Plasma enhancement treatment for semiconductor manufacturing and related processing chambers, methods, and systems

Abstract

The present disclosure relates to plasma-enhanced processing for semiconductor manufacturing and related processing chambers, methods, and systems. In one or more embodiments, a method of substrate processing comprises the steps of igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate located in a process volume to form a layer on the substrate. The method comprises the steps of maintaining the process volume at a pressure of less than 100 mTorr, and heating the substrate to a target temperature of 500 degrees Celsius or less.

Description

Technology Field

[0001] The present disclosure relates to plasma enhancement treatment for semiconductor manufacturing and related treatment chambers, methods, and systems. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing substrates involves depositing a material, such as a semiconductor material or a conductive material, onto the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials onto the surface of a substrate in a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, the process may entail non-uniformities, which may result in impaired device performance and / or reduced throughput. For example, gas activation may be limited or / or non-uniform, which may lead to limited or non-uniform film growth, hydrogen desorption, and / or dopant concentration. Gas activation and / or dopant concentration may be limited, for example, at relatively low processing temperatures and / or low pressures for device production (such as complementary field-effect transistor (CFET) devices). Furthermore, relatively higher processing temperatures may result in unintended dopant diffusion and / or impaired device performance.

[0004] Therefore, there is a need for improved devices and methods in semiconductor processing.

[0005] The present disclosure relates to plasma enhancement treatment for semiconductor manufacturing and related treatment chambers, methods, and systems.

[0006] In one or more embodiments, the method of substrate processing comprises the steps of igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate located in a process volume to form a layer on the substrate. The method comprises the steps of maintaining the process volume at a pressure of less than 100 mTorr, and heating the substrate to a target temperature of 500 degrees or less.

[0007] In one or more embodiments, the method of substrate processing comprises the steps of igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate located in a process volume to form a layer on the substrate. The flow of the deposition precursor includes a first flow through the cover of the processing chamber and a second flow through the sidewall of the processing chamber.

[0008] In one or more embodiments, the processing chamber comprises a chamber body that at least partially defines a processing volume, a first gas inlet formed in a side wall of the chamber body, and a second gas inlet formed within a cover of the chamber body. The processing chamber comprises a substrate support disposed in the processing volume, and one or more induction coils disposed outside the processing volume. Brief explanation of the drawing

[0009] In a manner that allows the features of the above-mentioned disclosure to be understood in detail, a more specific description of the disclosure briefly summarized above may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings are merely illustrative of exemplary embodiments and should not be construed as limiting the scope of the disclosure, and that other equally valid embodiments may be permitted. FIG. 1 is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. FIG. 2 is a schematic partial cross-sectional plan view of a conductive plate shown in FIG. 1 according to one or more embodiments. FIG. 3 is a schematic side cross-sectional view of a processing chamber according to one or more embodiments. FIG. 4a is a schematic diagram of a semiconductor layer during a passivation operation according to one or more embodiments. FIG. 4b is a schematic diagram of a semiconductor layer during a plasma-enhanced deposition operation according to one or more embodiments. FIG. 5 is a schematic block diagram of a method for processing a substrate for semiconductor manufacturing according to one or more embodiments. FIG. 6 is a schematic block diagram of a method for processing a substrate for semiconductor manufacturing according to one or more embodiments. For ease of understanding, the same reference numbers have been used where possible to designate identical elements common to the drawings. The elements and features of one embodiment are considered to be beneficially incorporated into other embodiments without further mention. Specific details for implementing the invention

[0010] The present disclosure relates to plasma enhancement treatment for semiconductor manufacturing and related treatment chambers, methods, and systems.

[0011] The present disclosure considers that terms such as “to combine,” “combining,” “combining,” and “combined” may include, but are not limited to, joining, embedding, welding, fusion, fusion, interference fit, and / or fastening by using, for example, bolts, threaded connections, pins, and / or screws. The present disclosure considers that terms such as “to combine,” “combining,” “combining,” and “combined” may include, but are not limited to, forming integrally. The present disclosure considers that terms such as “to combine,” “combining,” “combining,” and “combined” may include, but are not limited to, direct joining and / or indirect joining, such as indirect joining through components such as links, blocks, and / or frames.

[0012] FIG. 1 is a schematic side cross-sectional view of a processing chamber (100) according to one or more embodiments. The processing chamber (100) is a deposition chamber. In one or more embodiments, the processing chamber (100) is an epitaxial deposition chamber. The processing chamber (100) is utilized to grow an epitaxial film on a substrate (102), and the processing chamber (100) is used to supply plasma for plasma operations (e.g., plasma-assisted film deposition, ion implantation into the substrate (102), pre-cleaning of the substrate (102), etching of the substrate (102), and / or cleaning of the processing chamber (100). In one or more embodiments, the processing chamber (100) generates a cross-flow of precursors across the top surface (150) of the substrate (102). In FIG. 1, the processing chamber (100) in a processing condition is shown.

[0013] The processing chamber (100) comprises an upper body (156), a lower body (148) disposed below the upper body (156), and a flow module (112) disposed between the upper body (156) and the lower body (148). The upper body (156), the flow module (112), and the lower body (148) form the chamber body. A substrate support (106), an upper plate (108), one or more heat sources (143), and a lower plate (110) (e.g., a lower window, e.g., a lower dome) are disposed within the chamber body. The lower plate (110) is formed of an energy-transmitting material, e.g., transparent quartz. At least a portion of the lower plate (110) may be opaque. In one or more embodiments, the upper plate (108) comprises at least one opaque surface (171). In one or more embodiments, the plate (108) comprises transparent sections (172) (two or more may be included) and opaque sections (173) (two or more may be included). In one or more embodiments, the upper plate (108) is a window, such as an upper window, such as an upper dome. In such embodiments, the plate (108) is formed of an energy-transmitting material, such as transparent quartz. One or more heat sources (143) include a plurality of lower heat sources (143) operable to heat a processing volume (136) from one side of the substrate (102) (e.g., from below the substrate (102)). The chamber body and the plate (108) define at least partially the processing volume (136). In one or more embodiments, the lower heat sources (143) include lamps (e.g., halogen lamps or UV lamps). The present disclosure takes into account that other heat sources may be used for the various heat sources described herein (in addition to or instead of lamps).For example, resistive heaters, microwave power supply heaters, light-emitting diodes (LEDs), lasers (e.g., laser diodes), and / or any other suitable heat source may be used alone or in combination for the various heat sources described herein.

