Light emitting diode packaging structure
By using a fluorescent part composed of a centrifugal precipitation layer with a high fluorescent powder concentration and a light-transmitting layer with a low fluorescent powder concentration in the light emitting diode package structure, combined with the anti-sulfurization layer to block sulfur-containing substances, the problems of low light output efficiency and discoloration of the conductive layer in the prior art are solved, and a higher light output efficiency is achieved.
Patent Information
- Application Number
- CN202323424704.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-14
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2033-12-14
AI Technical Summary
The light output efficiency of the existing light emitting diode packaging structure is low, mainly due to the repeated absorption and release of phosphors, and the discoloration caused by sulfur-containing substances invading the conductive layer, affecting the light output efficiency.
A package structure including a bracket, a light emitting diode chip, a vulcanization layer and a fluorescent part is adopted. The fluorescent part consists of a first fluorescent layer and an optional second fluorescent layer. The phosphor concentration of the first fluorescent layer is higher than that of the light-transmitting layer to prevent light loss; the vulcanized layer prevents sulfur-containing substance from invading the conductive layer and prevents discoloration.
By reducing the repeated absorption and release of the phosphor, the light transfer efficiency of the light emitting diode chip is improved, and by preventing the conductive layer from discoloring, the light output efficiency of the light emitting diode packaging structure is significantly improved.
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Figure CN222639012U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of light emitting diode packaging, and in particular to a light emitting diode packaging structure. Background Art
[0002] Light-emitting diode chips, such as LED chips, are widely used in various indication, display, decoration, backlight, general lighting and city night scene fields due to their advantages such as long service life, low power consumption, small size, high reliability and good environmental protection.
[0003] like Figure 1 As shown, the existing LED packaging structure 1 generally includes a bracket 2, a LED chip 3 and a fluorescent layer 4. The bracket 2 is provided with a mounting groove 5, a conductive layer (not shown) is provided at the bottom of the mounting groove 5, the LED chip 3 is provided in the mounting groove 5 and electrically connected to the conductive layer, and the fluorescent layer 4 is provided in the mounting groove 5 and covers the LED chip 3, so that the light emitted by the LED chip 3 is converted into white light or various light colors after passing through the fluorescent layer 4.
[0004] Among them, Figure 1 As shown, the existing LED package structure 1 has at least two defects that affect the light extraction efficiency. First, the light emitted by the LED chip 3 may be repeatedly absorbed and released by the phosphors dispersed in various places of the fluorescent layer 4, which will cause the light to be gradually lost in the process, making it difficult for the LED package structure 1 to achieve a high light extraction efficiency. Second, sulfur-containing substances can easily invade the conductive layer, which will cause the conductive layer to change color and affect the light extraction efficiency of the LED package structure 1.
[0005] Therefore, how to improve the light extraction efficiency of the light emitting diode packaging structure is still a technical problem that technicians in this field need to solve urgently. Utility Model Content
[0006] In view of this, in order to solve the above technical problems, the present application provides a light emitting diode packaging structure.
[0007] To achieve the above object, the present application provides a light emitting diode packaging structure, the light emitting diode packaging structure comprising:
[0008] The bracket is provided with a mounting groove, and a conductive layer is provided at the bottom of the mounting groove;
[0009] A light emitting diode chip is disposed in the mounting groove and electrically connected to the conductive layer;
[0010] An anti-sulfurization layer is disposed in the mounting groove and covers the conductive layer;
[0011] and a fluorescent part, which is arranged in the mounting groove and covers the anti-sulfurization layer and the light-emitting diode chip, and the fluorescent part includes a colloid matrix and fluorescent powder;
[0012] The fluorescent part at least includes a first fluorescent layer, a centrifugal precipitation layer is formed at the bottom of the first fluorescent layer, and a light-transmitting layer is formed on the top of the first fluorescent layer; the fluorescent powder concentration of the centrifugal precipitation layer is higher than that of the light-transmitting layer.
[0013] Optionally, the light emitting diode packaging structure includes a second fluorescent layer, which is layered with the first fluorescent layer; the fluorescent powder of the second fluorescent layer is dispersed in the second fluorescent layer;
[0014] The first fluorescent layer is formed as a lower fluorescent layer, and the second fluorescent layer is formed as an upper fluorescent layer; or the second fluorescent layer is formed as a lower fluorescent layer, and the first fluorescent layer is formed as an upper fluorescent layer;
[0015] Among them, the lower fluorescent layer covers the anti-sulfurization layer and surrounds the side wall of the light-emitting diode chip, is arranged between the side wall of the light-emitting diode chip and the side wall of the mounting groove, and is used to excite the first color light; the upper fluorescent layer covers the lower fluorescent layer and the light-emitting diode chip, and is used to excite the second color light different from the first color light.
