Bearing ring of MOCVD epitaxial equipment, wafer bearing device and MOCVD epitaxial equipment

Abstract

The utility model discloses a kind of bearing ring of MOCVD epitaxial equipment, wafer bearing device and MOCVD epitaxial equipment, including week wall, shielding part, annular connecting part, week wall extends upwards along the radial outer side of connecting part, shielding part extends downwards along the radial inner side of connecting part, connecting part includes the upper support surface extending radially from the radial inner side boundary of week wall to the radial inner side edge of connecting part, and the lower support surface extending radially from the radial outer side boundary of shielding part to the radial outer side edge of connecting part, the radial outer side edge of upper support surface is closer to the radial outer side of connecting part than the radial inner side edge of lower support surface.The utility model improves the cooperation stability of bearing ring and base, reduces wafer pollution accumulation and improves rotation balance, with the advantages of reducing pollution, improving rotation stability and thin film deposition uniformity.

Description

Technical Field

[0001] This utility model relates to semiconductor thin film deposition technology, specifically to a carrier ring and wafer carrier device for an MOCVD epitaxy apparatus and an MOCVD epitaxy apparatus. Background Technology

[0002] MOCVD (Metal-Organic Chemical Vapor Deposition) is an epitaxial growth technique used to grow high-quality semiconductor thin films, widely applied in the manufacture of LEDs, lasers, power electronic devices, and optoelectronic devices (such as solar cells). Its core principle involves the decomposition of organometallic compounds and hydride gases in a high-temperature reaction chamber to deposit single-crystal or polycrystalline thin films on the substrate surface. The carrier ring is a crucial component in MOCVD equipment, supporting the wafer and suspending it during rotation. Existing carrier rings are prone to contamination during epitaxial processes, resulting in low yields. Furthermore, their thick, heavy structure hinders rotation, leading to uneven film deposition. In addition, existing carrier rings suffer from structural design flaws, with inadequate support surface design causing insufficient stability during rotation, further impacting the quality and uniformity of film deposition. Therefore, improvements to existing technologies are urgently needed to address these issues. Utility Model Content

[0003] The purpose of this invention is to provide a carrier ring and wafer carrier device for MOCVD epitaxy equipment, as well as MOCVD epitaxy equipment, which have the advantages of reducing contamination, improving rotational stability, and improving the uniformity of thin film deposition.

[0004] This utility model provides a support ring for an MOCVD epitaxial device, the technical solution of which is as follows:

[0005] A support ring for an MOCVD epitaxy apparatus includes a peripheral wall, a shielding portion, and an annular connecting portion. The peripheral wall extends upward along the radially outer side of the connecting portion, and the shielding portion extends downward along the radially inner side of the connecting portion. The connecting portion includes an upper support surface extending radially from the radially inner boundary of the peripheral wall to the radially inner edge of the connecting portion, and a lower support surface extending radially from the radially outer boundary of the shielding portion to the radially outer edge of the connecting portion. The radially outer edge of the upper support surface is closer to the radially outer side of the connecting portion than the radially inner edge of the lower support surface.

[0006] Furthermore, this utility model also proposes that the shielding part is a columnar annular body.

[0007] Furthermore, the peripheral wall includes an annular outer peripheral surface extending from the radially outer edge of the connection to the top of the peripheral wall.

[0008] Furthermore, the peripheral wall also includes an inner peripheral surface extending upward from the radially outer edge of the upper support surface.

[0009] Furthermore, the outer circumferential surface transitions to the inner circumferential surface with a rounded or sloping shape.

[0010] Furthermore, the outer circumferential surface is inclined, and the inner circumferential surface is vertical.

[0011] Furthermore, the radial distance between the outer radial edge of the upper support surface and the inner radial edge of the lower support surface is 2-10 mm.

[0012] Furthermore, the ratio of the radial width of the shielding part to the radial width of the lower support surface is 1:2 to 1:5.

[0013] A wafer carrier device for an MOCVD epitaxial device includes the aforementioned carrier ring and a carrier base disposed below the carrier ring. The carrier base is disc-shaped and includes a central boss and a support flange and a limiting groove disposed around the central boss. The limiting groove is formed by the top surface of the support flange near the central boss being recessed downwards. When the carrier ring is mounted on the carrier base, the top of the support flange abuts against the lower support surface, and the shielding portion extends into the limiting groove. The height of the support flange is less than the height of the central boss, the height difference between the central boss and the support flange is equal to the height difference between the upper support surface and the lower support surface, and the width of the support flange located outside the limiting groove is less than the width of the lower support surface.

