Shower head, substrate processing device, and substrate processing method

Abstract

To provide technology that enables the deactivation of a radicalized gas to be suppressed.SOLUTION: A shower head comprises a structure, a first diffusion chamber, a second diffusion chamber, and a plurality of cylindrical parts. The shower head further includes a plurality of first discharge openings provided on a discharge plane of the structure, communicating with the first diffusion chamber and discharging a first gas, and a plurality of second discharge openings which are provided at a position different form the first discharge openings regarding the discharge plane, and which communicate with the communicating holes of the plurality of cylindrical parts and discharge a second gas. The shower head further includes a middle supply chamber provided in the middle in a direction orthogonal to the thickness direction of the structure separately from the first and the second diffusion chambers, for circulating a radicalized third gas, and one or more third discharge openings provided at the center of the discharge plane, for communicating with the middle supply chamber and discharging the third gas.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a showerhead, a substrate processing apparatus, and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a film forming apparatus (substrate processing apparatus) including a container (processing container) for accommodating a substrate, and a gas supply unit for supplying two types of gas to the processing container. The gas supply unit of the substrate processing apparatus includes a separate cleaning gas source, and is configured to supply cleaning gas radicalized by remote plasma to the processing container to clean the inside of the processing container.

[0003] Patent Document 2 also discloses a film forming apparatus (substrate processing apparatus) that performs cleaning by supplying a cleaning gas into a processing vessel. The cleaning gas is diffused in a shower head and discharged into a processing space from a plurality of discharge holes. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2023-25578 A [Patent Document 2] WO 2008 / 7675 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique capable of suppressing deactivation of gas radicals. [Means for solving the problem]

[0006] According to an aspect of the present disclosure, there is provided a showerhead including a structure, a first diffusion chamber extending inside the structure in a direction perpendicular to a thickness direction of the structure and diffusing a first gas, a second diffusion chamber adjacent to the first diffusion chamber in the thickness direction inside the structure and independent of the first diffusion chamber, diffusing a second gas, a plurality of cylindrical portions disposed in the first diffusion chamber and having communication holes on an inner side thereof communicating with the second diffusion chamber, a plurality of first outlets provided on a discharge surface of the structure and communicating with the first diffusion chamber to discharge the first gas, a plurality of second outlets provided at positions different from the first outlets on the discharge surface and communicating with the communication holes of the plurality of cylindrical portions to discharge the second gas, a central supply chamber provided in a center portion in a direction perpendicular to the thickness direction of the structure, separate from the first diffusion chamber and the second diffusion chamber, for circulating a radicalized third gas, and one or more third outlets provided in a center portion of the discharge surface and communicating with the central supply chamber to discharge the third gas. Effect of the Invention

[0007] According to one embodiment, deactivation of the radicalized gas can be suppressed. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view illustrating a substrate processing apparatus having a shower head according to an embodiment of the present invention. [Diagram 2] 11 is a perspective view showing the vertical upper side of a diffusion chamber member that forms a second diffusion chamber. FIG. [Diagram 3] 11 is an inverted perspective view showing the lower vertical side of a diffusion chamber member that forms a first diffusion chamber. FIG. [Figure 4] FIG. 2 is a perspective view showing a lid body and an introduction structure. [Diagram 5] 1 is a flowchart showing a process flow of a substrate processing method. [Figure 6]Fig. 6(A) is an enlarged cross-sectional view showing the gas flow in the main structure of the shower head in the source gas supply step, and Fig. 6(B) is an enlarged cross-sectional view showing the gas flow in the main structure of the shower head in the reaction gas supply step. [Figure 7] FIG. 4 is an enlarged cross-sectional view showing the gas flow in the main structure during cleaning processing. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0010] Fig. 1 is a cross-sectional view that illustrates a substrate processing apparatus 1 having a shower head 50 according to an embodiment. As illustrated in Fig. 1, the substrate processing apparatus 1 is configured as an apparatus that forms a film on a surface of a substrate W by chemical vapor deposition (CVD) or atomic layer deposition (ALD). The substrate W to be processed may be a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer.

[0011] Specifically, the substrate processing apparatus 1 includes a processing vessel 10, a substrate support unit 20, a gas supply unit 30, a gas exhaust unit 40, and a shower head 50. Furthermore, the substrate processing apparatus 1 includes a control device 90 that controls each component to perform substrate processing.

[0012] The processing vessel 10 has an internal space 10s for accommodating and processing the substrate W. For example, the processing vessel 10 includes a vessel body 11 having a concave shape in a side cross-sectional view, in which a cylindrical side wall 11a and a circular bottom wall 11b are formed so as to be continuous, and a lid body 12 for covering an upper open portion of the vessel body 11. The upper end of the side wall 11a and the lower surface of the lid body 12 are fixed airtightly via a sealing member (not shown).

[0013] The processing vessel 10 (vessel body 11, lid 12) is formed of a metal material such as aluminum or an aluminum alloy. The processing vessel 10 is not limited to this, and may be made of a highly heat-resistant material such as stainless steel, a low thermal expansion metal or alloy (invar, invar), or a low thermal expansion ceramic (inorganic material). The processing vessel 10 may also include a heating element (not shown) for heating the processing vessel 10 inside or around the vessel body 11 or lid 12.

[0014] Furthermore, the substrate processing apparatus 1 is provided with a load / unload port 15 for loading / unloading the substrate W, and a gate valve 16 for opening and closing the load / unload port 15, at predetermined positions on the side wall 11a of the processing chamber .

[0015] On the other hand, the substrate support unit 20 includes a susceptor 21 that directly holds the substrate W, a support member 22 that supports the susceptor 21, and a susceptor operating mechanism 23 that supports the support member 22 outside the processing vessel 10. The susceptor 21 is made of a metal such as aluminum or nickel, and is supported by the support member 22 inside the processing vessel 10. The susceptor 21 is formed in a perfect circle shape that is slightly larger than the substrate W, and has a mounting surface 21s on its upper surface that horizontally supports the substrate W. The susceptor 21 also includes a temperature adjustment unit 21a therein for adjusting the temperature of the substrate W mounted on the mounting surface 21s. The temperature adjustment unit 21a is configured by combining a flow path through which a temperature adjustment medium flows, a heater, and the like, and adjusts the temperature of the substrate W under the control of the control device 90.

[0016] The support member 22 is connected to the center of the bottom surface of the susceptor 21. The support member 22 passes through a hole formed in the bottom wall 11b of the processing vessel 10, extends below the processing vessel 10, and has a lower end connected to a susceptor operating mechanism 23.

[0017] The susceptor operation mechanism 23 has a function of raising, lowering and rotating the susceptor 21 via the support member 22. Specifically, the susceptor operation mechanism 23 displaces the susceptor 21 between a processing position where the substrate W is processed and a transfer position below the processing position where the substrate W is received and transferred. When the susceptor 21 is raised to the processing position, a processing space PS for substrate processing is formed between the shower head 50 and the susceptor 21 in the internal space 10s of the processing vessel 10. In addition, the susceptor operation mechanism 23 rotates the susceptor 21 during substrate processing of the substrate W.

