Gas distribution device of flat plate type plasma system applied to peald equipment

Abstract

The utility model provides a gas distribution device of a flat plate type plasma system applied to peald equipment, and relates to the technical field of plasma equipment. Comprising a vacuum cavity, a medium flat plate, an atmosphere side process pipeline and a vacuum side process pipeline, and the vacuum side process pipeline comprises a plurality of process gas pipe branches parallel to the medium flat plate so that ionized gas can be evenly distributed in the vacuum cavity; a plurality of gas holes with openings facing the medium window are uniformly distributed in each process gas pipe branch along the length direction of the process gas pipe branch, so that gas directly flows to the medium window after coming out of the process gas pipe branch, and continuously flows to the vacuum cavity after being rebounded by the medium window, and a gas rebounding area is just positioned in a high ionization area of plasma; and the ionization rate of the process gas is further improved. According to the scheme, the plasma distribution uniformity of the flat plate type plasma system can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of plasma equipment, in particular to a gas distribution device of a flat-plate plasma system applied to peald equipment. Background Art

[0002] There are two main types of process gas supply systems currently used in batch plasma equipment: a backplate-type multi-layered flow distribution system for uniform gas distribution and a circular flow distribution system for uniform gas distribution. The backplate-type multi-layered flow distribution system is relatively complex, typically employing a double or triple-layered flow distribution approach to achieve uniform gas distribution across the entire surface. This makes component disassembly and maintenance difficult, resulting in high maintenance costs. Due to coil layout issues, the backplate-type multi-layered flow distribution system is mostly used in plasma systems where the RF coils are spirally distributed along the sidewall of the plasma chamber. This structure has no requirements for the backplate material and can be fabricated from metal. In planar plasma systems, the RF coils are primarily located on the atmospheric side of the plasma chamber's backplate. However, the backplate material must be dielectric to ensure that RF waves can be coupled into the vacuum chamber. Therefore, this type of process gas supply system is not applicable to planar plasma systems due to material properties. The circular flow distribution system is another common method for uniform gas distribution. With this type of system, the airflow is distributed in a circular pattern around the backplate, close to the inner wall of the vacuum chamber. The airflow will converge toward the center of the vacuum chamber, and the distribution of ionized gas on the inner wall of the vacuum chamber will be uneven. Utility Model Content

[0003] The utility model discloses a process gas distribution structure of a flat-plate plasma system of a peald device, aiming to solve the problems of uneven distribution and low efficiency of plasma generated by the flat-plate plasma system.

[0004] The utility model adopts the following scheme:

[0005] A gas distribution device for a flat-plate plasma system of a peald device comprises: a vacuum chamber; and:

[0006] a dielectric plate, which is disposed on a side of the vacuum chamber away from the substrate and facing the substrate, and is used to couple radio frequency waves into the vacuum chamber, and has a plurality of dielectric windows;

[0007] an atmospheric side process pipeline, wherein the atmospheric side process pipeline is formed with at least two gas inlet branches for introducing process gas into the vacuum chamber;

[0008] A vacuum-side process pipeline is disposed inside the vacuum chamber and connected to the atmosphere-side process pipeline; the vacuum-side process pipeline includes a plurality of process gas pipe branches parallel to the dielectric plate to uniformly distribute the ionized gas in the vacuum chamber; each process gas pipe branch has a plurality of air holes evenly distributed along its length, with openings facing the dielectric window, so that the gas flows directly toward the dielectric window after exiting the process gas pipe branch and continues to flow toward the vacuum chamber after rebounding from the dielectric window, so that the gas rebound area is exactly in the high ionization area of ​​the plasma, thereby improving the ionization rate of the process gas.

[0009] Furthermore, cavity flanges are provided at both upper and lower ends of the vacuum cavity, and two atmosphere-side process pipelines are provided and respectively connected to the upper and lower cavity flanges for introducing process gas into the vacuum-side process pipelines.

