Organometallic complex and light-emitting device

Abstract

To provide an organometallic complex that can be used as a light-emitting material.SOLUTION: An organometallic complex is represented by General Formula (G1). In the formula, each of R2 and R8 represents a deuterated alkyl group having 1 to 10 carbon atoms, each of R1, R3 to R7, and R9 to R26 independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, at least one of R4 to R6 represents an alkyl group having 1 to 10 carbon atoms, and at least one of R22 to R26 represents an alkyl group having 3 to 10 carbon atoms.SELECTED DRAWING: None

Description

Technical Field

[0001] One aspect of the present invention relates to an organometallic complex, an organic compound, a light-emitting device, a light-receiving device, a light-emitting and receiving device, a light-emitting device, a light-emitting and receiving device, a display device, an electronic device, a lighting device, and an electronic device. Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, an imaging device, a driving method thereof, or a manufacturing method thereof.

Background Art

[0002] The practical application of organic EL devices (organic EL elements) typified by light-emitting devices, light-receiving devices, and light-emitting and receiving devices that utilize electroluminescence (EL) using organic compounds has been progressing.

[0003] For example, the basic configuration of a light-emitting device is one in which an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes. By applying a voltage to this device to inject carriers and utilizing the recombination energy of the carriers, light emission from the light-emitting material can be obtained.

[0004] In addition, the basic configuration of a light-receiving device is one in which an organic compound layer (active layer) containing a photoelectric conversion material is sandwiched between a pair of electrodes. By absorbing light energy by this device and generating carriers, electrons from the photoelectric conversion material can be obtained.

[0005] For example, a functional panel in which a pixel provided in a display area includes a light-emitting element (light-emitting device) and a photoelectric conversion element (light-receiving device) is known (Patent Document 1).

[0006] As described above, displays or lighting devices using organic EL devices are very suitable for various electronic devices, and research and development are underway to obtain organic EL devices with better efficiency and longer lifespan.

[0007] Although the characteristics of organic EL devices have improved remarkably, they are still insufficient to meet the high demands for all characteristics, including efficiency and durability. In particular, to solve problems specific to organic EL devices, such as burn-in, it is more advantageous if the efficiency degradation due to deterioration is smaller.

[0008] Regarding deterioration, it is greatly influenced by the light-emitting center substance and the materials around it. Therefore, the development of organic compound materials containing organometallic complexes with good characteristics is actively underway.

Prior Art Documents

Patent Documents

[0009]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0010] One aspect of the present invention aims to provide a novel organometallic complex. Another aspect of the present invention aims to provide an organometallic complex with a stable excited state. Another aspect of the present invention aims to provide an organometallic complex that can be used as a luminescent material. Another aspect of the present invention aims to provide an organometallic complex that is easy to synthesize. Another aspect of the present invention aims to provide a light-emitting device with a long driving life. Another aspect of the present invention aims to provide a light-emitting device with a small voltage change during driving. Another aspect of the present invention aims to provide a novel light-emitting device. Another aspect of the present invention aims to reduce the manufacturing cost of a light-emitting device. Another aspect of the present invention aims to provide a light-emitting device, an electronic device, or a lighting device with low power consumption.

[0011] Another aspect of the present invention aims to provide an organometallic complex in which a partial structure is selectively deuterated. Another aspect of the present invention aims to perform molecular design that can reduce the complexity of the synthetic route, high temperature and high pressure during synthesis, etc., and to synthesize an organometallic complex thus molecularly designed.

[0012] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not need to solve all of these problems. Note that other problems will be naturally revealed from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0013] One aspect of the present invention is an organometallic complex represented by the following general formula (G1).

[0014]

Chemical formula

[0015] However, in the above general formula (G1), R2 and R 8 represents an alkyl group having 1 to 10 carbon atoms and having deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and R 4 to R 6 at least one of which represents an alkyl group having 1 to 10 carbon atoms, and R 22 to R 26 any one or more of which represents an alkyl group having 3 to 10 carbon atoms.

[0016] In the organometallic complex having the above structure, it is more preferable that R 23 and R 25 represent an alkyl group having 3 to 10 carbon atoms.

[0017] Further, one aspect of the present invention is an organometallic complex represented by the following general formula (G1).

[0018]

Chemical formula

[0019] However, in the above general formula (G1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms and having deuterium, R 5 represents an alkyl group having 1 to 10 carbon atoms, R 1 , R 3 , R 4 , R 6 , R 7 and R 9 to R 26 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and R 22 to R 26 any one or more of which represents an alkyl group having 3 to 10 carbon atoms.

[0020] Also, one aspect of the present invention is an organometallic complex represented by the following general formula (G1).

[0021]

Chemical formula

[0022] In the above general formula (G1), R 5 represents an alkyl group having 1 to 10 carbon atoms, R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms and having deuterium, R 23 and R 25 represent an alkyl group having 3 to 10 carbon atoms, R 1 , R 3 , R 4 , R 6 , R 7 , R 9 to R 22 , R 24 and R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

[0023] Also, one aspect of the present invention is an organometallic complex represented by the following general formula (G2).

[0024]

Chemical formula

[0025] In the above general formula (G2), R 1 , R 3 , R 4 , R 6 , R 7 , R 9 to R 22 , R 24 and R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

[0026] Another aspect of the present invention is an organometallic complex represented by the following structural formula (100).

[0027]

Chemical formula

[0028] One aspect of the present invention is a light-emitting device using the above organometallic complex. Another aspect of the present invention is a light-emitting device having a light-emitting layer containing the above organometallic complex. Further, a light-emitting device having the above light-emitting device using the organometallic complex and a light-receiving device is provided.

[0029] Another aspect of the present invention is a light-emitting device having the light-emitting device configured as described above and a transistor or a substrate.

[0030] Another aspect of the present invention is an electronic device having the light-emitting device configured as described above and a detection unit, an input unit, or a communication unit.

[0031] Another aspect of the present invention is a lighting device having the light-emitting device configured as described above and a housing.

Advantages of the Invention

[0032] According to one aspect of the present invention, a novel organometallic complex can be provided. According to one aspect of the present invention, an organometallic complex with a stable excited state can be provided. According to one aspect of the present invention, an organometallic complex that can be used as a light-emitting material can be provided. According to one aspect of the present invention, an organometallic complex that is easy to synthesize can be provided. According to one aspect of the present invention, a novel light-emitting device can be provided. According to one aspect of the present invention, a light-emitting device with a long driving life can be provided. According to one aspect of the present invention, a light-emitting device with a small voltage change during driving can be provided. According to one aspect of the present invention, the manufacturing cost of the light-emitting device can be reduced. According to one aspect of the present invention, a light-emitting device, an electronic device, or a lighting device with low power consumption can be provided.

[0033] Note that the description of these effects does not preclude the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will be apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0034]

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DETAILED DESCRIPTION OF THE INVENTION

[0035] (Embodiment 1) In this embodiment, an organometallic complex which is one aspect of the present invention, and a light-emitting device using the organometallic complex will be described.

[0036] <Configuration example of a light-emitting device> First, the configuration of the light-emitting device according to one aspect of the present invention will be described below with reference to FIGS. 1(A) and 1(B).

[0037] FIG. 1(A) is a cross-sectional schematic view of a light-emitting device 10 according to one aspect of the present invention.

[0038] The light-emitting device 10 has a pair of electrodes (a first electrode 101 and a second electrode 102), and an organic compound layer 103 provided between the pair of electrodes. The organic compound layer 103 has at least a light-emitting layer 113.

[0039] In addition, the organic compound layer 103 shown in FIG. 1(A) has functional layers such as a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113.

[0040] In the present embodiment, among the pair of electrodes, the first electrode 101 is described as the anode and the second electrode 102 is described as the cathode. However, the configuration of the light-emitting device 10 is not limited to this. That is, the first electrode 101 may be the cathode, the second electrode 102 may be the anode, and the lamination of each layer between the electrodes may be in the reverse order. That is, from the anode side, the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron transport layer 114, and the electron injection layer 115 may be laminated in this order.

[0041] Note that the configuration of the organic compound layer 103 is not limited to the configuration shown in FIG. 1(A), and it may have a configuration having at least one selected from the hole injection layer 111, the hole transport layer 112, the electron transport layer 114, and the electron injection layer 115. Alternatively, the organic compound layer 103 may have a configuration having a functional layer having a function such as reducing the injection barrier of holes or electrons, improving the transportability of holes or electrons, inhibiting the transportability of holes or electrons, or suppressing the quenching phenomenon by the electrodes. Note that each functional layer may be a single layer or a configuration in which a plurality of layers are laminated.

[0042] FIG. 1(B) is a schematic cross-sectional view showing an example of the light-emitting layer 113 shown in FIG. 1(A). The light-emitting layer 113 shown in FIG. 1(B) includes a host material 118 (organic compound 118_1 and organic compound 118_2) and a guest material 119.

[0043] Moreover, as the guest material 119, a light-emitting organometallic complex may be used, and as the light-emitting organometallic complex, a substance capable of emitting phosphorescence (hereinafter also referred to as a phosphorescent compound) is preferably used. In the following description, a configuration using an organometallic complex as the guest material 119 will be described.

[0044] In the present invention, an organometallic complex having platinum (Pt) as a central metal is used as the guest material 119. The organometallic complex used in the present invention has a pyridine ring coordinated to the central metal, and the pyridine ring has an alkyl group having deuterium at the 3rd and 5th positions. Further, the 4th position of the pyridine ring has a phenyl group, and the phenyl group further has an alkyl group.

[0045] In this specification and the like, hydrogen includes protium and deuterium. Deuterium refers to the one with a mass number of 2 among the stable isotopes of hydrogen. Protium refers to the one with a mass number of 1 among the stable isotopes of hydrogen. Since the dissociation energy of a carbon-deuterium bond is higher than that of a carbon-protium bond, in an organometallic complex having a pyridine ring, by introducing an alkyl group having deuterium at the 3rd and 5th carbon atoms of the pyridine ring where the spin density in the triplet excited state becomes high, the molecular stability can be enhanced. Further, the bond dissociation in the excited state can be suppressed, and the stability of the organometallic complex can be improved. Further, by introducing an alkyl group having deuterium at the 3rd and 5th carbon atoms of the pyridine ring where the distribution of the lowest unoccupied molecular orbital (LUMO) is concentrated, the stability of the organometallic complex in the state where electrons are received by the LUMO, that is, in the reduced state, can be improved.

[0046] In addition, in an organometallic complex having a pyridine ring, by introducing an alkyl group having deuterium, a steric hindrance effect on the phenyl group bonded to the 4-position of the pyridine ring occurs. This suppresses the rotation of the phenyl group and improves the thermal properties of the organometallic complex, for example, the sublimability can be improved. In addition, the vibration of the organometallic complex can be suppressed, and the thermal deactivation from the excited state can be suppressed.

[0047] In addition, by introducing a phenyl group to the 4-position carbon atom between the 3-position and 5-position carbon atoms of the pyridine ring where the LUMO distribution is concentrated, the LUMO distribution can be broadened. In addition, the LUMO level can be stabilized, and the stability of the organometallic complex in the reduced state can be improved.

[0048] In addition, in an organometallic complex having a pyridine ring, by introducing a phenyl group to the 4-position carbon atom of the pyridine ring, the planarity of the organometallic complex can be enhanced. As a result, when the organometallic complex is used as a guest material in the light-emitting layer of a light-emitting device, a stronger molecular orientation is induced, and it becomes easier to orient horizontally in the plane of the substrate. In addition, when the organometallic complex emits light, since the light emission is presented in the vertical direction of the transition dipole moment related to the light emission of the organometallic complex, if the direction of the transition dipole moment of the organometallic complex is parallel to the substrate plane, the light emission presented in the direction perpendicular to the substrate plane from the organometallic complex increases, and the light extraction efficiency of the light-emitting device can be improved. Therefore, it is preferable that the organometallic complex is oriented so that the transition dipole moment related to the light emission of the organometallic complex is horizontal to the substrate plane.

[0049] In addition, since the phenyl group bonded to the 4-position of the pyridine ring has an alkyl group, the intermolecular interaction can be suppressed. For example, in the light-emitting layer 113 shown in Fig. 1(B), by using the organometallic complex of the present invention as the guest material 119, it is possible to prevent the guest material 119 from interacting with the host material 118 (either one or both of the organic compound 118_1 and the organic compound 118_2), so that the light-emitting efficiency of the light-emitting device 10 can be improved.

[0050] Therefore, for example, the organometallic complex of the present invention can be suitably used in the light-emitting layer of a light-emitting device. Further, for example, the organometallic complex of the present invention can be suitably used in a layer in contact with the light-emitting layer of a light-emitting device.

[0051] <Examples of organometallic complexes> One aspect of the present invention is an organometallic complex having platinum (Pt) as a central metal represented by the following general formula. The organometallic complex having platinum (Pt) is a substance that can be very suitably used as a material for a light-emitting device.

[0052] One aspect of the present invention is an organometallic complex represented by the following general formula (G1).

[0053]

Chemical formula

[0054] However, in the above general formula (G1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms having deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and at least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and any one or more of R 22 to R 26 represent an alkyl group having 3 to 10 carbon atoms. It is more preferable that R 23 and R 25 represent an alkyl group having 3 to 10 carbon atoms.

[0055] In the above general formula (G1), by bonding a phenyl group to the 4-position of the pyridine ring where the LUMO distribution is concentrated, the LUMO level can be stabilized. Further, in the above general formula (G1), R 2 and R 8By introducing an alkyl group having deuterium, the phenyl group bonded to the 4-position of the pyridine ring where the LUMO distribution is concentrated becomes more likely to be twisted with respect to the pyridine ring, so that it can be adjusted to have an appropriate LUMO level, and the emission of the organometallic complex can be made shorter in wavelength. In particular, in the above general formula (G1), R 2 and R 8 is an alkyl group having 1 to 10 carbon atoms having deuterium, which makes it difficult for carbon-deuterium bond dissociation to occur. Further, by introducing a deuterated alkyl group to the carbon atoms at the 3-position and 5-position of the pyridine ring where the LUMO distribution is concentrated, the stability of the organometallic complex in the state where electrons are received by the LUMO, that is, in the reduced state, can be improved.

[0056] Further, in the above general formula (G1), by introducing an alkyl group having 1 to 10 carbon atoms into at least any one of R 4 to R 6 , intermolecular interaction can be suppressed and the luminous efficiency of the light-emitting device can be improved. In particular, in the above general formula (G1), it is more preferable to introduce an alkyl group having 1 to 10 carbon atoms into R 5 . The effect of suppressing intermolecular interaction can be enhanced. Further, the planarity of the organometallic complex can be enhanced.

[0057] Further, in the above general formula (G1), by introducing an alkyl group having 1 to 10 carbon atoms into at least any one of R 23 to R 25 , intermolecular interaction can be suppressed. In particular, in the above general formula (G1), it is more preferable to introduce an alkyl group having 1 to 10 carbon atoms into R 23 and R 25 . Thereby, the rotation of the phenyl group to which R 23 and R 25 are bonded is suppressed, and the thermal properties of the organometallic complex can be improved, for example, sublimability can be improved. Further, since thermal deactivation of molecules is suppressed, quantum efficiency can be improved. Further, since the effect of suppressing intermolecular interaction can be enhanced, the luminous efficiency of the light-emitting device can be improved.

[0058] Also, one aspect of the present invention is an organometallic complex represented by the following general formula (G2).

[0059]

Chemical formula

[0060] In the above general formula (G2), R 1 , R 3 , R 4 , R 6 , R 7 , R 9 to R 22 , R 24 and R 26 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

[0061] The general formula (G2) is different from the general formula (G1) in that R 2 and R 8 are limited to methyl-d 3 groups, R 5 is limited to a tert-butyl group, and R 23 and R 25 are limited to tert-butyl groups.

[0062] In the above general formula (G2), by limiting R 2 and R 8 to methyl-d 3 groups, the stability of the organometallic complex can be enhanced. Also, the organometallic complex can be synthesized at a lower cost compared to an alkyl group having 2 or more carbon atoms with deuterium.

[0063] Also, in the above general formula (G2), by limiting R 5 to a bulky tert-butyl group, the steric hindrance effect on surrounding materials can be further enhanced.

[0064] Also, in the above general formula (G2), R 23 and R25 By limiting it to a bulky tert-butyl group, the steric hindrance effect on the surrounding materials can be further enhanced. Also, R 23 and R 25 can suppress the rotation of the phenyl group to which they are attached, improving the thermal properties of the organometallic complex, such as sublimability. Also, since the thermal deactivation of the molecule can be suppressed, the quantum efficiency can be improved. Also, since the effect of suppressing intermolecular interaction can be enhanced, the luminous efficiency of the light-emitting device can be improved.

[0065] Next, specific examples of substituents applicable to the organometallic complexes represented by the general formula (G1) and the general formula (G2) will be described. In the specific examples described below, unless otherwise specified, some or all of the hydrogens may be deuteriums. Also, the groups applicable to the above general formula are not limited to the specific examples described below.

[0066] Specific examples of the alkyl group having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, sec-pentyl group, tert-pentyl group, neopentyl group, hexyl group, isohexyl group, 3-methylpentyl group, 2-methylpentyl group, 2-ethylbutyl group, 1,2-dimethylbutyl group, 2,3-dimethylbutyl group, 1-ethylhexyl group, etc. In particular, the tert-butyl group is more preferable because it is bulky and has a high effect of suppressing intermolecular interaction.

[0067] Specific examples of the alkyl group having 1 to 10 carbon atoms having deuterium include methyl-d 3 group, ethyl-d 5 group, propyl-d 7 group, 2-propyl-2-d group, isopropyl-d 7 group, butyl-d 9 group, 2-methyl-1-propyl-1,1-d 2 group, isobutyl-d 9 group, sec-butyl-d 9 group, tert-butyl-d 9Group, pentyl-d 11 Group, isopentyl-d 11 Group, hexyl-d 13 Groups such as 1-ethylhexyl-1-d group can be mentioned. In addition, groups in which one or more hydrogens of the groups specifically exemplified as the alkyl groups having 1 to 10 carbon atoms described above are replaced with deuterium can be mentioned. In particular, methyl-d 3 Groups in which all hydrogens are replaced with deuterium, such as the group, are preferable because they can further enhance the stability of the organometallic complex. Also, in the case of an organometallic complex into which a methyl-d 3 group is introduced, the organometallic complex can be synthesized at a lower cost compared to an organometallic complex into which an alkyl group having 2 or more carbon atoms having deuterium is introduced, which is preferable.

[0068] Specific examples of the aryl group having 6 to 18 carbon atoms include phenyl group, biphenyl group, naphthyl group, fluorenyl group, phenanthrenyl group, anthryl group, tetracen-yl group, benzanthracenyl group, triphenylenyl group, pyren-yl group, spirobi[9H-fluorene]-yl group and the like. When the aryl group having 6 to 18 carbon atoms has a substituent, specific examples of the substituent include an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0069] <Specific examples> Next, specific examples of the organometallic complex which is one embodiment of the present invention and has the structures represented by the above general formula (G1) and general formula (G2) are shown below.

[0070]

Chemical formula

[0071]

Chemical formula

[0072] The organometallic complexes represented by the above structural formulas (100) to (116) are examples of the organometallic complexes represented by the above general formula (G1) and general formula (G2), but the organometallic complexes of one aspect of the present invention are not limited thereto.

[0073] <Synthesis method of organometallic complex> Hereinafter, a synthesis method of the organometallic complex represented by the general formula (G1) will be described. Various reactions can be applied as the synthesis method of the organometallic complex. For example, the organometallic complex represented by the general formula (G1) can be synthesized by the following simple synthesis scheme.

[0074] <<Synthesis method 1>> First, the pyridylcarbazole derivative represented by (A1), which is a starting material of the organometallic complex represented by the general formula (G1), can be synthesized from the following scheme (s1-1). By reacting a pyridylcarbazole derivative (A'1) in which phenylbenzimidazole is ether-bridged with a hypervalent iodine reagent (A'2), the pyridylcarbazole derivative (A1) can be obtained.

[0075]

Chemical formula

[0076] In the above synthesis scheme (s1-1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms having deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and at least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and any one or more of R 22 to R 26 represent an alkyl group having 3 to 10 carbon atoms.

[0077] Next, the organometallic complex represented by the general formula (G1) can be obtained by reacting the pyridylcarbazole derivative (A1) obtained in the above scheme (s1-1) with a platinum compound containing halogen (such as dichloro(1,5-cyclooctadiene)platinum(II)) as shown in the synthesis scheme (s1-2).

[0078]

Chemical formula

[0079] In the above synthesis scheme (s1-2), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms with deuterium, R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and at least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and any one or more of R 22 to R 26 represent an alkyl group having 3 to 10 carbon atoms.

[0080] <<Synthesis method 2>> Also, for example, the organometallic complex represented by the general formula (G1) can be synthesized by the following simple synthesis scheme.

[0081] First, the pyridylcarbazole derivative represented by (B1), which is a starting material of the organometallic complex represented by the general formula (G1), can be synthesized from the following scheme (s2-1). By reacting the pyridylcarbazole derivative (B’1) in which a diamine compound is ether-bridged with triethyl orthoformate to cyclize, and then performing ion exchange with ammonium hexafluorophosphate, the pyridylcarbazole derivative (B1) can be obtained.

[0082]

Chem.

[0083] In the above synthesis scheme (s2-1), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms with deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and at least one of R 4 to R 6 represents an alkyl group having 1 to 10 carbon atoms, and any one or more of R 22 to R 26 represent an alkyl group having 3 to 10 carbon atoms.

[0084] Next, the organometallic complex represented by the general formula (G1) can be obtained by reacting the pyridylcarbazole derivative (B1) obtained in the above scheme (s2-1) with a platinum compound containing halogen (such as dichloro(1,5-cyclooctadiene)platinum(II)) as shown in the synthesis scheme (s2-2).

[0085]

Chem.

[0086] In the above synthesis scheme (s2-2), R 2 and R 8 represent an alkyl group having 1 to 10 carbon atoms with deuterium, and R 1 , R 3 to R 7 and R 9 to R 26 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and 4 to R 6At least one of them represents an alkyl group having 1 to 10 carbon atoms, and R 22 to R 26 One or more of them represent an alkyl group having 3 to 10 carbon atoms.