[0018] Furthermore, the substrate support unit 20 has a pin lifting mechanism that raises and lowers a plurality of support pins (not shown). With the susceptor 21 placed at the transfer position by the susceptor operating mechanism 23, the pin lifting mechanism receives and delivers the substrate W to and from a transfer device (not shown) that advances and retreats through the load / unload port 15 by being controlled in elevation by the control device 90.

[0019] The gas supply unit 30 supplies a plurality of types of gases from the outside of the processing vessel 10 to the internal space 10s (processing space PS) of the processing vessel 10 through the shower head 50. The type of gas supplied by the gas supply unit 30 is selected appropriately according to the type of film to be formed on the substrate W. In the embodiment, the substrate processing apparatus 1 forms a polyurea film on the surface of the substrate W by substrate processing. In this case, the gas supply unit 30 supplies a gas of an isocyanate group compound (first gas: hereinafter referred to as a raw material gas) which is a processing gas to be adsorbed on the substrate W, and a gas of an amine group compound (second gas: hereinafter referred to as a reaction gas) which is a processing gas that reacts with the raw material gas. Furthermore, the gas supply unit 30 supplies a gas such as oxygen (O2) or ozone (O3) (third gas: hereinafter referred to as a cleaning gas) as a processing gas for cleaning the inside of the processing vessel 10. In addition to the above, the film formed on the substrate W may be a metal film, a metal oxide film, a metal nitride film, a silicon film, a silicon oxide film, a silicon nitride film, or the like.

[0020] The gas supply unit 30 supplies three types of gases (source gas, reactive gas, and cleaning gas) at appropriate timing under the control of the control device 90. For this reason, the gas supply unit 30 includes a source gas supply unit 31, a reactive gas supply unit 32, and a cleaning gas supply unit 33, which are separately connected to the shower head 50.

[0021] The raw material gas supply unit 31 has a raw material gas supply path 311 connected to the shower head 50. The raw material gas supply unit 31 also has a raw material gas source 312 at the upstream end of the raw material gas supply path 311, and also has a valve 313 and a flow rate regulator 314 at a midpoint of the raw material gas supply path 311. In supplying the raw material gas, the control device 90 opens the valve 313 to cause the raw material gas from the raw material gas source 312 to flow into the raw material gas supply path 311, and also adjusts the flow rate of the raw material gas by the flow rate regulator 314 before supplying it to the shower head 50.

[0022] The reactive gas supply unit 32 has a reactive gas supply path 321 connected to the shower head 50. The reactive gas supply unit 32 also has a reactive gas source 322 at the upstream end of the reactive gas supply path 321, and a valve 323 and a flow rate regulator 324 at an intermediate position of the reactive gas supply path 321. In supplying the reactive gas, the control device 90 opens the valve 323 to allow the reactive gas from the reactive gas source 322 to flow into the reactive gas supply path 321, and also adjusts the flow rate of the reactive gas by the flow rate regulator 324 before supplying it to the shower head 50.

[0023] The cleaning gas supply unit 33 has a cleaning gas supply path 331 connected to the shower head 50. The cleaning gas supply unit 33 has a cleaning gas source 332 at the upstream end of the cleaning gas supply path 331, and also has a valve 333, a flow rate regulator 334, and a remote plasma device 335 at intermediate positions on the cleaning gas supply path 331. In supplying the cleaning gas, the control device 90 opens the valve 333 to allow the reactive gas from the cleaning gas source 332 to flow into the cleaning gas supply path 331, and also adjusts the flow rate of the cleaning gas by the flow rate regulator 334.

[0024] The remote plasma device 335 is a process for radicalizing a cleaning gas outside the processing vessel 10. For example, the remote plasma device 335 introduces microwaves generated by a microwave generator (not shown) through a waveguide to a plasma generation chamber (not shown) that communicates with the cleaning gas supply path 331, and radicalizes the cleaning gas supplied there by the microwaves. Furthermore, the remote plasma device 335 causes the cleaning gas radicalized in the plasma generation chamber to flow into an introduction pipe 336 provided in the center of the lid 12, and supplies it from the introduction pipe 336 to the shower head 50.

[0025] The gas supply unit 30 may be configured to supply another type of gas, such as a purge gas, in addition to the above three types of gas. For example, a supply path for the purge gas is connected from a purge gas source (not shown) to a source gas supply path 311, a reactive gas supply path 321, and a cleaning gas supply path 331. Under the control of the control device 90, the gas supply unit 30 supplies the purge gas to the shower head 50 via these supply paths.

[0026] The gas exhaust unit 40 exhausts unreacted gas supplied to the internal space 10s of the processing vessel 10, reaction products generated by the reaction of the gas, and the like as exhaust gas. In particular, the gas exhaust unit 40 according to the embodiment is configured to be able to uniformly exhaust exhaust gas from above the substrate W and from all around in the circumferential direction.

[0027] Specifically, the gas exhaust unit 40 has an exhaust port 41 and an annular exhaust groove 42 communicating with the exhaust port 41, located above the side wall 11a of the processing vessel 10 (vessel body 11). The gas exhaust unit 40 also includes a baffle structure 43 that surrounds the inside of the exhaust groove 42 and has a plurality of holes communicating with the exhaust groove 42. The exhaust groove 42 is provided at a position higher than the substrate W placed at the processing position by the substrate support unit 20. The gas exhaust unit 40 guides the exhaust gas in the processing space PS upward through the baffle structure 43.

[0028] Further, the gas exhaust unit 40 has an exhaust path 45 connected to the exhaust port 41 outside the processing vessel 10, and includes a suction mechanism 46 for sucking exhaust gas into the exhaust path 45. The suction mechanism 46 is configured by appropriately combining, for example, a pressure control (APC) valve for adjusting the pressure inside the processing vessel 10, a turbo molecular pump for sucking the processing gas, a vacuum pump, and the like. The suction mechanism 46 operates under the control of the control device 90 to apply a negative pressure for guiding the exhaust gas inside the processing vessel 10. As a result, the exhaust gas present in the processing space PS during substrate processing flows into the exhaust groove 42 through each hole of the baffle structure 43, moves from the exhaust groove 42 to the exhaust port 41, and flows out into the exhaust path 45. The exhaust gas is discharged from the exhaust path 45 through the suction mechanism 46 to a waste part (not shown).

[0029] On the other hand, the shower head 50 of the substrate processing apparatus 1 is fixed to the lid 12, and supplies gas supplied from the gas supply unit 30 to the processing space PS (internal space 10s) of the processing vessel 10. The shower head 50 includes a main structure 51 fixed to the lower surface of the lid 12, and an introduction structure 52 fixed to the upper surface of the lid 12. That is, the main structure 51 is a structure disposed inside the processing vessel 10, and the introduction structure 52 is a structure disposed outside the processing vessel 10.

[0030] In substrate processing, the main structure 51 diffuses and supplies source gas and reactive gas to the substrate W placed on the susceptor 21 inside the processing vessel 10. In addition, in a cleaning process for cleaning the inside of the processing vessel 10, the main structure 51 cleans the susceptor 21 and its periphery by supplying a cleaning gas converted into radicals from the center of the processing vessel 10 (lid 12).

