Temperature compensation method for a MEMS capacitive inertial sensor sensitive capacitor compensation array

By employing a piecewise first-order linear fitting and tolerance error control-based temperature compensation method, the computational complexity and accuracy deviation issues of MEMS capacitive inertial sensors are resolved, achieving efficient and low-cost temperature compensation suitable for resource-constrained scenarios.

CN122408829APending Publication Date: 2026-07-17FUYUANXIN (SHANGHAI) TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FUYUANXIN (SHANGHAI) TECH CO LTD
Filing Date
2026-04-23
Publication Date
2026-07-17

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Abstract

本发明公开了MEMS电容式惯性传感器敏感电容补偿阵列的温度补偿方法，具体涉及MEMS惯性传感器技术领域，包括在所述MEMS电容式惯性传感器的工作温度范围内进行温度实验，获取多个测试温度点及各温度点对应的MEMS敏感电容值，将各所述MEMS敏感电容值转换为对应的敏感电容补偿阵列参数配置值。本发明针对MEMS电容式惯性传感器敏感电容补偿阵列的步进离散特性，将四舍五入取整前置为拟合约束条件，以电容调节步进值为单位设定容许误差，采用分段一阶线性拟合实现温度补偿，相比现有高阶拟合及智能算法，在保证补偿精度的同时显著降低计算复杂度，易于在ASIC及嵌入式平台实现，有效抑制传感器零偏温漂，具备良好的工程适应性和可扩展性。
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