[0016] Optionally, at least one of the plurality of first fluorescent layers arranged in layers is formed as a lower fluorescent layer, and at least another one is formed as an upper fluorescent layer;
[0017] Among them, the lower fluorescent layer covers the anti-sulfurization layer and surrounds the side wall of the light-emitting diode chip, is arranged between the side wall of the light-emitting diode chip and the side wall of the mounting groove, and is used to excite the first color light; the upper fluorescent layer covers the lower fluorescent layer and the light-emitting diode chip, and is used to excite the second color light.
[0018] Optionally, the first color light is different from the second color light, the first color light is at least one of red light, green light or yellow-green light, and the second color light is at least one of red light, green light or yellow-green light.
[0019] Optionally, the wavelength of the first color light is 600nm-660nm, and the wavelength of the second color light is 500nm-620nm; or the wavelength of the first color light is 500nm-620nm, and the wavelength of the second color light is 600nm-660nm.
[0020] Optionally, the light emitting diode chip is exposed outside the anti-sulfurization layer.
[0021] Optionally, the thickness of the anti-sulfurization layer is 0.03um to 10um.
[0022] Optionally, the bracket includes a lead frame and a reflective cup, the reflective cup is arranged on the lead frame and forms a mounting groove with the lead frame, and the conductive layer is arranged on the lead frame and at least partially exposed in the mounting groove.
[0023] Optionally, the thickness of the centrifugal precipitation layer accounts for no more than 30% of the thickness of the first fluorescent layer, and the content of the fluorescent powder in the centrifugal precipitation layer accounts for no less than 50% of the total content of the fluorescent powder in the first fluorescent layer.
[0024] Optionally, the light emitting diode chip is an LED chip.
[0025] Beneficial effects: Different from the prior art, the present application can improve the light extraction efficiency in at least two aspects. On the one hand, since a large amount of phosphor in the first phosphor layer is precipitated in the centrifugal precipitation layer at the bottom of the first phosphor layer, a light-transmitting layer with a lower phosphor concentration is formed on the top of the first phosphor layer. This can reduce the loss of light emitted by the LED chip due to repeated absorption and release of phosphor, thereby improving the light extraction efficiency of the LED packaging structure. On the other hand, the anti-sulfurization layer can prevent sulfur-containing substances from invading the conductive layer, thereby preventing the conductive layer from being sulfurized by sulfur-containing substances and changing color, thereby improving the light extraction efficiency of the LED packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 It is a schematic diagram of the existing light emitting diode packaging structure of the present application;
[0027] Figure 2 is a schematic diagram of a light emitting diode packaging structure according to a first embodiment of the present application;
[0028] Figure 3 yes Figure 2 A magnified schematic diagram of the middle area A;
[0029] Figures 4 to 9 1 is a schematic diagram of the structures corresponding to each stage in the preparation process of the light emitting diode package structure of the first embodiment of the present application, wherein: Figure 7 yes Figure 6 The enlarged schematic diagram of area B in the middle, Fig. 9 yes Figure 8 A magnified schematic diagram of the middle area C;
[0030] Fig.10 is a schematic diagram of a light emitting diode packaging structure of a second embodiment of the present application;
[0031] Fig.11 yes Fig.10 A magnified schematic diagram of the middle area D;
[0032] Fig.12 is a schematic diagram of a light emitting diode packaging structure of a third embodiment of the present application;
[0033] Fig.13 yes Fig.12 Schematic diagram of the enlarged area E in the middle.
[0034] Description of reference numerals:
[0035] 1-LED packaging structure; 2-bracket; 3-LED chip; 4-fluorescent layer; 5-mounting slot;
[0036] 10, 20, 30-light-emitting diode packaging structure; 100-bracket; 200-light-emitting diode chip; 300-anti-sulfurization layer; 400-fluorescent part; 500-bonding wire; 40-part to be packaged;
[0037] 110-mounting slot; 120-lead frame; 130-reflection bowl;
[0038] 410 - first fluorescent layer; 411 - centrifugal sedimentation layer; 412 - light-transmitting layer; 420 - second fluorescent layer; 430a, 430b, 430c - lower fluorescent layer; 440a, 440b, 440c - upper fluorescent layer. DETAILED DESCRIPTION
[0039] In order to enable those skilled in the art to better understand the technical solution of the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described implementation methods are only part of the implementation methods of the present application, rather than all the implementation methods. Based on the implementation methods in the present application, all other implementation methods obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.
