Antireflection coating compositions, methods of making and use thereof

Abstract

The present invention discloses an anti-reflective coating composition, its preparation method and application, wherein the anti-reflective coating composition comprises a polymer having at least one structural unit represented by formula (1).

Description

Technical Field

[0001] This application relates to the field of semiconductor lithography, specifically to an anti-reflective coating composition for lithography, its preparation method, and its application. Background Technology

[0002] Photolithography is one of the most important processes in semiconductor device manufacturing. Specifically, the photolithography process uses the photosensitive properties of photoresist to transfer fine circuit patterns from a photomask to the photoresist and even the silicon wafer, preparing for subsequent etching and ion implantation.

[0003] However, with the increasing integration of semiconductor devices, in order to meet the high resolution requirements of increasingly smaller process dimensions, the active light used for exposure has also evolved from i-line (365 nm) to deep ultraviolet (248 nm and 193 nm). The trend of shorter wavelengths of active light has led to an increase in the impact of substrate diffuse reflection and standing waves, which seriously affects the uniformity, sharpness and resolution of the pattern.

[0004] To overcome the aforementioned problems, an effective method is to introduce an anti-reflective coating between the photoresist and the substrate to reduce or eliminate reflection from the substrate. There are two main types of anti-reflective coatings: inorganic coatings and organic coatings containing light-absorbing components and polymers. Inorganic anti-reflective coatings have the following disadvantages: they require specialized equipment, involve redundant manufacturing steps, and are difficult to remove and reprocess later. Organic anti-reflective coatings, similar to photoresists, can be spin-coated onto the substrate surface, effectively simplifying the process and reducing costs, and are therefore widely used and researched.

[0005] After spin coating, the organic antireflective coating composition requires further high-temperature baking to achieve cross-linking and curing. Generally, to achieve rapid and accurate transfer of the photoresist pattern to the antireflective coating, the antireflective coating needs a high etching rate and must not mix with the photoresist solvent. However, the generation of chemical "gas release" during the high-temperature baking process becomes a major problem. Typically, "gas release" mainly originates from small molecule compounds such as cross-linking agents. When large amounts of gas are released, the exhaust system may not always be fast enough, causing the released components to condense on the inner wall of the baking chamber. These condensates may detach and fall onto subsequent wafers, leading to cross-contamination. Summary of the Invention

[0006] To overcome at least one deficiency of the prior art, the present invention provides a novel antireflective coating composition that can be used in the manufacture of semiconductor devices, and provides a method for preparing the antireflective coating and a method for forming a photoresist pattern.

[0007] According to a first aspect of this disclosure, an antireflective coating composition is provided, the antireflective coating composition comprising a polymer having at least one structural unit represented by formula (1);

[0008] R1, R2, and R3 are each independently selected from hydrogen, substituted, or unsubstituted C atoms. 1-10 Alkyl, C 1-10 Heteroalkyl, wherein the substituted C 1-10 The alkyl group is a C substituted with at least one of O, N, S, P and a halogen. 1-10 Alkyl, C 1-10 The heteroatom in a heteroalkyl group includes at least one of N, O, and S; Q includes the structures shown in equation (2) and / or equation (3):

[0009] In formulas (2) and (3), Q1 is selected from the following groups, either substituted or unsubstituted: C 1-11 Alkylene, C 2-4 imidene group, C 5-7 Cycloalkylene, C 6-10 Alpha-aryl, C 3-5 Hybrid aryl, C 1-10 Heteroalkylene and C 3-5 Heterocyclic alkyl groups, wherein C 3-5 Hybrid aryl, C 1-10 Heteroalkylene, C 3-5 The heterocyclic alkyl group includes 1-3 heteroatoms selected from N, O, and S. The substitution refers to the oxidation (=O) or carbon atom (=C) of the carbon atom or hydrogen atom on the heteroatom in the aforementioned group. 1-4 Alkyl, C 1-4 Hydroxyalkyl, C 2-4 Alkenes are replaced; A1 includes the divalent organic groups shown in formula (4), formula (5), formula (6) or formula (7): (4) (5) (6) (7), Among them, R9, R 10 and R 11 Each of the following groups, individually selected from substituted or unsubstituted groups: hydrogen, -C(O)-OR 12 C 1-10 Alkyl, C 2-3 alkenyl, C 6-15 Aryl, C 1-6 Heteroalkyl or 5-6 membered heterocyclic alkyl, or R9, R 10The atoms attached to it together form substituted or unsubstituted groups of the following: C 6-10 aryl, 5-6 membered heteroaryl, 5-6 membered cycloalkyl, 5-6 membered heterocycloalkyl, wherein R 12 Selected from C 1-10 Alkyl, wherein the substitution refers to the substitution of hydrogen atoms on the carbon atom or heteroatom of the above-mentioned group with one or more hydroxyl groups, C 1-4 Hydroxyalkyl, C 1-4 Alkoxy groups are substituted, wherein the heteroatoms in the above groups include at least one of N, O, and S; Indicates the location where it connects to the ring structure.

[0010] According to some implementations, Q1 in formula (2) is selected from one of the following groups: -(CH2)n-, -(CH2)2-SS-(CH2)2-, -(CH2)-SS-(CH2)-, -(CH2)-S-(CH2)-, , , , ,-CH=CH-,-(CH2)-O-(CH2)-, , , -(CH2)2-S(=O)-(CH2)2-, where n is any integer selected from 1 to 11, for example n=1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11.

[0011] According to some embodiments, A1 in formula (3) is selected from one of the following groups:

[0013] According to some embodiments, the weight-average molecular weight of the polymer is 1000-20000 g / mol; The polymer has a PDI of 1.3-3.0.

[0014] According to some embodiments, the weight-average molecular weight of the polymer is 2000-10000 g / mol; The polymer has a PDI of 1.6-2.5.

[0015] According to some embodiments, the antireflective coating composition comprises 0.5-5.5 wt% of a polymer, based on the total weight of the antireflective coating composition.

[0016] According to some embodiments, the antireflective coating composition comprises 0.8-3.5 wt% of a polymer, based on the total weight of the antireflective coating composition.

