Method for depositing a metal conductive layer on a glass substrate

Abstract

The present application is a method for depositing a metal conductive layer on a glass substrate, comprising the following steps: cleaning a glass substrate and forming a titanium metal thin film on the surface of the glass substrate. The titanium metal thin film is surface treated by a reaction plasma to become an intermediate layer, wherein the reaction plasma includes an oxygen plasma, a nitrogen plasma, a fluorine plasma or a chlorine plasma, and the intermediate layer includes a titanium oxide thin film, a titanium nitride thin film, a titanium fluoride thin film or a titanium chloride thin film. A titanium metal conductive layer is formed on the intermediate layer of the glass substrate. The titanium metal conductive layer is connected to the glass substrate through the intermediate layer, which can increase the adhesion between the titanium metal conductive layer and the glass substrate, and is conducive to improving the yield and reliability of subsequent packaging processes.

Description

Technical Field

[0001] This invention relates to a method for depositing a metallic conductive layer on a glass substrate, which can increase the adhesion between the titanium metallic conductive layer and the glass substrate, and is beneficial to improving the yield and reliability of subsequent packaging processes. Background Technology

[0002] Semiconductor packaging typically refers to placing tiny and fragile semiconductor dies on a packaging substrate and enclosing the dies and substrate with a packaging shell. The dies can be connected to external circuits through the packaging substrate to perform their functions.

[0003] Specifically, the packaging substrate is mainly used to support and protect the chip, preventing damage during transportation and use. The conductive layer on the packaging substrate connects the chip's electrodes to external circuitry, enabling electrical signal transmission between the chip and the external circuitry. Furthermore, the packaging substrate also transfers heat generated during chip operation to the outside, preventing overheating.

[0004] Traditionally, organic materials are commonly used to make packaging substrates, which have the advantages of low cost and ease of manufacturing. Compared with substrates made of organic materials, glass substrates play an increasingly important role in the semiconductor packaging field due to their superior properties, such as high heat resistance, high flatness, low coefficient of thermal expansion, high transparency, low dielectric constant, and high mechanical strength. They are also suitable for applications such as 5G communications, high-performance computing chips, and electric vehicles.

[0005] However, glass substrates also have drawbacks such as high cost, high processing difficulty, and poor adhesion to metals. Taking the deposition of a titanium conductive layer on the surface of a glass substrate as an example, the adhesion between the titanium conductive layer and the glass substrate is only about 0.05 kgf, which may cause the titanium conductive layer to detach from the surface of the glass substrate, thereby affecting the yield and reliability of subsequent packaging processes. Summary of the Invention

[0006] To address the problems described in the prior art, this invention proposes a method for depositing a metal conductive layer on a glass substrate, which can increase the adhesion between the metal conductive layer and the glass substrate, and is beneficial to improving the yield and reliability of subsequent packaging processes.

[0007] One objective of this invention is to provide a method for depositing a metallic conductive layer on a glass substrate. This method primarily involves forming an interlayer on the surface of the glass substrate, and then forming a titanium conductive layer on the interlayer. By using the interlayer, the adhesion between the titanium conductive layer and the glass substrate can be improved, and the probability of separation between the titanium conductive layer and the glass substrate can be reduced.

[0008] One objective of this invention is to provide a method for depositing a metal conductive layer on a glass substrate, which mainly involves forming a titanium metal thin film on the surface of the glass substrate and performing surface treatment on the titanium metal thin film using a reactive plasma to form an intermediate layer, thereby facilitating the placement of the titanium metal conductive layer on the glass substrate.

[0009] One objective of this invention is to provide a method for depositing a metallic conductive layer on a glass substrate. The method mainly involves delivering a reactive gas into a deposition chamber during the deposition of titanium on the surface of the glass substrate to form an intermediary layer on the glass substrate. The titanium metallic conductive layer can then be disposed on the intermediary layer to improve the adhesion between the titanium metallic conductive layer and the glass substrate.

[0010] To achieve the above objectives, the present invention provides a method for depositing a metal conductive layer on a glass substrate, comprising: cleaning a glass substrate; depositing a titanium metal thin film on the surface of the glass substrate; performing surface treatment on the titanium metal thin film on the surface of the glass substrate by a reactive plasma, such that the titanium metal thin film forms an intermediate layer, wherein the reactive plasma includes oxygen plasma, nitrogen plasma, fluorine plasma or chlorine plasma, and the intermediate layer includes titanium oxide film, titanium nitride film, titanium fluoride film or titanium chloride film; and depositing a titanium metal conductive layer on the surface of the intermediate layer.

