Reflection device and manufacturing method for reflection device

Abstract

To provide a reflection device for improving the responsiveness of a liquid crystal layer, and a manufacturing method for the reflection device.SOLUTION: A reflection device includes a first structure 50 including a first electrode substrate 10 having a first surface 101 and a first wall part projecting from the first surface 101, a second structure 60 including a second electrode substrate 20 having a second surface 201 opposite to the first surface 101 and a second wall part projecting from the second surface 201, and a liquid crystal layer existing between the first surface 101 and the second surface 201. The first wall part and the second wall part section a space between the first surface 101 of the first electrode substrate 10 and the second surface 201 of the second electrode substrate 20 into a plurality of cells. A gap exists between a tip end of the first wall part 55 and the second surface 201. A gap exists between a tip end of the second wall part and the first surface 101.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure relate to a reflector device and a method for manufacturing a reflector device. [Background technology]

[0002] In wireless communication, a reflector that reflects radio waves is used. In recent years, development of a reflector that can change the reflection direction of radio waves to any direction has been progressing. In this application, such a reflector is also referred to as a reflection device. The reflection device includes a liquid crystal layer containing a liquid crystal material. When a bias voltage is applied to the liquid crystal layer, the molecular orientation in the liquid crystal layer changes. The reflection direction of the radio waves changes depending on the molecular orientation in the liquid crystal layer. The reflection direction of the radio waves is controlled by controlling the bias voltage applied to the liquid crystal layer.

[0003] In wireless communication, a phase shifter that modulates the phase of a signal by using a liquid crystal material is also known. Such a phase shifter is used, for example, in a phased array antenna. Patent Document 1 discloses a phase shifter that includes a microstrip line, a ground conductor layer, and a liquid crystal layer. Patent Document 1 also discloses a phased array antenna that includes the above phase shifter. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-101511 Summary of the Invention [Problem to be solved by the invention]

[0005] The thickness of the liquid crystal layer for controlling radio waves is greater than the thickness of the liquid crystal layer used in displays, etc. The greater the thickness, the lower the responsiveness of the liquid crystal layer.

[0006] An object of the embodiments of the present disclosure is to provide a reflecting device and a method for manufacturing a reflecting device that can effectively solve such problems. [Means for solving the problem]

[0007] The embodiments of the present disclosure relate to the following [1] to

[15] . [1] A reflecting device comprising: a first structure including a first electrode substrate including a first surface and a first back surface located opposite to the first surface, and a first wall portion protruding from the first surface along a normal direction of the first surface; a second electrode substrate including a second surface facing the first surface and a second back surface located on the opposite side of the second surface, and a second wall portion protruding from the second surface along a normal direction of the second surface; and a liquid crystal layer located between the first surface of the first structure and the second surface of the second structure; the first electrode substrate includes a first electrode located on the first surface and a first substrate supporting the first electrode; the second electrode substrate includes a second electrode located on the second surface and a second substrate supporting the second electrode; the first wall portion and the second wall portion divide a space between the first surface of the first electrode substrate and the second surface of the second electrode substrate into a plurality of cells; a gap is provided between the tip of the first wall and the second surface; A reflector, the reflector having a gap between the tip of the second wall and the first surface.

[0008] [2] In the reflection device described in [1], the first wall portion may include a plurality of first x wall portions extending in the x direction in a planar view, a first x slit located between two adjacent first x wall portions in the x direction, and a plurality of first y wall portions extending in a y direction intersecting the x direction in a planar view, and the second wall portion may include a plurality of second x wall portions extending in the x direction in a planar view, a second x slit located between two adjacent second x wall portions in the x direction, and a plurality of second y wall portions extending in the y direction in a planar view, and the first y wall portions may extend in the y direction so as to pass through at least one of the second x slits, and the second y wall portions may extend in the y direction so as to pass through at least one of the first x slits.

[0009] [3] In the reflection device described in [2], the first wall portion may include a 1x stopper that overlaps the 1x slit in a planar view and has a height smaller than a height of the 1x wall portion, and the 1x stopper may be in contact with an end of the 2y wall portion in a normal direction to the second surface, and the second wall portion may include a 2x stopper that overlaps the 2x slit in a planar view and has a height smaller than a height of the 2x wall portion, and the 2x stopper may be in contact with an end of the 1y wall portion in a normal direction to the first surface.

[0010] [4] In the reflection device described in [2] or [3], the 1y wall portion may extend in the y direction so as to pass through a plurality of the 2x slits, and the 2y wall portion may extend in the y direction so as to pass through a plurality of the 1x slits.

[0011] [5] In the reflection device described in any one of [2] to [4], a gap (G1x) in the x direction between the 2y wall portion located in the 1x slit and the 1x wall portion may be 1.0 μm or more.

[0012] [6] In the reflecting device according to [5], a ratio G1x / W2y of the gap (G1x) to a width (W2y) of the second y wall portion in the x direction may be greater than or equal to 0.1 and less than or equal to 1.0.

[0013] [7] In the reflection device according to any one of [2] to [6], a gap (G2x) in the x direction between the 1y wall portion located in the 2x slit and the 2x wall portion may be 1.0 μm or more.

[0014] [8] In the reflecting device according to [7], a ratio G2x / W1y of the gap (G2x) to a width (W1y) of the 1y wall portion in the x direction may be greater than or equal to 0.1 and less than or equal to 1.0.

[0015] [9] In the reflecting device according to any one of [1] to [8], a tip of the first wall portion in a normal direction to the first surface may have a curved or pointed shape.

[0016]

[10] The reflector according to any one of [1] to [9] may further include an alignment film located on a surface of the second wall portion.

[0017]

[11] A method for manufacturing a reflector, comprising: filling the second structure with a liquid crystal material; and combining the first structure with the second structure filled with the liquid crystal material, the first structure includes a first electrode substrate including a first surface and a first back surface located opposite to the first surface, and a first wall portion protruding from the first surface along a normal direction of the first surface; the second structure includes a second electrode substrate including a second surface and a second back surface located opposite to the second surface, and a second wall portion protruding from the second surface along a normal direction of the second surface, the first electrode substrate includes a first electrode located on the first surface and a first substrate supporting the first electrode; the second electrode substrate includes a second electrode located on the second surface and a second substrate supporting the second electrode; In the filling step, the liquid crystal material is filled into spaces partitioned by the second wall portions, After the combining step, the first wall portion is partitioned by a plurality of the second wall portions to further partition a space filled with the liquid crystal material, a gap is provided between the tip of the first wall and the second surface; A method for manufacturing a reflector, wherein there is a gap between the tip of the second wall portion and the first surface.

[0018]

[12] In the method for manufacturing a reflection device described in

[11] , the first wall portion may include a plurality of 1x wall portions extending in the x direction in a planar view, a 1x slit located between two adjacent 1x wall portions in the x direction, and a plurality of 1y wall portions extending in a y direction intersecting the x direction in a planar view, and the second wall portion may include a plurality of 2x wall portions extending in the x direction in a planar view, a 2x slit located between two adjacent 2x wall portions in the x direction, and a plurality of 2y wall portions extending in the y direction in a planar view, and in the combining step, the first structure may be combined with the second structure such that the 1y wall portions pass through at least one of the 2x slits and the 2y wall portions pass through at least one of the 1x slits.

[0019]

[13] In the method for manufacturing a reflection device described in

[12] , the first wall portion may include a 1x stopper that overlaps the 1x slit in a planar view and has a height smaller than a height of the 1x wall portion, and the 1x stopper may be in contact with an end of the 2y wall portion in a normal direction to the second surface, and the second wall portion may include a 2x stopper that overlaps the 2x slit in a planar view and has a height smaller than a height of the 2x wall portion, and the 2x stopper may be in contact with an end of the 1y wall portion in a normal direction to the first surface.

[0020]

[14] The method for manufacturing a reflection device described in any one of

[11] to

[13] may include a degassing process for removing any gap between the liquid crystal material filled in the second structure and the second wall portion.

[0021]

[15] The method for manufacturing a reflection device according to any one of

[11] to

[14] may include a step of forming an alignment film on a surface of the second wall portion of the second structure. Effect of the Invention

[0022] According to an embodiment of the present disclosure, the response of the liquid crystal layer can be improved. [Brief description of the drawings]