[0017] According to some embodiments, the antireflective coating composition further includes one or more of a thermal acid generator, a crosslinking agent, a photoacid generator, a surfactant, and a solvent.

[0018] According to some embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition further comprises 0-15 wt% of a hot acid generator; and / or The antireflective coating composition further comprises 0-20 wt% of a crosslinking agent; and / or The antireflective coating composition further comprises 0-15 wt% of a photoacid generator; and / or The antireflective coating composition further comprises 0-20 wt% of a surfactant; and / or The antireflective coating composition further comprises 90-99 wt% solvent.

[0019] According to some embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition comprises 0.001-10 wt% of a hot acid generator; and / or The antireflective coating composition comprises 0-10 wt% of a photoacid generator; and / or The antireflective coating composition comprises 0-10 wt% of a surfactant; and / or The antireflective coating composition comprises 90-99 wt% solvent.

[0020] According to some embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition includes 0.003-5 wt% of a hot acid generator; and / or The antireflective coating composition includes 0-8 wt% of a photoacid generator.

[0021] According to some embodiments, the hot acid generator is an ionic hot acid generator and / or a nonionic hot acid generator; and / or The crosslinking agent is selected from at least one of melamine crosslinking agents, urea crosslinking agents, epoxy-containing polymer crosslinking agents, polyol crosslinking agents, and hydroxyl-containing polymers; and / or The photoacid generator is selected from at least one of the following: halogenated compound photoacid generators, sulfonate photoacid generators, sulfonyl diazomethane photoacid generators, onium salt photoacid generators, nitrobenzyl derivative photoacid generators, diazomethane derivative photoacid generators, oxime photoacid generators, and triazine photoacid generators; and / or The surfactant is selected from at least one of nonionic surfactants; and / or The solvent is selected from at least one of alcohol solvents, ester solvents, ether solvents, and cyclic ketone solvents.

[0022] According to a second aspect of this disclosure, a method for preparing the antireflective coating composition according to the first aspect is provided, comprising: Polymers having structural units as shown in formula (1) are prepared by polycondensation of compounds having the structure of formula (8) and / or compounds having the structure of formula (9) with compounds having the structure of formula (10): (8) (9) (10).

[0023] According to a third aspect of this disclosure, an antireflective coating is provided, which is formed from the antireflective coating composition according to the first aspect.

[0024] According to a fourth aspect of this disclosure, a semiconductor patterning method is provided, the semiconductor patterning method comprising: The antireflective coating composition according to the first aspect is applied to a semiconductor substrate to form a coating film and crosslinked as an antireflective coating. Photoresist is applied onto the anti-reflective coating to form a photoresist layer; The semiconductor pattern is obtained after exposure and development.

[0025] The antireflective coating composition of this application has, but is not limited to, the following beneficial effects: The polymer in the antireflective coating composition of this application is a self-crosslinking system or a system that can crosslink with a crosslinking agent. The antireflective coating formed by this composition has low gas release. At the same time, the antireflective coating formed by this composition has a high etching rate and does not mix with the solvent of the photoresist. Attached Figure Description

[0026] Figure 1 A scanning electron microscope (SEM) top view of the pattern obtained using the anti-reflective coating of Example 3 is shown.

[0027] Figure 2 A scanning electron microscope (SEM) cross-sectional view of the pattern obtained using the anti-reflective coating of Example 3 is shown. Detailed Implementation

[0028] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. Through these descriptions, the features and advantages of the present application will become clearer and more apparent.

[0029] The term “exemplary” as used herein means “serving as an example, embodiment, or illustration.” Any embodiment illustrated herein as “exemplary” is not necessarily to be construed as superior to or better than other embodiments. Although various aspects of embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless specifically indicated otherwise.

[0030] Furthermore, the technical features involved in the different embodiments of this application described below can be combined with each other as long as they do not conflict with each other.

[0031] The present invention provides an antireflective coating composition comprising a polymer having at least one structural unit represented by formula (1);

[0032] R1, R2, and R3 are each independently selected from hydrogen, substituted, or unsubstituted C atoms. 1-10 Alkyl, C 1-10 Heteroalkyl, wherein the substituted C 1-10 The alkyl group is a C substituted with at least one of O, N, S, P and a halogen. 1-10 Alkyl, C 1-10 The heteroatom in a heteroalkyl group includes at least one of N, O, and S; Q includes the structures shown in equation (2) and / or equation (3):

[0033] In formulas (2) and (3), Q1 is selected from the following groups, either substituted or unsubstituted: C 1-11 Alkylene, C 2-4 imidene group, C 5-7 Cycloalkylene, C 6-10 Alpha-aryl, C 3-5 Hybrid aryl, C 1-10 Heteroalkylene and C 3-5 Heterocyclic alkyl groups, wherein C 3-5 Hybrid aryl, C 1-10 Heteroalkylene, C 3-5 The heterocyclic alkyl group includes 1-3 heteroatoms selected from N, O, and S. The substitution refers to the oxidation (=O) or carbon atom (=C) of the carbon atom or hydrogen atom on the heteroatom in the aforementioned group. 1-4 Alkyl, C 1-4 Hydroxyalkyl, C 2-4 Alkenes are replaced; A1 includes the divalent organic groups shown in formula (4), formula (5), formula (6) or formula (7): (4) (5) (6) (7), Among them, R9, R10 and R 11 Each of the following groups, individually selected from substituted or unsubstituted groups: hydrogen, -C(O)-OR 12 C 1-10 Alkyl, C 2-3 alkenyl, C 6-15 Aryl, C 1-6 Heteroalkyl or 5-6 membered heterocyclic alkyl, or R9, R 10 The atoms attached to it together form substituted or unsubstituted groups of the following: C 6-10 aryl, 5-6 membered heteroaryl, 5-6 membered cycloalkyl, 5-6 membered heterocycloalkyl, wherein R 12 Selected from C 1-10 Alkyl, wherein the substitution refers to the substitution of hydrogen atoms on the carbon atom or heteroatom of the above-mentioned group with one or more hydroxyl groups, C 1-4 Hydroxyalkyl, C 1-4 Alkoxy groups are substituted, wherein the heteroatoms in the above groups include at least one of N, O, and S; Indicates the location where it connects to the ring structure.

