Charge amount detection ion sensor and ion formation device including the same

Abstract

The present invention provides a charge amount measuring ion sensor and an ion forming apparatus including the same, the charge amount measuring ion sensor including: a sensing portion configured on a migration path of ions generated from an ion source for generating ions other than electrostatic ions, to sense the ions generated from the ion source in real time; a controller for displaying the ions sensed by the sensing portion; a cable for connecting the controller and the sensing portion; and a power portion for delivering a power source to the controller.

Description

Technical Field

[0001] This embodiment relates to a charge detection ion sensor that can be used to confirm the performance of an ion source, specifically, a charge detection ion sensor that can detect the amount of charge and sense the generation and display of ions, and an ion forming apparatus including the same. Background Technology

[0002] Static electricity can be generated by a variety of factors, including friction and peeling. It can occur in various environments, including solids, liquids, insulators, and conductors. While the amount of positive and negative charge generated in static electricity is usually equal, in actual processes, due to the difference in capacitance between the two types of charge, static electricity often exhibits only one polarity.

[0003] In the manufacturing process of electronic devices such as memory components, flat panel displays, and integrated circuits, the generation of static electricity can cause impurities to adhere to the electronic devices, or the discharge of static electricity can damage the patterns.

[0004] Currently, various methods are being used to suppress or eliminate the generation of static electricity, with the primary recommendation being the use of ionization devices. These ionization devices generate positive and negative ions, which are released into the air using a fan or compressed air. The released ions provide ion particles that are opposite in charge to the charged particles on the substrate where static electricity is generated, thereby neutralizing the charged particles and eliminating static electricity.

[0005] However, traditional ionization devices for static electricity removal release ions into the air in non-vacuum environments, thus having the drawback of being difficult to apply in vacuum environments requiring high cleanliness. Traditional static electricity removal processes involve two steps: first, forming a thin film of the electronic device in a vacuum environment, and then removing static electricity in a non-vacuum environment using a separate static removal process.

[0006] Traditional static eliminators separate the thin-film process from the static removal process and cannot immediately remove the static electricity generated during thin-film formation. Therefore, they have limitations in preventing static electricity from damaging components.

[0007] Furthermore, an ion sensor is required to confirm the performance of this electrostatic eliminator. However, in the past, to monitor the charge removal result of the ion source, an ion sensor had to be directly installed inside the cavity for detection.

[0008] Furthermore, non-contact ion sensors are expensive, large in size, and difficult to miniaturize. They are also complex and laborious to use, making it difficult to continuously detect ion quantities in real time. Summary of the Invention

[0009] The problem to be solved

[0010] In this context, one objective of this embodiment is to provide a technique that can improve the aforementioned problems.

[0011] Another objective of this embodiment is to provide a technique that minimizes the impact on cavity process conditions, thereby minimizing the impact on specific processes performed by the static eliminator within the cavity.

[0012] Another objective of this embodiment is to provide a technique that minimizes the modification of the cavity and allows for the addition of an antistatic device without replacing the existing cavity.

[0013] Another objective of this embodiment is to provide a technology that integrates a charge measurement ion sensor unit built into one side of the cavity and ion source junction, enabling the detection and display of ions generated by the ion source.

[0014] Another objective of this embodiment is to provide a technology related to an ion forming device that can be miniaturized, including a charge measurement ion sensor that can easily and continuously confirm changes in the amount of ions generated in real time.

[0015] Problem Solution

[0016] To achieve the above objectives, one embodiment provides a charge measurement ion sensor comprising: a sensing unit disposed on the migration path of ions generated by an ion source, for real-time sensing of ions generated by the ion source, the ion source being used to generate destatic ions; a controller for displaying the ions sensed by the sensing unit; a cable for connecting the controller and the sensing unit; and a power supply unit for supplying power to the controller.

[0017] The sensing element may include one or more holes formed in the same direction as the migration path of the ions.

[0018] The controller can numerically represent the ion sensing quantity when the sensor detects ions, and can display in real time whether ions have been detected via LED lights.

[0019] Another embodiment can provide an ion forming apparatus including a charge measurement ion sensor unit, the charge measurement ion sensor unit comprising: an ion source whose output portion is connected to a cavity through a through hole, wherein ions are generated between the anode and cathode by a voltage supplied from a source electrode to the anode of the output portion, thereby forming ions in the internal space of the cavity; and an ion sensor unit disposed on the migration path of the ions generated by the ion source, thereby sensing the ions generated by the ion source in real time.

[0020] The ion sensor unit may include: a sensing unit for sensing ions generated by the ion source; a controller for displaying the ions sensed by the sensing unit; a cable for connecting the controller and the sensing unit; and a power unit for supplying power to the controller.

[0021] The ion sensor unit can be configured in the coupling part where the ion source and the cavity are combined, on the ion migration path formed between the ion source and the cavity.

[0022] The ion sensor unit can be fixed on at least one side of the ion migration path, either above or below.

[0023] The ion sensor unit can be configured in the coupling part where the ion source and the cavity are combined, on the ion migration path formed in the direction towards the interior of the cavity.

[0024] The sensing element may include one or more holes formed in the same direction as the migration path of the ions.

[0025] The controller can numerically represent the ion sensing quantity when the sensor detects ions, and can display in real time whether ions have been detected via LED lights.

[0026] Another embodiment provides an ion source including a charge-measuring ion sensor unit, which includes: a connector for connecting the cavity to the device to prevent the inflow of external fluid; an ion source whose output is connected to the cavity through a through-hole, and which generates ions between the anode and cathode by utilizing the voltage delivered from the source electrode to the anode of the output, thereby forming ions in the internal space of the cavity; and an ion sensor unit integrally disposed on one side inside the connector to sense the ions generated by the ion source in real time.

[0027] The connector may include: a first connecting structure which is coupled to a through hole formed at one end of a vacuum cavity; and a second connecting structure which is coupled to a device with a cross-sectional area different from that of the through hole.

[0028] The cavity may include: a service port for connecting to utilities and auxiliary devices; and a view port for visual observation of the interior of the cavity.

[0029] The vacuum state can be 10. -3 ~10 -8 The atmosphere above Torr.

[0030] The second connection structure can be combined with the output section.

[0031] The first connection structure may include: an output tube extension structure for extending an output tube formed within a through-hole embedded structure; and a port connection structure for engaging with a port of the cavity.

[0032] The output intensity can be adjusted by widening or narrowing the output direction of the ions through the output tube.

[0033] The first connecting structure may further include a surrounding panel connecting structure to facilitate the arrangement of the surrounding panel along the internal space direction of the cavity.

[0034] The output section further includes an opening that is open toward the cavity, through which the cavity and the output section can communicate.

[0035] The cathode may include a central cathode located at the center of the opening and an edge cathode located at the edge of the opening.

[0036] The ion sensor unit may include: a sensing unit for sensing ions generated by the ion source; a controller for displaying the ions sensed by the sensing unit; a cable for connecting the controller and the sensing unit; and a power unit for supplying power to the controller.

[0037] The sensing element can be cylindrical or various shapes and can be configured toward the interior of the connector.

[0038] The sensing element may include one or more holes formed in the direction of ion flow toward the interior of the connector.

