Power module, method for manufacturing same, electronic device, and power conversion device

Abstract

A power module (1) is provided with an insulating circuit board (10), a sealing member (17), and a heat dissipation member (20). The insulating circuit board (10) includes an insulating layer (11), a circuit pattern layer (12), and a conductive pattern layer (13). The sealing member (17) includes a first sealing portion (18) and a second sealing portion (19). The heat dissipation member (20) is connected to the conductive pattern layer (13) and protrudes from the first sealing portion (18). In a plan view of a main surface (11a) of the insulating layer (11), the outer peripheral edge of the heat dissipation member (20) is inside the outer peripheral edge of the first sealing portion (18). At least a part of a side surface (20a) of the heat dissipation member (20) is covered with the second sealing portion (19). The first sealing portion (18) is a resin bulk. The second sealing portion (19) is a resin film. The second sealing portion (19) is thinner than the first sealing portion (18).

Description

Power module and its manufacturing method, electronic device, and power conversion device

[0001] The present disclosure relates to a power module and a manufacturing method thereof, an electronic device, and a power conversion device.

[0002] Japanese Patent Publication No. 5202333 (Patent Document 1) discloses a heat dissipation substrate including a ceramic substrate, a metal layer, and a heat dissipation member. The metal layer is provided on the ceramic substrate. The heat dissipation member has a first surface and a second surface opposite to the first surface. The first surface is in contact with the metal layer. The area of ​​the first surface is smaller than the area of ​​the second surface.

[0003] Patent No. 5202333

[0004] In the heat dissipation substrate described in Patent Document 1, the heat dissipation member needs to be processed into a special shape in order to make the area of ​​the first surface of the heat dissipation member smaller than the area of ​​the second surface. This increases the cost of the heat dissipation member. The present disclosure has been made in consideration of the above-mentioned problems, and its purpose is to provide a power module, an electronic device, and a power conversion device that have improved reliability and can reduce the cost of a cooler attached to the power module.

[0005] A power module according to a first aspect of the present disclosure includes an insulating circuit board, a power semiconductor element, a sealing member, and a heat dissipation member. The insulating circuit board includes an insulating layer, a circuit pattern layer, and a conductive pattern layer. The insulating layer has a first main surface and a second main surface opposite the first main surface. The circuit pattern layer is disposed on the first main surface. The conductive pattern layer is disposed on the second main surface. The power semiconductor element is bonded to the circuit pattern layer. The sealing member includes a first sealing portion that seals the power semiconductor element and at least a portion of the insulating circuit board, and a second sealing portion that protrudes from the first sealing portion. The heat dissipation member is connected to the conductive pattern layer and protrudes from the first sealing portion in the stacking direction of the insulating layer and the conductive pattern layer. In a plan view of the first main surface, the outer periphery of the heat dissipation member is located inside the outer periphery of the first sealing portion. The heat dissipation member has a side surface that extends in the stacking direction. At least a portion of the side surface of the heat dissipation member is covered by the second sealing portion. The first sealing portion is a resin bulk, and the second sealing portion is a resin film, which is thinner than the first sealing portion.

[0006] A power module according to a second aspect of the present disclosure includes an insulating circuit board, a power semiconductor element, a sealing member, and a heat dissipation member. The insulating circuit board includes an insulating layer, a circuit pattern layer, and a conductive pattern layer. The insulating layer has a first main surface and a second main surface opposite the first main surface. The circuit pattern layer is disposed on the first main surface. The conductive pattern layer is disposed on the second main surface. The power semiconductor element is bonded to the circuit pattern layer. The sealing member seals the power semiconductor element and at least a portion of the insulating circuit board. The heat dissipation member is connected to the conductive pattern layer and protrudes from the sealing member in the stacking direction of the insulating layer and the conductive pattern layer. In a plan view of the first main surface, the outer periphery of the heat dissipation member is inside the outer periphery of the sealing member. The heat dissipation member has a side surface extending in the stacking direction. At least a portion of the side surface of the heat dissipation member is exposed from the sealing member.