[0014] A substrate support (106) is positioned in the processing volume (136) and between the upper plate (108) and the lower plate (110). The substrate support (106) is positioned over one or more heat sources (143), and the substrate support (106) supports the substrate (102). The upper plate (108) is positioned between the substrate support (106) and the cover (154) of the processing chamber (100). In one or more embodiments, the substrate support (106) includes a susceptor. Other substrate supports (e.g., including one or more ring segment(s) and / or substrate carriers supporting one or more outer regions of the substrate (102)) are considered by the present disclosure. A plurality of lower heat sources (143) are positioned between the lower plate (110) and the bottom (152). A plurality of lower heat sources (143) form a portion of the lower heat source module (145).

[0015] The substrate support (106) may include one or more heaters (243) disposed within the substrate support (106). The heater(s) (243) may include resistive heaters. Other types of heaters are considered. The present disclosure considers that heat sources (141, 143) may be used in addition to the embedded heater(s) (243). The heater(s) (243) are configured to heat a substrate (102) disposed on the substrate support (106).

[0016] The processing volume (136) and the purge volume (138) are located between the plate (108) and the lower plate (110). The processing volume (136) and the purge volume (138) are part of the internal volume of the processing chamber (100). One or more liners (111, 163) are placed inside the chamber body.

[0017] The substrate support (106) includes an upper surface on which a substrate (102) is placed. The substrate support (106) is coupled to a shaft (118). In one or more embodiments, the substrate support (106) is coupled to the shaft (118) through one or more arms (119) that are coupled to the shaft (118). The shaft (118) is coupled to a motion assembly (121). The motion assembly (121) includes one or more actuators and / or adjustment devices that provide movement and / or adjustment within a processing volume (136) for the shaft (118) and / or the substrate support (106).

[0018] The substrate support (106) may include lift pin holes (107) disposed therein. Each of the lift pin holes (107) is sized to accommodate a lift pin (132) for lifting the substrate (102) from the substrate support (106) before or after the deposition process is performed. The lift pins (132) may be placed on lift pin stops (134) when the substrate support (106) is lowered from the process position to the transfer position. The lift pin stops (134) may include a plurality of arms (139) attached to a shaft (135).

[0019] The flow module (112) comprises one or more gas inlets (114) (e.g., multiple gas inlets), one or more purge gas inlets (164) (e.g., multiple purge gas inlets), and one or more gas exhaust outlets (116). One or more gas inlets (114) are part of the injection portion (113) of the chamber body, and one or more gas exhaust outlets (116) are part of the exhaust portion (115) of the chamber body. One or more gas inlets (114) and one or more purge gas inlets (164) are positioned on the side of the flow module (112) facing the one or more gas exhaust outlets (116). A preheating ring (117) is positioned below one or more gas inlets (114) and one or more gas exhaust outlets (116). The preheating ring (117) is positioned above one or more purge gas inlets (164). The preheating ring (117) may comprise a complete ring or one or more ring segments. One or more liners (111, 163) are placed on the inner surface of the flow module (112) and protect the flow module (112) from reactive gases used during deposition operations and / or cleaning operations. Gas inlet(s) (114) and purge gas inlet(s) (164) are each positioned to flow one or more process gases (P1) and one or more purge gases (P2) parallel to the top surface (150) of the substrate (102) placed within the processing volume (136). The gas inlet(s) (114) are fluidly connected to one or more process gas sources (151) and one or more cleaning gas sources (153). The purge gas inlet(s) (164) are fluidly connected to one or more purge gas sources (162). One or more gas exhaust outlets (116) are fluidically connected to an exhaust pump (157).One or more process gases (P1) supplied using one or more process gas sources (151) may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2). One or more purge gases (P2) supplied using one or more purge gas sources (162) may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2). One or more cleaning gases supplied using one or more cleaning gas sources (153) may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases (P1) include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0020] One or more gas exhaust outlets (116) are additionally connected to or include an exhaust system (109). The exhaust system (109) fluidically connects one or more gas exhaust outlets (116) and an exhaust pump (157). The exhaust system (109) can assist in the controlled deposition of a layer on a substrate (102). The exhaust system (109) is positioned on the side of the processing chamber (100) facing the flow module (112).

[0021] The processing chamber (100) includes one or more liners (111, 163) (e.g., a lower liner (111) and an upper liner (163)). A flow module (112) (which may be at least part of the side wall of the processing chamber (100)) includes one or more gas inlets (114) that are in fluid communication with the processing volume (136). One or more gas inlets (114) are in fluid communication with one or more flow gaps between the upper liner (163) and the lower liner (111).

[0022] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases (P1) flow through one or more gas inlets (114), through one or more gaps, and into a processing volume (136) and flow over a substrate (102).

[0023] The present disclosure also considers that one or more purge gases (P2) may be supplied to and exhausted from a purge volume (138) during a deposition operation (through one or more purge gas inlets (164)). One or more purge gases (P2) flow simultaneously with the flow of one or more process gases (P1). One or more process gases (P1) are exhausted through gaps between an upper liner (163) and a lower liner (111) and through one or more gas exhaust outlets (116). One or more purge gases (P2) may be exhausted through one or more exhaust openings and through one or more gas exhaust outlets (116) identical to those of one or more process gases (P1). The present disclosure considers that one or more purge gases (P2) may be exhausted separately through one or more second gas exhaust outlets that are separate from one or more gas exhaust outlets (116).

[0024] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets (114), through one or more gaps (between the upper liner (163) and the lower liner (111)), and into the processing volume (136).

