Silicon rod growth system

Abstract

This application provides a silicon rod growth system, comprising: a growth furnace; a cooling element disposed within the growth furnace, the cooling element having a first channel; and a heat insulation sleeve at least partially disposed within the first channel, the heat insulation sleeve having a second channel, the second channel and the first channel at least partially overlapping. In this application, since at least a portion of the heat insulation sleeve is disposed within the first channel of the cooling element, and the heat insulation sleeve has a second channel, during the feeding stage, material can be fed into the growth furnace using the second channel of the heat insulation sleeve. During the melting stage, when the heat flow generated by the molten material in the growth furnace flows vertically, and the heat flow flows into the second channel of the heat insulation sleeve and conducts heat to the heat insulation sleeve, the heat insulation sleeve itself can prevent the heat from being conducted from the second channel to the cooling element, thereby reducing the amount of heat conducted from the growth furnace to the cooling element and reducing heat waste. This significantly improves the melting efficiency during the melting stage.

Description

Technical Field

[0001] This application belongs to the field of monocrystalline silicon production and manufacturing technology, and in particular relates to a silicon rod growth system. Background Technology

[0002] The solar photovoltaic industry typically uses the RCZ method to pull monocrystalline silicon rods. The RCZ method is characterized by the following: after pulling one silicon rod or when it is necessary to add silicon material to the crucible, silicon material is continuously added to the crucible through a feeder. During or after the silicon material is added, the heater in the single crystal furnace heats the silicon material to melt it into a liquid state. Seed crystals are then used to guide the crystal growth, and the rod is slowly pulled upwards and crystallized to grow the next monocrystalline silicon rod.

[0003] In the existing technology, since the upper and lower openings of the cooling components in the single crystal growth furnace are open structures, the cooling components and furnace cover carry away more than 60% of the heat during the feeding process and the melting stage, resulting in a large amount of heat waste and thus affecting the melting efficiency. Utility Model Content

[0004] This application provides a silicon rod growth system to solve the technical problem of low melting efficiency in existing single crystal growth furnaces.

[0005] This application provides a silicon rod growth system, comprising: a growth furnace; a cooling element disposed within the growth furnace, the cooling element having a first channel; and a heat insulation sleeve disposed at least partially within the first channel of the cooling element, the heat insulation sleeve having a second channel, the second channel and the first channel at least partially overlapping.

[0006] In summary, the silicon rod growth system provided in this application has at least the following beneficial effects: In the silicon rod growth system of this application, since at least a portion of the heat insulation sleeve is disposed within the first channel of the cooling element, and the heat insulation sleeve has a second channel, during the feeding stage (including initial feeding before growth or intermediate feeding during growth), the second channel of the heat insulation sleeve can be used to feed material into the growth furnace; that is, the presence of the heat insulation sleeve does not affect the feeding process. During the melting stage, since the heat insulation sleeve is disposed within the first channel of the cooling element, when the heat flow generated by the molten material in the growth furnace flows vertically, as the heat flow flows into the second channel of the heat insulation sleeve and conducts heat to the heat insulation sleeve, the heat insulation sleeve itself can prevent the heat from being conducted from the second channel to the cooling element. This reduces the amount of heat conducted from the growth furnace to the cooling element, thereby reducing heat waste and significantly improving the melting efficiency during the melting stage. Attached Figure Description

[0007] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the accompanying drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application; those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0008] Figure 1 This is a schematic diagram of the internal structure of the silicon rod growth system provided in the embodiments of this application; Figure 2 This is a schematic diagram of the feeding of the silicon rod growth system by the feeding cylinder provided in the embodiments of this application; Figure 3 This is a schematic diagram showing the connection relationship between the heat insulation sleeve, the drive mechanism, and the connecting components of the silicon rod growth system provided in this application embodiment.