[0034] "Heteroalkyl" refers to a straight or branched, monovalent saturated aliphatic chain connected to at least one heteroatom, such as, but not limited to, methylamino, aminoethyl or other similar groups.

[0035] In some embodiments, in the repeating unit shown in formula (1), R1, R2, and R3 are each independently selected from hydrogen, substituted, or unsubstituted C. 1-6 Alkyl, C 1-6 Heteroalkyl. Furthermore, R1, R2, and R3 are each independently selected from hydrogen, substituted, or unsubstituted C. 1-4 Alkyl group. More specifically, R1, R2, and R3 are each independently selected from hydrogen, methyl, ethyl, propyl, and butyl. In particular, R1 is C1. 1-4 Alkyl groups (such as methyl, ethyl, propyl, butyl), and R2 and R3 are H.

[0036] In some embodiments, Q1 in formula (2) is selected from the following groups, substituted or unsubstituted: C 1-6 Alkylene, C 2-3 imidene group, C 5-7 Cycloalkylene, C 6-10 Alpha-aryl, C 3-5 Hybrid aryl, C 2-4 Heteroalkylene and C 3-5 Heterocyclic alkyl groups.

[0037] In some embodiments, Q1 is selected from the following groups, substituted or unsubstituted: C 2-6 Alkylene, vinylene, C 5-7 Cycloalkylene, C6-10 arylene, 5-6 quinone heteroarylene, C 2-4 Heteroalkylene and 5-6 membered heterocycloalkylene. Further, Q1 is selected from C... 5-7 Cycloalkylene and C 2-4 Heteroalkylene compounds. The C... 2-4 The heteroalkylene contains 1-2 heteroatoms selected from O or S.

[0038] In some embodiments, Q1 is selected from one of the following groups: -(CH2) n -, -(CH2)2-SS-(CH2)2-, -(CH2)-SS-(CH2)-, -(CH2)-S-(CH2)-, , , , ,-CH=CH-,-(CH2)-O-(CH2)-, , , 、-(CH2)2-S(=O)-(CH2)2-, where n is any integer selected from 1 to 11.

[0039] In some embodiments, A1 in formula (3) is selected from the divalent organic groups shown in formulas (4) to (7), R9, R 10 R 11 Each is independently selected from hydrogen, -C(O)-OR 12 C 1-6 Alkyl, C 2-3 alkenyl, C6 aryl, C 1-6 Heteroalkyl or 5-6 membered heterocyclic alkyl, wherein R 12 Selected from C 1-6 Alkyl groups, or R9, R 10 The atoms attached to it together form substituted or unsubstituted groups of the following: phenyl, 5-6 membered heteroaryl, 5-6 membered cycloalkyl, 3-5 membered heterocycloalkyl.

[0040] In some embodiments, A1 is a divalent organic group as shown in formula (5) or formula (6). Further, in the divalent organic group shown in formula (5), R... 11 Selected from H, C 2-3 Alkenyl, in particular, R 11 It is allyl; among the divalent organic groups shown in formula (6), R9 and R 10 Each is independently selected from H and C. 1-4 Alkyl, C 2-3 Alkenyl groups, particularly R9 and R 10 All are H.

[0041] In some embodiments, at least one carbon atom in the divalent organic group represented by formula (5) or formula (6) is oxidized (=O).

[0042] A1 is selected from one of the following groups:

[0044] In one embodiment, the weight-average molecular weight of the polymer may be 1000-20000 g / mol, preferably 2000-10000; and / or The polymer's PDI (Polydispersity Index) can be 1.3-3.0, preferably 1.6-2.5.

[0045] In some specific embodiments, the weight-average molecular weight of the polymer can be 1000 g / mol, 2000 g / mol, 5000 g / mol, 8000 g / mol, 10000 g / mol, 12000 g / mol, 15000 g / mol, 18000 g / mol, 20000 g / mol, or any combination thereof.

[0046] In some specific embodiments, the PDI of the polymer can be 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5 or any combination thereof.

[0047] In one embodiment, the antireflective coating composition may include 0.5-5.5 wt% of a polymer, preferably 0.8-3.5 wt% of a polymer, based on the total weight of the antireflective coating composition.

[0048] In some specific embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition may include polymers in a weight percentage of 0.5 wt%, 0.8 wt%, 1.0 wt%, 1.2 wt%, 1.4 wt%, 1.5 wt%, 1.6 wt%, 1.8 wt%, 2.0 wt%, 2.2 wt%, 2.4 wt%, 2.5 wt%, 2.6 wt%, 2.8 wt%, 3.0 wt%, 3.2 wt%, 3.4 wt%, 3.5 wt%, 3.8 wt%, 4.0 wt%, 4.5 wt%, 5.5 wt%, or any combination thereof.

[0049] In one embodiment, the antireflective coating composition may include one or more of the following: a thermal acid generator, a crosslinking agent, a photoacid generator, a surfactant, and a solvent.

[0050] In some specific embodiments, the anti-reflective coating composition of this application may not include a crosslinking agent. The polymer in the anti-reflective coating composition of this application is a self-crosslinking system, and the anti-reflective coating formed by it has low gas release. At the same time, the anti-reflective coating formed by this composition has a high etching rate and does not mix with the solvent of the photoresist.

[0051] In one embodiment, based on the total weight of the antireflective coating composition, the antireflective coating composition may include 0-15 wt% of a hot acid generator; and / or The antireflective coating composition may include 0-20 wt% of a crosslinking agent; and / or The antireflective coating composition may include 0-15 wt% of a photoacid generator; and / or The antireflective coating composition may include 0-20 wt% of a surfactant; and / or The antireflective coating composition may include 90-99 wt% solvent.

[0052] In one embodiment, based on the total weight of the antireflective coating composition, the antireflective coating composition comprises 0.001-10 wt% of a hot acid generator; and / or The antireflective coating composition comprises 0-10 wt% of a photoacid generator; and / or The antireflective coating composition comprises 1-10 wt% surfactant; and / or The antireflective coating composition comprises 95-99 wt% solvent.

