Cleaning process monitoring device and deposition equipment

Abstract

The utility model provides a cleaning process monitoring device and deposition equipment, and the device mainly comprises a pipeline which is used for a monitored gas to pass through; the infrared light source emitter is arranged at one end of the pipeline, the infrared light source emitter is used for emitting infrared light, and the wavelength of the infrared light comprises a first wavelength and a second wavelength; the dual-channel pyroelectric detector is arranged at the other end of the pipeline, and the dual-channel pyroelectric detector is configured to generate a first voltage based on the infrared light of the first wavelength penetrating through the pipeline; generating a second voltage based on the infrared light of the second wavelength passing through the pipeline; determining the real-time concentration of the monitored gas according to the first voltage and the second voltage; and the controller is electrically connected with the dual-channel pyroelectric detector, and the controller is configured to generate a cleaning process stopping instruction when the real-time concentration is smaller than the preset concentration. The dry cleaning effect can be effectively monitored.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a cleaning process monitoring device and a deposition equipment. BACKGROUND

[0002] For a furnace tube long film process, a chemical vapor deposition film process or a rapid thermal process, in the process, in addition to the thin film grown on the wafer surface, the same thickness of thin film is also grown in the reaction chamber of the furnace tube module, the chemical vapor deposition module or the rapid thermal processing module. However, when the thickness of the thin film in the reaction chamber reaches a certain thickness, the thin film peeling phenomenon may occur, which increases the particle contamination of the wafer and may even cause the wafer to be scrapped. Therefore, when the cleaning condition in the reaction chamber is met, cleaning gas is introduced to dry clean the reaction chamber to eliminate the thin film in the reaction chamber.

[0003] In the related art, the cleaning degree of the reaction chamber can be indirectly judged by measuring the particle contamination degree of the control piece (required for the furnace tube long film process, the chemical vapor deposition film process or the rapid thermal process). The reaction chamber can also be disassembled by the operator to observe the cleaning degree manually. However, the above dry cleaning monitoring method cannot effectively monitor the dry cleaning effect, which may cause the cleaning to be not clean enough to increase the particle contamination degree, and may also cause the cleaning to be too much to corrode the inner wall of the reaction chamber. CONTENT OF THE UTILITY MODEL

[0004] The technical problem to be solved by the present application is that the existing dry cleaning effect cannot be effectively monitored.

[0005] To solve the above technical problem, the present application provides a cleaning process monitoring device, comprising: a pipeline, the pipeline is used for passing a monitored gas; an infrared light source emitter, the infrared light source emitter is arranged at one end of the pipeline, the infrared light source emitter is used for emitting infrared light, the wavelength of the infrared light includes a first wavelength and a second wavelength; a dual-channel pyroelectric detector, the dual-channel pyroelectric detector is arranged at the other end of the pipeline, the dual-channel pyroelectric detector is configured to generate a first voltage based on the infrared light of the first wavelength passing through the pipeline; generate a second voltage based on the infrared light of the second wavelength passing through the pipeline; determine the real-time concentration of the monitored gas according to the first voltage and the second voltage; a controller, the controller is electrically connected with the dual-channel pyroelectric detector, the controller is configured to generate a cleaning process stop instruction when the real-time concentration is less than a preset concentration.

[0006] In some embodiments of the present application, the light emitting end of the infrared light source emitter is attached to one end of the pipeline; and the light receiving end of the dual-channel pyroelectric detector is attached to the other end of the pipeline.

[0007] In some embodiments of the present application, the cleaning process monitoring device further comprises: a first fixing assembly, which is arranged outside the light emitting end of the infrared light source emitter and one end of the pipeline, and is used for fixing the infrared light source emitter and the pipeline; and a second fixing assembly, which is arranged outside the light receiving end of the dual-channel pyroelectric detector and the other end of the pipeline, and is used for fixing the dual-channel pyroelectric detector and the pipeline.

[0008] In some embodiments of the present application, the monitored gas is SiF4 gas.

[0009] In some embodiments of the present application, the wavelength range of the infrared light is 2.5-20 μm.

[0010] In some embodiments of the present application, the first wavelength is 4.86 μm, and the second wavelength is 6.50 μm.

[0011] In some embodiments of the present application, the pipeline comprises: a pipeline body; a gas inlet pipe, one end of which is connected to the first end of the pipeline body in a penetrating manner, and the other end of which is connected to the exhaust pipe of the reaction chamber; and a gas outlet pipe, one end of which is connected to the second end of the pipeline body in a penetrating manner, and the other end of which is connected to a gas purification device.