[0009] The reference numerals in the attached figures are as follows: 10. Growth furnace; 11. Furnace body; 12. Furnace cover; T. Mounting hole; 20. Cooling component; 21. First heat exchanger; 22. Second heat exchanger; 210. First straight wall portion; A. First channel; 30. Insulation sleeve; 31. First straight section; 32. Cylinder connection section; 33. Second straight section; B. Second channel; 40. Connecting component; 41. First connector; 411. Connecting part; 412. Hanging part; 42. Second connector; 421. Main body; 4211. Connecting rod; 4212. Connecting block; 422. Hook; C. Hanging groove; 50. Drive mechanism; 51. Counterweight; 52. Lifting drive assembly; 53. Rotation drive assembly; 60. Insulation plate; 70. Adjustment assembly; 71. Rotating shaft; 72. Rotating mechanism; 80. Heat shield; 90. Crucible; 100. Heater; 200. Feeding cylinder; S represents the up and down direction. Detailed Implementation

[0010] To make the above and other features and advantages of this application clearer, the present invention will be further described below with reference to the accompanying drawings. It should be understood that the specific embodiments given herein are for the purpose of explanation to those skilled in the art and are exemplary only, not restrictive.

[0011] In the description of this application, features specified with "first" or "second" are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Features specified with "first" or "second" may explicitly or implicitly include at least one of the specified features. The use of the term "multiple" generally means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0012] In this application, unless otherwise explicitly specified and limited, terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can be a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0013] In the description of this application, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that the specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Furthermore, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0014] Please see Figures 1 to 3 The silicon rod growth system provided in this application includes a growth furnace 10, a cooling element 20, and a heat insulation sleeve 30.

[0015] The growth furnace 10 has a growth cavity for growing single-crystal silicon rods. A cooling element 20 is disposed within the growth cavity of the growth furnace 10. The cooling element 20 has a first channel A extending along the vertical direction S. The vertical direction S refers to the height direction of the growth furnace 10 and the growth direction of the single-crystal silicon rod. The cooling element 20 can be a cooling component for cooling the silicon rod during growth, such as a cooling component that introduces a coolant, or a heat insulation component, such as a graphite component or a composite material component for heat insulation, or a combination of a cooling component and a graphite or composite material component. This application does not make specific limitations.

[0016] At least a portion of the heat insulation sleeve 30 is disposed within the first channel A of the cooling element 20, and the heat insulation sleeve 30 has a second channel B, which at least partially overlaps with the first channel A. The heat insulation sleeve 30 may be made of high-temperature resistant materials such as graphite or carbon-carbon composite.

[0017] Understandably, the heat insulation sleeve 30 has a cylindrical structure. The heat insulation sleeve 30 can be partially or completely disposed within the first channel A of the cooling component 20. When part of the heat insulation sleeve 30 is disposed within the first channel A of the cooling component 20, the portion of the second channel B located within the first channel A coincides with the first channel A; when the entire heat insulation sleeve 30 is disposed within the first channel A of the cooling component 20, the entire portion of the second channel B coincides with the first channel A.

[0018] In the silicon rod growth system of this application, since at least a portion of the heat insulation sleeve 30 is disposed within the first channel A of the cooling element 20, and the heat insulation sleeve 30 has a second channel B, during the feeding stage (including the initial feeding before growth and the intermediate feeding during the growth process), the second channel B of the heat insulation sleeve 30 can be used to feed the growth furnace 10, that is, the presence of the heat insulation sleeve 30 will not affect the feeding process; while in the melting stage, since the heat insulation sleeve 30 is disposed within the first channel A of the cooling element 20, when the heat flow generated by the molten material in the growth furnace 10 flows in the vertical direction S, when the heat flow flows into the second channel B of the heat insulation sleeve 30 and conducts heat to the heat insulation sleeve 30, the heat in the second channel B can be blocked from being conducted to the cooling element 20 based on the heat insulation effect of the heat insulation sleeve 30 itself, thereby reducing the heat conduction from the growth furnace 10 to the cooling element 20, thereby reducing heat waste, and thus significantly improving the melting efficiency in the melting stage.

[0019] In other words, the heat insulation sleeve 30 in this application effectively prevents the cooling element 20 from absorbing heat from the growth furnace 10, thereby significantly improving the melting efficiency during the melting stage without affecting the feeding stage. Furthermore, for convenient and rapid feeding, the feeding cylinder 200 can be inserted into the second channel B of the heat insulation sleeve 30 for feeding through the feeding cylinder 200. Figure 2 As shown.

