An ultrahigh voltage control circuit, a high voltage controller and a compressor

Abstract

This invention discloses an ultra-high voltage control circuit, a high voltage controller, and a compressor, including a low-voltage input module, a high-voltage input module, a compressor drive module, and a bus capacitor module. The compressor drive module is electrically connected to the low-voltage input module, the high-voltage input module, and the bus capacitor module. The low-voltage input module includes a low-voltage battery and an ECU controller. The high-voltage input module includes a high-voltage power supply and a pre-charging circuit. The compressor drive module includes an isolation converter, a communication module, a main control MCU, and a SiC drive unit, etc. The SiC drive unit drives a three-phase half-bridge circuit. The bus capacitor module is electrically connected to the high-voltage input module and the three-phase half-bridge circuit of the SiC drive unit. It adopts a parallel structure of thin-film capacitors. The topology of the SiC drive unit is a half-bridge circuit, a high-side isolated drive, and a low-side intelligent drive. Bootstrap power supply realizes high-side floating ground power supply. The circuit structure is simple, the layout is reasonable, the circuit complexity is reduced, and the layout space is saved.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and in particular to an ultra-high voltage control circuit, a high voltage controller, and a compressor. Background Technology

[0002] The description in this section provides only background information related to the disclosure of this invention and does not constitute prior art.

[0003] As new energy power electronic equipment develops towards higher voltage, higher power, and higher efficiency, equipment such as electric compressors on 800V and above ultra-high voltage platforms place higher demands on the performance, reliability, and heat dissipation of control circuits. Traditional IGBT controllers suffer from problems such as low switching frequency, low efficiency, high losses, and high temperature rise. Furthermore, existing silicon carbide (SiC) controllers have shortcomings such as susceptibility to drive signal interference, poor ripple suppression, slow short-circuit protection response, and insufficient high-voltage isolation reliability, which cannot meet the stable operation requirements of ultra-high voltage platform equipment.

[0004] To address the aforementioned problems, the development of a silicon carbide (SiC) ultra-high voltage control circuit that is adaptable to ultra-high voltage platforms, highly efficient, low-loss, possesses strong anti-interference capabilities, and has a robust protection mechanism has become an urgent need in the industry. It should be noted that the above description of the technical background is merely for the purpose of clearly and completely explaining the technical solutions of this invention and facilitating understanding by those skilled in the art. The fact that these solutions have been described in the background section of this invention should not be construed as meaning that the above technical solutions are known to those skilled in the art. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide an ultra-high voltage control circuit, a high voltage controller and a compressor, in order to address the shortcomings of the prior art.

[0006] This application discloses an ultra-high voltage control circuit, including: The system includes a low-voltage input module, a high-voltage input module, a compressor drive module, and a bus capacitor module, wherein the compressor drive module is electrically connected to the low-voltage input module, the high-voltage input module, and the bus capacitor module. The low-voltage input module includes a low-voltage battery and an ECU controller; The high-voltage input module includes a high-voltage power supply and a pre-charging circuit; The compressor drive module includes a DC-DC isolation converter, a CANFD communication module, a main control MCU, a SiC drive unit, a current detection unit, a voltage detection unit, a high-voltage filter unit, and a temperature detection unit. The SiC drive unit drives the three-phase half-bridge circuit. The bus capacitor module is electrically connected to the three-phase half-bridge circuit of the high-voltage input module and the SiC drive unit, and adopts a parallel structure of thin-film capacitors.

[0007] Furthermore, in the aforementioned ultra-high voltage control circuit, the SiC drive unit includes: A half-bridge circuit consists of a high-side SiC MOSFET and a low-side SiC MOSFET, forming a half-bridge topology, where the midpoint of the half-bridge is the switching node. A high-side isolation drive circuit is used to drive the high-side SiC MOSFET, including a high-side drive chip, a bootstrap power supply circuit, and an input anti-interference shaping circuit; A low-side intelligent driving circuit for driving the low-side SiC MOSFET includes a low-side driving chip, a desaturation short-circuit protection circuit, and an input anti-interference circuit. A current sampling circuit is used to detect phase current, including a sampling resistor; A driving power supply is used to provide power to the high-side isolation driving circuit and the low-side intelligent driving circuit.

[0008] Furthermore, in the aforementioned ultra-high voltage control circuit, the input side of the high-side drive chip is provided with an input anti-interference shaping circuit, the high-side drive chip cooperates with the bootstrap power supply circuit, and the high-side drive chip has a built-in negative voltage generation circuit to achieve -3V negative voltage shutdown.