[0087] Since the above compounds (A’1), (A’2), (B’1) and (B’2) are commercially available in various types or can be synthesized, many types of organometallic complexes represented by the general formula (G1) can be synthesized. Therefore, the organometallic complex of one aspect of the present invention is characterized by having a rich variety of variations.

[0088] As described above, an example of the synthesis method of the organometallic complex of one aspect of the present invention has been described, but the present invention is not limited thereto, and it may be synthesized by any other synthesis method.

[0089] In addition, the organometallic complex shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0090] (Embodiment 2) In this embodiment, the configuration of the light-emitting device using the organometallic complex shown in Embodiment 1 will be described with reference to FIGS. 2(A) to 2(E).

[0091] <Basic structure of the light-emitting device> The basic structure of the light-emitting device will be described. FIG. 2(A) shows a light-emitting device having a structure (single structure) in which an organic compound layer including a light-emitting layer is provided between a pair of electrodes. Specifically, it has a structure in which an organic compound layer 103 is sandwiched between a first electrode 101 and a second electrode 102.

[0092] Further, FIG. 2(B) shows a light-emitting device having a stacked structure (tandem structure) in which a plurality of (two layers in FIG. 2(B)) organic compound layers (103a, 103b) are provided between a pair of electrodes and a charge generation layer 106 is provided between the organic compound layers. The tandem structure light-emitting device can realize a highly efficient light-emitting device without changing the current amount.

[0093] When a potential difference is generated between the first electrode 101 and the second electrode 102, the charge generation layer 106 has a function of injecting electrons into one of the organic compound layers (103a or 103b) and injecting holes into the other organic compound layer (103b or 103a). Therefore, in FIG. 2(B), when a voltage is applied to the first electrode 101 such that the potential becomes higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103a, and holes are injected into the organic compound layer 103b.

[0094] Note that the charge generation layer 106 preferably has translucency with respect to visible light (specifically, the transmittance of visible light with respect to the charge generation layer 106 is 40% or more) from the viewpoint of light extraction efficiency. Further, the charge generation layer 106 functions even if it has a lower conductivity than the first electrode 101 and the second electrode 102.

[0095] Also, Fig. 2(C) shows the laminated structure of the organic compound layer 103 of the light-emitting device which is one aspect of the present invention. However, in this case, it is assumed that the first electrode 101 functions as an anode and the second electrode 102 functions as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially laminated on the first electrode 101. Note that the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having different emission colors are laminated. For example, a structure in which a light-emitting layer containing a light-emitting substance exhibiting red, a light-emitting layer containing a light-emitting substance exhibiting green, and a light-emitting layer containing a light-emitting substance exhibiting blue are laminated, or a structure in which they are laminated via a layer having a carrier transporting property may be used. Alternatively, a combination of a light-emitting layer containing a light-emitting substance exhibiting yellow and a light-emitting layer containing a light-emitting substance exhibiting blue may be used. However, the laminated structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having the same emission color are laminated. For example, a structure in which a first light-emitting layer containing a light-emitting substance exhibiting blue and a second light-emitting layer containing a light-emitting substance exhibiting blue are laminated, or a structure in which they are laminated via a layer having a carrier transporting property may be used. In the case of a structure in which a plurality of light-emitting layers having the same emission color are laminated, the reliability may be improved compared to a single-layer structure. Also, even in the case of having a plurality of organic compound layers as in the tandem structure shown in Fig. 2(B), each organic compound layer has a structure in which they are sequentially laminated as described above from the anode side. Also, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the lamination order of the organic compound layer 103 is reversed. Specifically, 111 on the first electrode 101 which is a cathode has a configuration in which 111 is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0096] The light-emitting layer 113 included in the organic compound layers (103, 103a, 103b) has a light-emitting substance and a plurality of substances appropriately combined, respectively, and can be configured to obtain fluorescence emission or phosphorescence emission that exhibits a desired emission color. Further, the light-emitting layer 113 may have a laminated structure with different emission colors. In this case, different materials may be used for the light-emitting substance and other substances used in each of the laminated light-emitting layers. Also, a configuration in which different emission colors can be obtained from the plurality of organic compound layers (103a, 103b) shown in FIG. 2(B) may be employed. In this case as well, different materials may be used for the light-emitting substance and other substances used in each light-emitting layer.

[0097] Further, in the light-emitting device which is one aspect of the present invention, for example, by using the first electrode 101 shown in FIG. 2(C) as a reflective electrode, the second electrode 102 as a semi-transmissive / semi-reflective electrode, and forming a microcavity structure, the light emission obtained from the light-emitting layer 113 included in the organic compound layer 103 can be resonated between both electrodes, and the light emission ejected from the second electrode 102 can be enhanced. Therefore, it is easy to achieve high definition. Also, since it is possible to enhance the light emission intensity in the front direction of a specific wavelength, power consumption can be reduced.

[0098] When the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a conductive material having reflectivity and a conductive material having translucency (transparent conductive film) located closer to the organic compound layer 103 side than the conductive material having reflectivity, optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust so that the optical distance (the product of the film thickness and the refractive index) between the first electrode 101 and the second electrode 102 becomes mλ / 2 (where m is an integer of 1 or more) or in the vicinity thereof with respect to the wavelength λ of the light obtained from the light-emitting layer 113.

[0099] Also, in the same case, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, the optical distance from the first electrode 101 to the region (light-emitting region) where the desired light of the light-emitting layer 113 is obtained, and the optical distance from the second electrode 102 to the region (light-emitting region) where the desired light of the light-emitting layer 113 is obtained are each preferably adjusted to be (2m'+1)λ / 4 (where m' is an integer of 1 or more) or in the vicinity thereof. Here, the light-emitting region refers to the recombination region of holes and electrons in the light-emitting layer 113.

[0100] By performing such optical adjustment, the spectrum of a specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, and light emission with good color purity can be obtained.

[0101] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can strictly be said to be the total thickness from the reflection region in the first electrode 101 to the reflection region in the second electrode 102. However, since it is difficult to strictly determine the reflection regions in the first electrode 101 and the second electrode 102, it is assumed that any positions of the first electrode 101 and the second electrode 102 are the reflection regions, and it is assumed that the above-described effects can be sufficiently obtained. Also, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can strictly be said to be the optical distance between the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer from which the desired light is obtained. However, since it is difficult to strictly determine the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer from which the desired light is obtained, it is assumed that any position of the first electrode 101 is the reflection region and any position of the light-emitting layer from which the desired light is obtained is the light-emitting region, and it is assumed that the above-described effects can be sufficiently obtained.

[0102] The light-emitting device shown in Fig. 2(D) is a light-emitting device having a tandem structure. By adopting the tandem structure, a light-emitting device capable of high-brightness light emission can be obtained. Also, compared with a single structure, the tandem structure can reduce the current required to obtain the same brightness, so that the reliability can be improved. Also, the power consumption can be reduced.

[0103] The light-emitting device shown in Fig. 2(E) is an example of the tandem-structured light-emitting device shown in Fig. 2(B). As shown in the figure, it has a structure in which three organic compound layers (103a, 103b, 103c) are laminated with charge generation layers (106a, 106b) interposed therebetween. Note that the three organic compound layers (103a, 103b, 103c) each have a light-emitting layer (113a, 113b, 113c), and the emission colors of the respective light-emitting layers can be freely combined. For example, the light-emitting layer 113a can be blue, the light-emitting layer 113b can be any of red, green, or yellow, and the light-emitting layer 113c can be blue. However, the light-emitting layer 113a can also be red, the light-emitting layer 113b can be any of blue, green, or yellow, and the light-emitting layer 113c can be red.

[0104] In the light-emitting device which is one aspect of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is an electrode having translucency (such as a transparent electrode, a semi-transmissive / semi-reflective electrode, etc.). When the electrode having translucency is a transparent electrode, the transmittance of visible light of the transparent electrode is 40% or more and 100% or less, preferably 60% or more and 100% or less. Also, in the case of a semi-transmissive / semi-reflective electrode, the reflectance of visible light of the semi-transmissive / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Also, these electrodes preferably have a resistivity of 1×10 -2 Ω·cm or less.

[0105] Also, in the light-emitting device which is one aspect of the present invention described above, when one of the first electrode 101 and the second electrode 102 is an electrode having reflectivity (reflective electrode), the reflectance of visible light of the electrode having reflectivity is 40% or more and 100% or less, preferably 70% or more and 100% or less. Also, this electrode preferably has a resistivity of 1×10 -2 Ω·cm or less.

[0106] <Specific structure of the light-emitting device> Next, the specific structure of the light-emitting device according to one embodiment of the present invention will be described. Here, the description will be made using FIG. 2(D) having a tandem structure. Note that the configuration of the organic compound layer is the same for the single-structured light-emitting devices shown in FIGS. 2(A) and 2(C). When the light-emitting device shown in FIG. 2(D) has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transmissive / semi-reflective electrode. Therefore, a desired electrode material can be used singly or in plurality and formed by being single-layered or laminated. Note that the second electrode 102 is formed by appropriately selecting a material after forming the organic compound layer 103b.

[0107] <Materials of the light-emitting device> ≪Light-emitting layer≫ The light-emitting layer (113, 113a, 113b) is a layer containing a light-emitting substance. Note that as the light-emitting substance that can be used for the light-emitting layer (113, 113a, 113b), substances that exhibit light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be appropriately used. When there are a plurality of light-emitting layers, a configuration in which different light-emitting colors are exhibited by using different light-emitting substances for each light-emitting layer (for example, white light emission obtained by combining light-emitting colors in a complementary color relationship) can be employed. Further, one light-emitting layer may have a laminated structure having different light-emitting substances.

[0108] In addition to the light-emitting substance (guest material), the light-emitting layer (113, 113a, 113b) may contain one or more kinds of organic compounds (host materials, etc.).

[0109] Specifically, as the light-emitting layer 113, the structure described with reference to FIG. 1(B) of Embodiment 1 can be used. In the light-emitting layer 113, the host material 118 is present in the largest amount by weight ratio, and the guest material 119 (phosphorescent compound) is dispersed in the host material 118. The T 1 level of the host material 118 (organic compound 118_1 and organic compound 118_2) of the light-emitting layer 113 is preferably higher than the T 1 level of the guest material (guest material 119) of the light-emitting layer 113.

[0110] As the organic compound 118_1, a material with higher electron transportability than hole transportability can be used, and it is preferably a material having an electron mobility of 1×10 -6 cm 2 / Vs or more. As a material that easily accepts electrons (a material having electron transportability), a compound having a π-electron deficient heteroaromatic ring skeleton such as a nitrogen-containing heteroaromatic compound, and a zinc or aluminum-based metal complex can be used. Examples of the compound having a π-electron deficient heteroaromatic ring skeleton include compounds such as oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. Examples of the zinc or aluminum-based metal complex include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand.

[0111] Specifically, for example, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq 3 ), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq 2) Metal complexes having a quinoline skeleton or a benzoquinoline skeleton, such as bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), etc. are mentioned. In addition, other metal complexes having oxazole-based or thiazole-based ligands such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ) can also be used. Furthermore, in addition to metal complexes, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 9-[4-(4,5-diphenyl-4H-1,2,4-triazol-3-yl)phenyl]-9H-carbazole (abbreviation: CzTAZ1), 2,2’,2’’-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), heterocyclic compounds such as bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3’-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3’-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,Quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzof[h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzof[h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-[3-(3,9'-bi-9H-carbazol-9-yl)phenyl]dibenzof[h]quinoxaline (abbreviation: 2mCzCzPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), and other heterocyclic compounds having a diazine skeleton, 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn) and other heterocyclic compounds having a triazine skeleton, 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB) and other heterocyclic compounds having a pyridine skeleton, 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs) and other heteroaromatic compounds can also be used. Among the above-mentioned heterocyclic compounds, heterocyclic compounds having a triazine skeleton, a diazine (pyrimidine, pyrazine, pyridazine) skeleton, or a pyridine skeleton are stable and have good reliability, and are preferred. In addition, the heterocyclic compounds having such a skeleton have high electron transport properties and also contribute to reducing the driving voltage. Further, polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used. The substances described here are mainly 1×10, -6 cm2 It is a substance having an electron mobility of 1 / Vs or more. In addition, as long as it is a substance with higher electron transportability than holes, substances other than the above may be used.

[0112] As the organic compound 118_2, a combination capable of forming an exciplex with the organic compound 118_1 is preferable. Specifically, it preferably has a highly donor-like skeleton such as a π-electron-excessive heteroaromatic ring skeleton or an aromatic amine skeleton. Examples of the compound having a π-electron-excessive heteroaromatic ring skeleton include heteroaromatic compounds such as dibenzothiophene derivatives, dibenzofuran derivatives, and carbazole derivatives. In this case, it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) so that the emission peak of the exciplex formed by the organic compound 118_1 and the organic compound 118_2 overlaps with the absorption band of the triplet MLCT (Metal to Ligand Charge Transfer) transition of the guest material 119 (phosphorescent compound), more specifically, the absorption band located at the longest wavelength. Thereby, a light-emitting device with a dramatically improved luminous efficiency can be obtained. However, when a thermally activated delayed fluorescence material is used instead of the phosphorescent compound, the absorption band located at the longest wavelength is preferably a singlet absorption band.

[0113] In addition, as the organic compound 118_2, the following hole-transporting materials can be used.

[0114] As the hole-transporting material, a material with higher hole transportability than electrons can be used, and it is preferably a material having a hole mobility of 1×10 -6 cm 2 / Vs or more. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc. can be used. In addition, the hole-transporting material may be a polymer compound.

[0115] As these materials with high hole-transporting properties, specifically, as aromatic amine compounds, N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can be mentioned.

[0116] Also, as carbazole derivatives, specifically, 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc. can be mentioned.

[0117] Also, as carbazole derivatives, among others, 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can be used.

[0118] Examples of the aromatic hydrocarbon include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. In addition, pentacene, coronene, etc. can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1×10 -6 cm 2 / Vs or more and having 14 or more and 42 or less carbon atoms.

[0119] Note that the aromatic hydrocarbon may have a vinyl skeleton. Examples of the aromatic hydrocarbon having a vinyl skeleton include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), etc.

[0120] Moreover, high molecular compounds such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N’-[4-(4-diphenylamino)phenyl]phenyl-N’-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), or poly[N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)benzidine] (abbreviation: Poly-TPD) can also be used.

[0121] Furthermore, examples of materials with high hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N′-bis(9,9′-spirobi[9H-fluorene]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluorene-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluorene-2-yl)amino]-9H-fluorene-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluorene-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,N’N’-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-2-amine (abbreviation: PCAFLP(2)-02), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,9-diphenylcarbazol-3-amine (abbreviation: PCASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluorene]-2,7-diamine (abbreviation: DPA2SF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,Aromatic amine compounds such as 7-diamine (abbreviation: YGA2F) can be used. Also, 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3,3’-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,6-di(9H-carbazol-9-yl)-9-phenyl-9H-carbazole (abbreviation: PhCzGI), 2,8-di(9H-carbazol-9-yl)dibenzothiophene (abbreviation: Cz2DBT), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4’,4’’-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4,4’,4’’-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), 4-[3-(triphenylene-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II) and other amine compounds, carbazole compounds, thiophene compounds, furan compounds, fluorene compounds, triphenylene compounds, phenanthrene compounds, etc. can be used. Among the above-mentioned compounds, compounds having a pyrrole skeleton, a furan skeleton, a thiophene skeleton, and an aromatic amine skeleton are stable and have good reliability, and are preferable. In addition, the compounds having such a skeleton have high hole transportability and also contribute to reducing the driving voltage.,

[0122] In addition, a substance that exhibits fluorescence (fluorescent substance) can be further used in the light-emitting layer. In this case, light emission occurs when the excitation energy of the phosphorescent substance moves to the fluorescent substance in the light-emitting layer. Since the transition from the singlet excited state to the singlet ground state is allowed for the fluorescent substance, the excitation lifetime (luminescence lifetime) is shorter than that of the phosphorescent substance. Therefore, by further using a fluorescent substance in the light-emitting layer, a light-emitting device with stable and good reliability can be fabricated.

[0123] Examples of the fluorescent substance include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. A fluorescent substance whose singlet excitation energy level and triplet excitation energy level are lower than the triplet excitation energy level of the phosphorescent substance can be used.

[0124] Specific examples include 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyl-di-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,N,N',N',N'',N'',N''',N''' - octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b’]bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b’]bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. can be mentioned.;

[0125] In addition, 5,9-diphenyl-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracene (abbreviation: DABNA1), 9-[(1,1’-diphenyl)-3-yl]-N,N,5,11-tetraphenyl-5,9-dihydro-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracen-3-amine (abbreviation: DABNA2), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine-7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: Me-tBu4DABNA), N7,N7,N13,N13,5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazaborino[2,3,4-kl][1,4]benzazaborino[4’,3’,2’:4,5][1,4]benzazaborino[3,2-b]phenazaborine-7,13-diamine (abbreviation: ν-DABNA), 2-(4-tert-butylphenyl)benz[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc), etc., condensed heteroaromatic compounds containing nitrogen and boron, especially compounds having a diaza-boranaphtho-anthracene skeleton, can be suitably used because they can obtain blue light emission with a narrow emission spectrum width and good color purity.

[0126] In addition to these, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3’,2’,1’:8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-G), 9,11-bis[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3’,2’,1’:8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-Y), etc. can be preferably used.

[0127] In addition, as the luminescent material contained in the light-emitting layer, a thermally activated delayed fluorescence (TADF) material can be used. As the thermally activated delayed fluorescence material, a heterocyclic compound having a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used. Specific examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), and the like. Since the heterocyclic compound has a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, it has high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron deficient heteroaromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), or a triazine skeleton is preferable because it is stable and has good reliability. Also, among the skeletons having a π-electron rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are preferable because they are stable and have good reliability, and it is preferable to have any one or more selected from among these skeletons. Note that as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable.In addition, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferable because both the donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-deficient heteroaromatic ring are strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small. Further, the compound having the above-described diaza-boranaphtho-anthracene skeleton also has a function as a thermally activated delayed fluorescence material and is suitable because blue light emission with good color purity can be obtained.

[0128] Alternatively, instead of the phosphorescent substance, a thermally activated delayed fluorescence material may be used. A thermally activated delayed fluorescence material is a material having a small difference between the triplet excitation energy level and the singlet excitation energy level and having a function of converting energy from the triplet excited state to the singlet excited state by reverse intersystem crossing. Therefore, up-conversion (reverse intersystem crossing) from the triplet excited state to the singlet excited state is possible with a small amount of thermal energy, and light emission (fluorescence) from the singlet excited state can be efficiently exhibited. Further, as conditions for efficiently obtaining thermally activated delayed fluorescence, the energy difference between the triplet excitation energy level and the singlet excitation energy level is preferably greater than 0 eV and 0.2 eV or less, more preferably greater than 0 eV and 0.1 eV or less.

[0129] Examples of the guest material 119 (phosphorescent compound) include iridium, rhodium, or platinum-based organometallic complexes, or metal complexes. Among them, as the metal complex, a platinum complex is preferable. Further, a platinum complex having a nitrogen-containing heterocyclic carbene, etc. may also be mentioned. Further, an organoiridium complex, for example, an iridium-based orthometal complex may be used. Examples of the ligand for orthometalation include a 4H-triazole ligand, a 1H-triazole ligand, an imidazole ligand, a pyridine ligand, a pyrimidine ligand, a pyrazine ligand, or an isoquinoline ligand.

[0130] In addition, as the guest material 119 (phosphorescent compound), it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) such that the LUMO level of the guest material 119 is higher than the LUMO level of the organic compound 118_1 and the HOMO level of the guest material 119 is lower than the highest occupied molecular orbital (HOMO) level of the organic compound 118_2. Thereby, a light-emitting device with high luminous efficiency and driven at a low voltage can be obtained.

[0131] In addition, as the guest material 119 (phosphorescent compound), it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) such that the LUMO level of the guest material 119 is higher than the LUMO level of the organic compound 118_1 and the HOMO level of the guest material 119 is higher than the HOMO level of the organic compound 118_2. Thereby, a light-emitting device with high luminous efficiency and driven at a low voltage can be obtained.

[0132] In addition, it is preferable to select the organic compound 118_1 and the guest material 119 (phosphorescent compound) such that the energy difference between the LUMO level of the organic compound 118_1 and the HOMO level of the guest material 119 (phosphorescent compound) is equal to or greater than the energy calculated from the absorption edge located at the longest wavelength among the absorption edges in the absorption spectrum of the guest material 119 (phosphorescent compound). Thereby, a light-emitting device with high luminous efficiency and driven at a low voltage can be obtained.

[0133] Note that the absorption edge located at the longest wavelength in the absorption spectrum can be obtained from a Tauc plot assuming direct transition by measuring the absorption spectrum of the target substance in a thin film state or in a thin film obtained by doping the target substance in a matrix material. Alternatively, the absorption spectrum of a solution of the target substance can be measured, and a tangent can be drawn at the half-value on the long-wavelength side of the peak or shoulder peak observed at the longest wavelength of the absorption spectrum, and the absorption edge can be calculated from the intersection of the tangent with the horizontal axis (wavelength) or the baseline. The solvent of the solution is not particularly limited, but solvents with relatively low polarity such as toluene and chloroform are preferred.

[0134] Note that the values of the HOMO level and the LUMO level used in this specification can be obtained by electrochemical measurement. Representative examples of electrochemical measurement include cyclic voltammetry (CV) measurement, differential pulse voltammetry (DPV) measurement, and the like.

[0135] In cyclic voltammetry (CV) measurement, the values of the HOMO level and the LUMO level (E) can be calculated based on the oxidation peak potential (E pa ), and the reduction peak potential (E pc ) obtained by changing the potential of the working electrode with respect to the reference electrode. In the measurement, the HOMO level is obtained from the positive-direction potential scan, and the LUMO level is obtained from the negative-direction potential scan. Also, the scan rate in the measurement is set to 0.1 V / s.

[0136] A specific calculation procedure for the HOMO level and the LUMO level will be described. From the oxidation peak potential (E pa ), and the reduction peak potential (E pc ) obtained from the cyclic voltammogram of the material, the standard redox potential (E o ) (= (E pa + E pc ) / 2) is obtained, and by subtracting it from the potential energy (E x ) of the reference electrode with respect to the vacuum level, the values of the HOMO level and the LUMO level (E) (= E x - E o) can be obtained respectively.

