A method of laser heating and grinding of a semiconductor

Abstract

The application discloses a laser heating and grinding method for a semiconductor, which comprises the following steps: heating and treating a semiconductor surface by using a laser; and grinding the semiconductor surface after the laser heating. The technical scheme can effectively reduce thermal damage and defects generated in the process of grinding the semiconductor surface, thereby improving the surface quality and optical performance of the semiconductor.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a laser heating and polishing method for semiconductors. Background Technology

[0002] In semiconductor manufacturing, polishing is one of the main processes for achieving a smooth and flat semiconductor surface. Traditional polishing processes typically use abrasive particles to rub against the semiconductor surface to remove excess material. However, this friction process generates a large amount of heat, leading to thermal damage and defects on the semiconductor surface, affecting the surface quality and optical properties of the semiconductor. Summary of the Invention

[0003] The purpose of this invention is to provide a laser heating polishing method for semiconductors, which can effectively reduce thermal damage and defects generated during the polishing process of semiconductor surfaces, thereby improving the surface quality and optical performance of semiconductors.

[0004] To achieve the above objectives, embodiments of the present invention provide a method for laser-heated polishing of semiconductors, comprising:

[0005] Using lasers to heat the surface of semiconductors;

[0006] After laser heating, the semiconductor surface is ground.

[0007] Furthermore, the wavelength of the laser is 800–1200 nm, and the power density is 0.5–2.0 W / cm². 2 .

[0008] Furthermore, the power density of the laser is 1.0–1.5 W / cm². 2 .

[0009] Furthermore, the heating time is 1 to 5 seconds.

[0010] Furthermore, the heating time is 2 to 4 seconds.

[0011] Furthermore, the grinding pressure is 10-50 kPa and the grinding speed is 10-50 mm / min.

[0012] Furthermore, the grinding pressure is 20–40 kPa.

[0013] Furthermore, the grinding speed is 20-40 mm / min.

[0014] Furthermore, the grinding time is 1 to 10 seconds.

[0015] Furthermore, the grinding time is 2 to 5 seconds.

[0016] Compared with existing technologies, this invention provides a laser-assisted polishing method for semiconductors. First, a laser is used to heat the semiconductor surface; then, after laser heating, the semiconductor surface is polished. This invention employs laser-assisted polishing technology, using a laser to preheat the semiconductor surface before polishing, which effectively reduces thermal damage and defects generated during the semiconductor surface polishing process, thereby improving the surface quality and optical properties of the semiconductor. Attached Figure Description

[0017] Figure 1 This is a flowchart of a preferred embodiment of a laser-heated polishing method for semiconductors provided by the present invention. Detailed Implementation

[0018] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0019] This invention provides a method for laser-heated polishing of semiconductors, see [link to relevant documentation]. Figure 1 The diagram shown is a flowchart of a preferred embodiment of a laser-heated polishing method for semiconductors provided by the present invention, the method comprising steps S11 to S12:

[0020] Step S11: Heat the semiconductor surface using a laser;

[0021] Step S12: After laser heating, the semiconductor surface is ground.

[0022] In practice, the semiconductor surface is first heated by a laser; then, after the laser heating is completed, the semiconductor surface is ground.

[0023] It should be noted that when performing polishing on the semiconductor surface in the embodiments of the present invention, existing polishing processes can be used. The embodiments of the present invention do not specifically limit the polishing process used.

[0024] In one optional embodiment, the laser has a wavelength of 800–1200 nm and a power density of 0.5–2.0 W / cm². 2 .

[0025] Specifically, in conjunction with the above embodiments, when using a laser to perform laser heating treatment on the semiconductor surface in this embodiment of the invention, the wavelength of the laser used can be 800nm ​​to 1200nm, and the power density can be 0.5W / cm². 2 ~2.0W / cm 2 That is, embodiments of the present invention can use wavelengths of 800nm ​​to 1200nm and power densities of 0.5W / cm². 2 ~2.0W / cm 2 Laser is used to heat the surface of semiconductors.

[0026] For example, the wavelength of the laser can be 810nm, 820nm, 830nm, 840nm, 850nm, 860nm, 870nm, 880nm, 890nm, 900nm, 910nm, 920nm, 930nm, 940nm, 950nm, 960nm, 970nm, 980nm, 990nm, 1000nm, 1010nm, 1020nm, 1030nm, 1040nm, 1050nm, 1060nm, 1070nm, 1080nm, 1090nm, 1100nm, 1110nm, 1120nm, 1130nm, 1140nm, 1150nm, 1160nm, 1170nm, 1180nm, 1190nm, or 2000nm, and can also be set according to actual needs. This embodiment of the invention does not impose specific limitations.

[0027] For example, the power density of the laser can be 0.5 W / cm². 2 0.6W / cm 2 0.7W / cm 2 0.8W / cm 2 0.9W / cm 2 1.0W / cm 2 1.1W / cm 2 1.2W / cm 2 1.3W / cm 2 1.4W / cm 2 1.5W / cm 2 1.6W / cm 2 1.7W / cm 2 1.8W / cm 2 1.9W / cm 2 Or 2.0W / cm 2 The settings can also be configured according to actual needs, and the embodiments of the present invention do not impose specific limitations.