[0039] The sensing unit can be bolted to the connector via an ion sensor coupling portion formed through one side of the connector.

[0040] The sensing unit can be aligned with the panel connection structure disposed on one side of the first connection structure of the connector.

[0041] The controller can use the numerical value of ions sensed by the sensing unit to represent the ion sensing quantity, and can display whether ions have occurred in real time through LED lights.

[0042] Invention Effects

[0043] As described above, this embodiment has the technical effect of improving the above-mentioned problems.

[0044] Furthermore, according to this embodiment, the impact on the cavity process conditions can be minimized, thereby minimizing the impact on the specific processes implemented by the static eliminator within the cavity.

[0045] Furthermore, according to this embodiment, the modification of the cavity is minimized, and an anti-static device can be added without replacing the existing cavity.

[0046] Furthermore, according to this embodiment, a technology is provided that integrates a charge measurement ion sensor unit on one side of the cavity and the ion source junction, enabling the detection and display of ions generated by the ion source.

[0047] Furthermore, according to this embodiment, an ion forming device related technology is provided, which can be miniaturized and includes a charge measurement ion sensor that can easily and continuously confirm changes in the amount of ions generated in real time.

[0048] The technical problem to be solved in this article is not limited to the technical problems mentioned above. Those skilled in the art to which this invention pertains can clearly understand from the following content another technical problem not mentioned. Attached Figure Description

[0049] Figure 1 This is a view of a cavity in which a specific process is carried out under vacuum conditions.

[0050] Figure 2 This is a view of the ion source and cavity combined as described in one embodiment.

[0051] Figure 3 This is a side cross-sectional view of the ion source described in one embodiment.

[0052] Figure 4 This is a partial view of the ion source described in one embodiment.

[0053] Figure 5 This is a view of the ion source as described in one embodiment, connected to the housing and cavity.

[0054] Figure 6 This is a view of an embodiment of an ion source being coupled to a cavity via a connector.

[0055] Figure 7 This is a view of an embodiment of the ion source being connected to a cavity via a connector extending the length of an output tube structure.

[0056] Figure 8 This is a cross-sectional view of an embodiment of the ion source being connected to the cavity via a connector.

[0057] Figure 9 This is a structural diagram of an ion-forming apparatus including the connector described in one embodiment.

[0058] Figure 10 This is a perspective view of the connector described in one embodiment.

[0059] Figure 11 This is a first schematic diagram of an ion source equipped with a charge measurement ion sensor section.

[0060] Figure 12 This is a second schematic diagram of an ion source equipped with a charge measurement ion sensor.

[0061] Figure 13 This is a view of the ion sensor section.

[0062] Figure 14 This is a partial view of the sensing unit.

[0063] Figure 15 This is a perspective view of the ion sensor unit, which is integrally configured on one side inside the connector. Detailed Implementation

[0064] Hereinafter, some embodiments of the present invention will be described in detail with reference to schematic diagrams. It should be noted that when components in the various figures are labeled with reference numerals, even if the same component is shown in different figures, it will be given the same numeral as much as possible. Furthermore, when describing the present invention, detailed descriptions of related well-known structures or functions may be omitted if it is believed that such detailed descriptions would obscure the essential points of the invention.

[0065] Furthermore, when describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish one component from others and do not limit the nature, order, or sequence of the components. When a component is described as being "connected," "joined," or "connected" to another component, that component may be directly connected or connected to that other component. However, it should be understood that components may also be "connected," "joined," or "connected" to another component.

[0066] Figure 1 This is a view of a cavity used to perform a specific process under vacuum conditions, which provides the space required to perform a specific process on a target object.

[0067] like Figure 1 As shown, a specific process can be performed on the target object 1 under a high vacuum state inside the cavity 10.

[0068] In the field of process technology, 10 -3 ~10 -9 The pressure range of a Torr is understood to be the high vacuum state. In a high vacuum state, most air molecules have been removed, and there is almost no collision between ordinary gas and gas molecules. Besides high vacuum, it can also be divided into medium vacuum and low vacuum states. It should be understood that the medium vacuum state is typically equivalent to 1–10. -3The pressure range of torr should be understood as the pressure range of 1 torr at atmospheric pressure for low vacuum. It should be understood that medium vacuum is suitable for evaporation, drying, and localized coating processes, while low vacuum is reportedly used in commercial applications such as vacuum cleaners and vacuum packaging machines.

[0069] It is understood that the process technology field can complete a variety of processes under high vacuum conditions.

[0070] A representative example is high-vacuum deposition technology. High-vacuum deposition technology refers to the technique of evaporating a precursor of the material to be evaporated into a gaseous phase in a vacuum atmosphere, forming a thin film condensed phase on the substrate surface. This process can be used as a method to transfer material from one surface to the surface of a target object, which is completed under high vacuum conditions; therefore, it is also called high-vacuum deposition. High-vacuum deposition technology can be used in semiconductor manufacturing, optical coatings, and the manufacturing processes of various sensors and electronic devices. It can be used for the extreme purification of materials or to obtain extremely thin coatings. As is well known, high-vacuum deposition includes physical vapor deposition (PVD) and chemical vapor deposition (CVD). PVD can include: the process of evaporating a material using physical methods and transferring its vapor to a target object; CVD can include: the process of preparing the material to be deposited into a gaseous state, placing the gas on the target object, and then initiating a chemical reaction for deposition.

[0071] Physical vapor deposition (PVD) includes processes such as vacuum deposition, sputtering, and ion plating, while chemical vapor deposition (CVD) includes processes such as APVCD, LPCVD, PECVD, HDPCVD, and ALCVD.

[0072] According to one embodiment of the present invention, the specific process implemented inside the cavity 10 may include at least one of vacuum PVD (Physical Vapor Deposition) and vacuum CVD (Chemical Vapor Deposition) processes, preferably vacuum PVD (Physical Vapor Deposition), and more preferably vacuum deposition (Evaporation).

[0073] Furthermore, organic deposition processes targeting the object 1 can be performed inside the cavity 10. Organic deposition processes typically prefer to be completed under high vacuum conditions. Organic deposition processes require maintaining a certain level of organic purity, and high vacuum minimizes interactions with other gases, thus better preserving the purity of the organic material. Moreover, high vacuum conditions can produce high-quality coatings with the desired thickness and structure, a characteristic that also benefits organic deposition processes. Furthermore, the unidirectional linear migration of molecules from the source electrode to the target object 1 under high vacuum, along with the reduced conflict or reaction with other gases, leading to high deposition efficiency, is another reason why high vacuum processes are used for organic deposition.

[0074] The cavity 10 may be connected to or include means for maintaining a high vacuum. For example, the cavity 10 may be connected to a vacuum pump for purging gas from the cavity 10, generating and maintaining a vacuum, and may include a vacuum gauge for monitoring and detecting the pressure inside the cavity 10.

[0075] In addition, the cavity 10 is not limited to a process cavity, but may include non-process cavities, and may also include various cavities used in a vacuum state.

[0076] To achieve specific processes within the cavity 10, the cavity 10 may be formed with multiple ports 20, 30, and 40.

