 This is a close-up schematic diagram of the bonding line and bonding point in an embodiment of the present invention;

[0042] Figure 4 This is a schematic diagram of dual-laser welding in an embodiment of the present invention.

[0043] The attached diagram shows the markings and corresponding component names:

[0044] 1. Beam shaping element; 2. Absorption layer; 3. Light shield; 4. First laser beam; 5. Second laser beam; 6. Bonding point; 7. Bonding line; 8. Spectrometer; 9. High-speed camera; 10. Pressure sensor. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the embodiments and accompanying drawings. The illustrative embodiments and descriptions of the present invention are only used to explain the present invention and are not intended to limit the present invention.

[0046] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly or indirectly attached to that other component. When a component is referred to as being "connected to" another component, it can be directly or indirectly connected to that other component.

[0047] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.

[0048] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0049] Example 1: A dual-beam laser chip welding device, such as Figure 1 and Figure 2 As shown, it includes a laser, a beam shaping element 1, a bonding wire 7, and a control module. The surface of the bonding wire 7 is covered with an absorption layer 2.

[0050] Specifically, the laser is configured to emit a first laser beam 4 and a second laser beam 5, which have separate functions. The first laser beam 4 directly irradiates the absorption layer 2, generating a plasma shock wave that acts on the bonding wire 7, causing the bonding wire 7 to undergo plastic deformation and come into contact with the bonding point 6 of the chip or packaging substrate; the second laser beam 5 irradiates the bonding point 6 of the chip or packaging substrate, using the thermal effect of the laser to remove the oxide layer on the bonding point 6 and providing the heat required for welding.

[0051] Chip interconnect soldering differs from conventional additive component soldering. In additive component soldering, damage from impact pressure is typically less of a concern, and localized heat concentrations are generally more tolerable. However, chip soldering involves multiple interfaces, significant differences in the thermal expansion coefficients of the various layers within the chip, and layers that are only a few micrometers or even hundreds of nanometers thick. When heat is concentrated, excessive localized thermal stress can occur, ultimately leading to delamination of the internal chip materials and failure of the gate oxide layer, ultimately causing chip failure. Furthermore, semiconductor materials used in chip manufacturing, such as silicon and gallium nitride, have poor plasticity and are highly susceptible to fracture under plasma shock waves. Therefore, impact pressure must be carefully monitored during soldering.

[0052] Therefore, this invention is equipped with a beam shaping element 1. After being processed by the beam shaping element 1, the second laser beam 5 is converted from a Gaussian beam into a flat-top beam. The flat-top beam directly irradiates the bonding point 6 to provide welding heat. This invention uses a homogenized flat-top laser light to heat the welding position. Compared with using a Gaussian beam, this results in a more uniform heating temperature and can effectively avoid various defects or even failures caused by thermal stress concentration due to localized high temperatures in the welded chip.

[0053] In some optional examples, beam shaping element 1 is a microlens array or a refractive beam shaper.

[0054] In some alternative examples, the absorbing layer 2 is any one of graphite, black paint, or a light-absorbing metal film, and is applied to the surface of the bonding wire 7 by spraying.

[0055] In some optional examples, the first laser beam 4 is a pulsed laser with a pulse width of less than 300 ns, and the second laser beam 5 is a continuous laser or a pulsed laser.

[0056] In some alternative examples, the two laser beams can be generated by two separate lasers or by a single laser. The method of generating two laser beams using a single laser is to split the single laser beam into two beams using optical path management elements such as beam expanders, beam splitters, reflectors, or focusing lenses.

[0057] This invention utilizes laser heating to achieve localized heating of the bonding points, avoiding damage to the chip or packaging substrate bonding points 6 caused by high-frequency vibrations. Furthermore, when a nanosecond or picosecond laser is used, heat conduction into the chip's interior is prevented. The pressure connecting the bonding wire 7 to the chip or packaging substrate bonding point 6 originates from a plasma shock wave generated by pulsed laser irradiation of the absorption layer 2 on the bonding wire 7; the energy of this shock wave can be precisely controlled by the pulsed laser energy. In addition, the homogenization of the welding temperature is achieved by using a homogenized flat-top laser beam to heat the welding position, resulting in a more uniform heating temperature compared to using a Gaussian beam. This effectively avoids various defects or even failures caused by thermal stress concentration due to localized high temperatures in the welded chip.

[0058] The control module in this invention mainly adjusts the laser parameters of the laser based on the received feedback signal; wherein, the feedback signal is generated based on the status information of the welding process in real time, including but not limited to temperature, pressure and molten pool morphology.

[0059] For example, the device can also be configured with an online monitoring system, which includes a spectrometer 8, a pressure sensor 10, and a high-speed camera 9, for real-time acquisition of temperature, pressure, and molten pool morphology information corresponding to the feedback signals.

[0060] Specifically, the spectrometer 8 is used to monitor the intensity of scattered light during chip welding, thereby enabling monitoring of the welding temperature; the high-sensitivity pressure sensor 10 is placed under the sealing substrate to monitor the magnitude of the impact pressure during chip welding; and the high-speed camera 9 is used to monitor the morphology of the molten pool during chip welding.

