Display device

Abstract

A display device includes a substrate including a plurality of sub-pixels, a planarization layer disposed on the substrate and including a recess and a protrusion, a first electrode disposed to cover a portion of the protrusion and the recess, a reflection auxiliary layer disposed in a portion of the recess and covering at least a portion of an edge of the first electrode, a bank disposed on a portion of a top surface of the first electrode and disposed on the reflection auxiliary layer, an organic layer disposed on the top surface of the first electrode, and a second electrode disposed on the bank and the organic layer, thereby improving front brightness, viewing angle brightness, and viewing angle spot reduction effects.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0180575, filed on December 6, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to display devices, and more particularly, to display devices with improved light extraction efficiency. Background Technology

[0004] Currently, with the advent of the comprehensive information age, the field of display devices that visually express electrical information signals has developed rapidly, and continuous research is being conducted to improve the performance of various display devices, such as thinness, light weight and low power consumption.

[0005] Among various display devices, organic light-emitting diode (OLED) displays are self-emissive, making a separate light source unnecessary, unlike liquid crystal displays (LCDs). Therefore, OLED displays can be manufactured with light weight and thin profile. Furthermore, because the display is driven by low voltage, it is advantageous not only in terms of power consumption but also in terms of color reproduction, response speed, viewing angle, and contrast ratio (CR). Therefore, it holds promise for applications in a wide range of fields. Summary of the Invention

[0006] One objective of this disclosure is to provide a display device with a structure that improves light extraction efficiency.

[0007] Another objective of this disclosure is to provide a display device in which frontal brightness and viewing angle brightness are improved.

[0008] One objective of this disclosure is to provide a display device that reduces the identification of viewing spot.

[0009] The purpose of this disclosure is not limited to the above-mentioned purposes, and other purposes not mentioned above will be clearly understood by those skilled in the art based on the following description.

[0010] According to one aspect of this disclosure, a display device is provided. The display device includes a substrate, the substrate including a plurality of sub-pixels. The display device further includes a planarization layer disposed on the substrate and including recesses and protrusions. The display device further includes a first electrode disposed to cover a portion of the protrusions and the recesses. The display device further includes a reflective auxiliary layer disposed in a portion of the recesses and covering at least a portion of the edge of the first electrode. The display device further includes a dam disposed on a portion of the top surface of the first electrode and disposed on the reflective auxiliary layer. The display device further includes an organic layer disposed on the top surface of the first electrode. The display device further includes a second electrode disposed on the dam and the organic layer.

[0011] According to another aspect of this disclosure, a display device is provided. The display device includes a substrate, the substrate including a plurality of sub-pixels. The display device further includes a planarization layer disposed on the substrate and including recesses and protrusions. The display device further includes a first electrode disposed to cover a portion of the protrusions and the recesses. The display device further includes a reflective auxiliary layer covering at least a portion of the edge of the first electrode. The display device further includes a dam disposed on a portion of the top surface of the first electrode and disposed on the reflective auxiliary layer. The display device further includes an organic layer disposed on the top surface of the first electrode. The display device further includes a second electrode disposed on the dam and the organic layer. Furthermore, at least one of the plurality of sub-pixels includes a first light-emitting region, a second light-emitting region surrounding the first light-emitting region, and a third light-emitting region surrounding the second light-emitting region, and the reflective auxiliary layer is disposed in at least a portion of each of the second light-emitting region and the third light-emitting region.

[0012] Further details of the exemplary embodiments are included in the detailed description and accompanying drawings.

[0013] According to an exemplary embodiment of this disclosure, the planarization layer includes openings corresponding to the light-emitting regions to improve light extraction efficiency, thereby enabling the display device to operate at low power in terms of power consumption reduction.

[0014] According to an exemplary embodiment of this disclosure, a reflection-aiding layer is provided in a portion of the top surface of a first electrode disposed in a portion of the opening and protrusion region of the planarization layer to improve frontal brightness and viewing angle brightness and reduce viewing angle spots.

[0015] The effects of this disclosure are not limited to those described above, and other effects not mentioned above will be readily understood by those skilled in the art from the following description.

[0016] The objectives to be achieved by this disclosure, the means to achieve those objectives, and the effects of this disclosure do not specify the essential features of the claims, and therefore the scope of the claims is not limited to the content of this disclosure. Attached Figure Description

[0017] The above and other aspects, features and additional advantages of this disclosure will become more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1 A perspective view of a display device according to an exemplary embodiment of the present disclosure;

[0019] Figure 2 A diagram illustrating the light-emitting and non-light-emitting regions included in the active region of a display device according to an exemplary embodiment of the present disclosure is provided.

[0020] Figure 3 A plan view illustrating a sub-pixel structure disposed in the active region of a display device according to an exemplary embodiment of the present disclosure is shown for illustrative purposes.

[0021] Figure 4 For along Figure 3 A cross-sectional view of the display device taken by line AB;

[0022] Figure 5 for Figure 4 A magnified view of region X;

[0023] Figures 6A to 6C A graph for comparing the reflectivity of the first electrode according to comparative embodiment 1 with the reflectivity of a structure in which the first electrode and the reflective auxiliary layer according to exemplary embodiment 1 are connected;

[0024] Figure 7 A diagram illustrating the laminated structure of a first electrode of a light-emitting diode and a reflective auxiliary layer included in a display device according to an exemplary embodiment of the present disclosure;

[0025] Figure 8 This is a graph obtained by measuring the reflectivity of the second sub-electrode based on the thickness of the third sub-electrode;

[0026] Figure 9A and Figure 9B A graph illustrating the reflectivity relative to wavelength based on the thickness of a reflective auxiliary layer disposed in the active region of a display device according to an exemplary embodiment of the present disclosure;

[0027] Figure 10 A plan view illustrating a sub-pixel structure disposed in the active region of a display device according to another exemplary embodiment of the present disclosure is shown for illustrative purposes.

[0028] Figure 11 For along Figure 10 A cross-sectional view taken from line CD;

[0029] Figure 12A graph comparing the viewing angle characteristics of the display device according to Comparative Embodiment 2 and Exemplary Embodiment 2;

[0030] Figures 13 to 15 A schematic cross-sectional view showing the location and shape of at least a portion of the structure of the recessed area of ​​the overlapping third planarization layer;

[0031] Figure 16 A plan view illustrating a sub-pixel structure disposed in the active region of a display device according to yet another exemplary embodiment of the present disclosure;

[0032] Figure 17 For along Figure 16 A cross-sectional view taken from line EF;

[0033] Figure 18 A cross-sectional view showing a sub-pixel structure disposed in the active region of a display device according to yet another exemplary embodiment of the present disclosure;

[0034] Figure 19 A cross-sectional view illustrating a plurality of sub-pixel structures disposed in the active region of a display device according to yet another exemplary embodiment of the present disclosure;

[0035] Figure 20A A graph comparing the reflectance of the blue wavelength band of the display device according to Comparative Embodiment 3 with that of the display device according to Exemplary Embodiment 3;

[0036] Figure 20B To compare the reflectance of the green wavelength band of the display device according to Comparative Embodiment 3 with the reflectance of the green wavelength band of the display device according to Exemplary Embodiment 3; and

[0037] Figure 20C A graph comparing the reflectance of the red wavelength band of the display device according to Comparative Embodiment 3 with the reflectance of the red wavelength band of the display device according to Exemplary Embodiment 3. Detailed Implementation

[0038] The advantages and features of this disclosure, as well as methods for achieving these advantages and features, will become clear from the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in a variety of forms. The exemplary embodiments are provided by way of example only to enable those skilled in the art to fully understand the disclosure and scope of this disclosure.

[0039] The shapes, dimensions, ratios, angles, numbers, etc., shown in the accompanying drawings used to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, the same reference numerals generally denote the same elements. Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms used herein, such as “comprising,” “having,” and “consisting of,” are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0040] Even if not explicitly stated, components are interpreted as including the normal error range.

[0041] When terms such as “on,” “above,” “below,” and “next to” are used to describe the positional relationship between two parts, one or more parts may be positioned between the two parts unless these terms are used with the terms “immediately adjacent” or “directly.”

[0042] When an element or layer is placed "on" another element or layer, the other layer or element may be placed directly on or between the other elements.

[0043] Although the terms "first," "second," etc., are used to describe a wide variety of components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component referred to below can be the second component in the technical concept of this disclosure.

[0044] Throughout the specification, the same reference numerals generally denote the same elements.

[0045] The dimensions and thicknesses of the components shown in the accompanying drawings are illustrated for ease of description, and this disclosure is not limited to the dimensions and thicknesses of the components shown.

[0046] Features of the various embodiments disclosed herein may be partially or completely adhered to or combined with each other and may be interlocked and operated in a variety of technical ways, and the embodiments may be implemented independently of each other or in relation to each other.

[0047] In the following, a display device according to an exemplary embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0048] Figure 1 This is a perspective view of a display device according to an exemplary embodiment of the present disclosure.

[0049] Reference Figure 1The display device 100 may include a substrate 110. The substrate 110 may support and protect various components of the display device 100.

[0050] The substrate 110 includes a first region A1 and a second region A2. The first region A1 can be a flat region, and the second region A2 can be a curved region. The first region A1 can be referred to as a flat portion, and the second region A2 can be referred to as a curved portion or a bent portion.

[0051] The second region A2 is set in the upper, lower, and side portions of the first region A1 such that the gradient increases with distance from the first region A1, but is not limited thereto. For example, each of the second regions A2 set in the upper, lower, and side portions of the first region A1 can be set to have a different curvature.