[0077] The cavity 10 may have a process port 40. The process port 40 may be a connection point directly related to a specific process implemented in the cavity 10. Gases, liquids, or materials required for a specific process can be delivered into the cavity 10 through the process port 40. Alternatively, devices for detecting or analyzing the state within the cavity 10 may be connected to the process port 40, in relation to the implementation of a specific process. The process port 40 may be designed to meet the requirements of a specific process and may be applicable to other uses. For example, the process port 40 may be a port for delivering reactive gases in chemical vapor deposition, a port for delivering target materials in physical vapor deposition, etc.

[0078] The cavity 10 may have a service port 20. The service port 20 may be a connection point related to the maintenance and management of the cavity 10. The service port 20 may be used to connect utilities such as vacuum pumps, cooling systems, power supply devices, vacuum gauges, and auxiliary devices.

[0079] The cavity 10 may have a viewport 30. An administrator can directly observe the process conditions inside the cavity 10 through the viewport 30. Alternatively, a management device (e.g., a camera or other optical device) can be connected to the viewport 30, allowing the administrator to remotely monitor the process conditions inside the cavity 10. The viewing window of the viewport 30 may be made of materials such as tempered glass, ceramics, industrial diamond, quartz, industrial sapphire, and reinforced plastics. Such materials can withstand extreme high vacuum and high temperature environments and possess high optical transparency. Furthermore, the viewport 30 may have a leak-proof vacuum sealing structure to prevent any impact on the high vacuum state inside the cavity 10.

[0080] like Figure 1 As shown, service port 20 is located above viewport 30, but this is not a limitation; service port 20 and viewport 30 are configured in different locations.

[0081] The cavity 10 includes such a structure and device, and a specific process can be performed within the cavity 10. At this time, the formation of static electricity on the target object 1 will pose a problem.

[0082] There are several reasons why target object 1 may generate static electricity. For example, static electricity can be generated by friction between target object 1 and other objects. Also, during certain process steps, the deposition or etching process may cause an uneven charge distribution, which can lead to static electricity on target object 1. In addition, the insulating layer disposed on target object 1 may hinder charge migration, which can lead to the formation and further accumulation of static electricity.

[0083] This static electricity can generate a sufficiently high voltage to damage the microstructure of the target object 1, and generate a force that pulls or pushes away the microparticles in the cavity 10. This can also lead to process defects, affect the electrical characteristics of the target object 1, and reduce the overall performance of the process equipment.

[0084] To address the aforementioned problems, embodiments of this specification provide an ion-forming apparatus for removing static electricity within the cavity 10, particularly for removing static electricity formed on the target object 1. This ion-forming apparatus minimizes the impact on the process conditions of the cavity 10, minimizes the impact of the ion-forming apparatus on specific processes performed within the cavity 10, minimizes modifications to the cavity 10, and allows for the addition of the ion-forming apparatus without replacing the existing cavity 10.

[0085] The ion forming apparatus does not require additional process gas delivery; instead, it can utilize the high vacuum state of the cavity 10 to form ions within the cavity 10.

[0086] The ion-forming apparatus includes an ion source, and an electric field can be formed between the electrodes disposed between the ion source electrodes. Electrons detached from one electrode of the ion source are accelerated and output through the electric field between the electrodes. These accelerated electrons collide with gas molecules in a high-vacuum state within the cavity 10, ionizing the gas molecules to form multiple ions. Furthermore, as these ions migrate towards the target object 1, static electricity generated in the target object 1 can be cleared. This phenomenon in a high-vacuum state is called Townsend discharge, but the present invention is not limited to this terminology.

[0087] This ion-forming apparatus does not require the additional supply of process gases and does not include an additional vacuum device, thus minimizing the impact on the process conditions of the chamber 10. Furthermore, since this ion-forming apparatus does not require the additional supply of process gases and does not include an additional vacuum device, its configuration can be simplified, minimizing modifications to the chamber 10.

[0088] The ion source can be combined with service port 20 or viewport 30 to minimize modifications to cavity 10.

[0089] Figure 2 This is a view of the ion source and cavity combined as described in one embodiment.

[0090] like Figure 2 As shown, the ion forming apparatus 200 may include an ion source 210 and a viewport bonding structure 220. The viewport bonding structure 220 may be a device that supports the bonding of the ion source 210 and the viewport 30.

[0091] The viewport assembly 220 may include: a first region having a viewing window for an observer to visually observe the interior space of the cavity 10; and a second region having a through-hole for assembling the ion source 210. The first and second regions can be fixed to the cavity 10 by a viewport assembly bracket.

[0092] The perspective window is positioned in the first zone, and its corners may be rounded to allow for close integration with the first zone.

[0093] The first region includes: region 1-1, which is provided with a first viewing window for observing one side of the internal space of the cavity 10; and region 1-2, which is provided with a second viewing window for observing the other side of the internal space of the cavity 10. Regions 1-1 and 1-2 may be located on opposite sides. Furthermore, regions 1-1 and 1-2 may include a viewing window mounting bracket for fixing the viewing window to the cavity 10.

[0094] The second region is located between the first-1 region and the first-2 region. Furthermore, the second region may include a connector for combining the ion source 210 with the through-hole. The connector may include a first connection structure combined with the through-hole and a second connection structure combined with the output portion of the ion source 210. Further, the through-hole and the output portion of the ion source 210 may have different cross-sectional sizes.

[0095] Furthermore, the ion forming apparatus 200 may include a service port connection structure (not shown) replacing the viewport connection structure 220. The service port connection structure (not shown) may be a device supporting the ion source 210 and the service port 20. In one embodiment, no additional service port connection structure (not shown) is provided, and a portion of the ion source 210 is configured to replace the function of the service port connection structure (not shown).

[0096] Furthermore, the ion forming apparatus 200 may further include means for adjusting the output direction of the ions, so as to form ions toward the target material 1 in which a specific process is performed.

[0097] The ion forming apparatus 200 may include a connector for connecting one port of the cavity 10 to the ion source 210. The connector may include: a first connecting structure that can be coupled to a through-hole formed at one port of the cavity; and a second connecting structure that can be coupled to an output portion exposing the anode. The through-hole coupled to the first connecting structure and the output portion coupled to the second connecting structure may have different cross-sectional sizes.

[0098] The first connecting structure may include: a through-hole embedding structure having an internal spatial orientation in the cavity 10 for embedding a through-hole; and an output tube extension structure for extending an output tube formed inside the through-hole embedding structure. The outer diameter of the through-hole embedding structure may be equal to the content of the through-hole, so that the through-hole embedding structure is embedded inside the through-hole and achieves internal engagement.

[0099] In addition, the output intensity can be adjusted by widening or narrowing the output direction through the output tube.

[0100] The first and second connecting structures may have multiple holes for engaging the coupling element. Furthermore, the first connecting structure includes a flexible material seal disposed on the opposite side of the through hole, and the second connecting structure may include a flexible material seal disposed on the opposite side of the output portion.

[0101] The ion source 210 may include a source electrode 211 and an output section 212.

[0102] The source electrode 211 may include a power supply device. The power supply device can deliver a specific voltage to the electrode disposed on the output section 212. This specific voltage can be a high voltage, equivalent to several hundred to several thousand volts. The power supply device can receive a high voltage from an external source via a cable and deliver it to the electrode, or it can receive a voltage with a lower voltage level from an external source, then increase the voltage level through power conversion before delivering it to the electrode.