[0014] An MOCVD epitaxy apparatus, comprising any of the aforementioned carrier rings.

[0015] As can be seen from the above, the MOCVD epitaxial equipment carrier ring and wafer carrier device and MOCVD epitaxial equipment provided by this utility model, through the misalignment and partial overlap design of the upper support surface and the lower support surface, make the peripheral wall and the shielding part sufficiently far apart on the connection part, and set the shielding part at the end of the connection part to improve the fit stability between the carrier ring and the base, reduce wafer contamination accumulation and improve rotational balance, and have the advantages of reducing contamination, improving rotational stability and thin film deposition uniformity. Attached Figure Description

[0016] Figure 1 An exploded view of a wafer carrier device provided in an embodiment of this utility model;

[0017] Figure 2 A cross-sectional view of a bearing ring provided for an embodiment of this utility model;

[0018] Figure 3 A top view of a bearing ring provided in an embodiment of this utility model;

[0019] Figure 4 A top view of a support base provided in an embodiment of this utility model;

[0020] Figure 5 This is a partial cross-sectional view of a wafer carrier device provided in an embodiment of the present utility model.

[0021] In the figure: 1. Bearing ring; 2. Connecting part; 3. Peripheral wall; 4. Shielding part; 5. Upper support surface; 6. Lower support surface; 7. Bottom surface of shielding part; 8. Bearing base; 9. Central boss; 10. Support flange; 11. Limiting groove; 12. Outer peripheral surface; 13. Inner peripheral surface; 14. Side wall; 15. Outer side wall; 16. Top surface; 17. Outer side surface; 18. Inner side surface. Detailed Implementation

[0022] The technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application. It should be noted that similar reference numerals and letters in the following drawings indicate similar items; therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. Furthermore, in the description of this application, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0023] In existing technologies, the design of the support ring in MOCVD epitaxy equipment has long faced the challenge of balancing contamination control and structural weight. Traditional support rings lack effective protective structures, allowing reactive gases to easily form deposits on the back side of the wafer, leading to wafer surface contamination. This necessitates additional processes to clean backside contaminants, significantly impacting production efficiency. Simultaneously, the relatively heavy structure increases the inertia of rotating components, affecting dynamic stability during high-speed rotation and restricting the uniformity of thin film deposition.

[0024] In some implementations, please refer to Figures 1-5The supporting ring 1 includes a peripheral wall 3, a shielding portion 4, and an annular connecting portion 2. The peripheral wall 3 extends upward radially outward along the connecting portion 2 to form an outer protective layer, while the shielding portion 4 extends downward radially inward to form a bottom isolation layer. The connecting portion 2 is provided with an upper support surface 5 and a lower support surface 6. The former extends from the radially inner boundary of the peripheral wall 3 to the inner edge of the connecting portion 2, while the latter extends from the radially outer boundary of the shielding portion 4 to the outer edge of the connecting portion 2. The radially outer edge of the upper support surface 5 is closer to the outer side in the radial direction than the radially inner edge of the lower support surface 6. By adding a vertically extending protective structure below the wafer support area and redesigning the spatial layout of the support surfaces, hydrodynamic simulations have shown that radially offsetting and partially overlapping the upper and lower support surfaces effectively isolates reaction byproducts, optimizes stress distribution, and reduces overall weight. Meanwhile, the shielding part 4 is located at the end of the connecting part 2 and extends directly downward from the end. This arrangement makes it easier to assemble as it can be directly inserted into the limiting groove 11 compared to the middle arrangement. On the other hand, it reduces some bends and turns, and the vertical surface is directly downward, which reduces the deposition of reactants in the shielding part 4.

[0025] The peripheral wall 3 refers to the vertical protective structure surrounding the wafer mounting area. It can be integrally formed from materials such as graphite or silicon carbide, and is used to block the wafer during rotation, preventing it from flying out under centrifugal force. The shielding part 4 refers to the protective extension located at the bottom of the support ring 1. It can be an inverted L-shaped structure integrally formed with the connecting part 2, used to isolate byproduct deposition within the reaction chamber. The connecting part 2 refers to the transition area connecting the peripheral wall 3 and the shielding part 4. It is specifically formed by machining into a composite structure with different support surfaces, achieving the dual functions of mechanical support and spatial separation. The upper support surface 5 refers to the contact plane supporting the wafer body, and the lower support surface 6 refers to the support plane abutting the support base 8. The upper support surface 5 is configured to support the wafer edge, and the lower support surface 6 is configured to contact the support flange 10 of the support base 8.