[0052] Furthermore, the second region A2 can be located on only one side of the first region A1, or it can be located on all sides of the first region A1. For example, when the first region A1 has four sides, the second region A2 can be located on one or more of the four sides, or as... Figure 1 As shown, it can be set on all sides, but is not limited to this.

[0053] The display device 100 includes an active area AA and an inactive area NA.

[0054] The active region AA and the non-active region NA can be respectively disposed in the first region A1 and the second region A2 of the substrate 110.

[0055] The active area AA is the area in which an image is displayed in the display device 100, and display elements and various driving elements for driving the display elements can be set in the active area AA.

[0056] The active area AA may include a plurality of subpixels SP1, SP2, SP3, and SP4. Subpixel SP is the smallest unit for configuring the screen, and each of the plurality of subpixels SP1, SP2, SP3, and SP4 may include a light-emitting diode and driving circuitry.

[0057] The plurality of subpixels SP1, SP2, SP3 and SP4 may include a first subpixel SP1, a second subpixel SP2, a third subpixel SP3 and a fourth subpixel SP4.

[0058] The first to third sub-pixels SP1, SP2, and SP3 are sub-pixels disposed in the first region A1 of the active region AA, and the fourth sub-pixel SP4 is a sub-pixel disposed in the second region A2 of the active region AA. That is, the first to third sub-pixels SP1, SP2, and SP3 can be disposed in the flat portion of the substrate 110, and the fourth sub-pixel SP4 can be disposed in the curved portion of the substrate 110.

[0059] The first to fourth sub-pixels SP1, SP2, SP3, and SP4 set in the active region AA can have different areas and shapes, but are not limited to them. In some cases, the first to fourth sub-pixels SP1, SP2, SP3, and SP4 can have the same area and shape.

[0060] The non-active region NA is the area where no image is displayed, and various components can be set in the non-active region NA to drive the plurality of sub-pixels SP1, SP2, SP3, and SP4 set in the active region AA. For example, driver ICs, flexible films, and pads for connecting thereto can be set to drive the plurality of sub-pixels SP1, SP2, SP3, and SP4 to supply signals.

[0061] The non-active region NA is the region surrounding the active region AA, but it is not limited to this. For example, the non-active region NA can be a region extending from one side of the active region AA.

[0062] Figure 2 The diagram illustrates, for illustrative purposes, the light-emitting and non-light-emitting regions included in the active region of a display device according to an exemplary embodiment of the present disclosure.

[0063] Reference Figure 2 The active area AA of the display device 100 may include a plurality of sub-pixels SP1, SP2, SP3 and SP4.

[0064] At least one of the plurality of sub-pixels SP1, SP2, SP3 and SP4 disposed in the active region AA may include a light-emitting region EA and a non-light-emitting region NEA surrounding the light-emitting region EA.

[0065] At least one light-emitting region EA may include a plurality of light-emitting regions EA1, EA2, and EA3. For example, the light-emitting region EA may include a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3.

[0066] Furthermore, the second light-emitting area EA2 can be configured to surround the first light-emitting area EA1. The third light-emitting area EA3 can be configured to surround the second light-emitting area EA2.

[0067] The brightness of the second light-emitting area EA2 can be lower than the brightness of the first light-emitting area EA1 and the brightness of the third light-emitting area EA3. The brightness of the third light-emitting area EA3 can be lower than the brightness of the first light-emitting area EA1.

[0068] The non-luminous region NEA can be set between the luminous regions EA of multiple sub-pixels SP1, SP2, SP3 and SP4.

[0069] The non-emitting region NEA can be set as a third emitting region EA3 surrounding each sub-pixel.

[0070] Despite Figure 2 In the above, the light-emitting regions EA of the first sub-pixel to the third sub-pixel SP1, SP2 and SP3 include the first light-emitting regions to the third light-emitting regions EA1, EA2 and EA3, but this disclosure is not limited thereto.

[0071] For example, at least one of the first to third sub-pixels SP1, SP2 and SP3 may include only one light-emitting region. Alternatively, the fourth sub-pixel SP4 disposed in the second region A2 of the display device 100 may also have a structure in which the light-emitting region EA includes the first to third light-emitting regions EA1, EA2 and EA3.

[0072] Figure 3 This is a plan view illustrating a sub-pixel structure disposed in the active region of a display device according to an exemplary embodiment of the present disclosure.

[0073] Reference Figure 3 The display device 100 may include at least one sub-pixel disposed in the active region AA, which may include a first electrode 121 of a light-emitting diode, a reflective auxiliary layer 130, and a dam 131.

[0074] Each of the reflective auxiliary layer 130 and the dam 131 can be configured to expose a portion of the top surface of the first electrode 121.

[0075] The reflective auxiliary layer 130 and the embankment 131 can cover the edge of the first electrode 121.

[0076] The dam 131 can overlap the entire reflective auxiliary layer 130. Furthermore, the dam 131 can cover the edges of the reflective auxiliary layer 130. That is, the dam 131 can be configured to cover the top and side surfaces of the reflective auxiliary layer 130.

[0077] Reference Figure 4 The placement relationship of the first electrode 121, the reflective auxiliary layer 130, and the dam 131 of the light-emitting diode is described in detail.

[0078] Figure 4 For along Figure 3The cross-sectional view of the display device is taken by line AB.

[0079] Reference Figure 4 The substrate 110 may include a first substrate 101a, a second substrate 101c, and an intermediate film 101b between the first substrate 101a and the second substrate 101c.

[0080] Each of the first substrate 101a and the second substrate 101c may be formed of glass or a flexible plastic material. When the first substrate 101a and the second substrate 101c are formed of a plastic material, for example, the first substrate 101a and the second substrate 101c may be formed of polyimide (PI), but are not limited thereto.

[0081] The intermediate membrane 101b can be an inorganic membrane and inhibit water permeation, but is not limited to this.

[0082] A first buffer layer BUF may be disposed on the substrate 110. The first buffer layer BUF can improve the adhesion strength between the layer formed on the first buffer layer BUF and the substrate 110, and block alkaline components that leak from the substrate 110.

[0083] The first buffer layer BUF can be single-layered or multi-layered. When the first buffer layer BUF is multi-layered, it can include multiple buffer layers 103 and active buffer layers 104.

[0084] The multi-buffer layer 103 and the active buffer layer 104 can be formed from a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but are not limited thereto.

[0085] Depending on the type or material of the substrate 110 and the structure and type of the thin-film transistor, the first buffer layer BUF can be omitted.

[0086] The first light-blocking layer 102a can be disposed between the first buffer layer BUF and the substrate 110.

[0087] The first light-blocking layer 102a may overlap all or part of the first active layer 151. The first light-blocking layer 102a can be used as a light-shielding part to block light entering from below. In this case, the first light-blocking layer 102a can be electrically connected to the first source electrode 153.

[0088] The first light-blocking layer 102a may contain a conductive material. For example, the first light-blocking layer 102a may be any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy of two or more of them, or a multilayer thereof, but is not limited thereto.

[0089] Multiple transistors T1 and T2, storage capacitor Cst, and various electrodes or signal lines can be arranged on the first buffer layer BUF.

[0090] For example, a plurality of transistors T1 and T2 formed on the first buffer layer BUF can be configured of the same material and can be disposed on the same layer. In contrast, such as Figure 4 As shown, the first transistor T1 and the second transistor T2 in the plurality of transistors T1 and T2 can be configured with different materials and positioned on different layers.

[0091] The plurality of transistors T1 and T2 may include a first transistor T1 and a second transistor T2.

[0092] The first transistor T1 may include a first active layer 151, a first gate electrode 152, a first source electrode 153, and a first drain electrode 154.

[0093] The second transistor T2 may include a second active layer 171, a second gate electrode 172, a second source electrode 174, and a second drain electrode 173.

[0094] The second active layer 171 of the second transistor T2 can be positioned higher than the first active layer 151 of the first transistor T1.

[0095] The first buffer layer BUF can be located below the first active layer 151 of the first transistor T1, and the second buffer layer 107 can be located below the second active layer 171 of the second transistor T2.

[0096] The second light-blocking layer 102b can be disposed below the second active layer 171.

[0097] The second light-blocking layer 102b may contain a conductive material. For example, the second light-blocking layer 102b may be any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy of two or more of them, or a multilayer thereof, but is not limited thereto.

[0098] The first active layer 151 of the first transistor T1 can be disposed on the first buffer layer BUF, and the second active layer 171 of the second transistor T2 can be disposed on the second buffer layer 107. Here, the second buffer layer 107 can be positioned higher than the first buffer layer BUF.

[0099] The first active layer 151 of the first transistor T1 can be disposed on the first buffer layer BUF, and the first gate insulating film 105 can be disposed on the first active layer 151 of the first transistor T1.

[0100] The first active layer 151 may be formed of oxide semiconductor or amorphous silicon (a-Si), polycrystalline silicon (poly-Si) or organic semiconductor.

[0101] The first gate insulating film 105 may be formed as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material, or as a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto.

[0102] The second gate electrode 172 of the second transistor T2 can be disposed on the first gate insulating film 105, and the first interlayer insulating film 106 can be disposed on the second gate electrode 172 of the second transistor T2.

[0103] The second gate electrode 172 may be any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy of two or more of them, or a multilayer thereof, but is not limited thereto.

[0104] The first interlayer insulating film 106 can be configured as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material, or as a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto.

[0105] The first active layer 151 of the first transistor T1 may include a first channel region with overlapping first gate electrodes 152, a first source connection region on one side of the first channel region, and a first drain connection region on the other side of the first channel region.

[0106] The second buffer layer 107 can be disposed on the first interlayer insulating film 106.

