Semiconductor laser and laser light emitting device

Abstract

The application relates to a semiconductor laser and a laser light emitting device. The semiconductor laser comprises a device body and a lens, and the device body comprises a laser chip. The lens is an integrated structure, comprising a supporting part and an optical part, the supporting part is sleeved on the device body, one end of the supporting part is sealingly connected with the device body, the optical part is arranged at the other end of the supporting part and corresponds to the laser chip. The semiconductor laser replaces the copper cap and the split lens of the traditional semiconductor laser by arranging the integrated lens, and the split lens does not need to be fixed on the copper cap, thereby saving the process steps. During assembly, the integrated lens is aligned with the laser chip on the device body, and is press-bonded on the device body, so that the focusing of the optical part and the laser chip is completed, the position of the lens does not need to be adjusted for many times, and the assembly efficiency is significantly improved. The lens is made of non-metal material, the cost is low compared with the copper cap, and the cost of the semiconductor laser is reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor light-emitting technology, and in particular to a semiconductor laser and a laser light-emitting device. Background Technology

[0002] Semiconductor lasers are widely used in fields such as optical communication, optical storage, and laser display due to their simple manufacturing process, small size, light weight, long lifespan, and high efficiency.

[0003] Traditional semiconductor lasers typically use a TO (Transmitter Outline) package, which includes a device body, a copper cap, and a lens. The lens is mounted on one end of the copper cap, and the other end of the copper cap is fitted onto the device body and threadedly connected to it. During assembly, in order to focus the laser chip on the lens and device body, the copper cap needs to be rotated multiple times to adjust the lens position until it is moved to the correct position. However, this assembly method is inefficient and needs improvement. Summary of the Invention

[0004] Therefore, it is necessary to provide a semiconductor laser and laser emission device to address the problem of low assembly efficiency of the copper cap in traditional semiconductor lasers.

[0005] A semiconductor laser, comprising:

[0006] The device body includes a laser chip; and

[0007] The lens is an integral structure and includes a support part and an optical part. The support part is sleeved on the device body, and one end of the support part is sealed to the device body. The optical part is located at the other end of the support part and is supported by the support part, and is configured corresponding to the laser chip.

[0008] In one embodiment, the semiconductor laser further includes a sealant layer disposed between the inner side of the support and the device body.

[0009] In one embodiment, the lens is integrally injection molded.

[0010] In one embodiment, the optical unit has an incident surface and an exit surface, at least one of the incident surface and the exit surface being a convex curved surface.

[0011] In one embodiment, the centerline of the optical section is on the same straight line as the optical axis of the laser chip.

[0012] In one embodiment, the laser chip is a side-emitting laser chip.

[0013] In one embodiment, the lens is made of polycarbonate, polymethyl methacrylate, epoxy resin, or silicone.

[0014] In one embodiment, the device body further includes a base and a heat sink. The base has a protrusion on its surface, and the protrusion has a cross-section. The heat sink is disposed on the cross-section of the protrusion, and the laser chip is disposed on the heat sink. One end of the support is sealed and bonded to the surface of the base with adhesive, and covers the protrusion.

[0015] In one embodiment, the device body further includes a first pin and a second pin, the first pin being electrically connected to the heat sink and extending through the base, and the second pin being electrically connected to the laser chip via a wire and extending through the base.

[0016] A laser emitting device, comprising:

[0017] substrate; and

[0018] A semiconductor laser, which is inserted into the substrate, wherein the semiconductor laser is the semiconductor laser described in any of the above embodiments.

[0019] The aforementioned semiconductor laser and laser emission device replace the copper cap and separate lenses of traditional semiconductor lasers with an integrated lens structure. This eliminates the need to fix the separate lenses to the copper cap, saving process steps. During assembly, the integrated lens is aligned with the laser chip on the device body and pressed onto the device body, thus achieving focusing between its optical components and the laser chip. This eliminates the need for repeated lens position adjustments, significantly improving assembly efficiency. Furthermore, the lens is made of a non-metallic material, which is cheaper than a copper cap, thereby reducing the cost of the semiconductor laser. Attached Figure Description

[0020] Figure 1 This is a cross-sectional view of a semiconductor laser in one embodiment of this application.

[0021] Figure 2 This is a cross-sectional view of a laser light-emitting device in one embodiment of this application.