[0053] In one embodiment, based on the total weight of the antireflective coating composition, the antireflective coating composition comprises 0.003-5 wt% of a hot acid generator; and / or The antireflective coating composition includes 0-8 wt% of a photoacid generator.

[0054] In some specific embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition may include a hot acid generator in a weight percentage of 0.001 wt%, 0.002 wt%, 0.003 wt%, 0.005 wt%, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, 5 wt%, 6 wt%, 6.5 wt%, 7 wt%, 7.5 wt%, 8 wt%, 8.5 wt%, 9 wt%, 9.5 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, or any combination thereof.

[0055] In some specific embodiments, based on the total weight of the antireflective coating composition, the weight percentage of the crosslinking agent that the antireflective coating composition may include is 0.001 wt%, 0.002 wt%, 0.003 wt%, 0.005 wt%, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, 5 wt%, 6 wt%, 6.5 wt%, 7 wt%, 7.5 wt%, 8 wt%, 8.5 wt%, 9 wt%, 9.5 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, or any combination thereof.

[0056] In some specific embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition may include a photoacid generator in a weight percentage of 0.001 wt%, 0.002 wt%, 0.003 wt%, 0.005 wt%, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, 5 wt%, 6 wt%, 6.5 wt%, 7 wt%, 7.5 wt%, 8 wt%, 8.5 wt%, 9 wt%, 9.5 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, or any combination thereof.

[0057] In some specific embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition may include surfactants in a weight percentage of 0.001 wt%, 0.002 wt%, 0.003 wt%, 0.005 wt%, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, 5 wt%, 6 wt%, 6.5 wt%, 7 wt%, 7.5 wt%, 8 wt%, 8.5 wt%, 9 wt%, 9.5 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, or any combination thereof.

[0058] In some specific embodiments, based on the total weight of the antireflective coating composition, the antireflective coating composition may include solvents in a weight percentage of 0.001 wt%, 0.002 wt%, 0.003 wt%, 0.005 wt%, 0.01 wt%, 0.05 wt%, 0.1 wt%, 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, 5 wt%, 6 wt%, 6.5 wt%, 7 wt%, 7.5 wt%, 8 wt%, 8.5 wt%, 9 wt%, 9.5 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, or any combination thereof.

[0059] In one embodiment, the hot acid generator may be an ionic hot acid generator and / or a nonionic hot acid generator.

[0060] In some specific embodiments, the ionic hot acid generator may include, but is not limited to, triethylamine dodecyl sulfonate, ammonium p-toluenesulfonate, sulfonates such as carbocyclic aryl and heteroaryl sulfonates, aliphatic sulfonates, benzenesulfonates, and trifluoromethanesulfonates; the nonionic hot acid generator may include, but is not limited to, cyclohexyl trifluoromethanesulfonate, methyl trifluoromethanesulfonate, cyclohexyl 2,4,6-triisopropylbenzenesulfonate, 2-nitrobenzyl p-toluenesulfonate, benzoin toluenesulfonate, 2-nitrobenzyl toluenesulfonate, tris(2,3-dibromopropyl)-1,3,5-triazine-trione, alkyl sulfonates, p-toluenesulfonic acid, dodecylbenzenesulfonic acid, oxalic acid, phthalic acid, phosphoric acid, camphorsulfonic acid, and their salts, as well as those hot acid generators disclosed in patent US10429737B2.

[0061] The composition for forming the antireflective film for photolithography according to the present invention may contain a crosslinking compound as a crosslinking agent. There are no particular limitations on such crosslinking compounds, but it is preferable to use crosslinking compounds having at least two crosslinking-forming substituents. For example, compounds having two or more, for example two to six, isocyanate groups, epoxy groups, hydroxymethylamino groups, alkoxymethylamino groups, and hydroxyl groups, etc., capable of crosslinking reactions, such as polyols, can be used.

[0062] The crosslinking compound can be, for example, a nitrogen-containing compound having one to six, or two to four, nitrogen atoms, wherein the nitrogen atoms are replaced by alkoxymethyl groups such as hydroxymethyl, methoxymethyl, ethoxymethyl, butoxymethyl, and hexoxymethyl. Specifically, examples include nitrogen-containing compounds such as hexamethoxymethylmelamine, tetramethoxymethylguanidine, 1,3,4,6-tetra(methoxymethyl)glyurea, 1,3,4,6-tetra(butoxymethyl)glyurea, 1,3,4,6-tetra(hydroxymethyl)glyurea, 1,3-tetra(hydroxymethyl)urea, 1,1,3,3-tetra(butoxymethyl)urea, 1,1,3,3-tetra(methoxymethyl)urea, 1,3-bis(hydroxymethyl)-4,5-dihydroxy-2-imidazolinone, and 1,3-bis(methoxymethyl)-4,5-dimethoxy-2-imidazolinone. Alternatively, as a crosslinking compound, a polymer can be used, which is manufactured using an acrylamide compound or a methacrylamide compound substituted with hydroxymethyl or alkoxymethyl groups such as N-hydroxymethyl (acrylamide), N-methoxymethyl (methacrylamide), N-ethoxymethyl (acrylamide), and N-butoxymethyl (methacrylamide). Examples of such polymers include poly(N-butoxymethylacrylamide), copolymers of N-butoxymethylacrylamide and styrene, copolymers of N-hydroxymethylmethacrylamide and methyl methacrylate, copolymers of N-ethoxymethylmethacrylamide and benzyl methacrylate, and copolymers of N-butoxymethylacrylamide, benzyl methacrylate, and 2-hydroxypropyl methacrylate.

[0063] Furthermore, when the crosslinking compound is selected as a polyol, there are no particular limitations, but compounds having two or more primary alcohols are preferred. Examples of compounds represented by the following structural formulas are listed below: , , , , , , , , .

[0065] In one embodiment, the photoacid generator may be selected from at least one of halogenated compound photoacid generators, sulfonate photoacid generators, sulfonyl diazomethane photoacid generators, onium salt photoacid generators, nitrobenzyl derivative photoacid generators, diazomethane derivative photoacid generators, oxime photoacid generators, and triazine photoacid generators.