[0061] In some optional examples, the intensity of the scattered light monitored by the spectrometer 8 is divided into three levels: Level I (intensity too low, temperature below the melting point of the bonding line 7), Level II (intensity suitable, temperature within the melting point range of the bonding line 7), and Level III (intensity too high, temperature above the melting point of the bonding line 7 and will cause chip failure). The correlation between intensity and temperature can be corrected through pre-testing.

[0062] In some optional examples, the pressure monitored by the high-sensitivity pressure sensor 10 is divided into three levels: Level A (pressure too low, bonding wire 7 does not contact the solder joint), Level B (pressure suitable, bonding wire 7 contacts the solder joint), and Level C (pressure too high, causing cracks in the chip to be soldered).

[0063] In some optional examples, the high-speed camera 9 can transmit images of the molten pool morphology to a computer for subsequent analysis to determine if voids have been generated at the weld location.

[0064] The control module is specifically configured to execute the following control logic:

[0065] (1) When the intensity of the scattered light monitored by the spectrometer 8 is level I and the pressure monitored by the pressure sensor 10 is level A, control the increase of the output power of the first laser beam 4 and the second laser beam 5, or control the increase of the output power of the first laser beam 4 while reducing the pulse width of the second laser beam 5.

[0066] (2) When the intensity of the scattered light is level I and the pressure is level B, control the increase of the output power of the first laser beam 4;

[0067] (3) When the intensity of the scattered light is level I and the pressure is level C, control the increase of the output power of the first laser beam 4, and at the same time control the decrease of the output power of the second laser beam 5 or increase its pulse width;

[0068] (4) When the intensity of the scattered light is level II and the pressure is level A, control the output power of the second laser beam 5 to increase or decrease its pulse width;

[0069] (5) When the intensity of the scattered light is level II and the pressure is level C, control the output power of the second laser beam 5 to decrease or increase its pulse width;

[0070] Among them, the intensity of scattered light is: Level I < Level II, and the pressure is: Level A < Level B < Level C.

[0071] This invention utilizes online monitoring equipment to monitor the dynamic welding behavior of the bonding wire 7 in real time, optimize welding process parameters in real time, and thus achieve closed-loop feedback of the bonding wire 7 welding process.

[0072] Example 2: A dual-beam laser chip welding method, which implements a dual-beam laser chip welding apparatus as described in Example 1, includes the following steps:

[0073] S1: An absorbent layer 2 is formed by spraying onto the surface of the bonding line 7, such as... Figure 1 As shown;

[0074] S2: Place the chip on the packaging substrate and irradiate the bonding points 6 on the chip and / or the packaging substrate with the second laser beam 5 to remove the oxide layer on the surface of the bonding points 6, such as... Figure 2 As shown;

[0075] Specifically, a pressure sensor 10 is placed at the bottom of the packaging substrate, and the chip to be soldered is placed on top of the packaging substrate; the laser is turned on and two laser beams are emitted. The first laser beam 4 is first blocked by the light shield 3, and the second laser beam 5 is used to directly irradiate the bonding point 6 of the chip or packaging substrate to remove the oxide layer on the surface of the bonding point 6.

[0076] S3: Using a special tool, move the bonding line 7, which is coated with the pre-placed absorbent layer 2, above and close to the bonding point 6, such as... Figure 3 As shown;

[0077] S4: Remove the light-shielding plate 3 that is blocking the first laser beam 4, and irradiate the absorption layer 2 with the first laser beam 4 to excite a plasma shock wave, causing the bonding wire 7 to undergo plastic deformation and press against the bonding point 6; simultaneously, irradiate the bonding point 6 with a second laser beam 5, which has been converted into a flat-top beam by the beam shaping element 1, to provide the heat required for welding, such as... Figure 4 As shown;

[0078] S5: During the welding process, the control module dynamically adjusts the laser parameters of the first laser beam 4 and / or the second laser beam 5 according to the received feedback signal, wherein the feedback signal is generated based on real-time monitoring of temperature, pressure and / or molten pool morphology during the welding process.

[0079] In some optional examples, the present invention may also include a laser energy attenuation device or a beam splitter to distribute the energy of the two laser beams, thereby achieving control of the laser beam intensity.

[0080] In some optional examples, the centers of the first laser beam 4 and the second laser beam 5 coincide to achieve a significant thermal coupling effect in the beam interaction region.

[0081] In some optional examples, the energy distribution non-uniformity of the flat-top spot of the second laser beam 5 is less than 5%.

[0082] Example 3: A chip packaging structure in which the chip and the packaging substrate or bonding wire 7 are interconnected using a dual-beam laser chip welding method as described in Example 1.

[0083] Working principle: Compared with the heating methods of metal interconnect technologies such as ultrasonic bonding, thermo-ultrasonic bonding and thermo-press bonding, laser heating can achieve local heating of the welding point, avoiding damage to the bonding point 6 of the chip or packaging substrate caused by high-frequency vibration; at the same time, if the laser used is a nanosecond or picosecond laser, due to the short heating time and concentrated heat, it can avoid heat conduction into the chip.