[0028] In one optional embodiment, the power density of the laser is 1.0–1.5 W / cm². 2 .

[0029] Specifically, in conjunction with the above embodiments, when using a laser to perform laser heating treatment on the semiconductor surface in this embodiment of the invention, the power density of the laser used can be 0.5 W / cm². 2 ~2.0W / cm 2 The preferred value is 1.0 W / cm. 2 ~1.5W / cm 2 That is, embodiments of the present invention can use wavelengths of 800nm ​​to 1200nm and power densities of 1.0W / cm². 2 ~1.5W / cm 2 Laser is used to heat the surface of semiconductors.

[0030] In one optional embodiment, the heating time is 1 to 5 seconds.

[0031] Specifically, in conjunction with the above embodiments, when using a laser to perform laser heating treatment on the semiconductor surface in this embodiment of the invention, the heating time can be 1 second to 5 seconds, that is, this embodiment of the invention can use a wavelength of 800nm ​​to 1200nm and a power density of 0.5W / cm². 2 ~2.0W / cm 2 The laser heats the semiconductor surface for 1 to 5 seconds.

[0032] For example, the heating time of laser heating can be 1 second, 2 seconds, 3 seconds, 4 seconds or 5 seconds, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0033] In one optional embodiment, the heating time is 2 to 4 seconds.

[0034] Specifically, in conjunction with the above embodiments, when using a laser to heat the semiconductor surface in this embodiment of the invention, the heating time can be 1 second to 5 seconds, preferably 2 seconds to 4 seconds. That is, this embodiment of the invention can use a wavelength of 800nm ​​to 1200nm and a power density of 1.0W / cm². 2 ~1.5W / cm 2 The laser heats the semiconductor surface for 2 to 4 seconds.

[0035] In one optional embodiment, the grinding pressure is 10-50 kPa and the grinding speed is 10-50 mm / min.

[0036] Specifically, in conjunction with the above embodiments, when grinding the semiconductor surface, the grinding pressure can be 10 kPa to 50 kPa and the grinding speed can be 10 mm / min to 50 mm / min. That is, the semiconductor surface can be ground with a grinding pressure of 10 kPa to 50 kPa and a grinding speed of 10 mm / min to 50 mm / min.

[0037] For example, the grinding pressure can be 10 kPa, 11 kPa, 12 kPa, 13 kPa, 14 kPa, 15 kPa, 16 kPa, 17 kPa, 18 kPa, 19 kPa, 20 kPa, 21 kPa, 22 kPa, 23 kPa, 24 kPa, 25 kPa, 26 kPa, 27 kPa, 28 kPa, 29 kPa, 30 kPa, 31 kPa, 32 kPa, 33 kPa, 34 kPa, 35 kPa, 36 kPa, 37 kPa, 38 kPa, 39 kPa, 40 kPa, 41 kPa, 42 kPa, 43 kPa, 44 kPa, 45 kPa, 46 kPa, 47 kPa, 48 kPa, 49 kPa, or 50 kPa, and can also be set according to actual needs. This embodiment of the invention does not impose specific limitations.

[0038] For example, the grinding speed can be 10 mm / min, 11 mm / min, 12 mm / min, 13 mm / min, 14 mm / min, 15 mm / min, 16 mm / min, 17 mm / min, 18 mm / min, 19 mm / min, 20 mm / min, 21 mm / min, 22 mm / min, 23 mm / min, 24 mm / min, 25 mm / min, 26 mm / min, 27 mm / min, 28 mm / min, 29 mm / min, 30 mm / min, 3 The speed can be set to 1 mm / min, 32 mm / min, 33 mm / min, 34 mm / min, 35 mm / min, 36 mm / min, 37 mm / min, 38 mm / min, 39 mm / min, 40 mm / min, 41 mm / min, 42 mm / min, 43 mm / min, 44 mm / min, 45 mm / min, 46 mm / min, 47 mm / min, 48 mm / min, 49 mm / min or 50 mm / min, or can be set according to actual needs. This embodiment of the invention does not impose specific limitations.

[0039] In one optional embodiment, the grinding pressure is 20–40 kPa.

[0040] Specifically, in conjunction with the above embodiments, when grinding the semiconductor surface, the grinding pressure can be 10 kPa to 50 kPa, preferably 20 kPa to 40 kPa. That is, the semiconductor surface can be ground with a grinding pressure of 20 kPa to 40 kPa and a grinding speed of 10 mm / min to 50 mm / min.

[0041] In one optional embodiment, the grinding speed is 20-40 mm / min.

[0042] Specifically, in conjunction with the above embodiments, when grinding the semiconductor surface, the grinding speed can be 10 mm / min to 50 mm / min, preferably 20 mm / min to 40 mm / min. That is, the semiconductor surface can be ground with a grinding pressure of 20 kPa to 40 kPa and a grinding speed of 20 mm / min to 40 mm / min.