[0011] This invention proposes another method for depositing a metal conductive layer on a glass substrate, comprising: cleaning a glass substrate; conveying the glass substrate to a deposition chamber; introducing a reactive gas into the deposition chamber and depositing a thin film on the glass substrate to form an intermediate layer on the surface of the glass substrate, wherein the reactive gas includes oxygen, nitrogen, fluorine or chlorine, and the intermediate layer includes a titanium oxide film, a titanium nitride film, a titanium fluoride film or a titanium chloride film; and depositing a titanium metal conductive layer on the surface of the intermediate layer.

[0012] In one embodiment of the method for depositing a metal conductive layer on a glass substrate, the method includes the following steps: depositing a copper metal conductive layer on the surface of a titanium metal conductive layer.

[0013] In one embodiment of the method for depositing a metal conductive layer on a glass substrate, the glass substrate includes at least one through hole, and the inner surface of the through hole has an interlayer, a titanium metal conductive layer and a copper metal conductive layer.

[0014] In one embodiment of the method for depositing a metal conductive layer on a glass substrate, the step of cleaning the glass substrate includes: performing wet cleaning on the glass substrate to remove grease or other organic contaminants from the surface of the glass substrate; and heating the glass substrate to remove moisture from the glass substrate.

[0015] In one embodiment of the method for depositing a metal conductive layer on a glass substrate, a titanium metal thin film, an interlayer, and a titanium metal conductive layer are formed on the glass substrate in a chemical vapor deposition chamber, a physical vapor deposition chamber, or an atomic layer deposition chamber.

[0016] In one embodiment of the method for depositing a metal conductive layer on a glass substrate, the method includes the following steps: introducing an inert gas and a reactive gas into a deposition chamber.

[0017] In one embodiment of the method for depositing a metal conductive layer on a glass substrate, the deposition chamber includes a chemical vapor deposition chamber, a physical vapor deposition chamber, or an atomic layer deposition chamber.

[0018] The method for depositing a metal conductive layer on a glass substrate as described in this invention has the following advantages: it can improve the adhesion between the titanium metal conductive layer and the glass substrate, and is beneficial to improving the yield and reliability of subsequent packaging processes. Attached Figure Description

[0019] Figure 1 This is a flowchart illustrating the steps of an embodiment of the method for depositing a metal conductive layer on a glass substrate according to the present invention.

[0020] Figure 2 This is a schematic diagram of the structure of a glass substrate with a titanium metal thin film provided in an embodiment of the present invention.

[0021] Figure 3 This is a schematic diagram of the structure of a glass substrate having a titanium metal conductive layer according to an embodiment of the present invention.

[0022] Figure 4 This is a flowchart illustrating the steps of another embodiment of the method for depositing a metal conductive layer on a glass substrate according to the present invention.

[0023] Figure 5 This is a schematic diagram of the structure of a deposition cavity for forming a titanium metal conductive layer on a glass substrate according to an embodiment of the present invention.

[0024] Explanation of reference numerals in the attached figures 21: Glass substrate; 211: Perforation; 22: Titanium metal thin film; 23: Intermediary layer; 25: Titanium metal conductive layer; 27: Copper conductive layer; 40: Deposition cavity. Detailed Implementation

[0025] Figure 1 This is a flowchart illustrating the steps of an embodiment of the method for depositing a metallic conductive layer on a glass substrate according to the present invention. Please refer to the accompanying documentation. Figure 2Clean the glass substrate 21 as shown in step 11.

[0026] In one embodiment of the present invention, the glass substrate 21 may include silicon dioxide, aluminosilicate, alkali-aluminosilicate, borosilicate, alkali-borosilicate, aluminoborosilicate, alkali-aluminoborosilicate, soda-lime, etc. For example, the glass substrate 21 may contain 70% or 75% or more silicon dioxide, and the thickness of the glass substrate 21 may be less than or equal to 3 mm.

[0027] In practical applications, the glass substrate 21 can be wet-cleaned first, for example, by using acetone to clean the glass substrate 21 to remove grease or other organic contaminants from the surface of the glass substrate. Then, the glass substrate 21 can be cleaned with methanol to dissolve the acetone residue on the surface of the glass substrate 21. Finally, the glass substrate 21 can be cleaned with deionized water to remove the organic solvent residue on the surface of the glass substrate 21.

