Ferroelectric memory device, method for reading information from ferroelectric memory device, and method for writing and reading information from ferroelectric memory device
The ferroelectric memory device achieves high-speed reading and increased storage capacity by using a conductive probe and signal processing unit to measure tunneling current in a single-crystal ferroelectric layer with amorphous structure, overcoming limitations in existing technologies.
Patent Information
- Application Number
- JP2021210490
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2021-09-29
- Filing Date
- 2021-12-24
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2041-12-24
AI Technical Summary
Conventional ferroelectric memory devices struggle with high-speed reading of information stored in ferroelectric layers at high recording densities due to limitations in dielectric materials, probe stability, and precision control of the probe-distance, leading to inefficient data transfer and increased power consumption.
A ferroelectric memory device with a ferroelectric recording medium, conductive probe, probe slider, and read/write signal processing unit that applies bias voltages to measure tunneling current for high-speed information reading, utilizing a ferroelectric layer with a single-crystal film and amorphous structure for enhanced crystallinity and polarization inversion.
Enables high-speed reading of information from ferroelectric recording media with increased storage capacity and reduced power consumption, addressing the limitations of existing technologies.