[0031] Specifically, the main structure 51 has a laminated structure in which two disk-shaped members (a diffusion chamber member 60 and a discharge member 70) are assembled vertically. The diffusion chamber member 60 is a member that separates and forms a diffusion chamber for a raw material gas and a diffusion chamber for a reactive gas by laminating the lid body 12 and the discharge member 70. The discharge member 70 is disposed at a position closer to the susceptor 21 than the diffusion chamber member 60, and is a member for discharging various gases. Note that the main structure 51 is not limited to a configuration in which two members are assembled, and may be integrally molded into one member by, for example, performing three-dimensional modeling (additive modeling as an example) using a modeling device (not shown) or the like.

[0032] With the lid 12, the diffusion chamber member 60, and the discharge member 70 assembled, the main structure 51 defines therein a first diffusion chamber 53 for diffusing the source gas, and a second diffusion chamber 54 for diffusing the reaction gas. The first diffusion chamber 53 and the second diffusion chamber 54 are provided adjacent to each other in the vertical direction, but independent of each other (not in communication with each other). Specifically, the first diffusion chamber 53 is disposed vertically below the second diffusion chamber 54.

[0033] The first diffusion chamber 53 is formed by closely contacting the surface of the diffusion chamber member 60 on the side facing the discharge member 70 (vertical lower side) with the discharge member 70. The first diffusion chamber 53 spreads inside the main structure 51 in a horizontal direction perpendicular to the thickness direction (vertical direction) of the main structure 51. The source gas is supplied to the first diffusion chamber 53 through the supply holes 641 of the multiple supply tubes 64 formed in the diffusion chamber member 60. The first diffusion chamber 53 diffuses the supplied source gas by flowing the source gas in the horizontal direction.

[0034] The second diffusion chamber 54 is formed by bringing the surface of the diffusion chamber member 60 facing the lid 12 (vertical upper side) into close contact with the lid 12. The second diffusion chamber 54 spreads inside the main structure 51 in a horizontal direction perpendicular to the thickness direction (vertical direction) of the main structure 51. A reactant gas is supplied to the second diffusion chamber 54 through a plurality of second lid-side flow paths 12b formed in the lid 12. The second diffusion chamber 54 diffuses the supplied reactant gas by flowing the reactant gas in the horizontal direction.

[0035] However, the horizontal center of the main structure 51 (diffusion chamber member 60) serves as a central supply chamber 55 for supplying a cleaning gas, separate from the second diffusion chamber 54. The central supply chamber 55 communicates with a flow path of an introduction pipe 336 provided in the center of the lid 12, and the cleaning gas is supplied from the introduction pipe 336.

[0036] Hereinafter, the specific configuration of the diffusion chamber member 60 that forms the first diffusion chamber 53, the second diffusion chamber 54, and the central supply chamber 55 will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a perspective view showing the vertical upper side of the diffusion chamber member 60 that forms the second diffusion chamber 54. Fig. 3 is a perspective view showing the vertical lower side of the diffusion chamber member 60 that forms the first diffusion chamber 53, inverted form.

[0037] As shown in FIG. 2, the diffusion chamber member 60 has a second diffusion chamber recess 60b on the vertical upper surface. The second diffusion chamber recess 60b forms the second diffusion chamber 54 when the diffusion chamber member 60 is fixed (sealed) to the lid 12. The second diffusion chamber recess 60b is formed by an outer edge portion 61 of the diffusion chamber member 60 that goes around in an annular shape and a bottom portion 62 that extends in the middle of the diffusion chamber member 60 in the thickness direction. The upper surface (projecting end surface) of the outer edge portion 61 is formed in a flat shape that can be in surface contact with the lid 12. Although not shown, the outer edge portion 61 is provided with a plurality of screw holes for screwing into the lid 12 along the circumferential direction. In addition, a seal member (not shown) may be disposed between the lid 12 and the outer edge portion 61 to enhance airtightness by sandwiching the seal member.

[0038] The diffusion chamber member 60 includes a partition wall 63 that endlessly wraps around a bottom 62 in the second diffusion chamber recess 60b, a plurality of supply cylinders 64, a plurality of heat transfer protrusions 65, and a plurality of fixing cylinders 66. The partition wall 63, each supply cylinder 64, each heat transfer protrusion 65, and each fixing cylinder 66 are formed at the same height (the same height as each other) from the bottom 62 to the upper surface of the outer edge portion 61. Therefore, when the lid body 12 and the outer edge portion 61 are in contact with each other, the partition wall 63, each supply cylinder 64, each heat transfer protrusion 65, and each fixing cylinder 66 are in contact with the lower surface of the lid body 12.

[0039] The partition wall 63 is provided in the center of the second diffusion chamber recess 60b, and separates the second diffusion chamber 54 from the central supply chamber 55. A supply chamber recess 63a is formed inside the partition wall 63. The supply chamber recess 63a forms the central supply chamber 55 when the diffusion chamber member 60 is fixed to the lid 12.

[0040] The partition wall 63 is formed in a substantially rectangular shape having rounded corners with a large radius of curvature in a plan view. A plurality of screw holes 632 for screwing into the cover body 12 are provided on the upper surface of the partition wall 63 along the circumferential direction. A plurality of central holes 621 for circulating the cleaning gas in the central supply chamber 55 downward in the vertical direction are provided on the bottom 62 constituting the supply chamber recess 63a. The central holes 621 are arranged, for example, in a matrix shape.

[0041] Furthermore, partition wall 63 has a plurality of horizontal holes 631 that communicate between second diffusion chamber recess 60b and supply chamber recess 63a. Each horizontal hole 631 extends in the horizontal direction and has a smaller flow passage cross-sectional area than the flow passage cross-sectional area of ​​each central hole 621. Each horizontal hole 631 allows the reaction gas to move from second diffusion chamber recess 60b toward supply chamber recess 63a.

[0042] Each supply cylinder 64 allows the source gas supplied through the lid 12 to flow into the first diffusion chamber 53. Each supply cylinder 64 has a supply hole 641 extending in the axial direction (vertical direction) on the inside. Each supply hole 641 penetrates the bottom 62 of the diffusion chamber member 60 and communicates with the first diffusion chamber 53. Each supply hole 641 is formed, for example, with a diameter larger than (or the same as) each central hole 621 described above.

[0043] Each heat transfer protrusion 65 contacts the lid 12 to transfer heat from the lid 12 to the bottom 62 and the discharge member 70. That is, the lid 12 has a temperature control unit (not shown) whose temperature is adjusted under the control of the control device 90, and is configured to be able to adjust the temperature of the source gas, the reaction gas, and the like supplied to the processing vessel 10. Each heat transfer protrusion 65 is formed of a material with high thermal conductivity and has a cylindrical shape. Note that each heat transfer protrusion 65 may be integrally molded from the same material as the outer edge portion 61 and the bottom portion 62. Each heat transfer protrusion 65 contacts the temperature-adjusted lid 12, and thus can smoothly transfer the temperature of the lid 12.

