High-temperature stable dielectric composition

Abstract

A dielectric composition containing a barium titanate-based matrix main component and a minor component is disclosed. [Solution] The dielectric composition comprises at least one of the following minor components: a first minor component which is an oxide or carbonate of Yb; a second minor component which is an oxide containing Ba and Zr; a third minor component which is an oxide or carbonate of Y; a fourth minor component which is an oxide or carbonate of Mg; a fifth minor component which is an oxide or carbonate of V and Mn; and a sixth minor component which is an oxide or carbonate of Si, wherein at least one minor component comprises the first minor component and satisfies the X8R characteristics specified in the EIA standard.

Description

[Technical Field]

[0001] The present invention relates to dielectric compositions having high-temperature stability, and more particularly to dielectric compositions that satisfy X8R characteristics. [Background technology]

[0002] Multilayer ceramic chip capacitors offer high capacitance and reliability, while their relatively small size makes them widely used in fields requiring precision and stability, such as automobiles and motors.

[0003] Multilayer ceramic capacitors are subject to various requirements, including capacitance, temperature stability, and voltage stability. In particular, multilayer ceramic capacitors used in automotive electrical systems operate at high temperatures, so their capacitance must not change even at high temperatures. In this regard, the Electronic Industries Association (EIA) specifies that a multilayer ceramic capacitor satisfies the X8R characteristic if the change in capacitance between -55°C and 150°C is within ±15% of the reference capacitance at 25°C. [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] The present invention aims to provide a dielectric composition that satisfies the X8R standard. [Means for solving the problem]

[0005] A dielectric composition according to one aspect of the present invention made to achieve the above objective comprises a barium titanate-based matrix main component and a minor component, the minor component comprising: a first minor component comprising one or more selected from the group consisting of oxides and carbonates of element Yb; a second minor component comprising one or more selected from the group consisting of oxides containing Ba and Zr; a third minor component comprising one or more selected from the group consisting of oxides and carbonates of element Y; a fourth minor component comprising one or more oxides and carbonates of a valence-fixed acceptor element including Mg; and V, The material comprises at least one of the following subcomponents: a fifth subcomponent comprising one or more valence-variable acceptor elements selected from the group consisting of oxides and carbonates of Mn, Cr, Fe, Ni, Co, Cu, and Zn; and a sixth subcomponent comprising one or more elements selected from the group consisting of oxides, carbonates, and glass of Si. The at least one subcomponent comprises the first subcomponent, and the content of Yb in the first subcomponent is 0.2 to 6 moles per 100 moles of the main component of the base material. [Effects of the Invention]

[0006] The dielectric composition according to the present invention satisfies the X8R characteristics of the EIA standard. [Brief explanation of the drawing]

[0007] [Figure 1] This is a perspective view showing a multilayer ceramic capacitor according to an embodiment of the present invention. [Figure 2] This is a perspective view showing multiple electrode units of a multilayer ceramic capacitor according to an embodiment of the present invention. [Modes for carrying out the invention]

[0008] Hereinafter, the most preferred embodiments of the present invention will be described with reference to the drawings in order to enable a person with ordinary skill in the art to easily implement the technical idea of ​​the present invention. First, in assigning reference numerals to the components of each drawing, the same component will be given the same reference numeral as much as possible, even if it is shown on other drawings. Furthermore, in describing the present invention, if it is determined that a specific description of a related known configuration or function may obscure the gist of the present invention, such a detailed description will be omitted.

[0009] The present invention relates to dielectric compositions, and electronic components containing dielectric compositions include capacitors, inductors, piezoelectric elements, varistors, or thermistors. In the following, a multilayer ceramic capacitor (MLCC) will be described as an example of a dielectric composition and electronic component.

[0010] <Multilayer ceramic capacitors>

[0011] Figure 1 is a perspective view showing a multilayer ceramic capacitor according to an embodiment of the present invention, and Figure 2 is a perspective view showing multiple electrode units of a multilayer ceramic capacitor according to an embodiment of the present invention.

[0012] As shown in Figure 1, the multilayer ceramic capacitor according to an embodiment of the present invention is configured to include a dielectric 100, a first external electrode 220, and a second external electrode 240.

