Device for detecting phosphine in hydrogen for polysilicon production
By using a two-stage concentration unit to adsorb and remove chlorosilanes and hydrogen chloride, the problem of inaccurate phosphine detection in polysilicon production has been solved, achieving efficient and accurate phosphine detection.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- XINJIANG XINTE XINNENG MATERIAL TESTING CENT CO LTD
- Filing Date
- 2025-07-30
- Publication Date
- 2026-07-14
AI Technical Summary
In the prior art, the detection results of phosphine in hydrogen gas used in polysilicon production are affected by impurities such as chlorosilanes and hydrogen chloride, resulting in inaccurate detection.
A two-stage concentration unit is used, including a first concentrated hydrazine and a second concentrated hydrazine, which are used to adsorb and remove chlorosilane, phosphine, and hydrogen chloride, respectively. The phosphine content is accurately detected by a detection instrument.
It improves the accuracy of phosphine detection, eliminates interference from chlorosilanes and hydrogen chloride, simplifies operation, increases detection efficiency, and enables fully automated online operation.
Smart Images

Figure CN224500575U_ABST