[0028] The above-described method for cleaning the glass substrate 21, and the use of acetone and methanol to clean the glass substrate 21, is merely one embodiment of the present invention and is not a limitation of the scope of the present invention. In different embodiments, other organic solvents may also be used to clean the glass substrate 21.

[0029] After wet cleaning of the glass substrate 21 is completed, the glass substrate 21 can be further heated to remove moisture from it. In practical applications, before heating the glass substrate 21, most of the moisture on its surface can be removed using a high-pressure nitrogen gun.

[0030] In one embodiment of the present invention, the glass substrate 21 can be transported to, for example... Figure 5 The glass substrate 21 is heated and baked in the deposition chamber 40 as shown by the heating device of the deposition chamber 40 to remove moisture from the glass substrate 21.

[0031] Please refer to the following: Figure 2 After cleaning the glass substrate 21, a titanium metal thin film 22 is deposited on the surface of the cleaned glass substrate 21, as shown in step 13.

[0032] In one embodiment of the present invention, a glass substrate 21 can be transported into a physical vapor deposition chamber, and a titanium metal thin film 22 can be deposited on the surface of the glass substrate 21 by sputtering or evaporation. In different embodiments, the glass substrate 21 can be transported into a chemical vapor deposition chamber, and a gaseous compound containing titanium can be transported into the chemical vapor deposition chamber, causing the gaseous compound of titanium to decompose or react at high temperature to generate titanium atoms or titanium molecules, thereby depositing a titanium metal thin film 22 on the surface of the glass substrate 21. Alternatively, the glass substrate 21 can be transported into an atomic layer deposition chamber, and a titanium precursor can be transported into the atomic layer deposition chamber to react with the glass substrate 21. For example, titanium tetrachloride can be introduced into the atomic layer deposition chamber, and then a co-reactant, such as water or oxygen, can be introduced into the atomic layer deposition chamber to react with the titanium precursor on the surface of the glass substrate 21, thereby forming a titanium metal thin film 22 on the surface of the glass substrate 21.

[0033] The above-described deposition method is merely one embodiment of the present invention and is not intended to limit the scope of the invention. Each method—physical vapor deposition chamber, chemical vapor deposition chamber, and atomic layer deposition chamber—has its own advantages and disadvantages in forming a titanium metal thin film 22 on the surface of the glass substrate 21. Appropriate deposition equipment can be selected based on the shape and structure of the glass substrate 21, the required process quality, and the manufacturing cost.

[0034] In practical applications, the glass substrate 21 may include multiple perforations 211, wherein a titanium metal thin film 22 may be disposed on the surface of the glass substrate 21 and the inner surface of the perforations 211.

[0035] Please refer to the following: Figure 3 The titanium metal film 22 disposed on the surface of the glass substrate 21 is surface treated by reactive plasma to form an intermediate layer 23, as shown in step 15. The reactive plasma includes oxygen plasma, nitrogen plasma, fluorine plasma or chlorine plasma, and the intermediate layer 23 can be located on the surface of the glass substrate 21 and the inner surface of the perforation 211.

[0036] In one embodiment of the present invention, the titanium metal film 22 can be surface-treated by oxygen plasma, wherein the oxygen plasma reacts with the titanium metal film 22 to form an intermediate layer 23 of titanium monoxide film. In different embodiments, the titanium metal film 22 on the surface of the glass substrate 21 can be surface-treated by nitrogen plasma, fluorine plasma, or chloride plasma, wherein the titanium metal film 22 reacts with nitrogen plasma, fluorine plasma, or chloride plasma to form an intermediate layer 23 of titanium nitride film, titanium fluoride film, or titanium chloride film.

[0037] In practical applications, oxygen plasma, nitrogen plasma, fluorine plasma, or chlorine plasma can be generated by a remote plasma source, a capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, or a microwave plasma source.

[0038] Please refer to the following: Figure 3 A titanium conductive layer 25 is deposited on the surface of the interposer 23, as shown in step 17. The titanium conductive layer 25 may be disposed on the interposer 23 located on the surface of the glass substrate 21 and the inner surface of the through hole 211.

[0039] The method of setting the titanium metal conductive layer 25 on the interposer 23 includes physical vapor deposition, chemical vapor deposition and atomic layer deposition. Basically, the method of setting the titanium metal conductive layer 25 can be similar to the method of setting the titanium metal thin film 22 described in step 13.