[0044] Each fixing cylinder 66 is a structural part for screwing the diffusion chamber member 60 to the lid 12, and has a screw hole 661 on the inside. The fixing cylinders 66 are arranged in a dispersed manner in the horizontal direction within the second diffusion chamber recess 60b. This allows the diffusion chamber member 60 to be fixed to the lid 12 with a substantially uniform fastening force in the planar direction (horizontal direction), further improving airtightness and heat transfer.

[0045] The diffusion chamber member 60 has a plurality of communication holes 622 at the bottom 62 between the outer edge 61 and the partition wall 63, through which the reaction gas supplied to the second diffusion chamber 54 (the second diffusion chamber recess 60b) flows out. The communication holes 622 are arranged between the supply cylinders 64, the heat transfer protrusions 65, and the fixing cylinders 66, and the number of the communication holes 622 is greater than the total number of the supply cylinders 64, the heat transfer protrusions 65, and the fixing cylinders 66. The diameter of each communication hole 622 is smaller than the diameter of the central hole 621. In this way, the communication holes 622 are formed in a large number and with a small diameter, so that the reaction gas can flow out from each communication hole 622 while being sufficiently diffused in the second diffusion chamber 54.

[0046] As shown in FIG. 3, the diffusion chamber member 60 has a first diffusion chamber recess 60a on the vertically lower surface. The first diffusion chamber recess 60a forms the first diffusion chamber 53 as the diffusion chamber member 60 is fixed (sealed) to the discharge member 70. The first diffusion chamber recess 60a is composed of an outer edge portion 67 of the diffusion chamber member 60 that goes around in an annular shape and the bottom portion 62 described above. The lower surface (projecting end surface) of the outer edge portion 67 is formed in a flat shape that can be in surface contact with the discharge member 70. Although not shown in the figure, the outer edge portion 67 is also provided with a plurality of screw holes for screwing into the discharge member 70 along the circumferential direction. In addition, a seal member (not shown) may be disposed between the outer edge portion 67 and the discharge member 70, and the airtightness may be improved by sandwiching the seal member. Alternatively, the diffusion chamber member 60 and the discharge member 70 may be integrated by a connecting means such as welding.

[0047] The diffusion chamber member 60 has a plurality of passing cylinders 68 at the bottom 62 in the first diffusion chamber recess 60a. Each passing cylinder 68 stands up from the bottom 62 at the same height as the lower surface of the outer edge portion 67 (at the same height as each other). Therefore, when the discharge member 70 and the outer edge portion 67 are in contact with each other, each passing cylinder 68 is in contact with the upper surface of the discharge member 70.

[0048] Each of the passage tubes 68 is isolated from the first diffusion chamber 53 and is a structural part that guides the reaction gas in the second diffusion chamber 54 to the discharge member 70. Each of the passage tubes 68 is arranged at a fixed interval from each other in the first diffusion chamber recess 60a. The raw material gas that flows into the first diffusion chamber recess 60a diffuses so as to spread around each of the passage tubes 68. For example, each of the passage tubes 68 is arranged in a matrix shape in which a plurality of the passage tubes 68 are arranged in a first direction and in a second direction perpendicular to the first direction. The arrangement of each of the passage tubes 68 is not limited to the illustrated example and may be designed arbitrarily.

[0049] Each passage tube 68 has a tube portion (hereinafter referred to as the central tube portion 681) having the above-mentioned central hole portion 621 on its inside, and a tube portion (hereinafter referred to as the outflow tube portion 682) having the above-mentioned communicating hole portion 622 on its inside.

[0050] A plurality of central cylinders 681 are provided in the center of the first diffusion chamber recess 60a, and are arranged at positions that overlap the supply chamber recess 63a on the opposite surface side (vertically upward). The central hole 621 of each central cylinder 681 penetrates in the vertical direction and communicates with the supply chamber recess 63a (central supply chamber 55) on the opposite surface side. As described above, the diameter of the central hole 621 of each central cylinder 681 is formed to be larger than the diameter of the communication hole 622, allowing the cleaning gas to flow smoothly.

[0051] A plurality of outflow cylinders 682 are provided around each central cylinder 681, and are arranged at positions that overlap with the second diffusion chamber recess 60b on the opposite surface side. The communication hole 622 of each outflow cylinder 682 penetrates in the vertical direction and communicates with the second diffusion chamber recess 60b (second diffusion chamber 54) on the opposite surface side.

[0052] The supply holes 641 of the supply cylinders 64 of the second diffusion chamber recess 60b communicate with the bottom of the first diffusion chamber recess 60a. The supply holes 641 are provided near the central cylinders 681 according to the arrangement of the supply cylinders 64. The first diffusion chamber recess 60a diffuses the source gas flowing in from the supply holes 641 in the horizontal direction, thereby allowing the source gas to flow out evenly through the discharge member 70.

[0053] 1, the discharge member 70 of the shower head 50 is formed in a disk shape that is thinner than the diffusion chamber member 60. The discharge member 70 has an upper surface that is a joint surface that is in close contact with the diffusion chamber member 60, and a lower surface that faces the mounting surface 21s of the susceptor 21 in the processing vessel 10. This lower surface serves as a discharge surface 70s that discharges gas.

[0054] The discharge surface 70s of the discharge member 70 includes a plurality of first discharge ports 71 for discharging a source gas, a plurality of second discharge ports 73 for discharging a reaction gas, and a plurality of third discharge ports 75 for discharging a cleaning gas.

[0055] Each of the first discharge ports 71 communicates with a first passage 72 extending in the thickness direction inside the discharge member 70. Each of the first passages 72 communicates with a first diffusion chamber 53 formed between the diffusion chamber member 60 and the discharge member 70 on the upper surface of the discharge member 70. Each of the first passages 72 is disposed between the passage tubes 68 of the first diffusion chamber 53 (for example, at the intermediate positions of the passage tubes 68 arranged in a matrix and adjacent to each other). Thus, each of the first passages 72 is also arranged in a matrix. Each of the first passages 72 passes the raw material gas supplied to the first diffusion chamber 53, thereby discharging the raw material gas from each of the first discharge ports 71.

[0056] Each second discharge port 73 is connected to each second passage 74 extending in the thickness direction inside the discharge member 70. Each second passage 74 is connected to the communication hole portion 622 of the plurality of outflow tube portions 682 (part of the passage tube portion 68) on the upper surface of the discharge member 70. Each second passage 74 is arranged in a matrix according to the arrangement of each outflow tube portion 682. The diameter of each second passage 74 is set to be smaller than the diameter of each communication hole portion 622. This allows each communication hole portion 622 and each second passage 74 to be stably connected when the diffusion chamber member 60 and the discharge member 70 are assembled. The communication hole portion 622 and each second passage 74 pass the reaction gas supplied to the second diffusion chamber 54, thereby discharging the reaction gas from each second discharge port 73.