[0066] In some specific embodiments, the photoacid generator may be selected from ononium salts such as (tetra-tert-butylphenyl)-trifluoromethanesulfonate iodonium salt and triphenyltrifluoromethanesulfonate sulfonium salt; halogenated photoacid generators such as phenylbis(trichloromethyl)-s-triazine; sulfonate photoacid generators such as benzoin toluenesulfonate and N-hydroxysuccinimide trifluoromethanesulfonate; and disulfonyl diazomethanes, etc.

[0067] Onium salts, such as triphenylsulfonium trifluoromethanesulfonate, (p-tert-butoxyphenyl)diphenylsulfonium trifluoromethanesulfonate, tri(p-tert-butoxyphenyl)sulfonium trifluoromethanesulfonate, and triphenylsulfonium p-toluenesulfonate; nitrobenzyl derivatives, such as 2-nitrobenzyl-p-toluenesulfonate, 2,6-dinitrobenzyl-p-toluenesulfonate, and 2,4-dinitrobenzyl-p-toluenesulfonate; sulfonates, such as 1,2,3-tris(methanesulfonyloxy)benzene, 1,2,3-tris(trifluoromethanesulfonyloxy)benzene, and 1,2,3-tris(p-toluenesulfonyloxy)benzene; diazomethane derivatives, such as bis(benzenesulfonyl) (O-)diazomethane, bis(p-toluenesulfonyl)diazomethane; dioxime derivatives, such as bis-O-(p-toluenesulfonyl)-α-dimethyldioxime and bis-O-(n-butanesulfonyl)-α-dimethyldioxime; sulfonate derivatives of N-hydroxyimide compounds, such as N-hydroxysuccinimide methanesulfonate and N-hydroxysuccinimide trifluoromethanesulfonate; and halogenated triazine compounds, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine and 2-(4-methoxynaphthyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, etc.

[0068] In one embodiment, the surfactant is a nonionic surfactant.

[0069] In some specific embodiments, the surfactant is a polyoxyethylene alkyl ether such as polyoxyethylene lauryl (dodecyl) ether, polyoxyethylene stearyl ether, polyoxyethylene hexadecyl ether, and polyoxyethylene oil-based ether; a polyoxyethylene alkyl aryl ether such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; a polyoxyethylene, polyoxypropylene block polymer, sorbitol monolaurate, sorbitol monopalmitate (hexadecanoate), sorbitol monostearate, and sorbitol monooleate (octadecylene). Nonionic surfactants include sorbitol fatty acid esters such as sorbitol trioleate and sorbitol tristearate; and polyoxyethylene sorbitol fatty acid esters such as polyoxyethylene sorbitol monolaurate, polyoxyethylene sorbitol monopalmitate (hexadecanoate), polyoxyethylene sorbitol monostearate, polyoxyethylene sorbitol monooleate (octadecenoic acid), polyoxyethylene sorbitol trioleate, and polyoxyethylene sorbitol tristearate.

[0070] In one embodiment, the solvent is selected from at least one of alcohol solvents, ester solvents, ether solvents, and cyclic ketone solvents.

[0071] In some specific embodiments, the solvent includes, but is not limited to, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, methyl 2-hydroxy-3-methylbutyrate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, DMF, N-methylpyrrolidone, etc.

[0072] The present invention also provides a method for preparing an antireflective coating composition, comprising: Polymers having structural units as shown in formula (1) are prepared by polycondensation of compounds having the structure of formula (8) and / or compounds having the structure of formula (9) with compounds having the structure of formula (10): (8) (9) (10).

[0073] In some specific embodiments, polymers having structural units as shown in formula (1) can be synthesized from compounds having the structure of formula (8) and compounds having the structure of formula (10): .

[0074] In some specific embodiments, in the above reaction, the molar ratio of the compound having the structure of formula (8) to the compound having the structure of formula (10) is 3:2-2:3, preferably 5:4-4:5.

[0075] In some specific embodiments, the molar ratio of the compound having the structure of formula (8) to the compound having the structure of formula (10) can be 3:2, 5:4, 6:5, 8:7, 1:1, 7:8, 5:6, 4:5, 2:3 or any combination thereof.

[0076] In some specific embodiments, the compound having the structure of formula (8) is a dicarboxylic acid compound, without particular limitation. For example, compounds represented by the following structural formulas can be listed:

[0078] In some specific embodiments, polymers having structural units as shown in formula (1) can also be synthesized from compounds having the structure of formula (9) and compounds having the structure of formula (10): (9)+ (10) →

[0080] In some specific embodiments, in the above reaction, the molar ratio of the compound having the structure of formula (9) to the compound having the structure of formula (10) is 3:2-2:3, preferably 5:4-4:5.

[0081] In some specific embodiments, the molar ratio of the compound having the structure of formula (9) to the compound having the structure of formula (10) can be 3:2, 5:4, 6:5, 8:7, 1:1, 7:8, 5:6, 4:5, 2:3 or any combination thereof.

[0082] In some specific embodiments, compounds of formula (9) may be listed, for example, as compounds represented by the following structural formulas: .

[0083] The present invention further provides an anti-reflective coating formed from the aforementioned anti-reflective coating composition.

[0084] The polymer formula (1) provided by this invention contains monomer units capable of crosslinking with functional groups such as hydroxyl, amino, and mercapto groups. Therefore, a crosslinking agent can be omitted from the coating, or a polyhydroxy compound can be added as a crosslinking agent, effectively solving or preventing the generation of gas (gas release) during the baking process. Taking hydroxyl as a functional group as an example, its crosslinking mechanism is as follows: .

[0085] The present invention also provides a method for forming a semiconductor pattern, comprising: The aforementioned antireflective coating composition is applied to a semiconductor substrate to form a coating film, and crosslinked to form an antireflective coating. Photoresist is applied onto the anti-reflective coating to form a photoresist layer; The semiconductor pattern is obtained after exposure and development.

[0086] This invention does not impose any special restrictions on the source of any raw materials; unless otherwise specified, they are all conventional products that can be obtained commercially.