[0103] The source electrode 211 can be surrounded by a metal casing to prevent electromagnetic waves generated by power supply devices, etc., from propagating to the outside, including the cavity 10.

[0104] In the output section 212, the side facing the service port 20 can be open, while the other side is closed. The output section 212 can communicate with the internal space of the high-vacuum cavity 10 through the service port 20, but it is completely not connected to this external space. For example, the output section 212 may not be connected to the source electrode 211, and it may not be directly connected to the external space of the cavity 10.

[0105] The internal space of cavity 10 is maintained in a high vacuum state (e.g., 10 -3 ~10 -9 Torr, preferably, 10 -5 ~10 -9 When the torrent is applied, the output section 212, which is not connected to it, can also maintain a high vacuum state inside the chamber. Therefore, the ion forming apparatus described in one embodiment does not require the additional supply of process gas and does not include an additional vacuum device, thus minimizing the impact on the process conditions of the chamber 10. Furthermore, since the ion forming apparatus described in one embodiment does not require the additional supply of process gas and does not include an additional vacuum device, the configuration can be simplified, and modifications to the chamber 10 can be minimized.

[0106] In this high-vacuum atmosphere, when the source electrode 211 delivers a specific voltage to the electrode of the output section 212, ions can be formed inside the high-vacuum cavity 10.

[0107] The ions formed inside the cavity 10 can contact the target object 1 and de-electrode the target object 1 at the same time.

[0108] The internal spaces of cavity 10 and output section are interconnected and share 10 -3 ~10 -9 The vacuum state of Torr, preferably, shares 10 -5 ~10 -9 The vacuum state of Torr.

[0109] Specific processes requiring a vacuum can be implemented in the cavity 10. These specific processes may include at least one of vacuum PVD (Physical Vapor Deposition) and vacuum CVD (Chemical Vapor Deposition) processes for depositing material on the target object 1. Furthermore, the specific processes may further include a vacuum process for depositing organic matter on the target object. To implement such specific processes, the cavity 10 can be maintained under a vacuum.

[0110] The vacuum state can be 10. -3 ~10 -9 Torr, preferably, can be 10 -5 ~10 -9 Thor.

[0111] The cavity 10 is connected to the internal space of the output section, and may not have a vacuum pump or an ionized gas injection device.

[0112] The cavity 10 may include a service port 20 for connecting to utilities and auxiliary devices, and a view port 30 for visually observing the interior of the cavity.

[0113] The output section 212 may further include an opening that opens to the side for the service port 20 or the viewport 30, and the cavity 10 and the output section 212 may be connected through the opening. Specifically, the cavity 10 and the output section 212 may be coupled together by a coupling portion provided at the edge of the opening.

[0114] The coupling part includes at least one selected from the group consisting of a service port coupling structure (not shown), a viewport coupling structure 220, a housing joint, a coupling element, and a seal. The cavity 10 and the output part 212 are tightly coupled through the coupling part, thereby blocking the inflow of external fluid.

[0115] Figure 3 This is a side cross-sectional view of the ion source described in one embodiment. Figure 4 This is a partial view of the ion source described in one embodiment.

[0116] like Figure 3 and Figure 4 As shown, the ion source 210 may include a source electrode 211 and an output section 212.

[0117] The output unit 212 may include a positive electrode 310, a negative electrode 320, an output housing 330, etc.

[0118] The output housing 330 may have a structure that is open on one side facing the service port 20 or the viewport 30 and closed on the other side. The interior of the output housing 330 may form an assembly space for the anode 310 and the cathode 320, which is open on one side and closed on the other side, so as to communicate with the internal space of the cavity under high vacuum.

[0119] The output housing 330 may include a housing joint 331 parallel to the cavity frame. This housing joint 331 can be tightly engaged with the cavity frame via a viewport coupling structure 220 to prevent direct communication between the interior of the output housing 330 and the external space of the cavity. To ensure a tight fit between the housing joint 331 and the cavity frame, a coupling element 332, such as a bolt, may be applied. The mating surfaces may be further configured with seals, such as O-rings.

[0120] The space formed inside the output housing 330 can accommodate the anode 310 and the cathode 320.

[0121] The cathode 320 may include a central cathode 322, an edge cathode 324, and a cathode connection portion 326. The central cathode 322 may be located at the center of the opening surface of the output housing 330. When viewed from the side of the viewport 30, the central cathode 322 may be located at the center of the opening of the viewport 30. The edge of the opening surface of the output housing 330 may have an edge cathode 324. The edge cathode 324 may be formed along the edge of the opening surface of the output housing 330. When the opening surface is circular, the edge cathode 324 may also be circular-hollow donut-shaped.

[0122] The central cathode 322 and the edge cathode 324 can be electrically connected via the cathode connection portion 326, and can have different potentials. A magnet can be further disposed within the cathode connection portion 326, the central cathode 322, or the edge cathode 324. The magnetic field formed by this magnet affects the movement of electrons released from the cathode 320, regulating the electron migration direction or migration speed.

[0123] A power supply device is configured in the source electrode 211, which can deliver voltage to the anode 310. Furthermore, based on this specific voltage, an electric field is formed between the anode 310 and the cathode 320, which can cause ions to form in the internal space of the cavity.

[0124] The output unit 212 may not require an additional cooling device or a separate process gas delivery device. In conventional technology, a separate cooling device is sometimes attached to the anode to cool it. However, the ion source 210 described in one embodiment utilizes a high-vacuum atmosphere, thus consuming less power and generating less heat, eliminating the need for a separate cooling device. Furthermore, conventional technology further includes a separate process gas delivery device to form ions. However, the ion source 210 described in one embodiment utilizes a high-vacuum atmosphere, therefore, ion formation can be achieved without additional process gas delivery.

[0125] The cathode 320 includes: a first cathode disposed on one side of the edge of the opening facing the cavity 10; a third cathode disposed on the other side of the edge of the opening; and a second cathode disposed at the center of the opening. The electrode spacing between the anode 310 and the cathode 320 determines the output direction of the ions.

[0126] Ion source 210 can be coupled to a port other than the specific process application port. Specifically, ion source 210 can be coupled to service port 20 or viewport 30. Service port 20 and viewport 30 can be located at different heights from the target object 1. Therefore, it is not necessary to adjust the output direction of the ions output by ion source 210.

[0127] The electrode spacing may include: a first electrode spacing between the anode 310 and the first cathode, a second electrode spacing between the anode 310 and the second cathode, and a third electrode spacing between the anode 310 and the third cathode.

[0128] The lengths of at least two of the first, second, and third electrode spacings can be different. Therefore, when ions are output, they can be directed towards the direction of the cathode, which has the shortest electrode spacing among the first, second, and third electrode spacings.

[0129] Furthermore, the target object 1 can be disposed apart from the ion source 210, and the target object 1 can be disposed on the extension line of the direction where the cathode is located, which has the shortest electrode spacing among the first electrode spacing, the second electrode spacing, and the third electrode spacing.

[0130] Preferably, the length of the first electrode spacing can be the longest, and the length of the third electrode spacing can be the shortest. Therefore, when ions are output, they can be deflected towards the direction where the third cathode is located.