[0007] The method for manufacturing a power module of the present disclosure includes connecting a heat dissipation member to an insulating circuit board. The insulating circuit board includes an insulating layer, a circuit pattern layer, and a conductive pattern layer. The insulating layer has a first main surface and a second main surface opposite the first main surface. The circuit pattern layer is disposed on the first main surface. The conductive pattern layer is disposed on the second main surface. The heat dissipation member is connected to the conductive pattern layer. The method for manufacturing a power module of the present disclosure includes sealing at least a portion of the insulating circuit board with a sealing member by molding using a mold. The sealing member includes a first sealing portion that seals the insulating circuit board and a second sealing portion that protrudes from the first sealing portion. The heat dissipation member protrudes from the first sealing portion in the stacking direction of the insulating layer and the conductive pattern layer. In a plan view of the first main surface, the outer periphery of the heat dissipation member is inside the outer periphery of the first sealing portion. At least a portion of a side surface of the heat dissipation member extending in the stacking direction is covered with the second sealing portion. The first sealing portion is a resin bulk. The second sealing portion is a resin film and is thinner than the first sealing portion.

[0008] The electronic device of the present disclosure includes the power module of the present disclosure, a bonding member, and a cooler attached to the heat dissipation member via the bonding member, wherein, in a plan view of the first main surface, the outer periphery of the heat dissipation member is located inside the outer periphery of the cooler.

[0009] The power conversion device of the present disclosure includes a power module of the present disclosure, a main conversion circuit that converts input power and outputs it, and a control circuit that outputs a control signal to the main conversion circuit to control the main conversion circuit.

[0010] According to the present disclosure, the power module, the electronic device, and the power conversion device have improved reliability, and the cost of the cooler attached to the power module can be reduced.

[0011] 9 is a schematic plan view of a power module and an electronic device according to a first embodiment. FIG. 1 is a schematic cross-sectional view of the power module and the electronic device according to the first embodiment, taken along the cross-sectional line II-II shown in FIG. 1 . FIG. 2 is a diagram showing a flowchart of an example of a manufacturing method of the power module and the electronic device according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing one step of a manufacturing method of the power module and the electronic device according to the first embodiment. FIG. 4 is a schematic cross-sectional view of a power module and an electronic device according to a comparative example. FIG. 5 is a schematic partially enlarged cross-sectional view of a power module and an electronic device according to a comparative example during operation. FIG. 6 is a schematic partially enlarged cross-sectional view of the power module and the electronic device according to the first embodiment during operation. FIG. 7 is a schematic cross-sectional view of a power module and an electronic device according to a modified example of the first embodiment. FIG. 8 is a schematic plan view of a power module and an electronic device according to a second embodiment. FIG. 9 is a schematic cross-sectional view of a power module and an electronic device according to the second embodiment, taken along the cross-sectional line X-X shown in FIG. 9 . FIG. 10 is a diagram showing a flowchart of a first example of a manufacturing method of the power module and the electronic device according to the second embodiment. FIG. 11 is a diagram showing a flowchart of a second example of a manufacturing method of the power module and the electronic device according to the second embodiment. FIG. 12 is a schematic cross-sectional view showing one step of the second example of a manufacturing method of the power module and the electronic device according to the second embodiment. 15 is a schematic cross-sectional view of a power module and an electronic device according to a third embodiment. FIG. 16 is a schematic plan view of a power module and an electronic device according to a fourth embodiment. FIG. 17 is a schematic cross-sectional view of a power module and an electronic device according to a fourth embodiment. FIG. 18 is a schematic cross-sectional view of a power module and an electronic device according to a fifth embodiment. FIG. 19 is a schematic cross-sectional view of a power module and an electronic device according to a sixth embodiment. FIG. 20 is a block diagram showing the configuration of a power conversion system according to a seventh embodiment.

[0012] Hereinafter, embodiments of the present disclosure will be described. Note that the same reference numerals are used to designate the same components, and the description thereof will not be repeated.

[0013] 1 and 2, a power module 1 according to a first embodiment will be described. The power module 1 mainly includes an insulating circuit board 10, a power semiconductor element 15, a sealing member 17, and a heat dissipation member 20.

[0014] The insulating circuit board 10 includes an insulating layer 11 , a circuit pattern layer 12 , and a conductive pattern layer 13 .

