Device for semiconductor manufacturing, method for manufacturing a semiconductor device using this device and semiconductor device

Abstract

Semiconductor manufacturing apparatus in which a cavity (52) extending in a first direction (x) is formed by a forming tool (51) comprising a lower shape (53) and an upper shape (55), a conductor frame (45) provided with a semiconductor element (21) having a large chip support area (9) and a small chip support area (15) in which cavity (52) is arranged and a sealing material (33) is injected into the cavity (52) to seal the conductor frame (45) together with the semiconductor element (21), the semiconductor manufacturing apparatus comprising: a sealing material injection opening (59) through which the sealing material (33) is injected into the cavity (52); at least one sealing material reservoir (63) which is arranged in the first direction (x) at a distance from one side on which the sealing material injection opening (59) is located, on the other side of the intervening cavity (52), wherein the sealing material (33) flowing through the cavity (52) is received in the sealing material reservoir (63); and a sealing material reservoir opening (65) that connects the cavity (52) to the sealing material reservoir (63), wherein the sealing material injection opening (59) has a first opening cross-sectional area, the sealing material reservoir opening (65) has a second opening cross-sectional area, the second opening cross-sectional area is smaller than the first opening cross-sectional area, and the sealing material injection opening (59) is located in a position that is closer to the large chip support surface (9) than to the small chip support surface (15).

Description

Technical field

[0001] The present disclosure relates to a device for semiconductor manufacturing, a method for manufacturing a semiconductor device using this device, and a semiconductor device. State of the art

[0002] Power semiconductor devices are widely used in a wide variety of products, from industrial equipment to household appliances and information terminals. In particular, components for household appliances need to be miniaturized. Power semiconductor devices are designed for high voltages and high currents and therefore generate a significant amount of heat. To allow a given current to flow, this heat must be efficiently dissipated while maintaining electrical insulation.

[0003] In a power semiconductor device, a conductor frame, which has a die pad on which a power semiconductor element and the like are located, is sealed together with the power semiconductor element using a sealing material. Injection molding is used for this sealing process. During injection molding, a conductor frame is placed in a mold, and a sealing material is injected into the mold to seal the power semiconductor element and the like.

[0004] In a power semiconductor device, the heat generated by the power semiconductor element must be efficiently dissipated to the outside. The chip contact surface with the power semiconductor element is therefore arranged such that the thickness of the sealing material covering the side opposite the side with the power semiconductor element is less than the thickness of the sealing material covering the side with the power semiconductor element.

[0005] When a conductor frame is arranged in a forming tool, the distance (the height) of a lower region from the side opposite the side that has the power semiconductor element in the chip mounting surface to the lower form (the lower surface of the cavity) is shorter than the distance (the height) of an upper region from the side that has the power semiconductor element in the chip mounting surface to the upper form (the upper surface of the cavity). List of citations from patent literature Patent Document (PTD) 1: JP H05 - 326 594 A Patent Document (PTD) 2: JP H05 - 218 122 A Patent Document (PTD) 3: US 8,349,661 B2 Patent document (PTD) 4: DE 11 2017 007 135 T5 Patent Document (PTD) 5: JP 2013 - 207 083 A Patent Document (PTD) 6: JP 2007 - 42 709 A Patent Document (PTD) 7: JP 2010 - 263 066 A Patent Document (PTD) 8: JP 2019 - 9 184 A

[0006] Document PTD 2 discloses a sealing mold for sealing an element (e.g., a semiconductor element) mounted on a conductor frame with a resin.

[0007] Document PTD 3 discloses a semiconductor device comprising a semiconductor element and a chip mounting surface, which are sealed with a resin.

[0008] Document PTD 4 discloses a semiconductor device comprising a terminal frame, a semiconductor chip attached to an upper surface of the terminal frame, a first resin in contact with a lower surface of the terminal frame, and a second resin provided on top of the first resin. The first resin has a higher thermal conductivity than the second resin. The first resin and the second resin cover the semiconductor chip.

[0009] Documents PTD 5 to PTD 8 disclose further known devices and methods for sealing a semiconductor chip, as well as semiconductor chips manufactured using these devices and methods. Brief description of the invention; Technical problem statement

[0010] When a sealing material is injected into a mold, air bubbles are more likely to become trapped in the lower region, where the vertical spacing is relatively short compared to the upper region, where bubbles may remain trapped within the sealing material. If bubbles remain, the electrical insulation properties of the sealing material can deteriorate, and the reliability of the power semiconductor device may decrease. Measures have been implemented to counteract this (for example, PTD 1).

[0011] The present disclosure arose in light of these circumstances. One object of the present disclosure is to provide a semiconductor manufacturing apparatus in which residual bubbles in the sealing material are prevented. Another object is to provide a method for manufacturing a semiconductor device using such a semiconductor manufacturing apparatus. A further object is to provide a semiconductor device manufactured by such a manufacturing method. Solution to the problem

[0012] A semiconductor manufacturing device according to the present disclosure is a semiconductor manufacturing device with the combination of the features of claim 1.

[0013] A method for manufacturing a semiconductor device according to the present disclosure comprises the combination of the features of claim 10.

[0011] A semiconductor device according to the present disclosure comprises the combination of the features of claim 14. Preferred embodiments are found in the respective dependent claims. Advantageous effects of the invention

[0014] In the semiconductor manufacturing device according to the present disclosure, the mold tool has a sealing material injection opening, at least one sealing material reservoir, and a sealing material reservoir opening. This design prevents bubbles from remaining in the sealing material injected into the cavity.

[0015] In the method for manufacturing a semiconductor device according to the present disclosure, a molding tool with a sealing material injection opening, at least one sealing material reservoir and a sealing material reservoir opening is used to prevent bubbles from remaining in the sealing material.

[0016] In the semiconductor device according to the present disclosure, a semiconductor manufacturing device with the molding tool described above is used to prevent bubbles remaining in the sealing material and to improve electrical insulation. Brief description of the characters Fig. Figure 1 shows a first top view of an example of the appearance of a semiconductor device according to a first embodiment. Fig. 2 shows a top view of the internal structure of the in Fig. 1 Semiconductor component of this embodiment shown. Fig. Figure 3 shows a cross-sectional view along the in Fig. 1 line III-III of this embodiment. Fig. Figure 4 shows a cross-sectional view of a semiconductor device according to a first modification of this embodiment. Fig. Figure 5 shows a cross-sectional view of a semiconductor device according to a second modification of this embodiment. Fig. Figure 6 shows a second top view of the appearance of a semiconductor device of this embodiment. Fig. Figure 7 shows a cross-sectional view of a forming tool with a lower shape and an upper shape according to this embodiment. Fig. Figure 8 shows a top view of the internal structure of the lower form of this embodiment. Fig. Figure 9 shows an enlarged perspective partial cross-sectional view of the injection opening of a mold of this embodiment. Fig. Figure 10 shows a first enlarged perspective partial cross-sectional view of the resin reservoir opening of a molding tool of this embodiment. Fig. Figure 11 shows a second enlarged perspective partial cross-sectional view of the resin reservoir opening of a molding tool of this embodiment. Fig. Figure 12 shows an enlarged partial cross-sectional view of the resin reservoir opening of a molding tool of this embodiment. Fig. Figure 13 shows an enlarged partial top view of the resin reservoir opening of a molding tool of this embodiment. Fig. Figure 14 shows an enlarged partial cross-sectional view of the resin reservoir opening of a molding tool according to a modification of this embodiment. Fig. Figure 15 shows a top view illustrating a step of a process for manufacturing a semiconductor device according to this embodiment. Fig. Figure 16 shows a cross-sectional view illustrating a step that follows the one described in Fig. Step 15 shown is carried out according to this embodiment. Fig. Figure 17 shows a cross-sectional view illustrating a step that follows the one described in Fig. Step 16 shown is carried out according to this embodiment. Fig. Figure 18 shows a top view of an example of a vent arrangement according to this embodiment. Fig. Figure 19 shows a cross-sectional view illustrating a step that follows the one described in Fig. Step 17 shown is carried out according to this embodiment. Fig. Figure 20 shows a cross-sectional view depicting a step following the one described in Fig. Step 19 of this embodiment is carried out. Fig. 21 shows a top view in which Fig. 20. Step of this embodiment shown. Fig. 22 shows a cross-sectional view depicting a step that follows the one in Fig. 20 and Fig. Step 21, as shown in this embodiment, is carried out. Fig. Figure 23 shows a cross-sectional view depicting a step following the one described in Fig. Step 22, as shown in this embodiment, is carried out. Fig. Figure 24 shows a cross-sectional view illustrating one step of a process for manufacturing a semiconductor device according to a comparative example. Fig. Figure 25 shows a top view illustrating a step of a process for manufacturing a semiconductor device according to a modification of this embodiment. Fig. Figure 26 shows a top view of the structure of the lower form in a mold according to a first modification of this embodiment. Fig. Figure 27 shows a top view, in which a step of a process for manufacturing a semiconductor device using the in Fig. 26 shown in the mold according to this embodiment. Fig. Figure 28 shows a top view of the structure of the lower form in a mold according to a second modification of this embodiment. Fig. Figure 29 shows a top view, in which a step of a process for manufacturing a semiconductor device using the in Fig. 28 shown, forming tool according to this embodiment. Fig. Figure 30 shows a cross-sectional view illustrating a step of a method for manufacturing a semiconductor device using a forming tool according to a third modification of this embodiment. Fig. Figure 31 shows an enlarged partial cross-sectional view of the resin reservoir opening in a molding tool according to a fourth modification of this embodiment. Fig. Figure 32 shows a partial top view of an example of vent openings in a mold according to this embodiment. Fig. Figure 33 shows a partial cross-sectional view along the in Fig. 32 shown line XXXIII-XXXIII according to this embodiment. Fig. Figure 34 shows a top view of the structure of the lower form in a mold according to a second embodiment. Fig. Figure 35 shows a top view, in which a step of a process for manufacturing a semiconductor device using the in Fig. 34 shown, forming tool according to this embodiment. Fig. Figure 36 shows a top view of the appearance of a semiconductor device constructed using the [material / method] described in Fig. 34 was produced according to this embodiment. Fig. Figure 37 shows a top view of the structure of the lower form in a mold according to a third embodiment. Fig. Figure 38 shows an enlarged partial top view of the in Fig. 37 lower form shown according to this embodiment. Fig. Figure 39 shows a top view in which a step of a process for manufacturing a semiconductor device using the in Fig. 37 shown, forming tool according to this embodiment. Fig. Figure 40 shows an enlarged partial top view of the lower shape in a mold according to a first modification of this embodiment. Fig. Figure 41 shows an enlarged partial top view of the lower shape in a mold according to a second modification of this embodiment. Fig. Figure 42 shows an enlarged partial cross-sectional view of a forming tool according to a third modification of this embodiment. Fig. Figure 43 is an enlarged perspective partial view of a semiconductor device after removal from the Fig. 42 shown forming tool of this design. Fig. Figure 44 shows an enlarged partial cross-sectional view of a forming tool according to a fourth modification of this embodiment. Fig. Figure 45 shows a top view of another example of the appearance of a semiconductor device according to the embodiments. Fig. Figure 46 shows a top view of another example of the appearance of a semiconductor device according to the embodiments. Fig. Figure 47 shows an enlarged partial cross-sectional view of the resin reservoir opening of a molding tool according to a fourth embodiment. Fig. Figure 48 shows a first side view with a partial cross-section showing a state in which a semiconductor device formed with a forming tool according to this embodiment is mounted on an electronic circuit board. Fig. Figure 49 shows a second side view with a partial cross-section showing a state in which a semiconductor device formed with the forming tool according to this embodiment is mounted on an electronic circuit board. Fig. Figure 50 shows a top view of the structure of the lower form in a mold according to a fifth embodiment. Fig. Figure 51 shows a top view, in which a step of a process for manufacturing a semiconductor device using the in Fig. 50 shown, forming tool according to this embodiment. Description of embodiments: First embodiment