[0107] The second buffer layer 107 can be configured as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material, or as a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto.

[0108] The second active layer 171 of the second transistor T2 can be disposed on the second buffer layer 107, and the second gate insulating film 108 can be disposed on the second active layer 171.

[0109] The second active layer 171 can be formed of oxide semiconductor or amorphous silicon (a-Si), polycrystalline silicon (poly-Si) or organic semiconductor.

[0110] The second gate insulating film 108 may be formed as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material, or as a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto.

[0111] The second gate electrode 172 of the second transistor T2 can be disposed on the second gate insulating film 108, and the second interlayer insulating film 109 can be disposed on the second gate electrode 172.

[0112] The second gate electrode 172 may be any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy of two or more of them, or a multilayer thereof, but is not limited thereto.

[0113] The second interlayer insulating film 109 can be configured as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) as an inorganic material, or as a multilayer of silicon nitride (SiNx) or silicon oxide (SiOx), but is not limited thereto.

[0114] Here, the second active layer 171 of the second transistor T2 may include a second channel region overlapping the second gate electrode 172, a second source connection region located on one side of the second channel region, and a second drain connection region located on the other side of the second channel region.

[0115] The first source electrode 153 and the first drain electrode 154 of the first transistor T1 can be disposed on the second interlayer insulating film 109. Furthermore, the second source electrode 174 and the second drain electrode 173 of the second transistor T2 can be disposed on the second interlayer insulating film 109.

[0116] The first source electrode 153 and the first drain electrode 154 of the first transistor T1 can be connected to the first source connection region and the first drain connection region of the first active layer 151 through the contact holes of the second interlayer insulating film 109, the second gate insulating film 108, the second buffer layer 107, the first interlayer insulating film 106 and the first gate insulating film 105.

[0117] The second source electrode 174 and the second drain electrode 173 of the second transistor T2 can be connected to the second source connection region and the second drain connection region of the second active layer 171 through the contact holes of the second interlayer insulating film 109 and the second gate insulating film 108.

[0118] The storage capacitor Cst may include a first capacitor electrode 161 and a second capacitor electrode 162.

[0119] The first source electrode 153, the first drain electrode 154, the second source electrode 174, the second drain electrode 173, the first capacitor electrode 161, and the second capacitor electrode 162 may be any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy of two or more of them, or a multilayer thereof, but this disclosure is not limited thereto.

[0120] The planarization layer PLN can be disposed on the first transistor T1 and the second transistor T2.

[0121] The planarization layer PLN may include a first planarization layer 111, a second planarization layer 112, and a third planarization layer 113.

[0122] Each of the first to third planarization layers 111, 112 and 113 may be formed from, but is not limited to, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene sulfide resin, a benzocyclobutene resin and a photoresist.

[0123] The first planarization layer 111 can be disposed on the first transistor T1 and the second transistor T2. That is, the first planarization layer 111 can be disposed on the first source electrode 153 and the first drain electrode 154 of the first transistor T1 and the second source electrode 174 and the second drain electrode 173 of the second transistor T2.

[0124] The relay electrode 116 can be disposed on the first planarization layer 111. The relay electrode 116 can be an electrode that relays the electrical connection between the first source electrode 153 of the first transistor T1 and the first electrode 121 of the light-emitting diode ED.

[0125] The relay electrode 116 can be electrically connected to the first source electrode 153 of the first transistor T1 through the contact hole of the first planarization layer 111.

[0126] The relay electrode 116 can be formed from a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni) and neodymium (Nd) or their alloys.

[0127] The second planarization layer 112 can be disposed on the relay electrode 116 and the first planarization layer 111.

[0128] The third planarization layer 113 can be disposed on the second planarization layer 112. The first electrode 121 of the light-emitting diode ED can be electrically connected to the relay electrode 116 through the contact holes of the second planarization layer 112 and the third planarization layer 113.

[0129] Despite Figure 4 The diagram shows a structure in which a second planarization layer 112 is disposed on a first planarization layer 111 and a third planarization layer 113 is disposed on the second planarization layer 112, but this disclosure is not limited thereto. For example, on a substrate 110, the third planarization layer 113 may be disposed on the first planarization layer 111, or only the third planarization layer 113 may be disposed.

[0130] The third planarization layer 113 may include protrusions 114 and recesses 115.

[0131] The recess 115 of the third planarization layer 113 can expose a portion of the top surface of the second planarization layer 112.

[0132] The recess 115 of the third planarization layer 113 can be set in the region corresponding to the first light-emitting region EA1 and the second light-emitting region EA2.

[0133] Despite Figure 4 The diagram shows a structure in which the third planarization layer 113 has a recess 115 in the region corresponding to the first light-emitting region and the second light-emitting regions EA1 and EA2, but this disclosure is not limited thereto. For example, the height of the third planarization layer 113 disposed in the region corresponding to the first light-emitting region and the second light-emitting regions EA1 and EA2 may be lower than the height of the third planarization layer 113 disposed in the region corresponding to the non-light-emitting region NEA and the third light-emitting region EA3 (excluding the contact hole region).

[0134] The protrusion 114 of the third planarization layer 113 may include an inclined portion 114a and a flat portion 114b extending from the inclined portion 114a.

[0135] The first electrode 121 can be disposed in the recess 115 of the third planarization layer 113, and can also be disposed in a portion of the protrusion 114. Specifically, the first electrode 121 can be disposed in the recess 115, on the inclined portion 114a of the protrusion 114, and in a portion of the flat portion 114b.

[0136] The first electrode 121 can be the anode electrode of a light-emitting diode (ED).

[0137] The first electrode 121 may include a reflective electrode for reflecting light.

[0138] The first electrode 121 can be a single-layer structure or a multi-layer structure. When the first electrode 121 is a multi-layer structure, the first electrode may include at least one reflective electrode layer and at least one transparent conductive material layer.

[0139] The reflective electrode included in the first electrode 121 may include any of the following: metals, such as aluminum (Al), gold (Au), silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), and titanium (Ti), or alloys thereof, but is not limited thereto.

[0140] The transparent conductive material included in the first electrode 121 may include, but is not limited to, at least one of indium tin oxide (ITO), indium zinc oxide (IZO) or indium gallium zinc oxide (IGZO).

[0141] The first electrode 121 can also be disposed in contact holes arranged in the second planarization layer 112 and the third planarization layer 113.

[0142] The first electrode 121 can contact the top surface of the second planarization layer 112 in the region corresponding to the recess 115 of the third planarization layer 113.

[0143] The first electrode 121 can contact the relay electrode 116 disposed below the second planarization layer 112 through contact holes arranged in the second planarization layer 112 and the third planarization layer 113.

[0144] The reflective auxiliary layer 130 may be disposed on a portion of the third planarization layer 113 and a portion of the first electrode 121.

[0145] The reflective auxiliary layer 130 can be configured to cover the edge of the first electrode 121 and extend to a portion of the top surface of the third planarization layer 113.

[0146] The reflective auxiliary layer 130 may overlap a portion of the recess 115 of the third planarization layer 113. Specifically, the reflective auxiliary layer 130 may be disposed on the side surface of the third planarization layer in the recess 115 of the third planarization layer 113, and may also be disposed in a portion of the top surface of the first electrode 121.

[0147] The reflective auxiliary layer 130 may not overlap with the portion of the top surface of the first electrode 121 disposed in the recess 115 of the third planarization layer 113.

[0148] The reflective auxiliary layer 130 may also overlap with the contact hole region. Specifically, the reflective auxiliary layer 130 may be disposed along the contact hole region provided in the second planarization layer 112 and the third planarization layer 113. Here, the reflective auxiliary layer 130 may be disposed in the contact hole region formed in the second planarization layer 112 and the third planarization layer 113, but may fill a portion of the contact hole, but may not fill other portions. That is, the reflective auxiliary layer 130 may be formed along the shape of the top surface of the first electrode 121 and the third planarization layer 113 disposed below the reflective auxiliary layer 130.

[0149] Dike 131 can be disposed above reflective auxiliary layer 130. Dike 131 can contain organic material.

[0150] Dike 131 can be set at the same time as the top and side surfaces of the reflective auxiliary layer 130.

[0151] The reflective auxiliary layer 130 can be patterned through an etching process.

[0152] For example, after forming a material for a reflective auxiliary layer 130 on a substrate 110 on which a first electrode 121 is disposed, a material for a dam 131 can be formed on the material of the reflective auxiliary layer 130.

[0153] After forming the holes in the dam 131 by patterning the material of the dam 131, the patterned material of the dam 131 can be used as a mask to pattern the material of the reflective auxiliary layer 130. At this time, the ends of the material of the dam 131 and the ends of the patterned reflective auxiliary layer 130 can be matched. Therefore, in order for the dam 131 to cover the side surface of the reflective auxiliary layer 130, the material of the dam 131 can be heat-treated. The material of the dam 131 includes an organic material, which allows it to exhibit fluidity when heat is applied. Therefore, the material of the dam 131 can flow to cover the side surface of the reflective auxiliary layer 130.

[0154] This process allows for the construction of a dam 131 while simultaneously covering the top and side surfaces of the reflective auxiliary layer 130.

[0155] The dam 131 may include a hole in the dam 131 that exposes a portion of the top surface of the first electrode 121 in a portion region of the recess 115 of the overlapping third planarization layer 113. The hole in the dam 131 may overlap a portion of the first electrode 121.

[0156] The dam 131 may also overlap a portion of the recess 115 of the third planarization layer 113. Specifically, the dam 131 may be disposed on the side surface of the third planarization layer 113 in the recess 115 of the third planarization layer 113, and may also be disposed in a portion of the top surface of the first electrode 121.