[0137] In addition, the above shows the case where a reversible redox wave is obtained. When an irreversible redox wave is obtained, for the calculation of the HOMO level, a value obtained by subtracting a certain value (0.1 eV) from the oxidation peak potential (E pa ) is assumed to be the reduction peak potential (E pc ), and the standard redox potential (E o ) is obtained to one decimal place. Also, for the calculation of the LUMO level, a value obtained by adding a certain value (0.1 eV) to the reduction peak potential (E pc ) is assumed to be the oxidation peak potential (E pa ), and the standard redox potential (E o ) is obtained to one decimal place.

[0138] Examples of substances having an emission peak in the blue or green wavelength region include, for example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: Ir(mpptz-dmp) 3 ), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(Mptz) 3 ), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPrptz-3b) 3 ), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(iPr5btz) 3 ), such organometallic iridium complexes having a 4H-triazole skeleton, tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: Ir(Mptz1-mp) 3 ), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: Ir(Prptz1-Me) 3Organometallic iridium complexes having a 1H-triazole skeleton such as (), fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: Ir(iPrpim) 3 ), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: Ir(dmpimpt-Me) 3 ), organometallic iridium complexes having an imidazole skeleton such as (), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3’,5’-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: Ir(CF 3 ppy) 2 (pic)), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ iridium(III) acetylacetonate (abbreviation: FIr(acac)), and organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand. Among the above, organometallic iridium complexes having a nitrogen-containing five-membered heterocyclic skeleton such as a 4H-triazole skeleton, a 1H-triazole skeleton, and an imidazole skeleton have high triplet excitation energy and are particularly preferable because of their reliability or excellent luminescence efficiency.

[0139] In addition, examples of substances having a luminescence peak in the green or yellow wavelength region include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: Ir(mppm) 3 ), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBuppm) 3 ), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(mppm)2 (acac)), bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: Ir(tBuppm) 2 (acac)), bis[4-(2-norbornyl)-6-phenylpyrimidinato]iridium(III) (abbreviation: Ir(nbppm) 2 (acac)), bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: Ir(mpmppm) 2 (acac)), bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: Ir(dmppm-dmp) 2 (acac)), bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: Ir(dppm) 2 (acac)) and other organometallic iridium complexes having a pyrimidine skeleton, bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: Ir(mppr-Me) 2 (acac)), bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Ir(mppr-iPr) 2 (acac)) and other organometallic iridium complexes having a pyrazine skeleton, tris(2-phenylpyridinato-N,C 2’ )iridium(III) (abbreviation: Ir(ppy) 3 ), bis(2-phenylpyridinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(ppy) 2 (acac)), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: Ir(bzq) 2 (acac)), tris(benzo[h]quinolinato)iridium(III) (abbreviation: Ir(bzq) 3 ), tris(2-phenylquinolinato-N,C 2’Iridium(III) (abbreviation: Ir(pq) 3 ), bis(2-phenylquinolinato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: Ir(pq) 2 (acac)), an organometallic iridium complex having a pyridine skeleton such as bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: Ir(dpo) 2 (acac)), bis{2-[4’-(perfluorophenyl)phenyl]pyridinato-N,C 2’} iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph) 2 (acac)), bis(2-phenylbenzothiazolato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: Ir(bt) 2 (acac)), and other organometallic iridium complexes such as tris(acetylacetonato)(monophenanthroline) terbium(III) (abbreviation: Tb(acac) 3 (Phen)). Among those described above, the organometallic iridium complex having a pyrimidine skeleton is particularly preferable because of its outstanding reliability or luminescence efficiency.

[0140] In addition, examples of substances having a luminescence peak in the yellow or red wavelength region include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: Ir(5mdppm) 2 (dibm)), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: Ir(5mdppm) 2 (dpm)), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: Ir(d1npm) 2 (dpm)), and other organometallic iridium complexes having a pyrimidine skeleton, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: Ir(tppr)2 (acac)), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: Ir(tppr) 2 (dpm)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: Ir(Fdpq) 2 (acac)) and other organometallic iridium complexes having a pyrazine skeleton, tris(1-phenylisoquinolinato-N,C 2’ )iridium(III) (abbreviation: Ir(piq) 3 ), bis(1-phenylisoquinolinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(piq) 2 (acac)), in addition to organometallic iridium complexes having a pyridine skeleton such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP), tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: Eu(DBM) 3 (Phen)), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: Eu(TTA) 3 (Phen)) and other rare earth metal complexes. Among the above, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because of their outstanding reliability or luminescence efficiency. In addition, organometallic iridium complexes having a pyrazine skeleton can obtain red luminescence with good chromaticity.

[0141] As the luminescent material contained in the light-emitting layer 113, any material capable of converting triplet excitation energy into light emission may be used. Examples of materials capable of converting triplet excitation energy into light emission include, in addition to phosphorescent compounds, thermally activated delayed fluorescence (TADF) materials. Therefore, with respect to the part described as a phosphorescent compound, it may be read as a thermally activated delayed fluorescence material. Note that a thermally activated delayed fluorescence material is a material having a small energy difference between the triplet excitation energy level and the singlet excitation energy level and having a function of converting energy from the triplet excited state to the singlet excited state by reverse intersystem crossing. Therefore, upconversion (reverse intersystem crossing) from the triplet excited state to the singlet excited state is possible with a small amount of thermal energy, and efficient light emission (fluorescence) from the singlet excited state can be exhibited. Further, as conditions for efficiently obtaining thermally activated delayed fluorescence, the energy difference between the triplet excitation energy level and the singlet excitation energy level is preferably greater than 0 eV and 0.2 eV or less, more preferably greater than 0 eV and 0.1 eV or less.

[0142] When the thermally activated delayed fluorescence material is composed of one type of material, for example, the following materials can be used.

[0143] First, derivatives such as fullerenes, acridine derivatives such as proflavine, and eosin can be mentioned. Further, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be mentioned. Examples of the metal-containing porphyrin include, for example, protoporphyrin-tin fluoride complex (SnF 2 (Proto IX)), mesoporphyrin-tin fluoride complex (SnF 2 (Meso IX)), hematoporphyrin-tin fluoride complex (SnF 2 (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF 2 (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2 (OEP)), tin fluoride etioporphyrin complex (SnF 2 (Etio I)), platinum chloride octaethylporphyrin complex (PtCl 2 (OEP)) and the like.

[0144] In addition, as a thermally activated delayed fluorescence material composed of a single type of material, a heterocyclic compound having a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can also be used. Specifically, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), etc. can be mentioned. Since the heterocyclic compound has a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, it has high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron deficient heteroaromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), or a triazine skeleton is preferable because it is stable and has good reliability. Also, among the skeletons having a π-electron rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are preferable because they are stable and have good reliability, and it is preferable to have any one or more selected from among these skeletons. Note that as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable.In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded is particularly preferable because both the donor property of the π-electron rich heteroaromatic ring and the acceptor property of the π-electron deficient heteroaromatic ring are strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small.

[0145] In addition, the light-emitting layer 113 can also be composed of two or more layers. For example, when the first light-emitting layer and the second light-emitting layer are laminated in order from the hole transport layer side to form the light-emitting layer 113, a substance having hole transport properties is used as the host material of the first light-emitting layer, and a substance having electron transport properties is used as the host material of the second light-emitting layer. There are configurations such as this. Also, the light-emitting materials of the first light-emitting layer and the second light-emitting layer may be the same material or different materials, and may be materials having a function of emitting light of the same color or materials having a function of emitting light of different colors. By using light-emitting materials having functions of emitting lights of different colors in the two light-emitting layers, a plurality of lights can be obtained simultaneously. In particular, it is preferable to select the light-emitting materials used for each light-emitting layer so that white light is obtained by the lights emitted by the two light-emitting layers.

[0146] In addition, the light-emitting layer 113 may have materials other than the host material 118 and the guest material 119.

[0147] The light-emitting layer 113 can be formed by methods such as vapor deposition (including vacuum vapor deposition), inkjet method, coating method, gravure printing, etc. Also, in addition to the materials described above, it may have inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.).

[0148] ≪Hole Injection Layer≫ The hole injection layers (111, 111a, 111b) are layers that inject holes from the first electrode 101, which is an anode, and the charge generation layers (106, 106a, 106b) into the organic compound layers (103, 103a, 103b), and are layers containing an organic acceptor material and a material with high hole injection properties.

[0149] The positive hole injection layer (111, 111a, 111b) has a function of promoting hole injection by reducing the hole injection barrier from one of the pair of electrodes (the first electrode 101 or the second electrode 102), and is formed of, for example, a transition metal oxide, a phthalocyanine derivative, or an aromatic amine. Examples of the transition metal oxide include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. Examples of the phthalocyanine derivative include phthalocyanine and metal phthalocyanine. Examples of the aromatic amine include benzidine derivatives and phenylenediamine derivatives. A polymer compound such as polythiophene or polyaniline can also be used, and for example, poly(ethylenedioxythiophene) / polystyrene sulfonic acid, which is a self-doped polythiophene, is a typical example thereof.

[0150] As the positive hole injection layer (111, 111a, 111b), a layer having a composite material of a hole transporting material and a material showing electron accepting property with respect to this can also be used. Alternatively, a laminate of a layer containing a material showing electron accepting property and a layer containing a hole transporting material may be used. Charge transfer is possible between these materials in a steady state or in the presence of an electric field. Examples of the material showing electron accepting property include organic acceptors such as quinodimethane derivatives, chloranil derivatives, or hexaazatriphenylene derivatives. Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F 4 -TCNQ), chloranil, and compounds having an electron-withdrawing group (halogen group or cyano group) such as 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN). Further, a transition metal oxide, for example, an oxide of a metal from Group 4 to Group 8 can be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among them, molybdenum oxide is preferable because it is stable even in the atmosphere, has low hygroscopicity, and is easy to handle.

[0151] As the hole transporting material, a material with higher hole transporting property than electrons can be used, and it is preferably a material having a hole mobility of 1×10 -6 cm 2 / Vs or more. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc., which were exemplified as the hole transporting materials that can be used for the light emitting layer 113, can be used. Further, the hole transporting material may be a polymer compound.

[0152] ≪Hole Transporting Layer≫ The hole transporting layer (112, 112a, 112b) is a layer containing a hole transporting material, and the hole transporting materials exemplified as the materials for the hole injecting layer (111, 111a, 111b) can be used. Since the hole transporting layer (112, 112a, 112b) has a function of transporting the holes injected into the hole injecting layer (111, 111a, 111b) to the light emitting layer (113, 113a, 113b), it preferably has the same or a nearly the same HOMO level as the HOMO level of the hole injecting layer (111, 111a, 111b).

[0153] Further, the hole transporting material is preferably a substance having a hole mobility of 1×10 -6 cm 2 / Vs or more. However, as long as it is a substance with higher hole transporting property than electrons, substances other than these may be used. Note that the layer containing a substance with high hole transporting property may be not only a single layer, but also two or more layers of the layers made of the above substances laminated.

[0154] ≪Electron Transporting Layer≫ The electron transporting layer (114, 114a, 114b) has a function of transporting the electrons injected from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) through the electron injecting layer (115, 115a, 115b) to the light emitting layer 113. As the electron transporting material, a material with higher electron transporting property than holes can be used, and it is 1×10 -6 cm 2It is preferably a material having an electron mobility of 1 / Vs or more. As a compound that easily accepts electrons (a material having electron transporting properties), a compound having a π - electron - deficient heteroaromatic ring skeleton such as a nitrogen - containing heteroaromatic compound, or a metal complex can be used. Specifically, metal complexes having quinoline ligands, benzoquinoline ligands, oxazole ligands, or thiazole ligands, which were mentioned as electron - transporting materials that can be used in the light - emitting layer 113, can be cited. Also, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, triazine derivatives, etc. can be cited. Also, the above - mentioned electron - transporting material is preferably a substance having an electron mobility of 1×10 -6 cm 2 / Vs or more. In addition, as long as it is a substance with higher electron - transporting properties than holes, substances other than the above can be used as the electron - transporting layer. Also, the electron - transporting layer (114, 114a, 114b) may be not only a single layer but also two or more layers of the above - mentioned substances laminated.

[0155] Also, a layer for controlling the movement of electron carriers may be provided between the electron - transporting layer (114, 114a, 114b) and the light - emitting layer (113, 113a, 113b). This is a layer in which a small amount of a substance with high electron - trapping properties is added to a material with high electron - transporting properties as described above, and by suppressing the movement of electron carriers, it becomes possible to adjust the carrier balance. Such a configuration has a great effect on suppressing problems (for example, a decrease in element lifetime) caused by electrons passing through the light - emitting layer.

[0156] ≪Electron injection layer≫ The electron injection layers (115, 115a, 115b) have a function of promoting electron injection by reducing the electron injection barrier from the second electrode 102. For example, Group 1 metals, Group 2 metals, or their oxides, halides, carbonates, etc. can be used. Also, a composite material of the electron transporting material shown above and a material exhibiting electron donating properties can be used. Examples of materials exhibiting electron donating properties include Group 1 metals, Group 2 metals, or their oxides. Specifically, lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), lithium oxide (Li 2 O), etc., such as alkali metals, alkaline earth metals, or their compounds can be used. Also, rare earth metal compounds such as erbium fluoride (ErF 3 ) can be used. Also, electrides may be used for the electron injection layer 115. Examples of such electrides include substances obtained by adding electrons at a high concentration to a mixed oxide of calcium and aluminum. Also, substances that can be used in the electron transport layers (114, 114a, 114b) may be used for the electron injection layers (115, 115a, 115b).

[0157] In addition, a composite material formed by mixing an organic compound and an electron donor may be used for the electron injection layer (115, 115a, 115b). Since electrons are generated in the organic compound by the electron donor, such a composite material is excellent in electron injection property and electron transport property. In this case, the organic compound is preferably a material excellent in transporting the generated electrons. Specifically, for example, the substances (such as metal complexes or heteroaromatic compounds) constituting the above-described electron transport layer 114 can be used. As the electron donor, any substance that exhibits electron-donating properties to the organic compound may be used. Specifically, an alkali metal, an alkaline earth metal, or a rare earth metal is preferable, and examples include lithium, sodium, cesium, magnesium, calcium, erbium, ytterbium, etc. Also, an alkali metal oxide or an alkaline earth metal oxide is preferable, and examples include lithium oxide, calcium oxide, barium oxide, etc. Further, a Lewis base such as magnesium oxide can also be used. Also, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can be used.

[0158] Note that the above-described light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer can be formed by methods such as vapor deposition (including vacuum vapor deposition), inkjet method, coating method, gravure printing, etc. Further, in addition to the above-described materials, inorganic compounds such as quantum dots or polymer compounds (such as oligomers, dendrimers, polymers, etc.) may be used for the above-described light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer.

[0159] Note that as the quantum dots, colloidal quantum dots, alloy-type quantum dots, core-shell type quantum dots, core-type quantum dots, etc. may be used. Also, quantum dots containing element groups of Group 2 and Group 16, Group 13 and Group 15, Group 13 and Group 17, Group 11 and Group 17, or Group 14 and Group 15 may be used. Alternatively, quantum dots having elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), aluminum (Al), etc. may be used.

[0160] ≪Pair of Electrodes≫ The first electrode 101 and the second electrode 102 have a function as an anode or a cathode of the light-emitting device. The first electrode 101 and the second electrode 102 can be formed using a metal, an alloy, a conductive compound, and mixtures thereof, or a laminate, etc.

[0161] It is preferable that one of the first electrode 101 or the second electrode 102 is formed of a conductive material having a function of reflecting light. Examples of the conductive material include aluminum (Al) or an alloy containing Al. Examples of the alloy containing Al include an alloy containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), such as an alloy containing Al and Ti, or an alloy containing Al, Ni, and La. Aluminum has a low resistance value and a high light reflectance. In addition, since aluminum is abundant in the earth's crust and inexpensive, the manufacturing cost of the light-emitting device using aluminum can be reduced. Also, silver (Ag), or an alloy containing Ag and N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), or gold (Au)) can be used. Examples of the alloy containing silver include an alloy containing silver, palladium, and copper, an alloy containing silver and copper, an alloy containing silver and magnesium, an alloy containing silver and nickel, an alloy containing silver and gold, an alloy containing silver and ytterbium, etc. In addition, transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium can be used.

[0162] In addition, the light emitted from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Therefore, at least one of the first electrode 101 and the second electrode 102 is preferably formed of a conductive material having a function of transmitting light. As the conductive material, the transmittance of visible light is 40% or more and 100% or less, preferably 60% or more and 100% or less, and its resistivity is 1×10 -2 Ω·cm or less.

[0163] In addition, either one or both of the first electrode 101 and the second electrode 102 may be formed of a conductive material having a function of transmitting light and a function of reflecting light. As the conductive material having a function of transmitting light, the transmittance of visible light is 40% or more and 100% or less, preferably 60% or more and 100% or less, and its resistivity is 1×10 -2 Ω·cm or less. For example, it can be formed by using one or more of a conductive metal, alloy, conductive compound, etc. Specifically, for example, indium tin oxide (Indium Tin Oxide, hereinafter ITO), indium tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium zinc oxide, indium tin oxide containing titanium, indium titanate, indium oxide containing tungsten oxide and zinc oxide, etc. Metal oxides can be used. In addition, a metal thin film having a light-transmitting degree (preferably a thickness of 1 nm or more and 30 nm or less) can be used. As the metal, for example, Ag, or alloys such as Ag and Al, Ag and Mg, Ag and Au, Ag and Yb, etc. can be used.

[0164] In addition, in this specification and the like, the material having the function of transmitting light may be any material that has the function of transmitting visible light and has conductivity. For example, in addition to the oxide conductor typified by ITO as described above, it includes oxide semiconductors or organic conductors containing organic substances. Examples of the organic conductor containing an organic substance include a composite material formed by mixing an organic compound and an electron donor, a composite material formed by mixing an organic compound and an electron acceptor, and the like. Also, an inorganic carbon-based material such as graphene may be used. Further, the resistivity of the material is preferably 1×10 5 Ω·cm or less, more preferably 1×10 4 Ω·cm or less.

[0165] Also, one or both of the first electrode 101 and the second electrode 102 may be formed by laminating a plurality of the above materials.

[0166] In addition, in order to improve the light extraction efficiency, a material having a higher refractive index than the electrode may be formed in contact with the electrode having the function of transmitting light. Such a material may be any material that has the function of transmitting visible light, and may or may not have conductivity. For example, in addition to the oxide conductor as described above, oxide semiconductors and organic substances are included. Examples of the organic substance include the materials exemplified for the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, or electron injection layer. Also, a metal thin film through which light can pass can be used, and a plurality of layers of 2 nm to 20 nm may be laminated.

[0167] When the first electrode 101 or the second electrode 102 has the function of a cathode, it preferably has a material with a small work function (3.8 eV or less). For example, elements belonging to Group 1 or Group 2 of the periodic table (alkali metals such as lithium, sodium, cesium, etc., alkaline earth metals such as calcium, strontium, etc., magnesium, etc.), alloys containing these elements (for example, Ag and Mg, Al and Li), rare earth metals such as europium (Eu), Yb, alloys containing these rare earth metals, aluminum, alloys containing silver, etc. can be used.

[0168] When using the first electrode 101 or the second electrode 102 as the anode, it is preferable to use a material with a large work function (4.0 eV or more).

[0169] Also, the first electrode 101 and the second electrode 102 may be a laminate of a conductive material having a function of reflecting light and a conductive material having a function of transmitting light. In that case, the first electrode 101 and the second electrode 102 are preferable because they can have a function of adjusting the optical distance so as to resonate light of a desired wavelength from each light-emitting layer and strengthen the light of that wavelength.

[0170] As the film formation method of the first electrode 101 and the second electrode 102, a sputtering method, a vapor deposition method, a printing method, a coating method, an MBE (Molecular Beam Epitaxy) method, a CVD method, a pulsed laser deposition method, an ALD (Atomic Layer Deposition) method, etc. can be appropriately used.

[0171] ≪Charge Generation Layer≫ When a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102, the charge generation layer 106 has a function of injecting electrons into one organic compound layer (103a or 103b) and injecting holes into the other organic compound layer (103b or 103a). Note that the charge generation layer 106 may be a configuration in which an electron acceptor is added to a hole transporting material (also referred to as a P-type layer), or a configuration in which an electron donor is added to an electron transporting material (also referred to as an electron injection buffer layer). Also, both of these configurations may be laminated. Furthermore, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. By forming the charge generation layer 106 having a P-type layer and an electron injection buffer layer, an increase in the driving voltage when the organic compound layers are laminated can be suppressed.

[0172] In the charge generation layer 106, when a configuration (P-type layer) is adopted in which an electron acceptor is added to a hole transporting material that is an organic compound, as the hole transporting material, the materials shown in this embodiment can be used. Further, as the electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F 4 -TCNQ), chloranil, etc. can be cited. Further, metal oxides belonging to Groups 4 to 8 in the periodic table of elements can be cited. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be cited. In addition, the acceptor materials described above may be used. Further, it may be used as a mixed film formed by mixing the materials constituting the P-type layer, or single films containing the respective materials may be laminated.

[0173] In the charge generation layer 106, when a configuration (electron injection buffer layer) is adopted in which an electron donor is added to an electron transporting material, as the electron transporting material, the materials shown in this embodiment can be used. Further, as the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Group 2 or Group 13 in the periodic table of elements, and its oxide and carbonate can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li 2 O), cesium carbonate, etc. are preferably used. Further, an organic compound such as tetrathianaphthacene may be used as the electron donor.

[0174] When an electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer is preferably between the LUMO level of the acceptor substance in the P-type layer and the LUMO level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level in the substance having electron transport properties used for the electron relay layer is preferably -5.0 eV or higher, more preferably -5.0 eV or higher and -3.0 eV or lower. In addition, as the substance having electron transport properties used for the electron relay layer, it is preferable to use a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0175] In addition, in Fig. 2(D), a configuration in which two organic compound layers 103 are laminated is shown, but a laminated structure of three or more organic compound layers may be used by providing a charge generation layer between different organic compound layers.

