An igbt power module cooling device

Abstract

This utility model provides a cooling device for an IGBT power module, belonging to the field of IGBT technology. It includes: an IGBT power module body, a substrate body mounted on the lower wall of the IGBT power module body, a heat-conducting structure mounted on the lower wall of the substrate body, and a heat dissipation structure mounted on the lower wall of the heat-conducting structure. This device combines passive and active heat dissipation, automatically switching within a temperature threshold. While ensuring normal IGBT operation, it minimizes energy consumption. Active heat dissipation is achieved through a cooling semiconductor. Compared to mechanical air cooling, the cooling semiconductor has no moving parts, operates very quietly with almost no vibration, and ensures stable IGBT operation. Simultaneously, the cooling semiconductor has low thermal inertia, reaching its maximum temperature difference in less than one minute after being powered on, resulting in very fast cooling.

Description

Technical Field

[0001] This utility model belongs to the field of IGBT technology, and specifically relates to an IGBT power module cooling device. Background Technology

[0002] IGBT is an abbreviation for Insulated Gate Bipolar Transistor. It is a fully controllable voltage-driven power semiconductor device composed of an insulated gate field-effect transistor and a bipolar transistor. It controls the turn-on and turn-off by the gate voltage, combining the advantages of the high input impedance of the insulated gate field-effect transistor and the low on-state voltage drop of the bipolar transistor. It can efficiently realize power conversion and regulation and is widely used in medium and high power scenarios such as electric drive systems for new energy vehicles, photovoltaic / wind power inverters, industrial frequency converters, rail transit traction and smart home appliances. It is known as the "CPU" of the power electronics field.

[0003] As electronic components become increasingly integrated, IGBTs require more computing power, leading to greater heat accumulation. One IGBT power module cooling device (publication number CN203707107U) incorporates an internal airflow channel within the IGBT power module, allowing internal auxiliary components to be directly cooled by air. The vertical arrangement of the fan and heat exchanger facilitates hot air exhaust, reduces the power consumption of the axial fan, and lowers electricity costs. However, this cooling solution involves rotating parts, which generates vibration compared to passive cooling, potentially affecting the stable operation of the IGBT. Furthermore, this air-cooling method is not conducive to the smaller integration of IGBTs. Utility Model Content

[0004] To address the issues raised by existing heat dissipation solutions, which involve rotating parts and generate vibrations compared to passive cooling, thus hindering stable IGBT operation, this method also impedes the miniaturization of IGBTs. This invention provides an IGBT power module cooling device that utilizes a cooling semiconductor for active heat dissipation. Compared to mechanical air cooling, the cooling semiconductor has no moving parts, operates very quietly with virtually no vibration, and ensures stable IGBT operation. The specific technical solution is as follows: An IGBT power module cooling device includes: an IGBT power module body; a substrate body is mounted on the lower wall of the IGBT power module body; a heat-conducting structure is mounted on the lower wall of the substrate body; and a heat dissipation structure is mounted on the lower wall of the heat-conducting structure. The heat-conducting structure includes: a heat spreader plate, a heat spreader mounting groove, and a heat spreader locking plate. The heat spreader plate is fixedly mounted on the lower wall of the substrate body; the heat spreader mounting groove is located on the side wall of the heat spreader plate; and the heat spreader locking plate is located inside the heat spreader mounting groove. The heat spreader mounting groove and the heat spreader locking plate form a cavity, and a temperature sensor is installed inside the cavity.

[0005] Preferably, the substrate body is made of aluminum nitride ceramic substrate with high thermal conductivity.

[0006] Preferably, the heat dissipation structure includes: a cooling semiconductor, a heat dissipation base, and a plurality of heat dissipation fins; the cooling semiconductor is mounted on the lower wall of the heat spreader, the heat dissipation base is stepped and is mounted on the lower wall of the cooling semiconductor and the substrate body, and the plurality of heat dissipation fins are equidistantly mounted on the lower wall of the heat dissipation base.

[0007] Preferably, the cooling surface of the cooling semiconductor is in contact with the heat spreader, and the heat dissipation surface of the cooling semiconductor is in contact with the heat dissipation base.

[0008] Preferably, a high temperature warning sign is installed on the lower wall surface of some of the heat dissipation fins.

[0009] Preferably, a plurality of heat dissipation copper pipes are horizontally installed between the plurality of heat dissipation fins, and the plurality of heat dissipation copper pipes are welded between the plurality of heat dissipation fins.

