POWER MEASURING SYSTEM AND POWER MEASURING DEVICE

Abstract

A current sensing system comprises a sensor unit arranged in a sensing current path and configured to detect current density in the sensing current path, a switching unit configured to receive a control signal and, in response to receiving the control signal, to switch a bypass resistor in parallel with the sensor unit, thereby forming a controllable bypass current path.

Description

TECHNICAL AREA

[0001] The present disclosure relates to a current sensing system comprising a sensor unit arranged in a sensing current path and configured to detect current density in the sensing current path. The disclosure further relates to a current sensing device. BACKGROUND

[0002] Conventional current sensors have limited resolution and a limited measuring range. This is especially true for sensors that use the Hall principle (Hall sensors) and tunnel magneto-resistive sensors (TMR sensors).

[0003] In many applications, Hall sensors and TMR sensors are housed in molded packages. When larger measurement ranges need to be covered, it has been suggested to use multiple sensors for different sections of the measurement range.

[0004] Therefore, there is a general need for enclosed sensor systems with a larger measuring range. Furthermore, thermal management of sensors in molded housings becomes necessary at high currents.

[0005] Therefore, there is an additional need for enclosed sensor systems with an increased measuring range along with increased heat capacity. SUMMARY

[0006] According to a first aspect of the disclosure, a current sensing system is provided, the system comprising: a sensor unit arranged in a sensing current path and configured to sensing a current density in the sensing current path, a switching unit configured to receive a control signal and, in response to receiving the control signal, to switch a bypass resistor in parallel with the sensor unit, thereby forming a controllable bypass current path.

[0007] A sensor unit is arranged in a current sensing path, which can also be called a current measurement path. The sensor unit can be any type of current sensor, but can specifically be a current sensor based on magnetic flux sensing. All sensors have a predefined measurement range, that is, a range of current that they are configured to detect with a specific predefined resolution. However, currents in the current sensing path that exceed the current measurement range of the sensors cannot be detected due to saturation effects in the sensor.

[0008] Therefore, when a certain threshold current, corresponding to a threshold current density in the sensing current path, is reached, a control signal is provided. A switching unit configured to receive the control signal then connects a bypass resistor in parallel with the sensor unit. This facilitates the parallel connection of the bypass resistor and the resistance of the sensor unit. Thus, a certain amount of the total current in the sensing current path will flow through the bypass resistor, and a smaller amount will flow through the sensor unit. Since the amount of current flowing through the bypass resistor is known, the total current can be determined by calculating a value of the bypass current and adding the value of the current sensed by the sensor unit. This provides an extended sensing range for the sensor unit. The amount of total current is `loverall` = `Isensed` * (1 + `Rsensor unit` / `Rbypass`).

[0009] Initially, the sensor unit can be used to detect higher total currents, as higher currents are possible at the sensor unit with higher total currents. Typically, a current detection system with a measuring range of up to 50 amperes is provided in a DSO 300 MIL enclosure. By extending the measuring range as disclosed, current measurement of at least 70 amperes is possible with standard sensors.

[0010] Secondly, the resolution of the sensor unit can be improved while keeping the overall current measurement capacity of the current sensing system constant. That is, a standard resolution of, for example, 200 mA at a maximum current of 50 A could be further reduced while maintaining the maximum current. This is particularly relevant for battery management systems where relatively high load currents need to be monitored, but where, for example, the detection of very low leakage currents is also desirable.

[0011] Thirdly, when currents extend the measuring range of a magnetic current sensor, the sensor enters a saturated state, meaning the measured magnetic flux density reaches its limit. However, as the current decreases, this saturation is not completely reversible, and the sensor may exhibit hysteresis effects with respect to the magnetic flux density. These hysteresis effects can affect the measurement accuracy. Therefore, an extended measuring range can be advantageous for protecting magnetic current sensors from damage caused by overcurrents.

[0012] Fourth, splitting the current path allows for a more even distribution of thermal effects caused by the ohmic resistance in the sampling current path and the bypass current path. Thus, splitting the sampling current path can also be used to manage the distribution of heat energy within the current sensing system.