[0157] The dam 131 also overlaps with the contact hole region and can fill the contact hole region. In addition, the dam 131 can overlap the first electrode 121 and the reflective auxiliary layer 130 in the contact hole region.

[0158] At least one spacer 132 integrally formed with the embankment 131 may be disposed above the third planarization layer 113.

[0159] Despite Figure 4The diagram shows a structure in which the spacer 132 is integrally formed with the embankment 131, but this disclosure is not limited thereto. The spacer 132 may be separated from the embankment 131.

[0160] The spacer 132 may overlap a portion of the flat portion 114b of the protrusion 114 of the third planarization layer 113. The spacer 132 may not overlap the recess 115 of the third planarization layer 113, nor the inclined portion 114a of the protrusion 114 of the third planarization layer 113.

[0161] The organic layer 122 of the light-emitting diode ED can be disposed in the recess 115 of the third planarization layer 113.

[0162] The organic layer 122 may include at least one light-emitting layer and at least one common layer.

[0163] The emissive layer is an organic layer that emits light of a specific color. Different emissive layers can be set in a plurality of sub-pixels SP1, SP2, SP3, and SP4, or the same emissive layer can be set in all of the plurality of sub-pixels SP1, SP2, SP3, and SP4. For example, when different emissive layers are set in the plurality of sub-pixels SP1, SP2, SP3, and SP4, a red emissive layer can be set in the red sub-pixel, a green emissive layer can be set in the green sub-pixel, and a blue emissive layer can be set in the blue sub-pixel. When the same emissive layer is set in all of the plurality of sub-pixels SP1, SP2, SP3, and SP4, the light from the emissive layer can be converted into a variety of colors of light through separate light conversion layers and color filters.

[0164] The common layer is an organic layer configured to improve the luminous efficiency of the light-emitting layer. The common layer can be formed as the same layer above a plurality of sub-pixels SP1, SP2, SP3, and SP4. That is, the common layer of the plurality of sub-pixels SP1, SP2, SP3, and SP4 can be formed simultaneously using the same material through the same process. The common layer may include, but is not limited to, a hole injection layer, a hole transport layer, an electron transport layer, and a charge generation layer.

[0165] The organic layer 122 can be disposed on the top surface of the embankment 131 in the recess 115 of the non-overlapping third planarization layer 113 of the first electrode 121.

[0166] The organic layer 122 may be spaced apart from the reflective auxiliary layer 130 in the recess 115 of the third planarization layer 113. Specifically, the dam 131 may be disposed in the recess 115 of the third planarization layer 113 between the organic layer 122 and the reflective auxiliary layer 130.

[0167] The second electrode 123 of the light-emitting diode (ED) can be disposed on the organic layer 122, the diaphragm 131, and the spacer 132. The second electrode 123 can be the cathode electrode of the light-emitting diode (ED).

[0168] The second electrode 123 may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) or a metal alloy such as MgAg or ytterbium (Yb) alloy, and may also include a metal doped layer, but is not limited thereto. An encapsulation layer 140 may be disposed on the second electrode 123 of the light-emitting diode ED.

[0169] The encapsulation layer 140 can be configured to cover the light-emitting diode ED.

[0170] The encapsulation layer 140 can be a layer that prevents moisture or oxygen from penetrating into the light-emitting diode ED disposed below the encapsulation layer 140. Specifically, the encapsulation layer 140 can prevent moisture or oxygen from penetrating into the organic layer 122, which includes the light-emitting layer.

[0171] The encapsulation layer 140 may include a first encapsulation layer 141, a second encapsulation layer 142, and a third encapsulation layer 143.

[0172] The first encapsulation layer 141 can be disposed on the second electrode 123 of the light-emitting diode ED, the second encapsulation layer 142 can be disposed on the first encapsulation layer 141, and the third encapsulation layer 143 can be disposed on the second encapsulation layer 142.

[0173] The first encapsulation layer 141 and the third encapsulation layer 143 can be inorganic films, and the second encapsulation layer 142 can be an organic film. The second encapsulation layer 142 is configured as an organic film to serve as a planarization layer.

[0174] Meanwhile, at least one sub-pixel SP of the display device 100 may include a plurality of light-emitting regions EA1, EA2 and EA3. For example, at least one sub-pixel SP of the display device 100 may include a first light-emitting region EA1, a second light-emitting region EA2 surrounding the first light-emitting region EA1 and a third light-emitting region EA3 surrounding the second light-emitting region EA2.

[0175] The first light-emitting region EA1 can be the area where no dam 131 is provided on the first electrode 121. That is, the area where the hole of the dam 131 that exposes a portion of the top surface of the first electrode 121 is located in the recess 115 of the third planarization layer 113 can be the first light-emitting region EA1 of the sub-pixel SP.

[0176] The second luminescent region EA2 may include the region where the recess 115 of the third planarization layer 113 overlaps with the embankment 131.

[0177] The third light-emitting region EA3 may include the region of the inclined portion 114a corresponding to the protrusion 114 of the third planarization layer 113. Alternatively, the third light-emitting region EA3 may include the region in which the first electrode 121 is disposed on the inclined portion 114a.

[0178] The first electrode 121 of the light-emitting diode (ED) can be disposed in the entire first light-emitting region to the third light-emitting regions EA1, EA2 and EA3, and can also be disposed in a portion of the non-light-emitting region NEA. The organic layer 122 of the light-emitting diode (ED) can be disposed in the first light-emitting region EA1, and in some cases, can also be disposed in a portion of the second light-emitting region EA2.

[0179] The reflective auxiliary layer 130 may be disposed in at least a portion of the second light-emitting region EA2 and the entire third light-emitting region EA3. Furthermore, the reflective auxiliary layer 130 may be disposed in at least a portion of the non-light-emitting region NEA, but may not be disposed in the first light-emitting region EA1.

[0180] The reflective auxiliary layer 130 is disposed in at least a portion of the second luminous region EA2 and the entire third luminous region EA3 to improve frontal brightness and viewing angle characteristics.

[0181] This will be referred to below Figure 5 Detailed description.

[0182] Figure 5 for Figure 4 A magnified view of region X.

[0183] Reference Figure 5 The display device 100 may include a light-emitting diode (ED) and a reflective auxiliary layer 130.

[0184] The reflective auxiliary layer 130 may contain a material with a resistance higher than that of the first electrode 121 of the light-emitting diode ED. The reflective auxiliary layer 130 may contain inorganic compounds, but is not limited thereto.

[0185] Furthermore, the reflective auxiliary layer 130 may contain a material in which the amount of transmitted light is greater than the amount of absorbed light. For example, when forming a plurality of organic layers 122 of a light-emitting diode ED, the reflective auxiliary layer 130 may contain the same material as that contained in at least one layer. The reflective auxiliary layer 130 may contain magnesium fluoride (MgF2), but is not limited thereto.

[0186] The dam 131 can be configured to surround the top and side surfaces of the reflective auxiliary layer 130. Therefore, the reflective auxiliary layer 130 can be configured to be spaced apart from the organic layer 122 of the light-emitting diode ED disposed in the recess 115 of the third planarization layer 113.

[0187] The reflective auxiliary layer 130, which contains an inorganic compound, is spaced apart from the organic layer 122 to increase the area of ​​the first light-emitting region EA1.

[0188] Specifically, no light is emitted in the contact area between the reflective auxiliary layer 130 and the organic layer 122, allowing the area of ​​the light-emitting region to be reduced to the same size as the contact area between the reflective auxiliary layer 130 and the organic layer 122. Therefore, the front and side light-emitting characteristics of the display device 100 may be degraded.

[0189] According to the present disclosure, the entire surface of the reflective auxiliary layer 130 of the display device 100 can be surrounded by a dam 131 and separated from the organic layer 122 by the dam 131, so that there is no contact area between the reflective auxiliary layer 130 and the organic layer 122.

[0190] A portion of the light emitted from the light-emitting diode ED, L1, is released from the organic layer 122 toward the second electrode 123 to reach the outside of the display device 100.

[0191] Another portion of the light emitted from the light-emitting diode ED (ED) passes through the reflective auxiliary layer 130 and the dam 131 disposed in the recess 115 of the third planarization layer 113 to reach the first electrode 121. This other portion of the light emitted from the ED is reflected by the first electrode 121, which includes a reflective electrode, to be released to the outside of the display device 100. By doing so, the light extraction efficiency of the display device 100 can be improved.

[0192] Another portion of the light emitted from the light-emitting diode ED, L2, passes through the dam 131 to reach the reflective auxiliary layer 130. Therefore, the reflective auxiliary layer 130 can be used to reduce the amount of light that is irregularly reflected at the interface between the first electrode 121 and the reflective auxiliary layer 130 and thus trapped and not released to the outside of the display device 100.

[0193] That is, the reflective auxiliary layer 130 is used to increase the amount of light reaching the reflective electrode included in the first electrode 121, so as to increase the amount of light reflected from the first electrode 121 to be extracted to the outside of the display device 100, thereby improving the front brightness and viewing angle brightness.

[0194] Another portion of the light emitted from the LED (ED) L2 can be emitted into the third emitting region EA3 or the second emitting region EA2. Furthermore, in some cases, another portion of the light emitted from the LED (ED) L2 can be emitted into the first emitting region EA1.