[0017] A semiconductor device and a semiconductor manufacturing device according to a first embodiment are described. (Semiconductor component)

[0018] First, a semiconductor device manufactured using a semiconductor fabrication system is described. As in Fig. 1, Fig. 2 and Fig. As shown in Figure 3, in a semiconductor device 1 that is a power semiconductor device, power semiconductor elements 21 and IC elements 29 are mounted as semiconductor elements on a conductor frame 45. The conductor frame 45, together with the power semiconductor elements 21 and the like, is sealed with a casting resin 33 as a sealing material.

[0019] The casting resin 33 has a first side region 33a, a second side region 33b, a third side region 33c, a fourth side region 33d, a first main surface 33e, and a second main surface 33f. The first side region 33a and the second side region 33b are spaced apart along the X-axis and each extends along the Y-axis. The third side region 33c and the fourth side region 33d are spaced apart along the Y-axis and each extends along the X-axis. The first main surface 33e and the second main surface 33f are spaced apart along the Z-axis.

[0020] On a surface of the casting resin 33, a resin residue 34 remains as a result of the injection of liquid resin, serving as casting resin 33, into a mold. The first side region 33a exhibits a resin injection residue 34a as the first sealing material residue. As will be described later, the resin injection residue 34a is a resin residue that remains at a position corresponding to a resin injection opening through which a casting resin (liquid resin) is injected.

[0021] The second side region 33b contains a resin reservoir residue 34b as a second sealing material residue. As will be described later, the resin reservoir residue 34b is a resin residue located at a position corresponding to a resin reservoir opening. Specifically, the resin reservoir residue 34b is located in the second side region at a position opposite the resin injection residue 34a in the X-axis direction. The area of ​​the resin reservoir residue 34b is smaller than the area of ​​the resin injection residue 34a.

[0022] Fig. Figure 1 shows a convex resin residue 34 protruding from a surface of the casting resin 33. Depending on how the casting resin 33 is released from the mold, the resin residue 34 can also be a concave resin residue 34, which is recessed from a surface of the casting resin 33. In this case, as shown in Fig. As shown in Figure 45, a concave resin injection residue 34a remains at the first side region 33a. A concave resin reservoir residue 34b remains at the second side region 33b. In addition, as shown in Fig. As shown in Figure 46, for example, a concave resin injection residue 34a may remain on the first side region 33a and a convex resin reservoir residue 34b on the second side region 33b. A convex resin injection residue 34a and a concave resin reservoir residue 34b may remain (not shown).

[0023] The conductor frame 45 comprises power supply conductor terminals 5, power supply conductors 3, conductor stage areas 7, a large chip support area 9, small chip support areas 15 (15a, 15b, 15c), IC conductors 23, and IC conductor terminals 25. The small chip support areas 15 comprise three small chip support areas 15a, 15b, and 15c. The large chip support area 9 and the like, on which the power semiconductor elements 21 are mounted, are arranged at a position that is lower in the Z-axis direction than the position (height) of the power supply conductors 3. The large chip support area 9 and the like are arranged on a side that is closer to the first main surface 33e of the casting resin 33 relative to the position of the power supply conductor 3 in the Z-axis direction.

[0024] The distance between the large chip support surface 9 and the first main surface 33e is defined as distance L1. The distance between the large chip support surface 9 and the second main surface 33f is defined as distance L2. Distance L1 is shorter than distance L2. Specifically, the thickness of the portion of the resin 33 covering the side (first surface) opposite the side on which the power semiconductor element 21 is mounted on the large chip support surface 9 is less than the thickness of the portion of the resin 33 covering the side (second surface) on which the power semiconductor element 21 is mounted on the large chip support surface 9. As described later, a mold has a resin reservoir opening and a resin reservoir to prevent bubbles in the portion of the resin 33 covering the first surface of the large chip support surface 9.

[0025] For example, three power semiconductor elements 21 are mounted on the large chip mounting area 9. Each of the three power semiconductor elements 21 is connected to the large chip mounting area 9 by a conductive adhesive 19. For example, one power semiconductor element 21 is mounted on each of the small chip mounting areas 15a, 15b, and 15c. A power semiconductor element 21 is mounted on each of the small chip mounting areas 15a, 15b, and 15c using a conductive adhesive (not shown).

[0026] The power semiconductor element 21 is, for example, an insulated-gate bipolar transistor (IGBT) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Solder paste or silver paste, for example, is used as the conductive adhesive 19.

[0027] The large chip mounting area 9 is connected to the power supply conductor 3 via the conductor stage area 7. Each of the chip mounting areas 15a, 15b and 15c has an angled area 13. The angled area 13 comprises a component in the X direction and a component in the Y direction and extends obliquely.

[0028] Preferably, the X-coordinate value of the distal end 17a of the small chip contact area 15a is greater than the X-coordinate value of the terminal end 11a of the conductor stage region 7. Preferably, the X-coordinate value of the distal end 17b of the small chip contact area 15b is greater than the X-coordinate value of the terminal end 11b of the conductor stage region 7. Preferably, the X-coordinate value of the distal end 17c of the small chip contact area 15c is greater than the X-coordinate value of the terminal end 11c of the conductor stage region 7.

[0029] Due to the angled area 13, even when the space to the side of the large chip mounting area 9 (negative X-axis direction) is relatively narrow, a power semiconductor element 21 can be mounted on each of the three small chip mounting areas 15a, 15b, and 15c, while three power semiconductor elements 21 are mounted on the large chip mounting area 9. This configuration allows the power semiconductor elements 21 to be arranged efficiently with a limited capacitance of the semiconductor device 1, thus contributing to a reduction in the size of the semiconductor device 1.

[0030] Each of the small chip mounting surfaces 15a, 15b, and 15c is connected to the power supply conductor 3 via the angled section 13 and the conductor step section 7 of the small chip mounting surface 15. The power supply conductor 3 is connected to the power supply conductor terminal 5. The power supply conductor terminal 5 protrudes outwards from the third side section 33c of the casting resin 33.

[0031] For example, two IC elements 29 are attached to the IC conductor 23. Each of the two IC elements 29 is connected to the IC conductor 23 by a conductive adhesive 27. The IC conductor 23 is connected to the IC conductor terminal 25. The IC conductor terminal 25 protrudes outwards from the fourth side region 33d of the casting resin 33.

[0032] The associated power semiconductor element 21 and the IC element 29 are electrically connected by wire 31. The respective power semiconductor element 21 and the power supply conductor 3 are electrically connected by wire 31. The respective IC element 29 and the IC conductor 23 are electrically connected by wire 31.

[0033] The wire 31 is made of a metal such as gold, silver, copper, or aluminum. In this way, an electrical circuit is formed on the conductor frame 45. The material or thickness of the wire 31 can be varied depending on the area to be connected. The area connected with the wire 31 can be treated, e.g., coated, to increase the adhesive strength of the wire 31.

[0034] In the semiconductor device 1 described above, the structure in which the power supply conductor connection 5 and the IC conductor connection 25 protrude from the casting resin 33 was illustrated using an example. As in Fig. As shown in Figure 4, the semiconductor device 1 can have a structure in which the power supply conductor connection 5 and the IC conductor connection 25 are exposed on a surface of the casting resin 33, so that they do not protrude from the casting resin 33. In this case, for connecting the wire 31, it is advantageous if the conductor stage area 7, which is connected to the large chip mounting area 9, comprises two stages, one a conductor stage area 7a and the other a conductor stage area 7b.

[0035] If a relatively low voltage is applied to the power supply conductor terminal 5 of a semiconductor device 1, as shown in Fig. As shown in Figure 5, the position of the power supply conductor terminal 5 in the vertical direction corresponds to the position of the large chip mounting area 9 in the vertical direction. For example, the voltage applied to the power supply conductor terminal 5 is relatively low if the voltage is 24 V. In this case, the step to form the conductor stage area 7 in the conductor frame is not required, which helps to reduce production costs.

[0036] As will be described later, a mold has several cavities into which casting resin is injected. In some molds, the cavities comprise, for example, a first cavity and a second cavity. The first and second cavities are connected by a sprue. The casting resin injected into the first cavity is injected through the sprue into the second cavity. Some of the casting resin injected into the second cavity flows through the resin reservoir opening into the resin reservoir.

[0037] Resin residue attributable to the resin injection port and resin residue attributable to the casting channel remain on a surface of the semiconductor device that was sealed with the casting resin injected into the first cavity. As in Fig. As shown in Figure 6, the resin injection residue 34a remains as resin residue 34, which is attributable to the resin injection opening. A casting channel residue 34c remains as resin residue 34, which is attributable to the casting channel. The area of ​​the resin injection residue 34a and the area of ​​the casting channel residue 34c are essentially the same.

[0038] Resin residue attributable to the casting channel and resin residue attributable to the resin reservoir opening remain on a surface of the semiconductor device that was sealed with the casting resin injected into the second cavity. As in Fig. As shown in Figure 1, the resin injection residue 34a remains as resin residue 34, which is associated with the casting channel residue. The resin reservoir residue 34b remains as resin residue 34, which is associated with the resin reservoir opening.

