Precursor, method for preparing precursor and ferroelectric capacitor, chip, memory

Abstract

The application provides a precursor, a preparation method of the precursor and a ferroelectric capacitor, a chip, a memory and an electronic device, relates to the technical field of semiconductors, and provides an interface intercalation and improves the material of the precursor used for preparing the interface intercalation, so that the problems of the performance reduction of the ferroelectric capacitor caused by impurities generated in the preparation process and the influence of etching materials on the surface morphology of the film layer caused by the fact that the intermediate product contains the etching materials are solved on the basis of the improvement of the defects of the ferroelectric layer and the guarantee of the high thermal stability of the precursor. The precursor comprises a central atom and a plurality of ligands coordinated with the central atom. The central atom comprises a group Vb metal atom, and the plurality of ligands comprise a tert-butylimido and a multidentate ligand.

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