[0057] Each of the third discharge ports 75 communicates with each of the third passages 76 extending in the thickness direction inside the discharge member 70. Each of the third passages 76 communicates with the central hole 621 of the central cylinders 681 (part of the passage cylinder 68) on the upper surface of the discharge member 70. The third passages 76 are arranged in a matrix shape according to the arrangement of the central cylinders 681. The diameter of each of the third passages 76 is set to be equal to or smaller than the diameter of each of the central holes 621. This allows each of the central holes 621 to communicate with each of the third passages 76 stably when the diffusion chamber member 60 and the discharge member 70 are assembled. However, the diameter of the third passage 76 may be larger than the diameter of the first passage 72 and the diameter of the second passage 74. This allows the central hole 621 and each of the third passages 76 to pass the radicalized cleaning gas in the central supply chamber 55 without deactivating it.

[0058] The introduction structure 52 of the showerhead 50 has a function of distributing the source gas and the reaction gas to a plurality of locations on the upper surface of the lid 12. The lid 12 has a plurality of first lid-side flow paths 12a communicating with the supply holes 641 of the supply tubes 64 of the main structure 51, and a plurality of second lid-side flow paths 12b communicating with the second diffusion chamber 54. Each of the first lid-side flow paths 12a is provided in the vicinity of the introduction pipe 336 in the center of the lid 12, and each of the second lid-side flow paths 12b is provided in a position radially outward of each of the first lid-side flow paths 12a.

[0059] The introduction structure 52 supplies a source gas to each of the first lid-side channels 12a and a reactant gas to each of the second lid-side channels 12b. Next, the configuration of the introduction structure 52 will be described with reference to Fig. 4. Fig. 4 is a perspective view showing the lid 12 and the introduction structure 52.

[0060] The introduction structure 52 is fixed so as to surround the periphery of the introduction pipe 336 for cleaning gas provided in the center of the lid body 12. The introduction structure 52 has a central portion 80 formed in a substantially rectangular shape in a plan view on the lid body 12, and a connection portion 81 that is connected to the central portion 80 and extends radially outward.

[0061] The introduction structure 52 has a source gas introduction port 82 and a reactant gas introduction port 83 at an extended end of a connection part 81. The source gas introduction port 82 is connected to a piping of a source gas supply path 311 (see FIG. 1) of the gas supply unit 30. The reactant gas introduction port 83 is connected to a piping of a reactant gas supply path 321 (see FIG. 1) of the gas supply unit 30. A first flow path 84 communicating with the introduction port 82 and through which the source gas flows, and a second flow path 85 communicating with the introduction port 83 and through which the reactant gas flows are provided inside the central part 80 and the connection part 81 of the introduction structure 52.

[0062] The first flow path 84 has a first unified flow path 841 extending in the connection portion 81. The first flow path 84 also has a first branch flow path 842 branching into two from the first unified flow path 841 in the central portion 80. The first flow path 84 has each of the first branch flow paths 842 extending around the introduction pipe 336, and has a first detailed branch flow path 843 branching into two further near the introduction pipe 336. The two first branch flow paths 842 are formed to have the same flow path shape (including length and flow path cross-sectional area), and the four first detailed branch flow paths 843 are also formed to have the same flow path shape (including length and flow path cross-sectional area). As a result, the first flow path 84 can distribute the source gas evenly to the four introduction lines around the introduction pipe 336, and can evenly introduce the source gas into the four first lid-side flow paths 12a in the lid 12.

[0063] Similarly, the second flow path 85 has a second unified flow path 851 extending in the connection portion 81. The second flow path 85 also has a second branch flow path 852 branching into two from the second unified flow path 851 in the central portion 80. The second flow path 85 has each second branch flow path 852 extending around the introduction pipe 336, and has a second detailed branch flow path 853 branching into two further near the introduction pipe 336 and radially outward from the first detailed branch flow path 843. The two second branch flow paths 852 are formed to have the same flow path shape (including length and flow path cross-sectional area), and the four second detailed branch flow paths 853 are also formed to have the same flow path shape (including length and flow path cross-sectional area). As a result, the second flow path 85 can also distribute the source gas evenly to the four introduction lines around the introduction pipe 336, and evenly introduce the source gas into the four second cover-side flow paths 12b in the cover 12.

[0064] The substrate processing apparatus 1 according to this embodiment is basically configured as described above, and its operation will be described below with reference to Fig. 5. Fig. 5 is a flow chart showing a process flow of the substrate processing method.

[0065] The substrate processing apparatus 1, under the control of the controller 90, transports the substrate W to the susceptor 21 disposed at a transport position in the processing vessel 10. Thereafter, the controller 90 raises the susceptor 21 to the processing position, and then performs a film forming method (substrate processing method) for forming a film on the substrate W.

[0066] In the substrate processing method, the controller 90 executes steps S1 to S5 shown in Fig. 5. First, the controller 90 executes a source gas supply step (step S1) of controlling the gas supply unit 30 to supply a source gas into the processing vessel 10. In the source gas supply step, the controller 90 adjusts the pressure inside the processing vessel 10 by discharging exhaust gas inside the processing vessel 10 using the gas exhaust unit 40. In the source gas supply step, the controller 90 also performs processes such as rotating the susceptor 21 using the substrate support unit 20 and adjusting the temperature of the processing vessel 10 and the temperature of the susceptor 21 to target temperatures. The exhaust control, rotation control, and temperature control are similarly performed in steps S2 and onward.

[0067] The controller 90 opens the valve 313 of the raw material gas supply unit 31 to allow the raw material gas from the raw material gas source 312 to flow into the raw material gas supply path 311, and causes the raw material gas to flow into the introduction structure 52 of the shower head 50 while adjusting the flow rate with the flow rate regulator 314. In the introduction structure 52, the raw material gas passes through the first flow path 84 while branching, and flows into the inside of the lid 12 (each of the first lid-side flow paths 12a).

[0068] 6(A) is an enlarged cross-sectional view showing the gas flow in the main structure 51 of the showerhead 50 in the source gas supplying step. As shown in FIG. 6(A), the source gas flows from each of the first lid-side flow paths 12a of the lid 12 into the supply holes 641 of each supply tube 64 of the main structure 51. Each supply tube 64 is in airtight contact with the lid 12 and is isolated from the second diffusion chamber 54, thereby preventing the source gas from leaking into the second diffusion chamber 54. Then, the source gas flows into the first diffusion chamber 53 formed between the diffusion chamber member 60 and the discharge member 70 through each supply hole 641.

[0069] In the first diffusion chamber 53, the raw material gas flows between the multiple passage tubes 68 and diffuses in the horizontal direction. When the raw material gas flows into each of the first passages 72 of the discharge member 70 communicating with the first diffusion chamber 53, the raw material gas is discharged into the processing space PS from each of the first discharge ports 71 of the discharge surface 70s through each of the first passages 72. The shower head 50 can discharge the raw material gas evenly from each of the first discharge ports 71 of the discharge surface 70s by circulating the raw material gas as described above. As a result, the raw material gas discharged into the processing space PS is supplied evenly to the entire surface of the substrate W arranged vertically below the shower head 50, and is adsorbed on the surface of the substrate W. The control device 90 performs the raw material gas supply step for a preset period and then ends the raw material gas supply step.