[0039] Since the casting resin is injected from the sprue into the second cavity, the sprue residue 34c can be considered resin injection residue 34a. The area of ​​the resin reservoir residue 34b is smaller than the area of ​​the sprue residue 34c (resin injection residue 34a). The mold tool used as a semiconductor manufacturing device will now be described. (Forming tool)

[0040] As in Fig. 7 and Fig. As shown in Figure 8, the mold 51 has a lower mold 53 and an upper mold 55. The mold 51 includes a cavity 52. ​​The cavity 52 extends in the X-axis direction. The cavity 52 includes, for example, a first cavity 52a and a second cavity 52b. As shown in Fig. 7 and Fig. As shown in Figure 9, the mold 51 has a resin injection opening 59 through which the resin is injected into the first cavity 52a. The mold 51 has a sprue 61 that connects the first cavity 52a with the second cavity 52b. The casting resin injected into the first cavity 52a is also injected into the second cavity 52b via the sprue 61.

[0041] As in Fig. 7 and Fig. As shown in Figure 10, the mold 51 has a resin reservoir 63 into which a portion of the liquid resin flows, serving as the casting resin and being injected into the second cavity 52b. The mold 51 has a resin reservoir opening 65 that connects the second cavity 52b to the resin reservoir 63. As shown in Fig. As shown in Figure 8, the resin reservoir 63 and the resin reservoir opening 65 are, for example, formed in the lower form 53.

[0042] The resin reservoir 63 is spaced along the X-axis from one side, where the resin injection opening 59 with the intervening cavity 52 is located, and on the other side. The resin reservoir opening 65 includes an inclined section 67 and a movable pin 69, which serves as a closure. The movable pin 69 is movable in the vertical direction (Z-axis direction).

[0043] As in Fig. 9 and Fig. As shown in Figure 10, the opening cross-sectional area (for example, width LY2 × height LZ2) is designed as the second opening cross-sectional area in a section in which the inclined area 67 of the resin reservoir opening 65 is located, and is smaller than the opening cross-sectional area (for example, width LY1 × height LZ1) of the resin injection opening 59 as the first opening cross-sectional area.

[0044] When the movable pin 69 is received in the lower mold 53, its distal end is in the same position as the surface of the lower mold 53. The movable pin 69 can move so that it protrudes vertically (in the Z-axis direction) from its position within the lower mold 53. It is necessary to prevent wear on the movable pin 69 as it moves in the Z-axis direction. The movable pin 69 must also function as a seal, blocking the flow of the casting resin. Therefore, the distal end of the movable pin 69, in its protruding position, is preferably located approximately 50 µm from a frame 37 (underside).

[0045] In Fig. Figure 10 shows the forming tool 51 such that a gap is formed between the lower form 53 (upper surface 53a) and the upper form (lower surface 55a), the gap corresponding to the thickness of the frame 37 in a state where the frame 37 of the ladder frame is held between the lower form 53 and the upper form 55. The forming tool 51 is not restricted in this way, wherein the forming tool 51, as in Fig. 11 shows, for example, that it may have an area where the lower shape 53 (upper surface 53a) and the upper shape 55 (lower surface 55a) meet.

[0046] The construction of the Harz reservoir opening 65 and similar structures will now be described in detail. As in Fig. 10 and Fig. As shown in Figure 12, the inclined section 67 is inclined such that it slopes down from an upper section 67a towards the resin reservoir 63. As a third opening cross-sectional area, the opening cross-sectional area (for example, LY3×LZ3) in the resin reservoir opening 65 immediately before the flow into the resin reservoir 63 is defined such that it is larger than the opening cross-sectional area (for example, LY2×LZ2) of the area in which the inclined section 67 is located within the resin reservoir opening 65. As will be described later, the inclined section 67 facilitates the release of the hardened casting resin from the lower mold 53.

[0047] Area 66a with the second opening cross-sectional area (LY2×LZ2) corresponds to a first section of the sealing material reservoir opening. Area 66b with the third opening cross-sectional area (LY3×LZ3) corresponds to a second section of the sealing material reservoir opening.

[0048] In the step of sealing with casting resin, the casting resin (liquid resin) attempting to flow into the resin reservoir 63 must not be allowed to enter the resin reservoir 63. To prevent wear or breakage of the movable pin 69, it is also necessary to reduce the distance by which the pin 69 causes the lower form 53 to be moved towards the upper form 55. Specifically, the height LZ2 is (see Fig. 10) of the area in which the inclined area 67 is located, preferably, for example, about 300 to 500 µm. The height LZ3 (see Fig. 10) of the area of ​​the resin reservoir opening 65 immediately before the flow of the casting resin into the resin reservoir 63 is preferably about twice the height LZ2, preferably for example about 600 to 1000 µm.

[0049] The sliding friction of the movable pin 69 against the lower form 53 during movement in the vertical direction should be reduced as much as possible. As in Fig. As shown in Figure 13, the cross-sectional shape (XY plane) of the movable pin 69 is therefore preferably, for example, circular or oval. The diameter D of the movable pin 69 is preferably smaller than the width W in the Y direction of the resin reservoir opening 65, for example by about 30 µm, so that only a minimal amount of casting resin flows when the movable pin 69 projects to a height immediately before contacting the frame.

[0050] The distance L18 from the upper region 67a of the inclined region 67 to the center of the movable pin 69 in the resin reservoir opening 65 is preferably as short as possible within a distance where the movable pin 69 does not overlap the inclined region 67. Compared to the pressure valve described in PTD 1, the movable pin 69 has a smaller diameter and a circular cross-section, which reduces sliding friction and the likelihood of breakage.

[0051] The width LY3 of the resin reservoir opening 65 (in the Y direction) is preferably as small as possible, preferably less than or equal to half the width LY1 of the resin injection opening 59 (see Fig. 9) and the width of the casting channel 61. The width LY3 of the resin injection opening 59 is preferably, for example, about 0.5 to 1.5 mm, since a certain cross-section must be maintained to release the casting resin flowing into the resin reservoir 63 from the lower mold 53. On the other hand, the width W of the resin reservoir opening 65 is preferably 500 µm or more, so that the casting resin flowing into the resin reservoir 63 does not remain in the lower mold 53.

[0052] In comparison to a setup according to a reference example where the width of the resin reservoir opening is equal to the width of the semiconductor device, the flow of casting resin into the resin reservoir 63 is prevented, and the cavity 52 can be reliably filled with the casting resin, while the amount of casting resin flowing into the resin reservoir 63 is minimized. The capacity of the resin reservoir 63 is adjusted by the lengths L11 (in the X-axis direction), L10 (in the Y-axis direction), and L12 (in the Z-axis direction).

[0053] In the mold 51 described above, the resin reservoir opening 65 and the resin reservoir 63 are formed in the lower mold 53. As in Fig. As shown in Figure 14, the resin reservoir opening 65 and the resin reservoir 63 can be formed in the upper form 55 of the mold 51. In this case, the movable pin 69 projects from a position in which it is received in the upper form 55 to a position immediately before contact with the frame. (Method for manufacturing a semiconductor device)

[0054] The following describes a method for manufacturing a semiconductor device using the forming tool described above. First, the conductor frame 45 (see Fig. 15) formed by etching or punching a metal plate. The large chip support area 9, the small chip support areas 15, the IC conductors 23, etc., are formed in the conductor frame 45. Next, a bending tool is used to bend the conductor frame 50 and form the conductor stage area 7 (see Fig. 15).

[0055] A power semiconductor element 21 is connected to each of the large chip contact area 9 and the small chip contact areas 15 using a conductive adhesive (see Fig. 15). The IC elements 29 are connected to the IC conductor 23 using conductive adhesive (see Fig. 15). Then the wires 31 are connected. In this way, as in Fig. As shown in Figure 15, several semiconductor devices are formed, comprising a conductor frame 45 with power semiconductors 21 and the like mounted on it, before being sealed with casting resin. One semiconductor device (on the left side of the conductor frame 45) and the other semiconductor device (on the right side of the conductor frame 45), which are arranged in the X-axis direction, are connected by a bridge 35.

[0056] Next, the semiconductor components are sealed with casting resin using injection molding. As in Fig. As shown in Figure 16, the forming tool 51 is manufactured, which comprises the lower mold 53 and the upper mold 55. The ladder frame 45 (see Fig. 15) with the power semiconductor elements 21 and the like mounted thereon, is arranged between the lower form 53 and the upper form 55. Preferably, the resin injection opening 59 is arranged on the side that is closer to the large chip contact area 9 of the conductor frame 45 than to the small chip contact area 15.

[0057] The area of ​​the large chip support surface 9 is larger than the area of ​​the small chip support surface 15. For this reason, the area between the large chip support surface 9 and the lower mold 53 (bottom surface of the cavity 52) is sometimes less filled with casting resin. Therefore, the resin injection port 59 is positioned closer to the large chip support surface 9 to ensure that the area between the large chip support surface 9 and the lower mold 53 (bottom surface of the cavity 52) is filled with liquid resin, which serves as a low-viscosity casting resin.

[0058] To effectively fill the area with casting resin (liquid resin), the position of the resin injection opening 59 (in the Y-axis direction) and the position of the casting channel 61 (in the Y-axis direction) are located as close as possible to the central position of the large chip support surface 9 (in the Y-axis direction). The position of the resin injection opening 59 (in the Y-axis direction) and the position of the casting channel 61 (in the Y-axis direction) are almost identical.

[0059] The resin reservoir 63 and the second cavity 52b are connected by the resin reservoir opening 65. At this point, the movable pin 69 is in the upper position, and the resin reservoir opening 65 is closed.

[0060] Next, a punch 57 is loaded with a resin tablet 81. After locking the lower mold 53 and the upper mold 55, the punch 57 is raised while the resin tablet 81 melts, injecting the molten liquid resin, which serves as the casting resin, from the resin injection port 59 into the cavity 52 (52a). The injected liquid resin fills the first cavity 52a and then reaches the casting channel 61.

[0061] As in Fig. As shown in Figure 17, the liquid resin that reaches the casting channel 61 flows through the casting channel 61 and is injected into the second cavity 52b. The distance from the large chip support surface 9 and the small chip support surfaces 15 to the upper shape 55 (the upper surface of the second cavity 52b) is greater than the distance from the large chip support surface 9 and the small chip support surfaces 15 to the lower shape 53 (the lower surface of the second cavity 52b).

[0062] Liquid resin 83 therefore flows more readily to a region RC1 of the cavity 52 above the large chip contact area 9 and the small chip contact areas 15 than to a region RC2 of the cavity 52 below the large chip contact area 9 and the small chip contact areas 15. Accordingly, the liquid resin 83 flowing through region RC1 eventually flows from region RC1 into region RC2 and ultimately merges with the liquid resin 83 flowing through region RC2 at a position 87 (zone 85) below the small chip contact areas 15 (15C).