[0010] Furthermore, each atmosphere-side process pipeline is provided with two of the air intake branches, and each of the air intake branches is connected to a process air pipe branch.

[0011] Furthermore, the air holes are arranged in vertical rows on the process air pipe branch, and at least two vertical rows of air holes are provided.

[0012] Furthermore, the diameter of the pores on the process gas pipe branch is 0.1 mm to 3 mm.

[0013] Furthermore, the plurality of process gas pipe branches are located in the same plane, and the plane is parallel to the plane where the medium plate is located.

[0014] Furthermore, a plurality of the process gas pipe branches are distributed at equal intervals in the vacuum chamber.

[0015] Furthermore, each of the process gas pipe branches is provided with a notch positioning structure to facilitate quick installation.

[0016] Beneficial effects:

[0017] In this solution, due to the characteristics of flat-plate plasma distribution, the gas distribution system of this application is more suitable for this type of plasma device. After the gas is branched out from the process gas pipe, it flows to the dielectric window, bounces through the dielectric window, and continues to flow to the vacuum chamber. The gas rebound area is exactly in the high ionization area of ​​the plasma, the gas is more easily ionized, and the gas ionization rate will be higher. During this rebound process, the uniform distribution of the gas will become better, especially for the gas close to the inner wall of the plasma chamber. The entire gas pipeline is easier to maintain and relatively easy to dismantle. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1This is a schematic structural diagram of a gas distribution device for a flat-plate plasma system of a peald device according to an embodiment of the present invention;

[0019] Figure 2 This is a schematic diagram of the distribution of process pipelines on the atmospheric side of a gas distribution device of a flat-plate plasma system applied to a peald device according to an embodiment of the present invention;

[0020] Figure 3 This is a side view schematic diagram of the distribution of process pipelines on the atmosphere side of a gas distribution device of a flat-plate plasma system applied to a peald device according to an embodiment of the present invention;

[0021] Figure 4 This is a schematic diagram of the distribution of process gas pipes in a gas distribution device of a flat-plate plasma system applied to a peald device according to an embodiment of the present invention;

[0022] Figure 5 This is a structural diagram of a process gas pipe branch of a gas distribution device of a flat-plate plasma system applied to a peald device according to an embodiment of the present invention;

[0023] Icons: vacuum chamber 1, dielectric plate 2, dielectric window 21, atmosphere side process pipeline 3, air inlet branch 31, vacuum side process pipeline 4, process gas pipe branch 41, air hole 411, notch positioning structure 412, RF coil 5, grid plate 6, chamber flange 7. DETAILED DESCRIPTION

[0024] Combine Figures 1 to 5 As shown, this embodiment provides a gas distribution device for a flat-plate plasma system applied to a peald device, comprising:

[0025] a vacuum chamber 1, wherein the vacuum chamber 1 is provided with a plasma outlet facing the substrate;

[0026] a dielectric plate 2, which is disposed on a side of the vacuum chamber away from the substrate and facing the substrate, and is used to couple radio frequency waves into the vacuum chamber, and has a plurality of dielectric windows 21;

[0027] an atmospheric side process pipeline 3, wherein the atmospheric side process pipeline 3 is formed with at least two gas inlet branches 31 for introducing process gas into the vacuum chamber;

[0028] A vacuum-side process pipeline 4 is provided inside the vacuum chamber 1 and is connected to the atmosphere-side process pipeline 3; the vacuum-side process pipeline 4 includes a plurality of process gas pipe branches 41 parallel to the dielectric plate 2 to uniformly distribute the ionized gas in the vacuum chamber 1; each process gas pipe branch 41 has a plurality of air holes 411 evenly distributed along its length, with openings facing the dielectric window 21, so that the gas flows directly toward the dielectric window 21 after exiting the process gas pipe branch 41, and continues to flow toward the vacuum chamber 1 after rebounding from the dielectric window 21, so that the gas rebound area is exactly in the high ionization area of ​​the plasma, thereby improving the ionization rate of the process gas.