[0176] ≪Cap Layer≫ Although not shown in Figs. 2(A) to 2(E), a cap layer may be provided on the second electrode 102 of the light-emitting device. For example, a material having a high refractive index can be used for the cap layer. By providing the cap layer on the second electrode 102, the light extraction efficiency of the light emitted from the second electrode 102 can be improved.

[0177] Specific examples of materials that can be used for the cap layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), and the like.

[0178] ≪Substrate≫ In addition, the light-emitting device according to one aspect of the present invention may be fabricated on a substrate made of glass, plastic, or the like. As for the order of fabrication on the substrate, it may be laminated in order from the side of the first electrode 101 or from the side of the second electrode 102.

[0179] As the substrate on which the light-emitting device according to one aspect of the present invention can be formed, for example, glass, quartz, plastic, or the like can be used. A flexible substrate may also be used. A flexible substrate is a substrate that can be bent (flexible), and examples include plastic substrates made of polycarbonate, polyarylate, and the like. In addition, films, inorganic vapor deposition films, or the like can also be used. As long as it functions as a support in the manufacturing process of the light-emitting device and the optical element, other materials may be used. Alternatively, as long as it has a function of protecting the light-emitting device and the optical element, it may be used.

[0180] For example, in this specification and the like, a light-emitting device can be formed using various substrates. The type of substrate is not particularly limited. As an example of the substrate, a semiconductor substrate (e.g., a single-crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless-steel substrate, a substrate having a stainless-steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible substrate, a laminated film, a cellulose nanofiber (CNF) containing a fibrous material, paper, or a base film, etc. are available. As an example of the glass substrate, there are barium borosilicate glass, aluminoborosilicate glass, or soda-lime glass, etc. Examples of the flexible substrate, the laminated film, the base film, etc. include the following. For example, plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE) are available. Or, as an example, there is an acrylic resin, etc. Or, as an example, there are polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride, etc. Or, as an example, there are resins such as polyamide resin, polyimide resin, aramid resin, or epoxy resin, an inorganic vapor deposition film, or papers, etc.

[0181] Also, as the substrate, a flexible substrate can be used, and a light-emitting device may be directly formed on the flexible substrate. Or, a release layer may be provided between the substrate and the light-emitting device. The release layer can be used to separate from the substrate after partially or completely completing the light-emitting device thereon and transfer it to another substrate. At that time, the light-emitting device can also be transferred to a substrate with poor heat resistance or a flexible substrate. Note that, for the above-mentioned release layer, for example, a configuration of a laminated structure of an inorganic film of a tungsten film and a silicon oxide film, and a configuration in which a resin film such as polyimide is formed on the substrate can be used.

[0182] That is, a light-emitting device may be formed using a certain substrate, and then the light-emitting device may be transferred to another substrate and disposed on the other substrate. As an example of the substrate to which the light-emitting device is transferred, in addition to the substrates described above, there are cellophane substrates, stone substrates, wood substrates, cloth substrates (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester), or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), leather substrates, or rubber substrates. By using these substrates, a light-emitting device that is difficult to break, a light-emitting device with high heat resistance, a light-emitting device with reduced weight, or a light-emitting device with reduced thickness can be obtained.

[0183] Further, for example, a field effect transistor (FET) may be formed on the above-described substrate, and a light-emitting device may be fabricated on an electrode electrically connected to the FET. Thereby, an active matrix type display device that controls the driving of the light-emitting device by the FET can be fabricated.

[0184] In addition, in this embodiment, one aspect of the present invention has been described. Or, in other embodiments, one aspect of the present invention is described. However, one aspect of the present invention is not limited to these. That is, in this embodiment and other embodiments, since various aspects of the invention are described, one aspect of the present invention is not limited to a specific aspect. For example, as one aspect of the present invention, an example when applied to a light-emitting device has been shown, but one aspect of the present invention is not limited to this. For example, in some cases or depending on the situation, one aspect of the present invention may not be applied to a light-emitting device. Or, for example, in one aspect of the present invention, it has a first organic compound, a second organic compound, and a guest material having a function capable of converting triplet excitation energy into light emission, and the LUMO level of the first organic compound is lower than the LUMO level of the second organic compound, and the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound. An example of this case has been shown, but one aspect of the present invention is not limited to this. In some cases or depending on the situation, in one aspect of the present invention, for example, the LUMO level of the first organic compound may not be lower than the LUMO level of the second organic compound. Or, the HOMO level of the first organic compound may not be lower than the HOMO level of the second organic compound. Or, for example, in one aspect of the present invention, an example in which the first organic compound and the second organic compound form an exciplex has been shown, but one aspect of the present invention is not limited to this. In some cases or depending on the situation, in one aspect of the present invention, for example, the first organic compound and the second organic compound may not form an exciplex. Or, for example, in one aspect of the present invention, an example in which the LUMO level of the guest material is higher than the LUMO level of the first organic compound and the HOMO level of the guest material is lower than the HOMO level of the second organic compound has been shown, but one aspect of the present invention is not limited to this. In some cases or depending on the situation, in one aspect of the present invention, for example, the LUMO level of the guest material may not be higher than the LUMO level of the first organic compound. Or, the HOMO level of the guest material may not be lower than the HOMO level of the second organic compound.

[0185] As described above, the configuration shown in the present embodiment can be used in appropriate combination with the configuration shown in other embodiments.

[0186] (Embodiment 3) In the present embodiment, the light-emitting device 1000 according to one aspect of the present invention will be described in detail. In this specification and the like, the light-emitting device may be referred to as a display device.

[0187] As shown in FIG. 3(A), the light-emitting device 1000 includes a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0188] In this specification and the like, for example, when describing matters common to the sub-pixel 110R, the sub-pixel 110G, and the sub-pixel 110B, they may be described by referring to them as the sub-pixel 110. For other components distinguished by alphabets, when describing matters common to them, symbols with omitted alphabets may be used for description.

[0189] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. Thereby, an image can be displayed on the pixel portion 177. In the present embodiment, three-color sub-pixels of red (R), green (G), and blue (B) are described as an example, but other combinations of sub-pixels of different colors may also be used. Also, the number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include four-color sub-pixels of R, G, B, and white (W), four-color sub-pixels of R, G, B, and yellow (Y), and four sub-pixels of R, G, B, and infrared light (IR).

[0190] In this specification and the like, the row direction may be referred to as the X direction and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0191] In FIG. 3(A), an example is shown in which sub-pixels of different colors are arranged side by side in the X direction, and sub-pixels of the same color are arranged side by side in the Y direction. Note that sub-pixels of different colors may be arranged side by side in the Y direction, and sub-pixels of the same color may be arranged side by side in the X direction.

[0192] Outside the pixel portion 177, a connection portion 140 may be provided, and a region 141 may be provided. The region 141 is provided between the pixel portion 177 and the connection portion 140. An organic compound layer 103 is provided in the region 141. Further, a conductive layer 151C is provided in the connection portion 140.

[0193] In FIG. 3(A), an example is shown in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. Further, the region 141 and the connection portion 140 may be singular or plural.

[0194] FIG. 3(B) is an example of a cross-sectional view between the dashed-dotted line A1 - A2 in FIG. 3(A). As shown in FIG. 3(B), the light-emitting device 1000 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). Openings reaching the conductive layer 172 are provided in the insulating layer 175, the insulating layer 174, and the insulating layer 173, and plugs 176 are provided so as to fill the openings.

[0195] In the pixel portion 177, a light-emitting device 130 is provided on the insulating layer 175 and the plug 176. Further, a protective layer 131 is provided so as to cover the light-emitting device 130. A substrate 120 is bonded by a resin layer 122 on the protective layer 131. Further, it is preferable that an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0196] In FIG. 3(B), a plurality of cross-sections of the inorganic insulating layer 125 and the insulating layer 127 are shown. However, when the light-emitting device 1000 is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are each connected into one. That is, the inorganic insulating layer 125 and the insulating layer 127 are preferably insulating layers having openings on the first electrode.

[0197] In FIG. 3(B), light-emitting devices 130R, 130G, and 130B are shown as the light-emitting device 130. The light-emitting devices 130R, 130G, and 130B are assumed to emit light of different colors. For example, the light-emitting device 130R can emit red light, the light-emitting device 130G can emit green light, and the light-emitting device 130B can emit blue light. Further, the light-emitting device 130R, 130G, or 130B may emit other visible light or infrared light.

[0198] The display device according to one aspect of the present invention can be a top emission type that emits light in a direction opposite to the substrate on which the light-emitting device is formed, for example. Note that the display device according to one aspect of the present invention may be a bottom emission type.

[0199] Examples of the light-emitting substance included in the light-emitting device 130 include organic compounds such as a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material), or an organometallic complex according to one aspect of the present invention. Further, an inorganic compound such as a quantum dot may be used.

[0200] The light-emitting device 130R has a configuration as shown in Embodiment 1 and Embodiment 2. It has a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer 104. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the organic compound layer 103R during processing. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. Also, when the common layer 104 is not provided, the organic compound layer 103R corresponds to the organic compound layer 103 in Embodiment 1 and Embodiment 2. When the common layer 104 is provided, the laminated structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 1 and Embodiment 2.

[0201] The light-emitting device 130G has a configuration as shown in Embodiment 1 and Embodiment 2. It has a first electrode (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer 104. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the organic compound layer 103G during processing. Also, when the common layer 104 is not provided, the organic compound layer 103G corresponds to the organic compound layer 103 in Embodiment 1 and Embodiment 2. When the common layer 104 is provided, the laminated structure of the organic compound layer 103G and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 1 and Embodiment 2.

[0202] The light-emitting device 130B has the configuration as shown in Embodiment 1 and Embodiment 2. It has a first electrode (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer 104. Note that the common layer 104 may or may not be provided, but it is preferable to provide it because it can reduce damage to the organic compound layer 103B during processing. Also, when the common layer 104 is not provided, the organic compound layer 103B corresponds to the organic compound layer 103 in Embodiment 1 and Embodiment 2. When the common layer 104 is provided, the laminated structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 1 and Embodiment 2.

[0203] Of the pixel electrode and the common electrode that the light-emitting device has, one functions as an anode and the other functions as a cathode. Hereinafter, unless otherwise specified, it will be described assuming that the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0204] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent in an island shape for each light-emitting device or for each emission color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, it is possible to suppress the leakage current between adjacent light-emitting devices 130 even in a high-definition light-emitting device. Thereby, crosstalk can be prevented, and a light-emitting device with extremely high contrast can be realized. In particular, a light-emitting device with high current efficiency at low luminance can be realized.

[0205] The island-shaped organic compound layer 103 is formed by forming an EL film and processing the EL film using a lithography method.

[0206] Also, in the light-emitting device according to one aspect of the present invention, it is preferable that the first electrode (pixel electrode) of the light-emitting device has a stacked structure. For example, in the example shown in FIG. 3(B), the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152. For example, when the light-emitting device 1000 is a top emission type and the pixel electrode of the light-emitting device 130 functions as an anode, the conductive layer 151 is preferably a layer having a high reflectance for visible light, and the conductive layer 152 is preferably a layer having, for example, visible light transmissivity and a large work function. When the light-emitting device 1000 is a top emission type, the higher the reflectance of the pixel electrode for visible light, the higher the extraction efficiency of the light emitted from the organic compound layer 103 can be. Further, when the pixel electrode functions as an anode, the larger the work function of the pixel electrode, the easier the injection of holes into the organic compound layer 103. From the above, by forming the pixel electrode of the light-emitting device 130 into a stacked structure of a conductive layer 151 having a high reflectance for visible light and a conductive layer 152 having a large work function, the light-emitting device 130 can be made into a light-emitting device having high light extraction efficiency and low driving voltage.

[0207] When the conductive layer 151 is a layer having a high reflectance for visible light, the reflectance of the conductive layer 151 for visible light is preferably, for example, 40% or more and 100% or less, and more preferably 70% or more and 100% or less. Further, when the conductive layer 152 is an electrode having visible light transmissivity, the transmittance for visible light is preferably, for example, 40% or more.

[0208] Here, when the pixel electrode has a stacked structure composed of a plurality of layers, for example, the pixel electrode may be deteriorated due to a reaction between the plurality of layers. For example, when a film formed after the formation of the pixel electrode is removed by a wet etching method, galvanic corrosion may occur due to the chemical solution coming into contact with the pixel electrode.

[0209] Therefore, in the light-emitting device 1000 of the present embodiment, as shown in FIG. 3(B), it is preferable to form an insulating layer 156 on the side surfaces of the conductive layer 151 and the conductive layer 152. Thereby, even when removing the film formed after forming the pixel electrode having, for example, the conductive layer 151 and the conductive layer 152 by the wet etching method, it is possible to suppress the chemical solution from contacting the conductive layer 151. Therefore, for example, the occurrence of galvanic corrosion on the pixel electrode can be suppressed. Therefore, since the light-emitting device 1000 can be manufactured by a method with a high yield, it can be a low-cost light-emitting device. In addition, since the occurrence of defects in the light-emitting device 1000 can be suppressed, the light-emitting device 1000 can be a highly reliable light-emitting device.

[0210] As the conductive layer 151, for example, a metal material can be used. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys containing these appropriately combined can also be used.

[0211] As the conductive layer 152, an oxide having any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon, etc. It is preferable to use a conductive oxide containing any one or more of them. In particular, indium tin oxide containing silicon has a large work function, for example, the work function is 4.0 eV or more, so it can be suitably used as the conductive layer 152.

[0212] The conductive layer 151 may have a laminated structure of a plurality of layers having different materials, and the conductive layer 152 may also have a laminated structure of a plurality of layers having different materials. In this case, the conductive layer 151 may have a layer using a material that can be used for the conductive layer 152 such as a conductive oxide, and the conductive layer 152 may also have a layer using a material that can be used for the conductive layer 151 such as a metal material. For example, when the conductive layer 151 has a laminated structure of two or more layers, the layer in contact with the conductive layer 152 can be a layer using a material that can be used for the conductive layer 152.

[0213] Note that the end portion of the conductive layer 151 may have a tapered shape. Specifically, by having the end portion of the conductive layer 151 have a tapered shape with a taper angle of less than 90°, the covering property of the structure provided along the side surface of the conductive layer 151 can be enhanced.

[0214] FIG. 4(A) shows a diagram in the case where the conductive layer 151 has a laminated structure of a plurality of layers containing different materials. As shown in FIG. 4(A), the conductive layer 151 has a configuration including a conductive layer 151a, a conductive layer 151b on the conductive layer 151a, and a conductive layer 151c on the conductive layer 151b. That is, the conductive layer 151 shown in FIG. 4(A) has a three-layer laminated structure. Thus, when the conductive layer 151 has a laminated structure of a plurality of layers, the reflectance of at least one of the layers constituting the conductive layer 151 with respect to visible light may be made higher than the reflectance of the conductive layer 152 with respect to visible light.

[0215] In the example shown in FIG. 4(A), the conductive layer 151b is configured to be sandwiched between the conductive layer 151a and the conductive layer 151c. It is preferable to use a material that is less likely to deteriorate than the conductive layer 151b for the conductive layer 151a and the conductive layer 151c. For example, for the conductive layer 151a, a material in which the occurrence of migration due to contact with the insulating layer 175 is less likely to occur than in the conductive layer 151b can be used. Also, for the conductive layer 151c, a material that is less likely to oxidize than the conductive layer 151b and has a lower electrical resistivity of the oxide than the oxide of the material used for the conductive layer 151b can be used.

[0216] As described above, by configuring the conductive layer 151b to be sandwiched between the conductive layer 151a and the conductive layer 151c, the range of material selection for the conductive layer 151b can be widened. As a result, for example, the conductive layer 151b can be made into a layer with a higher reflectance to visible light than at least one of the conductive layer 151a and the conductive layer 151c. For example, aluminum can be used for the conductive layer 151b. Note that an alloy containing aluminum may be used for the conductive layer 151b. Also, as the conductive layer 151a, titanium can be used, which has a lower reflectance to visible light compared to aluminum but is less likely to cause migration than aluminum even when in contact with the insulating layer 175. Furthermore, as the conductive layer 151c, titanium can be used, which has a lower reflectance to visible light compared to aluminum but is less likely to oxidize than aluminum and has an oxide resistivity lower than that of aluminum oxide.

[0217] Also, silver or an alloy containing silver may be used for the conductive layer 151c. Silver has the property of having a higher reflectance to visible light than titanium. Furthermore, silver has the property of being less likely to oxidize than aluminum and the resistivity of silver oxide is lower than that of aluminum oxide. As described above, when silver or an alloy containing silver is used for the conductive layer 151c, the reflectance of the conductive layer 151 to visible light can be suitably increased while suppressing an increase in the electrical resistance of the pixel electrode due to oxidation of the conductive layer 151b. Here, as the alloy containing silver, for example, an alloy of silver, palladium, and copper (also denoted as Ag-Pd-Cu, APC) can be applied. Note that when silver or an alloy containing silver is used for the conductive layer 151c and aluminum is used for the conductive layer 151b, the reflectance of the conductive layer 151c to visible light can be made higher than the reflectance of the conductive layer 151b to visible light. Here, silver or an alloy containing silver may be used for the conductive layer 151b. Also, silver or an alloy containing silver may be used for the conductive layer 151a.

[0218] On the one hand, the film using titanium is superior in processability by etching to the film using silver. Therefore, by using titanium as the conductive layer 151c, the conductive layer 151c can be easily formed. Note that the film using aluminum is also superior in processability by etching to the film using silver.

[0219] As described above, by forming the conductive layer 151 into a laminated structure of a plurality of layers, the characteristics of the light-emitting device can be improved. For example, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency and high reliability.

[0220] Here, when a microcavity structure is applied to the light-emitting device 130, if silver, which is a material with a high reflectance for visible light, or an alloy containing silver is used as the conductive layer 151c, the light extraction efficiency of the light-emitting device 1000 can be suitably increased.

[0221] As described above, it is preferable that the side surface of the conductive layer 151 has a tapered shape. Specifically, it is preferable that the side surface of the conductive layer 151 has a tapered shape with a taper angle of less than 90°. For example, in the conductive layer 151 having the configuration shown in FIG. 4(A), it is preferable that at least one side surface of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c has a tapered shape.

[0222] The conductive layer 151 shown in FIG. 4(A) can be formed using a lithography method. Specifically, first, a conductive film to be the conductive layer 151a, a conductive film to be the conductive layer 151b, and a conductive film to be the conductive layer 151c are formed in order. Next, a resist mask is formed on the conductive film to be the conductive layer 151c. Then, the conductive film in the region that does not overlap with the resist mask is removed using, for example, an etching method. Here, by processing the conductive film under conditions where the resist mask is likely to recede (shrink) as compared with the case where the conductive layer 151 is formed so that the side surface does not have a tapered shape, that is, the side surface is perpendicular, the side surface of the conductive layer 151 can be made into a tapered shape.

[0223] Here, when the conductive film is processed under conditions where the resist mask is likely to recede (shrink), the conductive film may be more likely to be processed in the horizontal direction. That is, the etch anisotropy may be higher than when the conductive layer 151 is formed such that the side surfaces are perpendicular.

[0224] Also, when the conductive layer 151 has a laminated structure of a plurality of layers made of different materials, the ease of horizontal processing may be different between the plurality of layers. For example, the ease of horizontal processing may be different between the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c.

[0225] In this case, after processing the conductive film, the side surface of the conductive layer 151b may be located inside the side surfaces of the conductive layer 151a and the conductive layer 151c, forming a protrusion. As a result, the coverage of the conductive layer 152 over the conductive layer 151 may decrease, and there may be a risk of step discontinuity in the conductive layer 152.

[0226] Therefore, it is preferable to provide the insulating layer 156 as shown in FIG. 4(A). FIG. 4(A) shows an example in which the insulating layer 156 is provided on the conductive layer 151a so as to have a region overlapping the side surface of the conductive layer 151b. This can suppress the occurrence of step discontinuity or thinning of the conductive layer 152 due to the protrusion, thereby suppressing connection failure or an increase in driving voltage.

[0227] Note that in FIG. 4(A), a structure in which the side surface of the conductive layer 151b is entirely covered by the insulating layer 156 is illustrated, but a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156. Similarly, in the pixel electrode having the configuration shown hereinafter, a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156.

[0228] When the conductive layer 151 has the configuration shown in FIG. 4(A), the conductive layer 152 is provided to cover the conductive layer 151a, the conductive layer 151b, the conductive layer 151c, and the insulating layer 156 and to be electrically connected to the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Thereby, even when removing the film formed after the formation of the conductive layer 152 by the wet etching method, for example, it is possible to prevent the chemical solution from coming into contact with any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Therefore, corrosion can be suppressed in any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Therefore, the light-emitting device 1000 can be manufactured by a method with a high yield. In addition, the occurrence of defects can be suppressed, and the light-emitting device 1000 can be a highly reliable light-emitting device.

[0229] Here, as shown in FIG. 4(A), the insulating layer 156 preferably has a curved surface. Thereby, for example, the occurrence of steps in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where the side surface of the insulating layer 156 is perpendicular (parallel to the Z direction). Further, even when the insulating layer 156 has a tapered shape on the side surface, specifically, a tapered shape with a taper angle of less than 90°, for example, the occurrence of steps in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where the side surface of the insulating layer 156 is perpendicular. From the above, the light-emitting device 1000 can be manufactured by a method with a high yield. In addition, the occurrence of defects can be suppressed, and the light-emitting device 1000 can be a highly reliable light-emitting device.

[0230] Note that in FIG. 4(A), the side surface of the conductive layer 151b is shown to be located inside the side surface of the conductive layer 151a, but one aspect of the present invention is not limited to this. For example, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151a. Also, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151c.

[0231] Figures 4(B) to 4(D) show other configurations of the first electrode 101. Figure 4(B) shows a configuration in which, in the first electrode 101 of Figure 4(A), the insulating layer 156 covers not only the side surface of the conductive layer 151b but also the side surfaces of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c.

[0232] Figure 4(C) shows a configuration in which the insulating layer 156 is not provided in the first electrode 101 of Figure 4(A).

[0233] Figure 4(D) shows a configuration in which, in the first electrode 101 of Figure 4(A), the conductive layer 151 does not have a laminated structure and the conductive layer 152 has a laminated structure.