[0010] Preferably, four module mounting brackets are installed on the lower wall of the substrate body.

[0011] Preferably, the IGBT power module body and the substrate body are connected by four bolts and nuts, and the four nuts are respectively embedded in the substrate body.

[0012] The IGBT power module cooling device of this utility model has the following advantages compared with the prior art: This IGBT power module cooling device combines passive and active heat dissipation, automatically switching within the temperature threshold. It ensures minimal energy consumption while guaranteeing the normal operation of the IGBT. Furthermore, the active heat dissipation is achieved through a cooling semiconductor. Compared with mechanical air cooling, the cooling semiconductor has no moving parts, operates very quietly with almost no vibration, and can ensure stable operation of the IGBT. At the same time, the cooling semiconductor has low thermal inertia, and can reach the maximum temperature difference in less than one minute after being powered on, resulting in a very fast cooling speed. Attached Figure Description

[0013] Figure 1 A schematic diagram of the first overall structure of the IGBT power module cooling device provided by this utility model; Figure 2 A schematic diagram of the second overall structure of the IGBT power module cooling device provided by this utility model; Figure 3 An exploded view of a first partial structure of the IGBT power module cooling device provided by this utility model; Figure 4 An exploded view of the second partial structure of the IGBT power module cooling device provided by this utility model; in, Figures 1 to 4 The reference numerals and components in the attached diagram for the IGBT power module cooling device are as follows: 1. IGBT power module body; 2. Substrate body; 3. Heat spreader; 4. Heat spreader mounting slot; 5. Heat spreader fastening plate; 6. Cooling semiconductor; 7. Heat sink base; 8. Heat sink fins; 9. High temperature warning sign; 10. Heat dissipation copper pipe; 11. Module mounting bracket. Detailed Implementation

[0014] The following are specific implementation cases and appendices. Figures 1-4The present invention will be further described below, but it is not limited to these embodiments. The present invention provides a technical solution: an IGBT power module cooling device, comprising: an IGBT power module body 1, a substrate body 2 mounted on the lower wall of the IGBT power module body 1, a heat-conducting structure mounted on the lower wall of the substrate body 2, and a heat dissipation structure mounted on the lower wall of the heat-conducting structure; the heat-conducting structure includes: a heat-spreading plate 3, a heat-spreading mounting groove 4, and a heat-spreading fastening plate 5; the heat-spreading plate 3 is fixedly mounted on the lower wall of the substrate body 2, the heat-spreading mounting groove 4 is located on the side wall of the heat-spreading plate 3, the heat-spreading fastening plate 5 is located inside the heat-spreading mounting groove 4, and the interiors of the heat-spreading mounting groove 4 and the heat-spreading fastening plate 5 form a cavity, a temperature sensor is installed inside the cavity, the substrate body 2 is made of a high thermal conductivity aluminum nitride ceramic substrate, four module mounting brackets 11 are mounted on the lower wall of the substrate body 2, and the IGBT power module body 1 and the substrate body 2 are connected by four bolts and nuts, with the four nuts respectively embedded in the substrate body 2.

[0015] As a preferred embodiment, the heat dissipation structure further includes: a cooling semiconductor 6, a heat dissipation base 7, and several heat dissipation fins 8; the cooling semiconductor 6 is mounted on the lower wall of the heat spreader 3, the heat dissipation base 7 is stepped and is mounted on the lower wall of the cooling semiconductor 6 and the substrate body 2, several heat dissipation fins 8 are equidistantly mounted on the lower wall of the heat dissipation base 7, the cooling surface of the cooling semiconductor 6 is in contact with the heat spreader 3, the heat dissipation surface of the cooling semiconductor 6 is in contact with the heat dissipation base 7, a high temperature warning sign 9 is installed on the lower wall of the several heat dissipation fins 8, several heat dissipation copper pipes 10 are horizontally installed between the several heat dissipation fins 8, and the several heat dissipation copper pipes 10 are welded between the several heat dissipation fins 8.

[0016] Working principle: When using the IGBT power module body 1, the operator first installs the IGBT power module body 1 in the designated position using the module mounting bracket 11. The module mounting bracket 11 can be fixed with four bolts.

[0017] When the IGBT power module body 1 starts working, the heat generated is transferred to the substrate body 2 through fillers such as silicone grease.