[0013] The dielectric 100 is composed of a rectangular parallelepiped having a top surface, a bottom surface, a first side surface, a second side surface facing the first side surface, a third side surface, and a fourth side surface facing the third side surface. The first side surface is the left side in the drawing, the second side surface is the right side in the drawing, the third side surface is the front surface in the drawing, and the fourth side surface is the rear surface in the drawing.

[0014] The dielectric 100 comprises a plurality of dielectric sheets. The plurality of dielectric sheets are stacked. Each dielectric sheet contains a dielectric composition and is formed by sintering the dielectric composition.

[0015] The first external electrode 220 is an electrode positioned on the first side surface of the dielectric 100. The first external electrode 220 is formed extending from the first side surface of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100. The second external electrode 240 is an electrode positioned on the second side surface of the dielectric 100. The second external electrode 240 is formed extending from the second side surface of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100. The first external electrode 220 and the second external electrode 240 are formed to face each other at a predetermined distance apart on the top, bottom, third, and fourth sides of the dielectric 100.

[0016] As shown in Figure 2, the multilayer ceramic capacitor according to an embodiment of the present invention further comprises a plurality of electrode units 300. In this case, the plurality of electrode units 300 are stacked to form a laminate, and this laminate is placed inside the dielectric 100.

[0017] Multiple electrode units 300 are stacked vertically on the drawing and arranged inside the dielectric 100. Each electrode unit 300 comprises a first electrode set 320 and a second electrode set 340, and the first electrode set 320 and the second electrode set 340 are stacked alternately.

[0018] The first electrode set 320 is composed of a rectangular, plate-shaped conductor. The first electrode set 320 is positioned off-center from inside the dielectric 100 towards the first side surface of the dielectric 100. The first end of the first electrode set 320 is connected to the first external electrode 220 on the first side surface of the dielectric 100.

[0019] The second electrode set 340 is composed of a plate-shaped conductor formed in a rectangular shape. The second electrode set 340 is disposed biased from the inside of the dielectric 100 toward the second side surface of the dielectric 100. The first end portion of the second electrode set 340 is connected to the second external electrode 240 on the second side surface of the dielectric 100.

[0020] The first electrode set 320 and the second electrode set 340 are respectively and dispersedly arranged on two adjacent dielectric sheets among the dielectric sheets included in the dielectric 100. The first electrode set 320 and the second electrode set 340 partially overlap with each other with the dielectric sheet 110 interposed therebetween.

[0021] <Dielectric Composition and Method for Manufacturing the Same>

[0022] Hereinafter, the dielectric composition and the method for manufacturing the same according to the embodiment of the present invention will be described in detail. The dielectric composition forms the above-described dielectric 100. However, in order to avoid redundant explanations, the contents overlapping with the above-described contents are omitted.

[0023] The dielectric composition according to the embodiment of the present invention contains a base material main component containing a rare earth element. The base material main component is a barium titanate-based compound containing Ba and Ti, and preferably BaTiO3. Further, the dielectric composition according to the embodiment of the present invention additionally contains sub-components, and the sub-components may include first to sixth sub-components.

[0024] The dielectric composition according to the embodiment of the present invention contains the sub-components shown in Table 1 per 100 moles of the base material BaTiO3.

[0025]

Table 1

[0026] In order to realize the X8R temperature characteristic, conventionally, a dielectric composition to which a rare earth substance (such as Yb2O3) for increasing the Curie temperature is added or a base material modified by substitution or the like instead of BaTiO3 which is the base material main component (Ba 1-x Ca xDielectric compositions using TiO3 and other materials have been developed. In the case of dielectric compositions with added rare earth material Yb2O3, the X8R standard can be met, where the Curie temperature rises while the Temperature Coefficient of Capacitance (TCC) at 150°C changes within the range of +15% to -15%. However, dielectric compositions with added Yb2O3 have the problem that the sintering temperature increases as more Yb2O3 is added in order to achieve the X8R temperature characteristics. If the sintering temperature becomes too high, the heat generated by the MLCC increases and the Ni internal electrodes are damaged, which can lead to problems with the connectivity of the internal electrodes and complicate the process. In addition, among the base materials modified by substitution, a widely known example is one in which Ca is substituted at the position of Ba (Ba 1-x Ca x )TiO3, i.e., BCT, and when such BCT is used alone or in mixtures in a dielectric composition, the change in capacitance with temperature is reduced, and at the same time, the X8R standard can be met, which requires that the Curie temperature changes within the range of +15% to -15% as it rises. However, dielectric compositions using BCT as a base material have the disadvantage that BCT synthesis is difficult. During BCT synthesis, Ca initially substitutes for Ba, but as the amount of Ca added increases, it gradually substitutes for Ti other than Ba, so Ba(Ti 1-x Ca x ) becomes O3, and in this case the Curie temperature actually becomes lower, so it is not suitable for the X8R composition. In addition, BCT has the problem that its dielectric constant is lower than that of compositions with Yb2O3 added, which is somewhat disadvantageous in achieving capacity.