[0043] In one optional embodiment, the grinding time is 1 to 10 seconds.

[0044] Specifically, in conjunction with the above embodiments, when grinding the semiconductor surface, the grinding time can be 1 to 10 seconds. That is, the semiconductor surface can be ground for 1 to 10 seconds at a grinding pressure of 10 kPa to 50 kPa and a grinding speed of 10 mm / min to 50 mm / min.

[0045] For example, the grinding time can be 1 second, 2 seconds, 3 seconds, 4 seconds, 5 seconds, 6 seconds, 7 seconds, 8 seconds, 9 seconds or 10 seconds, and can also be set according to actual needs. This embodiment of the invention does not make specific limitations.

[0046] In one optional embodiment, the grinding time is 2 to 5 seconds.

[0047] Specifically, in conjunction with the above embodiments, when grinding the semiconductor surface, the grinding time can be 1 second to 10 seconds, preferably 2 seconds to 5 seconds. That is, the semiconductor surface can be ground for 2 to 5 seconds with a grinding pressure of 20 kPa to 40 kPa and a grinding speed of 20 mm / min to 40 mm / min.

[0048] Based on all the above embodiments, the implementation process of this solution will be described below through the first specific embodiment, including: (1) using a wavelength of 800nm ​​and a power density of 0.5W / cm². 2(1) The semiconductor surface is subjected to laser heating treatment by laser for 5 seconds; (2) After the laser heating treatment is completed, the semiconductor surface is immediately subjected to grinding treatment with a grinding pressure of 10 kPa and a grinding speed of 10 mm / min, and the grinding duration is 10 seconds.

[0049] Based on all the above embodiments, the implementation process of this solution will be described below through a second specific embodiment, including: (1) using a wavelength of 1000nm and a power density of 1.5W / cm². 2 (1) The laser heats the semiconductor surface for 2 seconds; (2) After the laser heat treatment is completed, the semiconductor surface is immediately ground with a grinding pressure of 40 kPa and a grinding speed of 40 mm / min for 5 seconds.

[0050] Based on all the above embodiments, the implementation process of this solution will be described below through a third specific embodiment, including: (1) using a wavelength of 1200nm and a power density of 2.0W / cm². 2 (1) The semiconductor surface is subjected to laser heating treatment by laser, and the heating time is 1 second; (2) After the laser heating treatment is completed, the semiconductor surface is immediately subjected to grinding treatment with a grinding pressure of 50 kPa and a grinding speed of 50 mm / min, and the grinding time is 1 second.

[0051] For example, a wavelength of 1064 nm and a power density of 1.2 W / cm² are used. 2 A laser is used to heat the semiconductor surface for 3 seconds. Immediately after laser heating, the semiconductor surface is ground at a pressure of 30 kPa and a speed of 30 mm / min. Experimental tests show that the surface roughness of the semiconductor surface ground using this embodiment of the invention is reduced by 20%, and the defect density is reduced by 30%.

[0052] In summary, the laser-heated polishing method for semiconductors provided by this invention employs laser-assisted polishing technology. It utilizes a laser to preheat the semiconductor surface, which softens the material and reduces polishing resistance before polishing. This effectively reduces thermal damage and defects generated during semiconductor surface polishing, thereby improving the surface quality and optical performance of the semiconductor. Furthermore, it shortens processing time, thus increasing polishing efficiency. In addition, this invention is simple to operate and easy to implement.

[0053] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for laser-heated grinding of semiconductors, characterized in that, include: Using lasers to heat the surface of semiconductors; After laser heating, the semiconductor surface is ground.

2. The laser heating and polishing method for semiconductors as described in claim 1, characterized in that, The laser has a wavelength of 800–1200 nm and a power density of 0.5–2.0 W / cm². 2 .

3. The laser heating and polishing method for semiconductors as described in claim 2, characterized in that, The power density of the laser is 1.0–1.5 W / cm². 2 .

4. The laser heating and polishing method for semiconductors as described in claim 1, characterized in that, The heating time is 1 to 5 seconds.

5. The laser-heated polishing method for semiconductors as described in claim 4, characterized in that, The heating time is 2 to 4 seconds.

6. The laser heating and polishing method for semiconductors as described in claim 1, characterized in that, The grinding pressure is 10-50 kPa and the grinding speed is 10-50 mm / min.

7. The laser heating and polishing method for semiconductors as described in claim 6, characterized in that, The grinding pressure is 20-40 kPa.

8. The laser heating and polishing method for semiconductors as described in claim 6, characterized in that, The grinding speed is 20-40 mm / min.

9. The laser heating and polishing method for semiconductors as described in claim 1, characterized in that, The grinding time is 1 to 10 seconds.

10. The laser heating and polishing method for semiconductors as described in claim 9, characterized in that, The grinding time is 2 to 5 seconds.

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