[0195] When light extraction efficiency decreases, high power consumption is required to increase the brightness of the display device 100. However, in the display device 100 according to an exemplary embodiment of the present disclosure, the first electrode 121 disposed on a portion of the protrusion 114 and the recess 115 of the third planarization layer 113 by the light-emitting diode ED improves the light extraction efficiency of the display device 100. Furthermore, the reflective auxiliary layer 130 overlapping the edges of the first electrode 121 increases the amount of light reflected from the first electrode 121 to be released to the outside of the display device 100. Therefore, the light extraction efficiency of the front and side surfaces of the display device 100 can be further improved.

[0196] Figures 6A to 6C It is a graph used to compare the reflectivity of the first electrode according to comparative embodiment 1 and the reflectivity of the structure in which the first electrode and the reflective auxiliary layer are connected according to exemplary embodiment 1.

[0197] Figures 6A to 6C The reflective electrode of the first electrode according to Comparative Embodiment 1 comprises aluminum (Al) and has a thickness of 150 nm. Figures 6A to 6C The reflective electrode of the first electrode according to exemplary embodiment 1 comprises aluminum (Al), the thickness of the reflective electrode is 150 nm, and the thickness of the reflective auxiliary layer disposed on the reflective electrode is 100 nm. Figures 6A to 6C The figure was obtained by measuring the reflectivity of the front surface to light with visible wavelengths at angles of 30° to 60°.

[0198] Reference Figures 6A to 6C It is understood that, for the front surface at 30° to 60°, for light with visible wavelengths, the structure wherein the first electrode according to exemplary embodiment 1 and the reflective auxiliary layer on the first electrode have a higher reflectivity than the first electrode according to comparative embodiment 1.

[0199] Specifically, it is understood that at an angle of 30° to 60°, for wavelengths of 550 nm or higher, the structure wherein the first electrode according to exemplary embodiment 1 and the reflective auxiliary layer on the first electrode have a much higher reflectivity than the first electrode according to comparative embodiment 1.

[0200] It is understood that, at an angle of 45°, for the entire visible light wavelength, the structure wherein the first electrode according to exemplary embodiment 1 and the reflective auxiliary layer on the first electrode have a higher reflectivity than the first electrode according to comparative embodiment 1.

[0201] That is, the reflective auxiliary layer 130 can increase the amount of light reaching the reflective electrode of the first electrode 121, thereby increasing the amount of light reflected by the reflective electrode of the first electrode 121.

[0202] Therefore, the display device 100 including the reflective auxiliary layer 130 can increase not only the front brightness, but also the side brightness (or viewing angle brightness). In addition, even when viewing the display device 100 from a certain direction, viewing angle glare that is perceived as a glare due to low brightness can be suppressed.

[0203] Figure 7 This is a schematic diagram illustrating the laminated structure of a first electrode of a light-emitting diode and a reflective auxiliary layer included in a display device according to an exemplary embodiment of the present disclosure.

[0204] Reference Figure 7 The reflective auxiliary layer 130 may be disposed in at least a portion of the first electrode 121 of the light-emitting diode ED.

[0205] The first electrode 121 of the light-emitting diode (ED) can be formed with a multilayer structure. The first electrode 121 may include a first sub-electrode 121a, a second sub-electrode 121b disposed on the first sub-electrode 121a, and a third sub-electrode 121c disposed on the second sub-electrode 121b.

[0206] The first sub-electrode 121a and the third sub-electrode 121c may contain the same material.

[0207] For example, the first sub-electrode 121a and the third sub-electrode 121c may comprise a transparent conductive material. The first sub-electrode 121a and the third sub-electrode 121c may comprise at least one of indium tin oxide (ITO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO), but are not limited thereto.

[0208] The second sub-electrode 121b may contain a reflective conductive material. For example, the second sub-electrode 121b may contain any of the following: metals, such as aluminum (Al), gold (Au), silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), and titanium (Ti), or alloys thereof, but not limited thereto.

[0209] The reflective auxiliary layer 130 can be disposed on the third sub-electrode 121c.

[0210] That is, the third sub-electrode 121c can be disposed between the reflective auxiliary layer 130 and the second sub-electrode 121b containing reflective conductive material.

[0211] The amount of light reflected by the second sub-electrode 121b can vary depending on the thickness of the third sub-electrode 121c disposed between the second sub-electrode 121b and the reflective auxiliary layer 130, which will be referenced to... Figure 8A summary will be provided. Furthermore, the thickness H of the reflective auxiliary layer 130 disposed on the third sub-electrode 121c can be varied, allowing for simultaneous improvement of the display device's color reproduction and brightness by adjusting the thickness, which will be summarized with reference to FIG9.

[0212] Figure 8 The graph was obtained by measuring the reflectivity of the second sub-electrode based on the thickness of the third sub-electrode.

[0213] exist Figure 8 In the middle, the structure of the first electrode 121 and the reflective auxiliary layer 130 used to measure the reflectivity of the second sub-electrode 121b is the same as that of the first electrode 121 and the reflective auxiliary layer 130. Figure 7 The structure shown is the same.

[0214] Reference Figure 8 It is understood that when the reflectivity of the second sub-electrode 121b is measured by adjusting the thickness of the third sub-electrode 121c in the range of 2 nm to 10 nm, the greater the thickness of the third sub-electrode 121c, the worse the reflectivity of the second sub-electrode 121b.

[0215] The thickness of the third sub-electrode 121c of the first electrode 121 of the display device 100 according to this disclosure can be from 6 nm to 10 nm.

[0216] When the thickness of the third sub-electrode 121c is less than 6 nm, the amount of light reaching the second sub-electrode 121b increases, but the resistance of the third sub-electrode 121c may increase.

[0217] When the thickness of the third sub-electrode 121c exceeds 10 nm, the amount of light reaching the second sub-electrode 121b decreases, thereby reducing the amount of light reflected by the second sub-electrode 121b and the amount of light extracted to the outside of the display device 100. Therefore, the front brightness and side brightness characteristics may deteriorate.

[0218] The thickness of the third sub-electrode 121c of the first electrode 121 included in the exemplary embodiment of the present disclosure is 6 nm to 10 nm, which increases the amount of light reaching the second sub-electrode 121b with appropriate resistance for driving the light-emitting diode ED.

[0219] Figure 9A and Figure 9B This is a graph showing the reflectivity of a reflective auxiliary layer disposed in the active region of a display device according to an exemplary embodiment of the present disclosure, with respect to wavelength.

[0220] First, refer to Figure 9A It is understood that when reflective auxiliary layers 130 of various thicknesses are set on... Figure 7When the first electrode 121 of the light-emitting diode ED is placed on the structure, it is similar to a structure in which no reflective auxiliary layer is disposed (see [reference]). Figure 9A Compared to the 0 nm reflective auxiliary layer (Figure 1), the reflectivity in the visible light wavelength band is high.

[0221] Specifically, when the thickness of the reflective auxiliary layer 130 is 110 nm to 170 nm or less, the reflectivity is high in the wavelength band of 455 nm to 520 nm.

[0222] In addition, refer to Figure 9B It is understood that when the thickness of the reflective auxiliary layer 130 is 100 nm or less, it is similar to a structure in which no reflective auxiliary layer is provided (see [reference]). Figure 9B Compared to the 0 nm reflective auxiliary layer (Figure 130), the reflectivity in the visible light wavelength band is low. In other words, when the thickness of the reflective auxiliary layer 130 is 100 nm or less, the light extraction efficiency of the display device may decrease.

[0223] In a display device 100 according to an exemplary embodiment of the present disclosure, the thickness of the reflective auxiliary layer 130 is 110 nm to 170 nm or less to allow light in the wavelength range of 455 nm to 520 nm to reach the first electrode 121. Therefore, color reproduction can be improved, and brightness can be increased to reduce power consumption.

[0224] Figure 10 This is a schematic plan view illustrating a sub-pixel structure disposed in the active region of a display device according to another exemplary embodiment of the present disclosure.

[0225] Figure 11 It is along Figure 10 The cross-sectional view taken from line CD.

[0226] and Figure 3 and Figure 4 Compared to the display device 100, Figure 10 and Figure 11 The display device 200 has the following structure: a structure 240 is provided in the recess 115 of the third planarization layer 113, and the surface shapes of the configurations provided on the structure 240 are different, but other configurations are substantially the same. Therefore, redundant descriptions will be omitted.

[0227] The structure 240 disposed in the recess 115 of the third planarization layer 113 can overlap the first light-emitting region EA1.

[0228] Structure 240 can be configured to be spaced apart from the reflective auxiliary layer 130.

[0229] In the cross-sectional view, a portion of the top surface of structure 240 may extend to the first direction DR1, and another portion of the top surface of structure 240 may extend between the first direction DR1 and a second direction DR2 intersecting the first direction DR1. Here, the first direction DR1 may be a direction perpendicular to the direction in which the first buffer layer BUF is laminated on the substrate 110, and the second direction DR2 may be the same direction as the direction in which the first buffer layer BUF is disposed on the substrate 110.

[0230] Specifically, the central region of the top surface of structure 240 may extend in the first direction DR1, and the edge region of the top surface of structure 240 may extend in the direction between the first direction DR1 and the second direction DR2. Here, the top surface located at the edge of the top surface of structure 240 may extend in the form of a curve or a straight line.

[0231] The first electrode 121, organic layer 122, and second electrode 123 of the light-emitting diode ED disposed on the structure 240 can be formed along the surface shape of the structure 240 in the recess 115 of the third planarization layer 113. In addition, the first encapsulation layer 141 can also be formed along the surface shape of the structure 240 in the recess 115 of the third planarization layer 113.

[0232] Specifically, in the region where the top surface of the structure 240 extends in the first direction DR1, the top surfaces of the first electrode 121, the organic layer 122, the second electrode 123 and the first encapsulation layer 141 can also extend in the first direction DR1.