[0023] [Figure 1] FIG. 2 is a vertical cross-sectional view showing an example of a reflecting device. [Diagram 2] FIG. 2 is a perspective view showing an example of a wall structure. [Diagram 3] FIG. 2 is a perspective view showing an example of a first structure. [Figure 4] FIG. 4 is a perspective view showing an example of a second structure. [Diagram 5] FIG. 13 is a diagram showing an assembly process for assembling a first structure to a second structure. [Figure 6] FIG. 2 is a perspective view showing an example of a reflecting device. [Figure 7] FIG. 2 is a cross-sectional view showing an example of a wall structure. [Figure 8] 4 is a cross-sectional view showing an example of a first wall portion and a second wall portion. FIG. [Figure 9] 9 is a cross-sectional view showing the reflecting device taken along line IX-IX in FIG. 7. [Figure 10] 8 is a cross-sectional view showing the reflector taken along line XX in FIG. 7. [Figure 11] 10 is a cross-sectional view showing the reflecting device taken along line XI-XI in FIG. 7. [Figure 12] 8 is a cross-sectional view showing the reflecting device taken along line XII-XII in FIG. 7. [Figure 13A] 11 is a vertical cross-sectional view showing an example of a 2y wall portion. FIG. [Figure 13B] 11 is a vertical cross-sectional view showing an example of a 2y wall portion. FIG. [Figure 13C] 11 is a vertical cross-sectional view showing an example of a 2y wall portion. FIG. [Figure 14] FIG. 4 is a diagram illustrating a method for measuring the dimensions of a wall portion. [Figure 15A] FIG. 11 is a longitudinal cross-sectional view showing an example of a 1x wall portion. [Figure 15B] FIG. 11 is a longitudinal cross-sectional view showing an example of a 1x wall portion. [Figure 16] 5A to 5C are vertical cross-sectional views showing an example of a manufacturing process for the first structure. [Figure 17] 5A to 5C are vertical cross-sectional views showing an example of a manufacturing process for the first structure. [Figure 18] FIG. 4 is a vertical cross-sectional view showing a step of exposing the first layer. [Figure 19] FIG. 2 is a plan view showing an example of an exposure mask. [Figure 20] FIG. 2 is a vertical cross-sectional view showing a step of forming a 2-1 layer. [Figure 21] FIG. 11 is a vertical cross-sectional view showing a step of forming a 2-2 layer. [Figure 22] FIG. 4 is a vertical cross-sectional view showing a step of exposing a second layer. [Diagram 23] FIG. 2 is a plan view showing an example of an exposure mask. [Figure 24] FIG. 4 is a vertical cross-sectional view showing an example of a second structure. [Diagram 25] 5A to 5C are vertical cross-sectional views showing a step of forming an alignment film. [Figure 26] 10A to 10C are vertical cross-sectional views showing a step of filling the second structure with a liquid crystal material. [Figure 27] 10A to 10C are vertical cross-sectional views showing a process of combining a first structure with a second structure. [Figure 28] FIG. 13 is a plan view showing a wall structure in a comparative example. [Figure 29] 10A to 10C are vertical cross-sectional views showing an example of a manufacturing process for the second structure according to the first modified example. [Diagram 30] 10A to 10C are vertical cross-sectional views showing an example of a manufacturing process for the second structure according to the first modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] In this specification and drawings, unless otherwise specified, terms that refer to a material that serves as the basis of a certain configuration, such as "substrate," "base material," "plate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0025] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and the extent thereof, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions may be expected.

[0026] In this specification and drawings, unless otherwise specified, when a certain configuration such as a certain member or a certain region is described as being "on" or "under", "upper" or "lower" or "above" or "below" another configuration such as another member or another region, this includes the case where the certain configuration is in direct contact with the other configuration. It also includes the case where another configuration is included between a certain configuration and the other configuration, that is, where the configuration is indirectly in contact. Furthermore, unless otherwise specified, the words "on", "upper side", "upper", or "lower", "lower side", and "lower" may be used in the up-down direction.

[0027] In this specification and drawings, unless otherwise specified, the same or similar parts or parts having similar functions are denoted by the same or similar symbols, and repeated explanations may be omitted. In addition, the dimensional ratios of the drawings may differ from the actual ratios for the convenience of explanation, and some components may be omitted from the drawings.

[0028] In this specification and drawings, unless otherwise specified, the present invention may be combined with other embodiments or modified versions as long as no contradictions arise. In addition, other embodiments may be combined with each other, or other embodiments and modified versions may be combined as long as no contradictions arise. In addition, modified versions may be combined as long as no contradictions arise.

[0029] In this specification and drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. In addition, the order of the disclosed steps is arbitrary within the range that does not cause contradictions.

[0030] In this specification, when multiple upper limit candidates and multiple lower limit candidates are given for a certain parameter, the numerical range of the parameter may be formed by combining any one of the upper limit candidates and any one of the lower limit candidates. For example, consider a case where "parameter B is, for example, A1 or more, may be A2 or more, or may be A3 or more. Parameter B is, for example, A4 or less, may be A5 or less, or may be A6 or less." In this case, the numerical range of parameter B may be A1 or more and A4 or less, A1 or more and A5 or less, A1 or more and A6 or less, A2 or more and A4 or less, A2 or more and A5 or less, A2 or more and A6 or less, A3 or more and A4 or less, A3 or more and A5 or less, or A3 or more and A6 or less.

[0031] An embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of the present disclosure, and the present disclosure is not to be interpreted as being limited to only these embodiments.

[0032] In recent years, high-frequency radio waves such as microwaves, millimeter waves, and submillimeter waves have begun to be used in various fields. Microwaves are radio waves with a frequency band of approximately 0.3 GHz to 30 GHz. Millimeter waves are radio waves with a frequency band of approximately 30 GHz to 300 GHz. Submillimeter waves are radio waves with a frequency band of approximately 300 GHz to 3 THz. Examples of fields in which they are used include 5th generation mobile communication systems, mobile and automotive communication systems, radar for collision prevention systems, and medical biosensing.

[0033] The higher the frequency of radio waves, the more directional the radio waves tend to travel. Therefore, the higher the frequency of radio waves, the more areas the radio waves from base stations cannot reach directly. One way to solve this problem would be to increase the number of base stations or relay stations. However, this would cause problems with installation costs and securing installation locations.

[0034] By using a reflector, it is possible to make the radio waves reflected by the reflector reach areas where radio waves from a base station cannot reach directly. In particular, a reflecting device equipped with a liquid crystal layer can control the direction in which the radio waves are reflected. By using a reflecting device, it is possible to flexibly change the area that the radio waves reach. Such a reflecting device is also called an IRS (Intelligent Reflecting Surface).

[0035] 1 is a vertical cross-sectional view showing an example of a reflection device 100. The reflection device 100 includes a first electrode substrate 10, a second electrode substrate 20, and a liquid crystal layer 30. Reference character E1 represents a radio wave that has reached the first electrode substrate 10. Reference character E2 represents a radio wave that has been reflected by the first electrode substrate 10.

[0036] The first electrode substrate 10 includes a first front surface 101 and a first back surface 102, a plurality of first electrodes 12 located on the first front surface 101, and a first substrate 11 supporting the plurality of first electrodes 12. The first back surface 102 is located on the opposite side to the first front surface 101. The first back surface 102 may be formed by the first substrate 11.

[0037] The second electrode substrate 20 includes a second front surface 201 and a second rear surface 202, a second electrode 22 located on the second front surface 201, and a second substrate 21 supporting the second electrode 22. The second front surface 201 faces the first front surface 101 of the first electrode substrate 10 in the z direction Dz. The z direction Dz is the thickness direction of the reflection device 100. The second rear surface 202 is located on the opposite side to the second front surface 201. The second rear surface 202 may be formed by the second substrate 21.

[0038] The liquid crystal layer 30 is located between the first surface 101 of the first electrode substrate 10 and the second surface 201 of the second electrode substrate 20. The first electrode 12 of the first electrode substrate 10 and the second electrode 22 of the second electrode substrate 20 face each other in the z direction Dz so as to sandwich the liquid crystal layer 30 therebetween. One second electrode 22 may face a plurality of first electrodes 12. The second electrode 22 may be a common electrode. A common voltage is applied to the common electrode, and the potential of the common electrode is fixed. The common voltage is, for example, 0V.

[0039] When the voltage applied to the first electrode 12 changes, the orientation of the liquid crystal material contained in the liquid crystal layer 30 changes. When the orientation of the liquid crystal material changes, the dielectric constant of the liquid crystal layer changes. As a result, the effective dielectric constant of the portion near the first electrode 12 changes.

[0040] The voltages of the multiple first electrodes 12 can be controlled independently. By controlling the voltages of the multiple first electrodes 12, the phase of the reflected radio waves E2 can be controlled according to the position in the surface direction of the first electrode substrate 10. By changing the phase of the radio waves E2 according to the position in the surface direction of the first electrode substrate 10, the radiation pattern of the radio waves E2 reflected by the reflecting device 100 can be controlled. This makes it possible to control the direction of the radio waves E2.

[0041] The first substrate 11 and the second substrate 21 are made of an insulating material. The first substrate 11 and the second substrate 21 may be transparent or opaque to visible light. The first substrate 11 and the second substrate 21 include, for example, glass or non-alkali glass. The first substrate 11 and the second substrate 21 may be flexible. For example, the first substrate 11 and the second substrate 21 may include a resin film. Examples of materials for the resin film include polyethylene terephthalate (PET), polycarbonate, fluororesin, liquid crystal polymer (LCP), polyimide (PI), and cycloolefin polymer (COP).

[0042] The first electrode 12 and the second electrode 22 are made of a material having electrical conductivity. The first electrode 12 and the second electrode 22 may contain a metal. The metal is, for example, copper, gold, silver, aluminum, titanium, nickel, chromium, or an alloy thereof. The first electrode 12 and the second electrode 22 may contain a conductive oxide. The conductive oxide is, for example, ITO (indium tin oxide), IZO (indium zinc oxide), or the like.

[0043] The liquid crystal layer 30 is disposed between the first electrode substrate 10 and the second electrode substrate 20. The liquid crystal layer 30 contains a liquid crystal material. The liquid crystal material is, for example, a nematic liquid crystal. The nematic liquid crystal is, for example, a cyano-based liquid crystal, a fluorine-based liquid crystal, a biphenyl-based liquid crystal, a terphenyl-based liquid crystal, a tolan-based liquid crystal, or the like. The liquid crystal material may be a liquid crystal having a positive dielectric anisotropy, so-called Np liquid crystal.