[0020] In some embodiments, please refer to Figure 1 and Figure 2 At least a portion of the heat insulation sleeve 30 covers the inner wall surface of the first channel A. That is, a portion of the heat insulation sleeve 30 may cover the inner wall surface of the first channel A, or the entire heat insulation sleeve 30 may cover the inner wall surface of the first channel A. Furthermore, the structure of the heat insulation sleeve 30 is adapted to the cooling element 20, and after the heat insulation sleeve 30 is placed in the first channel A of the cooling element 20, the heat insulation sleeve 30 can be supported on the inner wall of the first channel A.

[0021] The term "covering" here can be understood as shielding, fitting, or contacting. By covering at least a portion of the heat insulation sleeve 30 with the inner wall surface of the first channel A, it can be ensured that no gap is formed between the heat insulation sleeve 30 and the inner wall portion of the first channel A of the cooling element 20 it covers. This prevents the heat flow in the growth furnace 10 from entering through the gap between the two and transferring the heat to the cooling element 20.

[0022] Preferably, along the vertical direction S, at least the bottom portion of the inner wall of the first channel A of the cooling element 20 is covered by a heat insulation sleeve 30. This ensures that there is no heat flow between the entire cooling element 20 and the heat insulation sleeve 30, thereby preventing heat flow in the growth furnace 10 from entering through the gap between them and conducting heat to the cooling element 20, thus reducing heat waste and significantly improving the melting efficiency of the melting stage.

[0023] In some embodiments, the heat insulation sleeve 30 covers the entire inner wall surface of the first channel A of the cooling member 20, that is, any area of ​​the inner wall surface of the first channel A of the cooling member 20 is blocked by the heat insulation sleeve 30. At this time, the two ends of the heat insulation sleeve 30 in the vertical direction S can be flush with the two ends of the cooling member 20, and at least one end can also extend beyond the cooling member 20. This application does not make specific limitations.

[0024] By covering the entire inner wall surface of the first channel A of the cooling element 20 with the heat insulation sleeve 30, it can be ensured that no heat flow will flow between the cooling element 20 and the heat insulation sleeve 30, and the heat flow flowing into the second channel B of the heat insulation sleeve 30 will also be blocked by the inner wall of the second channel B. This can greatly block the heat radiation from the growth furnace 10 to the cooling element 20, thereby reducing heat waste and significantly improving the melting efficiency in the melting stage.

[0025] In some embodiments, please refer to Figure 2 and Figure 3 The heat insulation sleeve 30 includes a first cylindrical portion 31, and the cooling element 20 includes a first straight wall portion 210. The inner wall of the first cylindrical portion 31 is fitted to the inner wall of the first straight wall portion 210. In this embodiment, the first straight wall portion 210 of the cooling element 20 is close to the melt during crystal growth and is relatively close to the crystal surface, which allows for rapid cooling of the crystal during crystal growth, thereby increasing the pulling speed. By adapting the first cylindrical portion 31 to the first straight wall portion 210, the two can fit better, so that no gap is formed between the fitted portion of the heat insulation sleeve 30 and the cooling element 20, preventing heat flow in the growth furnace 10 from entering through the gap between them and conducting heat to the cooling element 20.

[0026] In some embodiments, please refer to Figure 2 and Figure 3The heat insulation sleeve 30 also includes a first straight cylindrical portion 31, a cylindrical connecting portion 32, and a second straight cylindrical portion 33. The inner diameter of the second straight cylindrical portion 33 is larger than the inner diameter of the first straight cylindrical portion 31, and the two ends of the cylindrical connecting portion 32 are connected to the first straight cylindrical portion 31 and the second straight cylindrical portion 33, respectively. In this embodiment, the inner diameter of the cooling element 20 portion corresponding to the second straight cylindrical portion 33 is larger than the inner diameter of the cooling element 20 portion corresponding to the first straight cylindrical portion 31. This is because, during the crystallization process, it is necessary to acquire images of the melt surface using a detection sensor; therefore, a portion of the cooling element has a larger inner diameter to serve as a clearance channel. Setting the heat insulation sleeve 30 such that the inner diameter of the second straight cylindrical portion 33 is larger than the inner diameter of the first straight cylindrical portion 33 better prevents heat from entering the cooling element 20. In this embodiment, the cylindrical connecting portion of the heat insulation sleeve 30 can be a conical structure.