[0012] In some embodiments of the present application, the cavity length of the pipeline body is a first length, and the radius of the cross section of the pipeline body is a second length.

[0013] In some embodiments of the present application, the other end of the gas inlet pipe is connected to the exhaust pipe of the reaction chamber through a condensing device.

[0014] In some embodiments of the present application, the first length matches the propagation period of the infrared light, and the second length matches the diameter of the cross section of the exhaust pipe.

[0015] To solve the above technical problems, the present application provides a deposition device comprising the above cleaning process monitoring device

[0016] Compared with the prior art, the technical scheme of the present application sends the gas generated in the dry cleaning process into the pipeline, and monitors the real-time concentration of the monitored gas in the pipeline through the infrared light source emitter and the dual-channel pyroelectric detector. The controller is connected with the dual-channel pyroelectric detector, and the controller acquires the real-time concentration monitored by the dual-channel pyroelectric detector. When the real-time concentration is less than the preset concentration, a cleaning process stop instruction is generated. In this way, effective monitoring of the dry cleaning effect is realized. BRIEF DESCRIPTION OF DRAWINGS

[0017] The following drawings set forth in detail the exemplary embodiments disclosed in the present application. The same reference numbers in different drawings represent the same or similar elements. Those skilled in the art will appreciate that the embodiments are non-limiting, exemplary embodiments, and the drawings are for the purpose of illustration and description only, and are not intended as a definition of the scope of the present application, and other ways of implementing the inventive concept disclosed in the present application can be similarly achieved. It should be understood that the drawings are not drawn to scale.

[0018] Figure 1 is a structural schematic diagram of a cleaning process monitoring device according to some embodiments of the present application;

[0019] Figure 2 is a structural schematic diagram of a pipeline according to some embodiments of the present application;

[0020] Figure 3 is a schematic diagram of a concentration standard curve according to some embodiments of the present application;

[0021] Figure 4 is a schematic diagram of a concentration-time curve according to some embodiments of the present application;

[0022] BRIEF DESCRIPTION OF DRAWINGS DETAILED DESCRIPTION

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some examples or embodiments of the present application, and for those skilled in the art, the present application can be applied to other similar scenarios without creative labor. Unless it is obvious from the language environment or otherwise stated, the same reference numbers in the drawings represent the same structure or operation. It should be clearly understood that the drawings are for the purpose of illustration and description, and are not intended to limit the scope of the disclosure.

[0024] It should be understood that the "module", "circuit" used herein is a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0025] The terminology used in the present application is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used in the present description and the appended claims, the term "comprising" or "including" or "containing" means that the associated whole includes, but is not limited to, the specified element or elements. When used in the present description and the appended claims, the terms "comprise", "comprising", "include", "including", "contain", "containing" or variations thereof mean that the methods and compositions include, but are not limited to, the recited elements, steps, operations, elements or components, and that other features, elements, steps, operations, elements, components or groups thereof can also be present in the methods and compositions. When describing different components in the present description, the association can be direct or indirect. For example, "A and B are connected" can mean that A and B are directly connected, or A and B are indirectly connected through other components.

[0026] In the related art, the cleaning degree of the reaction chamber can be indirectly determined by measuring the particle contamination degree of the control wafer (required for the furnace tube long film process, the chemical vapor deposition film process, or the rapid thermal process). The reaction chamber can also be disassembled by the operator to manually observe the cleaning degree. However, the above dry cleaning monitoring method cannot effectively monitor the dry cleaning effect, which can cause the cleaning to be not clean enough to increase the particle contamination degree, and can also cause the cleaning to be excessive to corrode the inner wall of the reaction chamber.

[0027] Taking the silicon nitride (SiN) chemical vapor deposition film process as an example, the cleaning conditions can include at least one of the following: the film thickness reaches 350 nm, the temperature reaches 300°C, the pressure reaches 400 Torr, and the cleaning gas is fluorine gas (F2) or hydrogen fluoride (HF) with a concentration of 20%. If the chemical composition of the deposited film in the reaction chamber includes silicon trinitride (Si3N4), silicon dioxide (SiO2), and single crystal silicon (Si), then HF can be used as the cleaning gas. During the dry cleaning process, HF reacts with Si3N4, SiO2, and Si respectively to generate silicon tetrafluoride (SiF4) and other reaction products. The specific reaction equations are as follows:

[0028] Si3N4+12HF → 3SiF4↑+ 4NH3 (1)

[0029] SiO2+4HF →SiF4↑+2H2O (2)

[0030] Si+4HF→SiF4↑+2H2(3)

[0031] For the above dry cleaning process, SiF4 is the gas generated by the chemical reaction between each deposited film and the cleaning gas, so the concentration of SiF4 can be monitored to indirectly monitor the cleaning degree of the reaction chamber, and then determine the timing of stopping the cleaning process to reduce the probability of over-cleaning the inner wall of the reaction chamber.