[0026] Specifically, in the assembled state, the upper support surface 5 of the support ring 1 forms a wafer positioning reference surface, and the bottom end of the shielding part 4 extends into the limiting groove 11 of the support base 8. When the reactive gas flows across the wafer surface, the downwardly extending shielding part 4 forms a physical barrier, preventing the deposition of gaseous byproducts on the back side of the wafer. The double-layer support surface design of the connecting part 2 makes the rotation axis and the wafer's center of mass tend to coincide, reducing eccentric vibration during high-speed rotation. The radially misaligned and partially overlapping layout of the upper support surface 5 and the lower support surface 6 optimizes the distribution of support torque, enabling the support ring 1 to achieve lightweight while maintaining structural strength.

[0027] Through the above technical solution, this invention effectively prevents the deposition of reaction byproducts on the wafer edge and back side. The optimized support surface layout reduces the mass of the support ring 1, improves rotational balance accuracy, and significantly improves film thickness uniformity. This structure also reduces the energy consumption of the rotation drive system, improving the equipment's energy efficiency ratio while ensuring process quality.

[0028] In some implementations, please refer to Figures 1-3 The shielding part 4 is a columnar annular body. The columnar annular body refers to an annular structure with cylindrical surface features, which can form a continuous vertical extension surface. The shielding part 4 is a component extending radially inward from the connecting part 2, specifically a columnar annular body or an annular body with chamfers, used to embed into the limiting groove 11 to form physical isolation when the supporting ring 1 mates with the base. Its function is to form at least two sealing surfaces of different heights (the bottom surface 7 of the shielding part and the top surface 16 of the supporting flange) to form a complete physical barrier surface to prevent gaseous byproducts in the reaction chamber from diffusing to the back of the wafer.

[0029] Specifically, the columnar annular body, through its continuous and vertically extending cylindrical surface, forms a closed barrier surrounding the edge of the wafer when the support ring 1 is installed. When the MOCVD equipment generates gaseous byproducts during operation, the axially extending cylindrical surface of the annular body can completely cover the gap between the edge of the support ring 1 and the support base 8, preventing the byproducts from entering the back surface area of ​​the wafer through the gap. Specifically, two horizontal sealing surfaces of different heights (bottom surface 7 of the shielding part and top surface 16 of the support flange) are formed, and the sealing effect is significantly improved by the setting of double sealing surfaces. The annular body is manufactured by integrally molding with the connecting part 2, which maintains structural continuity and avoids assembly gaps caused by splicing.

[0030] In some implementations, please refer to Figure 5 The peripheral wall 3 includes an annular outer peripheral surface 12 extending from the radially outer edge of the connecting portion 2 to the top of the peripheral wall 3. The peripheral wall 3 refers to the vertical enclosure structure formed around the connecting portion 2 in the main structure of the support ring 1, used to support the wafer and form a gas flow boundary during the deposition process. The radially outer edge of the connecting portion 2 refers to the annular boundary line at the connection between the connecting portion 2 and the peripheral wall 3. The annular outer peripheral surface 12 refers to a continuous surface distributed in a closed ring on the outer side of the peripheral wall 3, which can be implemented using a cylindrical surface or a sloped surface structure. The annular outer peripheral surface 12 strengthens the overall structure of the peripheral wall 3 of the support ring 1, effectively reducing the probability of structural deformation under high-temperature conditions. Simultaneously, the continuous boundary layer formed by the annular outer peripheral surface 12 optimizes the flow state of the reactive gas at the wafer edge, thereby suppressing abnormal edge growth during the thin film deposition process.

[0031] In some implementations, please refer to Figure 5The peripheral wall 3 also includes an inner peripheral surface 13 extending upward from the radially outer edge of the upper support surface 5. The upper support surface 5 refers to the annular planar region formed by the extension of the surface of the connecting portion 2 from the radially inner boundary of the peripheral wall 3 towards the center, used to support the wafer. The inner peripheral surface 13 refers to the annular wall surface formed by the vertical upward extension of the radially outer edge of the upper support surface 5.