[0044] The thickness T1 of the liquid crystal layer 30 is, for example, 20 μm or more, and may be 50 μm or more, 80 μm or more, or 100 μm or more. By increasing the thickness T1 of the liquid crystal layer 30, the phase modulation function of the liquid crystal layer 30 can be improved. The thickness T1 of the liquid crystal layer 30 is, for example, 1000 μm or less, and may be 500 μm or less, or 300 μm or less.

[0045] The reflection device 100 may include an alignment film 90. The alignment film 90 has a regulating force for aligning the liquid crystal material of the liquid crystal layer 30 in a certain direction. The alignment film 90 may be located on the surface of the wall 42, for example, as shown in FIG. 1 . For example, the alignment film 90 may be located on the wall surface 41. For example, the alignment film 90 may be located on the surface of the wall 42 facing the first surface 101. The alignment film 90 may be in contact with the liquid crystal layer 30.

[0046] The alignment film 90 may be a polymer film that has been subjected to a rubbing treatment. The polymer film is, for example, a polyimide film. The alignment film 90 may be a photo-alignment film. The photo-alignment film is obtained by aligning the molecules of a polymer surface by irradiating ultraviolet light. The alignment film 90 may be an obliquely evaporated film. The obliquely evaporated film is, for example, SiOx The alignment film 90 is a film. x is a numerical value of 1.00 or more and 2.00 or less. The thickness T2 of the alignment film 90 is, for example, 0.02 μm or more, may be 0.05 μm or more, or may be 0.08 μm or more. The thickness T2 of the alignment film 90 is, for example, 1.00 μm or less, may be 0.50 μm or less, or may be 0.20 μm or less.

[0047] The larger the thickness T1 of the liquid crystal layer 30, the smaller the influence of the regulating force from the alignment film 90 on the liquid crystal layer 30. Therefore, the larger the thickness T1 of the liquid crystal layer 30, the slower the responsiveness of the alignment of the liquid crystal material. The decrease in responsiveness is particularly noticeable when the bias voltage to the liquid crystal layer 30 is stopped. This is because the speed at which the alignment of the liquid crystal material changes when the bias voltage is stopped depends on elastic relaxation. For example, a conventional reflecting device requires 1 to 30 seconds for the alignment to change when the bias voltage is stopped.

[0048] In consideration of this problem, in this embodiment, it is proposed that the reflection device 100 includes a wall structure 40 as shown in Fig. 1. The wall structure 40 is located between the first surface 101 of the first electrode substrate 10 and the second surface 201 of the second electrode substrate 20. The wall structure 40 divides the liquid crystal layer 30 in a planar view. The planar view means that an object is viewed along the normal direction of the first surface 101 of the first electrode substrate 10.

[0049] 1, the wall structure 40 includes a plurality of wall portions 42 aligned along the planar direction of the first surface 101. The wall portions 42 include wall surfaces 41 facing the liquid crystal material of the liquid crystal layer 30. The wall surfaces 41 generate an alignment control force, which makes it easier to determine the alignment direction of the liquid crystal material. Therefore, even if the thickness T1 of the liquid crystal layer 30 is large, the responsiveness of the liquid crystal layer 30 can be ensured.

[0050] FIG. 2 is a perspective view showing an example of the wall structure 40. As shown in FIG. 2, the multiple walls 42 may include multiple x-walls 45 extending in the x-direction Dx and multiple y-walls 46 extending in the y-direction Dy so as to intersect with the multiple x-walls 45. Both the x-direction Dx and the y-direction Dy are parallel to the surface direction of the first surface 101. The y-direction Dy is a direction intersecting the x-direction Dx. The angle between the x-direction Dx and the y-direction Dy is, for example, 60° or more, may be 70° or more, or may be 80° or more. The angle between the x-direction Dx and the y-direction Dy is, for example, 120° or less, may be 110° or less, or may be 100° or less. The angle between the x-direction Dx and the y-direction Dy may be 90°. That is, the y-direction Dy may be a direction perpendicular to the x-direction Dx. The multiple x-walls 45 may be aligned in the y-direction Dy. The multiple y wall portions 46 may be aligned in the x direction Dx.

[0051] A plurality of spaces are partitioned by the wall portion 42 including a plurality of x-wall portions 45 and a plurality of y-wall portions 46. The spaces partitioned by the wall portion 42 are also referred to as cells 43. The plurality of cells 43 are aligned in the x-direction Dx and the y-direction Dy. The liquid crystal material of the liquid crystal layer 30 is located in each of the plurality of cells 43. The liquid crystal layer 30 located in the cell 43 is also referred to as an individual liquid crystal layer. By partitioning the liquid crystal layer 30 into a plurality of individual liquid crystal layers by the wall structure 40, the response of the liquid crystal material is improved.

[0052] On the other hand, if the liquid crystal layer 30 is divided into a plurality of individual liquid crystal layers, problems may occur in the manufacturing process of the reflector 100. In the manufacturing process of a display, the substrate is placed in an enclosed space, and the air around the substrate is discharged to the outside, after which liquid crystal material is supplied onto the substrate. The liquid crystal material is filled onto the substrate by capillary action. Then, a degassing process is performed to remove any gaps between the substrate and the liquid crystal material.

[0053] On the other hand, if the liquid crystal material cannot move between two adjacent cells 43, it is not possible to employ a method of filling the liquid crystal material using the capillary phenomenon. In this case, the liquid crystal material is filled into each cell 43 by dripping the liquid crystal material from above toward the wall structure 40. Then, a degassing process is performed. However, the gas discharge path in the degassing process is limited to the upper opening of each cell 43. This may result in a longer time required for the degassing process, which may reduce the productivity of the reflection device 100.

[0054] In consideration of this problem, in this embodiment, it is proposed to configure a wall structure 40 by combining a first wall portion located on the first electrode substrate 10 and a second wall portion located on the second electrode substrate 20. A structure including the first electrode substrate 10 and the first wall portion located on the first electrode substrate 10 is also referred to as a first structure. A structure including the second electrode substrate 20 and the second wall portion located on the second electrode substrate 20 is also referred to as a second structure.

[0055] The first and second structures will be described.

[0056] 3 is a perspective view showing an example of the first structure 50. The first structure 50 includes a first electrode substrate 10 and a first wall portion 51 protruding from the first surface 101 of the first electrode substrate 10 along a normal direction of the first surface 101. The first wall portion 51 may overlap the first electrode 12 of the first electrode substrate 10, or may not overlap the first electrode 12. One first wall portion 51 may include a portion overlapping the first electrode 12 and a portion not overlapping the first electrode 12. In this case, the surface of the first wall portion 51 facing the first surface 101 may include a step due to the thickness of the first electrode 12.

[0057] The first wall portion 51 includes a plurality of 1x wall portions 55 and a plurality of 1y wall portions 56. The 1x wall portion 55 extends in the x direction Dx in a plan view. The plurality of 1x wall portions 55 are arranged in the x direction Dx. Although not shown, the first wall portion 51 may include a row of a plurality of 1x wall portions 55 arranged in the y direction Dy in addition to the row of a plurality of 1x wall portions 55 arranged in the x direction Dx. That is, the plurality of 1x wall portions 55 may be arranged in the y direction Dy. The 1y wall portion 56 extends in the y direction in a plan view. The plurality of 1y wall portions 56 may be arranged in the x direction Dx. The 1x wall portion 55 and the 1y wall portion 56 may be connected. In other words, the 1x wall portion 55 and the 1y wall portion 56 may be configured as an integral member.

[0058] 3, the multiple 1x wall portions 55 are arranged at intervals in the x direction. A space between two adjacent 1x wall portions 55 in the x direction Dx is also referred to as a 1x slit 551. The 1x slit 551 is located between two adjacent 1y wall portions 56 in the x direction Dx. For example, a virtual middle line passing through the middle between two adjacent 1y wall portions 56 in the x direction Dx may overlap with the 1x slit 551 in a plan view.

[0059] The 1x wall portion 55 has a height H1x and a width W1x. The height H1x is the distance in the z direction Dz from the first surface 101 to the first tip 52 of the 1x wall portion 55. The width W1x is the dimension of the 1x wall portion 55 in the y direction Dy.

[0060] The 1y wall portion 56 has a height H1y and a width W1y. The height H1y is the distance in the z-direction Dz from the first surface 101 to the first tip 52 of the 1y wall portion 56. The height H1y of the 1y wall portion 56 may be the same as the height H1x of the 1x wall portion 55. The width W1y is the dimension of the 1y wall portion 56 in the x-direction Dx.

[0061] 4 is a perspective view showing an example of the second structure 60. The second structure 60 includes a second electrode substrate 20 and a second wall portion 61 protruding from the second surface 201 of the second electrode substrate 20 along the normal direction of the second surface 201. The second wall portion 61 may overlap the second electrode 22 of the second electrode substrate 20, or may not overlap the second electrode 22. One second wall portion 61 may include a portion overlapping the second electrode 22 and a portion not overlapping the second electrode 22. In this case, the surface of the second wall portion 61 facing the second surface 201 may include a step due to the thickness of the second electrode 22.