[0013] In one embodiment, the switching unit is a controllable semiconductor element, and the bypass resistance is an internal resistance of the controllable semiconductor element. The switching unit can, in particular, be a controllable semiconductor transistor die. The controllable semiconductor transistor die has an internal resistance known as the drain-source-on resistance (RDS). ,ON , can be described as . That is, in an on state, when the bypass current path is conducting through the switching unit, a resistance of the bypass current path is determined by the RDS. ,ON The semiconductor transistor die provides the necessary resistance. No additional bypass resistor is required. If the controllable semiconductor element is a MOSFET, the drain-source-on resistor (RDS) can be used. ,ON also referred to as collector-emitter on-resistor.

[0014] In one embodiment, the system includes logic configured to provide the control signal to the switching unit.

[0015] In another embodiment, the current sensing system comprises a conductor frame forming the sensing current path, the conductor frame having a first and a second section, each section of the first and second section comprising a set of external connectors. The sensing current path can be a section of a conductor frame or any other electrical connection. For example, the sensing current path on an insulator substrate can be formed by a structured metallization layer that creates different functional sections. Each section of the first and second sections of the conductor frame can have a set of connectors. The external connectors can connect the current sensing system to the outside world.The external connectors can be conductors that are integral parts of the conductor frame, or they can be separate pins or wires with respective connecting sections on the conductor frame. The first set of external connectors can be power inlet connectors, and the second set of external connectors can be power outlet connectors.

[0016] In one embodiment, the ladder frame comprises a third section, wherein the third section comprises a bottleneck section and wherein the third section is arranged between the first section and the second section of the ladder frame.

[0017] The third section can be a connecting section that links the first and second sections of the conductor frame, i.e., it forms a connection between the current inlet connectors and the current outlet connectors. The third section is also part of the sensing current path. It can include or consist of a constriction section. That is, the third section can be shaped or otherwise configured to provide a current sensing section where the current in the sensing current path is actually measured. Therefore, the third section can be configured to meet the boundary conditions of the sensor unit for proper current sensing.

[0018] In particular, the third section may include a crest section configured to promote a higher current density during operation of the current sensing system than a current density in other sections of the sensing current path, and wherein the sensor unit is located adjacent to the crest section.

[0019] The apex section can be the apex of a V- or U-shaped third section. The sensor unit can be located adjacent to the apex section and separated from it by a separating layer. The separating layer can be made of a molding compound, an underfill material such as polyimide, or a glass substrate. The separating layer can be located between the conductor frame and the sensor unit.

[0020] In one embodiment, the first section and / or the second section is configured to support the controllable semiconductor element. The first section of the conductor frame or the second section of the conductor frame can serve as a die support or a die pad configured to mount the controllable semiconductor element. In particular, the controllable semiconductor element can be attached to the first or second section of the conductor frame by a bonding layer that may be located between the die support and a rear-facing first load electrode of the controllable semiconductor die. The bonding layer can be constructed, for example, by soft soldering, sintering, or diffusion soldering.

[0021] In one embodiment, the controllable semiconductor element is a transistor, preferably a MOSFET, a JFET, an IGBT, a GaN-HEMT or a bipolar transistor; and wherein the controllable semiconductor element comprises the first load electrode, a second load electrode and a control electrode, wherein the control signal is received by the logic via the control electrode.

[0022] The controllable semiconductor element is coupled between the first and second sections of the conductor frame, thereby forming the controllable bypass current path. For example, the controllable semiconductor element can be coupled to the first load electrode in the first section of the conductor frame.

[0023] This means that the first load electrode can be coupled to a first surface of the first section of the conductor frame, and the second load electrode can be coupled to a first surface of the second section of the conductor frame by bond wires or a clip. The second section of the conductor frame can include a landing section to which electrical connectors from the second load electrode are electrically bonded. The landing section can also be a diode, which can be attached to the first surface of the second section of the conductor frame. Thus, the controllable bypass current path between the first load electrode of the controllable semiconductor element on the first section of the conductor frame and the landing section on the second section of the conductor frame is defined. The control electrode can be electrically coupled to the logic.

[0024] In particular, the logic can be a gate driver logic configured to receive a current value from the sensor unit and, when the current value reaches a predefined threshold, to generate a gate signal for the controllable semiconductor element.