[0022] Explanation of reference numerals in the attached figures:

[0023] 100-Semiconductor laser; 110-Device body; 111-Laser chip; 112-Base; 113-Heat sink; 114-Protrusion; 115-Cut surface; 116-First pin; 117-Second pin; 120-Lens; 122-Support; 124-Optical part; 130-Sealing adhesive layer; 200-Laser light-emitting device; 210-Substrate. Detailed Implementation

[0024] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0025] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0026] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0027] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0028] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0029] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0030] Please see Figure 1 , Figure 1 A cross-sectional view of a semiconductor laser according to an embodiment of this application is shown. The semiconductor laser 100 provided in this embodiment includes a device body 110 and a lens 120. The device body 110 includes a laser chip 111. The lens 120 is an integral structure and includes a support portion 122 and an optical portion 124. The support portion 122 is sleeved on the device body 110, and one end of the support portion 122 is sealed to the device body 110. The optical portion 124 is disposed at the other end of the support portion 122 and supported by the support portion 122, and is disposed corresponding to the laser chip 111.

[0031] By replacing the copper cap and separate lenses of a traditional semiconductor laser with an integrated lens 120, and eliminating the need to fix the separate lenses to the copper cap, process steps are saved. During assembly, the integrated lens 120 is aligned with the laser chip 111 on the device body 110 and pressed onto the device body 110, thus completing the focusing of its optical section 124 with the laser chip 111. This eliminates the need for repeated adjustments to the position of the lens 120, significantly improving assembly efficiency. Moreover, the lens 120 is made of a non-metallic material, which is cheaper than a copper cap, thereby reducing the cost of the semiconductor laser 100.

[0032] To achieve good airtightness of the device, the semiconductor laser 100 also includes a sealant layer 130. The sealant layer 130 is disposed between the inner side of the support portion 122 and the device body 110, which improves the fitting seal and connection stability of the support portion 122, better protects the internal laser chip 111, and helps to extend the service life of the device.

[0033] The laser chip 111 of the device body 110 can be an edge-emitting laser (EEL) chip. Edge-emitting laser chips have advantages such as a wide wavelength range, high electro-optical conversion efficiency, and high power, and are suitable for laser processing, optical communication and other fields. In other embodiments, the laser chip 111 can be a VCSEL chip (vertical cavity surface-emitting laser chip).

[0034] The device body 110 also includes a base 112 and a heat sink 113. The base 112 has a protrusion 114 on its surface, and the protrusion 114 has a cross-section 115. The heat sink 113 is disposed on the cross-section 115 of the protrusion 114. The laser chip 111 is disposed on the heat sink 113. When the laser chip 111 is working, its heat is conducted through the heat sink 113 to the protrusion 114, and then conducted through the base 112 to the outside of the lens 120, thus achieving efficient heat dissipation. Moreover, one end of the support 122 is sealed and bonded to the surface of the base 112 with adhesive (not shown), and covers the protrusion 114, thereby improving the sealing and stability of the connection between the end face of the support 122 and the surface of the base 112, preventing external moisture from entering the interior of the lens 120 from the connection point, and thus playing a role in isolating the external environment.

[0035] It should be noted that the adhesive used between the end face of the sealing layer 130 and the support portion 122 and the surface of the base 112 can be the same adhesive. When setting the sealing layer 130, adhesive is placed on the surface of the base 112, surrounding the protrusion 114. Then, the support portion 122 of the lens 120 is fitted around the protrusion 114, and the end face of the support portion 122 is pressed against the adhesive until it contacts the surface of the base 112. Due to the pressure, the adhesive is squeezed between the inner surface of the support portion 122 and the outer surface of the protrusion 114, forming the sealing layer 130. Alternatively, the sealing layer 130 can be a sealing ring, which is pre-fitted onto the protrusion 114. When the end face of the support portion 122 is bonded to the surface of the base 112, the adhesive simultaneously bonds the sealing ring, and the sealing ring is squeezed between the inner surface of the support portion 122 and the outer surface of the protrusion 114, thus forming a multi-layered sealing structure and further improving the airtightness.

[0036] The base 112 is a metal base with good thermal conductivity; its material can be, but is not limited to, copper. The heat sink 113 is also made of metal and can be bonded to the cut surface 115 of the protrusion 114 using thermally conductive silicone; its material can be, but is not limited to, copper. The laser chip 111 is die-bonded to the side of the heat sink 113 and is electrically connected to the heat sink 113.

[0037] The device body 110 also includes a first pin 116 and a second pin 117. The first pin 116 is electrically connected to the heat sink 113 and extends through the base 112. The second pin 117 is electrically connected to the laser chip 111 via a wire (unlabeled) and extends through the base 112. The first pin 116 and the second pin 117 are connected to external circuitry to provide operating current to the laser chip 111. The portions of the first pin 116 and the second pin 117 that extend through the base 112 are isolated from the base 112 by an insulating sleeve.

[0038] The device body 110 also includes a photodiode (not shown), a third pin (not shown), and a fourth pin (not shown). The photodiode is mounted on the base 112. The third pin can be electrically connected to the positive terminal of the photodiode via a bonding wire and is led out through the base 112. The fourth pin can also be electrically connected to the negative terminal of the photodiode via a bonding wire and is led out through the base 112. The photodiode is a photosensitive sensor used to sense the emission of the laser chip 111. When the laser chip 111 malfunctions, the photodiode outputs a corresponding signal to an external circuit through the third and fourth pins. The external circuit can monitor the operating status of the device based on this signal.