[0025] The plate (108) includes a plate opening (174). The processing chamber (100) includes a conduit (175) fluidly communicating with the plate opening (174), and one or more energy sources (176, 178) operable to supply plasma (PS1) to the processing volume (136). In one or more embodiments, the one or more energy sources (176, 178) include one or more radio frequency (RF) coils (177) positioned at least partially around the conduit (175), and one or more RF coils (180) positioned at least partially around one or more side walls of the processing chamber (100). The gas (G1) flows through the conduit (175) while power (e.g., RF current) flows through one or more RF coils (177, 180) so that voltage is applied across the gas (G1). The voltage ignites the gas (G1) into plasma (PS1). Subsequently, the plasma (PS1) flows into the processing volume (136). The gas (G1) used to generate the plasma (PS1) may include, but is not limited to, one or more of hydrogen (H2), xenon (Xe2), fluorine (F2), krypton fluoride (KrF), neon (Ne), and / or any mixture thereof (e.g., xenon and neon). In one or more embodiments, the gas (G1) comprises one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetrachlorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one or more embodiments, the gas (G1) comprises one or more dopant gases, such as germane, diborane, and / or phosphorus. Other gases are considered for the gas (G1). The gas (G1) may be supplied from a plasma gas source (179). The present disclosure takes into account that the voltage and / or frequency of the RF power applied to one or more RF coils (177, 180) may be varied and / or pulsed.Frequency can involve a single frequency or multiple frequencies. Multiple frequencies can be combined.

[0026] The processing chamber (100) includes a conductive plate (187) disposed between a substrate support (106) and a plate (108). The conductive plate (187) includes a plurality of flow openings (188), and plasma (PS1) flows through the flow openings (188) and into the processing volume (136). The conductive plate (187) is formed of a conductive material. In one or more embodiments, the conductive material includes silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (e.g., anodized aluminum). The conductive plate (187) can function as an ion filter (e.g., an ion blocker plate), so that when plasma (PS1) flows through the conductive plate (187), radicals flow through the flow openings (188) and through the conductive plate (187), while ions are at least partially blocked by the conductive plate (187) and conducted through the conductive plate to ground through the ground electrode (189). The ground electrode (189) extends into the conductive plate (187) on a side aligned with the exhaust portion (115) of the processing chamber (100). In one or more embodiments, the conductive plate (187) is part of a showerhead that supplies one or more gases to the processing volume (136).

[0027] Plasma (PS1) may be supplied to a processing volume (136) during the flow of one or more process gases (P1) (e.g., deposition gases and / or cleaning gases) to facilitate breaking bonds for, for example, deposition on a substrate (102), cleaning of the substrate (102), and / or cleaning of the inner surfaces of a processing chamber (100). Plasma (PS1) may be supplied to the processing volume (136) before the flow of one or more process gases (P1) (e.g., for pre-cleaning the substrate (102)) or after the flow of one or more process gases (P1) (e.g., for etching the substrate (102), supplying ions into the substrate (102), and / or cleaning the processing chamber (100). The present disclosure takes into account that one or more process gases (P1) may be supplied through a conduit (175) and / or one or more gas inlets (114) may be omitted. The present disclosure also takes into account that the plasma (PS1) may be supplied through one or more gas inlets (114) and / or that the energy source (176) may be omitted or positioned adjacent to the flow module (112).

[0028] The processing chamber (100) includes one or more sensor devices (195, 196, 197, 198) (e.g., measurement sensors and / or temperature sensors) configured to measure parameter(s) (e.g., temperature(s)) within the processing chamber (100) and / or measurement parameter(s) of the substrate (102). In one or more embodiments, the one or more sensor devices (195, 196, 197, 198) include a central sensor device (196) and one or more outer sensor devices (195, 197, 198). A controller (190) (described below) can control one or more sensor devices (195, 196, 197, 198) and can perform method(s) for analyzing the uniformity of substrate processing using at least one of the one or more sensor devices (195, 196, 197, 198). In one or more embodiments, one or more sensor devices (195, 196, 197, 198) each comprise a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, one or more sensor devices (195, 196, 197, 198) each comprise a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, one or more of the sensor devices (195, 196, 197, 198) are pyrometers and / or optical sensors, such as optical pyrometers. The present disclosure takes into account that sensor devices other than pyrometers may be used and / or that one or more of the sensor devices (195, 196, 197, 198) may measure characteristics other than temperature (such as measurement characteristics). For example, one or more of the sensor devices (195, 196, 197, 198) can measure one or more gas parameters and / or one or more plasma parameters (e.g., ion density, electron temperature, electron density, ion energy and angular distribution, enthalpy, radical density, and / or absorption).In one or more embodiments, one or more of the sensor devices (195, 196, 197, 198) include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, a Faraday cup, and / or an absorption spectrometer.

[0029] In one or more embodiments, one or more sensor devices (195, 196, 197, 198) include one or more upper sensor devices (196, 197, 198) disposed on the substrate (102) and adjacent to the cover (154), and one or more lower sensor devices (195) disposed below the substrate (102) and adjacent to the bottom (152). The present disclosure takes into account that at least one of the one or more lower sensor devices (195) may be vertically aligned below at least one of the upper sensor devices (196, 196, 197) (e.g., outer sensor device (197)).

[0030] The present disclosure takes into account that all sensor devices may be placed on or adjacent to the upper plate (108) and / or on the cover (154). For example, one or more lower sensor devices (195) may be omitted. One or more upper sensor devices (196, 197, 198) may be observed through openings defined by the transparent section(s) (172) and / or conduit (175) of the plate (108).

[0031] The individual sensor devices (195, 196, 197, 198) may be single-wavelength sensor devices or multi-wavelength (e.g., dual-wavelength) sensor devices. In one or more embodiments, the processing chamber (100) includes any one, any two, or any three of the four illustrated sensor devices (195, 196, 197, 198). In one or more embodiments, the processing chamber (100) includes one or more additional sensor devices in addition to the sensor devices (195, 196, 197, 198). In one or more embodiments, the processing chamber (100) may include sensor devices positioned at different locations and / or different orientations from the illustrated sensor devices (195, 196, 197, 198).