[0040] Please refer to the following: Figure 3 Finally, a copper conductive layer 27 can be deposited on the surface of the titanium conductive layer 25, as shown in step 19. The copper conductive layer 27 can be located above the surface of the glass substrate 21 and on the inner surface of the through hole 211. For example, the interposer 23, the titanium conductive layer 25, and the copper conductive layer 27 can be used to fill the through hole 211 of the glass substrate 21, and the titanium conductive layer 25 and the copper conductive layer 27 in the through hole 211 will connect with the titanium conductive layer 25 and the copper conductive layer 27 disposed on the surface of the glass substrate 21.

[0041] In one embodiment of the present invention, the thickness of the interposer 23 may be less than that of the titanium conductive layer 25 and / or the copper conductive layer 27. For example, the thickness of the interposer 23 may be between 10 Å and 1000 Å, or between 500 Å and 1000 Å, the thickness of the titanium conductive layer 25 may be between 2000 Å and 2000 Å, and the thickness of the copper conductive layer 27 may be between 2000 Å and 2000 Å.

[0042] Figure 4 This is a flowchart illustrating the steps of another embodiment of the method for depositing a metal conductive layer on a glass substrate according to the present invention. Please refer to the attached diagram. Figure 3 Clean the glass substrate 21 as shown in step 31.

[0043] The method for cleaning glass substrate 21 can be compared with Figure 1 The same applies to step 11. For example, acetone is used to clean the glass substrate 21 to remove grease or other organic contaminants from the surface of the glass substrate, followed by methanol to clean the glass substrate 21 to dissolve the acetone residue on the surface of the glass substrate 21, and finally deionized water is used to clean the glass substrate 21 to remove the organic solvent residue on the surface of the glass substrate 21.

[0044] After wet cleaning of the glass substrate 21 is completed, the glass substrate 21 can be further heated to remove moisture from the glass substrate 21.

[0045] Please refer to the following: Figure 3 and Figure 5 After cleaning the glass substrate 21, the glass substrate 21 can be transported into a deposition chamber 40, as shown in step 33.

[0046] In one embodiment of the present invention, the glass substrate 21 may be first transported to the deposition chamber 40, and then the glass substrate 21 may be heated and baked by the heating device of the deposition chamber 40 to remove moisture from the glass substrate 21. In other words, the cleaning of the glass substrate 21 in step 31 may not include heating the glass substrate 21, and the baking of the glass substrate 21 may be performed after step 33.

[0047] The deposition chamber 40 described in the above embodiments of the present invention may include a physical vapor deposition chamber, a chemical vapor deposition chamber, or an atomic layer deposition chamber.

[0048] Please refer to the following: Figure 3 A reaction gas is delivered to the deposition chamber 40, and a thin film is deposited on the surface of the glass substrate 21 within the deposition chamber 40 to form an intermediary layer 23 on the surface of the glass substrate 21. The reaction gas includes oxygen, nitrogen, fluorine or chlorine, as shown in step 35.

[0049] Taking a physical vapor deposition (PVD) chamber as an example, an inert gas and a reactive gas can be introduced into the PVD chamber. The reactive gas can be oxygen, and the inert gas can be argon. The argon gas in the PVD chamber will form argon ions due to the high-voltage electric field. These argon ions bombard the titanium target at the cathode to generate titanium atoms or molecules. The titanium atoms or molecules will react with the oxygen in the PVD chamber and deposit on the surface of the glass substrate 21 to form an interlayer 23 of a titanium oxide thin film on the surface of the glass substrate 21.

[0050] In different embodiments, the reaction gas can be nitrogen, fluorine or chlorine, and the interlayer 23 formed on the surface of the glass substrate 21 can be a titanium nitride film, a titanium fluoride film or a titanium chloride film.

[0051] The formation of an intermediate layer 23 on the surface of the glass substrate 21 using a physical vapor deposition chamber is merely one embodiment of the present invention and is not a limitation thereof. In different embodiments, the deposition chamber 40 may be a chemical vapor deposition chamber, and gaseous titanium compounds and reactant gases may be transported to the chemical vapor deposition chamber. For example, the gaseous titanium compound may be titanium tetrachloride, which decomposes at high temperature and reacts with the reactant gases to form an intermediate layer 23 on the surface of the glass substrate 21.

[0052] In addition, the deposition chamber 40 can be an atomic layer deposition chamber, and titanium precursors and reactive gases can be sequentially delivered to the atomic layer deposition chamber to form an intermediary layer 23 on the surface of the glass substrate 21.

[0053] In practical applications, the glass substrate 21 may include multiple through holes 211, wherein the intermediary layer 23 may be disposed on the surface of the glass substrate 21 and the inner surface of the through holes 211.