[0032] Based on the above analysis, as Figure 1As shown, the cleaning process monitoring device provided by the embodiments of the present application can include

[0033] a pipeline 11, configured to pass the monitored gas;

[0034] an infrared light source emitter 12, arranged at one end of the pipeline, configured to emit infrared light, the wavelength of the infrared light including a first wavelength and a second wavelength;

[0035] a dual-channel pyroelectric detector 13, arranged at the other end of the pipeline, configured to generate a first voltage based on the infrared light of the first wavelength passing through the pipeline 11, generate a second voltage based on the infrared light of the second wavelength passing through the pipeline 11, and determine the real-time concentration of the monitored gas according to the first voltage and the second voltage;

[0036] a controller 14, electrically connected with the dual-channel pyroelectric detector 13, configured to generate a cleaning process stop instruction when the real-time concentration is less than a preset concentration.

[0037] In the embodiments of the present application, during the implementation of the long film process of the furnace tube, the thin film process of chemical vapor deposition or the rapid heat treatment process, the thin film of the same thickness will also be grown in the reaction chamber of the furnace tube module, the chemical vapor deposition module or the rapid heat treatment module. The thin film grown in the reaction chamber can be a silicon nitride (SiN), silicon oxide (Oxide) or polycrystalline silicon (Poly-Si) thin film. During the dry cleaning of the reaction chamber, the cleaning gas will chemically react with the thin film in the reaction chamber, and the products in the chemical reaction include various gases, such as SiF4, NH3, hydrogen (H2) and the like.

[0038] It should be noted that the cleaning gas is different (such as HF, F2, O2, etc.), the chemical composition of the thin film in the reaction chamber is different, and the types of gases included in the products are also different. For example, the cleaning gas can include a gas containing a halogen element.

[0039] In the embodiments of the present application, from the various gases included in the products, the gas with the highest absorption degree of infrared light of different wavelengths can be determined as the monitored gas.

[0040] In the embodiments of the present application, the pipeline 11 is configured to pass the various gases included in the products, and the various gases in the products include the monitored gas.

[0041] In some embodiments of the present application, in order to enable the pipeline 11 to pass the monitored gas, the pipeline is a closed multi-pass gas chamber. Specifically, as shown in Figure 2 The pipeline 11 includes:

[0042] A pipeline body 111;

[0043] An air inlet pipe 112, one end of the air inlet pipe 112 is connected with the first end of the pipeline body 111, and the other end of the air inlet pipe 112 is connected with an air outlet pipe of a reaction chamber;

[0044] An air outlet pipe 113, one end of the air outlet pipe 113 is connected with the second end of the pipeline body 111, and the other end of the air outlet pipe 113 is connected with a gas purification device.

[0045] In some embodiments of the present application, the length of the cavity of the pipeline body 111 is a first length, and the radius of the cross section of the pipeline body 111 is a second length.

[0046] In some embodiments of the present application, the first length matches the propagation period of the infrared light, and the second length matches the diameter of the cross section of the air outlet pipe.

[0047] In an embodiment of the present application, the first length is determined based on the Lambert-Beer law, so that the proportion of the monitored gas absorbed after the monitored gas is irradiated by light of a certain wavelength for the first length reaches a preset proportion, and the real-time concentration of the monitored gas at the position of the air inlet pipe 112 can be determined.

[0048] It should be noted that the Lambert-Beer law is the basic law of spectrophotometry, which describes the relationship between the strength of light absorption of a certain wavelength by a substance and the concentration and thickness of the absorbing substance.

[0049] For example, the first length can be any value in the range of 20cm-50cm, such as 25cm, 30cm, 32cm, 40cm, etc.

[0050] In an embodiment of the present application, the pipeline 11 is used to pass the monitored gas, and therefore, the second length (i.e. the radius of the cross section of the pipeline body 111) and the diameter of the air inlet pipe 112 can be set to the same order of magnitude. For example, the diameter of the air outlet pipe is 1cm, and the second length is 8cm.