[0087] Synthetic Example 1: Synthesis of diallyl-5-methoxymethyl-1,3,5-triazine-2,4,6-trione 10.5 g of diallyl isocyanurate and 16.2 g of N,N-diisopropylethylamine were dissolved in acetonitrile. 4.2 g of chloromethyl methyl ether was slowly added dropwise to the solution. The mixture was allowed to react for 12 hours, and the reaction was confirmed by TLC. The reaction was then quenched by adding 40 mL of saturated ammonium chloride solution. The mixture was extracted with EtOAc (3 × 45 mL). The combined organic phases were washed with 55 mL of saturated NaCl solution, dried over MgSO4, filtered, and concentrated. The residue was purified by column chromatography (PE / EtOAc = 10:1) to give 10.1 g of a colorless oil, diallyl-5-methoxymethyl-1,3,5-triazine-2,4,6-trione, in 80% yield.

[0088] Synthetic Example 2: 1,3-Dicyclooxyethylenemethyl-5-methoxymethyl-1,3,5-triazine-2,4,6(1H,3H,5H)-trione 9.0 g of the product obtained in Synthesis Example 1 was dissolved in 50 mL of dichloromethane. 15.6 g of m-chloroperoxybenzoic acid was added to the mixture in five batches. The mixture was allowed to react for 3 hours. After TLC detection, the reaction was complete. The reaction was then quenched by adding 40 mL of saturated sodium carbonate aqueous solution. The mixture was extracted with dichloromethane (3 × 30 mL). The combined organic phases were washed with 55 mL of saturated NaCl aqueous solution, dried over MgSO4, filtered, and concentrated. The residue was purified by column chromatography (PE / EtOAc = 5:1) to give 8.0 g of a colorless oil, 1,3-diepoxyethylenemethyl-5-methoxymethyl-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, in 79% yield.

[0089] Synthesis example 3 2.85 g of the compound obtained in Synthesis Example 2, 2.1 g of 3,3'-dithiodipropionic acid, and 50 mg of triethylbenzylammonium chloride were dissolved in 19.6 mL of propylene glycol monomethyl ether. The mixture was reacted at 120 °C for 15 hours. The resulting polymer solution was analyzed by GPC. The polymer results in the solution were converted to standard polystyrene, with a weight-average molecular weight of 5800 g / mol and a PDI of 1.86. The resulting polymer has the structural units shown in the figure below: .

[0090] Synthesis example 4 2.85 g of the compound obtained in Synthesis Example 2 and 1.72 g of 1,4-dimethylformamide were used. - Cyclohexanedicarboxylic acid and 50 mg of triethylbenzylammonium chloride were dissolved in 18.3 mL of propylene glycol monomethyl ether. The mixture was reacted at 120 °C for 18 hours. The resulting polymer was analyzed by GPC, and the results of the polymer in the solution were converted to standard polystyrene. The weight-average molecular weight was 9400 g / mol, and the PDI was 1.78. The resulting polymer has the structural units shown in the figure below: .

[0091] Synthesis example 5 2.85 g of the compound obtained in Synthesis Example 2, 1.7 g of allyl isocyanurate, and 50 mg of triethylbenzylammonium chloride were dissolved in 15.4 mL of propylene glycol monomethyl ether. The mixture was reacted at 120 °C for 14 hours. The resulting polymer was analyzed by GPC, and the results of the polymer in the solution were converted to standard polystyrene. The weight-average molecular weight was 2700 g / mol, and the PDI was 1.65. The resulting polymer has the structural units shown in the figure below: .

[0092] Synthesis example 6 2.85 g of the compound obtained in Synthesis Example 2, 1.14 g of dihydrouracil, and 50 mg of triethylbenzylammonium chloride were dissolved in 16 mL of propylene glycol monomethyl ether. The mixture was reacted at 120 °C for 14 hours. The resulting polymer was analyzed by GPC, and the results of the polymer in the solution were converted to standard polystyrene. The weight-average molecular weight was 2900 g / mol, and the PDI was 1.76. The resulting polymer has the structural units shown in the figure below: .

[0093] Synthesis Example 7 520 mg of 2-hydroxyethyl methacrylate, 600 mg of methyl methacrylate, and 1.62 g of benzyl methacrylate were dissolved in tetrahydrofuran, and 160 mg of azobisisobutyronitrile (AIBN) was added. The mixture was heated to reflux and reacted for 24 hours. The resulting polymer was precipitated with n-hexane and dried in a drying oven to obtain the desired polymer. The polymer in the resulting solution was converted to standard polystyrene, with a weight-average molecular weight of 23,000 g / mol and a PDI of 2.45. The resulting polymer has the structural units shown in the figure below: 。

[0094] Synthesis example 8 2.81 g of 1,3-bis(epoxyethylenemethyl)-5-(2-propenyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 2.1 g of 3,3′-dithiodipropionic acid, and 50 mg of triethylbenzylammonium chloride were dissolved in 16 mL of propylene glycol monomethyl ether. The mixture was reacted at 120 °C for 15 hours. The resulting polymer was analyzed by GPC, and the results of the polymer in the solution were converted to standard polystyrene. The weight-average molecular weight was 3200 g / mol, and the PDI was 1.64. The resulting polymer has the structural units shown in the figure below: .

[0095] Synthesis example 9 2.81 g of 1,3-bis(epoxyethylenemethyl)-5-(2-propenyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 1.7 g of monoallyl isocyanurate, and 50 mg of triethylbenzylammonium chloride were dissolved in 16 mL of propylene glycol monomethyl ether. The mixture was reacted at 120 °C for 16 hours. The resulting polymer was analyzed by GPC, and the results of the polymer in the solution were converted to standard polystyrene. The weight-average molecular weight was 4300 g / mol, and the PDI was 1.70. The resulting polymer has the structural units shown in the figure below: .

[0096] Examples 1-7 and Comparative Examples 1-5 Examples 1-7 and Comparative Examples 1-5 were prepared as shown in Table 1 below, with a total of 100 samples for each sample excluding additives.