[0027] In some embodiments, please refer to Figure 2 and Figure 3 The cooling component 20 includes a detachably connected first heat exchanger 21 and a second heat exchanger 22. The first heat exchanger 21 includes a first straight wall portion 210. At the connection between the first heat exchanger 21 and the second heat exchanger 22, the cylinder connection portion 32 has a clearance space on the side near the cooling component 20. During crystal growth, the inner diameter of the first straight wall portion 210 of the cooling component 20 is related to the crystal growth rate and the crystal diameter, directly affecting the crystal growth rate. In the prior art, when updating product size, the entire cooling component 20 is usually replaced, resulting in high replacement costs. However, in this embodiment, the cooling component 20 includes a detachably connected first heat exchanger 21 and a second heat exchanger 22. The first heat exchanger 21 includes a first straight wall portion 210. Therefore, when changing product size, only the first heat exchanger 21 needs to be replaced, thereby reducing the replacement cost of the cooling component.

[0028] Specifically, the first heat exchanger 21 and the second heat exchanger 22 can be detachably connected via flanges. Since the connecting parts occupy part of the inner space of the cooling element 20, in this embodiment, the cylinder connection portion 32 has a clearance space on the side near the cooling element 20, corresponding to the connection point of the cooling element. See also... Figure 3 The cylindrical connecting portion 32 of the heat insulation jacket is provided with a variable diameter structure, such as a spindle-shaped structure. The outer diameter of the outer wall surface of this structure is larger than the outer diameter of the adjacent area, thereby forming a clearance space. This clearance space is used to accommodate the connecting piece at the connection between the first heat exchanger 21 and the second heat exchanger 22. In some embodiments, please refer to Figure 3 The silicon rod growth system also includes a connecting component 40 and a driving mechanism 50. The connecting component 40 is connected to the heat insulation sleeve 30 by means of snap-fit ​​or bolt connection, and the driving mechanism 50 is connected to the connecting component 40 by means of snap-fit ​​or bolt connection. The driving mechanism 50 is used to drive the connecting component 40 to move so that the heat insulation sleeve 30 can enter and exit the first channel A of the cooling component 20.

[0029] In this embodiment, based on the configuration of the connecting component 40 and the driving mechanism 50, the heat insulation sleeve 30 can be placed in the first channel A of the cooling component 20 before the feeding stage, so that the heat insulation sleeve 30 can guide the feeding during the feeding stage and insulate the cooling component 20 during the melting stage; and after the melting stage, the heat insulation sleeve 30 can be removed from the first channel A of the cooling component 20. In this way, during the growth of the single crystal silicon rod, the single crystal silicon rod can grow in the first channel A of the cooling component 20 along the vertical direction S, thereby making full use of the cooling effect of the cooling component 20. On the one hand, it can ensure the growth quality of the silicon rod, and on the other hand, removing the heat insulation sleeve 30 can help improve the service life of the heat insulation sleeve 30.

[0030] In some embodiments, please refer to Figure 3 The connecting component 40 includes at least one first connector 41 and at least one second connector 42.

[0031] There may be one or more first connectors 41, each of which is connected to the heat insulation sleeve 30. When there are multiple first connectors 41, they can be spaced apart circumferentially along the heat insulation sleeve 30. The second connector 42 is connected to the drive mechanism 50, and the second connector 42 can change position relative to the first connector 41 under the action of the drive mechanism 50, so as to connect or disconnect from the first connector 41.

[0032] Understandably, the first connector 41 in the connecting assembly 40 is disposed on the heat insulation sleeve 30, and the second connector 42 is disposed on the driving mechanism 50. The first connector 41 and the second connector 42 are detachably connected. By driving the second connector 42 to move through the driving mechanism 50, the relative positional relationship between the second connector 42 and the first connector 41 can change, thereby enabling the second connector 42 to connect to the first connector 41 or the second connector 42 to detach from the first connector 41.