[0032] As illustrated, the controller (190) communicates with the processing chamber (100) and is used to control the operations of processes and methods, such as the methods described herein. The controller (190) is configured to receive data or input as sensor readings from sensor(s) (such as one or more of sensor devices (195, 196, 197, 198)). The sensor devices may include, for example, sensor devices that monitor the growth of layer(s) on the substrate (102); and / or sensor devices that monitor the temperatures of the substrate (102), the preheating ring (117), the substrate support (106), and / or the liners (111, 163). For example, one or more sensor devices (195, 196, 197, 198) may measure the temperatures of the substrate (102) and / or the preheating ring (117), and power to one or more heat sources (143) and / or energy sources (176) may be controlled based on the measured temperatures (e.g., using feedback control). As described, one or more sensor devices may include, for example, pyrometers. In one or more embodiments, one or more thermocouples (e.g., proximity thermocouples) may be used in addition to or instead of the pyrometers, and power to one or more heat sources (143) and / or energy sources (176) may be controlled based on the measured temperatures (e.g., using feedback control).

[0033] The controller (190) includes a central processing unit (CPU) (193) (e.g., a processor), memory (191) containing instructions, and support circuits (192) for the CPU (193). The controller (190) controls various items directly or through other computers and / or controllers. In one or more embodiments, the controller (190) is communically coupled to dedicated controllers, and the controller (190) functions as a central controller.

[0034] The controller (190) has any form of a general-purpose computer processor used in industrial settings to control various substrate processing chambers and equipment, and sub-processors on or inside them. The memory (191) or non-transient computer-readable medium is one or more of readily available memory, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM) (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. Support circuits (192) of the controller (190) are coupled to the CPU (193) to support the CPU (193). The support circuits (192) include caches, power supplies, clock circuits, input / output circuits, and subsystems, etc. Operation parameters (e.g., power supplied to one or more heat sources (143) and / or energy sources (176), cleaning recipes, and / or processing recipes) and operations are stored in memory (191) as software routines that are executed or called to convert the controller (190) into a specific purpose controller for controlling the operations of the various chambers / modules described herein. The controller (190) is configured to perform any of the operations described herein (e.g., operations of method (500) and / or method (600)). Instructions stored in memory, when executed, cause one or more of the operations described herein (e.g., operations of method (500) and / or method (600)) to be performed in relation to the processing chamber (100). The controller (190) and the processing chamber (100) are at least part of a system for processing substrates.

[0035] The various operations described herein can be performed automatically using a controller (190), or can be performed manually or automatically as specific operations performed by a user.

[0036] The controller (190) is configured to control power, deposition, cleaning, rotational position, heating, and gas flow through the processing chamber (100) for one or more heat sources (143) and / or energy sources (176) by providing outputs to control units for sensor devices (195, 196, 197, 198), one or more heat sources (143) and / or energy sources (176, 178), process gas sources (151), purge gas sources (162), motion assemblies (121), and / or exhaust pumps (157).

[0037] During processing, in one or more embodiments, the substrate (102) is heated to a target temperature of 600 degrees or less, such as 500 degrees or less. In one or more embodiments, the target temperature for the substrate (102) is within the range of 200 degrees to 500 degrees, such as 380 degrees to 500 degrees, such as 400 degrees to 500 degrees. In one or more embodiments, the target temperature for the substrate (102) is less than 500 degrees. In one or more embodiments, the target temperature for the substrate (102) is 400 degrees or less, such as 200 degrees or less (e.g., about 150 degrees).

[0038] One or more heat sources (143) include a plurality of heat sources (143a-143c) disposed below the substrate support (106) and below the lower plate (110). The heat sources (143a-143c) may be arranged in a plurality of levels (181-183) (as shown in FIG. 1) or may be disposed at the same level. One or more reflectors (184, 185, 186) may be disposed inside each of the individual heat sources (143a-143c). The heat sources (143a-143c) may be arranged in a plurality of zones (186-188) (three zones are shown in FIG. 1). The present disclosure takes into account that one or more zones may be used. The heat sources (143a-143c) may be oriented horizontally, vertically, and / or obliquely.

[0039] FIG. 2 is a schematic partial cross-sectional plan view of the conductive plate (187) shown in FIG. 1 according to one or more embodiments.

[0040] A sleeve (201) is placed around the ground electrode (189). The sleeve (201) may be placed on the upper liner (163) and the flow module (112). The conductive plate (187) may be an ion blocking plate, such as an ion filter.

[0041] FIG. 3 is a schematic side cross-sectional view of a processing chamber (300) according to one or more embodiments. The processing chamber (300) is similar to the processing chamber (100) illustrated in FIG. 1 and includes one or more aspects, features, components, operations, and / or characteristics thereof. For the purpose of visual clarity, cross-sectional hatching is not shown in FIG. 3.

[0042] The chamber body of the processing chamber (300) comprises one or more side walls (301), a bottom (302), and a cover (303). The chamber body at least partially defines an internal volume comprising a processing volume (305). A shower head (307) comprising a plurality of openings may be disposed in the internal volume. The shower head (307) (if used) may divide the processing volume (305) into an upper section and a lower section. The present disclosure takes into account that the shower head (307) is optional and may be omitted. One or more first gas inlets (308, 309) (multiple are shown) are at least partially formed in one or more side walls (301). For example, a second gas inlet (310) may be part of a conduit disposed through the cover (303). One or more induction coils (177, 180) are disposed outside the processing volume (305). One or more first coils (177) (e.g., upper coils) are positioned on the cover (303), and one or more second coils (180) (e.g., side coils) are wound at least partially around the processing volume (305).