[0009] Furthermore, in the aforementioned ultra-high voltage control circuit, the input side of the low-side drive chip is equipped with an input anti-interference circuit, and the low-side drive chip has a built-in negative voltage adjustment circuit to achieve -3.5V negative voltage shutdown.

[0010] Furthermore, in the aforementioned ultra-high voltage control circuit, the SiC drive unit is equipped with a fault linkage logic circuit, including the FO pin of the high-side drive chip and the FAULT pin of the low-side drive chip. The FO pin is used for power-on timing interlocking, and the FAULT pin is an automatic recovery fault signal that is pulled low when the UVLO undervoltage or desaturation short-circuit protection circuit is triggered.

[0011] Furthermore, in the aforementioned ultra-high voltage control circuit, both the high-side SiC MOSFET and the low-side SiC MOSFET are selected from Rohm SCT4036KRHR, which are packaged in a TO-247-4L four-pin package. The maximum operating voltage of the Rohm SCT4036KRHR is 1200V, and the maximum average operating current at 100℃ is 30A.

[0012] Furthermore, in the aforementioned ultra-high voltage control circuit, both the high-side SiC MOSFET and the low-side SiC MOSFET are provided with an on / off resistor separation circuit and a Gate-Source damping RC circuit around their gates. The on / off resistor separation circuit has an equivalent gate resistance of 20Ω when on and 30Ω when off. The Gate-Source damping RC circuit consists of a 10nF capacitor connected in series with a 3.3Ω resistor between the gate and the Kelvin Source pin.

[0013] Furthermore, in the aforementioned ultra-high voltage control circuit, the bus capacitor module includes two 6μF / 1100V film capacitors and one 2.8μF / 1100V film capacitor, with a total capacitance of 14.8μF and an effective ripple current withstand value of 62.2A. The capacitance of the bus capacitor is calculated according to the formula C=Pmax / (4f UΔU), where Pmax=14000W, U=650V, ΔU=20V, and f=20kHz.

[0014] This application also discloses a high-voltage controller that uses the above-described ultra-high-voltage control circuit.

[0015] This application also discloses a compressor that employs the aforementioned ultra-high pressure control circuit.

[0016] In summary, the structure adopted in the embodiments of the present invention has the following advantages: The ultra-high voltage control circuit, high voltage controller, and compressor described in this invention use ROHM SCT4036KRHR SiCMOSFET to replace traditional IGBTs, increasing the switching frequency to 20kHz, achieving a peak efficiency of 99.4%, significantly reducing total losses, with a temperature rise of only 8~9℃, and increasing COP by 5%-8%, thus meeting the high power requirements of ultra-high voltage platforms. The SiC MOSFET uses a four-pin Kelvin Source package, separating the gate from the power circuit to reduce Vgs jitter; the gate is equipped with an anti-interference shaping circuit and a damping RC circuit, and the turn-on / turn-off resistor design suppresses ringing; the high-side drive chip has excellent CMTI performance, avoiding false turn-on under high dv / dt conditions. Both the high-side and low-side driver chips have built-in negative voltage circuits to achieve -3V and -3.5V negative voltage turn-off, respectively, which significantly improves the anti-Miller mis-turn-on capability of SiC MOSFETs under high dv / dt. The low-side driver chip integrates DESAT desaturation short-circuit protection with nanosecond-level response (external blanking time 646ns), and with fault linkage logic, it realizes rapid fault detection and feedback. The bus capacitor uses multiple high-voltage film capacitors connected in parallel, with a total capacitance of 14.8μF, leaving a margin. It can withstand an effective value of 62.2A of ripple current, stabilize the DC bus voltage, and suppress ripple interference. The topology of half-bridge circuit, high-side isolated driver, and low-side intelligent driver, with bootstrap power supply to achieve high-side floating ground power supply, has a simple circuit structure and reasonable layout. Compared with similar solutions, it reduces the use of isolation chips, reduces circuit complexity, and saves layout space.

[0017] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments or prior art of this specification, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is an overall system block diagram of the ultra-high voltage control circuit in an embodiment of the present invention; Figure 2 This is a circuit diagram of the SiC drive unit of the ultra-high voltage control circuit in an embodiment of the present invention; Figure 3 This is a schematic diagram of the UCC5350 driving circuit in an embodiment of the present invention. Detailed Implementation

[0020] To enable those skilled in the art to better understand the technical solutions in this specification, the technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this specification.

[0021] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. Furthermore, the accompanying drawings of the present invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of protection of the present invention.

