Method for manufacturing silicon nitride substrate
The production of silicon nitride substrates using a composite powder of metal silicon and silicon nitride powders, combined with sintering aids, achieves uniform nitridation, addressing rapid reaction issues and enhancing thermal conductivity and mechanical properties, thus meeting the demands of power devices.
Patent Information
- Application Number
- JP2025505534
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2024-07-03
- Filing Date
- 2024-10-28
- Publication Date
- 2025-12-25
- Estimated Expiration
- 2044-10-28
AI Technical Summary
Conventional methods for producing silicon nitride substrates face issues with rapid nitriding reactions of silicon powder, leading to heat generation, non-uniform reactions, and the inability to achieve high thermal conductivity and mechanical properties simultaneously, which are crucial for power device applications.
A method involving the use of a composite powder formed by mixing metal silicon powder and silicon nitride powder, followed by pulverization, and subsequent steps of mixing with a sintering aid and dispersion medium to form a sheet, which is then nitrided and sintered to produce a silicon nitride substrate, utilizing a mechanochemical effect to achieve uniform nitridation and prevent rapid reactions.
The method results in a silicon nitride substrate with high heat dissipation properties and excellent mechanical properties, overcoming the limitations of conventional methods by reducing production costs and ensuring uniform nitridation.