[0040] Embodiment 1
[0041] See also Figure 2-Figure 3 The light-emitting diode package structure 10 of the first embodiment of the present application includes a bracket 100 , a light-emitting diode chip 200 , an anti-sulfurization layer 300 and a fluorescent portion 400 .
[0042] The bracket 100 is provided with a mounting groove 110, and a conductive layer is provided at the bottom of the mounting groove 110. The light-emitting diode chip 200 is provided in the mounting groove 110 and electrically connected to the conductive layer. The anti-sulfurization layer 300 is provided in the mounting groove 110 and covers the conductive layer. The fluorescent part 400 is provided in the mounting groove 110 and covers the anti-sulfurization layer 300 and the light-emitting diode chip 200, and the fluorescent part 400 includes a colloidal matrix (not shown) and a fluorescent powder (not shown). Among them, the fluorescent part 400 includes at least a first fluorescent layer 410, a centrifugal precipitation layer 411 is formed at the bottom of the first fluorescent layer 410, and a light-transmitting layer 412 is formed at the top of the first fluorescent layer 410. The concentration of the fluorescent powder in the centrifugal precipitation layer 411 is higher than the concentration of the fluorescent powder in the light-transmitting layer 412.
[0043] Through the above method, the light extraction efficiency can be improved in at least two aspects. On the one hand, since a large amount of phosphor in the first phosphor layer 410 is precipitated in the centrifugal precipitation layer 411 at the bottom of the first phosphor layer 410, a light-transmitting layer 412 with a lower phosphor concentration is formed on the top of the first phosphor layer 410, which can reduce the loss of light emitted by the LED chip 200 due to repeated absorption and release of phosphor, thereby improving the light extraction efficiency of the LED packaging structure 10. On the other hand, the anti-sulfurization layer 300 can prevent sulfur-containing substances from invading the conductive layer, thereby preventing the conductive layer from being sulfurized by sulfur-containing substances and discoloring, thereby improving the light extraction efficiency of the LED packaging structure 10.
[0044] Optionally, the conductive layer includes but is not limited to a conductive silver layer, so that the conductive silver layer can be prevented from turning yellow or black by the anti-sulfurization layer 300. Thus, the conductive silver layer can maintain a good reflective ability to reflect light to the front side to improve the light extraction efficiency of the light emitting diode package structure 10.
[0045] Optionally, see Figure 2-Figure 3 , the LED chip 200 is exposed outside the anti-sulfurization layer 300. In this way, the anti-sulfurization layer 300 can avoid the front light emitting direction of the LED chip 200, which is not only conducive to improving the light emitting efficiency of the LED package structure 10, but also conducive to thinning the LED package structure 10, forming a LED package structure 10 with a smaller total thickness.
[0046] Alternatively, if Figure 2-Figure 3 As shown, in one example, the anti-sulfurization layer 300 is distributed on the bottom of the installation groove 110; in another example (not shown), the anti-sulfurization layer is continuously distributed on the bottom and side walls of the installation groove.
[0047] Furthermore, if Figure 2-Figure 3 As shown, the light emitting diode package structure 10 includes a second fluorescent layer 420 , and the second fluorescent layer 420 and the first fluorescent layer 410 are layered. The fluorescent powder of the second fluorescent layer 420 is dispersed in the second fluorescent layer 420 .
[0048] The first fluorescent layer 410 is formed as a lower fluorescent layer 430a, and the second fluorescent layer 420 is formed as an upper fluorescent layer 440a. The lower fluorescent layer 430a covers the anti-sulfurization layer 300 and surrounds the side wall of the LED chip 200, and is disposed between the side wall of the LED chip 200 and the side wall of the mounting groove 110, and is used to excite the first color light. The upper fluorescent layer 440a covers the lower fluorescent layer 430a and the LED chip 200, and is used to excite the second color light.