[0043] A remote plasma source (RPS) (320) is mounted on the cover (303). A first RF source (331) supplies RF power to one or more upper coils (177), a second RF source (332) supplies RF power to one or more side coils (180), and a third RF source (333) supplies RF power to the RPS (320). The RPS (320) includes one or more housings (321) through which a plasma ignition gas (e.g., argon and / or helium) and / or a process gas (e.g., argon, hydrogen, nitrogen, and / or oxygen) is supplied. In one or more embodiments, the plasma ignition gas is ignited into plasma within the RPS (320), and the process gas may flow and interact with the plasma. The plasma may interact with the process gas to form a plasma gas (P3). Therefore, the plasma gas (P3) may contain effluents of the process gas, such as radicals (e.g., argon radicals, hydrogen radicals, oxygen radicals, and / or nitrogen radicals) and / or ions (e.g., argon ions, hydrogen ions, oxygen ions, and / or nitrogen ions).

[0044] The present disclosure also takes into account that the plasma gas (P3) flowing into the processing volume (305) may include the ignited plasma itself. One or more process gases (P1) (which may include a deposition precursor and / or a cleaning precursor) may flow into the processing volume (305) and interact with the plasma gas (P3). A fourth RF source (334) is coupled to the processing chamber (300) through one or more sidewalls (301). In one or more embodiments, the fourth RF source (334) is coupled to supply RF power to the substrate support (106). The RF sources (331-334) may independently supply RF power to the coils (177, 180) and / or other component(s) of the processing chamber (300). In one or more embodiments, the second frequency of the second RF source (332) (e.g., 2.0 MHz to 2.2 MHz, e.g., 2.1 MHz) is greater than the first frequency of the first RF source (331) (e.g., 1.8 MHz to 2.0 MHz, e.g., 1.9 MHz), the fourth frequency of the fourth RF source (334) (e.g., greater than 5.0 MHz, e.g., 13.56 MHz) is greater than the second frequency, and the third frequency of the third RF source (333) (e.g., greater than 1.0 GHz, e.g., 2.45 GHz) is greater than the fourth frequency.

[0045] As described, the first flow (F1) flows through the second gas inlet (310), and the second flow (F2) flows through one or more first gas inlets (308, 309). As illustrated, the first flow (F1) comprises one or more process gases (P1), and the second flow (F2) comprises plasma gases (P3). In addition to or instead of the first gas inlets (308, 309), one or more process gases (P1) may flow through the cover (303) (e.g., through the second gas inlet (310)) as part of the first flow (F1). In one or more embodiments, the first flow (F1) (e.g., plasma gases (P3)) comprises a first flow rate, and the second flow (F2) (e.g., one or more process gases (P1)) comprises a second flow rate greater than the first flow rate. In one or more embodiments, the second flow rate is a certain ratio of the first flow rate, and the ratio is at least 2.0, e.g., at least 3.0. In one or more embodiments, the second flow (F2) comprises a deposition precursor, and the third flow (F3) flows through one or more first gas inlets (308, 309) and / or a second gas inlet (310). In one or more embodiments, the third flow (F3) (e.g., an etchant precursor) has a third flow rate that is less than or equal to the first flow rate of the first flow (F1). The present disclosure takes into account that the ratio of the second flow rate of the second flow (F2) to the first flow rate of the first flow (F1) may be within the range of 0.001 to 1,000.0. The present disclosure takes into account that the ratio of the second flow rate of the second flow (F2) to the third flow rate of the third flow (F3) may be within the range of 0.001 to 1,000.0.

[0046] Gases (P1, P3) can be exhausted through the bottom (302) using a valve (318) (e.g., a throttle valve) and a pump (319) (e.g., a vacuum pump and / or a turbo pump). A blocking plate (330) having a plurality of openings is disposed between the substrate support (106) and the bottom (302). Gases (P1, P3) can flow through the openings of the blocking plate (330) before being exhausted through the valve (318) and the pump (319). The processing chamber (300) can be used as an epitaxial deposition chamber, an atomic layer deposition (ALD) chamber, a plasma-enhanced chemical vapor deposition (PECVD) chamber, an etching chamber, a dielectric deposition chamber, or any other chamber, such as any other plasma-capable deposition chamber.

[0047] FIG. 4a is a schematic diagram of a semiconductor layer (420) during a passivation operation according to one or more embodiments. The exposed surface of the semiconductor layer (420) of the substrate (102) undergoes hydrogen passivation, leaving hydrogen atoms (430) on the surface of the semiconductor layer (420). Although FIG. 4a illustrates the semiconductor layer (420) as silicon atoms (422) arranged in a crystalline array, other semiconductors may be used. Since hydrogen passivation may not be completely finished, some dangling bonds (432) may still exist.

[0048] FIG. 4b is a schematic diagram of a semiconductor layer (420) during a plasma-enhanced deposition operation according to one or more embodiments. As ions (440) generated by the plasma impact the substrate, breaking the bonds between hydrogen and the underlying semiconductor, hydrogen can be desorbed (shown in A). Impact on the substrate by energetic ions also enhances the surface mobility of adatoms, which enables epitaxial growth to be performed at low temperatures. Furthermore, neutral radicals (442) generated by the plasma can dissociate the semiconductor precursor (444) (shown in B) to produce radical precursors (446) despite the low temperature. For example, silane (SiH4) can form SiHx. These semiconductor-containing radical precursors migrate to growth sites on the surface, e.g., locations having free dangling bonds (432), and semiconductor atoms (424) (e.g., silicon) combine with atoms (422) of the semiconductor material in the layer (420) to cause the growth of the semiconductor layer (shown in C). The reaction between the precursor or radical precursor and the semiconductor may cause additional hydrogen desorption (shown in D). Furthermore, some ions (440), e.g., H + It can penetrate the surface of the semiconductor layer and cause annealing and crystallization (as shown in E). Under appropriate processing conditions, this can lead to the growth of a single-crystalline layer on the substrate (102).

[0049] FIG. 5 is a schematic block diagram of a method (500) for substrate processing for semiconductor manufacturing according to one or more embodiments.