[0051] In an embodiment of the present application, the material of the pipeline body 111 can be organic glass.

[0052] In the embodiments of the present application, the pipeline body 111 can be a hollow cylinder. One end of the pipeline 11 and the other end of the pipeline 11 are two bottom surfaces of the cylinder. The first end of the pipeline body 111 and the second end of the pipeline body 111 are arranged on the side surface of the cylinder.

[0053] In the embodiments of the present application, in order to save space, the exhaust pipe of the reaction chamber and the gas inlet pipe 112 can be connected in a straight connection mode and fixed by a fastener. The material of the gas inlet pipe 112 can be stainless steel. The pipe diameter of the exhaust pipe of the reaction chamber matches that of the gas inlet pipe 112.

[0054] Similarly, in order to save space, the gas purification device and the gas outlet pipe 113 can also be connected in a straight connection mode and fixed by a fastener. The gas outlet pipe 113 can be stainless steel. The pipe diameter of the gas purification device matches that of the gas outlet pipe 113.

[0055] In some embodiments of the present application, the other end of the gas inlet pipe 112 is connected to the exhaust pipe of the reaction chamber through a condensing device. In this way, the dust and water vapor in the monitored gas are reduced by the condensing device to eliminate the background noise interference caused by other gases and detection errors.

[0056] In some embodiments of the present application, the other end of the gas inlet pipe 112 is connected to the exhaust pipe of the reaction chamber through a filter screen and a condensing device in sequence. In this way, the dust and water vapor in the monitored gas are reduced by the filter screen and the condensing device to eliminate the background noise interference caused by other gases and detection errors.

[0057] In the embodiments of the present application, the monitored gas enters the pipeline body 111 from the gas inlet pipe 112, and then is discharged into the gas purification device from the gas outlet pipe 113. The gas purification device is used for harmless treatment of various gases contained in the product.

[0058] In some embodiments of the present application, the infrared light source emitter 12 can be a microsystem-based electrically modulated infrared emitter. The modulation frequency of the infrared light source emitter 12 can be 4HZ, and the emission angle can be 10° to 20°, such as 12°, 15°, 18°, and the like.

[0059] In some embodiments of the present application, the monitored gas is SiF4 gas. According to the wavelength range of the SiF4 gas that can be absorbed, a corresponding infrared light source emitter 12 is selected. The infrared light source emitter 12 can emit infrared light with a wavelength range of 2.5 μm-20 μm.

[0060] In some embodiments of the present application, a first wavelength with the highest absorption degree of SiF4 gas and a second wavelength with the lowest absorption degree of SiF4 gas are selected from the wavelength range of 2.5 μm-20 μm. It can be understood that the infrared light of the second wavelength is substantially not absorbed by SiF4 gas.

[0061] In some embodiments of the present application, the first wavelength is 4.86 μm and the second wavelength is 6.50 μm.

[0062] In some embodiments of the present application, the infrared light source emitter 12 emits the infrared light from one end of the pipeline (the bottom surface of the pipeline body 111), through the pipeline (the hollow part of the pipeline body 111), and out of the other end of the pipeline (the bottom surface of the pipeline body 111).

[0063] In some embodiments of the present application, the infrared light source emitter 12 is arranged at one end of the pipeline 11, and the light emitting end of the infrared light source emitter 12 is attached to one end of the pipeline 11; the dual-channel pyroelectric detector 13 is arranged at the other end of the pipeline 11, and the light receiving end of the dual-channel pyroelectric detector 13 is attached to the other end of the pipeline 11.

[0064] In this way, the influence of infrared light on other devices can be reduced, and the influence of other light on the received first wavelength infrared light and the received second wavelength infrared light can be reduced, thereby improving the accuracy of the real-time concentration of the monitored gas.

[0065] In some embodiments of the present application, the cleaning process monitoring device further comprises:

[0066] A first fixing assembly is arranged outside the light emitting end of the infrared light source emitter 12 and one end of the pipeline 11, and the first fixing assembly is used to fix the infrared light source emitter 12 and the pipeline 11.

[0067] A second fixing assembly is arranged outside the light receiving end of the dual-channel pyroelectric detector 13 and the other end of the pipeline 11, and the second fixing assembly is used to fix the dual-channel pyroelectric detector 13 and the pipeline 11.