[0063] As the cavity 52 gradually fills with liquid resin 83, the air in the cavity 52 is discharged through the vent openings 79 provided in the cavity 52. ​​As shown in Fig. As shown in Figure 18, the vent openings 79 are arranged around the circumference of the cavity 52. ​​The vent openings 79 are formed, for example, by depressions with a depth of approximately 100 µm in the upper shape 55 or in the lower shape 53. The vent openings 79 will be described in more detail later.

[0064] As in Fig. As shown in Figure 19, when the liquid resin 83 flowing through area RC1 and the liquid resin 83 flowing through area RC2 merge in zone 85 below the small chip support area 15 (15C), air can become trapped in the liquid resin 83. The movable pin 69 is located at the top and the resin reservoir opening 65 is closed until the liquid resins 83 merge in zone 85 (position 87). If the trapped air does not collapse, it can remain in the liquid resin 83 (casting resin) in the form of bubbles.

[0065] Then a procedure (one step) is performed that prevents bubbles from remaining in the liquid resin 83. As in Fig. 20 and Fig. As shown in Figure 21, the movable pin 69 lowers to open the resin reservoir opening 65. With the resin reservoir opening 65 open, the liquid resin 83 in the second cavity 52b attempts to flow through the resin reservoir opening 65 into the resin reservoir 63. Fig. In Figure 21, part of the frame 37 is represented by a dashed line to show the structure of the lower form 53. In the following figures, part of the frame 37 is represented by a dashed line where necessary.

[0066] At this point, a portion of the liquid resin 83 located in zone 85 below the small chip support surface 15 (15C) also flows towards the resin reservoir opening 65. Therefore, even if bubbles remain in a portion of the liquid resin 83 in zone 85, the bubbles are removed from area RC2. This ensures electrical insulation on the side of the first main surface 33e in the resin 33 (see Fig. 3 and similar).

[0067] Next, a procedure (one step) is performed to remove the mold tool 51. As in Fig. As shown in Figure 22, the plunger 57 is pressed upwards (see arrow). The casting resin 33, which seals the power semiconductor elements 21 and the like, is thus separated from the lower mold 53. The casting resin 99, which has flowed into the resin reservoir 63 and hardened, cannot be detached from the lower mold 53.

[0068] The movable pin 69 is also pushed upwards together with the plunger 57 (see arrow). Pushing the movable pin 69 upwards ensures that the casting resin 99 is removed from the lower mold 53. Next, as described in Fig. As shown in Figure 23, the casting resin 99 removed from the lower mold 53 is removed from the frame 37 by a punch (not shown). Additionally, a portion of the casting resin located at the sprue and a portion of the casting resin located at the resin injection opening are separated by a punch (not shown). In this way, a semiconductor device 1 sealed with casting resin 33 is produced, which is Fig. 1, Fig. 2 to Fig. 3 is shown.

[0069] In the semiconductor device 1 described above, the electrical insulation on the first main surface 33e can be in the casting resin 33 (see Fig. 3 et al.) are ensured. This is explained in comparison with a method for manufacturing a semiconductor device according to a comparative example.

[0070] As in Fig. As shown in Figure 24, in the method for manufacturing a semiconductor device according to the comparative example, the vent opening 79 is located in an area opposite the casting channel 61, with the second cavity 52b in the mold 51 situated between them. The vent opening 79 is one of several vent openings arranged around the circumference of the cavity 52. ​​Elements corresponding to the elements of the cavity 52 according to the embodiment are designated with the same reference numerals and are not further explained unless necessary.

[0071] Liquid resin 83, injected from resin injection port 59 into the first cavity 52a, is injected through the sprue 61 into the second cavity 52b. In the second cavity 52b, the liquid resin 83 flowing through area RC1 and the liquid resin 83 flowing through area RC2 merge in zone 85 (position 87) below the small chip support area 15 (15C). Air may become trapped in the liquid resin 83 during this process. The mold 51 has several vents, including vent 79, through which air in the liquid resin 83 is vented.

[0072] However, the air trapped in the liquid resin 83 is vented to a lesser extent in zone 85, where the liquid resins 83 merge. Particularly when a large volume of air is trapped, the trapped air is not vented from the vent openings and sometimes remains in the liquid resin 83 in the form of bubbles. Therefore, bubbles remaining in the finished semiconductor device can impair the electrical insulation at the first main surface 33e of the casting resin 33 (see Fig. 3 and similar).

[0073] In contrast to the method for manufacturing a semiconductor device according to the comparative example, in the method for manufacturing a semiconductor device according to the first embodiment, after the liquid resin 83 flowing through region RC1 and the liquid resin 83 flowing through region RC2 merge, the liquid resin 83 attempts to flow through the resin reservoir opening 65 into the resin reservoir 63 in zone 85 (position 87). Thus, even if bubbles remain in a portion of the liquid resin 83 located in zone 85, the bubbles from region RC2 are removed. Consequently, the electrical insulation on the first main surface 33e in the casting resin 33 (see Fig. 3 et al.) are guaranteed.

[0074] In the finished semiconductor device, the parts of the casting resin located at the resin injection opening 59, the casting channel 61 and the resin reservoir opening 65 (see Fig. 7 et al.) are located, separated as described at the beginning, so that the resin residue 34 (see Fig. 1 and Fig. 6), which has a rougher surface than the other parts, remains on the surface of the casting resin 33 of the semiconductor device 1.

[0075] Specifically, the semiconductor component sealed in the second cavity 52b (see Fig. 1) The sprue residue 34c is found at the first side region 33a and the resin reservoir residue 34b at the second side region 33b. Since the cross-sectional area of ​​the sprue corresponds to the cross-sectional area of ​​the resin injection opening and liquid resin is injected from the sprue, the sprue residue 34c can be considered resin injection residue 34a.

[0076] In contrast, the semiconductor device sealed in the first cavity 52a (see Fig. 6) The resin injection residue 34a is found on the first side region 33a and the casting channel residue 34c on the second side region 33b. The area of ​​the resin injection residue 34a and the area of ​​the resin reservoir residue 34b are essentially identical.

[0077] In the above-described process for manufacturing a semiconductor device, the following occurs in the Fig. In step 23, the casting resin 99 removed from the lower form 53 is removed from the frame and from the casting resin 33 of the semiconductor device by a punch. As shown in Fig. As shown in Figure 25, a recess 39 can be arranged in the frame 37 to effectively separate the casting resin 99 from the casting resin 33.

[0078] The recess 39 is shaped such that the resin reservoir 63 is exposed when the ladder frame 45 is positioned in the mold 51 (lower mold 53). This allows the resin 99 to be separated from the resin 33 by a punch, enabling the punch to be brought into direct contact with the resin 99 for effective removal.

[0079] When a ladder frame 45 with such a recess 39 is used, the distal end of the movable pin 69 preferably protrudes to a position of about 50 µm from the lower surface of the upper form 55 when the resin reservoir opening 65 is closed.

[0080] In the above-described method for manufacturing a semiconductor device, the resin reservoir opening 65 is located at a position closest to the resin injection opening 59. Specifically, a mold 51 was described in which the position of the resin reservoir opening 65 (in the Y-axis direction) and the position of the casting channel 61 (resin injection opening 59) (in the Y-axis direction) are the same. The resin reservoir opening 65 can also be located at a position (in the Y-axis direction) that is spaced apart from the position of the casting channel 61 (resin injection opening 59) (in the Y-axis direction).

[0081] As in Fig. As shown in Figure 26, a mold 51 (lower mold 53) can be used in which the resin reservoir opening 65 is, for example, located at a position (in the Y-axis direction) that is spaced apart from the position of the sprue 61 (in the Y-axis direction) in the positive Y-axis direction. In this case, it takes longer for the liquid resin 83 injected from the sprue 61 to reach the resin reservoir opening 65.

[0082] Therefore, in the Fig. 27 shown step of injecting liquid resin 83 into the cavity 52, even if bubbles in a part of the liquid resin 83 in zone 85 (see Fig. 18 et al.) remain, the bubbles from zone 85 (area RC2) are removed before the liquid resin 83 reaches the resin reservoir opening 65 and attempts to flow into the resin reservoir 63. This allows the electrical insulation at the first main surface 33e in the casting resin 33 (see Fig. 3 et al.) are guaranteed.

[0083] Furthermore, the capacity of resin reservoir 63 is preferably as large as possible to ensure that zone 85 (see Fig. 18 et al.) is filled with liquid resin 83. To increase the capacity of the resin reservoir 63, it is, for example, as in Fig. 28 advantageously shows that the length L10 in the Y-axis direction is chosen to be large, while the length L11 in the X-axis direction of the resin reservoir 63 is maintained.

[0084] Thus, in the Fig. 29 shown step of injecting liquid resin 83 into the cavity 52, even if bubbles in a part of the liquid resin 83 in zone 85 (see Fig. 18 et al.) remain, the bubbles are reliably removed from zone 85 (area RC2), while the liquid resin 83 flows into the resin reservoir 63. As a result, the electrical insulation at the first main surface 33e in the casting resin 33 (see Fig. 3 and similar) are reliably guaranteed.

[0085] When liquid resin (casting resin) is filled, for example, into several cavities (not shown) that are also arranged in the Y-axis direction, the length of the resin reservoir in the Y-axis direction is preferably set to a length that does not exceed the length of the cavities arranged in the Y-axis direction, and the length in the X-axis direction is set to be long. It is assumed that such a mold 51 is used and the ladder frame 45 (see Fig. 25) including the frame 37 with the recess 39. In this case, the length of the resin reservoir 63 in the X-axis direction preferably does not exceed the width (length in the X-axis direction) of the frame.

[0086] On the other hand, the length L11 of the resin reservoir 63 in the X-axis direction can exceed the width of the frame 37. In this case, as in Fig. As shown in Figure 30, it is advantageous to provide a mechanism which presses down from above onto the casting resin 99 which has flowed into the resin reservoir and hardened, and separates the casting resin 99 from the casting resin 33.

[0087] The length L12 (see Fig. 12) in the depth direction of the resin reservoir 63 is preferably as long as possible. In order to remove the casting resin 99 that has flowed into the resin reservoir 63 and hardened from the lower mold recess, the bottom of the resin reservoir 63 is preferably located at a position (height) that corresponds to or is higher than the bottom surface of the cavity 52.