[0049] In the above manner, since the centrifugal sedimentation layer 411 of the lower fluorescent layer 430a is disposed between the side wall of the LED chip 200 and the side wall of the mounting groove 110 along the side wall of the LED chip 200, the light extraction efficiency of the LED is improved in at least two aspects. On the one hand, the centrifugal sedimentation layer 411 of the lower fluorescent layer 430a can avoid the front light emission of the LED chip 200, thereby improving the light extraction efficiency of the LED chip 200. On the other hand, the centrifugal sedimentation layer 411 of the lower fluorescent layer 430a can absorb the side light emission of the LED chip 200 and excite it into the first color light that is at least partially emitted from the front, thereby improving the light extraction efficiency of the LED chip 200.
[0050] It should be noted that the light emitted by the LED chip 200 excites the phosphor of the phosphor part 400, so that the light output by the LED package structure 10 is white light or various light colors. Specifically, the light emitted by the LED chip 200 excites the lower fluorescent layer 430a to emit a first color light, and the light emitted by the LED chip 200 excites the upper fluorescent layer 440a to emit a second color light. The light emitted by the LED chip 200, the first color light, and the second color light are mixed to form white light or various light colors.
[0051] Optionally, the light emitting diode chip 200 includes but is not limited to an LED chip, the light emitted by the chip is blue light, the first color light is different from the second color light, the first color light is at least one of red light, green light or yellow-green light, and the second color light is at least one of red light, green light or yellow-green light.
[0052] Optionally, in one example, the wavelength of the first color light is 600nm-660nm, and the wavelength of the second color light is 500nm-620nm.
[0053] Optionally, in another example, the wavelength of the first color light is 500nm-620nm, and the wavelength of the second color light is 600nm-660nm.
[0054] By way of example and not limitation, the thickness of the anti-sulfurization layer 300 is 0.03 um to 10 um, such as 0.03 um, 2 um, 4 um, 6 um, 8 um or 10 um.
[0055] Furthermore, if Figure 2-Figure 3 As shown, the bracket 100 includes a lead frame 120 and a reflective cup 130. The reflective cup 130 is disposed on the lead frame 120 and forms a mounting groove 110 with the lead frame 120. The conductive layer is disposed on the lead frame 120 and at least partially exposed in the mounting groove 110. In this way, the reflective cup 130 can be used to concentrate the light in the mounting groove 110 to emit light from the front side of the light emitting diode package structure 10, thereby improving the light extraction efficiency.
[0056] Preferably, the thickness of the centrifugal precipitation layer 411 accounts for no more than 30% of the thickness of the first fluorescent layer 410, and the content of the fluorescent powder in the centrifugal precipitation layer 411 accounts for no less than 50% of the total fluorescent powder content of the first fluorescent layer 410. In this way, the light extraction efficiency of the light emitting diode package structure 10 can be improved.
[0057] like Figure 2-Figure 3 As shown, the LED package structure 10 includes bonding wires 500 , which are respectively connected to the LED chip 200 and the conductive layer, so that the LED chip 200 is electrically connected to the conductive layer. The fluorescent portion 400 wraps the bonding wires 500 .
[0058] The following combination Figure 2 and Figure 3 See also Figures 4 to 9 , a method for preparing the light-emitting diode package structure 10 is described, wherein the method for preparing the light-emitting diode package structure 10 includes steps S110 to S140.
[0059] Step S110: providing a component to be packaged.
[0060] like Figure 4 As shown, the packaged component 40 includes a bracket 100 and a light emitting diode chip 200. The bracket 100 is provided with a mounting groove 110, and a conductive layer (not shown) is provided at the bottom of the mounting groove 110. The light emitting diode chip 200 is provided in the mounting groove 110 and electrically connected to the conductive layer.
[0061] Step S120: forming an anti-sulfurization layer covering the conductive layer in the mounting groove.
[0062] contrast Figure 4 See also Figure 5 , anti-sulfurization glue is filled in the installation groove 110, and after baking, the anti-sulfurization glue forms an anti-sulfurization layer 300 covering the conductive layer and having a thickness of 0.03um to 10um.
[0063] Step S130: a first fluorescent adhesive layer is disposed on the anti-sulfurization layer, and the first fluorescent adhesive layer is centrifugally precipitated and then baked, so that the first fluorescent adhesive layer forms a first fluorescent layer as a lower fluorescent layer.
[0064] contrast Figure 5 Combination Figure 2-Figure 3 See also Figure 6 and Figure 7The material of the first fluorescent layer 410 as the lower fluorescent layer 430a includes fluorescent powder and colloidal matrix. The colloidal matrix of the lower fluorescent layer 430a includes but is not limited to silica gel, and the fluorescent powder of the lower fluorescent layer 430a includes but is not limited to nitride or one or more other types of fluorescent powder, so that the lower fluorescent layer 430a can excite the first color light with a wavelength of 600nm to 660nm. Optionally, the top surface of the lower fluorescent layer 430a is concave or flat.