[0070] 5, the controller 90 then performs a reactive gas supply step (step S2) of controlling the gas supply unit 30 to supply a reactive gas into the processing vessel 10. The controller 90 opens the valve 323 of the reactive gas supply unit 32 to allow the reactive gas from the reactive gas source 322 to flow into the reactive gas supply path 321, and causes the reactive gas to flow into the introduction structure 52 of the shower head 50 while adjusting the flow rate with the flow rate regulator 324. In the introduction structure 52, the reactive gas passes through the second flow path 85 while branching, and flows into the inside of the lid 12 (each of the second lid-side flow paths 12b).

[0071] 6B is an enlarged cross-sectional view showing the gas flow in the main structure 51 of the showerhead 50 in the reactive gas supply step. As shown in FIG. 6B, the reactive gas flows from each second lid-side flow path 12b of the lid 12 into the second diffusion chamber 54 between the lid 12 and the diffusion chamber member 60. In the second diffusion chamber 54, the reactive gas flows between each supply cylinder 64, each heat transfer protrusion 65, and each fixing cylinder 66 and diffuses in the horizontal direction. Then, the reactive gas flows into each communication hole 622 that communicates with the second diffusion chamber 54.

[0072] The reaction gas that has flowed into each communication hole 622 passes through each passage tube 68 (each outlet tube 682) on the second diffusion chamber 54 side. Each outlet tube 682 is in airtight contact with the discharge member 70, and is therefore isolated from the first diffusion chamber 53, preventing the reaction gas from leaking into the first diffusion chamber 53. The reaction gas is discharged into the processing space PS from each second discharge port 73 of the discharge surface 70s through each second passage 74.

[0073] A part of the reactive gas diffused in the second diffusion chamber 54 also moves to the central supply chamber 55 through the horizontal holes 631 of the partition wall 63. The reactive gas that has moved to the central supply chamber 55 further flows into the central holes 621 and passes through the passage tubes 68 (central tubes 681) on the second diffusion chamber 54 side. The central tubes 681 are also in airtight contact with the discharge member 70, and are thus isolated from the first diffusion chamber 53, thereby preventing the reactive gas from leaking into the first diffusion chamber 53. The reactive gas is then discharged into the processing space PS from the third discharge ports 75 of the discharge surface 70s through the third paths 76.

[0074] In this manner, the shower head 50 discharges the reactive gas from each of the second outlets 73 and each of the third outlets 75 of the discharge surface 70s, thereby uniformly supplying the reactive gas to the entire surface of the substrate W disposed vertically below. This reactive gas reacts with the source gas adsorbed to the substrate W, thereby making it possible to appropriately modify the source gas. After performing the reactive gas supply step for a preset period, the control device 90 terminates this reactive gas supply step.

[0075] Returning to FIG. 5, after the reactive gas supply step, the controller 90 determines whether or not to terminate the substrate processing (step S3). For example, the controller 90 counts the number of substrate processing steps (source gas supply step and reactive gas supply step) and determines whether or not the substrate processing has been performed the number of times according to the recipe. If the substrate processing is to be continued (step S3: NO), the controller 90 returns to step S1 and repeats the same process thereafter. On the other hand, if the substrate processing is to be terminated (step S3: NO), the controller 90 proceeds to step S4.

[0076] In step S4, the controller 90 determines whether or not to perform a cleaning process inside the processing vessel 10. For example, the controller 90 holds in advance a substrate processing time threshold for performing the cleaning process, and determines to perform the cleaning process when the total period of the substrate processing reaches the time threshold. If the cleaning process is to be performed (step S4: YES), the controller 90 proceeds to step S5, whereas if the cleaning process is not to be performed (step S4: NO), the controller 90 skips step S5 and ends the process.

[0077] In the cleaning process of step S5, the controller 90 opens the valve 333 of the cleaning gas supply unit 33 to allow the cleaning gas from the cleaning gas source 332 to flow into the cleaning gas supply path 331, and then allows the cleaning gas to flow into the remote plasma device 335 while adjusting the flow rate with the flow rate regulator 334. The remote plasma device 335 generates plasma under the control of the controller 90 to convert the cleaning gas into radicals. The converted cleaning gas flows into the cover 12 via the introduction pipe 336 downstream of the remote plasma device 335, and flows into the central supply chamber 55 of the showerhead 50.

[0078] Fig. 7 is an enlarged cross-sectional view showing the gas flow in the main structure 51 during the cleaning process. As shown in Fig. 7, the cleaning gas that has flowed into the central supply chamber 55 moves vertically downward in the central supply chamber 55, flows into each central hole 621, and passes through each passing cylinder 68 (each central cylinder 681). Then, the cleaning gas is discharged into the processing space PS from each third discharge port 75 of the discharge surface 70s through each third passage 76.

[0079] The cleaning gas converted into radicals flows linearly through the shower head 50 and is discharged from the center of the discharge surface 70s. At this time, the central supply chamber 55, the central hole 621, and the third passage 76 greatly suppress deactivation of the cleaning gas radicals and guide the cleaning gas converted into radicals to the processing space PS. The cleaning gas converted into radicals diffuses radially from the center of the processing space PS. In the processing vessel 10, the residues of the source gas and the reactive gas are present in large amounts in the center, and by supplying the cleaning gas converted into radicals to the center, this portion can be effectively cleaned. In particular, each central hole 621 is formed with a larger diameter than each communication hole 622, so that the cleaning gas can be less likely to come into contact with the shower head 50 and cause deactivation of the radicals.

[0080] Furthermore, when the cleaning gas is supplied to the central supply chamber 55, the valve 323 of the reactive gas supply path 321 is closed, and the reactive gas stagnates in the second diffusion chamber 54, suppressing the inflow of the cleaning gas from each of the horizontal holes 631. Even if the cleaning gas flows into the second diffusion chamber 54, the amount of the cleaning gas is small, and the radicals are deactivated. In the cleaning process, the control device 90 may adjust the internal pressure of the second diffusion chamber 54 to be equal to or higher than the internal pressure of the central supply chamber 55 by supplying a purge gas or the like to the second diffusion chamber 54. This makes it possible to prevent the cleaning gas from flowing into the second diffusion chamber 54.

[0081] As described above, the substrate processing apparatus 1 can improve the thickness distribution of the film formed on the substrate W by uniformly supplying the source gas and the reactive gas. In addition, since the first diffusion chamber 53 and the second diffusion chamber 54 are separated in the substrate processing apparatus 1, it is possible to increase the momentum of the discharge of the source gas from the first diffusion chamber 53 and the discharge of the reactive gas from the second diffusion chamber 54, thereby preventing reverse diffusion and eliminating residues of the source gas and the reactive gas. Furthermore, the substrate processing apparatus 1 can supply the radicalized cleaning gas to the processing space PS with almost no deactivation, thereby shortening the cleaning time.

[0082] The substrate processing apparatus 1, the shower head 50, and the substrate processing method are not limited to the above-described embodiment, and various modifications are possible. For example, in the above-described embodiment, the source gas is supplied to the first diffusion chamber 53 while the reactive gas is supplied to the second diffusion chamber 54. However, the shower head 50 may supply the gas in the opposite direction. That is, the substrate processing apparatus 1 may supply the reactive gas to the first diffusion chamber 53 while supplying the source gas to the second diffusion chamber 54.