[0032] In some implementations, please refer to Figure 5 The outer peripheral surface 12 transitions to the inner peripheral surface 13 with a rounded or beveled shape. The outer peripheral surface 12 refers to the annular outer surface extending upwards from the radially outer edge of the connecting portion 2. Specifically, it can be formed using machining or casting processes to create a wall surface with an inclined or curved profile. The rounded or beveled shape reduces stress concentration. The inner peripheral surface 13 is used to prevent the wafer from flying out during rotation and to maintain the wafer's rotational stability. The rounded or beveled transition refers to the continuous curved or inclined surface formed between the top of the outer peripheral surface 12 and the bottom of the inner peripheral surface 13. Specifically, the geometry of the transition area can be controlled during processing using the radius of the arc or the angle of inclination to avoid right-angle turns at the connection.

[0033] Specifically, in the peripheral wall 3 structure of the bearing ring 1, the top of the outer peripheral surface 12 is smoothly connected to the top of the inner peripheral surface 13 through a rounded or beveled surface. When the bearing ring 1 rotates with the bearing base 8, the transition area eliminates the stress concentration phenomenon at the traditional right-angle connection, making the overall stress distribution of the peripheral wall 3 more uniform. The rounded structure can be formed by CNC machine tool machining to create an arc transition, while the beveled transition can be achieved by setting a milling path with a specific angle. This design improves the rotational dynamic balance while ensuring the mechanical strength of the peripheral wall 3. The outer peripheral surface 12 and inner peripheral surface 13 of the traditional bearing ring 1 are connected at right angles, which easily generates stress cracks at the corners during high-speed rotation, and the airflow forming turbulence in the right-angle area affects the uniformity of deposition. This solution uses a rounded or beveled transition structure to make the airflow flow smoothly along the surface of the peripheral wall 3, while reducing the vibration amplitude during rotation.

[0034] Through the above technical solution, this utility model solves the problem of stress concentration at the connection of the peripheral wall 3 of the bearing ring 1, which leads to structural failure, and improves the dynamic stability of the bearing ring 1 when rotating at high speed, thereby improving the uniformity of thin film deposition and extending the service life of the component.

[0035] In some implementations, please refer to Figure 2 , Figure 5The outer peripheral surface 12 is inclined, and the inner peripheral surface 13 is vertical. The inclined outer peripheral surface 12 means that the annular surface between the radially outer edge of the connecting part 2 and the top of the peripheral wall 3 has an angle of inclination. This can be achieved by machining a continuous, smooth surface at an acute angle to the vertical direction, and the angle of inclination can be adjusted according to aerodynamic characteristics. The vertical inner peripheral surface 13 means that the annular surface between the radially inner edge of the connecting part 2 and the top of the peripheral wall 3 extends vertically.

[0036] Specifically, when the support ring 1 rotates with the support base 8, the inclined outer peripheral surface 12 guides the airflow in the reaction chamber to form a laminar flow state, reducing the interference of eddies on the wafer surface deposition process. Simultaneously, the vertical inner peripheral surface 13 enhances the structural rigidity of the peripheral wall 3 by maintaining radial constraint. When the shielding part 4 extends into the limiting groove 11, the combined structure of the inclined and vertical surfaces allows the peripheral wall 3 to absorb some stress through deformation when subjected to high-temperature thermal stress, while the vertical surface maintains the flatness of the support surface, thus preventing wafer displacement due to thermal expansion. This technical solution, through the asymmetrical design of the inclined and vertical surfaces, optimizes the airflow distribution while maintaining structural strength, improving the uniformity of film thickness between the wafer edge and center regions. At the same time, the inclined design also reduces the weight of the peripheral wall 3, which is more conducive to improving rotational accuracy.

[0037] In some implementations, please refer to Figure 5 The peripheral wall 3 also includes radial sidewalls 14, which are adjacent to the outer peripheral surface 12 above it. The mechanical strength at the edge of the bearing ring 1 can be improved by providing sidewalls 14.

[0038] In some embodiments, the radial distance between the outer radial edge of the upper support surface 5 and the inner radial edge of the lower support surface 6 is 2-10 mm. Here, the radial distance refers to the horizontal distance between the outer radial edge of the upper support surface 5 and the inner radial edge of the lower support surface 6. Specifically, this distance can be achieved by adjusting the radial spacing between the shielding part 4 and the peripheral wall 3. This distance range is set to 2-10 mm to balance the blocking effect of the shielding part 4 on the reacting gas and the structural strength of the connecting part 2. More importantly, the thickness of the shielding part 4 and the peripheral wall 3 can be made thinner, reducing the weight ratio of the shielding part 4 and the peripheral wall 3, thereby reducing the overall weight of the bearing ring 1.

