semiconductor adhesive, semiconductor adhesive sheet, and method for manufacturing a semiconductor device.

JP2026103887APending Publication Date: 2026-06-24RESONAC CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
RESONAC CORP
Filing Date
2026-03-13
Publication Date
2026-06-24

AI Technical Summary

Benefits of technology

【0012】 本発明の一側面によれば、例えば60~80℃程度の温度で長時間の熱履歴を受けた後であっても、半導体チップと配線回路基板又は他の半導体チップとをフリップチップ接続方式によって高い信頼性で接続することを可能にする半導体用接着剤が提供される。

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Abstract

To provide a semiconductor adhesive that enables highly reliable connection of a semiconductor chip to a wiring circuit board or other semiconductor chip using a flip-chip connection method, even after being subjected to prolonged thermal history. [Solution] A semiconductor adhesive comprising a thermosetting resin, a curing agent, and a flux compound having an acid group is disclosed. The amount of heat generated between 60 and 155°C in the DSC curve obtained by differential scanning calorimetry when the semiconductor adhesive is heated at a heating rate of 10°C / min is 20 J / g or less. In the DSC curve, the onset temperature of the heat generation peak due to the curing reaction is 150°C or higher.
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Claims

1. A semiconductor adhesive comprising a thermosetting resin, a curing agent, and a flux compound having an acid group, The amount of heat generated between 60 and 155°C in the DSC curve obtained by differential scanning calorimetry (DSC) while heating the semiconductor adhesive at a heating rate of 10°C / min is 20 J / g or less. In the aforementioned DSC curve, the onset temperature of the exothermic peak due to the curing reaction is 150°C or higher. Adhesives for semiconductors.

2. The semiconductor adhesive according to claim 1, wherein the flux compound is an organic acid having a carboxyl group.

3. The semiconductor adhesive according to claim 1 or 2, wherein the melting point of the flux compound is 50 to 200°C.

4. The semiconductor adhesive according to any one of claims 1 to 3, wherein the curing agent comprises an imidazole-based curing agent.

5. A semiconductor adhesive according to any one of claims 1 to 4, further comprising a thermoplastic resin.

6. A semiconductor adhesive according to any one of claims 1 to 5, used to seal at least a portion of the electrically connected connection parts in a semiconductor device in which a plurality of connection parts of a semiconductor chip and a plurality of connection parts of a wiring circuit board are electrically connected to each other, or in a semiconductor device in which a plurality of connection parts of each of a plurality of semiconductor chips are electrically connected to each other.

7. The semiconductor adhesive according to claim 6, wherein at least a portion of the plurality of connection portions of the semiconductor chip includes solder bumps.

8. A semiconductor adhesive sheet comprising a support substrate and an adhesive layer provided on the support substrate, the adhesive layer containing the semiconductor adhesive described in any one of claims 1 to 7.

9. The semiconductor adhesive sheet according to claim 8, wherein the support substrate comprises a plastic film and an adhesive layer provided on the plastic film, and the adhesive layer is provided on the adhesive layer.

10. A step of forming a joint, wherein an adhesive is interposed between a semiconductor chip having multiple connection parts and a wiring circuit board having multiple connection parts, and the semiconductor chip, the wiring circuit board, and the adhesive are heated and pressurized so that the connection parts of the semiconductor chip and the connection parts of the wiring circuit board are electrically connected to each other, and at least a portion of the electrically connected connection parts are sealed by the cured adhesive. A process for forming a joint, wherein the semiconductor chips and the adhesive are heated and pressurized while an adhesive is interposed between the semiconductor chips having multiple connection portions, thereby electrically connecting the connection portions of the semiconductor chips to each other, and at least a portion of the electrically connected connection portions are sealed by the cured adhesive, and A process for forming a bond, in which an adhesive is interposed between a semiconductor chip having multiple connection points and a semiconductor wafer having multiple connection points, and the semiconductor chip, the semiconductor wafer, and the adhesive are heated so that the connection points of the semiconductor chip and the connection points of the semiconductor wafer are electrically connected to each other, and at least a portion of the electrically connected connection points are sealed by the cured adhesive. It comprises at least one process selected from, The adhesive is a semiconductor adhesive according to any one of claims 1 to 5. A method for manufacturing semiconductor devices.

11. The said method, A step of preparing a semiconductor wafer having a wafer body having two main surfaces, and a plurality of connection portions provided on one of the main surfaces of the wafer body, A step of providing an adhesive layer containing the adhesive on the main surface of the wafer body on the connection side, A step of thinning the wafer body by grinding the main surface of the wafer body opposite to the connection portion, A step of forming the semiconductor chip and the adhesive semiconductor chip having the adhesive layer by dicing the thinned wafer body and the adhesive layer, It also has, The method according to claim 10.

Citation Information

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