[0022] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the related listed items.

[0023] Reference Figures 1 to 3 As shown in the figure, this application discloses an ultra-high voltage control circuit, including: The system includes a low-voltage input module, a high-voltage input module, a compressor drive module, and a bus capacitor module, wherein the compressor drive module is electrically connected to the low-voltage input module, the high-voltage input module, and the bus capacitor module. The low-voltage input module includes a low-voltage battery and an ECU controller; The high-voltage input module includes a high-voltage power supply and a pre-charging circuit; The compressor drive module includes a DC-DC isolation converter, a CANFD communication module, a main control MCU, a SiC drive unit, a current detection unit, a voltage detection unit, a high-voltage filter unit, and a temperature detection unit. The SiC drive unit drives the three-phase half-bridge circuit. The bus capacitor module is electrically connected to the three-phase half-bridge circuit of the high-voltage input module and the SiC drive unit, and adopts a parallel structure of thin-film capacitors.

[0024] The DC-DC isolation converter is electrically connected to the low-voltage input module to achieve high-low voltage isolation power supply. The CANFD communication module realizes data interaction. The main control MCU is the control core. The SiC drive unit drives the three-phase half-bridge circuit. The current, voltage and temperature detection units realize the real-time detection of phase current, bus voltage and device temperature respectively. The high-voltage filter unit filters the high-voltage input. The bus capacitor module is electrically connected to the three-phase half-bridge circuit of the high-voltage input module and the SiC drive unit to stabilize the DC bus voltage and suppress ripple.

[0025] Specifically, in this embodiment, the SiC driving unit includes: The half-bridge circuit consists of a high-side SiC MOSFET Q201 and a low-side SiC MOSFET Q202, forming a half-bridge topology, where the midpoint of the half-bridge is the switching node. A high-side isolation drive circuit is used to drive the high-side SiC MOSFET Q201, including a high-side drive chip U201, a bootstrap power supply circuit, and an input anti-interference shaping circuit; A low-side intelligent driving circuit is used to drive the low-side SiC MOSFET Q202, including a low-side driving chip, a desaturation short-circuit protection circuit, and an input anti-interference circuit. A current sampling circuit is used to detect phase current, including a sampling resistor; A driving power supply is used to provide power to the high-side isolation driving circuit and the low-side intelligent driving circuit.

[0026] SiC MOSFET is a silicon carbide field-effect transistor. SiC MOSFETs use a four-pin package, separating the gate from the power circuit to reduce Vgs jitter. The circuit consists of a high-side SiC MOSFET Q201, a low-side SiC MOSFET Q202, a high-side driver chip U201, and a low-side driver chip U202. The high-side SiC MOSFET Q201 and low-side SiC MOSFET Q202 form a half-bridge, with the midpoint of the half-bridge being the switching node U0 and the positive terminal of the DC bus being P+. The high-side driver chip U201 is a Zhanxin IVCO1412 isolated single-channel driver chip with an isolation withstand voltage of 5.7kVrms and a CMTI ≥ 100V / ns. It has a built-in negative voltage generation circuit and, together with a bootstrap power supply circuit, achieves floating ground power supply. The low-side driver chip U202 is a Zhanxin IVCR1402Q non-isolated low-side intelligent driver chip, integrating negative voltage generation, DESAT desaturation short-circuit protection, and / FAULT fault output functions.

[0027] Specifically, in this embodiment, the input side of the high-side driver chip is provided with an input anti-interference shaping circuit, the high-side driver chip works in conjunction with the bootstrap power supply circuit, and the high-side driver chip has a built-in negative voltage generation circuit to achieve -3V negative voltage shutdown.

[0028] The bootstrap power supply circuit includes a +21V_DRV drive power supply, a resistor R204, diodes D201 and D202, and a bootstrap capacitor C205. The +21V_DRV charges the bootstrap capacitor C205 through the resistor R204, diodes D201 and D202. The bootstrap capacitor C205 is connected across VCC2 and VEE2 of the high-side driver chip U201. When the low-side SiC MOSFET Q202 is turned on, the switching node U0 is pulled low, diodes D201 and D202 are forward biased, and the bootstrap capacitor C205 is charged to 21V_DRV minus the diode voltage drop. When the high-side SiC MOSFET Q201 is turned on, the switching node U0 rises to a high potential, diodes D201 and D202 are reverse biased, and the bootstrap capacitor C205 provides a floating ground power supply for the high-side driver chip U201. The input side of the high-side driver chip U201 is equipped with a PWM_UH input anti-interference shaping circuit, including a series resistor R206, a pull-down resistor R209, and a grounded capacitor C208, to suppress glitch triggering under high dv / dt conditions; the output side of the high-side driver chip U201 is connected to an external negative voltage capacitor to achieve -3V negative voltage shutdown, and its gate drive signal is output from the NEG pin, Vgs_on≈+18V, Vgs_off≈-3V.