[0088] Furthermore, as can be seen, for example, in Fig. As shown in Figure 31, a resin reservoir 63 with a zone for receiving liquid resin is also arranged on the upper form 55 of the mold tool 51. In order to easily remove the casting resin 99 that has flowed into the resin reservoir 63 and hardened from the upper form 55, the upper surface of the resin reservoir 63 is preferably located at a position (height) that does not exceed the upper surface of the cavity 52.

[0089] With such a mold 51, a sufficient capacity of the resin reservoir 63 can be ensured, even if bubbles remain in a part of the liquid resin 83 located in zone 85 (see Fig. 18 et al.), the bubbles can be reliably removed from zone 85, while the liquid resin 83 attempts to flow into the resin reservoir 63.

[0090] In the process for manufacturing a semiconductor device, as already explained, since the liquid resin 83 wants to flow through the resin reservoir opening 65 into the resin reservoir 63, bubbles are removed from the RC2 area, even if bubbles remain in a portion of the liquid resin 83 located in zone 85. As a result, the electrical insulation on the first main surface 33e of the casting resin 33 (see Fig. 3 et al.) are ensured.

[0091] It is assumed here that the thickness of the casting resin is 33, which corresponds to the distance L1 (see Fig. 3) from the large chip contact area 9 to the first main surface 33e, is approximately 500 µm. It is assumed that the thickness of the casting resin 33 of the semiconductor device 1 in the Z-axis direction is approximately 3.5 mm.

[0092] In the manufacture of such a semiconductor device, the volume of the resin reservoir 63 should be approximately one third of the volume of the casting resin 33 of the semiconductor device 1 in order to remove bubbles from the RC2 area if bubbles remain in a part of the liquid resin 83 in zone 85.

[0093] In the above-described method for manufacturing a semiconductor device, the mold 51 has a resin reservoir opening 65. The cross-sectional area of ​​the resin reservoir opening 65 is smaller than the cross-sectional area of ​​the resin injection opening 59. Furthermore, the resin reservoir opening 65 includes a movable pin 69 to regulate the flow of liquid resin into the resin reservoir 63.

[0094] This design minimizes the amount of liquid resin 83 flowing into the resin reservoir 63 and allows any bubbles remaining in the liquid resin 83 to be drained away. This ensures the electrical insulation of the casting resin 33 while reducing the amount of discarded casting resin 99 (liquid resin 83) to a minimum. The movable pin 69 serves only to reliably release the casting resin 99 from the lower mold 53.

[0095] In the above-described method for manufacturing a semiconductor device, liquid resin 83, which is injected through the resin injection port 59 into the first cavity 52a, flows through the casting channel 61 and is injected into the second cavity 52b. To ensure that the flow rate of the liquid resin 83 in the first cavity 52a is substantially equal to the flow rate of the liquid resin 83 in the second cavity 52b, the cross-sectional shape of the resin injection port 59 and the cross-sectional shape of the casting channel 61 are preferably identical. On the other hand, it is advantageous for the cross-sectional shape of the resin reservoir opening 65 to be smaller than the cross-sectional shape of the resin injection port 59 (casting channel 61).

[0096] In this setup, as already explained, the area of ​​the resin injection residue 34a, which remains on a surface of the semiconductor device 1 that was sealed in the first cavity 52a, and the area of ​​the casting channel residue 34c are essentially equal (see Fig. 6) The area of ​​the resin reservoir residue 34b left on a surface of the semiconductor device 1 sealed in the second cavity 52b is smaller than the area of ​​the casting channel residue 34c (resin injection residue 34a) (see Fig. 1) Therefore, the resin residue 34, which includes the resin reservoir residue 34b, is located on the surface of the semiconductor device 1 and can be easily identified by the appearance (casting resin 33) of the semiconductor device 1. (Ventilation opening in the mold)

[0097] As described above, the air in the cavity 52 is gradually discharged through the vent openings 79 in the mold tool 51, while the cavity 52 is gradually filled with liquid resin 83 (see Fig. 18).

[0098] As an example of ventilation openings 79, show Fig. 32 and Fig. 33 vent openings 79 are located in the mold 51 near the resin reservoir 63. The upper mold 55 has a vent opening 79a. The lower mold 53 includes a vent opening 79b. The vent opening 79b is connected to the resin reservoir 63.

[0099] To effectively vent the air from the cavity 52, the gap serving as the vent 79 must be large. However, if, for example, the height LZ4 of the gap serving as the vent 79a in the upper mold 55 is increased, there is a high probability that excessive amounts of liquid resin will leak out. Therefore, the vent 79b in the lower mold 53 is positioned opposite the vent 79a in the vertical direction (Z-axis), thus ensuring the required height of the gap serving as the vent 79.

[0100] Furthermore, the presence of the resin reservoir 63 accelerates the curing of the liquid resin flowing into the resin reservoir 63 and prevents the liquid resin from escaping through the vent opening 79b connected to the resin reservoir 63. This allows the height LZ5 of the gap serving as the vent opening 79b to be increased compared to the case where no resin reservoir 63 is present. Consequently, the air in the cavity 52 can be more efficiently vented from the mold 51 to the outside.

[0101] In order to provide a zone (area) in which the ladder frame 45 is enclosed between the upper shape 55 and the lower shape 53, the vent opening 79a and the vent opening 79b are preferably arranged in positions opposite each other in the vertical direction.

[0102] The width LY1 of vent 79a and the width LY2 of vent 79b can be the same or different. The midpoints of vent 79a and vent 79b in the lateral direction (in the Y-axis direction) can be the same or offset from each other. Second embodiment

[0103] A semiconductor manufacturing device according to a second embodiment is described. This embodiment uses a mold with multiple resin reservoirs for a cavity. (Forming tool)

[0104] A forming tool used as a semiconductor manufacturing device will now be described. As in Fig. As shown in Figure 34, the mold 51 (lower mold 53) has, for example, a resin reservoir 63a and a resin reservoir 63b as resin reservoir 63. The resin reservoir opening 65a is designed to establish a connection between the second cavity 52b and the resin reservoir 63a. The resin reservoir opening 65b is designed to establish a connection between the second cavity 52b and the resin reservoir 63b.

[0105] The resin reservoir opening 65a is arranged in a position (in the Y-axis direction) that is positively Y-oriented away from the position of the casting channel 61 (in the Y-axis direction). The resin reservoir opening 65b is arranged in a position (in the Y-axis direction) that is negatively Y-oriented away from the position of the casting channel 61 (in the Y-axis direction). The further assembly is similar to that described in Fig. 7 and Fig. Figure 8 shows the structure of the mold tool 51, wherein identical elements are designated with the same reference numeral and are not further detailed unless necessary. (Method for manufacturing a semiconductor device)

[0106] The following describes a method for manufacturing a semiconductor device using the forming tool described above.

[0107] First, several semiconductor devices are formed with a conductor frame on which power semiconductor elements and the like are mounted, before being sealed with casting resin in the same way as in the semiconductor device manufacturing process described above. The semiconductor devices are then sealed with casting resin by injection molding. As in Fig. As shown in Figure 35, the conductor frame 45 with the power semiconductor elements 21 and the like mounted on it is arranged in the mold 51.

[0108] After the lower mold 53 and the upper mold (not shown) have been locked in place, liquid resin 83 is injected through the resin injection opening 59 into the cavity 52 (52a). The liquid resin 83 injected into the first cavity 52a flows through the casting channel 61 and is injected into the second cavity 52b, so that the second cavity 52b gradually fills.

[0109] Meanwhile, as already explained, the liquid resin 83 flowing through area RC1 eventually flows from area RC1 into area RC2 and finally merges with the liquid resin 83 flowing through area RC2 in zone 85 (position 87) below the small chip contact area 15 (15C) (see Fig. 17 and Fig. 19).

[0110] If liquid resin 83 flowing through area RC1 and liquid resin 83 flowing through area RC2 merge in zone 85, air may become trapped in the liquid resin 83 and remain as bubbles in the liquid resin 83 (casting resin) if the trapped air does not collapse.

[0111] Next, the resin reservoir opening 65 (65a, 65b) is opened in the same way as in the step of Fig. 20. With the resin reservoir opening 65 (65a, 65b) open, the liquid resin 83 contained in the second cavity 52b attempts to flow through the resin reservoir opening 65a into the resin reservoir 63a or through the resin reservoir opening 65b into the resin reservoir 63b.

[0112] In this process, some of the liquid resin 83 located in zone 85 also flows towards the resin reservoir opening 65. Therefore, even if bubbles remain in some of the liquid resin 83 in zone 85, these will be removed from zone 85.

[0113] The forming tool is then used in the same way as in Fig. 22 and Fig. 23 shown, removing the semiconductor device formed by casting resin. As in Fig. As shown in Figure 36, the finished semiconductor device 1 specifically contains two resin reservoir residues 34b on the second side area 33b.

[0114] In the above-described method for manufacturing a semiconductor device, each resin reservoir opening 65 (65a, 65b) is arranged in a position (in the Y-axis direction) that is spaced (positively or negatively) from the position of the casting channel 61 (in the Y-axis direction). The time required for the liquid resin 83 injected from the casting channel 61 to reach the resin reservoir opening 65 is therefore longer than in the method described in Fig. 26 shown forming tool 51.

[0115] Even if bubbles remain in a portion of the liquid resin 83 located in zone 85, these are removed from zone 85 (position 87) when the liquid resin 83 reaches the resin reservoir opening 65 and attempts to flow into the resin reservoir. As a result, the electrical insulation at the first main surface 33e in the casting resin 33 (see Fig. 3 and similar) will be reliably ensured.

[0116] With the mold 51 described above, a sufficient volume of the resin reservoir 63 can be ensured. When manufacturing a semiconductor device, the conductor frame may have a positioning hole for the mold. In such a case, the length of the resin reservoir in the Y-direction is limited, and the capacity of the resin reservoir may be insufficient.

[0117] With the mold described above, sufficient resin reservoir capacity 65 can be ensured by using two resin reservoirs 65a and 65b, thus bypassing a positioning hole (not shown) in the frame. Since sufficient resin reservoir capacity 65 is guaranteed, bubbles are reliably eliminated, even if bubbles remain in zone 85 (see Fig. 19 et al.).