[0039] Specifically, the outer radial edge of the upper support surface 5 is positioned closer to the outer radial edge than the inner radial edge of the lower support surface 6. The area covered by the upper support surface 5 is used for wafer positioning, while the area covered by the lower support surface 6 is used for contact with the support base 8. The radial distance of 2-10 mm is controlled to ensure that the shielding part 4 effectively blocks the airflow in the reaction chamber while avoiding a decrease in structural strength of the connecting part 2 due to excessive radial span. This solution, by limiting the range of radial distance, ensures the fitting accuracy between the shielding part 4 and the limiting groove 11, while avoiding the increase in weight caused by structural redundancy of the shielding part 4 and the peripheral wall 3. It effectively solves the problem of contaminant infiltration caused by improper sealing of the contact surface between the existing support ring 1 and the support base 8, and optimizes the structural layout of the connecting part 2, the shielding part 4, and the peripheral wall 3. By controlling the radial distance within a specific range, it maintains the blocking effect of the shielding part 4 on the reaction gas while avoiding a decrease in rotational stability caused by excessive thickness of the shielding part 4 and the peripheral wall 3, thereby improving the uniformity of thin film deposition on the wafer surface.

[0040] In some implementations, please refer to Figure 5 The ratio of the radial width of the shielding part 4 to the radial width of the lower support surface 6 is 1:2 to 1:5. The radial width ratio refers to the ratio of the lateral dimension of the shielding part 4 to the lateral extension of the lower support surface 6. This ratio can be achieved by adjusting the thickness of the shielding part 4 and the extension length of the connecting part 2. This ratio is optimized as a key parameter to balance structural strength and shielding coverage.

[0041] Specifically, the upper support surface 5 of the connecting part 2 extends from the inner edge of the peripheral wall 3 towards the center to form a wafer support platform, and the lower support surface 6 extends from the outer edge of the shielding part 4 outward to form the contact surface of the bearing base 8. When the width of the shielding part 4 is controlled to be one-fifth to one-half of the width of the support surface, it can ensure that the shielding part 4 effectively blocks the reactants inside the reaction chamber, and also avoid the overall weight of the connecting part 2 from increasing due to the excessive volume of the shielding part 4. Traditional bearing rings 1 do not limit the width ratio between the shielding part 4 and the support surface, which often leads to uneven weight distribution of the connecting part 2 due to the shielding part 4 being too wide, or contaminants penetrating due to the shielding part 4 being too narrow. This solution reduces the amount of material used while ensuring structural strength by constraining this ratio, and at the same time makes the shielding part 4 and the base limiting groove 11 form a precise fit, eliminating the installation gap caused by dimensional mismatch, reducing the overall mass of the bearing ring 1 while maintaining the shielding effect, reducing the inertial torque when the wafer rotates, and thus improving the uniformity of thin film deposition. The proportional design of the shielding part 4 and the lower support surface 6 avoids local stress concentration in the connection part 2 and extends the service life of the bearing ring 1 in high temperature and corrosive environment.

[0042] In some embodiments, the ratio of the radial width of the shielding portion 4 to the radial width of the peripheral wall 3 is 1:1 to 1:3, and may further be 1:2 or other ratios.

[0043] In some embodiments, the radial width of the shielding part 4 is 2mm-8mm. By setting the radial width within this range, it is possible to ensure that the shielding part 4 has sufficient supporting strength without being too thick and increasing the weight.