[0029] Specifically, in this embodiment, the input side of the low-side driver chip is provided with an input anti-interference circuit, and the low-side driver chip has a built-in negative voltage regulation circuit to achieve -3.5V negative voltage shutdown.

[0030] The input side of the low-side driver chip U202 is equipped with a PWM_UL input anti-interference circuit, including a series resistor R212, a filter pull-down capacitor C224, and a resistor R217. The low-side driver chip U202 has a built-in negative voltage regulation circuit to achieve -3.5V negative voltage shutdown. The gate drive signal is output from the NEG pin, Vgs_on≈+17.5V, Vgs_off≈-3.5V. The DESAT desaturation short-circuit protection circuit of the low-side driver chip U202 includes a resistor R210, a series diode D204 and a diode D205, and a filter capacitor C216. The DESAT pin is connected to the switching node U0 through the resistor R210, diode D204, and diode D205. The filter capacitor C216 is connected between the DESAT pin and ground. When a short circuit / overcurrent causes SiC When the MOSFET exits saturation and Vds rises, the DESAT pin is charged to the 9.5V threshold via an internal 1mA constant current source, triggering short-circuit protection. This pulls down the OUT and / FAULT pins, with a 200ns internal blanking time on the rising edge of OUT. The external blanking time is implemented by the filter capacitor C216, roughly calculated to be 646ns. The low-side driver chip integrates DESAT desaturation short-circuit protection with nanosecond-level response (646ns external blanking time), and, combined with fault linkage logic, enables rapid fault detection and feedback.

[0031] Specifically, in this embodiment, the SiC driving unit is equipped with a fault linkage logic circuit, including the FO pin of the high-side driving chip U201 and the FAULT pin of the low-side driving chip U202. The FO pin is used for power-on timing interlock, and the FAULT pin is an automatic recovery fault signal that is pulled low when UVLO (undervoltage lockout) or DEAST (desaturation short-circuit protection) is triggered. The FO pin remains low when the negative voltage capacitor is not established and is released after the negative voltage is established, serving as a power-on timing interlock. The FAULT pin is pulled low when UVLO or DEAST short-circuit protection is triggered and remains low for about 10μs after the fault is cleared, serving as an automatic recovery fault signal that feeds back fault information to the main control MCU.

[0032] Specifically, in this embodiment, both the high-side SiC MOSFET and the low-side SiC MOSFET are selected from Rohm SCT4036KRHR, which adopts a TO-247-4L four-pin package. The maximum operating voltage of the Rohm SCT4036KRHR is 1200V, and the maximum average operating current at 100℃ is 30A. The high-side SiC MOSFET (Q201) and low-side SiC MOSFET (Q202) use ROHM's SCT4036KRHR, with a maximum operating voltage of 1200V, a maximum average operating current of 30A at 100℃, a maximum operating junction temperature of 175℃, a drive voltage range of -4V to 21V, a drain-source on-resistance of 36mΩ, and a TO-247-4L four-pin package. The KelvinSource pin is provided to separate the gate circuit from the power current circuit, reducing Vgs jitter caused by the common source inductance. The source of Q201 and the drain of Q202 are connected to form the midpoint (U0) of the half-bridge, which serves as the switching node.

[0033] Specifically, in this embodiment, both the high-side SiC MOSFET and the low-side SiC MOSFET are provided with an on / off resistor separation circuit and a Gate-Source damping RC circuit around their gates. The on / off resistor separation circuit has an equivalent gate resistance of 20Ω when on and 30Ω when off. The Gate-Source damping RC circuit consists of a 10nF capacitor connected in series with a 3.3Ω resistor between the gate and the Kelvin Source pin.

[0034] Both the high-side SiC MOSFET Q201 and the low-side SiC MOSFET Q202 have a turn-on / turn-off resistor separation circuit and a Gate-Source damping RC circuit around their gates. The turn-on / turn-off resistor separation circuit includes a main path resistor, a diode and a resistor in parallel branch. The diode conducts in one direction to achieve unidirectional adjustment of the equivalent gate resistance. The equivalent gate resistance is about 20Ω when turned on and about 30Ω when turned off, suppressing voltage spikes / ringing when the SiC is turned off. The Gate-Source damping RC circuit consists of a 10nF capacitor connected in series with a 3.3Ω resistor between the gate and the Kelvin Source pin, suppressing high-frequency ringing in the gate circuit and improving the anti-misleading turn-on capability.