[0029] Combine Figure 1 As shown, in this embodiment, the flat-plate plasma system further includes a vacuum chamber, an RF coil 5, a dielectric plate 2, and a grid plate 6; wherein the dielectric plate 2 is arranged outside the vacuum chamber and facing the substrate, and is provided with a dielectric window 21 for coupling radio frequency waves into the vacuum chamber; the grid plate 6 is arranged on the other side of the vacuum chamber opposite to the dielectric window 21, and is used to control the bombardment density of the plasma on the substrate to reduce the temperature rise of the substrate; the air inlet pipe extends into the vacuum chamber to provide the reaction gas to the vacuum chamber; the RF coil 5 is suitable for providing an excitation electromagnetic field to the vacuum chamber under the drive of an RF power supply to ionize the reaction gas to form plasma, and the RF coil 5 is a flat-plate structure installed on the side of the dielectric plate away from the vacuum chamber, so that the plasma is evenly distributed on the dielectric plate 2 facing the substrate. The distance between the dielectric plate 2 and the grid plate 6 is 40mm to 200mm. This distance brings the plasma source and substrate closer together, resulting in higher plasma transmission efficiency. To achieve the same film performance, the power input to the plasma generator can be relatively low. The RF coil 5 is connected to an RF power supply and is located outside the dielectric plate 2. The RF coil 5 is flat and laid on the surface of the dielectric plate 2, or embedded within the dielectric plate 2. The entire RF coil 5 is arranged in a spiral, centrally symmetrical structure. This not only increases the inductance range, but also makes the generated plasma distribution more uniform and concentrated, facilitating improved plasma uniformity. The RF coil 5 is concentrated on the plane of the dielectric plate 2, forming a spiral and centrally symmetrical structure.

[0030] Combine Figures 1 to 4As shown, chamber flanges 7 are provided at both the upper and lower ends of the vacuum chamber 1. Two atmospheric-side process pipelines 3 are provided, connected to the upper and lower chamber flanges 7, respectively, for introducing process gas into the vacuum-side process pipeline 4. In this embodiment, each atmospheric-side process pipeline 3 is provided with two inlet branches 31, each connected to a process gas branch 41. Consequently, four process gas branches 41 are arranged in parallel within the vacuum chamber. It should be noted that the atmospheric-side process pipeline 3 is primarily designed based on the principle of binary gas separation, while the vacuum-side process pipeline 4 utilizes four process gas branches 41. However, this is not limiting; two or eight process gas branches 41 may also be employed. The multiple process gas branches 41 are located in the same plane, parallel to the plane of the dielectric plate 2. This arrangement ensures that the process gas introduced from the process gas branches 41 is at the same distance from the dielectric window 21 on the dielectric plate 2, ensuring uniform ionization of the gas. Furthermore, the plurality of process gas pipe branches 41 are distributed at equal intervals in the vacuum chamber 1 to further improve the uniformity of the process gas after being introduced into the vacuum chamber 1 .

[0031] Combine Figure 5 As shown, in a preferred embodiment, a notched positioning structure 412 is provided at the end of the process gas pipe branch 41. This allows multiple process gas pipe branches 41 to be combined into a longer process gas pipe, facilitating quick installation. However, this method is not limited to directional and repeatable positioning; other methods such as pins and latches may also be used for positioning.

[0032] Each process gas branch 41 is provided with air holes 411 opening toward the dielectric window 21. The air holes 411 are evenly distributed along the length of the process gas branch 41, forming a vertical arrangement. At least two vertical rows of air holes 411 are provided on each process gas branch 41, allowing for a wider range of process gas introduction and a higher gas density. The diameter of the air holes 411 in the process gas branch 41 ranges from 0.1 mm to 3 mm, preferably 0.1 mm. Due to the smaller diameter of the process gas branch 41, the air holes 411 are also relatively small. The smaller the diameter of the air holes 411, the greater the velocity of the gas ejected. This allows it to flow toward the dielectric window 21 faster, bounce off the dielectric window 21, and continue toward the vacuum chamber 1 at a faster rebound speed. The gas rebound region is located in the highly ionized region of the plasma, making the gas more easily ionized and resulting in a higher ionization rate. This rebound process improves the uniform distribution of the process gas, especially for gas located close to the inner wall of the plasma chamber.