[0033] Specifically, before the feeding stage, the second connector 42 can be moved by the drive mechanism 50 to connect the second connector 42 to the first connector 41, or the first connector 41 can be manually connected to the second connector 42. Then, the heat insulation sleeve 30 is placed in the first channel A of the cooling element 20 by the drive mechanism 50 along the vertical direction S. After the heat insulation sleeve 30 is placed in the first channel A of the cooling element 20, the second connector 42 is moved relative to the first connector 41 by the drive mechanism 50 again to disengage the second connector 42 from the first connector 41, thus allowing subsequent feeding and melting. After the melting stage, the second connector 42 is moved by the drive mechanism 50 to connect the second connector 42 to the first connector 41, and then the heat insulation sleeve 30 is removed from the first channel A of the cooling element 20 by the drive mechanism 50 along the vertical direction S, thus allowing subsequent growth of the single crystal silicon rod.

[0034] Therefore, in this embodiment, based on the first connector 41 disposed on the heat insulation sleeve 30 and the second connector 42 disposed on the drive mechanism 50, as well as the detachable connection between the first connector 41 and the second connector 42, the connection or disconnection between the second connector 42 and the first connector 41 can be realized by adjusting the positional relationship between the second connector 42 and the first connector 41. This allows the heat insulation sleeve 30 to adapt to the needs of different stages in the preparation process of single crystal silicon rods, ensuring the flexibility of the use of the heat insulation sleeve 30 and helping to improve the service life of the heat insulation sleeve 30.

[0035] In some embodiments, please refer to Figure 3 There are multiple first connectors 41, each including a connecting portion 411 and a hooking portion 412. The connecting portion 411 is connected to the heat insulation sleeve 30, such as being fitted to the inner wall of the second channel B of the heat insulation sleeve 30 and bolted to the heat insulation sleeve 30. Along the vertical direction S, the hooking portion 412 is disposed on the top of the connecting portion 411, such as being integrally formed with the connecting portion 411 and located on the top of the connecting portion 411, and the hooking portion 412 is provided with a hooking groove C. The driving mechanism 50 can drive the second connector 42 to rotate, so that the second connector 42 moves closer to or away from the hooking groove C of the first connector 41; and the driving mechanism 50 can drive the second connector 42 to move up and down, so that the second connector 42 hooks onto or disengages from the hooking groove C of the first connector 41.

[0036] Specifically, the connecting part 411 includes a first connecting block, which is fixedly connected to the heat insulation sleeve 30. The hooking part 412 includes a second connecting block, and a hooking groove C is provided on the side of the second connecting block near the heat insulation sleeve 30, with the opening of the hooking groove C facing the heat insulation sleeve 30. The first connecting block and the heat insulation sleeve 30 can be snap-fitted together or bolted together; the first connecting block and the second connecting block can be an integral structure or detachably connected to each other. The hooking groove C is provided on the second connecting block, and the hooking groove C can be a U-shaped groove, etc., without any specific limitation.

[0037] In some embodiments not shown, there is only one first connector 41, which includes a connecting portion 411 and at least one hooking portion 412. The connecting portion 411 has an annular structure and is connected to the heat insulation sleeve 30. Along the vertical direction S, each hooking portion 412 is disposed on the top of the connecting portion 411, and each hooking portion 412 is provided with a hooking groove C. The number of hooking portions 412 can be one or more. When there are multiple hooking portions 412, they are spaced apart circumferentially on the top of the connecting portion 411, and the multiple hooking portions 412 can be integrally formed with the connecting portion 411. The driving mechanism 50 can drive the second connector 42 to rotate, causing the second connector 42 to move closer to or further away from the hooking groove C of the first connector 41; and the driving mechanism 50 can drive the second connector 42 to move up and down, causing the second connector 42 to hook onto or detach from the hooking groove C of the first connector 41.