[0050] The operation (502) of the method (500) comprises heating a substrate positioned on a substrate support of a processing chamber from one side of the substrate. Heating may be performed using, for example, laser sources, radiation sources (e.g., lamps), resistive heaters, and / or other heat sources. The present disclosure takes into account that any heat source may be used. Heating may be performed using, for example, infrared radiation, ultraviolet radiation, microwave radiation, or any other energy. Heating comprises heating the substrate to a target temperature. In one or more embodiments, the target temperature is less than 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or less. Other temperatures, such as temperatures within the range of 150 degrees Celsius to 1,600 degrees Celsius, are considered.

[0051] Operation (503) comprises supplying a plasma product to a processing volume of a processing chamber. The plasma product may be generated in the processing volume (e.g., in-situ) and / or generated outside the processing volume (e.g., as part of a remote plasma source (RPS)) and then flowed into the processing volume. The plasma product may include ignited plasma and / or plasma effluent(s) (e.g., ions and / or radicals). For example, plasma may be generated and may interact with the substrate and / or process gases processing the substrate. As another example, a first gas (e.g., argon and / or helium) may be ignited into the plasma, and then a second gas (e.g., oxygen, hydrogen, and / or nitrogen) may interact with the plasma to generate plasma effluent(s). The plasma effluent(s) may interact with the substrate and / or process gases processing the substrate.

[0052] Operation (504) includes maintaining the processing volume at a constant pressure. In one or more embodiments, the pressure is maintained to be less than 60 Torr, for example, within the range of 0 Torr to 30 Torr. In one or more embodiments, the pressure is maintained to be less than 1 Torr, for example, within the range of 5 mTorr to 50 mTorr, for example, within the range of 0 Torr to 5 mTorr, or within the range of 5 mTorr to 20 mTorr. In one or more embodiments, the pressure is maintained to be 100 mTorr or less. For example, 1 mTorr to 760 Torr (e.g., atmospheric pressure) or other pressures higher than that are considered.

[0053] Operation (505) comprises flowing one or more process gases over a substrate. In one or more embodiments, the plasma product of operation (503) is supplied during the flow of one or more process gases of operation (505), and the plasma product interacts with one or more process gases and / or the plasma product flows over the substrate. In one or more embodiments, the plasma product of operation (503) is supplied before or after the flow of one or more process gases of operation (505). The process gases may flow laterally across the substrate. The process gases may deposit layer(s) on the substrate, pre-clean the substrate, post-clean the substrate, etch the substrate, and / or clean the components of the process chamber.

[0054] Operation (506) comprises depositing one or more layers on a substrate. In one or more embodiments, the plasma product of operation (503) is supplied during the deposition of operation (506). In one or more embodiments, the plasma product of operation (503) is supplied before or after the deposition of operation (506). The deposition may involve forming layers containing silicon and / or germanium, for example, on exposed silicon surfaces of the substrate. The layers may contain one or more dopants (e.g., boron). The deposition of operation (506) may be replaced by substrate cleaning, chamber cleaning, and / or substrate etching. The deposition of operation (506) may be used in addition to substrate cleaning, chamber cleaning, and / or substrate etching.

[0055] FIG. 6 is a schematic block diagram of a method (600) for processing a substrate for semiconductor manufacturing according to one or more embodiments. In one or more embodiments, the method (600) includes plasma-enhanced epitaxial deposition for depositing a layer on a substrate.

[0056] Operation (602) includes pre-cleaning the substrate. The semiconductor substrate may initially have an oxide layer formed on the surface of the substrate, such as a natural oxide layer. The substrate may also have residues from previous manufacturing processes, such as photoresist. The substrate may undergo pre-cleaning to remove oxides and other contaminants. For example, the substrate may undergo a remote plasma-assisted dry etching process, such as dry etching using NF3 and NH3, such as Siconi™ etching. Following this plasma etching, an annealing operation may follow, for example, at 80–150°C. Alternatively, or in addition thereto, the substrate may undergo wet etching using diluted HF (e.g., 1:100 for 0.5–5 minutes).

[0057] Operation (604) includes passivating the substrate.

[0058] An optional operation (612) includes raising the target temperature of the substrate by heating the substrate. In one or more embodiments, the target temperature is raised to be within the range of 200 degrees Celsius to 600 degrees Celsius. For example, one or more heating elements (243) in the substrate support (106) (e.g., pedestal) may be set to a temperature within the range of 350 to 450 ℃.

[0059] In one or more embodiments, the substrate is maintained at ambient room temperature.

[0060] Optional operation (614) includes flowing a carrier gas into a processing chamber. The carrier gas may include, for example, Ar, H2, N2, He, or a mixture thereof. The flow rate of the carrier gas may be 0.5 to 1000 sccm, and the pressure of the processing volume is maintained at 1 mTorr to 500 mTorr, for example, by throttle valve-controlled pumping. In one or more embodiments, the carrier gas includes argon and flows at a flow rate of 50 sccm to 200 sccm.

[0061] Operation (616) involves igniting the plasma. The plasma is ignited and maintained, for example, at a power of 100 to 5,000 watts. For example, the plasma may be maintained throughout the operations (618 and / or 620). The plasma may be inductively coupled plasma, capacitively coupled plasma, or a combination of inductive and capacitive coupling may be used. The plasma may be generated by a remote plasma source and may have effluents (e.g., radicals and / or ions). The plasma may be any type of plasma and / or may be generated in any way. For example, the plasma may be generated using radio frequency energy, direct current energy, and / or microwave energy. As another example, the plasma may be generated using constant electric fields, alternating electric fields, and / or electromagnetic fields. The plasma may be generated in situ and / or at a remote plasma source (RPS).

[0062] Ignition of the plasma includes applying a first power to one or more top coils (177) (Figs. 1 and 3). The first RF power is in the range of 100 W to 5,000 W. In one or more embodiments, the first power is 400 to 2,400 W (e.g., 400 to 1,200 W). Ignition of the plasma includes applying a second power to one or more side coils (180) (Figs. 1 and 3). The second power is greater than the first power. The second RF power is a certain ratio of the first RF power, and the ratio is at least 1.75, e.g., about 2.0 or higher. In one or more embodiments, the second power is about twice the power of the top coil, e.g., 800 to 4,800 W (e.g., 800 to 2,400 W).