[0027] To address this, the dielectric composition according to the embodiment of the present invention is characterized by providing a dielectric composition that can suppress the rise in sintering temperature while satisfying the X8R standard, which must change within the range of 15% to -15% by adding Yb2O3 and BaZrO3 to BaTiO3. In the dielectric composition according to the embodiment of the present invention, by adding BaZrO3 to BaTiO3, the amount of Yb2O3 added is reduced, which can suppress the rise in sintering temperature. Due to BaZrO3, the overall dielectric constant is reduced, and at the same time, the change in dielectric constant with temperature is reduced, which can mitigate the sharp change in dielectric constant around the Curie temperature. In other words, the dielectric composition according to the embodiment of the present invention satisfies the X8R (-55℃~150℃) characteristics specified in the EIA standard, and a highly reliable dielectric composition and a multilayer ceramic capacitor containing the same can be realized.

[0028] The components of the dielectric composition according to embodiments of the present invention will be described in more detail below.

[0029] <Main component of base material>

[0030] The dielectric composition according to the embodiment of the present invention contains a main base material component comprising Ba and Ti. In the embodiment, the main base material component is BaTiO3.

[0031] The main component of the base material is included in the dielectric composition in powder form. The average particle size of the main component of the base material powder is not particularly limited, but is preferably 1000 nm or less. Preferably, the average particle size of the main component of the base material powder is 200 nm to 350 nm, and more preferably 250 nm.

[0032] <1st subcomponent>

[0033] The dielectric composition according to the embodiment of the present invention includes one or more selected from the group consisting of oxides and carbonates of element Yb as a first minor component. Alternatively, the first minor component may include one or more selected from the group consisting of oxides and carbonates of one or more other rare earth elements, namely Sc, Lu, and Tm, instead of element Yb.

[0034] The first minor component is present in an amount of 0.2 to 6 moles per 100 moles of the main component of the base material. The content of the first minor component is based on the content of the elements contained in the first minor component, without distinguishing between the additive form, such as oxide or carbonate. For example, the total content of the elements contained in the first minor component is 0.2 to 6 moles per 100 moles of the main component of the base material. As an example, if the first minor component is Yb2O3, and we assume that there are 2 moles of Yb2O3 per 100 moles of BaTiO3, then there are 4 moles of the metal Yb contained in the first minor component. Therefore, in this case, 4 moles of Yb are contained per 100 moles of BaTiO3.

[0035] The first minor component has the effect of shifting the Curie temperature to the higher temperature side, thereby improving the stability of capacitance due to temperature changes. In other words, the first minor component plays a role in preventing a decrease in the reliability of multilayer ceramic capacitors formed with dielectric compositions according to embodiments of the present invention.

[0036] If the Yb element content in the first minor component is less than 0.2 moles per 100 moles of the main component of the base material, the improvement effect on the high-temperature TCC (temperature coefficient of capacitance) may not be significant. If the Yb element content in the first minor component exceeds 6 moles per 100 moles of the main component of the base material, the firing-related properties will deteriorate.

[0037] <Second subcomponent>

[0038] The dielectric composition according to the embodiment of the present invention contains one or more oxides selected from the group consisting of Ba and Zr as a second minor component. The second minor component is preferably BaZrO3 or a mixture of BaO and ZrO2, but is not limited thereto. In the case of BaZrO3, the ratio of Ba and Zr is not particularly limited, and the molar ratio of Ba to Zr (Ba / Zr) may be 0.5 to 1.5, and preferably 0.9 to 1.1.

[0039] When a second minor component is added, the overall dielectric constant decreases, and the change in dielectric constant with temperature becomes flatter. The second minor component is included in an amount of 0.1 to 3 moles or less per 100 moles of the main component of the base material. If the content of the second minor component is less than 0.1 moles per 100 moles of the main component of the base material, the high-temperature TCC improvement effect will not be significant, and if the content of the second minor component exceeds 3 moles per 100 moles of the main component of the base material, the high-temperature withstand voltage characteristics will deteriorate.