[0038] In the above embodiment, by setting the hook part 412 on the top of the connecting part 411 and providing the hook groove C on the hook part 412, when the second connecting member 42 rotates under the action of the driving mechanism 50, the first connecting member 41 will not interfere with the rotational movement of the second connecting member 42. This allows the second connecting member 42 to move smoothly to the bottom of the hook groove C so that the two can be hooked together when the second connecting member 42 moves upward and the hooked together when the second connecting member 42 moves downward. This cooperation method between the first connecting member 41 and the second connecting member 42 is simple and efficient, and facilitates the smooth entry and exit of the heat insulation sleeve 30 into and out of the first channel A of the cooling member 20.

[0039] In some embodiments, please refer to Figure 3The second connector 42 includes a main body 421 and at least one hook 422. The main body 421 is connected to the drive mechanism 50, such as by a threaded connection. Each hook 422 is located on the outer circumferential side of the main body 421, and each hook 422 corresponds to a hooking portion 412 of the first connector 41. The number of hooks 422 can be one or more. When there are multiple hooks 422, they are spaced apart circumferentially on the outer circumferential side of the main body 421. Specifically, the hooking groove C is a groove facing the bottom of the growth furnace 10, and the hook 422 is a rod-shaped structure that can be inserted into the hooking groove C so that the first connector 41 is hooked onto the second connector 42.

[0040] In this embodiment, by engaging the hooks 422 on the second connector 42 with the mounting slots C on the first connector 41, the first connector 41 can move up and down with the second connector 42, allowing the heat insulation sleeve 30 to smoothly enter and exit the first channel A of the cooling component 20. Furthermore, engaging multiple hooks 422 with multiple mounting slots C one by one improves the stability of the heat insulation sleeve 30 during its movement in and out of the first channel A of the cooling component 20.

[0041] In some embodiments, please refer to Figure 3 The main body 421 includes a connecting rod 4211 and a connecting block 4212. One end of the connecting rod 4211 is connected to the drive mechanism 50, and the connecting block 4212 is connected to the other end of the connecting rod 4211. Each hook 422 is connected to the connecting block 4212 on its circumferential outer side. Specifically, the connecting block 4212 may be a columnar structure, and the connecting rod 4211 may be a rod-shaped structure.

[0042] In some embodiments, please refer to Figure 3 The drive mechanism 50 includes a weight 51, a lifting drive assembly 52, and a rotation drive assembly 53. The weight 51 is connected to the connecting assembly 40. The lifting drive assembly 52 is connected to the weight 51 and is used to drive the weight 51 to move up and down. The rotation drive assembly 53 is connected to the weight 51 and is used to drive the weight 51 to move around.

[0043] It should be noted that the lifting drive assembly 52 can be any mechanism capable of realizing the lifting motion of the weight 51, such as a mechanism driven by a telescopic cylinder, and the rotation drive assembly 53 can be any mechanism capable of realizing the rotation motion of the weight 51, such as a mechanism driven by a rotary motor. This application does not make any specific limitations.

[0044] Understandably, in existing silicon rod growth systems, the system typically includes a counterweight mechanism. This mechanism usually comprises a counterweight and a lifting drive assembly connected to it. During the growth of the monocrystalline silicon rod, the rod is fixed by the counterweight, while the lifting drive assembly connected to one end of the counterweight can move the rod up and down. Specifically, the lifting or rotating of the counterweight can be achieved using the lifting mechanism in the existing silicon rod growth system.

[0045] Therefore, in this embodiment, the driving mechanism 50 of this application is at least partially a counterweight mechanism in a conventional silicon rod growth system to realize the entry and exit of the heat insulation sleeve 30 into and out of the cooling element 20 through the first channel A. Furthermore, after the heat insulation sleeve 30 is moved out of the cooling element 20 by the driving mechanism 50, the second connecting member 42 can be detached from the counterweight 51 of the driving mechanism 50, allowing the counterweight 51 to continue being used for fixing the single-crystal silicon rod. Therefore, by fully utilizing the existing counterweight mechanism in the silicon rod growth system for moving the heat insulation sleeve 30 after its installation, this application helps simplify the structure of the silicon rod growth system and reduce its manufacturing cost.

[0046] Alternatively, the drive mechanism 50 connected to the second connector 42 can also be independent of the counterweight mechanism. That is, in the silicon rod growth system, the drive mechanism 50 and the counterweight mechanism coexist.