[0131] Furthermore, the target object 1 can be disposed apart from the ion source 210, and the target object 1 can be disposed on the extension line on the side where the third cathode is located.

[0132] The ion forming apparatus 200 can determine the output direction of ions based on the shape of the edge cathode 324.

[0133] The peripheral edge of the edge cathode 324 is tapered, while the remaining periphery can be cylindrical with a certain thickness. Specifically, in the tapered portion of the edge cathode 324, the periphery facing the output section 212 can have a certain thickness, while the peripheral edge facing the cavity 10 can be thinned. Therefore, ions can be output towards the tapered portion of the edge cathode 324. Furthermore, the degree of ion diffusion can be determined based on the tilt angle of the tapered portion of the edge cathode 324.

[0134] Furthermore, the edge cathode 324 is cylindrical, with its inner diameter increasing towards the cavity 10. Therefore, the shape of the edge cathode 324 allows the output ions to diffuse in a funnel shape.

[0135] In addition, the edge cathode 324 may be configured with multiple mating grooves in the direction of the output section 212.

[0136] The output section 212 may further include a porous baffle. The porous baffle is located on the side of the cathode 320 facing the ion output direction to prevent ions from strongly and directly hitting the target object 1. Specifically, the porous baffle is located on the side of the central cathode 322 facing the ion output direction to allow ions to diffuse and form ions on the entire surface of the target object 1.

[0137] The magnetic field generated between the electrodes accelerates the output of ions to the space between the central cathode 322 and the edge cathode 324. A porous baffle is disposed on one side of the central cathode 322, thereby minimizing the obstruction to the flow of output ions.

[0138] The porous baffle is disposed on one side of the central cathode 322, and can be located at the center or edge of the central cathode 322. Preferably, it can be located at the center of the central cathode 322.

[0139] The porous baffle can be formed into a circular, rectangular, conical, or polygonal shape with at least one groove. In this case, ions can also be directed towards the groove.

[0140] The ion forming apparatus 200 may further include an ion concentration detection unit for a point ion concentration in the internal space of the cavity 10. The ion concentration detection unit may be disposed in the internal space of the cavity 10 by means of a bracket extending toward the internal space of the cavity 10.

[0141] Furthermore, the ion forming apparatus 200 may include a connector for connecting one port of the cavity 10 to the ion source 210. The connector may include: a first connection structure that is coupled to a through hole formed at one port of the cavity; and a second connection structure that is coupled to the output portion 212 of the exposed anode 310.

[0142] The ion concentration detection unit can be connected to the ion source control device located outside the cavity 10 via a monitoring cable, which can be configured to pass through one side of the first connection structure of the connector.

[0143] The ion forming apparatus 200 can be controlled by the following method: by using an ion concentration detection unit disposed in the internal space of the cavity 10 to detect the ion concentration at a single point in the internal space of the cavity 10, and adjusting the voltage level delivered from the source electrode 211 to the anode 310 based on the detected ion concentration, thereby adjusting the amount of ions generated by the ion forming apparatus 200.

[0144] When the detected ion concentration is below the standard concentration, the voltage level delivered from the source electrode 211 to the anode 310 is increased to increase the ion generation. Conversely, when the detected ion concentration exceeds the standard concentration, the voltage level delivered from the source electrode 211 to the anode 310 is restored to its initial value to reduce the ion generation.

[0145] The voltage delivered to the anode 310 can be a pulse pattern with a specific period.

[0146] Pulsed voltage involves repeatedly applying and blocking voltage at regular intervals, thus improving ion generation efficiency compared to continuous direct current (DC) voltage. This also prevents excessive charge buildup on the electrode surface during ionization, helping to reduce electrode load and increase ionization efficiency.

[0147] Furthermore, when a pulsed voltage is used, power is delivered to the electrodes intermittently, which reduces heat generation compared to a continuous voltage application. This helps keep the electrodes at a low temperature, reducing the need for additional cooling.

[0148] Furthermore, the output unit 212 can share the high vacuum state with low air density, thereby suppressing internal heating. Also, heat convection due to low air density is almost non-existent, suppressing heat conduction-induced heating. Applying this method simultaneously with pulsed voltage further suppresses heating. Therefore, static electricity elimination can be effectively implemented without the need for a separate cooling device.

[0149] Figure 5 This is a view of the ion source as described in one embodiment, connected to the housing and cavity.

[0150] like Figure 5As shown, the ion source 210 formed within the ion forming apparatus 200 is connected to one port of the cavity 10 via one side of the housing 231. This port of the cavity 10 can be a port that does not directly participate in the process; specifically, a short port of the cavity 10 can be a service port 20 or a viewport 30.

[0151] An ion source 210 can be connected to one side of the housing 231, and a surrounding plate 340 can be provided on one side of the housing 231 facing the cavity 10. Therefore, the ions output by the output unit can diffuse and be output through the surrounding plate 340, thereby preventing the ions from directly irradiating the target object 1, and allowing the output ions to diffuse to the entire surface of the target object 1, effectively eliminating static electricity.

[0152] Additionally, one side of the housing 231 may be provided with a device bracket (not shown) to connect the enclosure 340 to one side of the housing 231. The enclosure 340 and one side of the housing 231 may be connected by the device bracket (not shown).

[0153] An ion source 210 is configured on the other side of the housing 231. Ions generated by the ion source 210 migrate along the internal migration path of the housing 231 to the other side of the housing 231 and are output to the cavity 10.

[0154] When the internal migration path length of the housing 231 is short, there are fewer collisions between ions or between ions and internal gas molecules in the output ions, which increases the output intensity. However, when the internal migration path length of the housing 231 is long, there are more collisions between ions or between ions and internal gas molecules in the output ions, which decreases the output intensity. That is, the output intensity of the output ions can be adjusted by controlling the internal migration path length of the housing 231.

[0155] One side of the housing 231 can be connected to the cavity 10, and some structures of the housing 231 can extend into the interior of the cavity 10 to achieve configuration.

[0156] The internal space of the housing 231 can be wider or narrower closer to the cavity 10. When outputting ions, the internal space of the housing 231 will widen or narrow the output direction to adjust the output intensity.

[0157] In one example, the smaller the internal space of the housing 231 is closer to the cavity 10, the smaller the diameter of the internal space of the output section 212 will increase the ion output per unit area of ​​the output section 212, thus making the output stronger.

[0158] In another example, when the internal space of the housing 231 is larger closer to the cavity 10, the increased diameter of the internal space of the output section 212 will reduce the ion output per unit area of ​​the output section 212, thus weakening the output.

[0159] Figure 6 This is a view of an embodiment where the ion source is connected to the cavity via a connector. Figure 7 This is a view of an embodiment of the ion source being connected to a cavity via a connector extending the length of an output tube structure. Figure 8 This is a cross-sectional view of an embodiment of the ion source being connected to the cavity via a connector. Figure 9 This is a structural diagram of an ion-forming apparatus including the connector described in one embodiment. Figure 10 This is a perspective view of the connector described in one embodiment.

[0160] like Figures 6 to 10 As shown, the ion source 210 within the ion forming apparatus 200 can be coupled to one port of the cavity 10 via the connector 227. This port of the cavity 10 can be a port that does not directly participate in the process; specifically, the port of the cavity 10 can be a service port 20 or a viewport 30.