[0025] If the controllable semiconductor element is a self-blocking element, it can be switched to an ON state upon receiving the gate signal, thus allowing bypass current flow through the controllable bypass current path. If the controllable semiconductor element were a "self-blocking element," the signal logic would be reversed. The controllable semiconductor element can be configured to remain in the ON state as long as the control / gate signal is present, that is, as long as the signal level at the control electrode is high. When the current value received from the sensor unit falls below the predefined threshold, the gate signal can be set low by the logic. When the gate signal is low, the controllable semiconductor element can be switched to an OFF state, which can be a non-conducting state, thus interrupting current flow through the bypass current path.

[0026] Alternatively, the gate signal can be terminated when a second predefined threshold of the detected current is reached.

[0027] In one embodiment, the current sensing system comprises an encapsulating means that encapsulates at least a portion of the first section, the second section, and the third section of the conductor frame, the switching element, and the sensor unit, wherein the encapsulating means forms a molded housing of the current sensing system. The encapsulating means may form a molded body of a molded housing.

[0028] In one embodiment, the current sensing system is a dual in-line package (DIP). A DIP is a rectangular package with two parallel rows of electrical connection pins, also known as leads. These pins can be evenly spaced and are typically 0.1 inches (2.54 mm) apart, a standard spacing in the electronics industry. The current sensing system can be designed to be inserted into a socket using through-hole (THD) technology or mounted directly onto a printed circuit board (PCB). However, the package can also be a surface-mount device (SMD).

[0029] In one embodiment, a second surface of the first section of the conductor frame and / or a second surface of the second section of the conductor frame, which is opposite the first surface, is configured to be thermally coupled to a heat sink.

[0030] At higher currents, thermal management of the sensor system becomes more important; that is, heat dissipation from the molded package may be necessary. By thermally coupling the second surface (i.e., the back surface) of the first and second sections of the conductor frame to a heat sink, heat generated by ohmic resistance in the scanning current path and the bypass current path can be dissipated from the sensor unit and the controllable semiconductor die.

[0031] Therefore, the molded package can include a recess over the secondary surfaces of the first and second sections of the conductor frame, with the recess exposing the secondary surfaces and forming an outermost surface of the molded package. The recess allows the encapsulating material to be completely removed from the rear surfaces of the first and second sections of the conductor frame. The rear surfaces of the first and second sections of the conductor frame can be exposed, forming exposed die pads. The rear surfaces of the first and second sections of the conductor frame can form a planar surface at the outermost surface of the molded package or can be exposed within the recesses.

[0032] In one embodiment, a thermal interface material (TIM) is arranged in contact with the second surface exposed in the recess, the TIM filling the recess to form an outermost planar surface of the formed housing. By using a TIM, the exposed back surfaces of the first and second sections of the conductor frame are covered by an electrically insulating but thermally conductive material.

[0033] In one embodiment, the first and second sets of external connectors protrude from the housing body on a first section of a circumferential surface, and external measuring connectors connected to the sensor unit protrude from a second section of the circumferential surface opposite the first section of the circumferential surface. In a DIP (Digit-In-Place) design, the first and second sets of external connectors, i.e., the current connectors, protrude from a first side of the housing body, whereas the external measuring connectors protrude from a second side of the housing body opposite the first side.

[0034] In one embodiment, the sensor unit comprises the logic; or the sensor unit comprises a housing and the logic is an application-specific integrated circuit (ASIC) located within the sensor unit's housing; or the logic is contained within a logic unit. The logic may be part of or contained within the sensor unit, or it may be located in another part of the system, separate from the sensor unit.

[0035] In one embodiment, the current sensing system comprises a heat sink; and / or a solid-state circuit breaker configured to interrupt a load current path upon receiving a second control signal from the logic; and / or the logic unit.

[0036] In addition to the heat sink, the system can also include a solid-state circuit breaker (SSCB). When a current value is measured that may exceed a third threshold, the logic can generate a second control signal for the SSC. The SSC can interrupt the sensing current path upon receiving this second control signal.

[0037] In one embodiment, the sensor unit is configured to detect the current density by measuring a magnetic field or magnetic flux density; in particular, the sensor unit comprises a Hall sensor, a GMR sensor, an AMR sensor or a TMR sensor.