[0233] Furthermore, in the region where the top surface of the structure 240 extends in the direction between the first direction DR1 and the second direction DR2, the top surfaces of the first electrode 121, the organic layer 122, the second electrode 123, and the first encapsulation layer 141 may also extend in the direction between the first direction DR1 and the second direction DR2.

[0234] As described above, the edge (or side surface) of structure 240 extends in the direction between the first direction DR1 and the second direction DR2 to change the path, thereby allowing light emitted from the light-emitting diode ED that is not released to the front surface of the display device 200 to reach the reflective auxiliary layer 130 and the first electrode 121. Therefore, the light captured in the display device 200 is released to the outside of the display device 200 to increase the front brightness of the display device 200.

[0235] The height of structure 240 can be less than the height of the third planarization layer 113. Therefore, a portion of the light emitted from the light-emitting diode ED disposed on structure 240 reaches the first electrode 121 and the reflective auxiliary layer 130 disposed on the inclined portion 114a of the protrusion 114 of the third planarization layer 113, so as to be released to the outside of the display device 200.

[0236] Even in Figure 10 and Figure 11 The diagram shows a structure in which structure 240 overlaps a portion of the first light-emitting region EA1, but this disclosure is not limited thereto. For example, structure 240 may overlap the entire first light-emitting region EA1, or overlap at least a portion of the second light-emitting region EA2 and the entire first light-emitting region EA1.

[0237] When structure 240 overlaps at least a portion of the second light-emitting region EA2, structure 240 may overlap a portion of the reflective auxiliary layer 130 and a portion of the embankment 131.

[0238] In a display device 200 according to another exemplary embodiment of the present disclosure, the first electrode 121 of a light-emitting diode (LED) disposed on a portion of the protrusion 114 and recess 115 of the third planarization layer 113 improves the light extraction efficiency of the display device 200. Furthermore, the reflective auxiliary layer 130 overlapping the edges of the first electrode 121 increases the amount of light reflected from the first electrode 121 to be released to the outside of the display device 200. Therefore, the light extraction efficiency of the front and side surfaces of the display device 200 can be further improved.

[0239] Furthermore, according to another exemplary embodiment of the present disclosure, the display device 200 releases light captured in the display device 200 to the outside of the display device 200 through at least one structure 240 disposed in the recess 115, thereby improving the front brightness characteristics of the display device 200.

[0240] Figure 12 This is a graph comparing the viewing angle characteristics of the display devices according to Comparative Embodiment 2 and Exemplary Embodiment 2.

[0241] The display device according to comparative embodiment 2 is a general display device. Specifically, the display device according to comparative embodiment 2 has a structure in which light-emitting diodes are disposed on a planarization layer having a flat top surface. The display device according to exemplary embodiment 2 is Figure 10 and Figure 11 The display device shown in the figure.

[0242] Reference Figure 12 It is understood that the viewing angle of the display device according to Exemplary Embodiment 2 is improved more than that of the display device according to Comparative Embodiment 2.

[0243] In other words, in the case of the display device according to comparative embodiment 2, the brightness is reduced when viewed from the side, but in the case of the display device according to exemplary embodiment 2, even when viewed from the side, it can be viewed with high brightness without increasing power consumption.

[0244] At the same time, Figures 10 to 12 The present disclosure has shown a structure in which a structure 240 is provided in the recess 115 of the third planarization layer 113, but the present disclosure is not limited thereto.

[0245] The various positions and shapes of structure 240 will be referenced below. Figures 13 to 15 A review will be conducted.

[0246] Figures 13 to 15 It is a schematic cross-sectional view showing the location and shape of at least a portion of the recess of the overlapping third planarization layer.

[0247] and Figure 11 Compared to display devices, in Figures 13 to 15 In the display device, the number, position and shape of the structures are different, but other components are basically the same, so redundant descriptions will be omitted.

[0248] Reference Figures 13 to 15 A plurality of structures 240 and 242 are arranged spaced apart from each other. The light-emitting diode (ED) can be arranged along the surface shape of the plurality of spaced-apart structures 240 and 242. Therefore, the surface area of ​​the light-emitting diode (ED) can be increased.

[0249] The plurality of structures 240 and 242 can have a wide variety of shapes. For example, at least some of the structures 242 can have a semi-circular cross section, but are not limited thereto, and at least some of the structures 242 can have a semi-elliptical shape.

[0250] In addition, the other structure 240 can have the same Figure 11 The structure 240 shown in the figure has the same shape.

[0251] In the following text, for ease of description, reference numeral 240 indicates the first structure and reference numeral 242 indicates the second structure.

[0252] The plurality of structures 240 and 242 can be disposed in various locations in the region of the recess 115 of the third planarization layer 113.

[0253] A plurality of structures 240 and 242 may be disposed in the first light-emitting region EA1. However, the positions of the plurality of structures 240 and 242 are not limited thereto, and at least one of the plurality of structures 240 and 242 may overlap at least a portion of the second light-emitting region EA2.

[0254] like Figure 13 As shown, a plurality of second structures 242 can be configured to be adjacent to the edge of the recess 115 of the third planarization layer 113. In other words, the plurality of second structures 242 may not be configured in the central region of the recess 115 of the third planarization layer 113.

[0255] A plurality of second structures 242 are located at the edge of the recess 115 of the third planarization layer 113 to allow some of the light emitted from the light-emitting diode ED to reach the first electrode 121 and the reflective auxiliary layer 130 disposed on the inclined portion 114a of the third planarization layer 113. Therefore, the amount of light emitted into the lateral direction of the display device 100 is increased, thereby increasing the side brightness of the display device 100.

[0256] In addition, such as Figure 14 As shown, a plurality of second structures 242 are disposed in the edge of the recess 115 of the third planarization layer 113. When a first structure 240 is disposed in the central region of the recess 115 of the third planarization layer 113, the side brightness can be further improved by the first structure 240 and the plurality of second structures 242 disposed in the edge of the recess 115 of the third planarization layer 113.

[0257] Even in Figure 14 The diagram has shown a structure in which the height of the second structure 242 differs from the height of the first structure 240, but this disclosure is not limited thereto. The height of the second structure 242 and the height of the first structure 240 may be the same, and the height of the first structure 240 may be less than the height of the second structure 242.

[0258] In addition, such as Figure 15 As shown, a plurality of second structures 242 can be disposed in the edge and central region of the recess 115 of the third planarization layer 113, and allow some of the light emitted from the light-emitting diode ED to reach the first electrode 121 and the reflection auxiliary layer 130 disposed on the inclined portion 114a of the third planarization layer 113 not only in the edge of the recess 115 of the third planarization layer 113 but also in the central region.

[0259] Therefore, the amount of light emitted into the lateral direction of the display device increases, thereby increasing the side brightness of the display device 100.

[0260] Here, the reflective auxiliary layer 130 disposed on the inclined portion 114a of the third planarization layer 113 is used to increase the amount of light reaching the first electrode 121 disposed on the inclined portion 114a of the third planarization layer 113, and the emitted light reaching the first electrode 121 can be released to the front and side directions of the display device 100.

[0261] Therefore, the brightness of the front and side of the display device can be improved simultaneously, and as the side brightness increases, the light spot may be invisible when the display device is viewed from the side.

[0262] Figure 16 This is a schematic plan view illustrating a sub-pixel structure disposed in the active region of a display device according to yet another exemplary embodiment of the present disclosure.

[0263] Figure 17 It is along Figure 16 The cross-sectional view taken from line EF.

[0264] and Figure 3 and Figure 4 Compared to display devices, in Figure 16 and Figure 17 In the display device 300, at least one reflective auxiliary layer 330 is disposed only in a portion of the edge of the third planarization layer 113, but the other components are substantially the same, so redundant descriptions will be omitted.

[0265] The reflective auxiliary layer 330 can be disposed on a portion of the third planarization layer 113 and a portion of the first electrode 121.

[0266] In the plan view, the reflective auxiliary layer 330 can be configured to cover at least one side surface of the first electrode 121. In this case, the reflective auxiliary layer 330 can be disposed on at least one side surface of the recess 115.

[0267] For example, when the planar shape of the first electrode 121 is quadrilateral, the reflective auxiliary layer 330 can be configured to surround one or three side surfaces of the first electrode 121. In this case, the reflective auxiliary layer 330 can be disposed in a portion of the recess 115 of the third planarization layer 113, and can be disposed on a portion of the inclined portion 114a of the third planarization layer 113.

[0268] As described above, the reflective auxiliary layer 330 is configured to cover a portion of the side surface of the first electrode 121, thereby improving viewing angle characteristics at specific locations of the display device 300.

[0269] For example, set Figure 1 The reflective auxiliary layer 130 in the sub-pixels SP of the second region A2 is configured to cover a portion of the side surface of the first electrode 121 to adjust the viewing angle brightness. Therefore, a viewer viewing the display device 100 from a frontal position may feel immersed in the screen of the second region A2.

[0270] However, this is merely an example, and Figure 16 and Figure 17The structure may be included in some or all of the sub-pixels SP included in the display device 300.

[0271] Figure 18 This is a cross-sectional view showing a sub-pixel structure disposed in the active region of a display device according to yet another exemplary embodiment of the present disclosure.

[0272] and Figure 4 Compared to display devices, in Figure 18 In the display device 400, the reflective auxiliary layer applied to at least one sub-pixel has a thickness that varies in each region, but other components are substantially the same, so redundant descriptions will be omitted.

