Gallium nitride-based semiconductor laser with gradient thermal conductivity waveguide layer

By introducing a graded thermal conductivity waveguide layer into a gallium nitride-based semiconductor laser, the problems of heat flux concentration and high interface thermal resistance in traditional waveguide layers are solved, achieving high power, long lifespan, and high reliability of the laser, and improving beam quality and stability.

CN122292048APending Publication Date: 2026-06-26GEN SEMICONDUCTOR (ANHUI) CO LTD
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Patent Information

Application Number
CN202610408646.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-31
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

The uniform waveguide layer of traditional nitride semiconductor lasers leads to concentrated heat flow, high interfacial thermal resistance, and heat accumulation in the active region, resulting in increased threshold current, decreased output optical power and slope efficiency. Furthermore, thermal lensing and stress birefringence effects exist, affecting the stability and lifespan of the device.

Method used

A gradient thermal conductivity waveguide layer design is adopted. By introducing gradient thermal conductivity structures in the lower and upper waveguide layers, the spatial distribution of thermal conductivity and phonon velocity is optimized by fitting the In ion intensity, transverse phonon velocity and thermal conductivity distribution using the Stirling function and LineMod function. This reduces thermally induced lattice distortion and optical field mode distortion, and improves mechanical stability and optical field confinement.

Benefits of technology

This achieves temperature uniformity in the active region, reduces thermal stress and heat flux concentration, improves the laser's threshold current, slope efficiency, and high-temperature stability, extends its lifetime, reduces the temperature coefficient of heat transport, and enhances internal quantum efficiency and beam quality.

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Abstract

The invention provides a gallium nitride-based semiconductor laser with a gradient thermal conductivity waveguide layer. The fitting curve of In ion strength distribution or In atom concentration distribution, the fitting curve of transverse phonon rate distribution and the fitting curve of thermal conductivity distribution of the gradient thermal conductivity upper waveguide layer and the gradient thermal conductivity lower waveguide layer all meet a Stirling function or a LineMod function, and the transverse TA phonon rate gradient makes phonon scattering of the lower waveguide layer uniform. Thermally induced lattice distortion is reduced, and light field mode distortion and light field limiting factor improvement are avoided; the gradual change of the transverse phonon rate enables the temperature distribution of the upper waveguide layer to be uniform, thermal stress is changed from a centralized mode to a distributed mode, and phonon transport loss caused by interface scattering is reduced; the bottleneck effect of heat flow at the interface of the active area and the lower waveguide layer is avoided, the temperature coefficient of the threshold is further reduced, the transportation of the heat flow to the substrate is accelerated, and thermal runaway caused by increase of driving current after the threshold is exceeded is avoided.
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