[0097] Table 1

[0098] In Table 1, HMMM stands for hexamethoxymethyl melamine; p TSA is p-toluenesulfonic acid; OK73 is a solvent consisting of 70% propylene glycol monomethyl ether (PGME) and 30% propylene glycol methyl ether acetate (PGMEA); KP341 is an organosiloxane polymer (purchased from Shin-Etsu Chemical).

[0099] Test Example 1: Solvent Resistance Test in Photoresist Solvent The compositions obtained in embodiments 1-7 and comparisons 1-5 were spin-coated onto a silicon wafer at 1500 rpm, followed by heating at 205°C for 60 seconds to obtain the corresponding antireflective films. The film thickness was measured using an ellipsometer. The film was then immersed in ethyl lactate, a photoresist solvent, for 20 seconds. After baking at 100°C for 30 seconds, the film thickness was measured again. The results are shown in Table 2 below. Table 2

[0100] According to the solvent resistance evaluation in the table above, all of Examples 1-7 exhibit good solvent resistance. Examples 1-3 show that the polymers of this application exhibit good solvent resistance regardless of whether they contain a crosslinking agent, a melamine crosslinking agent, or a polyol crosslinking agent. Comparative Examples 2-5 show that the polymer of Synthetic Example 8 only exhibits good solvent resistance in the presence of the specific crosslinking agent HMMM (Comparative Example 4). It lacks solvent resistance in the absence of a crosslinking agent or in the presence of polyol crosslinking agents (Comparative Examples 2-3). Similarly, the polymer of Synthetic Example 9 (Comparative Example 5) also lacks solvent resistance in the absence of a crosslinking agent, making it impossible to further spin-coat photoresist material onto the films of Comparative Examples 2, 3, and 5. This is because polymers like Synthetic Examples 8 and 9 cannot undergo self-crosslinking to ensure good solvent resistance, nor can they undergo crosslinking reactions with polyol compounds to ensure good solvent resistance. They only exhibit sufficient solvent resistance when the hydroxyl groups in the polymer react with additionally introduced crosslinking agents that can crosslink with hydroxyl groups, such as HMMM. As can be seen from Example 7 and Comparative Example 1, the polymer of Synthetic Example 3 of this application can be crosslinked with the crosslinking agent, which makes Example 7 have good solvent resistance. Moreover, after being mixed with the polymer of Synthetic Example 7, it can still exhibit excellent solvent resistance in the absence of the crosslinking agent. This is comparable to the solvent resistance of the polymer of Synthetic Example 7 in Comparative Example 1 in the presence of the crosslinking agent HMMM. This shows that the polymer of this application can undergo a crosslinking reaction with hydroxyl polymers.

[0101] Experimental Example 2: Determination of Dry Etching Rate The compositions obtained in Examples 1 to 7, Comparative Examples 1 and 4 were coated onto silicon wafers using a spin coater at a speed of 1500 rpm, followed by heating at 205°C for 60 seconds to obtain the corresponding antireflective films. The film thickness was then measured. The etching rate was determined using a HAASRODE-E200A inductively coupled plasma etching machine manufactured by Jiangsu Luwen Instrument Co., Ltd., with CF4 as the etching gas. The obtained etching rates are shown in Table 3 below. Table 3

[0102] As can be seen from the etching rate measurements in the table above, Examples 1 to 7 exhibit faster etching rates compared to Comparative Example 1. From Examples 7 and Comparative Example 1, it can be seen that although the polymer of Synthetic Example 7 exhibits certain solvent resistance in the presence of the crosslinking agent HMMM, its etching rate is significantly lower than that of Example 7, which was mixed with the polymer of Synthetic Example 3. This indicates that the polymer of this application is beneficial for improving the etching rate of the antireflective coating.

[0103] Experimental Example 3: Evaluation of Photolithography Effect The antireflective coating of Example 3 was applied to a 300 mm silicon wafer and baked on a hot plate at 205°C for 60 seconds. The rotation time and speed were varied as needed to obtain a 90 nm thick film. Next, positive photoresist was spin-coated onto the antireflective coating and baked to cure, resulting in a 90 nm thick photoresist layer. Exposure was performed using an ArF scanner with a numerical aperture of 1.35, and the exposed photoresist was baked at 75°C for 60 seconds. Development was then performed using a tetramethylammonium hydroxide-based developer. The resulting pattern was examined using a scanning electron microscope (SEM). Figure 1 and Figure 2 .from Figure 1 and Figure 2 As can be seen from the above, the anti-reflective coating of Example 3 has excellent photolithographic properties.

[0104] Experimental Example 4: Characterization of Gas Release The anti-reflective coating composition was applied to a 300 mm silicon wafer under spin-coating conditions of 1500 rpm / min and baked on a hot plate at 205°C for 60 seconds. During baking, an air particle counter was placed 3 cm above the center of the silicon wafer to collect the changes in air particle count. The results are shown in Table 4 below. Table 4

[0105] As can be seen from Table 4, Examples 1-7 have significantly lower gas release compared to Comparative Examples 1 and 4. In particular, Examples 1 and 4-7, which did not contain a crosslinking agent, have even lower gas release. This is because small molecule crosslinking agents have poor thermal stability and are prone to decomposition or volatilization during heating, resulting in gas release.

[0106] The present application has been described above with reference to preferred embodiments; however, these embodiments are merely exemplary and illustrative. Various substitutions and modifications can be made to the present application based on these embodiments, all of which fall within the protection scope of the present application.