[0062] The second wall portion 61 includes a plurality of 2x wall portions 65 and a plurality of 2y wall portions 66. The 2x wall portion 65 extends in the x-direction Dx in a plan view. The plurality of 2x wall portions 65 are arranged in the x-direction Dx. As shown in FIG. 4, the second wall portion 61 may include a row of a plurality of 2x wall portions 65 arranged in the y-direction Dy in addition to the row of a plurality of 2x wall portions 65 arranged in the x-direction Dx. That is, the plurality of 2x wall portions 65 may be arranged in the y-direction Dy. The 2y wall portion 66 extends in the y-direction in a plan view. The plurality of 2y wall portions 66 may be arranged in the x-direction Dx. The 2x wall portion 65 and the 2y wall portion 66 may be connected. In other words, the 2x wall portion 65 and the 2y wall portion 66 may be configured as an integral member.

[0063] 4, the multiple second x wall portions 65 are arranged at intervals in the x direction. A space between two adjacent second x wall portions 65 in the x direction Dx is also referred to as a second x slit 651. The second x slit 651 is located between two adjacent second y wall portions 66 in the x direction Dx. For example, a virtual middle line passing through the middle between two adjacent second y wall portions 66 in the x direction Dx may overlap with the second x slit 651 in a plan view.

[0064] The second x-wall 65 has a height H2x and a width W2x. The height H2x is the distance in the z-direction Dz from the second surface 201 to the second tip 62 of the second x-wall 65. The width W2x is the dimension of the second x-wall 65 in the y-direction Dy.

[0065] The second y-wall portion 66 has a height H2y and a width W2y. The height H2y is the distance in the z-direction Dz from the second surface 201 to the second tip 62 of the second y-wall portion 66. The width W2y is the dimension of the second y-wall portion 66 in the x-direction Dx.

[0066] The wall structure 40 is formed by combining the first structure 50 with the second structure 60 so that the first surface 101 of the first electrode substrate 10 and the second back surface 202 of the second electrode substrate 20 face each other. FIG. 5 is a diagram showing a process of combining the first structure 50 with the second structure 60. In the combining process, the 1y wall portion 56 is inserted into the 2x slit 651 of the 2x wall portion 65, and the 2y wall portion 66 is inserted into the 1x slit 551 of the 1x wall portion 55. In a state in which the first structure 50 and the second structure 60 are combined, the 1y wall portion 56 passes through at least one 2x slit 651, and the 2y wall portion 66 passes through at least one 1x slit 551. The 1y wall portion 56 may extend in the y direction Dy so as to pass through a plurality of 2x slits 651. The second y-wall portion 66 may extend in the y-direction Dy so as to pass through the multiple first x-slits 551.

[0067] Fig. 6 is a perspective view showing an example of a reflecting device 100 obtained by combining a first structure 50 with a second structure 60. In Fig. 6, the first electrode substrate 10 is drawn with a dotted line in order to visualize the structure of the wall structure 40.

[0068] The first wall portion 51 and the second wall portion 61 divide the space between the first surface 101 of the first electrode substrate 10 and the second surface 201 of the second electrode substrate 20 into a plurality of cells 43. The wall surfaces of the first wall portion 51 and the second wall portion 61 exert an alignment regulating force on the liquid crystal material, making it easier to determine the alignment direction of the liquid crystal material.

[0069] 7 is a cross-sectional view showing an example of the wall structure 40. The 1x wall portion 55 may be located between two adjacent 2x wall portions 65 in the y direction Dy. Although not shown, the 2x wall portion 65 may be located between two adjacent 1x wall portions 55 in the y direction Dy. The 1x wall portions 55 and the 2x wall portions 65 may be arranged alternately along the y direction Dy.

[0070] The 1y wall portion 56 may be located between two adjacent 2y wall portions 66 in the x-direction Dx. The 2y wall portion 66 may be located between two adjacent 1y wall portions 56 in the x-direction Dx. As shown in Fig. 7, the 1y wall portions 56 and the 2y wall portions 66 may be arranged alternately along the x-direction Dx.

[0071] One cell 43 may be surrounded by the first wall portion 51 and the second wall portion 61. For example, one cell 43 may be surrounded by one 1x-th wall portion 55, one 1y-th wall portion 56, one 2x-th wall portion 65, and one 2y-th wall portion 66.

[0072] The cell 43 has a dimension Lx in the x-direction Dx and a dimension Ly in the y-direction Dy. The dimensions Lx and Ly are, for example, 20 μm or more, may be 50 μm or more, or may be 100 μm or more. The dimensions Lx and Ly are, for example, 1000 μm or less, may be 500 μm or less, or may be 250 μm or less.

[0073] The dimension Ly may be equal to or greater than the dimension Lx. The dimension Lx is approximately half the interval L2x between two adjacent second y-wall portions 66 in the x-direction Dx. The dimension Ly is approximately half the interval L2y between two adjacent second x-wall portions 65 in the y-direction Dy. The larger the dimension Ly is, the larger the interval L2y is. The interval L2y may be equal to or greater than the interval L2x.

[0074] As described later, the liquid crystal material is filled into the second structure 60. In the filling process, the liquid crystal material moves in the y direction Dy along the second surface 201 through the space between two adjacent 2y walls 66 in the x direction Dx. That is, the space between two adjacent 2y walls 66 constitutes a flow path of the liquid crystal material. In the flow path between two adjacent 2y walls 66, 2x walls 65 are periodically provided along the y direction Dy. The liquid crystal material passes through the 2x slits 651 of the 2x walls 65. The larger the interval L2y, the less likely the flow of the liquid crystal material is obstructed by the 2x walls 65.

[0075] On the other hand, the larger the interval L2y, the larger the dimension Ly and the larger the area of ​​the cell 43. The larger the area of ​​the cell 43, the less the regulating force acts on the liquid crystal material. By increasing the dimension Ly and decreasing the dimension Lx, it is possible to prevent the area of ​​the cell 43 from increasing while increasing the efficiency of the filling process.

[0076] The ratio of the dimension Ly to the dimension Lx, Ly / Lx, is, for example, 1.0 or more, and may be 1.5 or more, 2.0 or more, 3.0 or more, or 5.0 or more. Ly / Lx is, for example, 25.0 or less, 20.0 or less, 15.0 or less, or 10.0 or less.

[0077] The ratio of the distance L2y to the distance L2x, L2y / L2x, is, for example, 1.0 or more, may be 1.5 or more, may be 2.0 or more, may be 3.0 or more, or may be 5.0 or more. L2y / L2x is, for example, 25.0 or less, may be 20.0 or less, may be 15.0 or less, or may be 10.0 or less.

[0078] From the viewpoint of increasing the regulating force acting on the liquid crystal material filled in the second structure 60, it is preferable that the interval L2y is small. For example, the interval L2y may be smaller than the interval L2x. L2y / L2x, which is the ratio of the interval L2y to the interval L2x, is, for example, less than 1.0, may be 0.9 or less, may be 0.8 or less, or may be 0.7 or less. L2y / L2x is, for example, 0.1 or more, may be 0.2 or more, or may be 0.3 or more.

[0079] The smaller the interval L2y, the smaller the dimension Ly. For example, the dimension Ly may be smaller than the dimension Lx. The ratio of the dimension Ly to the dimension Lx, Ly / Lx, is, for example, less than 1.0, may be 0.9 or less, may be 0.8 or less, or may be 0.7 or less. Ly / Lx is, for example, 0.1 or more, may be 0.2 or more, or may be 0.3 or more.

[0080] The liquid crystal layer 30 is divided into a plurality of portions by the cells 43 of the wall structure 40. In the present embodiment, it is proposed to configure the wall structure 40 so that the liquid crystal material of the liquid crystal layer 30 can move between two adjacent cells 43. Specifically, it is proposed that the wall structure 40 includes a gap through which the liquid crystal material can move. The gap may be formed in the surface direction of the reflecting device 100, i.e., in the x-direction Dx or the y-direction Dy. The gap may be formed in the thickness direction of the reflecting device 100, i.e., in the z-direction Dz. The gap means a gap through which the liquid crystal material of the liquid crystal layer 30 can move.

[0081] The gap in the planar direction of the reflecting device 100 will be described.

[0082] Fig. 8 is a cross-sectional view showing an example of the first wall portion 51 and the second wall portion 61. In Fig. 8, the liquid crystal layer 30 is omitted.

[0083] 8, there may be a gap G1x in the x-direction Dx between the 2y wall portion 66 located in the 1x slit 551 and the side surface 553 of the 1x wall portion 55. In other words, the width W2y of the 2y wall portion 66 may be smaller than the dimension S1x of the 1x slit 551 in the x-direction Dx.

[0084] The function of the gap G1x will be described. The liquid crystal material of the liquid crystal layer 30 has fluidity. The liquid crystal material can move through the gap G1x between two cells 43 adjacent to each other in the y direction Dy. For example, assume that the volume or pressure of the liquid crystal material located in the first cell 43 is greater than the volume or pressure of the liquid crystal material located in the second cell 43 adjacent to the first cell 43. In this case, the liquid crystal material can move from the first cell 43 to the second cell 43 through the gap G1x. Therefore, it is possible to suppress the occurrence of a difference in the volume or pressure of the liquid crystal material in each cell 43.

[0085] The gap G1x is, for example, 1.0 μm or more, may be 1.5 μm or more, or may be 2.0 μm or more. The gap G1x is, for example, 20.0 μm or less, may be 15.0 μm or less, or may be 10.0 μm or less.