[0038] According to a second aspect of the disclosure, a sensor device is provided, the sensor device comprising: a sensor unit arranged in a sensing current path; logic configured to provide a control signal; a switching unit configured to receive the control signal and, in response to receiving the control signal, to switch a bypass resistor in parallel with the sensor unit, thereby forming a controllable bypass current path; an encapsulating means forming a shaped housing of the sensor device; a conductor frame comprising a first section, a second section, and a third section, the third section forming a constriction section of the sensing current path;wherein the switching unit in an ON state has an internal resistance which forms the bypass resistance, and is coupled between the first and second sections, thereby forming the controllable bypass current path, and wherein the sensor unit is located adjacent to the constriction section. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Exemplary embodiments of the disclosure are described with reference to the following figures: Fig. Figure 1 shows a schematic view of an exemplary embodiment of the disclosure. Fig. 2 is a schematic diagram of some aspects of the revelation. Fig. Figure 3 is a schematic diagram of some aspects of the Revelation. Fig. Figure 4 is a cross-sectional view of some embodiments of the disclosure. Fig. Figure 5 is a three-dimensional view of an exemplary case of the Revelation. Fig. Figures 6A to D show further embodiments of exemplary bypass connections according to the disclosure. DETAILED DESCRIPTION

[0040] The following detailed description refers to the accompanying drawings. The drawings show specific examples in which the invention can be implemented. It is understood that the features and principles described in relation to the various examples can be combined with one another unless expressly stated otherwise. As in the claims, designations of certain elements as "first element," "second element," "third element," etc., are not to be understood as enumerative. Instead, such designations serve solely to refer to different "elements." That is to say, for example, that the existence of a "third element" does not require the existence of a "first element" and a "second element."An electrical conductor, as described herein, may be a single electrically conductive element or may include at least two single electrically conductive elements connected in series and / or parallel. Electrical conductors may include metal and / or semiconductor material and may be permanently electrically conductive (i.e., non-switchable). An electrical conductor may have an electrical resistance that is independent of the direction of any current flowing through it. A semiconductor body, as described herein, may be made of (doped) semiconductor material and may be a semiconductor chip or be contained within a semiconductor chip. A semiconductor body has electrically connected pads and includes at least one semiconductor element with electrodes. The pads are electrically connected to the electrodes, implying that the pads are the electrodes and vice versa.

[0041] Fig. Figure 1 shows a current sensing system 1. The current sensing system 1 comprises a housing body 2. The housing body 2 consists of an encapsulating material, which may be a molding compound. The current sensing system 1 includes a sensor unit 3. The sensor unit 3 is arranged above a top section 4 of a conductor frame 5.

[0042] The ladder frame 5 comprises a first section 6, a second section 7, and a third section 8. The third section 8 is a bottleneck section 8. The apex section 4 is part of the bottleneck section 8.

[0043] Both the first section of the conductor frame 6 and the second section of the conductor frame 7 form die pads. The conductor frame 5 forms a sensing current path. In particular, both the first section of the conductor frame 6 and the second section of the conductor frame 7 include a set of external connectors 9.

[0044] A first set of external connectors 9a is connected to the first section of the conductor frame 6 and forms a current inlet section, wherein a second set of external connectors 9b is connected to the second section of the conductor frame 7 and forms a current outlet section.

[0045] A load current path is established between the first set of external connectors 9a and the second set of external connectors 9b via the third section 8 of the conductor frame.

[0046] The first and second sets of external connectors 9a, 9b protrude from the molding compound on a first circumferential surface 10 of the housing body 2. A set of external measuring connectors 12 protrudes from the housing body 2 on a second circumferential surface 11. The sensor unit 3 is electrically connected to the external measuring connectors 12, for example by wire bonds.

[0047] A switching element 13 is arranged on the first section of the conductor frame 6, which forms a die pad. The switching element 13 is a semiconductor transistor die 13a. The semiconductor transistor die 13a comprises a first load electrode 36 (not visible) on the bottom surface, via which it is attached to the first section of the conductor frame 6. Furthermore, the semiconductor transistor die 13a comprises a second load electrode 14 and a control electrode 15. The second load electrode 14 and the control electrode 15 are arranged on a top surface opposite the bottom surface on which the first load electrode 36 is located. The second load electrode 14 is coupled to a landing section 16 of the second section of the conductor frame 6 by a first electrical connector 17.

[0048] To ensure a sufficient safety distance corresponding to the applied voltages, the first section 6 of the conductor frame 5 is adequately spaced from the second section 7 of the conductor frame 5. Additionally, to improve creepage distance between the first and second sections 6, 7 of the conductor frame 5, a recess / pocket can be provided on the first circumferential surface 10 of the housing body 2 (not visible).