Claims

1. An anti-reflective coating composition, characterized in that, The antireflective coating composition comprises a polymer having at least one structural unit represented by formula (1); R1, R2, and R3 are each independently selected from hydrogen, substituted, or unsubstituted C atoms. 1-10 Alkyl, C 1-10 Heteroalkyl, wherein the substituted C 1-10 The alkyl group is a C substituted with at least one of O, N, S, P and a halogen. 1-10 Alkyl, C 1-10 The heteroatom in a heteroalkyl group includes at least one of N, O, and S; Q includes the structure shown in equation (2) or equation (3): In formulas (2) and (3), Q1 is selected from the following groups, either substituted or unsubstituted: C 1-11 Alkylene, C 2-4 imidene group, C 5-7 Cycloalkylene, C 6-10 Alpha-aryl, C 3-5 Hybrid aryl, C 1-10 Heteroalkylene and C 3-5 Heterocyclic alkyl groups, wherein C 3-5 Hybrid aryl, C 1-10 Heteroalkylene, C 3-5 The heterocycloalkyl group includes 1-3 heteroatoms selected from N, O, and S. The substitution refers to the substitution of one or more oxygen atoms (=O) or carbon atoms on the carbon atom or heteroatom of the aforementioned group. 1-4 Alkyl, C 1-4 Hydroxyalkyl or C 2-4 Alkenes are replaced; A1 includes the divalent organic groups shown in formula (4), formula (5), formula (6) or formula (7): （4） （5） （6） （7）， Among them, R9, R 10 and R 11 Each of the following groups, individually selected from substituted or unsubstituted groups: hydrogen, -C(O)-OR 12 C 1-10 Alkyl, C 2-3 alkenyl, C 6-15 Aryl, C 1-6 Heteroalkyl or 5-6 membered heterocyclic alkyl, or R9, R 10 The atoms bonded to it together form the following substituted or unsubstituted groups: C 6-10 aryl, 5-6 membered heteroaryl, 5-6 membered cycloalkyl, 5-6 membered heterocycloalkyl, wherein R 12 Selected from C 1-10 Alkyl, wherein the substitution refers to the substitution of hydrogen atoms on the carbon atom or heteroatom of the above-mentioned group by one or more hydroxyl groups, C 1-4 Hydroxyalkyl, C 1-4 Alkoxy groups are substituted, wherein the heteroatoms in the above groups include at least one of N, O, and S; Indicates the location where it connects to the ring structure.

2. The antireflective coating composition according to claim 1, characterized in that, In formula (2), Q1 is selected from one of the following groups: -(CH2) n -, -(CH2)2-SS-(CH2)2-, -(CH2)-SS-(CH2)-, -(CH2)-S-(CH2)-, , , , , -CH=CH-, -(CH2)-O-(CH2)-, , , 、-(CH2)2-S(=O)-(CH2)2-, where n is any integer from 1 to 11.

3. The antireflective coating composition according to claim 1, characterized in that, In formula (3), A1 is selected from one of the following groups: 。 4. The antireflective coating composition according to claim 1, characterized in that, The polymer has a weight-average molecular weight of 1000-20000 g / mol; and / or The polymer has a PDI of 1.3-3.

0.

5. The antireflective coating composition according to claim 4, characterized in that, The polymer has a weight-average molecular weight of 2000-10000 g / mol; and / or The polymer has a PDI of 1.6-2.

5.

6. The antireflective coating composition according to claim 1, characterized in that, Based on the total weight of the antireflective coating composition, the antireflective coating composition comprises 0.5-5.5 wt% of a polymer.

7. The antireflective coating composition according to claim 6, characterized in that, Based on the total weight of the antireflective coating composition, the antireflective coating composition comprises 0.8-3.5 wt% of polymer.

8. The antireflective coating composition according to any one of claims 1-7, characterized in that, The antireflective coating composition further includes one or more of the following: a thermal acid generator, a crosslinking agent, a photoacid generator, a surfactant, and a solvent.

9. The antireflective coating composition according to any one of claims 1-7, characterized in that, Based on the total weight of the antireflective coating composition, the antireflective coating composition further comprises 0-15 wt% of a hot acid generator; and / or The antireflective coating composition further comprises 0-20 wt% of a crosslinking agent; and / or The antireflective coating composition further comprises 0-15 wt% of a photoacid generator; and / or The antireflective coating composition further comprises 0-20 wt% of a surfactant; and / or The antireflective coating composition further comprises 90-99 wt% solvent.

10. The antireflective coating composition according to claim 9, characterized in that, Based on the total weight of the antireflective coating composition, the antireflective coating composition comprises 0.001-10 wt% of a hot acid generator; and / or The antireflective coating composition comprises 0-10 wt% of a photoacid generator; and / or The antireflective coating composition comprises 0-10 wt% of a surfactant; and / or The antireflective coating composition comprises 90-99 wt% solvent.

11. The antireflective coating composition according to claim 10, characterized in that, Based on the total weight of the antireflective coating composition, the antireflective coating composition comprises 0.003-5 wt% of a hot acid generator; and / or The antireflective coating composition includes 0-8 wt% of a photoacid generator.

12. The antireflective coating composition according to claim 8, characterized in that, The hot acid generator is an ionic hot acid generator and / or a non-ionic hot acid generator; and / or The crosslinking agent is selected from at least one of melamine crosslinking agents, urea crosslinking agents, epoxy-containing polymer crosslinking agents, polyol crosslinking agents, and hydroxyl-containing polymers; and / or The photoacid generator is selected from at least one of the following: halogenated compound photoacid generators, sulfonate photoacid generators, sulfonyl diazomethane photoacid generators, onium salt photoacid generators, nitrobenzyl derivative photoacid generators, diazomethane derivative photoacid generators, oxime photoacid generators, and triazine photoacid generators; and / or The surfactant is selected from at least one of nonionic surfactants; and / or The solvent is selected from at least one of alcohol solvents, ester solvents, ether solvents, and cyclic ketone solvents.

13. A method for preparing the antireflective coating composition according to any one of claims 1 to 12, characterized in that, The preparation method includes: Polymers having structural units as shown in formula (1) are prepared by polycondensation of compounds having the structure of formula (8) and / or compounds having the structure of formula (9) with compounds having the structure of formula (10): （8） （9） （10）。 14. An anti-reflective coating, characterized in that, The antireflective coating is formed from the antireflective coating composition according to any one of claims 1 to 12.

15. A method for forming a semiconductor pattern, characterized in that, The semiconductor patterning method includes: The antireflective coating composition according to any one of claims 1 to 12 is applied to a semiconductor substrate to form a coating film and crosslinked as an antireflective coating. Photoresist is applied onto the anti-reflective coating to form a photoresist layer; The semiconductor pattern is obtained after exposure and development.

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