[0086] G1x / W2y, which is the ratio of the gap G1x to the width W2y of the 2y wall portion 66, is, for example, 0.1 or more, may be 0.2 or more, or may be 0.3 or more. When G1x / W2y is 0.1 or more, the liquid crystal material can move through the gap G1x. Also, when G1x / W2y is 0.1 or more, the accuracy of the alignment of the 1x slit 551 with respect to the 2y wall portion 66 is relaxed. G1x / W2y is, for example, 1.0 or less, may be 0.8 or less, or may be 0.6 or less. When G1x / W2y is 1.0 or less, interference between the liquid crystal materials located in two adjacent cells 43 can be suppressed. For example, the orientation of the liquid crystal material located in the first cell 43 can be suppressed from being influenced by the orientation of the liquid crystal material located in the second cell 43.

[0087] 8, there may be a gap G2x in the x-direction Dx between the first y-wall portion 56 located in the second x-slit 651 and the side surface 653 of the second x-wall portion 65. In other words, the width W1y of the first y-wall portion 56 may be smaller than the dimension S2x of the second x-slit 651 in the x-direction Dx. The liquid crystal material can move through the gap G2x between two cells 43 adjacent to each other in the y-direction Dy. This makes it possible to suppress the occurrence of a difference in the volume or pressure of the liquid crystal material in each cell 43.

[0088] The numerical range of the gap G2x may be the same as the above-mentioned numerical range of the gap G1x. The numerical range of G2x / W1y, which is the ratio of the gap G2x to the width W1y of the 1y wall portion 56, may be the same as the above-mentioned numerical range of G1x / W2y.

[0089] The gap in the thickness direction of the reflecting device 100 will be described.

[0090] The first structure 50 and the second structure 60 are combined such that a gap is generated between the tip of the first wall portion 51 of the first structure 50 and the second surface 201 of the second electrode substrate 20. For example, as shown in Fig. 6, a gap Gz1y is generated between the tip of the 1y wall portion 56 of the first structure 50 and the second surface 201 of the second electrode substrate 20. Similarly, a gap is generated between the tip of the second wall portion 61 of the second structure 60 and the first surface 101 of the first electrode substrate 10.

[0091] 9 is a cross-sectional view showing the reflecting device seen along line IX-IX in FIG. 7. The first wall portion 51 may include a plurality of 1x stoppers 552 in addition to a plurality of 1x wall portions 55 and a plurality of 1x slits 551 arranged in the x direction Dx. The 1x stoppers 552 protrude from the first surface 101 along the normal direction of the first surface 101 at a position overlapping with the 1x slits 551 in a plan view. The 1x stoppers 552 are in direct or indirect contact with the second tip 62 of the second y wall portion 66 in the z direction Dz. "Indirect contact" means that a thin member such as an alignment film 90 is provided between the second tip 62 and the 1x stoppers 552.

[0092] The height H12 of the 1x stopper 552 is smaller than the height H1x of the 1x wall portion 55. The height H12 of the 1x stopper 552 may be smaller than the dimension H11 of the 1x slit 551 in the z direction Dz.

[0093] Fig. 10 is a cross-sectional view showing the reflecting device taken along line IX-IX in Fig. 7. Since the second end 62 of the second y wall portion 66 contacts the first x stopper 552, a gap Gz2y is generated between the second end 62 and the first surface 101 in the z direction Dz. Therefore, the liquid crystal material of the liquid crystal layer 30 can move through the gap Gz2y between two cells 43 adjacent to each other in the x direction Dx. Therefore, it is possible to suppress the occurrence of a difference in the volume or pressure of the liquid crystal material in each cell 43.

[0094] The dimension of the first x stopper 552 in the z direction Dz, i.e., the dimension of the gap Gz2y, is, for example, 1.0 μm or more, may be 1.5 μm or more, or may be 2.0 μm or more. The dimension of the gap Gz2y is, for example, 20.0 μm or less, may be 15.0 μm or less, or may be 10.0 μm or less.

[0095] The dimension of the gap Gz2y may be determined relative to the height H1x of the 1x-th wall portion 55. The ratio Gz2y / H1x of the gap Gz2y to the height H1x is, for example, 0.02 or more, or may be 0.05 or more, or may be 0.10 or more. Gz2y / H1x is, for example, 0.30 or less, or may be 0.20 or less, or may be 0.15 or less.

[0096] Fig. 11 is a cross-sectional view showing the reflecting device as seen along line XI-XI in Fig. 7. The second wall portion 61 may include a plurality of 2x stoppers 652 in addition to a plurality of 2x wall portions 65 and a plurality of 2x slits 651 aligned in the x-direction Dx. The 2x stoppers 652 protrude from the second surface 201 along the normal direction of the second surface 201 at a position overlapping with the 2x slits 651 in a plan view. The 2x stoppers 652 are in direct or indirect contact with the first tip 52 of the 1y wall portion 56 in the z-direction Dz.

[0097] The height H22 of the second x stopper 652 is smaller than the height H2x of the second x wall portion 65. The height H22 of the second x stopper 652 may be smaller than the dimension H21 of the second x slit 651 in the z direction Dz.

[0098] 12 is a cross-sectional view showing the reflector taken along line XII-XII in FIG. 7. Since the first end 52 of the 1y wall portion 56 is in contact with the second x stopper 652, a gap Gz1y is generated between the first end 52 and the second surface 201 in the z-direction Dz. Therefore, the liquid crystal material of the liquid crystal layer 30 can move through the gap Gz1y between two cells 43 adjacent to each other in the x-direction Dx. Therefore, it is possible to suppress the occurrence of a difference in the volume or pressure of the liquid crystal material in each cell 43.

[0099] The dimension of the second x-stopper 652 in the z-direction Dz, i.e., the dimension of the gap Gz1y, is, for example, 1.0 μm or more, may be 1.5 μm or more, or may be 2.0 μm or more. The dimension of the gap Gz1y is, for example, 20.0 μm or less, may be 15.0 μm or less, or may be 10.0 μm or less.

[0100] The dimension of the gap Gz1y may be determined relative to the height H2x of the 2x-th wall portion 65. The ratio Gz1y / H2x of the gap Gz1y to the height H2x is, for example, 0.02 or more, or may be 0.05 or more, or may be 0.10 or more. Gz1y / H2x is, for example, 0.30 or less, or may be 0.20 or less, or may be 0.15 or less.

[0101] 9, when the height H1x of the 1x wall portion 55 is smaller than the distance between the first surface 101 and the second surface 201, a gap Gz1x is also generated in the z direction Dz between the first end 52 of the 1x wall portion 55 and the second surface 201. Therefore, the liquid crystal material of the liquid crystal layer 30 can move through the gap Gz1x between two cells 43 adjacent to each other in the y direction Dy. Therefore, it is possible to suppress the occurrence of a difference in the volume or pressure of the liquid crystal material in each cell 43. The numerical range of the dimension of the gap Gz1x may be the same as the above-mentioned numerical range of the gap Gz1y.

[0102] 11, when the height H2x of the second x-wall portion 65 is smaller than the distance between the first surface 101 and the second surface 201, a gap Gz2x is also generated in the z-direction Dz between the second end 62 of the second x-wall portion 65 and the first surface 101. Therefore, the liquid crystal material of the liquid crystal layer 30 can move through the gap Gz2x between two cells 43 adjacent to each other in the y-direction Dy. Therefore, it is possible to suppress the occurrence of a difference in the volume or pressure of the liquid crystal material in each cell 43. The numerical range of the dimension of the gap Gz2x may be the same as the above-mentioned numerical range of the gap Gz2y.

[0103] A method for measuring the dimensions of the first wall portion 51 and the second wall portion 61 will be described.

[0104] The width W2y of the 2y wall portion 66 is measured at a position where the width of the 2y wall portion 66 is maximum in a vertical cross-sectional view of the 2y wall portion 66. Examples of the shape of the 2y wall portion 66 in a vertical cross-sectional view will be described with reference to Figures 13A to 13C.

[0105] Fig. 13A is a vertical cross-sectional view showing an example of the shape of the 1x wall portion 55 and the 2y wall portion 66 when viewed along the line XIII-XIII in Fig. 8. As shown in Fig. 13A, the 2y wall portion 66 may include a portion whose width decreases from the second surface 201 toward the second tip 62. The 2y wall portion 66 may have a maximum width at the second surface 201. In this case, the width of the 2y wall portion 66 at the second surface 201 is measured as the width W2y.

[0106] Fig. 13B is a longitudinal sectional view showing an example of the shape of the 1x wall portion 55 and the 2y wall portion 66 when viewed along the line XIII-XIII in Fig. 8. As shown in Fig. 13B, the 2y wall portion 66 may include a portion whose width increases from the second surface 201 toward the second tip 62. The 2y wall portion 66 may have a maximum width at the second tip 62. In this case, the width of the 2y wall portion 66 at the second tip 62 is measured as the width W2y.

[0107] 13C is a longitudinal sectional view showing an example of the shape of the 1x wall portion 55 and the 2y wall portion 66 when viewed along the line XIII-XIII in FIG. 8. As shown in FIG. 13C, the 2y wall portion 66 may include a portion whose width increases from the second surface 201 toward the second tip 62, and a portion whose width decreases from the second surface 201 toward the second tip 62. In this case, the 2y wall portion 66 has a maximum width at a position different from the second surface 201 and different from the second tip 62. For example, the 2y wall portion 66 has a maximum width at a position where the distance Hw from the second surface 201 in the z direction Dz is 0.4×H2y or more and 0.6×H2y or less. In this case, the maximum width is measured as the width W2y.