[0234] The conductive layer 152a is a layer having, for example, higher adhesion to the conductive layer 152b than the insulating layer 175. As the conductive layer 152a, for example, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. Thus, peeling of the conductive layer 152b can be suppressed. Also, the conductive layer 152b can be configured not to be in contact with the insulating layer 175.

[0235] The conductive layer 152b is a layer having a higher reflectance with respect to visible light (for example, the reflectance with respect to light of a predetermined wavelength within the range of 400 nm or more and less than 750 nm) than the conductive layer 151, the conductive layer 152a, and the conductive layer 152c. The reflectance of the conductive layer 152b with respect to visible light can be, for example, 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, as the conductive layer 152b, a material having a higher reflectance with respect to visible light than aluminum, for example, can be used. Specifically, as the conductive layer 152b, for example, silver or an alloy containing silver can be used. Examples of the alloy containing silver include an alloy of silver, palladium, and copper (APC). As described above, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency. Note that a metal other than silver may be used as the conductive layer 152b.

[0236] When the conductive layer 151 and the conductive layer 152 function as anodes, the conductive layer 152c is preferably a layer having a large work function. The conductive layer 152c is, for example, a layer having a larger work function than the conductive layer 152b. As the conductive layer 152c, for example, the same material as that used for the conductive layer 152a can be used. For example, a configuration in which the same type of material is used for the conductive layer 152a and the conductive layer 152c can be employed. For example, when indium tin oxide is used for the conductive layer 152a, indium tin oxide can also be used for the conductive layer 152c.

[0237] Note that when the conductive layer 151 and the conductive layer 152 function as cathodes, the conductive layer 152c is preferably a layer having a small work function. The conductive layer 152c is, for example, a layer having a smaller work function than the conductive layer 152b.

[0238] In addition, the conductive layer 152c is preferably a layer having a high transmittance for visible light (for example, the transmittance for light of a predetermined wavelength within the range of 400 nm or more and less than 750 nm). For example, the transmittance of the conductive layer 152c for visible light is preferably higher than the transmittance of the conductive layer 151 and the conductive layer 152b for visible light. For example, the transmittance of the conductive layer 152c for visible light can be 40% or more and 100% or less, preferably 60% or more and 100% or less, more preferably 70% or more and 100% or less, and even more preferably 80% or more and 100% or less. As described above, the amount of light absorbed by the conductive layer 152c among the light emitted by the organic compound layer 103 can be reduced. Further, as described above, the conductive layer 152b under the conductive layer 152c can be a layer having a high reflectance for visible light. Therefore, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency.

[0239] Subsequently, an example of a method for manufacturing the light-emitting device 1000 having the configuration shown in FIG. 3(A) will be described with reference to FIGS. 5 to 10. The light-emitting device included in the light-emitting device 1000 has an organic compound layer formed by a manufacturing process including a treatment using water. By applying the light-emitting device of one aspect of the present invention as the light-emitting device included in the light-emitting device of one aspect of the present invention, it is possible to provide a light-emitting device having a light-emitting device with a reduced driving voltage and high luminous efficiency.

[0240] [Example of manufacturing method] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, or an ALD method. Examples of the CVD method include a plasma enhanced CVD (PECVD) method and a thermal CVD method. Further, one of the thermal CVD methods is a metal organic CVD (MOCVD) method.

[0241] In addition, thin films (such as insulating films, semiconductor films, and conductive films) that make up the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor blade method, slit coating, roll coating, curtain coating, or knife coating.

[0242] In particular, for the fabrication of light-emitting devices, vacuum processes such as vapor deposition methods and solution processes such as spin coating method and inkjet method can be used. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering method, ion plating method, ion beam evaporation method, molecular beam epitaxy method, and vacuum evaporation method, and chemical vapor deposition (CVD) method, etc. In particular, for functional layers (such as hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) contained in the organic compound layer, it can be formed by methods such as vapor deposition method (such as vacuum evaporation method), coating method (such as dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (such as inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexo (letterpress printing) method, gravure method, or microcontact method, etc.).

[0243] In addition, when processing the thin films that make up the display device, for example, it can be processed using a lithography method. Or, the thin film may be processed by a nanoimprint method, sandblasting method, lift-off method, etc. Also, island-shaped thin films may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0244] As the lithography method, for example, a photolithography method can be used. As the photolithography method, there are typically the following two methods. One is a method of forming a resist mask on the thin film to be processed, processing the thin film by, for example, etching, and removing the resist mask. The other is a method of forming a photosensitive thin film and then performing exposure and development to process the thin film into a desired shape.

[0245] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can also be used. Further, exposure may be performed by immersion lithography technology. Also, extreme ultraviolet (EUV) light or X-rays may be used as the light for exposure. Instead of the light used for exposure, an electron beam can also be used. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because extremely fine processing becomes possible. Note that when performing exposure by scanning a beam such as an electron beam, a photomask is not required.

[0246] For etching a thin film, a dry etching method, a wet etching method, a sandblasting method, or the like can be used.

[0247] First, as shown in FIG. 5(A), an insulating layer 171 is formed on a substrate (not shown). Subsequently, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0248] As the substrate, a substrate having heat resistance sufficient to withstand at least subsequent heat treatment can be used. When using an insulating substrate as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, a semiconductor substrate such as an SOI substrate can be used.

[0249] Subsequently, as shown in FIG. 5(A), an opening reaching the conductive layer 172 is formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Subsequently, a plug 176 is formed so as to fill the opening.

[0250] Subsequently, as shown in FIG. 5(A), a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and on the insulating layer 175. For forming the conductive film 151f, for example, a sputtering method or a vacuum evaporation method can be used. Also, as the conductive film 151f, for example, a metal material can be used.

[0251] Subsequently, as shown in FIG. 5(A), a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, is formed on the conductive film 151f. For forming the conductive film 152f, for example, a sputtering method or a vacuum evaporation method can be used. Also, as the conductive film 152f, for example, a conductive oxide can be used. Alternatively, a laminated structure of a film using a metal material and a film using a conductive oxide on the said film can be applied. For example, a laminated structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the said film can be applied.

[0252] Also, for forming the conductive film 152f, the ALD method can be used. In this case, as the conductive film 152f, an oxide having any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. In this case, the introduction of a precursor (generally, sometimes called a precursor or a metal precursor, etc.), the purge of the said precursor, the introduction of an oxidizing agent (generally, sometimes called a reactant, a reactant, or a non-metal precursor, etc.), and the purge of the said oxidizing agent are taken as one cycle, and by repeating the said cycle, the conductive film 152f can be formed. Here, when forming an oxide film containing a plurality of metals such as indium tin oxide as the conductive film 152f, the composition of the metal can be controlled by varying the number of cycles for each type of precursor.

[0253] For example, when forming an indium tin oxide film as the conductive film 152f, after introducing a precursor containing indium, the precursor is purged and an oxidizing agent is introduced to form an In-O film. Next, after introducing a precursor containing tin, the precursor is purged and an oxidizing agent is introduced to form a Sn-O film. Here, by making the number of cycles for forming the In-O film larger than the number of cycles for forming the Sn-O film, the number of indium atoms contained in the conductive film 152f can be made larger than the number of tin atoms.

[0254] Also, for example, when forming a zinc oxide film as the conductive film 152f, a Zn-O film is formed by the above procedure. Also, for example, when forming an aluminum zinc oxide film as the conductive film 152f, a Zn-O film and an Al-O film are each formed by the above procedure. Also, for example, when forming a titanium oxide film as the conductive film 152f, a Ti-O film is formed by the above procedure. Also, for example, when forming an indium tin oxide film containing silicon as the conductive film 152f, an In-O film, a Sn-O film, and a Si-O film are formed by the above procedure. Also, for example, when forming a zinc oxide film containing gallium, a Ga-O film and a Zn-O film are formed by the above procedure.

[0255] As precursors containing indium, for example, triethylindium, trimethylindium, or [1,1,1-trimethyl-N-(trimethylsilyl)amide]-indium can be used. As precursors containing tin, for example, tin chloride, or tetrakis(dimethylamide)tin can be used. As precursors containing zinc, for example, diethylzinc, or dimethylzinc can be used. As precursors containing gallium, for example, triethylgallium can be used. As precursors containing titanium, for example, titanium chloride, tetrakis(dimethylamide)titanium, or tetraisopropyl titanate can be used. As precursors containing aluminum, for example, aluminum chloride, or trimethylaluminum can be used. As precursors containing silicon, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane can be used. Further, as the oxidizing agent, water vapor, oxygen plasma, or ozone gas can be used.

[0256] Subsequently, as shown in FIG. 5(A), a resist mask 191 is formed on the conductive film 151f and the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0257] Subsequently, as shown in FIG. 5(B), for example, the conductive film 151f and the conductive film 152f in a region that does not overlap with the resist mask 191 are removed using, for example, an etching method, specifically, for example, a dry etching method, to form a pixel electrode having a conductive layer 151 and a conductive layer 152. When the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed using a wet etching method. When a part of the conductive film 151f is removed by a dry etching method, a recess may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0258] Note that after processing the conductive film 152f using a lithography method to form the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C, the conductive film 151f may be processed using the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C as masks. Specifically, for example, after forming a resist mask, a part of the conductive film 152f is removed by an etching method. The conductive film 152f can be removed, for example, by a wet etching method. Note that the conductive film 152f may be removed by a dry etching method. Thereafter, the conductive film 151f may be removed by a wet etching method.

[0259] Here, it is preferable to perform a hydrophobization treatment on the conductive layer 152. In the hydrophobization treatment, the surface to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface to be treated can be enhanced. By performing the hydrophobization treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later process can be enhanced, and film peeling can be suppressed. Note that the hydrophobization treatment may not be performed.

[0260] Subsequently, as shown in FIG. 5(C), the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Or, oxygen gas and a Group 18 element such as CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , or He may be used. Or, the resist mask 191 may be removed by wet etching.

[0261] Subsequently, as shown in FIG. 5(D), an insulating film 156f that will later become the insulating layer 156R, insulating layer 156G, insulating layer 156B, insulating layer 156C, and insulating layer 175 is formed on the conductive layer 151R and conductive layer 152R, on the conductive layer 151G and conductive layer 152G, on the conductive layer 151B and conductive layer 152B, on the conductive layer 151C and conductive layer 152C, and on the insulating layer 175. For forming the insulating film 156f, for example, the CVD method, ALD method, sputtering method, or vacuum evaporation method can be used.

[0262] An inorganic material can be used for the insulating film 156f. For the insulating film 156f, for example, an inorganic insulating film such as an insulating oxide film, insulating nitride film, oxynitride insulating film, or nitroxide insulating film can be used. For example, as the insulating film 156f, an insulating oxide film, insulating nitride film, oxynitride insulating film, or nitroxide insulating film containing silicon can be used. For example, silicon oxynitride can be used as the insulating film 156f.

[0263] Subsequently, as shown in FIG. 5(E), the insulating layer 156R, insulating layer 156G, insulating layer 156B, and insulating layer 156C are formed by processing the insulating film 156f. For example, by performing etching substantially uniformly on the upper surface of the insulating film 156f, the insulating layer 156 can be formed. Such uniform etching and flattening is also referred to as etch-back processing. Note that the insulating layer 156 may be formed using a lithography method.

[0264] Subsequently, as shown in FIG. 6(A), an organic compound film 103Rf that will later become the organic compound layer 103R is formed on the conductive layer 152R, on the conductive layer 152G, on the conductive layer 152B, on the insulating layer 156R, on the insulating layer 156G, on the insulating layer 156B, and on the insulating layer 175.

[0265] As shown in FIG. 6(A), an organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask (also referred to as an area mask, a rough metal mask, etc., distinguished from a fine metal mask) for defining a film-forming area, the organic compound film 103Rf can be formed only in a desired region. By adopting a film-forming process using an area mask and a processing process using a resist mask, a light-emitting device can be fabricated through a relatively simple process.

[0266] The organic compound film 103Rf can be formed, for example, by a vapor deposition method, specifically, a vacuum vapor deposition method. Further, the organic compound film 103Rf may be formed by a method such as a transfer method, a printing method, an inkjet method, or a coating method.

[0267] Subsequently, as shown in FIG. 6(A), a sacrificial film 158Rf that will later become the sacrificial layer 158R and a mask film 159Rf that will later become the mask layer 159R are sequentially formed on the organic compound film 103Rf, on the conductive layer 152C, and on the insulating layer 175.

[0268] In the present embodiment, an example of forming a mask film with a two-layer structure of a sacrificial film 158Rf and a mask film 159Rf is shown, but the mask film may have a single-layer structure or a laminated structure of three or more layers. Further, in this specification and the like, the mask layer may be referred to as a sacrificial layer.

[0269] By providing a sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be enhanced.

[0270] For the sacrificial film 158Rf, a film having high resistance to the processing conditions of the organic compound film 103Rf, specifically, a film having a large etching selectivity ratio with respect to the organic compound film 103Rf is used. For the mask film 159Rf, a film having a large etching selectivity ratio with respect to the sacrificial film 158Rf is used.

[0271] Further, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Rf. As the substrate temperature when forming the sacrificial film 158Rf and the mask film 159Rf, typically, they are each 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, still more preferably 100°C or lower, and even more preferably 80°C or lower.

[0272] For the sacrificial film 158Rf and the mask film 159Rf, it is preferable to use a film that can be removed by a wet etching method. By using the wet etching method, the damage applied to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using a dry etching method.

[0273] For the formation of the sacrificial film 158Rf and the mask film 159Rf, for example, a sputtering method, an ALD method (thermal ALD method, PEALD method), a CVD method, or a vacuum evaporation method can be used. Also, it may be formed using the above-described wet film formation method.

[0274] Note that the sacrificial film 158Rf formed in contact with the organic compound film 103Rf is preferably formed using a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, it is preferable to form the sacrificial film 158Rf using an ALD method or a vacuum evaporation method rather than a sputtering method.

[0275] As the sacrificial film 158Rf and the mask film 159Rf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used respectively.

[0276] For the sacrificial film 158Rf and the mask film 159Rf, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing the metal materials can be used respectively. In particular, it is preferable to use low melting point materials such as aluminum or silver. By using a metal material capable of shielding ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf, irradiation of the organic compound film 103Rf with ultraviolet rays can be suppressed, and deterioration of the organic compound film 103Rf can be suppressed, which is preferable.

[0277] In addition, for the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanate (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used respectively.

[0278] Note that instead of the above gallium, an element M (M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used.

[0279] In addition, as the sacrificial film and the mask film, it is preferable to use a film containing a material having light-shielding properties, particularly ultraviolet light-shielding properties. As the material having light-shielding properties, various materials such as metals, insulators, semiconductors, and semimetals having light-shielding properties against ultraviolet rays can be used. However, since part or all of the sacrificial film and the mask film are removed in a later process, it is preferable that the film is processable by etching, and particularly preferable that the processability is good.

[0280] As the sacrificial film and the mask film, for example, using a semiconductor material such as silicon or germanium is preferable because of its high affinity with the semiconductor manufacturing process. Alternatively, an oxide or nitride of the above semiconductor material can be used. Alternatively, a non-metallic material such as carbon or a compound thereof can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, aluminum, or an alloy containing one or more of these can be mentioned. Alternatively, an oxide containing the above metal such as titanium oxide or chromium oxide, or a nitride such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0281] By using a film containing a material having light-shielding properties with respect to ultraviolet rays for the sacrificial film and the mask film, for example, it is possible to suppress the irradiation of ultraviolet rays to the organic compound layer in the exposure process. By suppressing the organic compound layer from being damaged by ultraviolet rays, the reliability of the light-emitting device can be enhanced.

[0282] Note that a film containing a material having light-shielding properties with respect to ultraviolet rays can also exhibit the same effect when used as the material of the inorganic insulating film 125f described later.

[0283] In addition, as the sacrificial film 158Rf and the mask film 159Rf, various inorganic insulating films can be used respectively. In particular, an oxide insulating film is preferable because of its higher adhesion to the organic compound film 103Rf than a nitride insulating film. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Rf and the mask film 159Rf respectively. As the sacrificial film 158Rf and the mask film 159Rf, for example, an aluminum oxide film can be formed using the ALD method. Using the ALD method is preferable because it can reduce damage to the substrate (especially the organic compound layer).

[0284] For example, as the sacrificial film 158Rf, an inorganic insulating film (for example, an aluminum oxide film) formed using the ALD method can be used, and as the mask film 159Rf, an inorganic film (for example, an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used.

[0285] Note that the same inorganic insulating film can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125 to be formed later. For example, an aluminum oxide film formed by ALD can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125. Here, the same film-forming conditions may be applied to the sacrificial film 158Rf and the inorganic insulating layer 125, or different film-forming conditions may be applied to them. For example, by forming the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, the sacrificial film 158Rf can be made into an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the sacrificial film 158Rf is a layer that is mostly or entirely removed in a later process, it is preferably easy to process. For this reason, the sacrificial film 158Rf is preferably formed under conditions where the substrate temperature during film formation is lower than that of the inorganic insulating layer 125.

[0286] An organic material may be used for one or both of the sacrificial film 158Rf and the mask film 159Rf. For example, as the organic material, a material that can be dissolved in a chemically stable solvent may be used for at least the film located at the top of the organic compound film 103Rf. In particular, a material that can be dissolved in water or alcohol can be preferably used. When forming a film of such a material, it is preferably applied by a wet film-forming method in a state of being dissolved in a solvent such as water or alcohol, and then heat treatment is performed to evaporate the solvent. At this time, by performing heat treatment under a reduced pressure atmosphere, the solvent can be removed at a low temperature and in a short time, so thermal damage to the organic compound film 103Rf can be reduced, which is preferable.

[0287] For the sacrificial film 158Rf and the mask film 159Rf, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluororesin such as perfluoropolymer may be used respectively.

[0288] For example, as the sacrificial film 158Rf, an organic film (for example, a PVA film) formed by using either a vapor deposition method or the above-described wet film formation method can be used, and as the mask film 159Rf, an inorganic film (for example, a silicon nitride film) formed by using a sputtering method can be used.

[0289] Subsequently, as shown in FIG. 6(A), a resist mask 190R is formed on the mask film 159Rf. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0290] The resist mask 190R may be fabricated using either a positive resist material or a negative resist material.

[0291] The resist mask 190R is provided at a position overlapping with the conductive layer 152R. The resist mask 190R is preferably also provided at a position overlapping with the conductive layer 152C. Thereby, it is possible to suppress the conductive layer 152C from being damaged during the manufacturing process of the display device. Note that the resist mask 190R may not be provided on the conductive layer 152C. Further, as shown in the cross-sectional view between B1 and B2 in FIG. 6(A), the resist mask 190R is preferably provided so as to cover from the end of the organic compound film 103Rf to the end of the conductive layer 152C (the end on the organic compound film 103Rf side).

[0292] Subsequently, as shown in FIG. 6(B), using the resist mask 190R, a part of the mask film 159Rf is removed to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and on the conductive layer 152C. Thereafter, the resist mask 190R is removed. Subsequently, using the mask layer 159R as a mask (also referred to as a hard mask), a part of the sacrificial film 158Rf is removed to form a sacrificial layer 158R.

[0293] The sacrificial film 158Rf and the mask film 159Rf can each be processed by a wet etching method or a dry etching method. The processing of the sacrificial film 158Rf and the mask film 159Rf is preferably performed by isotropic etching.

[0294] By using the wet etching method, the damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using the dry etching method. When using the wet etching method, for example, it is preferable to use a chemical solution such as a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed liquid thereof.

[0295] In the processing of the mask film 159Rf, since the organic compound film 103Rf is not exposed, the range of selection of the processing method is wider than that of the processing of the sacrificial film 158Rf. Specifically, when using a gas containing oxygen in the etching gas during the processing of the mask film 159Rf, the deterioration of the organic compound film 103Rf can be more suppressed.

[0296] Also, when using the dry etching method in the processing of the sacrificial film 158Rf, the deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen in the etching gas. When using the dry etching method, for example, it is preferable to use a gas containing a Group 18 element such as CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , or He as the etching gas.

[0297] For example, when using an aluminum oxide film formed by ALD as the sacrificial film 158Rf, a part of the sacrificial film 158Rf can be removed by dry etching using CHF 3 and He, or CHF 3 and He and CH 4 . Also, when using an In-Ga-Zn oxide film formed by sputtering as the mask film 159Rf, a part of the mask film 159Rf can be removed by wet etching using dilute phosphoric acid. Or, CH 4Using Ar, a part of the mask film 159Rf may be removed by a dry etching method. Alternatively, a part of the mask film 159Rf can be removed by a wet etching method using diluted phosphoric acid. Further, when using a tungsten film formed by a sputtering method as the mask film 159Rf, SF 6 , CF 4 and O 2 , or CF 4 and Cl 2 and O 2 can be used to remove a part of the mask film 159Rf by a dry etching method.

[0298] The resist mask 190R can be removed in the same manner as the resist mask 191. For example, it can be removed by ashing using oxygen plasma. Alternatively, oxygen gas and CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , or a Group 18 element such as He may be used. Alternatively, the resist mask 190R may be removed by wet etching. At this time, since the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, damage to the organic compound film 103Rf can be suppressed in the process of removing the resist mask 190R. In addition, the range of selection of the method for removing the resist mask 190R can be widened.

[0299] Subsequently, as shown in FIG. 6(B), the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, using the mask layer 159R and the sacrificial layer 158R as a hard mask, a part of the organic compound film 103Rf is removed to form the organic compound layer 103R.

[0300] Thereby, as shown in FIG. 6(B), a stacked structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. Also, the conductive layer 152G and the conductive layer 152B are exposed.

[0301] In FIG. 6(B), an example is shown in which the end portion of the organic compound layer 103R is located inside the end portion of the conductive layer 152R. With this configuration, miniaturization of the pixel becomes possible, and a high-definition display can be created. Although not shown in FIG. 6(B), depending on the etching process, a recess may be formed in a region of the insulating layer 175 that does not overlap with the organic compound layer 103R.