[0040] <Third subcomponent>

[0041] The dielectric composition according to the embodiment of the present invention contains one or more third minor components selected from the group consisting of oxides and carbonates of element Y. Alternatively, the third minor component may contain one or more third minor components selected from the group consisting of oxides and carbonates of one or more other rare earth elements, such as Dy, Ho, Tb, Gd, Eu, and Er, instead of element Y. The third minor component is preferably, but not limited to, Y2O3, which is a Y oxide.

[0042] The third minor component is contained in an amount of 2 moles or less per 100 moles of the main component of the base material. The content of the third minor component is based on the content of the elements contained in the third minor component, without distinguishing between the additive form, such as oxide or carbonate. For example, the total content of the elements contained in the third minor component is 2 moles or less per 100 moles of the main component of the base material. As an example, if the third minor component is Y2O3, and we assume that there are 0.3 moles of Y2O3 per 100 moles of BaTiO3, then there are 0.6 moles of the metal Y contained in the third minor component. Therefore, in this case, 0.6 moles of Y are contained per 100 moles of BaTiO3.

[0043] The third minor component helps improve high-temperature TCC (Total Curve Cost) and prevents a decrease in the reliability of multilayer ceramic capacitors formed with dielectric compositions. However, if the content of element Y in the third minor component exceeds 2 moles per 100 moles of the main component of the base material, this effect will be insufficient.

[0044] <4th subcomponent>

[0045] The dielectric composition according to the embodiment of the present invention contains one or more oxides and carbonates of a fixed-valence acceptor element containing Mg as a fourth minor component.

[0046] The fourth minor component is present in an amount of 0.1 to 2 moles or less per 100 moles of the main component of the base material. The content of the fourth minor component is based on the content of Mg element contained in the fourth minor component, without distinguishing between its additive form, such as oxide or carbonate. For example, the content of Mg element contained in the fourth minor component is 0.1 to 2 moles or less per 100 moles of the main component of the base material.

[0047] If the content of the fourth minor component is less than 0.1 moles or more than 2 moles relative to 100 moles of the main component of the dielectric base material, it is undesirable because it results in a low dielectric constant and poor high-temperature withstand voltage characteristics.

[0048] <5th subcomponent>

[0049] The dielectric composition according to the embodiment of the present invention contains, as a fifth minor component, one or more elements selected from the group consisting of oxides and carbonates of valence-variable acceptor elements, including one or more of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn. The fifth minor component is preferably one or more elements selected from the group consisting of V2O5 and MnO2, but is not limited thereto.

[0050] The fifth minor component is present in an amount of 0.03 to 4 moles or less per 100 moles of the main component of the base material. The content of the fifth minor component is based on the content of the elements contained in the fifth minor component, without distinguishing between its additive form, such as oxide or carbonate. For example, the total content of the elements contained in the fifth minor component is 0.03 to 4 moles per 100 moles of the main component of the base material.

[0051] The fifth sub-component improves the high-temperature breakdown voltage characteristics by improving the reduction resistance of the dielectric composition. If the content of the fifth sub-component is less than 0.03 mole parts, the high-temperature breakdown voltage becomes low, and when it exceeds 4 mole parts, the reliability of the dielectric composition decreases (for example, a decrease in dielectric constant, etc.).

[0052] <Sixth sub-component>

[0053] The dielectric composition according to an embodiment of the present invention contains one or more selected from the group consisting of an oxide of Si element, a carbonate of Si element, and a glass containing Si element as the sixth sub-component. Preferably, the sixth sub-component is Ba x Ca 1-x It contains a composite oxide represented by SiO3 (where x is 0.3 to 0.8). The x value of the composite oxide is 0.3 to 0.8. Here, if the x value is too small, the dielectric properties deteriorate due to the reaction between SiO2 and BaTiO3 which is the main component. Conversely, if the x value is too large, the melting point becomes high and the properties related to firing deteriorate.

[0054] The sixth sub-component is contained in an amount of 0.1 to 5 mole parts or less with respect to 100 mole parts of the base material main component. When the content of the sixth sub-component is less than 0.1 mole part, the rate of change of capacitance with temperature increases. Conversely, when the content of the sixth sub-component exceeds 5 mole parts, there are problems such as deterioration of sinterability and density, and generation of secondary phases, which is not preferable.