[0065] After the first fluorescent glue layer is centrifugally precipitated, the fluorescent powder on the top of the first fluorescent glue layer will settle to the bottom of the first fluorescent glue layer to form a centrifugal precipitation layer 411 at the bottom of the first fluorescent glue layer and a light-transmitting layer 412 at the top of the first fluorescent glue layer.
[0066] Optionally, baking the first fluorescent adhesive layer includes heating the first fluorescent adhesive layer after release precipitation to 80° C. to 120° C. (e.g., 80° C., 100° C., 120° C.) and baking for 5 min to 120 min (e.g., 5 min, 60 min, 120 min). In this way, the baking time of the first fluorescent adhesive layer is not too long, which is beneficial to improve the bonding of the second fluorescent layer 420 formed subsequently and the first fluorescent layer 410, so that the second fluorescent layer 420 and the first fluorescent layer 410 are not prone to delamination.
[0067] Step S140: a second fluorescent glue layer is disposed on the first fluorescent layer, and the second fluorescent glue layer is naturally precipitated and then baked, so that the second fluorescent glue layer forms a second fluorescent layer as an upper fluorescent layer.
[0068] contrast Figure 6 and Figure 7 Combination Figure 2-Figure 3 See also Figure 8 and Fig. 9 The material of the second fluorescent layer 420 as the upper fluorescent layer 440a includes fluorescent powder and colloidal matrix. The colloidal matrix of the upper fluorescent layer 440a includes but is not limited to silica gel, and the fluorescent powder of the upper fluorescent layer 440a includes but is not limited to aluminate or one or more other types of fluorescent powder, so that the upper fluorescent layer 440a can excite the second color light with a wavelength of 500nm to 620nm. Optionally, the top surface of the upper fluorescent layer 440a is concave or flat.
[0069] Among them, after the second fluorescent glue layer is naturally precipitated, although the fluorescent powder on the top of the second fluorescent glue layer will also be deposited to the bottom of the second fluorescent glue layer, the distribution of the fluorescent powder in the second fluorescent glue layer is still relatively dispersed after natural precipitation, and the deposition effect is not as good as centrifugal precipitation.
[0070] It should be understood that the first fluorescent layer 410 in the first embodiment of the present application specifically refers to a fluorescent layer formed by release precipitation, and the second fluorescent layer 420 specifically refers to a fluorescent layer formed by natural precipitation.
[0071] It should be noted that in other alternative embodiments, the phosphor of the lower phosphor layer 430a includes but is not limited to aluminate or one or more other types of phosphors, so that the lower phosphor layer 430a can excite the first color light with a wavelength of 500nm to 620nm. The phosphor of the upper phosphor layer 440a includes but is not limited to nitride or one or more other types of phosphors, so that the upper phosphor layer 440a can excite the second color light with a wavelength of 600nm to 660nm.
[0072] Embodiment 2
[0073] contrast Figure 2 and Figure 3 See also Fig.10 and Fig.11 The parts of the light-emitting diode package structure 20 of the second embodiment that are the same as the light-emitting diode package structure 10 of the first embodiment are not repeated here. The difference between the light-emitting diode package structure 20 of the second embodiment and the light-emitting diode package structure 10 of the first embodiment lies in that the structural combination of the lower fluorescent layer 430b and the upper fluorescent layer 440b is different, as described below.
[0074] See also Fig.10 and Fig.11 In the LED package structure 20, at least one of the multiple first fluorescent layers 410 arranged in layers is formed as a lower fluorescent layer 430b, and at least another one is formed as an upper fluorescent layer 440b. The lower fluorescent layer 430b covers the anti-sulfurization layer 300 and surrounds the side wall of the LED chip 200, and is arranged between the side wall of the LED chip 200 and the side wall of the mounting groove 110, and is used to excite the first color light. The upper fluorescent layer 440b covers the lower fluorescent layer 430b and the LED chip 200, and is used to excite the second color light.
[0075] Embodiment 3
[0076] contrast Figure 2 and Figure 3 See also Fig.12 and Fig.13 The parts of the light-emitting diode package structure 30 of the third embodiment that are the same as the light-emitting diode package structure 10 of the first embodiment are not repeated here. The difference between the light-emitting diode package structure 30 of the third embodiment and the light-emitting diode package structure 10 of the first embodiment lies in the structural combination of the lower fluorescent layer 430c and the upper fluorescent layer 440c, which are specifically as follows.