[0118] Furthermore, in the mold 51 described above, wear on the punch used to remove a portion of the casting resin that has flowed into and cured in the resin reservoir 65 can be prevented. The mold 51 has two resin reservoirs, 65a and 65b, as the resin reservoir 65. This design reduces the cross-sectional area of ​​the punch through which a portion of the casting resin that has flowed into and cured in each of the resin reservoirs 65a and 65b is removed. Therefore, compared to a punch with a large cross-sectional area, wear on the punch can be prevented more effectively, contributing to a reduction in production costs. Third embodiment

[0119] A semiconductor manufacturing device according to a third embodiment is described. (Forming tool)

[0120] As in Fig. As shown in Figure 37, the mold 51 (lower mold 53), which serves as a semiconductor manufacturing device, has, for example, a resin reservoir 63a and a resin reservoir 63b as resin reservoirs 63. The resin reservoir opening 65a is designed such that a connection is created between the second cavity 52b and the resin reservoir 63a. The resin reservoir opening 65b is designed such that a connection is created between the second cavity 52b and the resin reservoir 63b. Neither the resin reservoir opening 65a nor the resin reservoir opening 65b contains a movable pin that serves as a closure.

[0121] As in Fig. As shown in Figure 38, the lower form 53 includes a projection 93a extending towards the resin reservoir 63a and a projection 93b extending towards the resin reservoir 63b. When a portion of the casting resin that has flowed into the resin reservoir 63 and hardened is removed by a punch, the frame 37 is supported from below by a portion of the lower form 53, which has the projections 93a and 93b.

[0122] In the resin reservoir 63a, the length of the region of the resin reservoir 63a in the Y-axis direction, in which the projection 93a is located in the X-axis direction, is defined as length L16a. The length of the region of the resin reservoir 63a in the Y-axis direction, in which the projection 93a is not located in the X-axis direction, is defined as length L15a. Length L16a is preferably shorter than length L15a.

[0123] In the resin reservoir 63b, the length of the region of the resin reservoir 63b in the Y-axis direction, in which the projection 93b is located in the X-axis direction, is defined as length L16b. The length of the region of the resin reservoir 63b in the Y-axis direction, in which the projection 93b is not located in the X-axis direction, is defined as length L15b. Length L16b is preferably shorter than length L15b.

[0124] Lengths L15a and L15b can be different or the same length. Lengths L16a and L16b can be different or the same length.

[0125] In resin reservoir 63a, the length of the area of ​​resin reservoir 63a in the X-axis direction, where the projection 93a is not located in the Y-axis direction, is defined as length L14a. In resin reservoir 63b, the length of the area of ​​resin reservoir 63b in the X-axis direction, where the projection 93b is not located in the Y-axis direction, is defined as length L14b. Preferably, lengths L14a and L14b are set to a length approximately half the width of frame 37. This design ensures that the frame 37 is held in place when a portion of the cast resin that has flowed into and hardened in resin reservoir 63 is removed by a punch.

[0126] As in Fig. As shown in Figure 37, the resin reservoir opening 65a is arranged in a position (in the Y-axis direction) that is spaced apart from the position of the casting channel 61 (in the Y-axis direction) in the positive Y-axis direction. The resin reservoir opening 65b is arranged in a position (in the Y-axis direction) that is spaced apart from the position of the casting channel 61 (in the Y-axis direction) in the negative Y-axis direction. Each of the resin reservoir openings 65a and 65b is preferably arranged in a position that is as far as possible from zone 85 (position 87) below the small chip support area 15 (15C) (see Figure 37). Fig. 19 et al.) is removed, into which the liquid resin is last poured when the conductor frame is arranged in the molding tool 51.

[0127] Preferably, the resin reservoir opening 65a is arranged in a position approximately 0.5 to 2.0 mm away in the negative Y-axis direction from a region extending in the X-axis direction (the upper region in the figure) in the second cavity 52b. Preferably, the resin reservoir opening 65b is arranged in a position approximately 0.5 to 2.0 mm away in the positive Y-axis direction from a region extending in the X-axis direction (the lower region in the figure) in the second cavity 52b. This design prevents chipping of the casting resin of the semiconductor device when a portion of the casting resin that has flowed into the resin reservoir 63 and cured is removed by a punch.

[0128] The length of the resin reservoir opening 65a in the Y-axis direction is defined as width Wa. The length of the resin reservoir opening 65b in the Y-axis direction is defined as width Wb. The width Wa and the width Wb are preferably as small as possible. The width Wa and the width Wb are preferably less than or equal to approximately half the width LY1 (see Fig. 9) the resin injection opening 59 and the width of the casting channel 61. The width Wa and the width Wb are preferably, for example, about 0.5 to 1.5 mm, so that the part of the casting resin that has flowed into the resin reservoir 63 and hardened can be easily removed from the lower mold 53.

[0129] The length (height) of the resin reservoir openings 65a and 65b in the Z-direction is preferably as small as possible. The length in the Z-direction is preferably, for example, about 0.2 to 0.6 mm, so that the portion of the casting resin that has flowed into the resin reservoir 63 and hardened can be easily removed from the lower mold 53. The length of each of the resin reservoir openings 65a and 65b in the X-axis direction is defined as length L17. The length L17 is suitably determined taking into account the cross-sectional area of ​​the opening of the resin reservoir 65 and the like. (Method for manufacturing a semiconductor device)

[0130] A method for manufacturing a semiconductor device using the mold described above is now described. First, several semiconductor devices, comprising a conductor frame with power semiconductor elements and the like mounted on it, are formed before being sealed with casting resin in the same manner as in the semiconductor device manufacturing method described above.

[0131] Next, the semiconductor components are sealed with casting resin using injection molding. As in Fig. As shown in Figure 39, the conductor frame 45 with the power semiconductor elements 21 and the like mounted on it is arranged in the mold 51. Here, the frame 37 of the conductor frame 45 has recesses 41a and 41b. The recess 41a is shaped such that it exposes the resin reservoir 39a. The recess 41b is shaped such that it exposes the resin reservoir 39b.

[0132] The conductor frame 45 has a conductor holder 43 that connects the IC conductor 23 to the frame 37 to prevent the IC conductor 23 from being moved vertically (in the Z-axis direction) in the cavity 52 when liquid resin is injected.

[0133] After locking the lower mold 53 and the upper mold (not shown), liquid resin 83 is injected from the resin injection opening 59 into the cavity 52 (52a). The liquid resin 83 injected into the first cavity 52a flows through the casting channel 61 and is injected into the second cavity 52b, so that the second cavity 52b is gradually filled.

[0134] Meanwhile, as already explained, the liquid resin 83 flowing through area RC1 eventually flows from area RC1 into area RC2 and finally merges with the liquid resin 83 flowing through area RC2 in zone 85 (position 87) below the small chip contact area 15 (15C) (see Fig. 17 and Fig. 19).

[0135] If the liquid resin 83 flowing through area RC1 and the liquid resin 83 flowing through area RC2 merge in zone 85, air may become trapped in the liquid resin 83 and may remain as bubbles in the liquid resin 83 (casting resin) if the trapped air does not collapse.

[0136] Then liquid resin 83 is injected from the casting channel 61, so that liquid resin 83 in the second cavity 52b attempts to flow through the resin reservoir opening 65a into the resin reservoir 63a or through the resin reservoir opening 65b into the resin reservoir 63b.

[0137] In this process, a portion of the liquid resin 83 located in zone 85 also flows towards the resin reservoir opening 65. Therefore, even if bubbles are present in a portion of the liquid resin 83 in zone 85, these will be removed from area RC2.

[0138] The forming tool is then used in the same way as described in Fig. 22 and Fig. The step shown in 23 is removed, resulting in a semiconductor device sealed with casting resin. In the finished semiconductor device 1, as in the one shown in Fig. 36 Semiconductor component 1 also has two resin reservoir residues 34b on the second side area 33b.

[0139] In the above-described method for manufacturing a semiconductor device, each resin reservoir opening 65 (65a, 65b) is arranged in a position (in the Y-axis direction) that is spaced (positively or negatively) Y-axis away from the position of the casting channel 61 (in the Y-axis direction). Therefore, in the same manner as described above, even if bubbles remain in a portion of the liquid resin 83 located in zone 85, these are removed from zone 85 (position 87) when the liquid resin 83 attempts to flow through the resin reservoir opening 65 into the resin reservoir 63. This allows the electrical insulation at the first main surface 33e in the casting resin 33 (see Fig. 3) be reliably ensured.

[0140] Furthermore, the frame 37 has recesses 41a and 41b. Recess 41a is shaped to expose resin reservoir 39a. Recess 41b is shaped to expose resin reservoir 39b. With this setup, if a portion of the casting resin that has flowed into and hardened in resin reservoirs 63a and 63b is removed using a punch, the punch can be brought into contact with this portion of the casting resin and efficiently removed without coming into contact with the frame 37.

[0141] Since the frame 37 has recesses 41a and 41b, the capacity of the resin reservoirs 63a and 63b can be increased by the amount corresponding to the volume of the recesses 41a and 41b (the area in the XY plane of the recesses 41a and 41b × the thickness of the frame 37).

[0142] Since the frame has 37 recesses 41a and 41b, the cross-sectional area of ​​the region connected to the vent (not shown) is larger compared to the case where no recess was formed. This design allows more air to be directed into the vent, reducing the amount of air trapped in the liquid resin and thus preventing residual bubbles.

[0143] Furthermore, in the above-described method for manufacturing a semiconductor device, when the conductor holder 43 is removed with the aid of a punch (not shown), a region is created by the projection 93a and the projection 93b, which are formed in the lower form 53, in which the frame 37 is supported by the lower form 53. This arrangement ensures that the conductor holder 43 is stripped off.

[0144] In the semiconductor manufacturing device described above, the forming tool 51 (lower form 53) has a projection 93a and a projection 93b. As in Fig. As shown in Figure 40, the mold 51 can be a mold 51 that does not have a projection 93a or 93b. In this case, a portion of the casting resin that has flowed into and hardened in each of the resin reservoirs 63a and 63b, and of the conductor holder 43, are preferably removed simultaneously by a punch (not shown).

[0145] In the semiconductor manufacturing device described above, the resin reservoir opening 65 (65a, 65b) extends in the X-axis direction. As in Fig. As shown in Figure 41, the direction in which the resin reservoir opening 65 (65a, 65b) extends in the molding tool 51 can be inclined in a direction that intersects the X-axis direction.

[0146] The resin reservoir opening 65a can be inclined in the Y-axis direction (negative direction), for example by an angle AL1 relative to the X-axis direction. The resin reservoir opening 65b can be inclined in the Y-axis direction (positive direction), for example by an angle AL2 relative to the X-axis direction.

[0147] When using such a molding tool 51, the flow resistance of the liquid resin flowing through the resin reservoir openings 65a and 65b is increased, and residual bubbles can be prevented, while at the same time reducing the amount of liquid resin flowing into the resin reservoirs 63a and 63b.