[0054] Please refer to the following: Figure 3 A titanium conductive layer 25 is formed on the surface of the interposer 23, as shown in step 37. The titanium conductive layer 25 may be disposed on the interposer 23 located on the surface of the glass substrate 21 and the inner surface of the through hole 211.

[0055] The method of setting the titanium metal conductive layer 25 on the interposer 23 includes physical vapor deposition, chemical vapor deposition and atomic layer deposition. Basically, the setting method of the titanium metal conductive layer 25 can be the same as the setting method of the titanium metal thin film 22 described in step 13 or the setting method described in step 17.

[0056] Please refer to the following: Figure 3 Finally, a copper conductive layer 27 can be formed on the surface of the titanium conductive layer 25, as shown in step 39. The copper conductive layer 27 can be located above the surface of the glass substrate 21 and on the inner surface of the through hole 211.

[0057] The method for depositing a metal conductive layer on a glass substrate 21 as described in this invention allows for the sequential deposition of an interposer layer 23, a titanium conductive layer 25, and a copper conductive layer 27 within the same deposition chamber 40. The interposer layer 23 increases the adhesion between the titanium conductive layer 25 and the glass substrate 21; for example, the adhesion can be increased from 0.05 kgf as described in the prior art to 0.5 kgf, significantly reducing the probability of the titanium conductive layer 25 detaching from the glass substrate 21 and improving the yield and reliability of subsequent packaging processes.

[0058] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent variations and modifications made in accordance with the shape, structure, features and spirit described in the claims of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A method for depositing a metallic conductive layer on a glass substrate, characterized in that, include: Clean a glass substrate; A titanium metal thin film is deposited on the surface of the glass substrate; A surface treatment is performed on the titanium metal film on the surface of the glass substrate using a reactive plasma, thereby forming an intermediate layer. The reactive plasma includes oxygen plasma, nitrogen plasma, fluorine plasma, or chloride plasma, and the intermediate layer includes a titanium oxide film, a titanium nitride film, a titanium fluoride film, or a titanium chloride film. A titanium conductive layer is deposited on the surface of the intermediate layer.

2. The method for depositing a metal conductive layer on a glass substrate as described in claim 1, characterized in that, Includes the following steps: A copper conductive layer is deposited on the surface of the titanium conductive layer.

3. The method for depositing a metal conductive layer on a glass substrate as described in claim 2, characterized in that, The glass substrate includes at least one through hole, and the inner surface of the through hole has the interlayer, the titanium conductive layer and the copper conductive layer.

4. The method for depositing a metal conductive layer on a glass substrate as described in claim 1, characterized in that, The steps for cleaning the glass substrate include: The glass substrate is wet-cleaned to remove grease or other organic contaminants from its surface; and The glass substrate is heated to remove moisture from it.

5. The method for depositing a metal conductive layer on a glass substrate as described in claim 1, characterized in that, The glass substrate forms the titanium metal thin film, the intermediate layer, and the titanium metal conductive layer in a chemical vapor deposition chamber, a physical vapor deposition chamber, or an atomic layer deposition chamber.

6. A method for depositing a metallic conductive layer on a glass substrate, characterized in that, include: Clean a glass substrate; The glass substrate is transported to a deposition chamber; A reactive gas is introduced into the deposition chamber, and a thin film is deposited on the glass substrate to form an intermediate layer on the surface of the glass substrate. The reactive gas includes oxygen, nitrogen, fluorine, or chlorine, and the intermediate layer includes a titanium oxide film, a titanium nitride film, a titanium fluoride film, or a titanium chloride film. A titanium conductive layer is deposited on the surface of the intermediate layer.

7. The method for depositing a metal conductive layer on a glass substrate as described in claim 6, characterized in that, The process includes the following steps: depositing a copper conductive layer on the surface of the titanium conductive layer.

8. The method for depositing a metal conductive layer on a glass substrate as described in claim 6, characterized in that, The process includes the following steps: introducing an inert gas and the reactant gas into the deposition chamber.

9. The method for depositing a metal conductive layer on a glass substrate as described in claim 6, characterized in that, The steps for cleaning the glass substrate include: The glass substrate is wet-cleaned to remove grease or other organic contaminants from its surface; and The glass substrate is heated to remove moisture from it.

10. The method for depositing a metal conductive layer on a glass substrate as described in claim 6, characterized in that, The deposition chamber includes a chemical vapor deposition chamber, a physical vapor deposition chamber, or an atomic layer deposition chamber.

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