[0302] As described above, it is preferable that the resist mask 190R is provided so as to cover from the end portion of the organic compound layer 103R to the end portion of the conductive layer 152C (the end portion on the organic compound layer 103R side) between the dashed-dotted lines B1 - B2. Thereby, as shown in FIG. 6(B), the sacrificial layer 158R and the mask layer 159R are provided so as to cover from the end portion of the organic compound layer 103R to the end portion of the conductive layer 152C (the end portion on the organic compound layer 103R side) between the dashed-dotted lines B1 - B2. Therefore, for example, it is possible to suppress the exposure of the insulating layer 175 between the dashed-dotted lines B1 - B2. As a result, it is possible to prevent a part of the insulating layer 175, the insulating layer 174, and the insulating layer 173 from being removed by etching or the like and the conductive layer 179 from being exposed. For this reason, it is possible to suppress the conductive layer 179 from being unintentionally electrically connected to other conductive layers. For example, it is possible to suppress a short circuit between the conductive layer 179 and the common electrode 155 formed in a later process.

[0303] The processing of the organic compound film 103Rf is preferably performed by anisotropic etching. In particular, anisotropic dry etching is preferable. Alternatively, wet etching may be used.

[0304] When using the dry etching method, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0305] In addition, a gas containing oxygen may be used as the etching gas. By including oxygen in the etching gas, the etching rate can be increased. Therefore, etching can be performed under low-power conditions while maintaining a sufficiently high etching rate. For this reason, damage to the organic compound film 103Rf can be suppressed. Furthermore, problems such as the adhesion of reaction products generated during etching can be suppressed.

[0306] When using the dry etching method, for example, a gas containing one or more of H 2 , CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , or one or more of the Group 18 elements such as He and Ar is preferably used as the etching gas. Alternatively, it is preferable to use one or more of these and a gas containing oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H 2 and Ar, or a gas containing CF 4 and He can be used as the etching gas. Also, for example, a gas containing CF 4 , He, and oxygen can be used as the etching gas. Also, for example, a gas containing H 2 and Ar, and a gas containing oxygen can be used as the etching gas.

[0307] As described above, in one aspect of the present invention, a resist mask 190R is formed on the mask film 159Rf, and a part of the mask film 159Rf is removed using the resist mask 190R to form the mask layer 159R. Then, using the mask layer 159R as a hard mask, a part of the organic compound film 103Rf is removed to form the organic compound layer 103R. Therefore, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using a lithography method. Note that a part of the organic compound film 103Rf may be removed using the resist mask 190R. Then, the resist mask 190R may be removed.

[0308] Next, for example, it is preferable to perform a hydrophobization treatment on the conductive layer 152G. When processing the organic compound film 103Rf, for example, the surface state of the conductive layer 152G may change to hydrophilicity. By performing a hydrophobization treatment on the conductive layer 152G, for example, the adhesion between the conductive layer 152G and a layer formed in a subsequent process (here, the organic compound layer 103G) can be enhanced, and film peeling can be suppressed. Note that the hydrophobization treatment may not be performed.

[0309] Subsequently, as shown in FIG. 7(A), an organic compound film 103Gf that will later become the organic compound layer 103G is formed on the conductive layer 152G, the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159R, and the insulating layer 175.

[0310] The organic compound film 103Gf can be formed by the same method as the method that can be used to form the organic compound film 103Rf. Also, the organic compound film 103Gf can have the same configuration as the organic compound film 103Rf.

[0311] Subsequently, as shown in FIG. 7(A), a sacrificial film 158Gf that will later become the sacrificial layer 158G and a mask film 159Gf that will later become the mask layer 159G are sequentially formed on the organic compound film 103Gf and on the mask layer 159R. Thereafter, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as the conditions applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190G are the same as the conditions applicable to the resist mask 190R.

[0312] The resist mask 190G is provided at a position overlapping with the conductive layer 152G.

[0313] Subsequently, as shown in FIG. 7(B), using the resist mask 190G, a part of the mask film 159Gf is removed to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Thereafter, the resist mask 190G is removed. Subsequently, using the mask layer 159G as a mask, a part of the sacrificial film 158Gf is removed to form the sacrificial layer 158G. Subsequently, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, using the mask layer 159G and the sacrificial layer 158G as a hard mask, a part of the organic compound film 103Gf is removed to form the organic compound layer 103G.

[0314] As a result, as shown in FIG. 7(B), a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. Also, the mask layer 159R and the conductive layer 152B are exposed.

[0315] Next, for example, it is preferable to perform a hydrophobization treatment on the conductive layer 152B. When processing the organic compound film 103Gf, for example, the surface state of the conductive layer 152B may change to hydrophilic. By performing a hydrophobization treatment on the conductive layer 152B, for example, the adhesion between the conductive layer 152B and a layer formed in a later process (here, the organic compound layer 103B) can be enhanced, and film peeling can be suppressed. Note that the hydrophobization treatment may not be performed.

[0316] Subsequently, as shown in FIG. 7(C), an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layer 152B, on the insulating layer 156R, on the insulating layer 156G, on the insulating layer 156B, on the mask layer 159R, on the mask layer 159G, and on the insulating layer 175.

[0317] The organic compound film 103Bf can be formed by the same method as that used for forming the organic compound film 103Rf. Also, the organic compound film 103Bf can have the same configuration as the organic compound film 103Rf.

[0318] Subsequently, as shown in FIG. 7(C), on the organic compound film 103Bf and on the mask layer 159R, a sacrificial film 158Bf, which will later become the sacrificial layer 158B, and a mask film 159Bf, which will later become the mask layer 159B, are sequentially formed. Thereafter, a resist mask 190B is formed. The materials and formation methods of the sacrificial film 158Bf and the mask film 159Bf are the same as the conditions applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190B are the same as the conditions applicable to the resist mask 190R.

[0319] The resist mask 190B is provided at a position overlapping with the conductive layer 152B.

[0320] Subsequently, as shown in FIG. 7(D), using the resist mask 190B, a part of the mask film 159Bf is removed to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B. Thereafter, the resist mask 190B is removed. Subsequently, using the mask layer 159B as a mask, a part of the sacrificial film 158Bf is removed to form the sacrificial layer 158B. Subsequently, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, using the mask layer 159B and the sacrificial layer 158B as hard masks, a part of the organic compound film 103Bf is removed to form the organic compound layer 103B.

[0321] As a result, as shown in FIG. 7(D), a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. Also, the mask layer 159R and the mask layer 159G are exposed.

[0322] Note that the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are preferably perpendicular or substantially perpendicular to the surface to be formed. For example, the angle formed by the surface to be formed and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0323] As described above, the distance between two adjacent ones of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B formed using the lithography method can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between two opposing end portions of two adjacent ones among the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. By narrowing the distance between the island-shaped organic compound layers in this way, a display device having high fineness and a large aperture ratio can be provided. Also, the distance between the first electrodes between adjacent light-emitting devices can be narrowed and can be, for example, 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less. Note that the distance between the first electrodes between adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0324] Subsequently, as shown in FIG. 8(A), it is preferable to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. Depending on subsequent processes, the sacrificial layer 158R, the sacrificial layer 158G, the sacrificial layer 158B, the mask layer 159R, the mask layer 159G, and the mask layer 159B may remain in the display device. By removing the mask layer 159R, the mask layer 159G, and the mask layer 159B at this stage, it is possible to suppress the remaining of the mask layer 159R, the mask layer 159G, and the mask layer 159B in the display device. For example, when a conductive material is used for the mask layer 159R, the mask layer 159G, and the mask layer 159B, by removing the mask layer 159R, the mask layer 159G, and the mask layer 159B in advance, it is possible to suppress the generation of leakage current and the formation of capacitance due to the remaining mask layer 159R, the mask layer 159G, and the mask layer 159B.

[0325] Note that, in this embodiment, the case of removing the mask layer 159R, the mask layer 159G, and the mask layer 159B is taken as an example for explanation, but the mask layer 159R, the mask layer 159G, and the mask layer 159B may not be removed. For example, when the mask layer 159R, the mask layer 159G, and the mask layer 159B contain a material having light-shielding properties with respect to ultraviolet rays as described above, it is preferable to proceed to the next process without removing them, thereby protecting the organic compound layer from ultraviolet rays.

[0326] For the mask layer removal process, the same method as the mask film processing process can be used. In particular, by using the wet etching method, compared with the case of using the dry etching method, when removing the mask layer, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced.

[0327] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of alcohol include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0328] After removing the mask layer, a drying process may be performed to remove water contained in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, as well as water adsorbed on the surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. For example, heat treatment can be performed under an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be carried out at a temperature of 50°C or higher and 200°C or lower as the substrate temperature, preferably 60°C or higher and 150°C or lower, more preferably 70°C or higher and 120°C or lower. Setting a reduced pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0329] Subsequently, as shown in FIG. 8(B), an inorganic insulating film 125f that will later become the inorganic insulating layer 125 is formed so as to cover the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0330] As described later, an insulating film 127f that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has high affinity for the material used for the insulating film (for example, a photosensitive resin composition containing an acrylic resin). In order to improve the affinity, it is preferable to perform a surface treatment to hydrophobize (or enhance the hydrophobicity of) the upper surface of the inorganic insulating film 125f. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with good adhesion. Note that, as the surface treatment, the aforementioned hydrophobization treatment may be performed.

[0331] Subsequently, as shown in FIG. 8(C), an insulating film 127f that will later become the insulating layer 127 is formed on the inorganic insulating film 125f.

[0332] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a forming method that causes little damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is preferably formed by a forming method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B than the insulating film 127f.

[0333] Also, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. Further, by increasing the substrate temperature during the formation of the inorganic insulating film 125f, even if the film thickness is thin, a film with a low impurity concentration and high barrier properties against at least one of water and oxygen can be obtained.

[0334] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0335] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above range of the substrate temperature.

[0336] The inorganic insulating film 125f is preferably formed using, for example, the ALD method. Using the ALD method is preferable because film formation damage can be reduced and a film with high coating properties can be formed. As the inorganic insulating film 125f, it is preferable to form an aluminum oxide film using, for example, the ALD method.

[0337] In addition, the inorganic insulating film 125f may be formed using a sputtering method, a CVD method, or a PECVD method, which have a higher film formation rate than the ALD method. Thereby, a highly reliable display device can be manufactured with high productivity.

[0338] The insulating film 127f is preferably formed using the above-described wet film formation method. The insulating film 127f is preferably formed, for example, by spin coating using a photosensitive material, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0339] The insulating film 127f is preferably formed using, for example, a resin composition having a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates an acid upon irradiation with light and a compound that generates an acid upon heating can be used. The resin composition may further have one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0340] Further, it is preferable to perform a heat treatment (also referred to as pre-baking) after the formation of the insulating film 127f. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50°C or higher and 200°C or lower, more preferably 60°C or higher and 150°C or lower, and even more preferably 70°C or higher and 120°C or lower. Thereby, the solvent contained in the insulating film 127f can be removed.

[0341] Subsequently, exposure is performed to make a part of the insulating film 127f sensitive to visible light or ultraviolet light. Here, when a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 is not formed in a later process. The insulating layer 127 is formed in a region sandwiched between any two of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. Note that when a negative photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 is formed.

[0342] The width of the insulating layer 127 to be formed later can be controlled by the exposure region of the insulating film 127f. In the present embodiment, processing is performed such that the insulating layer 127 has a portion overlapping the upper surface of the conductive layer 151.

[0343] The light used for exposure preferably includes i-line (wavelength 365 nm). Further, the light used for exposure may include at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0344] Here, by providing an oxygen barrier insulating layer (for example, an aluminum oxide film, etc.) as one or both of the sacrificial layer 158 (sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B) and the inorganic insulating film 125f, the diffusion of oxygen into the organic compound layers 103R, 103G, and 103B can be reduced. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer may be excited, and the reaction with oxygen contained in the atmosphere may be promoted. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an atmosphere containing oxygen, oxygen may bind to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, the binding of oxygen in the atmosphere to the organic compound contained in the organic compound layer can be reduced.

[0345] Subsequently, as shown in FIG. 9(A), development is performed to remove the exposed area of the insulating film 127f and form the insulating layer 127a. The insulating layer 127a is formed in an area sandwiched between any two of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B, and in an area surrounding the conductive layer 152C. Here, when an acrylic resin is used for the insulating film 127f, an alkaline solution can be used as the developer, for example, TMAH can be used.

[0346] Subsequently, residues (so-called scum) during development may be removed. For example, the residues can be removed by performing ashing using oxygen plasma.

[0347] Note that etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may be processed, for example, by ashing using oxygen plasma. Also, even when a non-photosensitive material is used for the insulating film 127f, for example, the height of the surface of the insulating film 127f can be adjusted by such ashing.

[0348] Subsequently, as shown in FIG. 9(B), an etching process is performed using the insulating layer 127a as a mask to remove a part of the inorganic insulating film 125f and reduce the film thickness of a part of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Thereby, an inorganic insulating layer 125 is formed under the insulating layer 127a. Also, the surfaces of the portions where the film thicknesses of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B are thin are exposed. Hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0349] The first etching process can be performed by dry etching or wet etching. Note that when the inorganic insulating film 125f is formed using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is preferable because the first etching process can be performed in a batch.

[0350] By performing etching using the insulating layer 127a with a tapered side surface as a mask, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158R, 158G, and 158B can be made into a tapered shape relatively easily.

[0351] When performing dry etching, it is preferable to use a chlorine-based gas. As the chlorine-based gas, Cl 2 , BCl 3 , SiCl 4 , and CCl 4 etc. can be used alone or in combination of two or more gases. Further, oxygen gas, hydrogen gas, helium gas, argon gas, etc. can be appropriately added to the above chlorine-based gas alone or in combination of two or more gases. By using dry etching, regions with a thin film thickness of the sacrificial layers 158R, 158G, and 158B can be formed with good in-plane uniformity.

[0352] As the dry etching apparatus, a dry etching apparatus having a high-density plasma source can be used. As the dry etching apparatus having a high-density plasma source, for example, an inductively coupled plasma (ICP) etching apparatus can be used. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes can be used. The capacitively coupled plasma etching apparatus having parallel plate electrodes may be configured to apply a high-frequency voltage to one of the parallel plate electrodes. Alternatively, it may be configured to apply a plurality of different high-frequency voltages to one of the parallel plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of the same frequency to each of the parallel plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel plate electrodes.

[0353] Also, when performing dry etching, by-products and the like generated by dry etching may deposit on the upper surface and side surfaces of the insulating layer 127a. Therefore, components contained in the etching gas, components contained in the inorganic insulating film 125f, components contained in the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B may be contained in the insulating layer 127 after the display device is completed.

[0354] Also, it is preferable to perform the first etching process by wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to the case of using the dry etching method. For example, wet etching can be performed using an alkaline solution. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, wet etching can be performed by a paddle method. In addition, when the inorganic insulating film 125f is formed using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is preferable because the above etching process can be performed collectively.

[0355] In the first etching process, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B are not completely removed, and the etching process is stopped in a state where the film thickness has become thin. In this way, by leaving the corresponding sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B on the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is possible to prevent the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B from being damaged in the subsequent process.

[0356] Subsequently, it is preferable to expose the entire substrate and irradiate the insulating layer 127a with visible light or ultraviolet light. The energy density of the exposure is preferably greater than 0 mJ / cm 2 and equal to or less than 800 mJ / cm 2 more preferably greater than 0 mJ / cm 2 and equal to or less than 500 mJ / cm 2It is more preferable to do the following. By performing such exposure after development, it may be possible to improve the transparency of the insulating layer 127a. Also, in some cases, it may be possible to lower the substrate temperature required for the heat treatment that deforms the insulating layer 127a into a tapered shape in a subsequent process.

[0357] Here, as the sacrificial layers 158R, 158G, and 158B, the presence of a barrier insulating layer against oxygen (for example, an aluminum oxide film or the like) can reduce the diffusion of oxygen into the organic compound layers 103R, 103G, and 103B. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer may be excited, and the reaction with oxygen contained in the atmosphere may be promoted. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an atmosphere containing oxygen, oxygen may bind to the organic compound contained in the organic compound layer. By providing the sacrificial layers 158R, 158G, and 158B on the island-shaped organic compound layer, it is possible to reduce the binding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0358] Subsequently, a heat treatment (also referred to as post-bake) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on the side surface (FIG. 9(C)). The heat treatment is performed at a temperature lower than the heat-resistant temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 130°C or lower. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. Also, the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. It is preferable that the substrate temperature in the heat treatment of this step is higher than the heat treatment (pre-bake) after the formation of the insulating film 127f. Thereby, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved.

[0359] In the first etching process, by not completely removing the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, but leaving the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B in a state where their film thicknesses are reduced, it is possible to prevent the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B from being damaged and deteriorated during the heat treatment. Therefore, the reliability of the light-emitting device can be improved.

[0360] Note that depending on the material of the insulating layer 127, and the temperature, time, and atmosphere of the post-bake, a concave curved surface shape may be formed on the side surface of the insulating layer 127. For example, under the post-bake conditions, the higher the temperature or the longer the time, the more likely the shape of the insulating layer 127 is to change, and a concave curved surface shape may be formed.

[0361] Subsequently, as shown in FIG. 10(A), an etching process is performed using the insulating layer 127 as a mask to remove a part of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Note that a part of the inorganic insulating layer 125 may also be removed. Thereby, openings are formed in each of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Note that hereinafter, the etching process using the insulating layer 127 as a mask may be referred to as the second etching process.

[0362] The end portion of the inorganic insulating layer 125 is covered with the insulating layer 127. Further, in FIG. 10(A), an example is shown in which a part of the end portion of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered with the insulating layer 127, and the tapered portion formed by the second etching process is exposed.

[0363] If the first etching process is not performed and the inorganic insulating layer 125 and the sacrificial layer are etched all at once after post-baking, side etching may cause the inorganic insulating layer 125 and the sacrificial layer under the end of the insulating layer 127 to disappear, forming a cavity. Due to the cavity, unevenness occurs on the surface where the common electrode 155 is formed, and the common electrode 155 is likely to have steps. Even if a cavity is formed by side etching of the inorganic insulating layer 125 and the sacrificial layer in the first etching process, the insulating layer 127 can fill the cavity by performing post-baking thereafter. Then, in the second etching process, since the sacrificial layer with a smaller thickness is etched, the amount of side etching is small, and it is difficult to form a cavity. Even if a cavity is formed, it can be made extremely small. Therefore, the surface where the common electrode 155 is formed can be made flatter.

[0364] Note that the insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G. Also, for example, the end of the insulating layer 127 may be in contact with the upper surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, when the developed insulating layer 127a is not exposed, the shape of the insulating layer 127 may easily change.

[0365]

[0366] On the other hand, when performing the second etching process using a wet etching method, for example, due to the problem of adhesion between the organic compound layer 103 and other layers, gaps may form at the interfaces between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and between the organic compound layer 103 and the insulating layer 175. When the chemical solution used in the second etching process penetrates into these gaps and the chemical solution comes into contact with the pixel electrode, if the chemical solution contacts both the conductive layer 151 and the conductive layer 152, the conductive layer with a lower natural potential among the conductive layer 151 and the conductive layer 152 may corrode due to galvanic corrosion. For example, when aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, the conductive layer 152 may corrode. From the above, the yield of the display device may decrease. Also, the reliability of the display device may decrease.

[0367] As described above, by forming the insulating layer 156 so as to cover the side surfaces of the conductive layer 151 and the conductive layer 152, the step break of the inorganic insulating layer 125 can be prevented. Therefore, for example, in the second etching process, it is possible to prevent the chemical solution from contacting the underlying structure such as the conductive layer 151. Thereby, corrosion of the pixel electrode can be prevented.

[0368] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to suppress the occurrence of connection failures due to the disconnected portions and the increase in electrical resistance due to the locally thin film thickness portions in the common electrode 155 between the respective light-emitting devices. Thereby, the display device according to one aspect of the present invention can improve the display quality.

[0369] After exposing a part of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, further heat treatment is performed. By this heat treatment, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. can be removed. Further, the shape of the insulating layer 127 may change by this heat treatment. Specifically, the insulating layer 127 may spread so as to cover at least one of the end portions of the inorganic insulating layer 125, the end portions of the sacrificial layers 158R, 158G, and 158B, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0370] If the temperature of the heat treatment is too low, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. cannot be sufficiently removed. Further, if the temperature of the heat treatment is too high, deterioration of the organic compound layer 103 and excessive change in the shape of the insulating layer 127 may occur. Therefore, the heat treatment is preferably at a temperature higher than the temperature at which water desorbs from the organic compound layer 103 and lower than the glass transition temperature of the organic compound contained in the organic compound layer 103, and more preferably at a temperature lower than the glass transition temperature of the organic compound contained on the upper surface of the organic compound layer 103. Specifically, it is preferably performed at a substrate temperature of 80°C or higher and 130°C or lower, preferably 90°C or higher and 120°C or lower, more preferably 100°C or higher and 120°C or lower, and still more preferably 100°C or higher and 110°C or lower. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. Further, the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere, but a reduced pressure atmosphere is preferred so that the water desorbed from the organic compound layer 103 does not re-adsorb.

[0371] By this heat treatment, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. can be sufficiently removed without causing deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B and excessive change in the shape of the insulating layer 127. Thereby, deterioration of the characteristics of the light-emitting device can be prevented.

[0372] Subsequently, as shown in FIG. 10(B), a common layer 104 and a common electrode 155 are formed on the organic compound layer 103R, on the organic compound layer 103G, on the organic compound layer 103B, on the conductive layer 152C, and on the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by methods such as a sputtering method or a vacuum evaporation method. The common layer 104 may be formed by an evaporation method, and the common electrode 155 may be formed by a sputtering method.

[0373] Subsequently, as shown in FIG. 10(C), a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by methods such as a vacuum evaporation method, a sputtering method, a CVD method, or an ALD method.

[0374] Subsequently, the display device can be manufactured by bonding the substrate 120 onto the protective layer 131 using the resin layer 122. As described above, in the method for manufacturing a display device according to an aspect of the present invention, the insulating layer 156 is provided on the side surfaces of the conductive layer 151 and the conductive layer 152. Thereby, the yield of the display device can be increased, and the occurrence of defects can be suppressed.