[0083] Also, for example, the showerhead 50 may have one large opening (third outlet 75) in the center of the outlet surface 70s, and the cleaning gas may be supplied from the central supply chamber 55 directly to this opening (without passing through multiple holes).

[0084] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0085] The showerhead 50 according to the first aspect of the present disclosure includes a structure (main structure 51), a first diffusion chamber 53 that extends inside the structure in a direction perpendicular to a thickness direction of the structure and diffuses a first gas (source gas), a second diffusion chamber 54 that is adjacent to the first diffusion chamber 53 in the thickness direction inside the structure and is provided independently of the first diffusion chamber 53 and diffuses a second gas (reaction gas), a plurality of tubular portions (outflow tubular portions 682) that are disposed in the first diffusion chamber 53 and have communication holes 622 on the inside that communicate with the second diffusion chamber 54, and a second diffusion chamber 54 that is provided on an outlet surface 70s of the structure and diffuses a second gas (reaction gas). The structure includes a plurality of first discharge ports 71 communicating with the first diffusion chamber 53 and discharging a first gas, a plurality of second discharge ports 73 provided at positions different from the first discharge ports 71 on the discharge surface 70s and communicating with the communication hole portions 622 of the plurality of cylindrical portions and discharging a second gas, a central supply chamber 55 provided separately from the first diffusion chamber 53 and the second diffusion chamber 54 in the central portion in the direction perpendicular to the thickness direction of the structure and circulating a radicalized third gas (cleaning gas), and one or more third discharge ports 75 provided in the central portion of the discharge surface 70s and communicating with the central supply chamber 55 and discharging the third gas.

[0086] As described above, the shower head 50 can smoothly discharge the radicalized third gas (cleaning gas) from the center, and can suppress deactivation of the radicals. This allows the shower head 50 to stably supply the radicalized third gas to the target. For example, when the radicalized third gas is used to perform a cleaning process in the processing vessel 10, the radicalized third gas can satisfactorily remove residues in the processing vessel 10, and the cleaning process can be performed efficiently.

[0087] Furthermore, the structure (main structure 51) has central supply chamber 55 disposed adjacent to second diffusion chamber 54, and has partition wall 63 separating second diffusion chamber 54 from central supply chamber 55. As a result, showerhead 50 has a structure in which first diffusion chamber 53, second diffusion chamber 54, and central supply chamber 55 are appropriately separated, and the second gas and third gas can be stably supplied.

[0088] Furthermore, the partition 63 has one or more horizontal holes 631 that communicate between the second diffusion chamber 54 and the central supply chamber 55. This allows the showerhead 50 to communicate between the second diffusion chamber 54 and the central supply chamber, and allows the second gas in the second diffusion chamber 54 to flow into the central supply chamber and be discharged from the third outlet 75. As a result, the in-plane uniformity of the substrate processing can be improved.

[0089] Furthermore, the central supply chamber 55 communicates with the central holes 621 of the multiple central cylinders 681 arranged in the first diffusion chamber 53, and the diameters of the central holes 621 of the multiple central cylinders 681 are larger than the diameters of the communication holes 622 of the multiple cylinders (the outflow cylinders 682). This enables the shower head 50 to suppress deactivation of the radicalized third gas in the central holes 621 and to discharge the radicalized third gas from the third outlet 75.

[0090] The structure (main structure 51) is formed by laminating a diffusion chamber member 60 fixed to a member (lid 12) through which the first gas, second gas, and third gas pass, and a discharge member 70 having a discharge surface 70s fixed to the diffusion chamber member 60. This makes it possible to easily form the first diffusion chamber 53, the second diffusion chamber 54, and the central supply chamber 55 inside the structure of the showerhead 50.

[0091] Moreover, the diffusion chamber member 60 has a first diffusion chamber recess 60a on one side that forms the first diffusion chamber 53, and a second diffusion chamber recess 60b on the other side that forms the second diffusion chamber 54. This allows the showerhead 50 to easily form each diffusion chamber by stacking the lid 12, the diffusion chamber member 60, and the discharge member 70.

[0092] The diffusion chamber member 60 has a first diffusion chamber recess 60a on the surface facing the discharge member 70, and a second diffusion chamber recess 60b on the surface facing the member (the cover 12) through which the first gas, the second gas, and the third gas pass. As a result, the showerhead 50 can be configured to have a first diffusion chamber 53 closer to the discharge member 70 and a second diffusion chamber 54 at a distant position, by assembling the diffusion chamber member 60 and the discharge member 70.

[0093] The diffusion chamber member 60 has a plurality of cylindrical portions (outflow cylindrical portions 682) in the first diffusion chamber recess 60a, while the second diffusion chamber recess 60b has a plurality of supply cylindrical portions 64 having supply holes 641 communicating with the first diffusion chamber 53 and supplying the first gas to the first diffusion chamber 53. This allows the showerhead 50 to smoothly supply the first gas to the first diffusion chamber 53, and also smoothly supply the second gas to the second diffusion chamber 54.

[0094] In addition, the structure (main structure 51) has a plurality of heat transfer protrusions 65 that transfer heat to the bottom 62 that separates the first diffusion chamber 53 and the second diffusion chamber 54. This makes it possible for the showerhead 50 to effectively adjust the temperature on the ejection surface 70s side, thereby improving the in-plane uniformity in, for example, substrate processing or cleaning processing.

[0095] A second aspect of the present disclosure is a substrate processing apparatus 1 including a processing vessel 10 for processing a substrate W, a gas supply unit 30 for supplying a plurality of types of gas to the processing vessel 10, and a shower head 50 connected to the gas supply unit 30 and capable of discharging each of the plurality of types of gas into the processing vessel 10, wherein the shower head 50 includes a structure (main structure 51), a first diffusion chamber 53 extending in a direction perpendicular to a thickness direction of the structure inside the structure and diffusing a first gas (source gas), a second diffusion chamber 54 adjacent to the first diffusion chamber 53 in the thickness direction inside the structure and provided independently of the first diffusion chamber 53, and diffusing a second gas (reaction gas), and a second diffusion chamber 55 disposed in the first diffusion chamber 53 and diffusing a second gas (reaction gas). 54, a plurality of first discharge ports 71 provided on the discharge surface 70s of the structure and communicating with the first diffusion chamber 53 to discharge the first gas, a plurality of second discharge ports 73 provided at positions different from the first discharge ports 71 on the discharge surface 70s and communicating with the communicating holes 622 of the plurality of cylindrical portions to discharge the second gas, a central supply chamber 55 provided separately from the first diffusion chamber 53 and the second diffusion chamber 54 in the center in the direction perpendicular to the thickness direction of the structure and for circulating a radicalized third gas (cleaning gas), and one or more third discharge ports 75 provided in the center of the discharge surface 70s and communicating with the central supply chamber 55 to discharge the third gas.

