A silicon carbide device and a method for forming a silicon carbide device

DE102014104201B4Undetermined Publication Date: 2026-06-25INFINEON TECHNOLOGIES AG
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Patent Information

Application Number
DE102014104201P0
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2013-09-23
Filing Date
2014-03-26
Publication Date
2026-06-25
Estimated Expiration
2034-03-26

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Abstract

Silicon carbide device (100) comprising: a silicon carbide substrate (110); an inorganic passivation layer structure (120) that at least partially covers a major surface (112) of the silicon carbide substrate (110); and a molding compound layer (130) in direct contact with and adjacent to the inorganic passivation layer structure (120).
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Citation Information

Patent Citations

  • Semiconductor chip and process for production thereof

    US20120138951A1

  • Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability

    US6023078A