[0077] See also Fig.12 and Fig.13 In the LED package structure 30, the second fluorescent layer 420 is formed as a lower fluorescent layer 430c, and the first fluorescent layer 410 is formed as an upper fluorescent layer 440c. The lower fluorescent layer 430c covers the anti-sulfurization layer 300 and surrounds the side wall of the LED chip 200, and is disposed between the side wall of the LED chip 200 and the side wall of the mounting groove 110, and is used to excite the first color light. The upper fluorescent layer 440c covers the lower fluorescent layer 430c and the LED chip 200, and is used to excite the second color light different from the first color light.
[0078] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A light emitting diode packaging structure, characterized in that: The light emitting diode packaging structure comprises: The bracket is provided with a mounting groove, and a conductive layer is provided at the bottom of the mounting groove; A light emitting diode chip is disposed in the mounting groove and electrically connected to the conductive layer; an anti-sulfurization layer, disposed in the mounting groove and covering the conductive layer; and a fluorescent part, which is arranged in the mounting groove and covers the anti-sulfurization layer and the light-emitting diode chip, and the fluorescent part includes a colloidal matrix and fluorescent powder; The fluorescent part at least includes a first fluorescent layer, a centrifugal precipitation layer is formed at the bottom of the first fluorescent layer, and a light-transmitting layer is formed at the top of the first fluorescent layer; the fluorescent powder concentration of the centrifugal precipitation layer is higher than that of the light-transmitting layer.
2. The light emitting diode packaging structure according to claim 1, characterized in that: The light emitting diode package structure comprises a second fluorescent layer, wherein the second fluorescent layer and the first fluorescent layer are arranged in layers; The first fluorescent layer is formed as a lower fluorescent layer, and the second fluorescent layer is formed as an upper fluorescent layer; Alternatively, the second fluorescent layer is formed as the lower fluorescent layer, and the first fluorescent layer is formed as the upper fluorescent layer; Among them, the lower fluorescent layer covers the anti-sulfurization layer and surrounds the side wall of the light-emitting diode chip, is arranged between the side wall of the light-emitting diode chip and the side wall of the mounting groove, and is used to excite a first color light; the upper fluorescent layer covers the lower fluorescent layer and the light-emitting diode chip, and is used to excite a second color light different from the first color light.
3. The light emitting diode packaging structure according to claim 1, characterized in that: At least one of the plurality of first fluorescent layers arranged in layers is formed as a lower fluorescent layer, and at least another one is formed as an upper fluorescent layer; Among them, the lower fluorescent layer covers the anti-sulfurization layer and surrounds the side wall of the light-emitting diode chip, is arranged between the side wall of the light-emitting diode chip and the side wall of the mounting groove, and is used to excite the first color light; the upper fluorescent layer covers the lower fluorescent layer and the light-emitting diode chip, and is used to excite the second color light.
4. The light emitting diode packaging structure according to claim 2 or 3, characterized in that: The first color light is different from the second color light, the first color light is at least one of red light, green light or yellow-green light, and the second color light is at least one of red light, green light or yellow-green light.
5. The light emitting diode packaging structure according to claim 4, characterized in that: The wavelength of the first color light is 600nm~660nm, and the wavelength of the second color light is 500nm~620nm; or the wavelength of the first color light is 500nm~620nm, and the wavelength of the second color light is 600nm~660nm.
6. The light emitting diode packaging structure according to claim 1, characterized in that: The light emitting diode chip is exposed outside the anti-sulfurization layer.
7. The light emitting diode packaging structure according to claim 1, characterized in that: The thickness of the anti-sulfurization layer is 0.03um~10um.
8. The light emitting diode packaging structure according to claim 1, characterized in that: The bracket includes a lead frame and a reflective cup, wherein the reflective cup is disposed on the lead frame and forms a mounting groove with the lead frame, and the conductive layer is disposed on the lead frame and at least partially exposed in the mounting groove.
9. The light emitting diode packaging structure according to claim 1, characterized in that: The percentage of the thickness of the centrifugal precipitation layer to the thickness of the first fluorescent layer is no more than 30%.
10. The light emitting diode packaging structure according to claim 1, characterized in that: The light emitting diode chip is an LED chip.