[0044] In some implementations, please refer to Figure 5 This invention further proposes a wafer carrier device for an MOCVD epitaxial device, including a carrier ring 1 and a carrier base 8 disposed below the carrier ring 1. The carrier base 8 is disc-shaped and includes a central boss 9 and a support flange 10 and a limiting groove 11 arranged around the central boss 9. The limiting groove 11 is formed by the downward recess of the top surface of the support flange 10 near the central boss 9. When the carrier ring 1 is installed on the carrier base 8, the top surface 16 of the support flange 10 abuts against the lower support surface 6, and the top surface 16 and the lower support surface 6 form a sealing surface. The shielding part 4 extends into the limiting groove 11, and the bottom surface 7 of the shielding part 4 is supported on the bottom of the limiting groove 11 and forms a sealing surface with the bottom of the groove. In this way, two sealing surfaces are formed, which can better limit the flow of reactants from the gap between the carrier ring 1 and the carrier base 8 into the back of the wafer and cause contamination. More importantly, the sealing surface not only serves a sealing function but also a supporting function. Existing designs use a single supporting surface, and in order to ensure sufficient support strength, the protrusion with the supporting surface is usually designed to be very thick. The solution is changed to support with two surfaces (bottom surface 7 of the shielding part and top surface 16 of the supporting flange), which makes the support more stable. In this way, the thickness of the shielding part 4 can be greatly reduced, thereby reducing the overall weight of the bearing ring 1.

[0045] In some embodiments, the height of the support flange 10 is less than the height of the central boss 9, and the height difference between the central boss 9 and the support flange 10 is equal to the height difference between the upper support surface 5 and the lower support surface 6. In this way, the wafer can be supported on both the central boss 9 and the upper support surface 5, ensuring good contact between the wafer and the support ring 1 and the support base 8, improving rotational coordination and rotational accuracy.

[0046] The bearing base 8 is a disc-shaped structure used to fix the bearing ring 1 and transmit rotational power, and can be made of high-temperature resistant materials such as graphite. The central boss 9 is a cylindrical protrusion in the central area of ​​the bearing base 8, used to maintain the radial positioning of the bearing ring 1 during rotation. The support flange 10 is an annular protrusion surrounding the central boss 9, whose top plane contacts the lower support surface 6 of the bearing ring 1 and transmits the supporting force. The limiting groove 11 is an annular groove structure on the top of the support flange 10, used to accommodate the shielding part 4 of the bearing ring 1 and limit its radial displacement.

[0047] Specifically, the carrier ring 1 achieves vertical positioning through the contact between the lower support surface 6 and the top of the support flange 10, while the shielding part 4 is embedded in the limiting groove 11 to limit horizontal displacement. The height difference between the central boss 9 and the support flange 10 is designed to be equal to the height difference between the upper support surface 5 and the lower support surface 6 of the carrier ring 1. This ensures that when the carrier ring 1 is installed in place, the upper support surface 5 and the top of the central boss 9 form a horizontal reference surface, ensuring that the wafer is placed stably.

[0048] In some specific embodiments, the height of the central boss 9 can be 5-15mm, for example, by adjusting the machining allowance to achieve adaptation to different specifications. The width of the supporting flange 10 can be 2-5mm, and its material can be silicon carbide, quartz, or graphite to enhance high-temperature resistance. The depth of the limiting groove 11 can be 1-5mm, specifically determined according to the length of the shielding part 4.

[0049] In some specific embodiments, the inner surface 18 of the shielding wall 4 is an inner cylindrical surface that mates with the outer surface of the central boss 9, resulting in a very small gap between the two. Similarly, the outer surface 17 of the shielding part 4 is an outer cylindrical surface that mates with the inner wall of the supporting flange 10, also resulting in a very small gap between the two, preventing reactants from entering the back side of the wafer from the gap between the support ring 1 and the support base 8.

[0050] Compared to existing technologies, the existing support ring 1 base lacks a limiting groove 11 structure, resulting in the shielding part 4 being unable to be effectively constrained and prone to displacement due to airflow impact. This solution, however, significantly improves the positioning accuracy of the support ring 1 through the cooperation of the limiting groove 11 and the shielding part 4. Furthermore, the existing base's support surface and the central boss 9 are not matched in height, resulting in a gap between the wafer and the support ring 1. This solution, through a height difference compensation design, allows the wafer to directly adhere to the surface of the central boss 9, preventing deposited material from seeping into the gap.

[0051] Through the above technical solutions, this utility model solves the contamination problem caused by the lack of a limiting structure in the support ring 1. Simultaneously, by matching the height difference and width constraints, it improves the stability of wafer rotation. The cooperation between the shielding part 4 and the limiting groove 11 effectively prevents the reactive gas from eroding the lower surface of the support ring 1, extending the component's service life. The optimized design of the contact area between the support flange 10 and the lower support surface 6 reduces deformation of the support ring 1 caused by uneven contact stress, thereby improving the uniformity of epitaxial film deposition.