[0273] The first electrode 121 of the light-emitting diode ED can be disposed in a portion of the recess 115 of the third planarization layer 113, the entire inclined portion 114a of the protrusion 114 of the third planarization layer 113, and a portion of the flat portion 114b.

[0274] The reflective auxiliary layer 430 may be disposed on a portion of the top surface of the first electrode 121 and at least a portion of the flat portion 114b of the protrusion 114 of the third planarization layer 113.

[0275] The reflective auxiliary layer 430 can be configured to surround the edge of the first electrode 121.

[0276] The reflection auxiliary layer 430 can have regions of varying thickness within a single subpixel.

[0277] For example, the sub-pixel with the reflection auxiliary layer 430 is set in Figure 1 In the second region A2, and to the left of the observer's viewpoint, the thickness of the reflective auxiliary layer 430, which includes the region of the overlapping first transistor T1, can be greater than the thickness of the reflective auxiliary layer 430, which includes the region of the overlapping second transistor T2.

[0278] However, this is merely an example, and it is sufficient for at least two portions of the reflection auxiliary layer 430 to have different thicknesses within a single subpixel.

[0279] As described above, the thickness of the reflection auxiliary layer 430 is adjusted even within a single subpixel to achieve a good level of viewing angle brightness.

[0280] Figure 19 This is a cross-sectional view showing a plurality of sub-pixel structures disposed in the active region of a display device according to yet another exemplary embodiment of the present disclosure.

[0281] Figure 19The display device 500 has a structure in which reflective auxiliary layers 530a, 530b, and 530c are disposed in at least three sub-pixels SP1, SP2, and SP3, but other components are different. Figure 4 The display devices are basically the same, so redundant descriptions will be omitted.

[0282] The display device 500 may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. The first sub-pixel SP1 may include a first light-emitting diode ED1 that emits a first light, the second sub-pixel SP2 may include a second light-emitting diode ED2 that emits a second light of a different color than the first light, and the third sub-pixel SP3 may include a third light-emitting diode ED3 that emits a third light of a different color than the first light and the second light.

[0283] The first light-emitting diode ED1 may include a first electrode 521a, an organic layer 522a, and a second electrode 523a.

[0284] The second light-emitting diode ED2 may include a first electrode 521b, an organic layer 522b, and a second electrode 523b.

[0285] The third light-emitting diode ED3 may include a first electrode 521c, an organic layer 522c, and a second electrode 523c.

[0286] The first light-emitting diode ED1 can be a light-emitting diode that emits blue light, the second light-emitting diode ED2 can be a light-emitting diode that emits green light, and the third light-emitting diode ED3 can be a light-emitting diode that emits red light, but this disclosure is not limited thereto.

[0287] The first reflective auxiliary layer 530a may be disposed on a portion of the first electrode 521a of the first light-emitting diode ED1 and a portion of the third planarization layer 113.

[0288] The second reflective auxiliary layer 530b can be disposed on a portion of the first electrode 521b of the second light-emitting diode ED2 and a portion of the third planarization layer 113.

[0289] The third reflective auxiliary layer 530c can be disposed on a portion of the first electrode 521c of the third light-emitting diode ED3 and a portion of the third planarization layer 113.

[0290] The first reflective auxiliary layer 530a may be configured to cover the edge of the first electrode 521a of the first light-emitting diode ED1, and may be configured to extend to a portion of the top surface of the third planarization layer 113.

[0291] Furthermore, the first reflective auxiliary layer 530a may overlap a portion of the recess 115 of the third planarization layer 113.

[0292] The second reflective auxiliary layer 530b can be configured to cover the edge of the first electrode 521b of the second light-emitting diode ED2, and can be configured to extend to a portion of the top surface of the third planarization layer 113.

[0293] Furthermore, the second reflective auxiliary layer 530b may overlap a portion of the recess 115 of the third planarization layer 113.

[0294] The third reflective auxiliary layer 530c can be configured to cover the edge of the first electrode 521c of the third light-emitting diode ED3, and can be configured to extend to a portion of the top surface of the third planarization layer 113.

[0295] In addition, the third reflective auxiliary layer 530c may overlap a portion of the recess 115 of the third planarization layer 113.

[0296] Each of the first reflective auxiliary layer 530a, the second reflective auxiliary layer 530b, and the third reflective auxiliary layer 530c can overlap the second light-emitting region EA2 and the third light-emitting region EA3 of each sub-pixel SP1, SP2, SP3.

[0297] The first reflective auxiliary layer 530a can be spaced apart from the organic layer 522a of the first light-emitting diode ED1 disposed in the recess 115 of the third planarization layer 113. The second reflective auxiliary layer 530b can be spaced apart from the organic layer 522b of the second light-emitting diode ED2 disposed in the recess 115 of the third planarization layer 113. The third reflective auxiliary layer 530c can be spaced apart from the organic layer 522c of the third light-emitting diode ED3 disposed in the recess 115 of the third planarization layer 113.

[0298] The thicknesses of the first reflective auxiliary layer 530a, the second reflective auxiliary layer 530b, and the third reflective auxiliary layer 530c can be different. For example, the thickness H5 of the third reflective auxiliary layer 530c can be greater than the thickness H3 of the first reflective auxiliary layer 530a and the thickness H4 of the second reflective auxiliary layer 530b, and the thickness H4 of the second reflective auxiliary layer 530b can be greater than the thickness H3 of the first reflective auxiliary layer 530a.

[0299] Here, the thicknesses H3, H4, and H5 of the first to third reflective auxiliary layers 530a, 530b, and 530c can refer to the shortest length in the same direction as the direction in which the first buffer layer BUF is laminated on the substrate 110.

[0300] For example, the thickness of the first reflective auxiliary layer 530a can be 120 nm to 140 nm, the thickness of the second reflective auxiliary layer 530b can be 140 nm to 160 nm, and the thickness of the third reflective auxiliary layer 530c can be 180 nm to 200 nm.

[0301] That is, in the sub-pixels SP1, SP2 and SP3 that emit light of different wavelength bands, reflective auxiliary layers 530a, 530b and 530c with different thicknesses can be provided.

[0302] Specifically, when different light is emitted from the first sub-pixel to the third sub-pixel SP1, SP2 and SP3, the reflective auxiliary layers 530a, 530b and 530c can have different thicknesses. The reflective auxiliary layers 530a, 530b and 530c increase the amount of light reaching the reflective electrodes (e.g., second sub-electrodes) included in the first electrodes 521a, 521b and 521c disposed in the first sub-pixel to the third sub-pixel SP1, SP2 and SP3.

[0303] The first sub-pixel to the third sub-pixel SP1, SP2 and SP3 can be set to Figure 1 It can be set in the first region A1 shown, and can also be set in the second region A2.

[0304] exist Figure 19 In the display device 500 shown according to yet another exemplary embodiment of the present disclosure, the first to third reflective auxiliary layers 530a, 530b, and 530c disposed in the first to third sub-pixels SP1, SP2, and SP3 have different thicknesses to optimize the amount of light reaching the first electrodes 521a, 521b, and 521c disposed in the first to third sub-pixels SP1, SP2, and SP3. By doing so, color reproduction can be improved even if light of different wavelength bands is emitted to the outside of the display device 500, and front brightness and side brightness can be improved.

[0305] This effect will refer to Figures 20A to 20C The following is a detailed overview.

[0306] Figure 20A It is a graph comparing the reflectance of the blue wavelength band of the display device according to Comparative Embodiment 3 and the reflectance of the blue wavelength band of the display device according to Exemplary Embodiment 3.

[0307] Figure 20B It is a graph comparing the reflectance of the green wavelength band of the display device according to Comparative Embodiment 3 and the reflectance of the green wavelength band of the display device according to Exemplary Embodiment 3.

[0308] Figure 20CIt is a graph comparing the reflectance of the red wavelength band of the display device according to Comparative Embodiment 3 and the reflectance of the red wavelength band of the display device according to Exemplary Embodiment 3.

[0309] The display device according to comparative embodiment 3 is a general display device. Specifically, the display device according to comparative embodiment 3 has a structure in which a light-emitting diode is disposed on a planarization layer having a flat top surface. The display device according to exemplary embodiment 3 is... Figure 17 The display device shown in the figure.

[0310] Reference Figures 20A to 20C It is understood that, in the blue, green and red wavelength bands, the reflectivity of the display device according to Exemplary Embodiment 3 is higher than that of the display device according to Comparative Embodiment 3.

[0311] In the display device according to exemplary embodiment 3, the thickness of the first reflective auxiliary layer 530a is 120 nm to 140 nm, so that a large amount of light in the blue wavelength band reaches the first electrode 521a of the first light-emitting diode ED1 to improve the color reproduction of blue and increase brightness.

[0312] In addition, the thickness of the second reflective auxiliary layer 530b is 140 nm to 160 nm, so that a large amount of light in the green wavelength band reaches the first electrode 521b of the second light-emitting diode ED2, thereby improving the color reproduction of green and increasing brightness.

[0313] In addition, the thickness of the third reflective auxiliary layer 530c is 180 nm to 200 nm, which allows a large amount of light in the red wavelength band to reach the first electrode 521c of the third light-emitting diode ED3, thereby improving the color reproduction of red and increasing brightness.

[0314] When a reflective auxiliary layer of the same thickness is applied to subpixels that emit light of different colors, color reproducibility can be improved in subpixels that emit light of a specific wavelength band, but brightness may be degraded.

[0315] For example, when a third reflective auxiliary layer 530c with the same thickness as the first reflective auxiliary layer 530a and the second reflective auxiliary layer 530b disposed in the first sub-pixel SP1 and the second sub-pixel SP2 is provided in the third sub-pixel SP3 which includes the third light-emitting diode ED3 that emits red light, the color reproduction of red can be improved, but the brightness may be degraded.