[0049] The control electrode 15 of the semiconductor transistor die 13a, which is an example of the controllable semiconductor element, is electrically coupled to the sensor unit 3 by a second electrical connector 18.

[0050] The sensor unit 3 comprises a logic IC 19, to which the control electrode 15 is connected. The logic IC 19 is configured to generate a control signal, which is a gate signal, and to provide the gate signal to the control electrode 15 of the semiconductor transistor die 13a via the second electrical connector 18. Upon receiving the gate signal, the semiconductor transistor die 13a is switched to an on state, that is, it electrically connects the first section of the conductor frame 6 to the second section of the conductor frame 7 via the first electrical connector 17. In the on state, the semiconductor transistor die 13a electrically connects the first and second sections 6, 7 of the conductor frame 5, thereby forming a bypass current path parallel to the load current path.As a result, a portion of the incoming current is routed directly to the second section 7 of the conductor frame 5 via the semiconductor transistor die 13 and the first electrical connectors 17. This portion of the current therefore bypasses the third section 8 of the conductor frame 5 and thus the sensor unit 3. A reduced portion of the current is routed through the third section 8 and therefore passes through the sensor unit 3.

[0051] Fig. Figure 2 shows a schematic view of the current sensing system 1. The sensor unit 3 is a current measuring unit. A switch 20 and a bypass resistor 21 are arranged in parallel to a sensing current path that passes through the sensor unit 3. Closing the switch 20 creates a bypass current path through the bypass resistor 21 and the switch 20 in parallel to the sensor unit 3.

[0052] According to the present disclosure, the switch 20 and the bypass resistor 21 are both contained within the semiconductor transistor die 13a. Therefore, the resistance of the bypass resistor 21 is equal to the drain-source on-resistance RDS. ,ON of the transistor die, that is, the resistance of the transistor die when it is switched to the on state by a gate signal.

[0053] Fig. Figure 3 shows a schematic diagram of the present disclosure. The current sensing system 1 comprises the sensor unit 3 and the switching element 13.

[0054] The sensor unit 3 comprises the logic IC 19 and a magnetic current sensor 22. The logic is a gate driver logic.

[0055] The magnetic current sensor 22 is configured to measure a magnetic field, preferably at a section of the load current path that has a high current density, that is, for example, the peak section 8.

[0056] An input value IS The detected current value is provided to logic IC 19. Logic IC 19 is configured to display the detected current value I. S to receive and the recorded current value I S with a predefined first threshold I TH,1 to compare. If the recorded current value I S equal to the predefined threshold I TH,1 If the threshold is reached or exceeded, the logic IC 19 is configured to generate the control signal and supply it to the switching element 13. The switching element is switched to the on state by the control signal and remains in the on state as long as the control signal is present.

[0057] Upon receiving the control signal, the switching element 13 opens the bypass current path.

[0058] If the recorded current value Is falls below a predefined second threshold I TH,2 When the control signal drops, logic IC 19 is configured to terminate the control signal. TH,1can immediately I TH,2 Upon termination of the control signal, which is a gate signal, the switching element 13 is moved from the ON state to a non-conducting OFF state, thereby interrupting the bypass current path.

[0059] Fig. Figure 4 shows another embodiment of the current detection system according to the disclosure.

[0060] The switching unit 13 is attached to a first surface 23 of the first section 6 of the conductor frame 5 and electrically coupled to a first surface 24 of the second section 7 of the conductor frame 5 via the first electrical connector 17. A second surface 25 of the first section 6 of the conductor frame 5 and a second surface 26 of the second section 7 of the conductor frame 5 are thermally coupled to a heat sink 27.

[0061] The molding compound 2 comprises a recess 28, the recess 28 exposing both the second surface 25, 26 of the first section 6 of the conductor frame 5 and the second section 7 of the conductor frame 5. The recess 28 is filled with a thermal interface material (TIM) 29. Together with the molding compound, the TIM 29 forms a planar top surface 30 of the housing body 2 of the current sensing system 1.

[0062] In the expanded view of Fig. Figure 4 shows an edge section 31 of the shaped housing 2. The edge section 31 includes a step 32 and a groove structure 33 to increase a creepage distance from the external connectors 9a to the heat sink 27.