[0068] In this way, the relative positions of the pipeline 11, the infrared light source emitter, and the dual-channel pyroelectric detector 13 are fixed, avoiding gaps between the light emitting end of the infrared light source emitter 12 and one end of the pipeline 11, and between the light receiving end of the dual-channel pyroelectric detector 13 and the other end of the pipeline 11. This reduces the impact of infrared light on other devices and also reduces the influence of other light on the received first wavelength infrared light and the received second wavelength infrared light, thereby improving the accuracy of the real-time concentration of the monitored gas.

[0069] In this embodiment, the dual-channel pyroelectric detector 13 determines the real-time concentration of the monitored gas based on the Lambert-Beer law. Infrared light emitted by the infrared light source emitter 12 enters from one end of the pipe 11, passes through the pipe 11 to uniformly diffuse the monitored gas, and exits from the other end of the pipe 11, illuminating the light receiving end of the dual-channel pyroelectric detector 13. During light propagation, the monitored gas absorbs infrared light of different wavelengths (first and second wavelengths) to different degrees; therefore, the dual-channel pyroelectric detector 13 may include a first filter and a second filter.

[0070] Specifically, infrared light emitted from the other end of the pipe 11 passes through a first filter to remove infrared light of wavelengths other than the first wavelength. The dual-channel pyroelectric detector 13 acquires the first light intensity of the infrared light of the first wavelength passing through the pipe 11 and generates a first voltage based on the first light intensity. Infrared light emitted from the other end of the pipe 11 passes through a second filter to remove infrared light of wavelengths other than the second wavelength. The dual-channel pyroelectric detector 13 acquires the second light intensity of the infrared light of the second wavelength passing through the pipe 11 and generates a second voltage based on the second light intensity. Subsequently, the dual-channel pyroelectric detector 13 determines the real-time concentration of the monitored gas based on the first voltage and the second voltage.

[0071] In this embodiment of the application, the concentration standard curve of the dual-channel pyroelectric detector 13 can be obtained first, such as... Figure 3 As shown, the concentration standard curve is used to indicate the relationship between the ratio of the first voltage U1 = U(λ1, l) and the second voltage U2 = U(λ3, l) and the real-time concentration. Then, during the cleaning process, the first and second voltages are acquired at a preset frequency. Based on the real-time acquired first and second voltages, the concentration standard curve is consulted to determine the real-time concentration of the monitored gas, as shown. Figure 4 As shown, the concentration change curve of the monitored gas over time can be determined.

[0072] It should be noted that since dust and moisture are stored in the pipeline 11 in addition to the monitored gas, after the real-time concentration of the monitored gas is determined, the real-time concentration can be corrected according to a correction coefficient. Specifically, the SiF4 concentration wherein c is the SiF4 concentration, a (l1) is the molar extinction coefficient of SiF4, h (l1) is the photoelectric conversion coefficient of the double-channel pyroelectric detector 13 receiving the first-wavelength infrared light, h (l3) is the photoelectric conversion coefficient of the double-channel pyroelectric detector 13 receiving the second-wavelength infrared light, is the electro-optical conversion coefficient of the infrared light source emitter 12 emitting the first-wavelength infrared light, is the electro-optical conversion coefficient of the infrared light source emitter 12 emitting the second-wavelength infrared light, k (l1) is the correction coefficient of the Rayleigh scattering coefficient, the Mie scattering coefficient, and the moisture molecule absorption coefficient of the first wavelength, and k (l3) is the correction coefficient of the Rayleigh scattering coefficient, the Mie scattering coefficient, and the moisture molecule absorption coefficient of the second wavelength.

[0073] In the embodiment of the present application, the concentration-time curve of the monitored gas is obtained by the cleaning process monitoring device. Figure 4 As can be seen from the concentration-time curve of the monitored gas, after a certain cleaning time, the change amplitude of the real-time concentration of the monitored gas becomes smaller and smaller, and when the real-time concentration does not change, it can be determined that the deposition film in the reaction chamber is cleaned. In order to avoid over-cleaning and at the same time ensure that the reaction chamber will not have film peeling phenomenon, the controller 14 can generate a cleaning process stop instruction when the real-time concentration is less than a preset concentration. Exemplarily, the preset concentration can be 2-5 ppmv, such as 3 ppmv.

[0074] It can be understood that the cleaning process stop instruction can be used to instruct to stop generating the monitored gas. If the monitored gas is generated in a dry cleaning process, the cleaning process stop instruction can be used to instruct to stop dry cleaning.

[0075] In the embodiment of the present application, the cleaning process monitoring device can detect the real-time concentration of the monitored gas of 0-200 ppm. The lower limit of detection can be set to 1 ppmv, and the resolution is 8 ppm / s.