[0084] Furthermore, this invention uses a uniform flat-top laser beam to heat the welding position, which makes the heating temperature more uniform compared to using a Gaussian beam. This effectively avoids various defects or even failures caused by thermal stress concentration due to local high temperatures in the welded chip. By using pulsed laser for impact operation, downward pressure can be applied without direct contact with the bonding wire 7, chip, and packaging substrate bonding point 6 to achieve interconnection between the bonding wire 7 and the bonding point 6, reducing the phenomenon of loose connections and achieving clean and pollution-free welding.

[0085] In addition, the present invention can monitor the dynamic welding behavior of the bonding wire 7 in real time by means of online monitoring equipment, optimize the welding process parameters in real time, and thus realize closed-loop feedback of the bonding wire 7 welding process.

[0086] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0087] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0088] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0089] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0090] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A dual beam laser die bonding apparatus, characterized by, It includes a laser, a beam shaping element (1), a bonding wire (7), and a control module, wherein the surface of the bonding wire (7) is covered with an absorption layer (2); The laser is configured to emit a first laser beam (4) and a second laser beam (5) with discrete functions, wherein: The first laser beam (4) acts on the absorption layer (2) to generate a plasma shock wave, causing the bonding wire (7) to undergo plastic deformation and come into contact with the bonding point (6) of the chip and / or the packaging substrate. The second laser beam (5) is processed by the beam shaping element (1) to convert the Gaussian beam into a flat-top beam. The flat-top beam directly irradiates the bonding point (6) to provide welding heat; The control module is configured to adjust the laser parameters of the laser based on the received feedback signal; wherein the feedback signal is generated based on real-time monitoring of temperature, pressure and / or molten pool morphology during the welding process.

2. The dual-beam laser chip welding apparatus according to claim 1, characterized in that, The beam shaping element (1) is a microlens array or a refractive beam shaper.

3. The dual-beam laser chip welding apparatus according to claim 1, characterized in that, The absorption layer (2) is any one of graphite, black paint or light-absorbing metal film, and is applied to the surface of the bonding line (7) by spraying.

4. The dual-beam laser chip welding apparatus according to claim 1, characterized in that, The first laser beam (4) is a pulsed laser with a pulse width of less than 300 ns, and the second laser beam (5) is a continuous laser or a pulsed laser.

5. The dual beam laser chip welding apparatus of claim 1, wherein, The device also includes an online monitoring system, which includes at least one of a spectrometer (8), a pressure sensor (10), and a high-speed camera (9), for real-time acquisition of temperature, pressure, and molten pool morphology information corresponding to the feedback signal.

6. The dual-beam laser chip welding apparatus according to claim 5, characterized in that, The control module is specifically configured to execute the following control logic: When the intensity of scattered light monitored by the spectrometer (8) is level I and the pressure monitored by the pressure sensor (10) is level A, the output power of the first laser beam (4) and the second laser beam (5) is increased, or the output power of the first laser beam (4) is increased while the pulse width of the second laser beam (5) is decreased. When the intensity of the scattered light is level I and the pressure is level B, the output power of the first laser beam (4) is increased. When the intensity of the scattered light is level I and the pressure is level C, the output power of the first laser beam (4) is increased, while the output power of the second laser beam (5) is decreased or its pulse width is increased. When the intensity of the scattered light is level II and the pressure is level A, control the output power of the second laser beam (5) to increase or decrease its pulse width; When the intensity of the scattered light is level II and the pressure is level C, control the output power of the second laser beam (5) to decrease or increase its pulse width; Among them, the intensity of scattered light is: Level I < Level II, and the pressure is: Level A < Level B < Level C.

7. A dual beam laser die bonding method, characterized by, Includes the following steps: S1: An absorption layer (2) is formed on the surface of the bonding line (7); S2: Place the chip on the packaging substrate and irradiate the bonding points (6) on the chip and / or the packaging substrate with a second laser beam (5) to remove the oxide layer on the surface of the bonding points (6); S3: Move the bonding line (7) above and close to the bonding point (6); S4: The first laser beam (4) is used to irradiate the absorption layer (2) to excite plasma shock waves, so that the bonding wire (7) undergoes plastic deformation and is pressed together with the bonding point (6); at the same time, the second laser beam (5) converted into a flat-top beam by the beam shaping element (1) is used to irradiate the bonding point (6) to provide the heat required for welding. S5: During the welding process, the control module dynamically adjusts the laser parameters of the first laser beam (4) and / or the second laser beam (5) according to the received feedback signal, wherein the feedback signal is generated based on real-time monitoring of temperature, pressure and / or molten pool morphology during the welding process.

8. The dual-beam laser chip welding method according to claim 7, characterized in that, The center of the spot of the first laser beam (4) coincides with that of the second laser beam (5).

9. The dual beam laser chip welding method of claim 7, wherein, The energy distribution non-uniformity of the flat-top light spot of the second laser beam (5) is less than 5%.

10. A chip package structure, comprising: The chip in the chip packaging structure is interconnected with the packaging substrate or bonding wire (7) using a dual-beam laser chip welding method as described in any one of claims 7-9.

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