[0039] The center line of the optical section 124 of the lens 120 is on the same straight line as the optical axis of the laser chip 111. When the focus shifts, the focal point of the optical section 124 is still on the optical axis of the laser chip 111.

[0040] The base 112 and lens 120 are both cylindrical, and are coaxially arranged. The diameter of the base 112 is larger than that of the lens 120. Using a larger base 112 increases the heat dissipation area, thereby improving heat dissipation. It is understood that the shapes of the base 112 and lens 120 are not limited to cylindrical; other suitable shapes, such as square, can be used.

[0041] The optical section 124 has an incident light surface and an exit light surface, at least one of which is a convex curved surface. The convex curved surface of the optical section 124 can collimate the light emitted by the laser chip 111 and output a collimated laser beam.

[0042] Furthermore, the light-incident surface of the optical unit 124 is planar, and its light-exiting surface is convex curved, that is, the optical unit 124 is a single convex lens. In other embodiments, the light-incident surface and the light-exiting surface of the optical unit 124 may be arranged in opposite directions, or the optical unit 124 may be a double convex lens.

[0043] Lens 120 is formed by one-piece injection molding, that is, by injection molding through a mold, which facilitates processing and has high production efficiency.

[0044] The lens 120 can be made of materials that are not limited to polycarbonate, polymethyl methacrylate, epoxy resin, or silicone. In this embodiment, the lens 120 is made of polycarbonate (PC) or polymethyl methacrylate (PMMA), which combines good light transmittance, structural strength, and service life.

[0045] It should be noted that the semiconductor laser 100 in this application can be applied to various scenarios, including but not limited to laser lighting, laser display, laser projection, and laser testing, etc.

[0046] Please see Figure 2 , Figure 2 A cross-sectional view of a laser light-emitting device according to an embodiment of this application is shown. The laser light-emitting device 200 provided in this embodiment includes a substrate 210 and a semiconductor laser 100, which is inserted into the substrate 210. The specific structure of the semiconductor laser 100 is the same as described in the above embodiments. Since the laser light-emitting device 200 in this embodiment adopts all the technical solutions of all the above embodiments, it also has all the beneficial effects brought about by the technical solutions of the above embodiments, and will not be described in detail here. The substrate 210 may be, but is not limited to, a circuit board.

[0047] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0048] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A semiconductor laser, characterized in that, include: Device body (110), the device body (110) includes laser chip (111); and The lens (120) is an integral structure and includes a support part (122) and an optical part (124). The support part (122) is sleeved on the device body (110). One end of the support part (122) is sealed to the device body (110). The optical part (124) is located at the other end of the support part (122) and is supported by the support part (122), and is set corresponding to the laser chip (111).

2. The semiconductor laser according to claim 1, characterized in that, Also includes: A sealant layer (130) is disposed between the inner side of the support portion (122) and the device body (110).

3. The semiconductor laser according to claim 1 or 2, characterized in that, The lens (120) is integrally injection molded.

4. The semiconductor laser according to claim 1 or 2, characterized in that, The optical part (124) has an incident light surface and an exit light surface, at least one of the incident light surface and the exit light surface being a convex curved surface.

5. The semiconductor laser according to claim 1 or 2, characterized in that, The center line of the optical section (124) is on the same straight line as the optical axis of the laser chip (111).

6. The semiconductor laser according to claim 1 or 2, characterized in that, The laser chip (111) is a side-emitting laser chip (111).

7. The semiconductor laser according to claim 1 or 2, characterized in that, The lens (120) is made of polycarbonate, polymethyl methacrylate, epoxy resin or silicone.

8. The semiconductor laser according to claim 1 or 2, characterized in that, The device body (110) also includes a base (112) and a heat sink (113). The base (112) has a protrusion (114) on its surface. The protrusion (114) has a cross-section (115). The heat sink (113) is disposed on the cross-section (115) of the protrusion (114). The laser chip (111) is disposed on the heat sink (113). One end of the support (122) is sealed and bonded to the platform of the base (112) with glue, and covers the protrusion (114).

9. The semiconductor laser according to claim 8, characterized in that, The device body (110) also includes a first pin (116) and a second pin (117). The first pin (116) is electrically connected to the heat sink (113) and extends through the base (112). The second pin (117) is electrically connected to the laser chip (111) through a wire and extends through the base (112).

10. A laser emitting device, characterized in that, include: substrate(210); and A semiconductor laser (100) is inserted into the substrate (210), and the semiconductor laser (100) is the semiconductor laser (100) according to any one of claims 1 to 9.

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