[0055] Hereinafter, the configuration and effects of the present invention will be described in more detail with specific examples and comparative examples, but these examples are merely for more clearly understanding the present invention and are not intended to limit the scope of the present invention.

[0056] As a starting material for forming the dielectric layer, the main component BaTiO3 powder was prepared, and Yb2O3, BaZrO3, Y2O3, MgCO3, V2O5, MnO2, Ba 0.6 Ca 0.4 SiO3 were each prepared. Here, the BaTiO3 mixed solid solution powder which is the base material powder containing the main component was produced by applying the solid phase method as follows.

[0057] The starting materials were BaCO3 and TiO2. These starting material powders were mixed in a ball mill and calcined at a temperature of 900-1000°C to prepare the main component base material powder. After mixing the main component base material powder with the auxiliary component additive powder in the component ratios shown in Table 2, the raw material powder containing the main and auxiliary components was mixed with ethanol / toluene, a dispersant and a binder using zirconia balls as a mixing / dispersion medium, and ball milled for a predetermined time (e.g., 20 hours).

[0058] The manufactured slurry was formed into a 10 μm thick molded sheet using a doctor blade coater, and the Ni internal electrode was printed onto this molded sheet. The upper and lower covers were made by laminating 25 layers of cover sheets and then pressurizing and laminating 21 layers of printed active sheets to create a crimped bar. The crimped bar was cut into 3225 size chips (length × width × thickness of 3.2 mm × 2.5 mm × 2.5 mm) using a cutting machine.

[0059] After the manufacturing of the chips was completed, they were calcined in a reducing atmosphere (0.1% H2 / 99.9% N2, H2O / H2 / N2 atmosphere) at a temperature of 1150°C to 1350°C for more than one hour, and then re-oxidized in a nitrogen (N2) atmosphere at a temperature of 1000°C for more than two hours to perform heat treatment.

[0060] The external electrodes were completed by applying copper paste to the fired chips and then performing a termination process and electrode firing.

[0061] Capacitance (dielectric constant), change in capacitance with temperature (TCC), and sintering temperature were measured and evaluated for the completed multilayer ceramic capacitor test specimens as described above. In addition, room-temperature insulation resistance, high-temperature accelerated lifetime, and loss coefficient were also evaluated, but these are not described here.

[0062] The capacitance at room temperature was measured using an LCR-meter under conditions of 1 kHz and AC 0.2 V / μm. The dielectric constant of the multilayer ceramic capacitor (MLCC) chip was calculated from the capacitance, dielectric thickness, internal electrode area, and number of layers of the MLCC chip.

[0063] The change in capacitance due to temperature was measured in the temperature range of -55°C to 150°C. Within this temperature range, the capacitance change was measured using an LCR-meter under conditions of 1 kHz and 1 Vrms. The percentage change in capacitance at each temperature relative to the capacitance at 25°C was measured. This specification describes the capacitance change at 150°C. A capacitance change rate (Temperature Coefficient of Capacitance, TCC) within ±15% at 150°C was judged as good; otherwise, it was judged as poor.

[0064] Table 2 below shows the composition of the comparative examples, and Table 3 shows the characteristics of the multilayer ceramic capacitor chips corresponding to the compositions specified in Table 2. Comparative Examples 1 to 4 in Table 2 differ from the examples described later in that they do not contain BaZrO3, which is the second minor component.

[0065] [Table 2]

[0066] [Table 3]

[0067] Comparative Examples 1-4 in Table 2 show samples in which the content of the first minor component Yb was varied while the content of the third minor component Y was fixed at 0 moles, the content of the fourth minor component Mg at 1.45 moles, the total content of the fifth minor component (V, Mn) at 0.25 moles, and the content of the sixth minor component at 2.7 moles, with no second minor component added. Table 3 shows the characteristics of the samples corresponding to Comparative Examples 1-4 in Table 2. In the range where the content of the first minor component Yb is 4.36 moles or less (Comparative Examples 1-2), the high-temperature TCC (150°C) was outside ±15%, indicating vulnerability to temperature changes. In the range where the content of the first minor component Yb is 8.72 moles or more (Comparative Examples 3-4), the high-temperature TCC was within ±15%, meeting the X8R standard. However, as the Yb content increases, the rate of volume change decreases, but the sintering temperature increases, leading to problems such as damage to the Ni internal electrode. According to comparative examples of the present invention, when the content of the first minor component Yb is 10 moles or more, a sintering temperature of 1300°C or higher can be obtained.