[0375] As described above, in the method for manufacturing a display device according to an aspect of the present invention, the island-shaped organic compound layer 103R, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103B are not formed using a fine metal mask, but are formed by processing after forming a film on one surface. Therefore, the island-shaped layers can be formed with a uniform thickness. Then, a high-definition display device or a display device with a high aperture ratio can be realized. Also, even if the fineness or aperture ratio is high and the distance between adjacent sub-pixels is extremely short, it is possible to suppress the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B from contacting each other in adjacent sub-pixels. Therefore, it is possible to suppress the occurrence of leakage current between sub-pixels. Thereby, crosstalk can be prevented, and a display device with extremely high contrast can be realized. Also, even in a display device having a tandem type light-emitting device manufactured using a lithography method, a display device with good characteristics can be provided.

[0376] The configuration of this embodiment can be used in appropriate combination with the configurations of other embodiments.

[0377] (Embodiment 4) In this embodiment, a light-emitting device according to one aspect of the present invention will be described with reference to FIGS. 11(A) to 11(G) and FIGS. 12(A) to 12(I).

[0378] [Pixel layout] In this embodiment, mainly, a pixel layout different from that in FIG. 3 will be described. The arrangement of the sub-pixels is not particularly limited, and various methods can be applied. Examples of the arrangement of the sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0379] In this embodiment, the upper surface shape of the sub-pixel shown in the figure corresponds to the upper surface shape of the light-emitting region.

[0380] Examples of the upper surface shape of the sub-pixel include polygons such as triangles, quadrilaterals (including rectangles and squares), pentagons, shapes in which the corners of these polygons are rounded, ellipses, or circles.

[0381] Also, the circuit layout constituting the sub-pixel is not limited to the range of the sub-pixel shown in the figure and may be arranged outside thereof.

[0382] An S-stripe arrangement is applied to the pixel 178 shown in FIG. 11(A). The pixel 178 shown in FIG. 11(A) is composed of three sub-pixels: a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0383] The pixel 178 shown in FIG. 11(B) has a sub-pixel 110R having a substantially trapezoidal or substantially triangular upper surface shape with rounded corners, a sub-pixel 110G having a substantially trapezoidal or substantially triangular upper surface shape with rounded corners, and a sub-pixel 110B having a substantially rectangular or substantially hexagonal upper surface shape with rounded corners. Also, the sub-pixel 110R has a larger emission area than the sub-pixel 110G. Thus, the shape and size of each sub-pixel can be determined independently. For example, the size of a sub-pixel having a highly reliable light-emitting device can be made smaller.

[0384] In the pixels 124a and 124b shown in FIG. 11(C), a pentile arrangement is applied. FIG. 11(C) shows an example in which pixels 124a having sub-pixels 110R and sub-pixels 110G and pixels 124b having sub-pixels 110G and sub-pixels 110B are alternately arranged.

[0385] In the pixels 124a and 124b shown in FIGS. 11(D) to 11(F), a delta arrangement is applied. The pixel 124a has two sub-pixels (sub-pixel 110R and sub-pixel 110G) in the upper row (the first row) and one sub-pixel (sub-pixel 110B) in the lower row (the second row). The pixel 124b has one sub-pixel (sub-pixel 110B) in the upper row (the first row) and two sub-pixels (sub-pixel 110R and sub-pixel 110G) in the lower row (the second row).

[0386] FIG. 11(D) is an example in which each sub-pixel has a substantially rectangular upper surface shape with rounded corners, FIG. 11(E) is an example in which each sub-pixel has a circular upper surface shape, and FIG. 11(F) is an example in which each sub-pixel has a substantially hexagonal upper surface shape with rounded corners.

[0387] In FIG. 11(F), each sub-pixel is arranged inside a densely arranged hexagonal region. Each sub-pixel is arranged so as to be surrounded by six sub-pixels when focusing on one of the sub-pixels. Also, the sub-pixels presenting the same color light are provided so as not to be adjacent to each other. For example, when focusing on the sub-pixel 110R, each sub-pixel is provided so that three sub-pixels 110G and three sub-pixels 110B are alternately arranged so as to surround it.

[0388] FIG. 11(G) shows an example in which the sub-pixels of each color are arranged in a zigzag pattern. Specifically, in a top view, the upper side positions of two sub-pixels arranged in the row direction (for example, sub-pixel 110R and sub-pixel 110G, or sub-pixel 110G and sub-pixel 110B) are shifted.

[0389] In each pixel shown in FIGS. 11(A) to 11(G), for example, it is preferable that sub-pixel 110R is a sub-pixel R that emits red light, sub-pixel 110G is a sub-pixel G that emits green light, and sub-pixel 110B is a sub-pixel B that emits blue light. Note that the configuration of the sub-pixels is not limited to this, and the color presented by the sub-pixels and their arrangement order can be determined as appropriate. For example, sub-pixel 110G may be a sub-pixel R that emits red light, and sub-pixel 110R may be a sub-pixel G that emits green light.

[0390] In the photolithography method, as the pattern to be processed becomes finer, the influence of light diffraction cannot be ignored. Therefore, when transferring the pattern of the photomask by exposure, the fidelity is impaired, and it becomes difficult to process the resist mask into a desired shape. Therefore, even if the pattern of the photomask is rectangular, a pattern with rounded corners is likely to be formed. Accordingly, the upper surface shape of the sub-pixel may be a shape in which the corners of a polygon are rounded, an elliptical shape, a circular shape, or the like.

[0391] Furthermore, in the method for manufacturing a light-emitting device according to an aspect of the present invention, the organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat-resistant temperature of the organic compound layer. Therefore, depending on the heat-resistant temperature of the material of the organic compound layer and the curing temperature of the resist material, the curing of the resist film may be insufficient. A resist film with insufficient curing may take a shape deviated from the desired shape during processing. As a result, the upper surface shape of the organic compound layer may be a shape in which the corners of a polygon are rounded, an elliptical shape, a circular shape, or the like. For example, when trying to form a resist mask with a square upper surface shape, a resist mask with a circular upper surface shape may be formed, and the upper surface shape of the organic compound layer may become circular.

[0392] In addition, in order to make the upper surface shape of the organic compound layer a desired shape, a technique (OPC (Optical Proximity Correction) technique) may be used to correct the mask pattern in advance so that the design pattern and the transfer pattern match. Specifically, in the OPC technique, for example, a correction pattern is added to the graphic corner part on the mask pattern.

[0393] As shown in FIGS. 12(A) to 12(I), the pixel can have a configuration having four types of sub-pixels.

[0394] For the pixel 178 shown in FIGS. 12(A) to 12(C), a stripe arrangement is applied.

[0395] FIG. 12(A) is an example in which each sub-pixel has a rectangular upper surface shape, FIG. 12(B) is an example in which each sub-pixel has an upper surface shape formed by connecting two semi-circles and a rectangle, and FIG. 12(C) is an example in which each sub-pixel has an elliptical upper surface shape.

[0396] For the pixel 178 shown in FIGS. 12(D) to 12(F), a matrix arrangement is applied.

[0397] FIG. 12(D) is an example in which each sub-pixel has a square upper surface shape, FIG. 12(E) is an example in which each sub-pixel has a substantially square upper surface shape with rounded corners, and FIG. 12(F) is an example in which each sub-pixel has a circular upper surface shape.

[0398] In FIGS. 12(G) and 12(H), an example is shown in which one pixel 178 is composed of two rows and three columns.

[0399] The pixel 178 shown in Fig. 12(G) has three sub-pixels (sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B) in the upper row (the first row) and one sub-pixel (sub-pixel 110W) in the lower row (the second row). In other words, the pixel 178 has sub-pixel 110R in the left column (the first column), sub-pixel 110G in the central column (the second column), sub-pixel 110B in the right column (the third column), and further has sub-pixel 110W across these three columns.

[0400] The pixel 178 shown in Fig. 12(H) has three sub-pixels (sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B) in the upper row (the first row) and three sub-pixels 110W in the lower row (the second row). In other words, the pixel 178 has sub-pixel 110R and sub-pixel 110W in the left column (the first column), sub-pixel 110G and sub-pixel 110W in the central column (the second column), and sub-pixel 110B and sub-pixel 110W in the right column (the third column). As shown in Fig. 12(H), by adopting a configuration in which the arrangement of sub-pixels in the upper row and the lower row is made the same, it becomes possible to efficiently remove, for example, dust that may occur in the manufacturing process. Therefore, a light-emitting device with high display quality can be provided.

[0401] In the pixel 178 shown in Fig. 12(G) and Fig. 12(H), since the layout of sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B is a stripe arrangement, the display quality can be improved.

[0402] Fig. 12(I) shows an example in which one pixel 178 is composed of three rows and two columns.

[0403] The pixel 178 shown in Fig. 12(I) has sub-pixel 110R in the upper row (the first row), sub-pixel 110G in the central row (the second row), has sub-pixel 110B from the first row to the second row, and has one sub-pixel (sub-pixel 110W) in the lower row (the third row). In other words, the pixel 178 has sub-pixel 110R and sub-pixel 110G in the left column (the first column), has sub-pixel 110B in the right column (the second column), and further has sub-pixel 110W across these two columns.

[0404] In the pixel 178 shown in FIG. 12(I), since the layouts of the sub-pixels 110R, 110G, and 110B are in a so-called S stripe arrangement, the display quality can be improved.

[0405] The pixel 178 shown in FIGS. 12(A) to 12(I) is composed of four sub-pixels: a sub-pixel 110R, a sub-pixel 110G, a sub-pixel 110B, and a sub-pixel 110W. For example, the sub-pixel 110R can be a sub-pixel that emits red light, the sub-pixel 110G can be a sub-pixel that emits green light, the sub-pixel 110B can be a sub-pixel that emits blue light, and the sub-pixel 110W can be a sub-pixel that emits white light. Note that at least one of the sub-pixels 110R, 110G, 110B, and 110W may be a sub-pixel that emits cyan light, a sub-pixel that emits magenta light, a sub-pixel that emits yellow light, or a sub-pixel that emits near-infrared light.

[0406] As described above, for the pixel configured with sub-pixels having a light-emitting device in one aspect of the present invention, various layouts can be applied.

[0407] This embodiment can be appropriately combined with other embodiments or examples. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0408] (Embodiment 5) In this embodiment, a light-emitting device according to one aspect of the present invention will be described.

[0409] The light-emitting device of this embodiment can be a high-definition light-emitting device. Therefore, the light-emitting device of this embodiment can be used, for example, in a display unit of an information terminal device (wearable device) such as a wristwatch type and a bracelet type, a VR device such as a head-mounted display (HMD), and a display unit of a wearable device that can be worn on the head such as a glasses-type AR device.

[0410] In addition, the light-emitting device of this embodiment can be a high-resolution light-emitting device or a large-sized light-emitting device. Therefore, the light-emitting device of this embodiment can be used, for example, in electronic devices having a relatively large screen such as a television device, a desktop or notebook personal computer, a monitor for a computer, etc., a digital signage, and a large game machine such as a pachinko machine, as well as in the display units of a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, and an audio playback device.

[0411] [Display module] Fig. 13(A) shows a perspective view of the display module 280. The display module 280 has a light-emitting device 100A and an FPC 290. Note that the light-emitting device included in the display module 280 is not limited to the light-emitting device 100A, and may be any one of the light-emitting device 100B, the light-emitting device 100H, the light-emitting device 100H2, the light-emitting device 100C, and the light-emitting device 100C2 described later.

[0412] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is an area for displaying an image in the display module 280, and is an area where light from each pixel provided in the pixel portion 284 described later can be visually recognized.

[0413] Fig. 13(B) shows a perspective view schematically showing the configuration on the substrate 291 side. On the substrate 291, a circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are laminated. In addition, a terminal portion 285 for connecting to the FPC 290 is provided in a portion that does not overlap with the pixel portion 284 on the substrate 291. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 formed of a plurality of wirings.

[0414] The pixel portion 284 has a plurality of pixels 284a arranged periodically. An enlarged view of one pixel 284a is shown on the right side of FIG. 13(B). Various configurations described in the previous embodiments can be applied to the pixel 284a. In FIG. 13(B), a case where the pixel 284a has the same configuration as the pixel 178 shown in FIG. 3 is shown as an example.

[0415] The pixel circuit portion 283 has a plurality of pixel circuits 283a arranged periodically.

[0416] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a. One pixel circuit 283a can be configured to include three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to include at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain thereof, respectively. Thereby, an active matrix light-emitting device is realized.

[0417] The circuit portion 282 has a circuit that drives each pixel circuit 283a of the pixel circuit portion 283. For example, it preferably has one or both of a gate line driving circuit and a source line driving circuit. In addition, it may have at least one of an arithmetic circuit, a memory circuit, and a power supply circuit.

[0418] The FPC 290 functions as a wiring for supplying a video signal or a power supply potential or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0419] The display module 280 can be configured such that one or both of the pixel circuit portion 283 and the circuit portion 282 are stacked below the pixel portion 284, so that the aperture ratio (effective display area ratio) of the display portion 281 can be made extremely high. For example, the aperture ratio of the display portion 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less. Also, the pixels 284a can be arranged extremely densely, and the definition of the display portion 281 can be made extremely high. For example, in the display portion 281, the pixels 284a are preferably arranged with a definition of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, still more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0420] Since such a display module 280 is extremely high-definition, it can be suitably used for VR devices such as HMDs or glasses-type AR devices. For example, even in the case of a configuration in which the display portion of the display module 280 is viewed through a lens, since the display module 280 has an extremely high-definition display portion 281, no pixels can be seen even when the display portion is enlarged by the lens, and a highly immersive display can be performed. Also, the display module 280 is not limited to this, and can be suitably used for electronic devices having a relatively small display portion. For example, it can be suitably used for the display portion of a wearable electronic device such as a wristwatch.

[0421] [Light-emitting device 100A] The light-emitting device 100A shown in FIG. 14(A) includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0422] The substrate 301 corresponds to the substrate 291 in FIGS. 13(A) and 13(B). The transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or a drain. The insulating layer 314 is provided to cover the side surface of the conductive layer 311.

[0423] Also, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0424] Also, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0425] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0426] The conductive layer 241 is provided on the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping the conductive layer 241 via the insulating layer 243.

[0427] Covering a capacity of 240, an insulating layer 255 is provided, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. On the insulating layer 175, a light-emitting device 130R, a light-emitting device 130G, and a light-emitting device 130B are provided. In FIG. 14(A), an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B have the stacked structure shown in FIG. 1(A) is shown. An insulator is provided in the region between adjacent light-emitting devices. For example, in FIG. 14(A), an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in this region.

[0428] An insulating layer 156R is provided so as to cover the side surfaces of a conductive layer 151R and a conductive layer 152R included in the light-emitting device 130R, an insulating layer 156G is provided so as to cover the side surfaces of a conductive layer 151G and a conductive layer 152G included in the light-emitting device 130G, and an insulating layer 156B is provided so as to cover the side surfaces of a conductive layer 151B and a conductive layer 152B included in the light-emitting device 130B. Further, a sacrificial layer 158R is located on an organic compound layer 103R included in the light-emitting device 130R, a sacrificial layer 158G is located on an organic compound layer 103G included in the light-emitting device 130G, and a sacrificial layer 158B is located on an organic compound layer 103B included in the light-emitting device 130B.

[0429] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source or drain of the transistor 310 by a plug 256 embedded in the insulating layers 243, 255, 174, and 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the upper surface of the insulating layer 175 and the height of the upper surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0430] Further, a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting device 130 to the substrate 120 can be referred to in Embodiment 3. The substrate 120 corresponds to the substrate 292 in FIG. 13(A).

[0431] FIG. 14(B) is a modified example of the light-emitting device 100A shown in FIG. 14(A). The light-emitting device shown in FIG. 14(B) has a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light-emitting device 130 has a region overlapping with one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. In the light-emitting device shown in FIG. 14(B), the light-emitting device 130 can emit, for example, white light. Further, for example, the coloring layer 132R can transmit red light, the coloring layer 132G can transmit green light, and the coloring layer 132B can transmit blue light.

[0432] [Light-emitting device 100B] FIG. 15 shows a perspective view of the light-emitting device 100B, and FIG. 16(A) shows a cross-sectional view of the light-emitting device 100B.

[0433] The light-emitting device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In FIG. 15, the substrate 352 is indicated by a broken line.

[0434] The light-emitting device 100B includes a pixel portion 177, a connection portion 140, a circuit 356, a wiring 355, and the like. FIG. 15 shows an example in which an IC (integrated circuit) 354 and an FPC 353 are mounted on the light-emitting device 100B. Therefore, the configuration shown in FIG. 15 can also be referred to as a display module having the light-emitting device 100B, an IC, and an FPC. Here, a device in which a connector such as an FPC is attached to the substrate of the light-emitting device or an IC is mounted on the substrate is called a display module.

[0435] The connection part 140 is provided outside the pixel part 177. The connection part 140 can be provided along one side or a plurality of sides of the pixel part 177. The connection part 140 may be singular or plural. FIG. 15 shows an example in which the connection part 140 is provided so as to surround the four sides of the pixel part 177. In the connection part 140, the common electrode of the light-emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0436] As the circuit 356, for example, a scanning line driving circuit can be used.

[0437] The wiring 355 has a function of supplying signals and power to the pixel part 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0438] FIG. 15 shows an example in which the IC 354 is provided on the substrate 351 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like. As the IC 354, for example, an IC having a scanning line driving circuit, a signal line driving circuit, or the like can be applied. Note that the light-emitting device 100B and the display module may be configured not to include an IC. Further, the IC may be mounted on the FPC by, for example, a COF method.

[0439] FIG. 16(A) shows an example of a cross section when a part of the region including the FPC 353, a part of the circuit 356, a part of the pixel part 177, a part of the connection part 140, and a part of the region including the end portion of the light-emitting device 100B are each cut.

[0440] The light-emitting device 100B shown in FIG. 16(A) has a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, a light-emitting device 130B that emits blue light, etc. between the substrate 351 and the substrate 352.

[0441] The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B each have the laminated structure shown in FIG. 1(A), except that the configuration of the pixel electrodes is different. For details of the light-emitting device, reference can be made to the previous embodiment.

[0442] The light-emitting device 130R has a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. The light-emitting device 130G has a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. The light-emitting device 130B has a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B. Here, all of the conductive layer 224R, the conductive layer 151R, and the conductive layer 152R can be collectively referred to as the pixel electrode of the light-emitting device 130R, and the conductive layer 151R and the conductive layer 152R excluding the conductive layer 224R can also be referred to as the pixel electrode of the light-emitting device 130R. Similarly, all of the conductive layer 224G, the conductive layer 151G, and the conductive layer 152G can be collectively referred to as the pixel electrode of the light-emitting device 130G, and the conductive layer 151G and the conductive layer 152G excluding the conductive layer 224G can also be referred to as the pixel electrode of the light-emitting device 130G. Further, all of the conductive layer 224B, the conductive layer 151B, and the conductive layer 152B can be collectively referred to as the pixel electrode of the light-emitting device 130B, and the conductive layer 151B and the conductive layer 152B excluding the conductive layer 224B can also be referred to as the pixel electrode of the light-emitting device 130B.

[0443] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The end of the conductive layer 151R is located outside the end of the conductive layer 224R. An insulating layer 156R is provided so as to have a region in contact with the side surface of the conductive layer 151R, and a conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R.

[0444] Since the conductive layer 224G, conductive layer 151G, conductive layer 152G, insulating layer 156G in the light-emitting device 130G and the conductive layer 224B, conductive layer 151B, conductive layer 152B, insulating layer 156B in the light-emitting device 130B are the same as the conductive layer 224R, conductive layer 151R, conductive layer 152R, insulating layer 156R in the light-emitting device 130R, detailed description thereof will be omitted.

[0445] In the conductive layer 224R, conductive layer 224G, and conductive layer 224B, recesses are formed so as to cover the openings provided in the insulating layer 214. The layer 128 is embedded in the recesses.

[0446] The layer 128 has a function of planarizing the recesses of the conductive layer 224R, conductive layer 224G, and conductive layer 224B. On the conductive layer 224R, conductive layer 224G, conductive layer 224B, and layer 128, conductive layers 151R, 151G, and 151B that are electrically connected to the conductive layer 224R, conductive layer 224G, and conductive layer 224B are provided. Therefore, the region overlapping with the recesses of the conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0447] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be appropriately used for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and particularly preferably formed using an organic insulating material. For example, the organic insulating material that can be used for the aforementioned insulating layer 127 can be applied to the layer 128.

[0448] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are adhered via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. For encapsulating the light-emitting device 130, a solid encapsulation structure, a hollow encapsulation structure, or the like can be applied. In FIG. 16(A), the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid encapsulation structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow encapsulation structure may be applied. At this time, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Further, the space may be filled with a resin different from the adhesivelayer 142 provided in a frame shape.

[0449] In FIG. 16(A), an example is shown in which the connection portion 140 has a conductive layer 224C obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. Further, in FIG. 16(A), an example is shown in which an insulating layer 156C is provided so as to have a region overlapping the side surface of the conductive layer 151C.

[0450] The light-emitting device 100B is a top emission type. The light emitted from the light-emitting device is emitted toward the substrate 352 side. It is preferable to use a material having high transmittance for visible light for the substrate 352. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0451] Both the transistor 201 and the transistor 205 are formed on the substrate 351. These transistors can be manufactured by the same material and the same process.

[0452] On the substrate 351, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. A part of the insulating layer 213 functions as a gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

[0453] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistor. Thereby, the insulating layer can function as a barrier layer. With such a configuration, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the light-emitting device can be improved.

[0454] As the insulating layer 211, the insulating layer 213, and the insulating layer 215, it is preferable to use an inorganic insulating film respectively. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. Further, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Further, two or more of the above-described insulating films may be laminated and used.

[0455] As the insulating layer 214 that functions as a planarization layer, an organic insulating layer is preferable. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. Further, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost surface of the insulating layer 214 preferably has a function as an etching protection layer. Thereby, it is possible to suppress the formation of recesses in the insulating layer 214 during the processing of the conductive layer 224R, the conductive layer 151R, or the conductive layer 152R. Alternatively, the insulating layer 214 may be provided with recesses during the processing of the conductive layer 224R, the conductive layer 151R, or the conductive layer 152R.

[0456] The transistor 201 and the transistor 205 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0457] The structure of the transistor included in the light-emitting device of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0458] In the transistors 201 and 205, a configuration is applied in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The transistor may be driven by connecting the two gates and supplying the same signal thereto. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0459] The crystallinity of the semiconductor material used for the transistor is not particularly limited, and any of an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.