[0052] In some embodiments, the width of the support flange 9 located outside the limiting groove 11 is smaller than the width of the lower support surface 6. Specifically, the lower support surface 6 extends outward from the outer wall 15 of the support flange 10 and extends to the outer edge of the peripheral wall 3, thus forming an annular space that allows a robotic arm to reach in and lift the bearing ring 1 from below to remove the bearing ring 1 from the bearing base 8.

[0053] In some embodiments, the present invention further proposes an MOCVD epitaxial device, including the carrier ring 1 of any of the above embodiments.

[0054] Specifically, the carrier ring 1 forms a double-layer protection through the combination of the peripheral wall 3 and the shielding part 4. The peripheral wall 3 extends upward to prevent the wafer from flying out, and the shielding part 4 extends downward to seal the gap below the wafer. The upper support surface 5 and the lower support surface 6 of the connecting part 2 are radially offset and partially overlapped, making the overall center of gravity of the carrier ring 1 closer to the outside, thereby reducing eccentric vibration during rotation. When the carrier ring 1 is installed in the MOCVD equipment, the shielding part 4 is embedded in the limiting groove 11 of the carrier base 8, forming a sealed space between the carrier ring 1 and the carrier base 8, further preventing contaminants from depositing on the back of the wafer.

[0055] Through the above technical solution, this utility model solves the problem of decreased yield caused by backside contamination of wafers, and optimizes the rotational stability of the support ring 1, thereby significantly improving the uniformity of thin film deposition. Furthermore, the cooperation between the shielding part 4 and the limiting groove 11 simplifies the installation and positioning process, avoiding stress concentration caused by assembly deviations.

[0056] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A susceptor ring for a MOCVD epitaxial apparatus, characterized by, The bearing ring includes a peripheral wall, a shielding portion, and an annular connecting portion. The peripheral wall extends upward along the radially outer side of the connecting portion, and the shielding portion extends downward along the radially inner side of the connecting portion. The connecting portion includes an upper support surface extending radially from the radially inner boundary of the peripheral wall to the radially inner edge of the connecting portion, and a lower support surface extending radially from the radially outer boundary of the shielding portion to the radially outer edge of the connecting portion. The radially outer edge of the upper support surface is closer to the radially outer side of the connecting portion than the radially inner edge of the lower support surface.

2. A susceptor ring for a MOCVD epitaxial apparatus as recited in claim 1, wherein, The shielding part is a columnar ring-shaped body.

3. The carrier ring of a MOCVD epitaxial equipment according to claim 1, wherein, The peripheral wall includes an annular outer peripheral surface extending from the radially outer edge of the connection to the top of the peripheral wall.

4. A susceptor ring for a MOCVD epitaxial apparatus as recited in claim 3, wherein, The peripheral wall also includes an inner peripheral surface extending upward from the radially outer edge of the upper support surface.

5. The support ring of an MOCVD epitaxial device as described in claim 4, characterized in that, The outer peripheral surface is rounded or sloped to transition to the inner peripheral surface.

6. The support ring of an MOCVD epitaxial device as described in claim 4, characterized in that, The outer peripheral surface is inclined, and the inner peripheral surface is vertical.

7. The support ring of an MOCVD epitaxial device as described in claim 1, characterized in that, The radial distance between the outer radial edge of the upper support surface and the inner radial edge of the lower support surface is 2-10 mm.

8. The support ring of an MOCVD epitaxial device as described in claim 1, characterized in that, The ratio of the radial width of the shielding part to the radial width of the lower support surface is 1:2 to 1:

5.

9. A wafer carrier device for an MOCVD epitaxy apparatus, characterized in that: The system includes the bearing ring as described in any one of claims 1-8 and a bearing base disposed below the bearing ring. The bearing base is disc-shaped and includes a central boss and a supporting flange and a limiting groove disposed around the central boss. The limiting groove is formed by the top surface of the supporting flange near the central boss being recessed downwards. When the bearing ring is installed on the bearing base, the top of the supporting flange abuts against the lower supporting surface, and the blocking portion extends into the limiting groove. The height of the supporting flange is less than the height of the central boss, the height difference between the central boss and the supporting flange is equal to the height difference between the upper supporting surface and the lower supporting surface, and the width of the supporting flange located outside the limiting groove is less than the width of the lower supporting surface.

10. An MOCVD epitaxial device, characterized in that, The bearing ring as described in any one of claims 1-8.

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