[0063] Fig. Figure 5 shows a further embodiment of the current sensing system according to the disclosure. The current sensing system is a dual in-line package (DIP). The first and second sets 9a, 9b of external connectors project from opposite sides of a circumferential surface of the package body 2. The first set of external connectors 9a projects from the first circumferential surface 10, with the second set of external connectors 9b projecting from the second circumferential surface 11 opposite the first circumferential surface 10. The planar top surface 30 is formed by the molding compound 2 and the TIM 29, with which the recesses 28 in the molding compound are filled. The planar top surface 30 includes two TIM 29 sections to couple the first and second sections 6, 7 of the conductor frame 5 to a heat sink 27 (not shown).

[0064] Level 32 is again available in the expanded view of Fig. 5 shown. The step 32, which forms a circumferential edge of the uppermost surface of the housing body 2, forms a bump on the planar uppermost surface 30.

[0065] The Fig. 6A to Fig. Figure 6D shows several embodiments of the switching element 13, which connects the first section 6 of the conductor frame 5 to the second section 7 of the conductor frame 5.

[0066] In Fig. 6A, the switching element 13 is a vertical transistor die 13a, which is connected to the landing section 16 by the first electrical connector 17. The first electrical connector 17 comprises bond wires 34.

[0067] In Fig. 6B is the first electrical connector 17 a clip 35 that allows for a higher current carrying capacity.

[0068] In Fig. 6C, the switching element 13, is a lateral semiconductor transistor die 13, for example, a GaN HEMT or a lateral SiC MOSFET. The transistor die 13 is arranged between the first section 6 of the conductor frame 5 and the second section 7 of the conductor frame 5. A first load electrode 36 is coupled to the first section 6 of the conductor frame 5. The second load electrode 14 is coupled to the second section of the conductor frame 7. The insulating section 37 consists of an electrically insulating material and electrically insulates lateral surfaces of the transistor die 13 in the direction of the respective sections of the conductor frame 6 and 7.

[0069] In Fig.In 6D, the switching element 13 is a lateral device and is arranged on an insulated section of a substrate or in the molding compound. In this embodiment, the conductor frame 5 can be a first section of a metallization layer, the metallization layer being arranged on an insulator substrate 38. The switching element 13 can be arranged on an island section of the insulator substrate 38 between the first and second sections 6, 7 of the conductor frame 5. The first load electrode 36 is coupled to the first section 6 of the conductor frame 5, and the second load electrode 14 is coupled to the second section 7 of the conductor frame 5.

[0070] The switching element 13 comprises two gate electrodes 15, wherein one gate electrode can be configured to receive an on signal and the respective other gate electrode can be configured to receive an off signal. List of reference symbols 1 Current monitoring system 2 Housing bodies / molding compound 3 Sensor unit 4 Vertex section 5 ladder frames 6 first section of the ladder frame 7 second section of the ladder frame 8 third section of the ladder frame / bottleneck section 9 external connectors 9a first set of external connectors 9b second set of external connectors 10 first circumferential surface 11 second circumferential surface 12 external data acquisition connectors 13 Switching element 13a Semiconductor transistor die 14 second load electrode 15 Control electrode 16 Landing section 17 first electrical connector 18 second electrical connector 19 logic ICs 20 switches 21 Bypass resistance 22 magnetic current sensor 23 First surface of the first section of the ladder frame 24 first surface of the second section of the ladder frame 25 second surface of the first section of the ladder frame 26 second surface of the second section of the ladder frame 27 Heat sink 28 recess 29 TIM 30 planar uppermost surface 31 marginal section Level 32 33 Groove structure 34 bond wires 35 Clip 36 first load electrode 37 insulating section 38 Insulator substrate