[0148] As in Fig. As shown in Figure 42, together with the inclined area 67 on the side closer to the resin reservoir opening 65, a step area 97 can be formed in a region of the resin reservoir 63. Such a step area 97 can increase the gap between the casting resin 33 and the casting resin 99 that has flowed into the resin reservoir 63 and hardened, as shown in Figure 42. Fig. Figure 43 (dashed frame S) illustrates this. In this way, the hardened casting resin 99 can be easily removed from the casting resin 33 using a stamp (not shown).

[0149] As in Fig. As shown in Figure 44, the mold 51 does not necessarily have a stepped section so that the capacity of the resin reservoir 63 remains as large as possible. Both in Fig. 42 as well as in Fig. 44 is an inclined area 64, which is arranged in an area of ​​the resin reservoir 63 in which the resin reservoir opening 65 is not located, represented by a dashed line.

[0150] In the resin reservoir 63 of the mold 51 described above, compared to the technique of the comparative example (PTD 1), the flow of the liquid resin 83 into the resin reservoir 63 is prevented because the resin reservoir opening 65 has a smaller cross-sectional area and is connected to the resin reservoir 63. Since resin reservoir openings 65a and 65b are also present, the flow of liquid resin is distributed to the resin reservoir opening 65.

[0151] In this setup, even if the capacity of the resin reservoir 63 corresponds to approximately one-tenth of the volume of the semiconductor device 1, the time required for the liquid resin 83 to flow into the resin reservoir 63 can be extended. Even if a portion of the liquid resin 83 in zone 85 (see Fig. 19) If bubbles remain, they can be removed from zone 85 (position 87) before the liquid resin 83 flows into the resin reservoir 63. Furthermore, the amount of liquid resin 83 flowing into the resin reservoir 63 can be reduced, which contributes to lowering production costs.

[0152] In the finished semiconductor device 1, the resin injection residue 34a and the casting channel residue 34c remain on a surface of the semiconductor device 1 sealed in the first cavity 52a. The area of ​​the resin injection residue 34a and the area of ​​the casting channel residue 34c are essentially equal (see Fig. 6) On the other hand, the casting channel residue 34c and the resin reservoir residue 34b remain on a surface of the semiconductor device 1 sealed in the second cavity 52b. The area of ​​the resin reservoir residue 34b is smaller than the area of ​​the casting channel residue 34c (see Fig. 1) The surface of the resin residue 34, which includes the resin reservoir residue 34b, is rough and can be easily identified by the appearance (casting resin 33) of the semiconductor device 1. Fourth embodiment

[0153] A semiconductor manufacturing device according to a fourth embodiment is described. A semiconductor manufacturing device is now described in which a mold is used in which the casting resin that has flowed into the resin reservoir 63 and cured can be used for assembly.

[0154] First, a forming tool is described. As in Fig. As shown in Figure 47, the upper form 55 of the mold tool 51 has a resin reservoir opening 65 and a resin reservoir 63. The position (in the Z-axis direction) of the ceiling of the resin reservoir 63 is arranged in a position that is higher than the position (in the Z-axis direction) of the ceiling of the cavity 52.

[0155] The distance from the lower end of the upper mold 55 to the ceiling of the cavity 52 is defined as distance L19a, and the distance from the lower end of the upper mold 55 to the ceiling of the resin reservoir 63 is defined as distance L19b. In the mold tool 51, the resin reservoir 63 in the upper mold 55 is designed such that distance L19b is greater than distance L19a.

[0156] A method for manufacturing a semiconductor device using the forming tool 51 described above is now described. The conductor frame 45 with the power semiconductor elements 21 and the like mounted on it is formed as in the method for manufacturing a semiconductor device described according to the first embodiment (see Fig. 15). Next, the ladder frame 45 (see Fig. 15) in the Fig. 47 shown form tool 51 arranged.

[0157] Then cavity 52 is constructed in the same way as in the one described above. Fig. 16, Fig. 17, Fig. 18, Fig. 19, Fig. 20 to Fig. In the step shown in Figure 21, the mold is gradually filled with liquid resin. The liquid resin flowing into the resin reservoir 63 hardens. The mold tool 51 is then removed. At this point, the casting resin 99 that has flowed into the resin reservoir 63 and hardened (see Figure 21) is removed. Fig. 48) is not removed, whereby the casting resin 99 remains bonded to the casting resin 33. In this way, the semiconductor device 1 (see Fig. 48) completed, wherein the casting resin 99 is combined with the casting resin 33 as a sealing material mass.

[0158] Next, as in Fig. 48 and Fig. As shown in Figure 49, the semiconductor device 1 is mounted on an electronic circuit board 101. The semiconductor device 1 is positioned on the electronic circuit board 101 with a conductive adhesive 103 in between. The casting resin 99 is inserted into an opening 101a previously formed in the electronic circuit board 101. Cream solder, for example, is used as the conductive adhesive 103.

[0159] Subsequently, the conductive adhesive 103 is melted by reflow and then cooled, causing the conductive adhesive 103 to harden and the semiconductor component 1 to be attached to the electronic circuit board 101.

[0160] When the semiconductor component 1 described above is mounted on the electronic circuit board 101, displacement of the semiconductor component 1 during the reflow step can be prevented. This will now be described.

[0161] The weight of the semiconductor device 1 with mounted power semiconductor elements and the like is greater than the weight of a conventional surface-mounted component mounted on an electronic circuit board. The adhesive strength of the conductive adhesive 103 before curing is weaker than the adhesive strength after curing.

[0162] In the reflow step, the semiconductor component 1 cannot therefore be fixed to the electronic circuit board 101 by the adhesive force of the conductive adhesive 103, for example when the electronic circuit board 101 is transported, and the semiconductor component 1 can be moved from the mounting position on the electronic circuit board 101.

[0163] In the semiconductor device 1 described above, the casting resin 99 is still bonded to the casting resin 33. The electronic circuit board 101 has an opening 101a into which the casting resin 99 is fitted. When the semiconductor device 1 is positioned on the electronic circuit board 101, the casting resin 99 is inserted into the opening 101a provided in the electronic circuit board 101.

[0164] In this way, the positioning of the semiconductor component 1 on the electronic circuit board 101 is carried out. As a result, displacement of the semiconductor component 1 from its mounting position on the electronic circuit board 101 during the reflow step can be prevented. Furthermore, since displacement of the semiconductor component 1 from its mounting position on the electronic circuit board 101 is prevented, the amount of conductive adhesive 103 can be reduced to the required minimum. Fifth embodiment

[0165] A semiconductor manufacturing device according to a fifth embodiment is described. This semiconductor manufacturing device uses a mold that has multiple resin reservoirs.

[0166] First, a forming tool is described. As in Fig. As shown in Figure 50, the mold tool 51 (lower mold 53) has, for example, a resin reservoir 63c, a resin reservoir 63d and a resin reservoir 63e as resin reservoir 63. Resin reservoir 63c, resin reservoir 63d and resin reservoir 63e are connected in series.

[0167] The resin reservoir opening 65 is configured to establish a connection between the resin reservoir 63c and the second cavity 52b. An inter-resin reservoir opening 70 is configured as an inter-sealing material reservoir opening that connects the resin reservoirs 63. An inter-resin reservoir opening 70a is configured as an inter-sealing material reservoir opening that connects the resin reservoirs 63c and 63d. An inter-resin reservoir opening 70b is configured as an inter-sealing material reservoir opening that establishes a connection between the resin reservoir 63d and the resin reservoir 63e. The cross-sectional areas of the resin reservoir opening 65 and the inter-resin reservoir openings 70a and 70b can be the same or different, but are preferably smaller than the cross-sectional area of ​​the resin injection opening 59.

[0168] The further structure is similar to that in Fig. 8 shown structure of the forming tool 51, wherein identical elements are designated with the same reference numerals and are not further explained unless necessary.

[0169] A method for manufacturing a semiconductor device using the forming tool 51 described above is now described. The conductor frame 45 with the power semiconductor elements 21 and the like mounted on it is formed in the same way as in the method for manufacturing a semiconductor device described according to the first embodiment (see Fig. 15). Then the ladder frame 45 is as shown in Fig. 51 shown arranged in the forming tool 51.

[0170] Subsequently, cavity 52 is prepared in the same manner as in the one described above. Fig. 16, Fig. 17, Fig. 18, Fig. 19, Fig. 20 to Fig. In the step shown in Figure 21, the second cavity 52b is gradually filled with liquid resin. The liquid resin from the second cavity 52b flows through the resin reservoir opening 65 into the resin reservoir 63c. When the resin reservoir 62 is filled with liquid resin, the liquid resin flows through the inter-resin reservoir opening 70a into the resin reservoir 63d. The liquid resin that has flowed into the resin reservoir 63d flows through the inter-resin reservoir opening 70b into the resin reservoir 63e. After the liquid resin that has flowed into the cavity 52 has cured, the mold 51 is removed, resulting in a resin-sealed semiconductor device.

[0171] In the above-described process for manufacturing a semiconductor device, the mold 51 has a resin reservoir 63c, a resin reservoir 63d, and a resin reservoir 63e as resin reservoir 63. Resin reservoir 63c, resin reservoir 63d, and resin reservoir 63e are connected in series by inter-resin reservoir openings 70.

[0172] Therefore, compared to a mold tool that has a resin reservoir with a capacity equal to the total capacity of resin reservoir 63c, resin reservoir 63d and resin reservoir 63e, the rate at which the liquid resin successively fills resin reservoir 63c, resin reservoir 63d and resin reservoir 63e is lower.

[0173] Therefore, 52 bubbles are formed in the cavity in zone 85 (see Fig. 17 et al.) easily carried away from the cavity 52. ​​As a result, the electrical insulation on the side of the first main surface 33e in the casting resin 33 (see Fig. 3 et al.) are ensured.

[0174] In these embodiments, power semiconductor elements are mentioned as an example of semiconductor elements. However, these embodiments can also be applied to semiconductors other than power semiconductor elements.

[0175] The semiconductor manufacturing equipment and manufacturing processes described in the embodiments can be combined in various ways if required.

[0176] The semiconductor device encompasses the following aspect. (Note 1)

[0177] Semiconductor component that features: a conductor connection; a chip mounting surface connected to the conductor connection; a semiconductor element mounted on the chip's footprint; and a sealing material that seals the chip mounting surface and the semiconductor element in such a way that part of the conductor connection is exposed, wherein the sealing material has a first side area and a second side area that are spaced apart from each other in a first direction, The first side area has a residue of sealing material, and a mass of sealing material protrudes from the second side area. (Note 2)

[0178] Semiconductor device according to Note 1, further comprising an electronic circuit board having an opening, wherein the semiconductor component is mounted on the electronic circuit board and the sealing material compound is inserted into the opening.