[0047] In some embodiments, please refer to Figure 1 and Figure 2 The growth furnace 10 includes a furnace body 11 and a furnace cover 12 for sealing or opening the furnace body 11. The silicon rod growth system also includes a heat insulation plate 60 and an adjustment assembly 70. The heat insulation plate 60 is disposed within the growth furnace 10, and the adjustment assembly 70 is disposed on the growth furnace 10 and at least partially located within the growth furnace 10, connected to the heat insulation plate 60. The adjustment assembly 70 is used to move the heat insulation plate 60 to seal or open the first channel A. Specifically, the heat insulation plate 60 can be made of a low thermal conductivity, high insulation material such as soft felt or solid felt.

[0048] During the melting stage, the position of the heat insulation plate 60 can be adjusted by adjusting component 70 so that the heat insulation plate 60 is positioned above and blocks the first channel A. This reduces the amount of heat transferred from the growth furnace 10 to the furnace cover 12 via the cooling element 20, thereby reducing heat waste and further improving the melting efficiency during the melting stage. After the melting stage is completed, the heat insulation plate 60 can be moved by adjusting component 70 to open the first channel A, at which point other processes of the monocrystalline silicon rod (such as the feeding process and the monocrystalline silicon rod growth process) can be performed.

[0049] Therefore, in this embodiment, through the cooperation of the heat insulation plate 60 and the adjustment component 70, the heat insulation function of the heat insulation plate 60 can be activated during the melting stage to block the heat radiation from the growth furnace 10, thereby improving the thermal insulation performance of the growth furnace 10 and reducing heat loss, thus improving the melting efficiency during the melting stage. Furthermore, during the non-melting stage, the heat insulation function of the heat insulation plate 60 can be turned off, thus not affecting the normal growth process of the single crystal silicon rod, which helps to extend the service life of the entire heat insulation plate 60. In this embodiment, by setting the heat insulation sleeve 30, heat utilization can be improved, thereby reducing the melting time. Specifically, compared with the solution without a heat insulation sleeve, this embodiment can reduce the melting time by approximately 7%. Furthermore, if the heat insulation plate solution is superimposed, compared with the solution without a heat insulation sleeve and the heat insulation plate, this embodiment can reduce the melting time by approximately 10%.

[0050] In some embodiments, please refer to Figure 1 and Figure 2 The furnace cover 12 is provided with mounting holes T. The adjustment assembly 70 includes a rotating shaft 71 and a rotating mechanism 72. The rotating shaft 71 passes through the mounting hole T of the furnace cover 12 and is connected to the heat insulation plate 60. The rotating mechanism 72 is connected to the rotating shaft 71 and drives the rotating shaft 71 to rotate so that the heat insulation plate 60 blocks or opens the first channel A.

[0051] The rotating mechanism 72 drives the rotating shaft 71 to rotate, thereby adjusting the position of the heat insulation plate 60. This allows the heat insulation plate 60 to block or open the first channel A. This method is simple and convenient and can be applied to the high-temperature environment inside the growth furnace 10. Specifically, the rotating mechanism can be a motor-driven mechanism, a hydraulic or pneumatic driven mechanism, or even a handheld rotating mechanism, as long as it can drive the rotating shaft to rotate.

[0052] In some embodiments, please refer to Figure 1 and Figure 2 The silicon rod growth system also includes a heat shield 80, a crucible 90, and a heater 100. The heat shield 80 is disposed inside the growth furnace 10, the cooling element 20 is disposed inside the heat shield 80, the crucible 90 is disposed below the heat shield 80 and is used to contain silicon material, and the heater 100 is disposed outside the crucible 90 and is used to heat the crucible 90 so that the silicon material inside the crucible 90 can reach a molten state and grow silicon rods.

[0053] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A silicon rod growth system, characterized in that, include: Growth furnace (10); A cooling element (20) is disposed within the growth furnace (10), the cooling element (20) having a first channel (A); and A heat insulation sleeve (30) is at least partially disposed within a first channel (A) of the cooling element (20), and the heat insulation sleeve (30) has a second channel (B) that at least partially overlaps with the first channel (A).

2. The silicon rod growth system according to claim 1, characterized in that, The heat insulation sleeve (30) covers at least a portion of the inner wall surface of the first channel (A) of the cooling element (20).