Claims

[1] Power monitoring system, the system comprising: a sensor unit that is positioned in a sensing current path and configured to detect current density in the sensing current path, a switching unit configured to receive a control signal and, in response to receiving the control signal, to switch a bypass resistor in parallel with the sensor unit, thereby forming a controllable bypass current path. [2] Current sensing system according to claim 1, wherein the switching unit is a controllable semiconductor element and wherein the bypass resistance is an internal resistance of the controllable semiconductor element. [3] Current sensing system according to claim 1 or 2, comprising logic configured to provide the control signal to the switching unit. [4] Current sensing system according to any of the preceding claims, comprising a conductor frame forming the sensing current path, wherein the conductor frame has a first and a second section, each section of the first and second section comprising a set of external connectors. [5] Current sensing system according to claim 4, wherein the conductor frame comprises a third section, wherein the third section comprises a bottleneck section and wherein the third section is arranged between the first section and the second section of the conductor frame. [6] Current sensing system according to claim 5, wherein the third section comprises a crest section configured to promote a higher current density during operation of the current sensing system than a current density in other sections of the sensing current path; and wherein the sensor unit is arranged adjacent to the crest section. [7] Current sensing system according to any one of claims 4 to 6, wherein the first section and / or the second section is configured to carry the controllable semiconductor element. [8] Current sensing system according to any one of claims 4 to 7, wherein the controllable semiconductor element is coupled between the first and the second section of the conductor frame, thereby forming the controllable bypass current path. [9] Current sensing system according to any one of claims 2 to 8, wherein the controllable semiconductor element is a transistor, preferably a MOSFET, a JFET, an IGBT, a GaN-HEMT or a bipolar transistor; and wherein the controllable semiconductor element comprises a first load electrode, a second load electrode and a control electrode, wherein the control signal is received by the logic via the control electrode. [10] Current sensing system according to claim 9, wherein the first load electrode is coupled to a first surface of the first section of the conductor frame and wherein the second load electrode is coupled to a first surface of the second section of the conductor frame by bond wires or a clip and wherein the control electrode is coupled to the logic. [11] Current sensing system according to any one of claims 3 to 10, wherein the logic is a gate driver logic configured to: receive a current value from the sensor unit and, upon reaching a predefined threshold of the current value, generate a gate signal for the controllable semiconductor element. [12] Current sensing system according to claim 11, wherein the controllable semiconductor element is switched to an on state upon receipt of the gate signal, thereby enabling a bypass current flow via the controllable bypass current path. [13] Current sensing system according to one of the preceding claims, comprising an encapsulation means which encapsulates at least a part of the first section, the second section and the third section of the conductor frame, the switching element and the sensor unit, wherein the encapsulation means forms a shaped housing of the current sensing system. [14] Current sensing system according to claim 13, wherein the current sensing system is a dual-in-line package (DIP). [15] Current sensing system according to any one of claims 10 to 14, wherein a second surface of the first section of the conductor frame and / or a second surface of the second section of the conductor frame, which is opposite the first surface, is configured to be thermally coupled to a heat sink. [16] Current sensing system according to any one of claims 13 to 15, wherein the shaped housing comprises a recess over the second surfaces of the first and second sections of the conductor frame, the recess exposing the second surfaces and forming an outermost surface of the shaped housing. [17] Current sensing system according to claim 16, wherein a thermal interface material, TIM, is arranged in contact with the second surface which is exposed in the recess, wherein the TIM fills the recess to form an outermost planar surface of the shaped housing. [18] Current sensing system according to one of claims 13 to 17, wherein the first and second sets of external connectors protrude from the housing body at a first section of a circumferential surface and wherein external measuring connectors connected to the sensor unit protrude from a second section of the circumferential surface opposite the first section of the circumferential surface. [19] Current sensing system according to any one of claims 3 to 18, wherein the sensor unit comprises the logic; or wherein the sensor unit comprises a housing and wherein the logic is an application-specific integrated circuit, ASIC, arranged within the housing of the sensor unit; or wherein the logic is contained in a logic unit. [20] Current sensing system according to any of the preceding claims, further comprising a heat sink; and / or a solid-state circuit breaker configured to interrupt a load current path upon receiving a second control signal from the logic; and / or the logic unit. [21] Current sensing system according to any of the preceding claims, wherein the sensor unit is configured to detect the current density by measuring a magnetic field; in particular, wherein the sensor unit comprises a Hall sensor, a GMR sensor, an AMR sensor or a TMR sensor. [22] Sensor device comprising: a sensor unit arranged in a sensing stream path, Logic configured to provide a control signal; a switching unit configured to receive the control signal and, in response to receiving the control signal, to switch a bypass resistor in parallel with the sensor unit, thereby forming a controllable bypass current path, an encapsulating agent that forms a shaped housing for the sensor device; a conductor frame comprising a first section, a second section, and a third section, the third section forming a bottleneck section of the detection current path; wherein the switching unit in an ON state has an internal resistance which forms the bypass resistance and is coupled between the first and second sections, thereby forming the controllable bypass current path, and wherein the sensor unit is located adjacent to the constriction section.

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