[0108] Although not shown, the width W1x of the 1x wall portion 55 is also measured at a position where the width of the 1x wall portion 55 is maximum in a vertical cross-sectional view of the 1x wall portion 55. Although not shown, the width W1y of the 1y wall portion 56 is also measured at a position where the width of the 1y wall portion 56 is maximum in a vertical cross-sectional view of the 1y wall portion 56. Although not shown, the width W2x of the 2x wall portion 65 is also measured at a position where the width of the 2x wall portion 65 is maximum in a vertical cross-sectional view of the 2x wall portion 65.

[0109] The heights H1x, H1y, H2x, and H2y are measured at the same positions as the widths W1x, W1y, W2x, and W2y.

[0110] The width W1x, the width W1y, the width W2x, and the width W2y are, for example, 1.0 μm or more, may be 3.0 μm or more, or may be 5.0 μm or more. The width W1x, the width W1y, the width W2x, and the width W2y are, for example, 100 μm or less, may be 50 μm or less, or may be 25 μm or less.

[0111] The width W2y of the 2y wall portion 66 may be larger than the width W1y of the 1y wall portion 56. As described later, the liquid crystal material is filled into the second structure 60. In the filling process, the 2y wall portion 66 receives pressure from the flowing liquid crystal material. The 2y wall portion 66 also receives force from the alignment film 90. The larger the width W2y, the more the 2y wall portion 66 can be prevented from being deformed by these forces. On the other hand, the larger the width W2y, the less the amount of liquid crystal material filled into the second structure 60. By increasing the width W2y and decreasing the width W1y, the amount of liquid crystal material in the liquid crystal layer 30 included in the reflection device 100 can be appropriately maintained.

[0112] The ratio W2y / W1y of the width W2y to the width W1y is, for example, 1.1 or more, may be 1.3 or more, or may be 1.5 or more. W2y / W1y is, for example, 3.0 or less, may be 2.5 or less, or may be 2.0 or less.

[0113] The width W2x may be greater than the width W1x. The ratio of the width W2x to the width W1x, that is, W2x / W1x, may have the same numerical range as the above-mentioned numerical range of W2y / W1y.

[0114] The 1x wall portion 55 has a first aspect ratio. The first aspect ratio is a ratio of a height H1x of the 1x wall portion 55 to a width W1x of the 1x wall portion 55. The first aspect ratio is, for example, 1.0 or more, and may be 2.0 or more, or may be 3.0 or more. The first aspect ratio is, for example, 10.0 or less, and may be 8.0 or less, or may be 5.0 or less.

[0115] The 1y wall portion 56 has a second aspect ratio. The second aspect ratio is the ratio of the height H1y of the 1y wall portion 56 to the width W1y of the 1y wall portion 56. The numerical range of the second aspect ratio may be the same as the numerical range of the first aspect ratio described above.

[0116] The 2x wall 65 has a third aspect ratio. The third aspect ratio is the ratio of the height H2x of the 2x wall 65 to the width W2x of the 2x wall 65. The numerical range of the third aspect ratio may be the same as the above-mentioned numerical range of the first aspect ratio.

[0117] The 2y wall portion 66 has a fourth aspect ratio. The fourth aspect ratio is the ratio of the height H2y of the 2y wall portion 66 to the width W2y of the 2y wall portion 66. The numerical range of the fourth aspect ratio may be the same as the numerical range of the first aspect ratio described above.

[0118] A method for calculating values ​​such as width W2y and height H2y will be described. These values ​​are calculated by averaging the measured values ​​in nine areas as shown in FIG. 14. For example, width W2y is calculated by averaging the measured values ​​of width W2y in the first area A1 to the ninth area A9. The first area A1 to the ninth area A9 are obtained by virtually dividing the wall structure 40 into thirds in the x-direction Dx and the y-direction Dy, respectively. Measurements in each area are performed in the portion closest to the center point C of each area. For example, in the first area A1, width W2y is measured in the portion of the 2y wall portion 66 closest to the center point C.

[0119] Measurements of width, height, etc. are made based on cross-sectional images taken by an electron microscope.

[0120] As shown in FIGS. 13A to 13C, the reflecting device 100 may include an alignment film 90 located on a surface of a second wall portion 61, such as the 2y wall portion 66. The alignment film 90 may be located on a side surface of the second wall portion 61. The alignment film 90 may be located at a second tip 62 of the second wall portion 61. The alignment film 90 may be a vertical alignment film. The alignment film 90 does not have to be provided on a surface of the first wall portion 51 of the first structure 50.

[0121] As described below, in an assembling step of assembling the first structure 50 with the second structure 60, the first wall portion 51 is inserted into the liquid crystal layer 30. The first wall portion 51 may have a shape that can suppress the occurrence of a gap between the first tip 52 and the liquid crystal material or the second surface 201 during the assembling step. Examples of the shape of the first wall portion 51 in a longitudinal cross section will be described with reference to Figs. 15A to 15B.

[0122] Fig. 15A is a longitudinal sectional view showing an example of the shape of the 1x wall portion 55 when viewed along the line XV-XV in Fig. 7. The first end 52 of the first wall portion 51 such as the 1x wall portion 55 may have a curved shape. This can prevent a gap from being generated between the first end 52 and the liquid crystal material or the second surface 201.

[0123] The first tip 52 may have a radius of curvature R1. The radius of curvature R1 is, for example, 0.5 μm or more, may be 1.0 μm or more, or may be 3.0 μm or more. The radius of curvature R1 is, for example, 20.0 μm or less, may be 10.0 μm or less, or may be 5.0 μm or less.

[0124] Fig. 15B is a longitudinal sectional view showing an example of the shape of the 1x wall portion 55 when viewed along the line XV-XV in Fig. 7. The first end 52 of the first wall portion 51 such as the 1x wall portion 55 may have a pointed shape. This can prevent a gap from being generated between the first end 52 and the liquid crystal material or the second surface 201.

[0125] The first tip 52 may have a tip angle θ1. The tip angle θ1 is, for example, 30° or more, may be 45° or more, or may be 60° or more. The tip angle θ1 is, for example, 150° or less, may be 120° or less, or may be 100° or less.

[0126] Next, a description will be given of an example of a manufacturing method for the reflection device 100. The manufacturing method for the reflection device 100 includes at least a step of preparing a first structure 50, a step of preparing a second structure 60, a filling step of filling the second structure 60 with a liquid crystal material, and a combining step of combining the second structure 60 with the first structure 50.

[0127] An example of a manufacturing method for the first structure 50 will be described. The first structure 50 is obtained by forming a first wall portion 51 on the first surface 101 of the first electrode substrate 10 including the first substrate 11 and the first electrode 12. Figures 16 and 17 are diagrams for explaining an example of a first wall portion forming step for forming the first wall portion 51.

[0128] In the first wall portion forming step, a first layer 57 may be formed on the first surface 101 as shown in Fig. 16. The first layer 57 constitutes a part of the 1x wall portion 55, the 1x stopper 552, and a part of the 1y wall portion 56. Also, as shown in Fig. 16, a second layer 58 may be prepared. The second layer 58 constitutes a part of the 1x wall portion 55 and a part of the 1y wall portion 56.

[0129] Next, the second layer 58 is attached to the first layer 57. As a result, the 1x wall portion 55 including the first layer 57 and the second layer 58 is formed, as shown in FIG.

[0130] 18 and 19 are diagrams for explaining an example of a step of forming the first layer 57. As shown in FIG. 18, the first layer 57 is formed on the first surface 101. The first layer 57 may be transferred to the first surface 101 from a dry film, for example. The first layer 57 may contain a photosensitive resin such as a photocurable resin. For example, the first layer 57 may contain an acrylic resin.

[0131] When the first layer 57 includes a photosensitive resin, an exposure step is performed in which the first layer 57 is exposed to light using an exposure mask 80, as shown in FIG. 18 . The exposure mask 80 includes a base material 81 and a light-shielding layer 82. The light-shielding layer 82 is made of a material that does not transmit light. For example, the light-shielding layer 82 includes a metal. Gaps in the light-shielding layer 82 form the transmission regions 83. The first layer 57 is irradiated with light that has passed through the transmission regions 83.

[0132] 19 is a plan view showing an example of the exposure mask 80. The transmissive region 83 has a pattern corresponding to the 1x-th wall portion 55, the 1x-th stopper 552, and the 1y-th wall portion 56 in a plan view. For example, the transmissive region 83 includes a portion extending in the x-direction Dx and a portion extending in the y-direction Dy.

[0133] In the transmitting region 83, a portion through which the light irradiated to the first layer 57 corresponding to the 1x stopper 552 transmits is indicated by the reference symbol 84. The portion 84 is located away from the transmitting region 83 extending in the y direction Dy. Therefore, in the portion 84, interference between the lights transmitting through the transmitting region 83 is unlikely to occur. This improves the accuracy of the shape of the 1x stopper 552.

[0134] 20 to 23 are diagrams for explaining an example of a process of forming the second layer 58. As shown in FIG. 20, the 2-1 layer 581 may be formed on the carrier substrate 70. The 2-1 layer 581 may be transferred from the first dry film 71 to the carrier substrate 70, for example. The first dry film 71 includes the 2-1 layer 581, and a first cover 711 and a first support 712 positioned to sandwich the 2-1 layer 581. The process of transferring the 2-1 layer 581 to the carrier substrate 70 includes, for example, a process of peeling the first cover 711 from the 2-1 layer 581, a process of attaching the 2-1 layer 581 to the carrier substrate 70, and a process of peeling the first support 712 from the 2-1 layer 581. In the attaching process, the 2-1 layer 581 and the first support 712 may be pressed toward the carrier substrate 70 with a first pressure P1, as shown in FIG. 20.