[0063] Operation (618) comprises flowing a process gas (e.g., a deposition precursor, e.g., a semiconductor precursor) into a processing chamber. In one or more embodiments, the process gas comprises a cleaning precursor. In one or more embodiments, in operation (618), one or more semiconductor precursors, e.g., silicon precursors, may be introduced into the processing chamber. Examples of precursors are SiH4, Si2H6, SiH2Cl2, and Si4H 10 It includes Si3H8, SiHCl3, SiCl4, or a mixture of two or more of these. The flow rate of the process gas may be 0.5 sccm to 50 sccm, e.g., 5 to 10 sccm. In one or more embodiments, the process gas includes silicon (e.g., Si2H6) and flows at a total flow rate of 5 sccm to 10 sccm. In one or more embodiments, the process gas includes a deposition precursor (e.g., DCS) and an etching precursor (e.g., HCl).

[0064] Optional operation (620) includes flowing a dopant precursor into a processing chamber. The flow rate of the dopant precursor gas may be from 0.5 sccm to 100 sccm. Examples of dopant precursor gases are phosphine (PH3), arsine (AsH3), nitrogen (N2), ammonia (NH3), germane (GeH4), boran (BH3), diborane (B2H6), and disilabutane (C2H 10 Si2), trisilapentane or trimethylgallium (Ga(CH3)3), triethylgallium (Ga(C2H5)3), aluminum chloride (AlCl3), triethylaluminum (C6H 15 Al), trimethylaluminum (C6H 18Al2), methylsilane (CH3SiH3), indium chloride (InCl3), gallium trichloride (GaCl3), sodium oxalate (Na2C2O4), trimethylindium ((CH3)3In), phosphorus trichloride (PCl3), lithium triethylborohydride LiBH((C2H5)3), tris(trimethylsilyl)-arsine (As(TMS)3), tertiary butylarsine (TBAs), dibutyl sebacate (DBS), dioctylamine (DOA), myristic acid (MA), methyl myristate (MM), tri(di-tert-butylphosphino)galan (Ga(PtBu2)3), hexadecylamine (HAD), indium acetate (In(Ac)3), oleic acid (OA), 1-octadecene (ODE), 1-octylamine (OTA), palmitic acid (PA), It includes tris(trimethylsilyl)-phosphine (P(TMS)3), trioctylamine (TOA), trioctylphosphine (TOP), trioctylphosphine oxide (TOPO), bisazidodimethylaminopropyl gallium (BAZIGA), trimethylgallium (TMGa), trimethylaluminum (TMAl), and triethylantimony (TESb), or a combination of two or more of these.

[0065] The present disclosure takes into account that a dopant may be omitted and the process may grow single-crystal silicon. The use of a dopant may grow single-crystal SiP, SiGe, SiBGe, SiC, SiGeC, or SiB. The process may be applicable to other semiconductors, such as InP, InAs, InSb, GaP, GaInP, GaAs, and GaN, and / or their doped forms. The method (600) may be used for plasma-enhanced epitaxial deposition to grow single-crystal silicon having a refractive index of 6–7, which can exhibit growth rates greater than 10 nm / min (e.g., 20–25 nm / min) and low defect levels.

[0066] The present disclosure takes into account that the operations of the methods (500, 600) may be performed sequentially, or that at least some of the operations may be performed at least partially simultaneously. For example, operations (502, 504) and operations (618, 620) may be performed simultaneously.

[0067] The present disclosure takes into account that one or more operations of method (500) may be combined with one or more operations of method (600) as part of a combined method. For example, the combined method may include performing operations (602 and 604), followed by operation (502) (which may include operation (612)), followed by operations (614 and 503) (which may include operation (616)), followed by operations (504-506) (which may include operations (618)), followed by operation (620).

[0068] Method (500) and / or method (600) may be performed using the processing chamber (100) and / or processing chamber (300) described herein. The present disclosure takes into account that Method (500) and / or Method (600) may include one or more of the following Examples 1 through 9.

[0069] Example 1. In one or more embodiments providing beneficial growth rate and refractive index, the substrate was 400°C, the top coil was powered at 1000 W and the side coil at 2000 W, the chamber had a pressure of 10 mTorr, the flow rate of the Si2H6 precursor from the top was 2 sccm and the flow rate of the Si2H6 precursor from the side was 6 sccm, and an argon carrier was injected.

[0070] Example 2. In one or more embodiments providing beneficial growth rate and refractive index, the substrate was 400°C, the top coil was powered at 500 W, the side coil was powered at 1000 W, the chamber had a pressure of 10 mTorr, the flow rate of the Si2H6 precursor from the top was 3 sccm, the flow rate of the Si2H6 precursor from the side was 7 sccm, and an argon carrier was injected.

[0071] Example 3. In one or more embodiments providing beneficial growth rate and refractive index, the substrate was 400°C, the top coil was powered at 600 W, the side coil was powered at 1200 W, the chamber had a pressure of 10 mTorr, the flow rate of the Si2H6 precursor from the top was 3 sccm, the flow rate of the SiH4 precursor from the side was 7 sccm, and a hydrogen carrier was injected.

[0072] Examples 4 and 5. In one or more examples that provided beneficial growth rates and refractive indices, the treatment conditions were the same as in Example 3, but HCl was added at 1 sccm or 3 sccm. This resulted in a slightly higher refractive index and reduced or eliminated the loss in growth rate.

[0073] Example 6. In one or more embodiments providing beneficial growth rate and refractive index, the substrate was 400°C, the top coil was powered at 600 W, the side coil was powered at 1200 W, the chamber had a pressure of 10 mTorr, the flow rate of the DCS precursor from the top was 3 sccm, the flow rate of the DCS precursor from the side was 7 sccm, and a hydrogen carrier was injected.