[0068] To address this, the dielectric composition according to the embodiment of the present invention is characterized by providing a dielectric composition that can suppress the rise in sintering temperature while satisfying the X8R standard, which requires that the amount of Yb2O3 and BaZrO3 added to BaTiO3 must vary within a range of 15% to -15%.

[0069] Table 4 below shows the composition of the examples, and Table 5 shows the characteristics of the multilayer ceramic capacitor chips corresponding to the compositions specified in Table 4. Examples 2 to 6 in Table 4 differ from the comparative examples mentioned above in that they contain BaZrO3 as the second minor component.

[0070] [Table 4]

[0071] [Table 5]

[0072] Examples 1-6 in Table 4 show samples in which the content of the second minor component was varied while the content of the first minor component Yb was fixed at 2 moles, the content of the third minor component Y at 0 moles, the content of the fourth minor component Mg at 1.45 moles, the total content of the fifth minor component (V, Mn) at 0.25 moles, and the content of the sixth minor component at 2.7 moles. Table 5 shows the characteristics of the samples corresponding to Examples 1-6 in Table 4. When the content of the second minor component was 0 moles (Example 1), the high-temperature TCC (150°C) deviated from ±15%, indicating vulnerability to temperature changes. Similarly, when the content of the second minor component exceeded 3 moles (Example 6), the high-temperature TCC (150°C) deviated from ±15%, also indicating vulnerability to temperature changes. In the range where the content of the second minor component exceeds 0 moles (e.g., 0.1 moles or more) but is 3 moles or less (Examples 2-5), the high-temperature TCC was within ±15%, which was shown to satisfy the X8R standard. Therefore, the appropriate content range for the second minor component is 0.1 to 3 moles or less per 100 moles of the main component of the base material.

[0073] Examples 2-5 demonstrated that the addition of BaZrO3, a second minor component, resulted in a high-temperature TCC of within ±15%, meeting the X8R standard while maintaining a sintering temperature within the range of 1245°C to 1265°C. In other words, the sintering temperatures of Examples 2-5 were lower than those of Comparative Examples 3-4, which ranged from 1290°C to 1310°C. Thus, the addition of BaZrO3, a second minor component, to the dielectric composition allows the X8R standard to be met without increasing the content of Yb2O3, a first minor component, and furthermore, it can reduce the content of Yb2O3, thus demonstrating the effect of suppressing the rise in sintering temperature.

[0074] [Table 6]

[0075] [Table 7]

[0076] Examples 7-11 in Table 6 show samples in which the content of the first minor component was varied while the content of the second minor component was fixed at 1.5 moles, the content of the third minor component Y at 0 moles, the content of the fourth minor component Mg at 1.45 moles, the total content of the fifth minor component (V, Mn) at 0.25 moles, and the content of the sixth minor component at 2.7 moles. Table 7 shows the characteristics of the samples corresponding to Examples 7-11 in Table 6. When the content of the first minor component Yb was 0 moles (Example 7), the high-temperature TCC (150°C) deviated from ±15%, indicating vulnerability to temperature changes. Similarly, when the content of the first minor component Yb exceeded 6 moles (Example 11), the high-temperature TCC (150°C) deviated from ±15%, indicating vulnerability to temperature changes. In the range where the content of the first minor component Yb exceeds 0 moles (e.g., 0.2 moles or more) but is 6 moles or less (Examples 8-10), the high-temperature TCC was within ±15%, which was shown to satisfy the X8R standard, and the sintering temperature was also shown to be lower than that of the comparative examples. Therefore, the appropriate content range for the first minor component Yb is 0.2 to 6 moles or less in elemental proportion per 100 moles of the main component of the base material.