[0076] In the embodiment of the present application, the cleaning process monitoring device can also set the monitoring frequency to any time between 0.5 seconds and 5 seconds, such as 1 second, 3 seconds, 3.2 seconds, and the like.

[0077] The embodiment of the present application sends the gas generated in the dry cleaning process into the pipeline 11, and monitors the real-time concentration of the monitored gas in the pipeline 11 through the infrared light source emitter 12 and the dual-channel pyroelectric detector 13. The controller 14 is connected with the dual-channel pyroelectric detector, and the controller 14 acquires the real-time concentration monitored by the dual-channel pyroelectric detector. When the real-time concentration is less than the preset concentration, a cleaning process stopping instruction is generated. In this way, the dry cleaning effect is effectively monitored.

[0078] It should be noted that different embodiments can produce different beneficial effects, and in different embodiments, the beneficial effects that can be produced can be any one or a combination of the above, or any other beneficial effects that can be obtained.

[0079] In summary, after reading the content of the present application, those skilled in the art can understand that the foregoing application content can be presented only in an exemplary manner and can not be limiting. Although it is not explicitly stated here, those skilled in the art can understand that the present application is intended to encompass various reasonable changes, improvements and modifications to the embodiments. These changes, improvements and modifications are within the spirit and scope of the exemplary embodiments of the present application.

[0080] It should also be understood that although the terms first, second, third, etc. can be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Therefore, the first element in some embodiments can be referred to as the second element in other embodiments without departing from the teachings of the present application. The same reference numbers or the same reference signs represent the same elements throughout the specification.

Claims

1. A cleaning process monitoring device, characterized in that, include: Pipeline, the pipeline being used to supply the monitored gas; An infrared light source emitter is disposed at one end of the pipeline. The infrared light source emitter is used to emit infrared light, and the wavelength of the infrared light includes a first wavelength and a second wavelength. A dual-channel pyroelectric detector is disposed at the other end of the pipeline. The dual-channel pyroelectric detector is configured to generate a first voltage based on infrared light of a first wavelength passing through the pipeline; and to generate a second voltage based on infrared light of a second wavelength passing through the pipeline; and to determine the real-time concentration of the monitored gas based on the first voltage and the second voltage. A controller, electrically connected to the dual-channel pyroelectric detector, is configured to generate a cleaning process stop command when the real-time concentration is less than a preset concentration.

2. The cleaning process monitoring device as described in claim 1, characterized in that, The light emitting end of the infrared light source emitter is attached to one end of the pipeline; the light receiving end of the dual-channel pyroelectric detector is attached to the other end of the pipeline.

3. The cleaning process monitoring device as described in claim 2, characterized in that, Also includes: A first fixing component is disposed on the outside of the light emitting end of the infrared light source emitter and one end of the pipeline, and the first fixing component is used to fix the infrared light source emitter and the pipeline. The second fixing component is disposed on the outside of the light receiving end of the dual-channel pyroelectric detector and the other end of the conduit, and is used to fix the dual-channel pyroelectric detector and the conduit.

4. The cleaning process monitoring device as described in claim 1, characterized in that, The monitored gas is SiF4 gas.

5. The cleaning process monitoring device as described in claim 4, characterized in that, The wavelength range of the infrared light is 2.5μm-20μm.

6. The cleaning process monitoring device as described in claim 5, characterized in that, The first wavelength is 4.86 μm, and the second wavelength is 6.50 μm.

7. The cleaning process monitoring device as described in claim 1, characterized in that, The pipeline includes: Pipeline body; An air intake pipe, one end of which is connected to the first end of the main pipe body, and the other end of which is connected to the exhaust pipe of the reaction chamber; An exhaust pipe is provided, one end of which is connected to the second end of the main pipe body, and the other end of which is connected to a gas purification device.

8. The cleaning process monitoring device as described in claim 7, characterized in that, The cavity length of the main body of the pipeline is a first length, and the radius of the cross-section of the main body of the pipeline is a second length.

9. The cleaning process monitoring device as described in claim 7, characterized in that, The other end of the air intake pipe is connected to the exhaust pipe of the reaction chamber via a condenser.

10. The cleaning process monitoring device as described in claim 8, characterized in that, The first length matches the propagation period of the infrared light, and the second length matches the diameter of the exhaust pipe cross-section.

11. A deposition apparatus, characterized in that, Includes the cleaning process monitoring device as described in any one of claims 1-10.

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