[0035] Specifically, in this embodiment, the bus capacitor module includes two 6μF / 1100V film capacitors and one 2.8μF / 1100V film capacitor, with a total capacitance of 14.8μF and an effective ripple current withstand capability of 62.2A. The capacitance of the bus capacitor is calculated according to the formula C=Pmax / (4f UΔU), where Pmax=14000W, U=650V, ΔU=20V, and f=20kHz. The bus capacitor uses multiple high-voltage film capacitors connected in parallel, with a total capacitance of 14.8μF, providing a margin. The effective ripple current withstand capability of 62.2A stabilizes the DC bus voltage, and the parallel connection of three capacitors provides better ripple suppression.

[0036] The compressor drive module uses a Texas Instruments TMS320SF280A5 MCU as its main controller. The driver chips include a Texas Instruments UCC5350 isolated gate driver, a Texas Instruments TCAN1043 communication chip, and a Nanochip NSI822X isolation chip. The UCC5350 features a minimum peak pull-up current of 5A and a minimum peak sink current of 5A, specifically designed for SiC MOSFETs. The UCC5350-Q1 incorporates Miller clamping functionality. The CLAMP pin, in addition to connecting the transistor gate to the output, is also used to connect the gate to the internal FET to prevent false turn-on caused by Miller current. With the separate output option, the rise and fall times of the gate voltage can be controlled independently using the OTH and OUTL pins. The addition of Miller clamping capability to the driver chip makes it suitable for SiC-MOSFET applications and offers higher reliability than typical automotive-grade driver chips. Furthermore, the ultra-high voltage control circuit has a switching frequency of 20kHz and a peak efficiency of 99.4%. Under test conditions of 800V voltage, 3000RPM speed, and 2.5MPa exhaust pressure, the drive waveform is smooth and interference-free, the phase current exhibits a standard sine wave, excellent ripple suppression, and fast short-circuit protection response, making it stable for use in ultra-high voltage vehicle-mounted electric compressors. Compared to traditional IGBT controllers, the COP is increased by 5%-8%, and the controller temperature rise is only 8-9℃. The total loss of the SiC MOSFET is 19.17W, far lower than the 89.62W of traditional IGBTs, including a conduction loss of 6.78W and a switching loss of 12.3W.

[0037] This embodiment also discloses a high-voltage controller, which adopts the above-described ultra-high-voltage control circuit.

[0038] This embodiment also discloses a compressor that uses the above-described ultra-high pressure control circuit.

[0039] The ultra-high voltage control circuit provided in this embodiment has the following beneficial effects: By replacing the traditional IGBT with ROHM SCT4036KRHR SiC MOSFET, the switching frequency is increased to 20kHz, the peak efficiency is 99.4%, the total loss is significantly reduced, the temperature rise is only 8~9℃, and the COP is increased by 5%-8%, making it suitable for the high power requirements of ultra-high voltage platforms. The SiC MOSFET uses a four-pin Kelvin Source package, separating the gate from the power circuit to reduce Vgs jitter; the gate is equipped with an anti-interference shaping circuit and a damping RC circuit, and the turn-on / turn-off resistor design suppresses ringing; the high-side drive chip has excellent CMTI performance, avoiding false turn-on under high dv / dt conditions. Both the high-side and low-side driver chips have built-in negative voltage circuits to achieve -3V and -3.5V negative voltage turn-off, respectively, which significantly improves the anti-Miller mis-turn-on capability of SiC MOSFETs under high dv / dt. The low-side driver chip integrates DESAT desaturation short-circuit protection with nanosecond-level response (external blanking time 646ns), and with fault linkage logic, it realizes rapid fault detection and feedback. The bus capacitor uses multiple high-voltage film capacitors connected in parallel, with a total capacitance of 14.8μF, leaving a margin. It can withstand an effective value of 62.2A of ripple current, stabilize the DC bus voltage, and suppress ripple interference. The topology of half-bridge circuit, high-side isolated driver, and low-side intelligent driver, with bootstrap power supply to achieve high-side floating ground power supply, has a simple circuit structure and reasonable layout. Compared with similar solutions, it reduces the use of isolation chips, reduces circuit complexity, and saves layout space.