[0161] The ion source 210 is connected via a connector 227, and a surrounding plate 340 is provided on one side of the connector 227 facing the cavity 10. Therefore, the ions output from the output unit diffuse through the surrounding plate 340, thereby preventing the ions from directly irradiating the target object 1 and allowing the output ions to diffuse to the entire surface of the target object 1, effectively removing static electricity.

[0162] Furthermore, one side of the connector 227 has a shroud connecting portion 341, so that the shroud 340 is disposed at a distance from the connector 227, and the shroud 340 and the connector 227 can be connected by the shroud connecting portion 341.

[0163] When the length of the output tube extension structure 228b of the connector 227 is short, there are fewer collisions between ions or between ions and internal gas molecules in the output ions, which increases the output intensity. However, when the length of the output tube extension structure 228b of the connector 227 is long, there are more collisions between ions or between ions and internal gas molecules in the output ions, which decreases the output intensity. That is, the output intensity of the output ions can be adjusted by the length of the output tube extension structure 228b of the connector 227.

[0164] The connector 227 may include: a first connection structure 228, which is coupled to a through hole 226 formed at one port of the cavity 10; and a second connection structure 229, which is coupled to the output portion 212 exposing the anode 310. The port of the cavity 10 coupled to the first connection structure 228 of the connector 227 may not be a port directly involved in a specific process; specifically, it may be a service port 20 or a viewport 30.

[0165] The through-hole 226, which is coupled to the first connecting structure 228, and the output portion 212, which is coupled to the second connecting structure 229, have different cross-sectional sizes. For example, the size of the output portion 212 can be larger or smaller than that of the through-hole 226. Therefore, a connector 227 can be used to tightly connect the through-hole 226 and the output portion 212, which have different cross-sectional sizes. Thus, the cavity 10 and the ion forming apparatus 200 can be tightly connected without further modification.

[0166] The first connecting structure 228 may include: a through-hole embedding structure 228a, which has a through-hole 226 embedded in the cavity 10 facing the internal space; an output tube extension structure 228b, which extends the output tube formed inside the through-hole embedding structure 228a; and a port connecting structure 228c, which is connected to one port of the cavity 10. That is, one port of the cavity 10 can be tightly connected through the port connecting structure 228c, and ions can be output to the cavity 10 through the internal space of the through-hole embedding structure 228a and the output tube extension structure 228b.

[0167] The outer diameter of the through-hole embedding structure 228a can be equal to the inner diameter of the through-hole 226, so that the through-hole embedding structure 228a is embedded inside the through-hole 226 and achieves internal engagement. Therefore, it can prevent the through-hole embedding structure 228a from being tightly connected to the through-hole 226, thereby preventing the inflow of external fluid and improving the durability of the engagement portion between the connector 227 and the cavity 10.

[0168] The output direction of ions can be widened or narrowed by the output tube to adjust the output intensity.

[0169] In one example, when the diameter of the through-hole 226 is smaller than the diameter of the output section 212, the diameter of the through-hole embedding structure 228a of the first connecting structure 228 connected to the through-hole 226 and the output tube formed in the internal space of the output tube extension structure 228b can be smaller than the diameter of the output section 212 formed within the ion source 210. Therefore, a through-hole with a diameter smaller than the diameter of the output section 212 will increase the amount of ions output per unit area by the output section 212, resulting in a stronger output.

[0170] In another example, when the diameter of the through-hole 226 is larger than the diameter of the output section 212, the diameter of the through-hole embedding structure 228a of the first connecting structure 228 connected to the through-hole 226 and the output tube formed in the internal space of the output tube extension structure 228b can be larger than the diameter of the output section 212 formed within the ion source 210. Therefore, a through-hole with a diameter larger than the diameter of the output section 212 will reduce the amount of ions output per unit area by the output section 212, resulting in a weaker output.

[0171] Ions are output through output section 212. They can pass through the second connecting structure 229 through a channel with a narrower diameter, which is equivalent to the diameter of the edge cathode 324, and through the first connecting structure 228 through a channel with an even narrower diameter. That is, the channel through which ions are output can gradually narrow as they pass through the connector 227; the narrower the channel, the stronger the ion output intensity. In addition, as mentioned above, ions can pass through the output tube, thus widening the output direction.

[0172] The first connecting structure 228 and the second connecting structure 229 may have multiple holes for connecting the coupling element 332, such as bolts. Specifically, the port connecting structure 228c of the first connecting structure 228 may have multiple holes spaced apart at certain intervals along its edge to facilitate connection to one port of the cavity 10. Similarly, the second connecting structure 229 may also have multiple holes spaced apart at certain intervals along its edge to facilitate connection to the output section 212.

[0173] The first connecting structure 228 may include a first flexible material seal disposed on the opposite side of the through hole 226, and the second connecting structure 229 may include a second flexible material seal disposed on the opposite side of the output portion 212. Specifically, the port connecting structure 228c of the first connecting structure 228 may include a first flexible material seal on the opposite side of the through hole 226 to facilitate a tight fit with one port of the cavity 10. Furthermore, the second connecting structure 229 may also include a second flexible material seal disposed on the opposite side of the output portion 212 to facilitate a tight fit with the output portion 212. Thus, the ion forming apparatus 200 is tightly fitted with the cavity 10, preventing the inflow of external fluid and maintaining a vacuum state in the internal space.

[0174] The first connecting structure 228 may further include a surrounding plate connecting structure 228d to facilitate the arrangement of the surrounding plate 340 toward the internal space of the cavity 10.

[0175] The enclosure connecting structure 228d can be located on one side of the through-hole embedding structure 228a to provide enclosure 340. Specifically, the enclosure connecting structure 228d can be located on one edge side of the through-hole embedding structure 228a so as not to obstruct the direction of travel of ions output through the through-hole 226. The enclosure connecting structure 228d can be combined with the enclosure connecting part 341 by methods such as welding and screw locking. As needed, multiple enclosure connecting structures 228d can be provided at certain intervals on the edge of the through-hole embedding structure 228a to provide multiple enclosures 340.

[0176] The enclosure 340 can be formed in a circular, rectangular, conical, or polygonal shape with at least one enclosure groove, and can output ions in the direction of the enclosure groove. Specifically, a large number of ions are output in the direction of the enclosure groove formed on the enclosure 340, and a small number of ions are output in the direction without the enclosure groove, thereby adjusting the output direction and output intensity of the ions.

[0177] The enclosure 340 and the enclosure connecting structure 228d are connected by the enclosure connecting part 341 so that they can be arranged at intervals.

[0178] The enclosure connection portion 341 may include an adjustable enclosure connection length adjustment portion to control the degree of ion diffusion. For example, when the length of the enclosure connection portion is short, ions can diffuse further, and when the length of the enclosure connection portion is long, ions can diffuse more narrowly.

[0179] Furthermore, the portion of the enclosure connecting part 341 that connects to the enclosure 340 may include a tilting unit for adjusting the setting angle of the enclosure 340. This allows the angle of the enclosure 340 to be adjusted so that ions are output towards the target object 1.