[0460] The semiconductor layer of the transistor preferably has a metal oxide. That is, it is preferable to use a transistor (hereinafter, also referred to as an OS transistor) using a metal oxide for the channel formation region in the light-emitting device of the present embodiment.

[0461] Examples of the oxide semiconductor having crystallinity include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.

[0462] Alternatively, a transistor (Si transistor) using silicon for the channel formation region may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter, also referred to as an LTPS transistor) can be used. The LTPS transistor has a high field-effect mobility and good frequency characteristics.

[0463] By applying Si transistors such as LTPS transistors, a circuit that needs to be driven at a high frequency (for example, a source driver circuit) can be fabricated on the same substrate as the display unit. As a result, the external circuit mounted on the light-emitting device can be simplified, and the component cost and mounting cost can be reduced.

[0464] The OS transistor has an extremely high field-effect mobility compared to a transistor using amorphous silicon. In addition, the OS transistor has an extremely small leakage current between the source and drain in the off state (hereinafter also referred to as the off current), and can hold the charge accumulated in the capacitor connected in series with the transistor for a long period of time. Further, by applying the OS transistor, the power consumption of the light-emitting device can be reduced.

[0465] Also, when increasing the emission luminance of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. For this purpose, it is necessary to increase the voltage between the source and drain of the driving transistor included in the pixel circuit. The OS transistor has a higher breakdown voltage between the source and drain compared to the Si transistor, so a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, and the emission luminance of the light-emitting device can be increased.

[0466] Also, in the saturation characteristics of the current flowing when the transistor operates in the saturation region, the OS transistor can flow a more stable current (saturation current) than the Si transistor even when the voltage between the source and drain gradually increases. Therefore, by using the OS transistor as the driving transistor, for example, even when there are variations in the current-voltage characteristics of the light-emitting device, a stable current can be made to flow through the light-emitting device. That is, when the OS transistor operates in the saturation region, even if the voltage between the source and drain is increased, the current between the source and drain hardly changes, so the emission luminance of the light-emitting device can be stabilized.

[0467] As described above, by using an OS transistor as the driving transistor included in the pixel circuit, it is possible to achieve "suppression of black floating", "increase in emission luminance", "multi-gradation", and "suppression of variations in light-emitting devices".

[0468] The semiconductor layer preferably has, for example, indium, one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and tin.

[0469] In particular, as the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (IAGZO).

[0470] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratios of the metal elements in such In-M-Zn oxides include compositions such as In:M:Zn = 1:1:1 or in the vicinity thereof, In:M:Zn = 1:1:1.2 or in the vicinity thereof, In:M:Zn = 2:1:3 or in the vicinity thereof, In:M:Zn = 3:1:2 or in the vicinity thereof, In:M:Zn = 4:2:3 or in the vicinity thereof, In:M:Zn = 4:2:4.1 or in the vicinity thereof, In:M:Zn = 5:1:3 or in the vicinity thereof, In:M:Zn = 5:1:6 or in the vicinity thereof, In:M:Zn = 5:1:7 or in the vicinity thereof, In:M:Zn = 5:1:8 or in the vicinity thereof, In:M:Zn = 6:1:6 or in the vicinity thereof, In:M:Zn = 5:2:5 or in the vicinity thereof, etc. The composition in the vicinity means that it includes a range of ±30% of the desired atomic ratio.

[0471] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or in the vicinity thereof, when the atomic ratio of In is 4, it includes cases where the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Also, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or in the vicinity thereof, when the atomic ratio of In is 5, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Also, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or in the vicinity thereof, when the atomic ratio of In is 1, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0472] The transistors included in circuit 356 and the transistors included in pixel section 177 may have the same structure or different structures. The structures of the plurality of transistors included in circuit 356 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in pixel section 177 may all be the same or there may be two or more types.

[0473] All of the transistors included in the pixel portion 177 may be OS transistors, all of the transistors included in the pixel portion 177 may be Si transistors, or a part of the transistors included in the pixel portion 177 may be OS transistors and the remainder may be Si transistors.

[0474] For example, by using both LTPS transistors and OS transistors in the pixel portion 177, a light-emitting device with low power consumption and high driving ability can be realized. In addition, a configuration in which LTPS transistors and OS transistors are combined may be referred to as LTPO. Note that, for example, it is preferable to apply an OS transistor to a transistor that functions as a switch for controlling conduction and non-conduction of wiring, and to apply an LTPS transistor to a transistor that controls current.

[0475] For example, one of the transistors included in the pixel portion 177 functions as a transistor for controlling the current flowing through the light-emitting device and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for the driving transistor. Thereby, the current flowing through the light-emitting device in the pixel circuit can be increased.

[0476] On the other hand, the other one of the transistors included in the pixel portion 177 functions as a switch for controlling selection and non-selection of a pixel and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to apply an OS transistor to the selection transistor. Thereby, even when the frame frequency is significantly reduced (for example, to 1 fps or less), the gradation of the pixel can be maintained, so that the power consumption can be reduced by stopping the driver when displaying a still image.

[0477] As described above, the light-emitting device according to one aspect of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0478] Note that the light-emitting device according to one aspect of the present invention has an OS transistor and a light-emitting device having an MML (Metal Maskless) structure. By adopting such a configuration, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (sometimes referred to as horizontal leakage current, lateral leakage current, or transverse leakage current) can be made extremely low. Further, by adopting the above configuration, when an image is displayed on the light-emitting device, an observer can observe any one or more of the sharpness of the image, the vividness of the image, high color saturation, and a high contrast ratio. Note that by adopting a configuration in which the leakage current that can flow through the transistor and the horizontal leakage current between the light-emitting devices are extremely low, it is possible to achieve a display with extremely little light leakage (so-called black floating) that may occur during black display.

[0479] In particular, among the light-emitting devices having an MML structure, by applying an SBS (Side By Side) structure in which the above-described light-emitting layer is separately formed or painted, the layer provided between the light-emitting devices (for example, an organic layer commonly used between the light-emitting devices, also referred to as a common layer) is segmented, so that side leakage can be eliminated or made extremely small.

[0480] FIG. 16(B) and FIG. 16(C) show other configuration examples of the transistor.

[0481] Transistors 209 and 210 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Further, an insulating layer 218 that covers the transistor may be provided.

[0482] In the transistor 209 shown in FIG. 16(B), an example is shown in which the insulating layer 225 covers the upper surface and the side surface of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. Of the conductive layer 222a and the conductive layer 222b, one functions as a source and the other functions as a drain.

[0483] On the other hand, in the transistor 210 shown in FIG. 16(C), the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 16(C) can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 16(C), the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through the openings in the insulating layer 215, respectively.

[0484] In the area of the substrate 351 where the substrate 352 does not overlap, a connection portion 204 is provided. In the connection portion 204, a wiring 355 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 is an example of a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. Thereby, the connection portion 204 and the FPC 353 can be electrically connected via the connection layer 242.

[0485] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 on the side of the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, at the connection portion 140, and in the circuit 356 or the like. Also, various optical members can be arranged outside the substrate 352.

[0486] As the substrate 351 and the substrate 352, materials that can be used for the substrate 120 can be applied respectively.

[0487] As the adhesive layer 142, materials that can be used for the resin layer 122 can be applied.

[0488] As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0489] [Light-emitting device 100H] The light-emitting device 100H shown in FIG. 17 is mainly different from the light-emitting device 100B shown in FIG. 16(A) in that it is a bottom emission type light-emitting device.

[0490] The light emitted by the light-emitting device is emitted toward the substrate 351 side. It is preferable to use a material with high transmittance for visible light for the substrate 351. On the other hand, the light transmittance of the material used for the substrate 352 is not limited.

[0491] It is preferable to form a light-shielding layer 157 between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. FIG. 17 shows an example in which a light-shielding layer 157 is provided on the substrate 351, an insulating layer 153 is provided on the light-shielding layer 157, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0492] The light-emitting device 130R has a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0493] The light-emitting device 130B has a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0494] For the conductive layers 112R, 112B, 126R, 126B, 129R, and 129B, materials with high transmittance for visible light are used respectively. It is preferable to use a material that reflects visible light for the common electrode 155.

[0495] In addition, in FIG. 17, although the light-emitting device 130G is not shown, the light-emitting device 130G is also provided.

[0496] Also, in FIG. 17 etc., an example in which the upper surface of the layer 128 has a flat portion is shown, but the shape of the layer 128 is not particularly limited.

[0497] [Light-emitting device 100H2] The light-emitting device 100H2 shown in FIG. 18 is a bottom emission type, but is an example of a bottom emission type light-emitting device different from the light-emitting device 100H shown in FIG. 17. The light-emitting device 100H2 is different from the light-emitting device 100H in that it has an organic resin layer 180. In the figure, the reference numerals of the same components as those in FIG. 14 may be omitted, and the details thereof may be referred to the description of FIG. 14.

[0498] Further, FIG. 18(B) shows the top layout of pixels 178 (pixel 178a and pixel 178b) having sub-pixels 110 (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, sub-pixel 110W), and FIG. 18(C) shows a top view of the organic resin layer 180 in the region where the sub-pixels 110R and 110W included in the pixel 178 are formed. Note that the width between the light-shielding layers 317 is the width 110Rw in the light-emitting region of the sub-pixel 110R.

[0499] As shown in FIG. 18(A), the organic resin layer 180 is provided on the insulating layer 214. As shown by the dashed line in FIG. 18(A) and in FIG. 18(C), the organic resin layer 180 has concave portions 181 (concave portion 181a, concave portion 181b) having curved surfaces in at least the region where sub-pixels are formed. Note that the concave portion 181 may be provided outside the light-emitting region like the concave portion 181c. By providing the concave portion 181c, light generated in the region overlapping with the light-shielding layer 317 or light that has traveled to the region overlapping with the light-shielding layer 317 is refracted and can be extracted from the light-emitting region, so that the light-emitting efficiency can be improved.

[0500] A plurality of the concave portions 181 may be formed in a matrix. The concave portion 181a and the concave portion 181b may be provided in contact with each other or may have a flat surface therebetween.

[0501] In FIG. 18, the top surface shape of the concave portion is shown as a hexagon (FIG. 18(C)) and the cross-sectional shape is shown as a semi-circle (FIG. 18(A)), but other shapes may be used as needed. For example, the top surface shape of the concave portion may be a polygon such as a triangle, a quadrilateral (including a rectangle and a square), a pentagon, a shape in which the corners of these polygons are rounded, an ellipse, or a circle.

[0502] As the organic resin layer 180, an insulating layer containing an organic material can be used. For example, as the organic resin layer 180, an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimide amide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, and precursors of these resins can be applied. Further, as the organic resin layer 180, an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0503] Further, as the organic resin layer 180, a photosensitive resin can be used. As the photosensitive resin, a photoresist may be used. The photosensitive resin can be a positive-type material or a negative-type material.

[0504] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be composed of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. As the organic resin layer 180, for example, a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix can be used.

[0505] Further, on the organic resin layer 180, there are a first electrode 101 (the first electrode 101R and the first electrode 101W), and an organic compound layer 103 on the first electrode 101.

[0506] In addition, the first electrode 101 formed on the organic resin layer 180 also has a recess along the recess of the organic resin layer 180. Further, the organic compound layer 103 formed on the first electrode 101 also has a recess along the recess of the first electrode 101. Further, the common layer 104 formed on the organic compound layer 103 also has a recess along the recess of the organic compound layer 103. Further, the second electrode 102 formed on the common layer 104 also has a recess along the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 have a structure that overlaps each other.

[0507] Further, it has a common layer 104 on the organic compound layer 103 and the insulating layer 127, and a second electrode 102 on the common layer 104. A protective layer 131 is provided on the second electrode 102, and it has a structure bonded to the substrate 352 via an adhesive layer 142.

[0508] In addition, in FIG. 18, the light-emitting devices 130G and 130B are not shown, but the light-emitting devices 130G and 130B are also provided.

[0509] [Light-emitting device 100C] The light-emitting device 100C shown in FIG. 19(A) is a modified example of the top-emission type light-emitting device 100B shown in FIG. 16(A), and is mainly different from the light-emitting device 100B in that it has a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B.

[0510] In the light-emitting device 100C, the light-emitting device 130 has a region that overlaps with one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. The coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can be provided on the surface of the substrate 352 on the substrate 351 side. The ends of the coloring layer 132R, the ends of the coloring layer 132G, and the ends of the coloring layer 132B can overlap with the light-shielding layer 157.

[0511] In the light-emitting device 100C, the light-emitting device 130 can emit, for example, white light. Further, for example, the color layer 132R transmits red light, the color layer 132G transmits green light, and the color layer 132B can transmit blue light. Note that the light-emitting device 100C may be configured such that the color layer 132R, the color layer 132G, and the color layer 132B are provided between the protective layer 131 and the adhesive layer 142.

[0512] In FIGS. 16(A) and 19(A) and the like, an example in which the upper surface of the layer 128 has a flat portion is shown, but the shape of the layer 128 is not particularly limited. FIGS. 19(B) to 19(D) show modified examples of the layer 128.

[0513] As shown in FIGS. 19(B) and 19(D), the upper surface of the layer 128 can be configured to have a shape in which the center and the vicinity thereof are recessed, that is, a concave curved surface, in a cross-sectional view. Further, a common layer 154 may be provided so as to be in contact with the common electrode 155.

[0514] Further, as shown in FIG. 19(C), the upper surface of the layer 128 can be configured to have a shape in which the center and the vicinity thereof are swollen, that is, a convex curved surface, in a cross-sectional view.

[0515] Further, the upper surface of the layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of the convex curved surface and the concave curved surface of the upper surface of the layer 128 is not limited, and may be one or more.

[0516] Further, the height of the upper surface of the layer 128 and the height of the upper surface of the conductive layer 224R may be the same or substantially the same, or may be different from each other. For example, the height of the upper surface of the layer 128 may be lower or higher than the height of the upper surface of the conductive layer 224R.

[0517] Further, FIG. 19(B) can also be said to be an example in which the layer 128 is accommodated inside the concave portion formed in the conductive layer 224R. On the other hand, as shown in FIG. 19(D), the layer 128 may be present outside the concave portion formed in the conductive layer 224R, that is, the width of the upper surface of the layer 128 may be wider than the concave portion.

[0518] [Light-emitting device 100C2] The light-emitting device 100C2 shown in FIG. 20 is a modified example of the top-emission type light-emitting device 100C shown in FIG. 19, and has microlenses 182 on the color filter layers 132R, 132G, and 132B. In the figure, the reference numerals of the same components as those in FIG. 19 may be omitted, and the details thereof may be referred to the description of FIG. 19.

[0519] Further, FIG. 20(B) shows the top layout of the pixels 178 (pixels 178a and 178b) having sub-pixels 110 (sub-pixels 110R, 110G, and 110B), and FIG. 20(C) shows a top view of the microlenses 182 in the regions where the sub-pixels 110R, 110G, and 110B included in the pixel 178 are formed. Note that the region where the common electrode 155 is in contact with the organic compound layer 103 has a width 110Gw in the light-emitting region of the sub-pixel 110G.

[0520] In the light-emitting device 100C2 shown in FIG. 20(A), a planarization film 143 is provided on the protective layer 131, and the color filter layers 132R, 132G, and 132B are provided on the planarization film 143. A planarization film 144 is provided so as to cover the color filter layers 132R, 132G, and 132B. The microlenses 182 are provided on the planarization film 144.

[0521] Note that as shown in FIG. 20(C), the microlenses 182 may be provided for each sub-pixel in the region where the sub-pixels are formed.

[0522] Note that in FIG. 20(C), the top shape of the microlens 182 is shown as a hexagon, but it may be other shapes as required. For example, the top shape of the microlens 182 may be a polygon such as a triangle, a quadrilateral (including a rectangle and a square), a pentagon, a shape in which the corners of these polygons are rounded, an ellipse, or a circle.

[0523] The microlenses 182 can be formed using the same material as the organic resin layer 180.

[0524] This embodiment can be appropriately combined with other embodiments or examples. Also, in this specification, when multiple configuration examples are shown within one embodiment, the configuration examples can be appropriately combined.

[0525] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described.

[0526] The electronic device of this embodiment has a light-emitting device according to one aspect of the present invention on a display unit. The light-emitting device according to one aspect of the present invention has high reliability and is easily capable of high definition and high resolution. Therefore, it can be used for the display units of various electronic devices.

[0527] Examples of the electronic device include, in addition to electronic devices having a relatively large screen such as a television device, a desktop or notebook personal computer, a monitor for a computer, etc., a digital signage, a large game machine such as a pachinko machine, etc., a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio playback device, etc.

[0528] In particular, since the light-emitting device according to one aspect of the present invention can enhance the fineness, it can be suitably used for an electronic device having a relatively small display unit. Examples of such an electronic device include, for example, a wristwatch-type and a bracelet-type information terminal device (wearable device), as well as a VR-oriented device such as a head-mounted display, a glasses-type AR-oriented device, and an MR-oriented device, etc., a wearable device that can be worn on the head.

[0529] The light-emitting device according to one aspect of the present invention preferably has an extremely high resolution such as HD (number of pixels: 1280×720), FHD (number of pixels: 1920×1080), WQHD (number of pixels: 2560×1440), WQXGA (number of pixels: 2560×1600), 4K (number of pixels: 3840×2160), 8K (number of pixels: 7680×4320). In particular, it is preferably 4K, 8K, or a resolution higher than that. Further, the pixel density (definition) in the light-emitting device according to one aspect of the present invention is preferably 100 ppi or more, more preferably 300 ppi or more, still more preferably 500 ppi or more, still more preferably 1000 ppi or more, still more preferably 2000 ppi or more, still more preferably 3000 ppi or more, still more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a light-emitting device having one or both of such high resolution and high definition, it becomes possible to enhance the sense of presence and depth in personal-use electronic devices such as portable or home-use devices. Further, there is no particular limitation on the screen ratio (aspect ratio) of the light-emitting device according to one aspect of the present invention. For example, the light-emitting device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0530] The electronic device according to the present embodiment may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0531] The electronic device according to the present embodiment can have various functions. For example, it can have a function of displaying various information (still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of executing various software (programs), a wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.

[0532] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 21(A) to 21(D). These wearable devices have at least one of the functions of displaying AR content, VR content, SR content, and MR content. By having the function of displaying at least one content such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0533] The electronic device 700A shown in FIG. 21(A) and the electronic device 700B shown in FIG. 21(B) each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting parts 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0534] The light-emitting device according to an aspect of the present invention can be applied to the display panel 751. Therefore, a highly reliable electronic device can be obtained.

[0535] The electronic device 700A and the electronic device 700B can each project the image displayed on the display panel 751 onto the display area 756 of the optical member 753. Since the optical member 753 has translucency, the user can view the image displayed in the display area superimposed on the transmitted image viewed through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each an electronic device capable of AR display.

[0536] The electronic device 700A and the electronic device 700B may each be provided with a camera capable of imaging the front as an imaging unit. Further, the electronic device 700A and the electronic device 700B each include an acceleration sensor such as a gyro sensor, so that the orientation of the user's head can be detected, and an image corresponding to the orientation can be displayed in the display area 756.

[0537] The communication unit has a wireless communication device, and the wireless communication device can supply, for example, a video signal. In addition, instead of or in addition to the wireless communication device, a connector to which a cable for supplying a video signal and a power potential can be connected may be provided.

[0538] In addition, the electronic device 700A and the electronic device 700B are provided with a battery, which can be charged by one or both of wireless and wired means.

[0539] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting that the outer surface of the housing 721 is touched. By the touch sensor module, a tap operation or a slide operation of the user can be detected, and various processes can be executed. For example, it becomes possible to execute processes such as pausing or resuming a video by a tap operation, and it becomes possible to execute processes such as fast-forwarding or rewinding by a slide operation. In addition, by providing a touch sensor module on each of the two housings 721, the range of operations can be widened.

[0540] As the touch sensor module, various touch sensors can be applied. For example, various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, or an optical method can be adopted. In particular, it is preferable to apply a capacitance method or an optical method sensor to the touch sensor module.

[0541] When using an optical touch sensor, a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving element. For the active layer of the photoelectric conversion device, one or both of an inorganic semiconductor and an organic semiconductor can be used.

[0542] The electronic device 800A shown in FIG. 21(C) and the electronic device 800B shown in FIG. 21(D) each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0543] The display unit 820 can apply the light-emitting device of one aspect of the present invention. Therefore, a highly reliable electronic devi...

Claims

1. An organometallic complex represented by the following general formula (G1): 【Chemistry 1】 (In the formula, R ２ and R ８ represents an alkyl group having 1 to 10 carbon atoms and a deuterium atom; R １ , R ３ ~R ７ and R ９ ~R ２６ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and R ４ ~R ６ At least one of R represents an alkyl group having 1 to 10 carbon atoms; ２２ ~R ２６ At least one of the above represents an alkyl group having 3 to 10 carbon atoms.

2. In claim 1, R ２３ and R ２５ represents an alkyl group having 3 to 10 carbon atoms.

3. An organometallic complex represented by the following general formula (G1): 【Chemistry 2】 (In the formula, R ２ and R ８ represents an alkyl group having 1 to 10 carbon atoms and a deuterium atom; R ５ represents an alkyl group having 1 to 10 carbon atoms; R １ , R ３ , R ４ , R ６ , R ７ and R ９ ~R ２６ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, and R ２２ ~R ２６ At least one of the above represents an alkyl group having 3 to 10 carbon atoms.

4. An organometallic complex represented by the following general formula (G1): 【Chemistry 3】 (In the formula, R ５ represents an alkyl group having 1 to 10 carbon atoms; R ２ and R ８ represents an alkyl group having 1 to 10 carbon atoms and a deuterium atom; R ２３ and R ２５ represents an alkyl group having 3 to 10 carbon atoms; R １ , R ３ , R ４ , R ６ , R ７ , R ９ ~R ２２ , R ２４ and R ２６ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

5. An organometallic complex represented by the following general formula (G2): 【Chemistry 4】 (In the formula, R １ , R ３ , R ４ , R ６ , R ７ , R ９ ~R ２２ , R ２４ and R ２６ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 18 carbon atoms.

6. An organometallic complex represented by the following structural formula (100): 【Chemistry 5】

7. A light-emitting device having a light-emitting layer comprising the organometallic complex of claim 1 .

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