[0135] 21, the 2-2 layer 582 may be formed on the 2-1 layer 581. The 2-2 layer 582 may be transferred from the second dry film 72 onto the 2-1 layer 581, for example. The second dry film 72 includes the 2-2 layer 582, and a second cover 721 and a second support 722 positioned to sandwich the 2-2 layer 582. The step of transferring the 2-2 layer 582 onto the 2-1 layer 581 includes, for example, a step of peeling the second cover 721 from the 2-2 layer 582, a step of attaching the 2-2 layer 582 to the 2-1 layer 581, and a step of peeling the second support 722 from the 2-2 layer 582. In the attaching step, the 2-2 layer 582 and the second support 722 may be pressed toward the 2-1 layer 581 with a second pressure P2, as shown in FIG. This prevents a gap from being generated between the 2-2 layer 582 and the 2-1 layer 581. The second pressure P2 may be higher than the first pressure P1.

[0136] The 2-1 layer 581 and the 2-2 layer 582 may contain a photosensitive resin such as a photocurable resin, similar to the first layer 57. For example, the 2-1 layer 581 and the 2-2 layer 582 may contain an acrylic resin. The 2-1 layer 581 and the 2-2 layer 582 constitute the second layer 58.

[0137] When the second layer 58 includes a photosensitive resin, an exposure step is performed in which the second layer 58 is exposed to light using an exposure mask 85, as shown in FIG. 22. The exposure mask 85 includes a base material 86 and a light-shielding layer 87. The light-shielding layer 87 is made of a material that does not transmit light. For example, the light-shielding layer 87 includes a metal. Gaps in the light-shielding layer 87 form the transmission regions 88. The second layer 58 is irradiated with light that has passed through the transmission regions 88.

[0138] 23 is a plan view showing an example of an exposure mask 85. The transmission region 88 has a pattern corresponding to the 1x wall portion 55 and the 1y wall portion 56 in a plan view. Unlike the above-described exposure mask 80, the exposure mask 85 does not include a portion of the transmission region 88 corresponding to the 1x slit 551. Instead, the exposure mask 85 includes a portion 89 of the light-shielding layer 87 corresponding to the 1x slit 551. Therefore, the 1x slit 551 is formed in the second layer 58.

[0139] 19 and 23, a portion 84 of the transmission region 83 corresponding to the 1x stopper 552 and a portion 89 of the light-shielding layer 87 corresponding to the 1x slit 551 are both located away from the transmission region 83 extending in the y-direction Dy. Therefore, optical interference is unlikely to occur in the portion 84 and the portion 89. This improves the accuracy of the shapes of the 1x slit 551 and the 1x stopper 552.

[0140] After the exposure step, a development step is performed to develop the second layer 58. After the development step, a baking step may be performed to heat the second layer 58. The second layer 58 includes the 2-1 layer 581 and the 2-2 layer 582, thereby increasing the aspect ratio of the first wall portion 51. Although not shown, the second layer 58 may include three or more layers. Although not shown, the first layer 57 constituting the 1x stopper 552 may also include two or more layers.

[0141] Although not shown, the second layer 58 may be composed of a single layer.

[0142] 24 , like the first wall portion 51 of the first structure 50, the second wall portion 61 of the second structure 60 may include a first layer 67 and a second layer 68. The first layer 67 may form a part of the 2x wall portion 65, a 2x stopper 652, and a part of the 2y wall portion 66. The second layer 58 may form a part of the 2x wall portion 65 and a part of the 2y wall portion 66.

[0143] After the second wall portion 61 is formed, a step of forming the alignment film 90 may be performed. For example, a solution containing a material constituting the alignment film 90 and a solvent is applied to the surface of the second wall portion 61 such as the second x-wall portion 65. Then, the liquid crystal layer 30 to which the solution has been applied is heated. As a result, the alignment film 90 is formed on the surface of the second wall portion 61 as shown in FIG.

[0144] Although not shown, a water-repellent layer may be formed on the second surface 201. The water-repellent layer can suppress the formation of the alignment film 90 on the second surface 201.

[0145] The alignment film 90 exerts a regulating force on the liquid crystal layer 30. The force from the alignment film 90 also acts on the second wall portion 61. By increasing the width of the second wall portion 61, deformation of the second wall portion 61 due to the force from the alignment film 90 can be suppressed.

[0146] 26 is a plan view showing a filling step of filling the second structure 60 with the liquid crystal material 31. In the filling step, the air around the second structure 60 arranged in the sealed space is discharged to the outside. Then, the liquid crystal material 31 is supplied onto the second surface 201 of the second structure 60. As shown by the arrows in FIG. 26, the liquid crystal material 31 moves in the y direction Dy along the second surface 201 through the space between two second y wall portions 66 adjacent in the x direction Dx.

[0147] 26, a second x-slit 651 is formed in the second x-wall portion 65 extending in the x-direction Dx. Therefore, the liquid crystal material 31 can pass through the second x-slit 651 and move in the y-direction Dy.

[0148] After the filling step, a degassing step may be performed. In the degassing step, the gap between the liquid crystal material 31 filled in the second structure 60 and the second wall portion 61 is removed. The gas forming the gap is discharged from the opening at the tip of the second wall portion 61 in the z direction Dz, as well as from the second x slit 651 of the second x wall portion 65. Therefore, the time required for the degassing step is reduced compared to the case where the degassing step is performed on the liquid crystal material of a cell surrounded on all sides.

[0149] 27, a combining step is performed. In the combining step, the first structure 50 is combined with the second structure 60 filled with the liquid crystal material 31. Specifically, the first y wall portion 56 of the first structure 50 is inserted into the second x slit 651 of the second x wall portion 65 of the second structure 60. Also, the second y wall portion 66 of the second structure 60 is inserted into the first x slit 551 of the first x wall portion 55 of the first structure 50. The space partitioned by the multiple second wall portions 61 and filled with the liquid crystal material 31 is further partitioned by the first wall portion 51 of the first structure 50. In this way, a reflecting device 100 including the wall structure 40 is obtained.

[0150] The alignment film 90 does not have to be formed on the surface of the first wall portion 51 of the first structure 50. This makes it possible to suppress deformation of the first wall portion 51 due to a force from the alignment film 90.

[0151] The liquid crystal material 31 overlapping the first end 52 of the first wall portion 51 in a plan view is pushed out into one of the two cells 43 partitioned by the first wall portion 51. For example, the liquid crystal material 31 overlapping the end of the first x-wall portion 55 of the first wall portion 51 is pushed out into one of the two adjacent cells 43 in the y-direction Dy. For example, the liquid crystal material 31 overlapping the end of the first y-wall portion 56 of the first wall portion 51 is pushed out into one of the two adjacent cells 43 in the x-direction Dx. As described above, since a gap is formed in the surface direction of the reflecting device 100 and / or in the thickness direction of the reflecting device 100, the liquid crystal material 31 can move between the two adjacent cells 43. This makes it possible to suppress the occurrence of a difference in volume or pressure of the liquid crystal material 31 in each cell 43.

[0152] According to the present embodiment, since the wall structure 40 is separated into the first wall portion 51 of the first structure 50 and the second wall portion 61 of the second structure 60, the time required for the filling step and the degassing step can be reduced. Therefore, the productivity of the reflecting device 100 can be improved.

[0153] An example of the effect of the present embodiment will be described based on a comparison with a comparative embodiment. Fig. 28 is a plan view showing a wall structure 40 in the comparative embodiment. In the comparative embodiment, the wall structure 40 is formed on the second electrode substrate 20 of the second structure 60. The second wall portion 61 of the wall structure 40 includes a plurality of second x-wall portions 65 extending in the x-direction Dx and a plurality of second y-wall portions 66 extending in the y-direction Dy. Both the 2 x-wall portions 65 and the 2 y-wall portions 66 extend continuously without any gaps.

[0154] In the process of forming the second wall portion 61, an exposure process is performed using an exposure mask having a transmission region having a pattern corresponding to the plurality of 2x wall portions 65 and the plurality of 2y wall portions 66. Since the transmission region extends continuously in a plurality of directions, it is considered that interference occurs between lights passing through the transmission region. For this reason, it is considered that the positional accuracy of the exposure process is reduced.

[0155] In the present embodiment, as described above, interference of light in the exposure process is suppressed at the positions corresponding to 1x slit 551 and 1x stopper 552. This improves the accuracy of the shapes of 1x slit 551 and 1x stopper 552. Therefore, a gap is formed with high accuracy in the surface direction of reflecting device 100 and / or in the thickness direction of reflecting device 100.

[0156] The above-described embodiment can be modified in various ways. Hereinafter, other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiment are used for parts that can be configured similarly to the above-described embodiment. Duplicate descriptions will be omitted. In addition, if it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, the description may be omitted.

[0157] (First Modification) Fig. 29 is a vertical cross-sectional view showing an example of a manufacturing process of the second structure 60 according to the first modified example. As shown in Fig. 29, the second structure 60 may include an alignment film 95 located on the second surface 201. The alignment film 95 may be formed on the second surface 201 before the second wall portion 61 is formed on the second surface 201. A rubbing treatment may be performed on the alignment film 95.