[0040] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention specification and drawings are included in the scope of the patent application of the present invention.

[0041] The various embodiments in this specification are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0042] Although this application has been described by way of examples, those skilled in the art will know that this application has many modifications and variations without departing from the spirit of this application, and it is intended that the appended embodiments include these modifications and variations without departing from this application.

Claims

1. An ultra-high voltage control circuit, characterized in that, Applications include ultra-high voltage electric compressors of 800V and above, including: The system includes a low-voltage input module, a high-voltage input module, a compressor drive module, and a bus capacitor module, wherein the compressor drive module is electrically connected to the low-voltage input module, the high-voltage input module, and the bus capacitor module. The low-voltage input module includes a low-voltage battery and an ECU controller; The high-voltage input module includes a high-voltage power supply and a pre-charging circuit; The compressor drive module includes a DC-DC isolation converter, a CANFD communication module, a main control MCU, a SiC drive unit, a current detection unit, a voltage detection unit, a high-voltage filter unit, and a temperature detection unit. The SiC drive unit drives the three-phase half-bridge circuit. The bus capacitor module is electrically connected to the three-phase half-bridge circuit of the high-voltage input module and the SiC drive unit, and adopts a parallel structure of thin-film capacitors.

2. The ultra-high voltage control circuit according to claim 1, characterized in that, The SiC driving unit includes: A half-bridge circuit consists of a high-side SiC MOSFET and a low-side SiC MOSFET, forming a half-bridge topology, where the midpoint of the half-bridge is the switching node. A high-side isolation drive circuit is used to drive the high-side SiC MOSFET, including a high-side drive chip, a bootstrap power supply circuit, and an input anti-interference shaping circuit; A low-side intelligent driving circuit is used to drive the low-side SiC MOSFET, including a low-side driving chip, a desaturation short-circuit protection circuit, and an input anti-interference circuit. A current sampling circuit is used to detect phase current, including a sampling resistor; A driving power supply is used to provide power to the high-side isolation driving circuit and the low-side intelligent driving circuit.

3. The ultra-high voltage control circuit according to claim 2, characterized in that, The high-side driver chip has an input anti-interference shaping circuit on its input side. The high-side driver chip works in conjunction with the bootstrap power supply circuit. The high-side driver chip has a built-in negative voltage generation circuit to achieve -3V negative voltage shutdown.

4. The ultra-high voltage control circuit according to claim 3, characterized in that, The low-side driver chip has an input anti-interference circuit on its input side and a built-in negative voltage regulation circuit to achieve -3.5V negative voltage shutdown.

5. The ultra-high voltage control circuit according to claim 4, characterized in that, The SiC driving unit is equipped with a fault linkage logic circuit, including the FO pin of the high-side driving chip and the FAULT pin of the low-side driving chip. The FO pin is used for power-on timing interlocking, and the FAULT pin is an automatic recovery fault signal that is pulled low when the UVLO undervoltage or desaturation short-circuit protection circuit is triggered.

6. The ultra-high voltage control circuit according to claim 2, characterized in that, Both the high-side SiC MOSFET and the low-side SiC MOSFET are ROHM SCT4036KRHR, which are packaged in a TO-247-4L four-pin package. The maximum operating voltage of the ROHM SCT4036KRHR is 1200V, and the maximum average operating current at 100℃ is 30A.

7. The ultra-high voltage control circuit according to claim 2, characterized in that, Both the high-side SiC MOSFET and the low-side SiC MOSFET have an on / off resistor separation circuit and a Gate-Source damping RC circuit around their gates. The on / off resistor separation circuit has an equivalent gate resistance of 20Ω when on and 30Ω when off. The Gate-Source damping RC circuit consists of a 10nF capacitor connected in series with a 3.3Ω resistor between the gate and the Kelvin Source pin.

8. The ultra-high voltage control circuit according to claim 1, characterized in that, The bus capacitor module includes two 6μF / 1100V film capacitors and one 2.8μF / 1100V film capacitor, with a total capacitance of 14.8μF and an effective ripple current withstand value of 62.2A. The capacitance of the bus capacitor is calculated according to the formula C=Pmax / (4f UΔU), where Pmax=14000W, U=650V, ΔU=20V, and f=20kHz.

9. A high-voltage controller, characterized in that, The high-voltage controller adopts the ultra-high-voltage control circuit according to any one of claims 1 to 8.

10. A compressor, characterized in that, The compressor employs the ultra-high pressure control circuit described in any one of claims 1 to 8.

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