[0018] This device has two heat dissipation modes: passive heat dissipation mode and active heat dissipation mode. Passive heat dissipation mode is the normal state. Under normal state, the heat generated by the IGBT power module body 1 is transferred through the substrate body 2 to the heat dissipation base 7, then to several heat dissipation fins 8 and heat dissipation copper pipes 10, and finally to the atmosphere for passive heat dissipation.

[0019] When the thermal sensor inside the heat spreader mounting slot 4 detects that the temperature exceeds the set threshold, the cooling semiconductor 6 starts working. The cooling surface of the cooling semiconductor 6 generates a low temperature, which absorbs the heat from the heat spreader 3, thereby reducing the temperature of the heat spreader 3. When the temperature of the heat spreader 3 drops to the set threshold, the cooling semiconductor 6 stops working. At the same time, the heat dissipation surface of the cooling semiconductor 6 generates a large amount of heat, which is transferred to the heat dissipation base 7 and several heat dissipation fins 8, and finally the heat is dissipated into the atmosphere. Through automatic switching between passive and active heat dissipation modes, the minimum energy consumption is ensured while ensuring the normal operation of the IGBT power module body 1. The upper wall of the IGBT power module body 1 is provided with several connection terminals, including terminals that supply power to the IGBT power module body 1. The cooling semiconductor 6 is connected in parallel with these power supply terminals. The lower wall of the several heat dissipation fins 8 is provided with a "Caution: High Temperature!!!" high temperature warning sign 9 to remind operators and prevent burns.

[0020] The substrate body 2 uses a high thermal conductivity aluminum nitride ceramic substrate, which has a thermal conductivity much higher than that of traditional alumina. This allows for more efficient transfer of heat from the chip to the substrate body 2, thereby preventing heat buildup in the IGBT power module body 1.

[0021] In the description of this utility model, the term "multiple" refers to two or more. Unless otherwise explicitly defined, the terms "upper," "lower," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. The terms "connection," "installation," "fixing," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in this utility model can be understood according to the specific circumstances.

[0022] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. An IGBT power module cooling device, comprising: IGBT power module body (1), the lower wall of the IGBT power module body (1) is mounted with a substrate body (2), characterized in that a heat-conducting structure is mounted on the lower wall of the substrate body (2), and a heat dissipation structure is mounted on the lower wall of the heat-conducting structure; the heat-conducting structure includes: a heat-spreading plate (3), a heat-spreading mounting groove (4) and a heat-spreading fastening plate (5); the heat-spreading plate (3) is fixedly mounted on the lower wall of the substrate body (2), the heat-spreading mounting groove (4) is located on the side wall of the heat-spreading plate (3), the heat-spreading fastening plate (5) is located inside the heat-spreading mounting groove (4), the heat-spreading mounting groove (4) and the heat-spreading fastening plate (5) form a cavity, and a temperature sensor is installed inside the cavity.

2. The IGBT power module cooling device according to claim 1, characterized in that, The substrate body (2) is made of aluminum nitride ceramic substrate with high thermal conductivity.

3. The IGBT power module cooling device according to claim 1, characterized by, The heat dissipation structure includes: a cooling semiconductor (6), a heat dissipation base (7), and a plurality of heat dissipation fins (8); the cooling semiconductor (6) is mounted on the lower wall of the heat spreader (3), the heat dissipation base (7) is stepped, and the heat dissipation base (7) is mounted on the lower wall of the cooling semiconductor (6) and the substrate body (2), and the plurality of heat dissipation fins (8) are equidistantly mounted on the lower wall of the heat dissipation base (7).

4. The IGBT power module cooling device according to claim 3, characterized in that, The cooling surface of the cooling semiconductor (6) is in contact with the heat spreader (3), and the heat dissipation surface of the cooling semiconductor (6) is in contact with the heat dissipation base (7).

5. The IGBT power module cooling device according to claim 3, characterized by, A high temperature warning sign (9) is installed on the lower wall surface of several of the heat dissipation fins (8).

6. The IGBT power module cooling device according to claim 3, characterized by, A plurality of heat dissipation copper pipes (10) are horizontally installed between a plurality of heat dissipation fins (8), and the plurality of heat dissipation copper pipes (10) are welded between a plurality of heat dissipation fins (8).

7. The IGBT power module cooling device of claim 1, wherein, Four module mounting brackets (11) are installed on the lower wall of the substrate body (2).

8. The IGBT power module cooling device of claim 1, wherein, The IGBT power module body (1) and the substrate body (2) are connected by four bolts and nuts, and the four nuts are respectively embedded in the substrate body (2).

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