[0180] That is, the controlled ions are output towards the target object 1 according to the setting angle of the enclosure 340. At the same time, the controlled ions diffuse through the enclosure 340 without directly irradiating the target object 1, thereby ensuring that the target object 1 is not damaged and effectively eliminating the static electricity generated on the target object 1.

[0181] The diffusion degree and output intensity of ions can be adjusted according to the cross-sectional area of ​​the enclosure 340. Specifically, when the cross-sectional area of ​​the enclosure 340 is small, the diffusion degree of ions may be small, and the output intensity may be strong. However, when the cross-sectional area of ​​the enclosure 340 is large, the diffusion degree of ions may be large, and the output intensity may be weak.

[0182] Figure 11 This is a first schematic diagram of an ion source equipped with a charge measurement ion sensor section. Figure 12 This is a second schematic diagram of an ion source equipped with a charge measurement ion sensor. Figure 13 This is a view of the ion sensor section. Figure 14 This is a partial view of the sensor unit. Figure 15 This is a perspective view of the ion sensor unit, which is integrally configured on one side inside the connector.

[0183] like Figures 11 to 15 As shown, the ion sensor unit 410 of one embodiment may include: a sensing unit 411 for sensing ions generated by the ion source 210 in real time; a controller 415 for displaying the ions sensed by the sensing unit 411; a cable 416 for connecting the controller 415 and the sensing unit 411; and a power unit 417 for supplying power to the controller 415.

[0184] Furthermore, in this invention, the charge measurement ion sensor uses a method of directly detecting the charge by means of an ion sensor configured on the ion migration path.

[0185] The sensor unit 411 can sense the ions generated by the ion source 210 in real time. For example... Figure 11 A and Figure 12 As shown in Figure A, the periphery of the sensing unit 411 can directly contact the ions generated by the ion source 210, allowing for real-time confirmation of whether ions have been generated. Thus, when using a charge measurement ion sensor, it is possible to more accurately and directly determine whether ions have been generated by the ion source 210. Therefore, large equipment is not required, enabling miniaturization.

[0186] The ion sensor unit 410 can be disposed in the coupling section where the ion source 210 and the cavity 10 are combined, and is formed on the ion migration path between the ion source 210 and the cavity 10. At this time, after ion generation, the detection potential rises at the node where the highest concentration is formed, thus maximizing the sensor's responsiveness.

[0187] The ion sensor unit 410 can be fixed on at least one side of the ion migration path, either above or below. Therefore, the configuration angle can be freely adjusted according to the shape of the cavity 10 and the process airflow conditions.

[0188] The ion sensor unit 410 can be configured in the coupling section where the ion source 210 and the cavity 10 are combined, along the ion migration path formed in the direction toward the interior of the cavity 10. In this case, it may be advantageous to detect ions distributed inside the cavity 10.

[0189] Specifically, when the ion sensor unit 410 is disposed in the housing 231, it can be disposed on the internal migration path of the housing 231 formed between the ion source 210 and the cavity 10. Furthermore, the ion sensor unit 410 can be disposed on a portion of the structure of the housing 231 that extends into the cavity 10.

[0190] When the ion sensor unit 410 is disposed on the connector 227, it can be disposed on the ion migration path formed inside the connector 227 between the ion source 210 and the cavity 10. Furthermore, the ion sensor unit 410 can be disposed on the through-hole embedding structure 228a of the connector 227, which extends toward the interior of the cavity 10.

[0191] An embodiment of the ion sensor unit 410 may include: a sensing unit 411, which is disposed on the migration path of ions generated by the ion source 210 and directly senses the ions generated by the ion source 210 in real time; a controller 415, which is used to represent the ions sensed by the sensing unit 411; a cable 416, which is used to connect the controller 415 and the sensing unit 411; and a power unit 417, which supplies power to the controller 415.

[0192] The controller 415 can numerically represent the amount of charge sensed by the sensor 411, and can display in real time whether ionization has occurred via LEDs. Light green indicates normal operation, red indicates insufficient power, and blue indicates excessive power.

[0193] The controller 415 may include an algorithm that outputs a warning message when the charge exceeds or falls below a preset threshold. The threshold can be set according to the management level, which may be divided into warning, emergency stop, etc. In the event of an emergency stop, the controller can immediately shut down the source electrode power relay to block the discharge circuit.

[0194] The controller 415 may include a memory unit for periodically storing detected potential data.

[0195] The controller 415 can be linked to a display module that represents the amount of charge through at least one of graphs and color images. In one example, the controller 415 can utilize a GPU-accelerated library to generate heat maps at regular intervals. The sensing unit 411 can correct for position, generate, and output data.

[0196] The controller 415 may include a control interface that, based on the detection results, feeds back and adjusts the amount of voltage transmitted by the source electrode 211. That is, the controller 415 can transmit a voltage correction value to the source electrode power supply device and transmit this feedback at regular intervals.

[0197] The sensing part 411 can be cylindrical. However, it is not limited to this and the shape of the sensing part 411 can be various. However, it is preferable that the flow direction of the ions formed by the ion source 210 is not obstructed.

[0198] The sensing element 411 may include one or more holes formed toward the ion flow direction inside the connector 227. For example... Figure 11 and Figure 12 As shown, although a single hole is formed on the sensing unit 411, it is not limited to this and may include multiple holes.

[0199] The sensing part 411 may be formed with one or more holes so as to expand the surface area for forming artificial charges without obstructing the flow of ions formed by the ion source 210.

[0200] The sensing unit 411 can be connected to the controller 415 via the cable connector 414, which is connected to the cable 416, and is also connected to the insulating part. The sensing unit 411 is insulated by the insulating part, blocking electrical current from the connector 227, etc., and can directly sense ions generated by the ion source 210. Furthermore, the sensing unit 411 can be stably coupled to the connector 227 via the ion sensor coupling part.

[0201] Furthermore, the sensing unit 411 is disposed on the migration path of the ions generated by the ion source 210, and senses the ions generated by the ion source 210 in real time. The ion source 210 is used to generate ions that eliminate static electricity.

[0202] The sensing unit 411 can be disposed in the coupling part where the ion source 210 and the cavity 10 are combined, on the ion migration path formed between the ion source 210 and the cavity 10.

[0203] Furthermore, the sensing unit 411 can be disposed in the coupling part where the ion source 210 and the cavity 10 are combined, on the ion migration path formed in the direction toward the interior of the cavity 10.

[0204] The sensor unit 411 is positioned on the migration path of ions and can directly sense ions. The degree of sensing varies depending on the degree of protrusion on the internal path of ion migration. Specifically, when the sensor unit 411 has a large protrusion on the internal path of ion migration, the degree of ion sensing increases; when the sensor unit 411 has a small protrusion on the internal path of ion migration, the degree of ion sensing decreases.

[0205] More specifically, when applying a cylindrical sensing unit to perform a sensing quantity detection experiment on the sensing unit described in the first embodiment and the sensing unit described in the second embodiment, if all other conditions are the same except for the location of the sensing unit, and if the outermost edge of the internal path of ion migration is taken as the reference, and the sensing unit described in the second embodiment protrudes twice as much in the direction of the internal path compared to the sensing unit described in the first embodiment, the sensing quantity of the sensing unit described in the second embodiment is increased by 3 to 5 times compared to the sensing quantity of the sensing unit described in the first embodiment.