[0316] However, similar to the display device according to exemplary embodiment 3, the first to third reflective auxiliary layers 530a, 530b and 530c disposed in the first to third sub-pixels SP1, SP2 and SP3 are configured to have different thicknesses to improve the color reproduction of the first to third sub-pixels SP1, SP2 and SP3 and improve the brightness.

[0317] Exemplary embodiments of this disclosure can also be described as follows:

[0318] According to one aspect of this disclosure, a display device is provided. The display device includes a substrate comprising a plurality of subpixels. The display device further includes a planarization layer disposed on the substrate and including recesses and protrusions. The display device further includes a first electrode disposed to cover a portion of the protrusions and the recesses. The display device further includes a reflective auxiliary layer disposed in a portion of the recesses and covering at least a portion of the edge of the first electrode. The display device further includes a dam disposed on a portion of the top surface of the first electrode and on the reflective auxiliary layer. The display device further includes an organic layer disposed on the top surface of the first electrode. The display device further includes a second electrode disposed on the dam and the organic layer.

[0319] The embankment can cover the top and side surfaces of the reflective auxiliary layer.

[0320] The reflective auxiliary layer can be disposed in a portion of the recess, the inclined portion of the protrusion, and a portion of the flat portion of the protrusion.

[0321] The reflective auxiliary layer may not overlap with the portion of the top surface of the first electrode that is disposed in the recess.

[0322] In the region where the top surface of the first electrode is exposed, the reflective auxiliary layer may not overlap with the first electrode.

[0323] The reflective auxiliary layer and the organic layer can be spaced apart from each other in the recess.

[0324] The embankment can be set between the reflective auxiliary layer and the organic layer in the concave part.

[0325] The display device may include at least one structure disposed on a planarization layer, and the at least one structure may be disposed in a recess.

[0326] The first electrode may be disposed on at least one structure, and at least one structure shall not overlap.

[0327] At least one structure may have an elliptical or semi-elliptical shape in cross section, and a portion of the top surface of at least one structure may extend in a first direction in cross section, and another portion may extend in a second direction different from the first direction.

[0328] The reflective auxiliary layer can be disposed in at least one of the plurality of sub-pixels, and the reflective auxiliary layer can be disposed on a portion of the edge of the first electrode.

[0329] The substrate may include curved regions and flat regions, and in a plurality of sub-pixels disposed in the curved regions, a reflective auxiliary layer may be disposed on a portion of the edge of the first electrode.

[0330] The substrate may include curved regions and flat regions, and in the plurality of sub-pixels disposed in the curved regions, the reflective auxiliary layer may include at least two or more portions with different thicknesses.

[0331] The plurality of sub-pixels may include a first sub-pixel, a second sub-pixel that emits light of a color different from that of the first sub-pixel, and a third sub-pixel that emits light of a color different from that of the second sub-pixel. The reflection auxiliary layer may include a first reflection auxiliary layer, a second reflection auxiliary layer, and a third reflection auxiliary layer. The first reflection auxiliary layer may be disposed in the first sub-pixel, the second reflection auxiliary layer may be disposed in the second sub-pixel, and the third reflection auxiliary layer may be disposed in the third sub-pixel. The thicknesses of the first reflection auxiliary layer, the second reflection auxiliary layer, and the third reflection auxiliary layer may be different from each other.

[0332] The first sub-pixel can emit blue light, the second sub-pixel emits green light, and the third sub-pixel emits red light. The thickness of the third reflective auxiliary layer can be greater than the thickness of the first reflective auxiliary layer and the thickness of the second reflective auxiliary layer, and the thickness of the second reflective auxiliary layer can be greater than the thickness of the first reflective auxiliary layer.

[0333] The thickness of the first reflective auxiliary layer can be from 120 nm to 140 nm, the thickness of the second reflective auxiliary layer can be from 140 nm to 160 nm, and the thickness of the third reflective auxiliary layer can be from 180 nm to 200 nm.

[0334] At least one of the plurality of sub-pixels may include a first light-emitting region, a second light-emitting region surrounding the first light-emitting region, and a third light-emitting region surrounding the second light-emitting region, and a reflection auxiliary layer may be disposed in a portion of the second light-emitting region and the third light-emitting region.

[0335] The reflective auxiliary layer may contain magnesium fluoride (MgF2).

[0336] The first electrode may include a first sub-electrode disposed on the planarization layer, a second sub-electrode disposed on the first sub-electrode, and a third sub-electrode disposed on the second sub-electrode. Each of the first sub-electrode and the third sub-electrode may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO). The thickness of the third sub-electrode may be 6 nm to 10 nm.

[0337] According to another aspect of this disclosure, a display device is provided. The display device includes a substrate comprising a plurality of sub-pixels. The display device also includes a planarization layer disposed on the substrate and including recesses and protrusions. The display device further includes a first electrode disposed to cover a portion of the protrusions and the recesses. The display device also includes a reflective auxiliary layer covering at least a portion of the edge of the first electrode. The display device further includes a dam disposed on a portion of the top surface of the first electrode and on the reflective auxiliary layer. The display device also includes an organic layer disposed on the top surface of the first electrode. The display device further includes a second electrode disposed on the dam and the organic layer. Furthermore, at least one of the plurality of sub-pixels includes a first light-emitting region, a second light-emitting region surrounding the first light-emitting region, and a third light-emitting region surrounding the second light-emitting region, and the reflective auxiliary layer is disposed in at least a portion of each of the second and third light-emitting regions.

[0338] The reflective auxiliary layer can be disposed in a portion of the recess, the inclined portion of the protrusion, and a portion of the flat portion of the protrusion.

[0339] The reflective auxiliary layer and the organic layer can be spaced apart from each other in the recess.

[0340] The reflective auxiliary layer can be disposed in at least one of the plurality of sub-pixels, and the reflective auxiliary layer can be disposed on a portion of the edge of the first electrode.

[0341] The plurality of sub-pixels may include a first sub-pixel, a second sub-pixel that emits light of a color different from that of the first sub-pixel, and a third sub-pixel that emits light of a color different from that of the second sub-pixel. The reflection auxiliary layer may include a first reflection auxiliary layer, a second reflection auxiliary layer, and a third reflection auxiliary layer. The first reflection auxiliary layer may be disposed in the first sub-pixel, the second reflection auxiliary layer may be disposed in the second sub-pixel, and the third reflection auxiliary layer may be disposed in the third sub-pixel. The thicknesses of the first reflection auxiliary layer, the second reflection auxiliary layer, and the third reflection auxiliary layer may be different from each other.

[0342] While exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be construed as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: A substrate comprising multiple sub-pixels; A planarization layer disposed on the substrate and including recesses and protrusions; A first electrode is configured to cover a portion of the protrusion and the recess; A reflective auxiliary layer disposed in a portion of the recess and covering at least a portion of the edge of the first electrode; A dam is disposed on a portion of the top surface of the first electrode and on the reflective auxiliary layer; An organic layer disposed on the top surface of the first electrode; as well as The second electrode is disposed on the embankment and the organic layer.

2. The display device according to claim 1, wherein the embankment covers the top surface and side surface of the reflective auxiliary layer.

3. The display device according to claim 1, wherein the reflective auxiliary layer is disposed in a portion of the recess, the inclined portion of the protrusion, and a portion of the flat portion of the protrusion.

4. The display device according to claim 1, wherein the reflective auxiliary layer does not overlap the portion of the top surface of the first electrode disposed in the recess.

5. The display device according to claim 1, wherein, In the region where the top surface of the first electrode is exposed by the dike, the reflective auxiliary layer does not overlap the first electrode.

6. A display device, comprising: A substrate comprising multiple sub-pixels; A planarization layer disposed on the substrate and including recesses and protrusions; A first electrode is configured to cover a portion of the protrusion and the recess; A reflective auxiliary layer covering at least a portion of the edge of the first electrode; A dam is disposed on a portion of the top surface of the first electrode and on the reflective auxiliary layer; An organic layer disposed on the top surface of the first electrode; as well as The second electrode is disposed on the embankment and the organic layer. The plurality of sub-pixels includes at least one of a first light-emitting region, a second light-emitting region surrounding the first light-emitting region, and a third light-emitting region surrounding the second light-emitting region, and the reflective auxiliary layer is disposed in at least a portion of each of the second light-emitting region and the third light-emitting region.

7. The display device according to claim 6, wherein the reflective auxiliary layer is disposed in a portion of the recess, the inclined portion of the protrusion, and a portion of the flat portion of the protrusion.

8. The display device according to claim 6, wherein the reflective auxiliary layer and the organic layer are spaced apart from each other in the recess.

9. The display device of claim 6, wherein the reflective auxiliary layer is disposed in at least one of the plurality of sub-pixels, and the reflective auxiliary layer is disposed on a portion of the edge of the first electrode.

10. The display device of claim 6, wherein the plurality of sub-pixels includes a first sub-pixel, a second sub-pixel emitting light of a color different from that of the first sub-pixel, and a third sub-pixel emitting light of a color different from that of the second sub-pixel. The reflective auxiliary layer includes a first reflective auxiliary layer, a second reflective auxiliary layer, and a third reflective auxiliary layer. The first reflection auxiliary layer is disposed in the first sub-pixel, the second reflection auxiliary layer is disposed in the second sub-pixel, and the third reflection auxiliary layer is disposed in the third sub-pixel. The thicknesses of the first reflective auxiliary layer, the second reflective auxiliary layer, and the third reflective auxiliary layer are different from each other.

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