[0158] After the second wall portion 61 is formed on the second surface 201, a step of forming an alignment film 90 may be performed as shown in Fig. 30. For example, a solution containing a material and a solvent constituting the alignment film 90 is applied to the surface of the second wall portion 61, such as the 2y-wall portion 66. The alignment film 90 may be formed on the alignment film 95. Thereafter, a step of forming a liquid crystal layer 30 is performed.

[0159] The alignment film 95 may have a regulating force different from that of the alignment film 90. For example, when the alignment film 90 is a vertical alignment film, the alignment film 95 may be a horizontal alignment film. In the example shown in FIG. 27, the regulating force of the alignment film 95, which is a horizontal alignment film, is higher than the regulating force of the alignment film 90, which is a vertical alignment film. Therefore, the regulating force of the alignment film 95 can extend to the liquid crystal layer 30 overlapping the alignment film 95 and the alignment film 90 in the z direction Dz.

[0160] Although not shown, the alignment film 90 is formed on the surface of the second wall portion 61 but does not necessarily have to be formed on the alignment film 95 .

[0161] Although not shown, the second structure 60 may include only one of a horizontal alignment film and a vertical alignment film. For example, the second structure 60 may include a horizontal alignment film located on the second surface 201, but may not include a vertical alignment film located on the surface of the second wall portion 61. For example, the second structure 60 may include a vertical alignment film located on the surface of the second wall portion 61, but may not include a horizontal alignment film located on the second surface 201.

[0162] Although not shown, the arrangement of the vertical alignment film and the horizontal alignment film may be changed depending on the type of liquid crystal material. For example, the second structure 60 may include a vertical alignment film located on the second surface 201 and a horizontal alignment film located on the surface of the second wall portion 61.

[0163] (Second Modification) In the above embodiment, an example has been shown in which the exposure step and the development step are carried out separately for the multiple layers that make up the first wall portion 51, but the timing of the exposure step and the development step is not limited.

[0164] For example, after one or more layers constituting the first wall portion 51 are formed on the first surface 101, one or more layers may be exposed simultaneously. In this case, exposure is performed so that resin remains in the portion corresponding to the 1x stopper 552 and resin does not remain in the portion corresponding to the 1x slit 551. Similarly, after one or more layers constituting the second wall portion 61 are formed on the second surface 201, one or more layers may be exposed simultaneously.

[0165] (Third Modification) In the above-described embodiment, an example has been described in which the first wall portion 51 and the second wall portion 61 are formed by exposing and developing a resin layer containing a photosensitive resin, but the method of forming the first wall portion 51 and the second wall portion 61 is not limited. For example, the first wall portion 51 and the second wall portion 61 may be formed by a 3D printer. For example, the first wall portion 51 and the second wall portion 61 may be formed by an imprint method.

[0166] Although several modified examples of the embodiment described above have been explained, it is of course possible to combine a plurality of modified examples appropriately and apply them to the embodiment described above. [Explanation of symbols]

[0167] 10...First electrode substrate 101…1st surface 102…First back 11...First board 12...1st electrode 20…Second electrode substrate 201…Second surface 202…Second back 21...Second board 22…Second electrode 30...Liquid crystal layer 31...Liquid crystal materials 40…Wall structure 43…Cell 50…first structure 51…First wall part 52…1st tip 55…1st wall section 551…1st slit 552…1st stopper 56…1st y wall part 57…1st layer 58...Second layer 60…Second structure 61…Second wall part 62…Second tip 65...2nd x wall section 651…2nd slit 652…2nd stopper 66…2nd y wall part 67…1st layer 68…Second layer 90...Alignment film 95...Alignment film

Claims

1. 1. A reflecting device, comprising: a first structure including a first electrode substrate including a first surface and a first back surface located opposite to the first surface, and a first wall portion protruding from the first surface along a normal direction of the first surface; a second electrode substrate including a second surface facing the first surface and a second back surface located on the opposite side of the second surface, and a second wall portion protruding from the second surface along a normal direction of the second surface; and a liquid crystal layer located between the first surface of the first structure and the second surface of the second structure; the first electrode substrate includes a first electrode located on the first surface and a first substrate supporting the first electrode; the second electrode substrate includes a second electrode located on the second surface and a second substrate supporting the second electrode; the first wall portion and the second wall portion divide a space between the first surface of the first electrode substrate and the second surface of the second electrode substrate into a plurality of cells; a gap is provided between the tip of the first wall and the second surface; A reflector, wherein there is a gap between the tip of the second wall and the first surface.

2. The first wall portion includes a plurality of first x-wall portions extending in an x-direction in a plan view, a first x-slit located between two of the first x-wall portions adjacent to each other in the x-direction, and a plurality of first y-wall portions extending in a y-direction intersecting the x-direction in a plan view, The second wall portion includes a plurality of second x-wall portions extending in the x-direction in a plan view, a second x-slit located between two of the second x-wall portions adjacent to each other in the x-direction, and a plurality of second y-wall portions extending in the y-direction in a plan view, The first y-wall portion extends in the y-direction so as to pass through at least one of the second x-slits, The reflecting device of claim 1 , wherein the second y-wall portion extends in the y-direction through at least one of the first x-slits.

3. the first wall portion includes a first x stopper that overlaps the first x slit in a plan view and has a height smaller than a height of the first x wall portion; the first x-stopper is in contact with a tip of the second y-wall portion in a normal direction of the second surface, the second wall portion includes a second x stopper that overlaps the second x slit in a plan view and has a height smaller than a height of the second x wall portion, The reflecting device according to claim 2 , wherein the second x-stopper is in contact with a tip of the first y-wall portion in a normal direction to the first surface.

4. The first y-wall portion extends in the y-direction so as to pass through a plurality of the second x-slits, The reflecting device according to claim 3 , wherein the second y-wall portion extends in the y-direction so as to pass through a plurality of the first x-slits.

5. The reflection device according to any one of claims 2 to 4, wherein a gap (G1x) in the x direction between the second y-wall portion and the first x-wall portion located in the first x-slit is 1.0 μm or more.

6. 6. The reflection device according to claim 5, wherein a ratio G1x / W2y of the gap (G1x) to a width (W2y) of the second y-wall portion in the x-direction is not less than 0.1 and not more than 1.

0.

7. The reflection device according to any one of claims 2 to 4, wherein a gap (G2x) in the x direction between the first y-wall portion and the second x-wall portion located in the second x-slit is 1.0 μm or more.

8. 8. The reflecting device according to claim 7, wherein a ratio G2x / W1y of the gap (G2x) to a width (W1y) of the first y-wall portion in the x-direction is not less than 0.1 and not more than 1.

0.

9. The reflecting device according to any one of claims 1 to 4, wherein a tip of the first wall portion in a normal direction to the first surface has a curved or pointed shape.

10. The reflector device according to any one of claims 1 to 4, further comprising an alignment film located on a surface of the second wall portion.

11. A method for manufacturing a reflector device, comprising the steps of: filling the second structure with a liquid crystal material; and combining the first structure with the second structure filled with the liquid crystal material, the first structure includes a first electrode substrate including a first surface and a first back surface located opposite to the first surface, and a first wall portion protruding from the first surface along a normal direction of the first surface; the second structure includes a second electrode substrate including a second surface and a second back surface located opposite to the second surface, and a second wall portion protruding from the second surface along a normal direction of the second surface, the first electrode substrate includes a first electrode located on the first surface and a first substrate supporting the first electrode; the second electrode substrate includes a second electrode located on the second surface and a second substrate supporting the second electrode; In the filling step, the liquid crystal material is filled into spaces partitioned by the second wall portions, After the combining step, the first wall portion is partitioned by a plurality of the second wall portions, and a space filled with the liquid crystal material is further partitioned, a gap is provided between the tip of the first wall and the second surface; A method for manufacturing a reflector, wherein there is a gap between the tip of the second wall and the first surface.

12. The first wall portion includes a plurality of first x-wall portions extending in an x-direction in a plan view, a first x-slit located between two of the first x-wall portions adjacent to each other in the x-direction, and a plurality of first y-wall portions extending in a y-direction intersecting the x-direction in a plan view, The second wall portion includes a plurality of second x-wall portions extending in the x-direction in a plan view, a second x-slit located between two of the second x-wall portions adjacent to each other in the x-direction, and a plurality of second y-wall portions extending in the y-direction in a plan view, The method for manufacturing a reflection device according to claim 11 , wherein in the combining step, the first structure is combined with the second structure such that the first y-wall portion passes through at least one of the second x-slits and the second y-wall portion passes through at least one of the first x-slits.

13. the first wall portion includes a first x stopper that overlaps the first x slit in a plan view and has a height smaller than a height of the first x wall portion; the first x-stopper is in contact with a tip of the second y-wall portion in a normal direction of the second surface, the second wall portion includes a second x stopper that overlaps the second x slit in a plan view and has a height smaller than a height of the second x wall portion, The method for manufacturing a reflecting device according to claim 12 , wherein the second x-stopper is in contact with a tip of the first y-wall portion in a normal direction to the first surface.

14. The method for manufacturing a reflector device according to any one of claims 11 to 13, further comprising a degassing step for removing any gap between the liquid crystal material filled in the second structure and the second wall portion.

15. The method for manufacturing a reflector according to claim 11, further comprising the step of forming an alignment film on a surface of the second wall portion of the second structure.

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