[0206] The sensing unit 411 is bolted to the connector 227 via an ion sensor coupling portion formed through one side of the connector 227. This bolted connection allows for flexible configuration of the sensing unit 411's orientation and position. Specifically, the sensing unit 411 is positioned inside the connector 227 to ensure that the flow of ions generated by the ion source 210 is not obstructed. The bolted connection between the connector 227 and the sensing unit 411 allows for configuration that prevents obstruction of ion flow. In other words, the bolted connection ensures that the sensing unit 411 and the connector 227 are not hindered by ions.

[0207] Furthermore, the sensing unit 411 can be aligned with the surrounding plate connecting structure 228d disposed on one side of the first connecting structure 228 of the connector 227. The ion flow generated by the ion source 210 flows into the interior of the connector 227, but when protrusions are formed inside the connector 227 in various directions, this flow is impeded. Therefore, the sensing unit 411 and the surrounding plate connecting structure 228d can be aligned to make the protrusions formed inside the connector 227 unidirectional.

[0208] The voltage supplied to the anode 310 can be a pulse with a specific period. This pulse voltage can be formed based on the pulse signal transmitted to the source electrode 211.

[0209] When generating a pulse signal, at least one of the following can be adjusted based on the ion concentration inside the cavity 10: the pulse introduction time, the pulse frequency, and the pulse duty cycle. The ion concentration inside the cavity 10 can be detected by an ion concentration detection unit positioned towards the interior space of the cavity 10.

[0210] The pulse entry time point means the time point at which the pulse signal is generated and the pulsed voltage is formed. The pulse frequency means the number of times the pulse repeats per second. The pulse duty cycle means the ratio of the voltage entry time in the entire cycle.

[0211] When the ion concentration inside cavity 10 is low, a pulse can be introduced, or the pulse frequency can be increased, or the pulse duty cycle can be increased, depending on the existing pulse introduction. Conversely, when the ion concentration inside cavity 10 is high, the pulse introduction can be stopped, or the pulse frequency can be decreased, or the pulse duty cycle can be decreased, depending on the existing pulse introduction.

[0212] This pulse signal can be controlled by a control device located outside the cavity 10.

[0213] The ion concentration at a single point in the internal space of the cavity 10 can be detected by an ion concentration detection unit configured inside the cavity 10. Based on the detected ion concentration, the voltage level delivered from the source electrode 211 to the anode 310 is adjusted to control the amount of ions generated by the ion forming apparatus 200.

[0214] Specifically, when the detected ion concentration is below the standard concentration, the voltage level delivered from the source electrode 211 to the anode 310 can be increased to increase the ion generation. That is, when the concentration of ions formed in the internal space of the cavity 10 is below the standard concentration, it is difficult to completely remove the static electricity present in the target object 1. Therefore, the voltage level delivered from the source electrode 211 to the anode 310 can be increased to increase the ion generation, thereby increasing the concentration of ions generated in the internal space of the cavity 10 and effectively removing the static electricity present in the target object 1.

[0215] Furthermore, when the detected ion concentration exceeds the standard concentration instead of falling below it, the voltage level delivered from the source electrode 211 to the anode 310 can be restored to its initial value, thereby restoring or reducing the amount of ions generated. That is, when the concentration of ions formed inside the cavity 10 exceeds the standard concentration, it can be considered sufficient to remove the static electricity present in the target object 1. Therefore, the voltage level delivered from the source electrode 211 to the anode 310 is initialized to restore or reduce the amount of ions generated, thereby lowering the concentration of ions generated inside the cavity 10, preventing damage to the target object 1, and reducing power consumption.

[0216] In the foregoing, unless specifically stated otherwise, terms such as "comprising," "constituting," or "having" imply the inclusion of the component and should therefore be interpreted as not excluding other components but further including them. Unless otherwise defined, all terms including technical or scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should be interpreted that commonly used terms, such as those defined in dictionaries, have the same meaning as those describing the texture of the related art and should not be interpreted as having an idealized or overly formal meaning unless explicitly defined in this invention.

[0217] The foregoing description merely illustrates the technical concept of the present invention. Those skilled in the art can make various modifications and variations without departing from the essential characteristics of the invention. Therefore, the embodiments disclosed herein are not intended to limit the technical concept of the invention, but rather to describe it. The scope of the technical concept of the invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted in accordance with the appended claims, and it should be understood that all technical concepts within the same scope are included within the scope of the claims of this invention.

Claims

1. A charge-quantity measuring ion sensor, comprising: The sensing unit is configured on the migration path of the ions generated by the ion source to sense the ions generated by the ion source in real time. The ion source is used to generate ions that eliminate static electricity. A controller for displaying the ions sensed by the sensor; Cables for connecting the controller and the sensing unit; and The power department supplies power to the controller.

2. The charge measurement ion sensor according to claim 1, characterized in that: The sensing element may include one or more holes formed in the same direction as the migration path of the ions.

3. The charge measurement ion sensor according to claim 1, characterized in that: The controller can numerically represent the ion sensing quantity when the sensor detects ions, and display whether ions have occurred in real time via LED lights.

4. An ion forming apparatus including a charge measurement ion sensor section, characterized in that: include: An ion source has an output section connected to a cavity through a through hole. Using the voltage delivered from the source electrode to the anode of the output section, ions are generated between the anode and cathode, causing ions to form in the internal space of the cavity. as well as An ion sensor unit is disposed on the migration path of ions generated by the ion source to sense ions generated by the ion source in real time.

5. The ion forming apparatus including a charge measurement ion sensor section according to claim 4, characterized in that: The ion sensor is disposed in the coupling part where the ion source and the cavity are combined, on the ion migration path formed between the ion source and the cavity.

6. The ion forming apparatus including a charge measurement ion sensor section according to claim 4, characterized in that: The ion sensor is disposed in the coupling part where the ion source and the cavity are combined, on the ion migration path formed in the direction towards the interior of the cavity.

7. An ion forming apparatus including a charge measurement ion sensor section, characterized in that: include: A connector for connecting the cavity to the device to prevent the flow of external fluid; An ion source has an output section connected to a cavity through a through hole. Using the voltage delivered from the source electrode to the anode of the output section, ions are generated between the anode and cathode, causing ions to form in the internal space of the cavity. as well as An ion sensor unit is integrally disposed on one side of the interior of the connector to sense ions generated by the ion source in real time.

8. The ion forming apparatus including a charge measurement ion sensor section according to claim 7, characterized in that: The connector includes: a first connecting structure that engages with a through hole formed at one end of a vacuum cavity; and a second connecting structure that engages with a device having a cross-sectional area different from that of the through hole.

9. The ion forming apparatus including a charge measurement ion sensor section according to claim 7, characterized in that: The sensing unit is arranged toward the interior of the connector.

10. The ion source including a charge measurement ion sensor unit according to claim 7, characterized in that: The sensing unit is connected to the connector by bolts through an ion sensor coupling portion formed through one side of the connector.

11. The ion source including a charge measurement ion sensor unit according to claim 7, characterized in that: The sensing unit is on the same line as the enclosure connecting structure disposed on one side of the first connecting structure of the connector.

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