Chemically amplified positive resist composition and method of forming resist pattern
The use of an onium salt with a sulfonate anion and triarylsulfonium cation in chemically amplified resist compositions suppresses acid diffusion, enabling high-resolution patterns with small line edge roughness and rectangularity, particularly in EB and EUV lithography.
Patent Information
- Application Number
- JP2024107164
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-07-03
- Publication Date
- 2026-01-16
AI Technical Summary
Existing chemically amplified resist compositions face challenges in forming fine patterns with stable rectangularity and small line edge roughness due to acid diffusion, leading to pattern collapse during development, especially in EB lithography and EUV lithography.
Incorporation of an onium salt with a sulfonate anion having an aromatic sulfonic acid structure and a triarylsulfonium cation containing an iodine atom and a fluorine atom as a photoacid generator, along with a base polymer containing specific repeating units, to suppress acid diffusion and enhance solvent solubility, resulting in patterns with small line edge roughness and excellent rectangularity.
The resist composition achieves high resolution and produces patterns with small line edge roughness and excellent rectangularity, suitable for microfabrication techniques like EB lithography and EUV lithography, addressing the issues of acid diffusion and pattern collapse.