3. The silicon rod growth system according to claim 2, characterized in that, The heat insulation sleeve (30) includes a first cylindrical portion (31), and the cooling component (20) includes a first straight wall portion (210); the first cylindrical portion (31) is in contact with the inner wall of the first straight wall portion (210).

4. The silicon rod growth system according to claim 3, characterized in that, The heat insulation sleeve (30) also includes a cylindrical connecting part (32) and a second straight cylindrical part (33); The inner diameter of the second straight cylindrical section (33) is larger than the inner diameter of the first straight cylindrical section (31); the two ends of the cylindrical connecting section (32) are respectively connected to the first straight cylindrical section (31) and the second straight cylindrical section (33).

5. The silicon rod growth system according to claim 4, characterized in that, The cooling component (20) includes a first heat exchanger (21) and a second heat exchanger (22) that are detachably connected; the first heat exchanger (21) includes a first straight wall portion (210); At the connection between the first heat exchanger (21) and the second heat exchanger (22), the cylinder connection (32) has clearance space on the side near the cooling element (20).

6. The silicon rod growth system according to claim 1, characterized in that, The silicon rod growth system also includes: The connecting assembly (40) is connected to the heat insulation sleeve (30); and A drive mechanism (50), connected to the connecting assembly (40), is used to drive the connecting assembly (40) to move so that the heat insulation sleeve (30) enters and exits the first channel (A) of the cooling component (20).

7. The silicon rod growth system according to claim 6, characterized in that, The connection component (40) includes: At least one first connector (41) is connected to the heat insulation sleeve (30); and The second connector (42) is connected to the drive mechanism (50), and the second connector (42) can change position relative to the first connector (41) under the action of the drive mechanism (50) to connect or disconnect the first connector (41).

8. The silicon rod growth system according to claim 7, characterized in that, The first connector (41) includes: The connecting part (411) is connected to the heat insulation sleeve (30); and The hook part (412) is provided on the top of the connecting part (411), and the hook part (412) is provided with a hook groove (C). The drive mechanism (50) drives the second connector (42) to rotate to move closer to or further away from the hook slot (C); and can drive the second connector (42) to move up and down to hook or detach from the hook slot (C).

9. The silicon rod growth system according to claim 8, characterized in that, The connecting part (411) includes a first connecting block, which is fixedly connected to the heat insulation sleeve (30); the hanging part (412) includes a second connecting block, which has a hanging groove (C) on the side near the heat insulation sleeve (30), and the opening of the hanging groove (C) faces the heat insulation sleeve (30).

10. The silicon rod growth system according to claim 7, characterized in that, The second connector (42) includes: The main body (421) is connected to the drive mechanism (50); and At least one hook (422) is disposed on the circumferential outer side of the main body (421), and each hook (422) corresponds to one of the first connectors (41).

11. The silicon rod growth system according to claim 6, characterized in that, The drive mechanism (50) includes: The hammer (51) is connected to the connecting assembly (40); The lifting drive assembly (52) is used to drive the weight (51) to move up and down; and A rotary drive assembly (53) is used to drive the weight (51) to rotate.

12. The silicon rod growth system according to any one of claims 1-11, characterized in that, The silicon rod growth system also includes: A heat insulation plate (60) is disposed inside the growth furnace (10); and An adjustment component (70) is installed on the growth furnace (10) and connected to the heat insulation plate (60); the adjustment component (70) is used to drive the heat insulation plate (60) to move so that the heat insulation plate (60) blocks or opens the first channel (A).

13. The silicon rod growth system according to claim 12, characterized in that, The growth furnace (10) includes a furnace body (11) and a furnace cover (12) for sealing or opening the furnace body (11), the furnace cover (12) being provided with mounting holes (T); The adjustment assembly (70) includes a rotating shaft (71) and a rotating mechanism (72). The rotating shaft (71) passes through the mounting hole (T) and is connected to the heat insulation plate (60). The rotating mechanism (72) is connected to the rotating shaft (71) and drives the rotating shaft (71) to rotate so that the heat insulation plate (60) blocks or opens the first channel (A).

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