[0179] The embodiments disclosed herein are for illustrative purposes only and should not be understood as limiting in every respect. The scope of the present invention is not defined in the preceding description but in the claims, which include all modifications that fall within the scope and equivalence of the claims. COMMERCIAL APPLICABILITY

[0180] The present disclosure is successfully used in a semiconductor device manufactured by injection molding and a method for its manufacture. Reference symbol list 1 power semiconductor device, 3 power supply conductors, 5 Power supply conductor connection, 7, 7a, 7b ladder step area, 9 large chip contact area, 11a, 11b, 11c terminal end, 13 angled area, 15, 15a, 15b, 15c small chip contact area, 17a, 17b, 17c distal end, 19 conductive adhesives, 21 Power semiconductor element, 23 IC conductors, 25 IC conductor connection, 27 conductive adhesives, 29 IC element, 31 wire, 33 Casting resin, 33a first page section, 33b second page area, 33c third page area, 33d fourth page area, 33e first main area, 33f second main area, 34 Resin residue, 34a Resin injection residue, 34b Resin reservoir residue, 34c Casting channel residue, 35 Steg, 37 frames, 39, 41a, 41b recess, 43 ladder holders, 45 ladder frames, 51 forming tool, 52 cavity, 52a first cavity, 52b second cavity, 53 lower form, 53a upper surface, 55 upper form, 55a lower surface, 57 stamps, 59 Resin injection opening, 61 Casting channel, 63, 63a, 63b, 63c, 63d, 63e resin reservoir, 64 sloping area, 65, 65a, 65b, 65c, 65d Harz reservoir opening, Sections 66a and 66b 67 sloping area, 67a upper area, 69 movable pen, 79, 79a, 79b Vent opening, 70, 70a, 70b Inter-Harz reservoir opening, 81 resin tablets, 83 liquid resin, 85 zone, 87th position, 93a, 93b advantage, 97 step range, 99 Casting resin, Diameter D W, Wa, Wb width, AL1, AL2 angles, L10, L11, L12, L14a, L14b, L15a, L15b, L16a, L16b, L17 length, L18 distance, L19a, L19b length, LZ4, LZ5 height, LY1, LY2 width, 101 electronic circuit board, 101a Opening, 103 conductive adhesives.

Claims

[1] Semiconductor manufacturing apparatus in which a cavity (52) extending in a first direction (x) is formed by a forming tool (51) comprising a lower shape (53) and an upper shape (55), a conductor frame (45) provided with a semiconductor element (21) having a large chip support area (9) and a small chip support area (15) in which cavity (52) is arranged and a sealing material (33) is injected into the cavity (52) to seal the conductor frame (45) together with the semiconductor element (21), the semiconductor manufacturing apparatus comprising: a sealing material injection opening (59) through which the sealing material (33) is injected into the cavity (52); at least one sealing material reservoir (63) which is arranged in the first direction (x) at a distance from one side on which the sealing material injection opening (59) is located, on the other side of the intervening cavity (52), wherein the sealing material (33) flowing through the cavity (52) is received in the sealing material reservoir (63); and a sealing material reservoir opening (65) that connects the cavity (52) to the sealing material reservoir (63), wherein the sealing material injection opening (59) has a first opening cross-sectional area, the sealing material reservoir opening (65) has a second opening cross-sectional area, the second opening cross-sectional area is smaller than the first opening cross-sectional area, and the sealing material injection opening (59) is located in a position that is closer to the large chip support surface (9) than to the small chip support surface (15). [2] Semiconductor manufacturing apparatus according to claim 1, wherein the sealing material reservoir opening (65) and the sealing material reservoir (63) are arranged in the lower form (53) and / or the upper form (55). [3] Semiconductor manufacturing apparatus according to claim 1 or 2, wherein the sealing material reservoir opening (65) a first section (66a) which is located on the side that is closer to the cavity (52) and has the second opening cross-sectional area, and a second section (66b) which is located on the side that is closer to the sealing material reservoir (63) than the first section (66a) and has a third opening cross-sectional area which is larger than the second opening cross-sectional area. [4] Semiconductor manufacturing apparatus according to claim 3, which further comprises an inclined section (67) which is inclined from the first section (66a) to the second section (66b). [5] Semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein the sealing material reservoir opening (65) is arranged in a position that is closest to the sealing material injection opening (59) on the other side. [6] Semiconductor manufacturing apparatus according to any one of claims 1 to 5, wherein the sealing material reservoir opening (65) is arranged at a position which is spaced apart in a second direction (y) which intersects the first direction (x) from the position which is closest to the sealing material injection opening (59) on the other side. [7] Semiconductor manufacturing apparatus according to any one of claims 1 to 6, wherein the sealing material reservoir (63) a first reservoir of sealing material (63a) and a second sealing material reservoir (63b) includes, and the sealing material reservoir opening (65) a first sealing material reservoir opening (65a) that connects the cavity (52) to the first sealing material reservoir (63a), and a second sealing material reservoir opening (65b) which connects the cavity (52) to the second sealing material reservoir (63b). [8] Semiconductor manufacturing apparatus according to any one of claims 1 to 7, wherein the sealing material reservoir opening (65) connects the cavity (52) and the sealing material reservoir (63) in a direction that intersects the first direction (x). [9] Semiconductor manufacturing apparatus according to any one of claims 1 to 6, wherein the sealing material reservoir (63) comprises at least one sealing material reservoir (63c) and another sealing material reservoir (63d), the sealing material reservoir opening (65) connects the cavity (52) with the one sealing material reservoir (63c), and that one sealing material reservoir (63c) is connected to the other sealing material reservoir (63d) by an inter-sealing material reservoir opening (70). [10] Method for manufacturing a semiconductor device comprising the following steps: Preparing a conductor frame (45) which has a large chip support area (9) and a small chip support area (15); Mounting a semiconductor element (21) on the conductor frame (45); Preparing a forming tool (51) comprising a lower form (53) and an upper form (55) and having a cavity (52) formed by means of the lower form (53) and the upper form (55); Arranging the conductor frame (45) on which the semiconductor element (21) is arranged in the forming tool (51); Injecting a sealing material (33) into the cavity (52); and Removing the molding tool (51); wherein the step of preparing a molding tool (51) comprises a step in which a molding tool (51) is prepared which has: a sealing material injection opening (59) which is located at a position closer to the large chip support surface (9) than to the small chip support surface (15), which has a first opening cross-sectional area and through which the sealing material (33) is guided in order to inject the sealing material (33) in the direction of the cavity (52); at least one sealing material reservoir (63) which is arranged opposite a first side on which the sealing material injection opening (59) is located, on a second side of the intermediate cavity (52), wherein the sealing material (33) flowing through the cavity (52) is received in the sealing material reservoir (63); and a sealing material reservoir opening (65) having a second opening cross-sectional area smaller than the first opening cross-sectional area connecting the cavity (52) to the sealing material reservoir (63), and wherein the step of injecting the sealing material (33) into the cavity (52) includes a step in which the sealing material (33) is injected until the sealing material (33) filling the cavity (52) flows into the sealing material reservoir (63). [11] Method for manufacturing a semiconductor device according to claim 10, where The step of removing the forming tool (51) includes the following steps: Separating a portion of the sealing material (33, 99) that has flowed into the sealing material reservoir (63) from the sealing material (33) filling the cavity (52); and Separating a part of the sealing material (33) arranged at the sealing material injection opening (59) from the sealing material (33) filling the cavity (52). [12] Method for manufacturing a semiconductor device according to claim 10 or 11, wherein the step of preparing a conductor frame (45) comprises a step of preparing a conductor frame (45) having a chip support surface (9, 15) and an area serving as a conductor connection (25), wherein the height position of the chip support surface (9, 15) differs from the height position of the area serving as a conductor connection (25), wherein the step of mounting the semiconductor element (21) on the conductor frame (45) includes a step to mount the semiconductor element (21) on the large chip support area (9) and the small chip support area (15), wherein the step of arranging the conductor frame (45) in the forming tool (51) comprises a step of arranging the conductor frame (45) such that a first space to be filled (RC2), having a first distance in the vertical direction, is formed between the chip support surface (9, 15) and a region of the lower form (53) forming the cavity (52), and that a second space to be filled (RC1), having a second distance which is longer in the vertical direction than the first distance, is formed between the chip support surface (9, 15) and a region of the upper form (55) forming the cavity (52), and wherein the step of injecting a sealing material (33) includes a step of filling the first space to be filled (RC2) and the second space to be filled (RC1) with the sealing material (33). [13] Method for manufacturing a semiconductor device according to one of claims 10 to 12, wherein the step of preparing a conductor frame (45) comprises a step of preparing a conductor frame (45) with a recess (39) which does not cover a zone in which the sealing material reservoir (63) is located when the conductor frame (45) is arranged in the molding tool (51). [14] Semiconductor device which features: a large chip mounting surface (9) on which a semiconductor element (21) is mounted; a small chip mounting area (15) on which a semiconductor element (21) different from the one semiconductor element (21) is mounted; and a sealing material (33) that seals the large chip support area (9), the small chip support area (15), one semiconductor element (21) and the other semiconductor element (21), where the sealing material (33) has a first side area (33a) and a second side area (33b) which are spaced apart from each other in a first direction (x), the first side area (33a) has a first sealing material residue (34a), the second side area (33b) has at least one second sealing material residue (34b), wherein the second sealing material residue (34b) has a smaller area than the first sealing material residue (34a), and wherein the first sealing material residue (34a) is located at a position closer to the large chip support area (9) than to the small chip support area (15). [15] Semiconductor device according to claim 14, wherein the second sealing material residue (34b) in the second side region (33b) has been left at a position opposite the first sealing material residue (34a) in the first direction (x). [16] Semiconductor device according to claim 14 or 15, wherein the sealing material (33) comprises: a first sealing material area (33) covering one side on which the one semiconductor component (21) is mounted on the large chip support surface (9), and a second sealing material area (33) covering a side opposite the side on which the one semiconductor component (21) is mounted on the large chip support surface (9), and the thickness (L1) of the second sealing material area (33) is less than the thickness (L2) of the first sealing material area (33). [17] Semiconductor device according to one of claims 14 to 16, wherein the second sealing material residue (34b) in the second side region (33b) has been left in a position which is spaced along the second side region (33b) from a position which is opposite the first sealing material residue (34a) in the first direction (x).

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