[0033] In this solution, due to the characteristics of flat-plate plasma distribution, the gas distribution system of this application is more suitable for this type of plasma device. After the gas exits the process gas pipe branch 41, it flows to the dielectric window 21, bounces off the dielectric window 21, and continues to flow to the vacuum chamber 1. The gas rebound area is located in the highly ionized area of ​​the plasma, making the gas more easily ionized and having a higher ionization rate. During this rebound process, the uniform distribution of the gas will be improved, especially for the gas that is only around the inner wall of the plasma chamber. The entire gas pipeline is easier to maintain and relatively easy to dismantle.

[0034] The gas distribution structure of the embodiment is more suitable for a flat-plate plasma generating system, and can effectively improve the plasma concentration uniformity of the flat-plate plasma generating system, thereby helping to improve the uniformity of substrate reaction.

[0035] It should be understood that the above are only preferred implementations of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention fall within the protection scope of the present invention.

[0036] The above description of the drawings used in the implementation manner only shows certain embodiments of the present invention and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

Claims

1. A gas distribution device for a flat-plate plasma system of a peald device, comprising a vacuum chamber, characterized in that: Also includes: a dielectric plate, which is disposed on a side of the vacuum chamber away from the substrate and facing the substrate, and is used to couple radio frequency waves into the vacuum chamber, and has a plurality of dielectric windows; an atmospheric side process pipeline, wherein the atmospheric side process pipeline is formed with at least two gas inlet branches for introducing process gas into the vacuum chamber; A vacuum-side process pipeline is disposed inside the vacuum chamber and connected to the atmosphere-side process pipeline; the vacuum-side process pipeline includes a plurality of process gas pipe branches parallel to the dielectric plate to uniformly distribute the ionized gas in the vacuum chamber; each process gas pipe branch has a plurality of air holes evenly distributed along its length, with openings facing the dielectric window, so that the gas flows directly toward the dielectric window after exiting the process gas pipe branch and continues to flow toward the vacuum chamber after rebounding from the dielectric window, so that the gas rebound area is exactly in the high ionization area of ​​the plasma, thereby improving the ionization rate of the process gas.

2. The gas distribution device for a flat-plate plasma system of a peald device according to claim 1, characterized in that: Cavity flanges are provided at both upper and lower ends of the vacuum cavity. Two atmosphere-side process pipelines are provided and are respectively connected to the upper and lower cavity flanges for introducing process gas into the vacuum-side process pipelines.

3. The gas distribution device for a flat-plate plasma system of a peald device according to claim 2, characterized in that: Each atmosphere-side process pipeline is provided with two air inlet branches, and each air inlet branch is connected to a process air pipe branch.

4. The gas distribution device for a flat-plate plasma system of a peald device according to claim 1, characterized in that: The air holes are arranged in a vertical row on the process air pipe branch, and at least two vertical rows of air holes are provided.

5. The gas distribution device for a flat-plate plasma system of a peald device according to claim 4, characterized in that: The diameter of the air holes on the process air pipe branch is 0.1mm to 3mm.

6. The gas distribution device for a flat-plate plasma system of a peald device according to claim 1, characterized in that: The plurality of process gas pipe branches are located in the same plane, and the plane is parallel to the plane where the medium plate is located.

7. The gas distribution device for a flat-plate plasma system of a peald device according to claim 6, characterized in that: The plurality of process gas pipe branches are distributed in the vacuum chamber at equal intervals.

8. The gas distribution device for a flat-plate plasma system used in a peald device according to claim 1, characterized in that: Each of the process gas pipe branches is provided with a notch positioning structure to facilitate quick installation.

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