[0074] Examples 7, 8, and 9. In one or more examples that provided beneficial growth rates and refractive indices, the treatment conditions were the same as in Example 6, and HCl was added at 1 sccm, 3 sccm, or 5 sccm, respectively. Higher HCl flow rates resulted in a decrease in growth rate (though still greater than 10 nm / min). However, bright-field scanning tunneling electron microscopy images showed a lower defect density than with no HCl or with 3 sccm of HCl.

[0075] The advantages of the present disclosure include reliable gas activation and processing (e.g., at relatively low processing temperatures); adjustable gas activation; windows of extended selectivity; modularity using plasma operations and epitaxial deposition operations in a single chamber; modularity in chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in the outer region of the substrate); reduced gas consumption and gas waste; increased growth rates (e.g., at low temperatures and / or low pressures); and improved and more uniform film growth and / or dopant concentration with reduced microloading. For example, ions and / or radicals may be used to activate gases for processing in addition to or instead of electromagnetic radiation (e.g., infrared radiation and / or ultraviolet radiation). The advantages further include plasma-enhanced epitaxy having reduced or eliminated substrate defects, higher growth rates (e.g., > 100 Å / min) at low substrate temperatures (e.g., ≤ 500 ℃), and / or lower process pressures (e.g., ≤ 100 mT).

[0076] Advantages also include improved device performance; improved hydrogen desorption; reduction or elimination of unintended dopant diffusion occurrences; efficient processing; and increased throughput. For example, gas activation is facilitated for substrate target temperatures below 500°C, such as target temperatures within the range of 380°C to 500°C. For example, when the substrate is at about 400°C, gas can be activated for processing operations. Semiconductor layers including doped semiconductor layers can be epitaxially grown at low substrate temperatures, such as ≤ 400°C, and at low pressures, such as ≤ 100 mT process chamber pressure. Furthermore, the layers can be grown without sacrificing growth rate, or even at a growth rate higher than that of traditional thermal epitaxy, such as ≥ 100 Å / min. The technique can be applied to, for example, Si, SiP, SiGe, SiBGe, SiC, SiGeC, and / or SiB epitaxy.

[0077] One or more aspects disclosed herein are considered to be combinable. For example, one or more aspects, features, components, operations, and / or characteristics of a processing chamber (100); a conductive plate (187); a controller (190); a conduit (175); an energy source (176); one or more coils (177, 180); a processing chamber (300); the process of FIG. 4a; the process of FIG. 4b; a method (500); and / or a method (600) may be combined. Furthermore, one or more aspects disclosed herein are considered to include some or all of the aforementioned advantages.

[0078] Although the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the subsequent claims.

Claims

Claim 1 A method for processing a substrate, comprising the steps of: igniting a plasma; flowing a deposition precursor to interact with the plasma; flowing the deposition precursor over the substrate to form a layer on the substrate located in a processing volume; maintaining the process volume at a pressure of less than 100 mTorr; and heating the substrate to a target temperature of 500 degrees or less. Claim 2 A method according to claim 1, wherein the layer comprises a single-crystalline material. Claim 3 A method according to claim 1, wherein the step of igniting the plasma comprises applying radio frequency (RF) power to one or more sources disposed outside the processing volume. Claim 4 In paragraph 3, the one or more sources comprise one or more first coils and one or more second coils, a first RF power is applied to the one or more first coils, a second RF power is applied to the one or more second coils, and the second RF power is greater than the first RF power, a method. Claim 5 A method according to paragraph 4, wherein the second RF power is a ratio of the first RF power, and the ratio is at least 1.

75. Claim 6 In paragraph 4, the method wherein the first RF power is within the range of 100 W to 5,000 W. Claim 7 A method according to claim 1, wherein the pressure is within the range of 5 mTorr to 50 mTorr. Claim 8 In claim 1, the method wherein the target temperature is ambient room temperature. Claim 9 A method according to claim 1, wherein the pressure is within the range of 5 mTorr to 20 mTorr and the total flow rate of the deposition precursor is within the range of 5 sccm to 10 sccm. Claim 10 A method according to claim 1, further comprising the step of cleaning the exposed surface of the substrate to remove oxide prior to the flow of the deposition precursor. Claim 11 A method for processing a substrate comprises: a step of igniting a plasma; a step of flowing a deposition precursor to interact with said plasma; and a step of flowing a deposition precursor over said substrate to form a layer on said substrate located in a process volume, wherein the flowing of said deposition precursor is A first flow through the cover of the processing chamber, and A method comprising a second flow through the side wall of the processing chamber. Claim 12 A method according to claim 11, wherein the first flow comprises a first flow rate, and the second flow comprises a second flow rate greater than the first flow rate. Claim 13 A method according to claim 12, wherein the second flow rate is a ratio of the first flow rate, and the ratio is at least 2.

0. Claim 14 A method according to claim 12, further comprising the step of flowing an etchant precursor into the process volume, wherein the etchant precursor has a third flow rate that is less than or equal to the first flow rate. Claim 15 A method according to claim 11, further comprising the step of heating the substrate to a target temperature of 500 degrees or less. Claim 16 A processing chamber comprising: a chamber body that at least partially defines a processing volume; a first gas inlet formed in a side wall of the chamber body; a second gas inlet formed in a cover of the chamber body; a substrate support disposed in the processing volume; and one or more induction coils disposed outside the processing volume. Claim 17 In Clause 16, the above one or more induction coils are, One or more upper coils positioned on the above cover; and A processing chamber comprising at least one side coil partially wound around the processing volume. Claim 18 In claim 17, a processing chamber further comprising a remote plasma source mounted on the cover of the processing chamber. Claim 19 In paragraph 18, the controller further comprises instructions, said instructions, when executed, Applying a first RF power to one or more upper coils; and A processing chamber that causes applying a second RF power to one or more side coils—wherein the second RF power is greater than the first RF power. Claim 20 In paragraph 19, the processing chamber, wherein the second RF power is a ratio of the first RF power, and the ratio is at least 1.75.

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