[0096] A third aspect of the present disclosure is a substrate processing method for a substrate processing apparatus 1 including a processing vessel 10 for processing a substrate W, a gas supply unit 30 for supplying a plurality of types of gas to the processing vessel 10, and a shower head 50 connected to the gas supply unit 30 and capable of discharging each of the plurality of types of gas into the processing vessel 10, the method including the steps of diffusing a first gas in a first diffusion chamber 53 extending in a direction perpendicular to a thickness direction of the structure inside a structure (main) of the shower head 50, and discharging the first gas from a plurality of first discharge ports 71 provided on a discharge surface 70s of the structure and communicating with the first diffusion chamber 53; The method includes the steps of diffusing the second gas in a second diffusion chamber 54 provided independently from the first diffusion chamber 53, and discharging the second gas from a plurality of second discharge ports 73 provided at positions different from the first discharge ports 71 on the discharge surface 70s and communicating with the communication holes 622 through communication holes 622 of a plurality of tubes (outflow tube portion 682) arranged in the first diffusion chamber 53, and circulating a radicalized third gas in a central supply chamber 55 provided separately from the first diffusion chamber 53 and the second diffusion chamber 54 in the center in the direction perpendicular to the thickness direction of the structure, and discharging the third gas from one or more third discharge ports 75 provided at the center of the discharge surface 70s and communicating with the central supply chamber 55. In these second and third aspects as well, deactivation of the radicalized third gas can be suppressed.

[0097] The shower head 50, the substrate processing apparatus 1, and the substrate processing method according to the presently disclosed embodiments are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The matters described in the above embodiments can be configured in other ways without any contradiction, and can be combined without any contradiction.

[0098] The substrate processing apparatus 1 of the present disclosure can be applied to any type of apparatus, including Chemical Vapor Deposition (CVD) apparatus, Atomic Layer Deposition (ALD) apparatus, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP). [Explanation of symbols]

[0099] 1. Substrate Processing Equipment 10 Processing vessel 30 Gas supply section 50 Shower Head 51 Main structure 53 First diffusion chamber 54 Second diffusion chamber 55 Central Supply Room 622 Communication hole 682 Outflow tube 70s discharge surface 71 1st discharge port 73 2nd outlet 75 Third discharge port W substrate

Claims

1. A structure, a first diffusion chamber that extends in a direction perpendicular to a thickness direction of the structure inside the structure and diffuses a first gas; a second diffusion chamber that is adjacent to the first diffusion chamber in the thickness direction inside the structure and is provided independently of the first diffusion chamber, and that diffuses a second gas; a plurality of tubular portions disposed in the first diffusion chamber and having communication holes formed therein and communicating with the second diffusion chamber; a plurality of first discharge ports provided on a discharge surface of the structure, the first discharge ports communicating with the first diffusion chamber and discharging the first gas; a plurality of second discharge ports provided at positions different from the first discharge ports on the discharge surface and communicating with communication holes of the plurality of cylindrical portions to discharge the second gas; a central supply chamber provided separately from the first diffusion chamber and the second diffusion chamber at a central portion of the structure in a direction perpendicular to the thickness direction, and through which a radicalized third gas flows; one or more third discharge ports provided in a central portion of the discharge surface and communicating with the central supply chamber to discharge the third gas; Shower head.

2. The structure has the central supply chamber disposed adjacent to the second diffusion chamber, and has a partition wall separating the second diffusion chamber from the central supply chamber.

10. The showerhead of claim 1.

3. The partition wall has one or more horizontal holes communicating the second diffusion chamber and the central supply chamber.

3. The showerhead of claim 2.

4. the central supply chamber communicates with central holes of a plurality of central cylinders arranged in the first diffusion chamber; The diameter of the central hole of each of the central cylindrical portions is larger than the diameter of the communication hole of each of the central cylindrical portions.

3. The showerhead of claim 2.

5. the structure is configured by laminating a diffusion chamber member fixed to a member through which the first gas, the second gas, and the third gas pass, and a discharge member fixed to the diffusion chamber member and having the discharge surface; The showerhead of claim 1 .

6. the diffusion chamber member has a first diffusion chamber recess on one surface thereof that forms the first diffusion chamber, and has a second diffusion chamber recess on the other surface thereof that forms the second diffusion chamber; 6. The showerhead of claim 5.

7. the diffusion chamber member has the first diffusion chamber recess on a surface facing the discharge member, and has the second diffusion chamber recess on a surface facing a member through which the first gas, the second gas, and the third gas pass; 7. The showerhead of claim 6.

8. the diffusion chamber member has the plurality of cylinder portions in the first diffusion chamber recess, and has a plurality of supply cylinder portions in the second diffusion chamber recess, the supply cylinder portions having supply holes communicating with the first diffusion chamber and supplying the first gas to the first diffusion chamber; 7. The showerhead of claim 6.

9. the structure has a plurality of heat transfer protrusions for transferring heat on a bottom portion separating the first diffusion chamber and the second diffusion chamber; The showerhead of claim 1 .

10. a processing vessel for processing a substrate; a gas supply unit for supplying a plurality of types of gases to the processing vessel; a shower head connected to the gas supply unit and capable of discharging each of the plurality of types of gases into the processing vessel, The shower head comprises: A structure, a first diffusion chamber that extends in a direction perpendicular to a thickness direction of the structure inside the structure and diffuses a first gas; a second diffusion chamber that is adjacent to the first diffusion chamber in the thickness direction inside the structure and is provided independently of the first diffusion chamber, and that diffuses a second gas; a plurality of tubular portions disposed in the first diffusion chamber and having communication holes formed therein and communicating with the second diffusion chamber; a plurality of first discharge ports provided on a discharge surface of the structure, the first discharge ports communicating with the first diffusion chamber and discharging the first gas; a plurality of second discharge ports provided at positions different from the first discharge ports on the discharge surface and communicating with communication holes of the plurality of cylindrical portions to discharge the second gas; a central supply chamber provided separately from the first diffusion chamber and the second diffusion chamber at a central portion of the structure in a direction perpendicular to the thickness direction, and through which a radicalized third gas flows; one or more third discharge ports provided in a central portion of the discharge surface and communicating with the central supply chamber to discharge the third gas; Substrate processing equipment.

11. a processing vessel for processing a substrate; a gas supply unit for supplying a plurality of types of gases to the processing vessel; a shower head connected to the gas supply unit and capable of discharging each of the plurality of types of gases into the processing vessel, diffusing a first gas in a first diffusion chamber extending in a direction perpendicular to a thickness direction of the shower head structure, and discharging the first gas from a plurality of first discharge ports provided on a discharge surface of the structure and communicating with the first diffusion chamber; a step of diffusing a second gas in a second diffusion chamber adjacent to the first diffusion chamber in the thickness direction inside the structure and provided independently of the first diffusion chamber, and discharging the second gas from a plurality of second discharge ports provided at positions different from the first discharge ports on the discharge surface and communicating with the communication holes through communication holes of a plurality of cylindrical portions arranged in the first diffusion chamber; a step of circulating a radicalized third gas in a central supply chamber provided separately from the first diffusion chamber and the second diffusion chamber in a central portion of the structure in a direction perpendicular to the thickness direction, and discharging the third gas from one or more third discharge ports provided in a central portion of the discharge surface and communicating with the central supply chamber, A method for processing a substrate.

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