[0077] [Table 8]

[0078] [Table 9]

[0079] Examples 12-14 in Table 8 show samples in which the content of the third minor component Y was varied while the content of the first minor component Yb was fixed at 2 moles, the content of the second minor component at 1.5 moles, the content of the fourth minor component Mg at 1.45 moles, the total content of the fifth minor component (V, Mn) at 0.25 moles, and the content of the sixth minor component at 2.7 moles. Table 9 shows the characteristics of the samples corresponding to Examples 12-14 in Table 8. When the content of the third minor component Y exceeded 2 moles (Example 14), the high-temperature TCC (150°C) fell outside ±15%, indicating a problem of vulnerability to temperature changes. In the range where the content of the third minor component Y was 2 moles or less (Examples 12-13), the high-temperature TCC was within ±15%, demonstrating compliance with the X8R standard, and the sintering temperature was also shown to be relatively low. Therefore, the appropriate content range for the third minor component Y is 2 moles or less in elemental proportion per 100 moles of the main component of the base material.

[0080] The present invention is not limited by the embodiments and drawings described above. Therefore, it will be obvious to those with ordinary skill in the art that various forms of substitution, modification, and alteration are possible without departing from the technical spirit of the present invention. [Explanation of symbols]

[0081] 100 Dielectric 220 1st external electrode 240 2nd external electrode 300 electrode units 320 First Electrode Set 340 Second Electrode Set

Claims

1. In a dielectric composition containing a barium titanate-based matrix main component and auxiliary components, The aforementioned minor component is, A first minor component comprising one or more selected from the group consisting of oxides and carbonates of element Yb, A second minor component comprising one or more selected from the group consisting of oxides containing Ba and Zr, A third minor component comprising one or more selected from the group consisting of oxides and carbonates of element Y, A fourth minor component containing one or more oxides and carbonates of a valence-fixed acceptor element including Mg, A fifth minor component comprising one or more oxides and carbonates selected from the group consisting of valence-variable acceptor elements, including one or more of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn, It contains at least one minor component from the sixth component, which includes one or more selected from the group consisting of oxides, carbonates, and glasses of the element Si, The at least one subcomponent includes the first subcomponent, A dielectric composition characterized in that the content of element Yb contained in the first minor component is 0.2 to 6 moles per 100 moles of the main component of the base material.

2. The at least one subcomponent further comprises the second subcomponent, The dielectric composition according to claim 1, characterized in that the content of the second minor component is 0.1 to 3 moles per 100 moles of the main component of the base material.

3. The at least one subcomponent further includes the third subcomponent, The dielectric composition according to claim 1, characterized in that the content of element Y contained in the third minor component is 2 moles or less per 100 moles of the main component of the base material.

4. The at least one subcomponent further includes the fourth subcomponent, The dielectric composition according to claim 1, characterized in that the content of Mg element in the fourth minor component is 0.1 to 2 moles per 100 moles of the main component of the base material.

5. The aforementioned at least one subcomponent further comprises the fifth subcomponent, The dielectric composition according to claim 1, characterized in that the content of the valence-variable acceptor element contained in the fifth minor component is 0.03 to 4 moles per 100 moles of the main component of the base material.

6. The at least one subcomponent further comprises the sixth subcomponent, The dielectric composition according to claim 1, characterized in that the content of the sixth minor component is 0.1 to 5 moles per 100 moles of the main component of the base material.

7. The sixth subcomponent is Ba ｘ Ca １－ｘ SiO ３ The dielectric composition according to claim 6, characterized by containing a composite oxide represented by (where x is 0.3 to 0.8).

8. In a method for manufacturing a dielectric composition, Steps include preparing the main components of the barium titanate base material, A step of preparing at least one subcomponent, including the first subcomponent, from among a first subcomponent containing one or more selected from the group consisting of oxides and carbonates of element Yb, a second subcomponent containing one or more selected from the group consisting of oxides and carbonates of Ba and Zr, a third subcomponent containing one or more selected from the group consisting of oxides and carbonates of element Y, a fourth subcomponent containing one or more of oxides and carbonates of a valence-fixed acceptor element including Mg, a fifth subcomponent containing one or more selected from the group consisting of oxides and carbonates of a valence-variable acceptor element including one or more of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn, and a sixth subcomponent containing one or more selected from the group consisting of oxides, carbonates, and glass of element Si, A step of producing a mixture containing the main component of the base material and the at least one minor component, The steps include: firing the mixture, Includes, A method for producing a dielectric composition, characterized in that the content of element Yb in the first minor component is 0.2 to 6 moles per 100 moles of the main component of the base material.

9. The method for producing a dielectric composition according to claim 8, characterized in that the sintering temperature of the mixture is 1150°C or higher.

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