[0015] The insulating layer 11 has a main surface 11a, a main surface 11b opposite to the main surface 11a, and a side surface 11c. The side surface 11c is connected to the main surface 11a and the main surface 11b. The side surface 11c extends in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The insulating layer 11 is, for example, a ceramic substrate. The insulating layer 11 is, for example, made of alumina (Al ２ O ３ ), aluminum nitride (AlN) or silicon nitride (Si ３ N ４ ) are made of ceramics such as

[0016] The circuit pattern layer 12 is disposed on the principal surface 11a and bonded to the principal surface 11a. The conductive pattern layer 13 is disposed on the principal surface 11b and bonded to the principal surface 11b. The conductive pattern layer 13 includes a side surface 13a and a surface 13b connected to the side surface 13a. The side surface 13a extends in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The surface 13b is the surface of the conductive pattern layer 13 opposite the insulating layer 11. The conductive pattern layer 13 includes a corner 14 that contacts the insulating layer 11. The corner 14 is the end of the side surface 13a that is closest to the insulating layer 11. The circuit pattern layer 12 and the conductive pattern layer 13 are formed of a metal such as copper (Cu) or aluminum (Al). The insulating circuit board 10 is, for example, a DBC (Direct Bonded Copper) substrate in which a copper layer is bonded to a ceramic substrate.

[0017] The power semiconductor element 15 is, for example, a switching element such as an insulated gate bipolar transistor (IGBT) or a metal oxide semiconductor field effect transistor (MOSFET), or a diode such as a free wheel diode. The power semiconductor element 15 is primarily formed of a semiconductor material such as silicon (Si) or silicon carbide (SiC). The power semiconductor element 15 is bonded to the circuit pattern layer 12 using a conductive bonding member 16. The conductive bonding member 16 is, for example, solder or a sintered bonding member (e.g., a metal fine particle sintered body such as a silver nanoparticle sintered body). A metal wire (not shown) such as an aluminum wire, copper wire, or gold wire, or a metal lead frame (not shown), is connected to the power semiconductor element 15.

[0018] The sealing member 17 is made of insulating resin. The sealing member 17 is made of a thermosetting resin such as epoxy resin. The flexural modulus of the sealing member 17 is, for example, 10 GPa or more. The sealing member 17 includes a first sealing portion 18 and a second sealing portion 19.

[0019] The first sealing portion 18 seals the power semiconductor element 15 and at least a portion of the insulating circuit board 10. For example, the first sealing portion 18 covers the power semiconductor element 15, the circuit pattern layer 12, the insulating layer 11, and the side surface 13a of the conductive pattern layer 13. The first sealing portion 18 is, for example, a resin bulk. The first sealing portion 18 has a side surface 18a facing the side surface 11c of the insulating layer 11 and a bottom surface 18b connected to the side surface 18a. The side surface 18a extends, for example, in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The bottom surface 18b is a surface of the first sealing portion 18 that is close to the heat dissipation member 20. The bottom surface 18b may be flush with the surface 13b of the conductive pattern layer 13.

[0020] The second sealing portion 19 protrudes from the first sealing portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The second sealing portion 19 is thinner than the first sealing portion 18. The second sealing portion 19 has a thickness t ２The second sealing portion 19 is a resin film formed, for example, when the sealing member 17 is formed by molding using a mold, by allowing resin to flow into a gap between a side surface of a mold 30 (see FIG. 4 ) and a side surface 20 a of the heat dissipation member 20 and harden. The second sealing portion 19 has a side surface 19 a. The side surface 19 a extends, for example, in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The side surface 19 a extends along the side surface 20 a of the heat dissipation member 20. The side surface 19 a is connected to the bottom surface 18 b of the first sealing portion 18. The side surface 19 a is not connected to the side surface 18 a of the first sealing portion 18 and is discontinuous with the side surface 18 a of the first sealing portion 18.

[0021] The heat dissipation member 20 transfers heat from the power semiconductor elements 15 to the cooler 25. The heat dissipation member 20 is connected to the conductive pattern layer 13. Specifically, the heat dissipation member 20 is joined to the surface 13b of the conductive pattern layer 13 using a joining member (not shown) such as solder. The heat dissipation member 20 is formed of a metal such as copper (Cu) or aluminum (Al). The heat dissipation member 20 may be formed of a material different from that of the conductive pattern layer 13, or may be formed of the same material as that of the conductive pattern layer 13. For example, the thermal conductivity of the heat dissipation member 20 may be greater than that of the cooler 25, such as when the heat dissipation member 20 is formed of copper and the cooler 25 is formed of aluminum. Therefore, the heat dissipation member 20 can spread heat from the power semiconductor elements 15 in a direction along the main surface 11a and then transfer the heat to the cooler 25.

[0022] The heat dissipation member 20 protrudes from the first sealing portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The protruding height h of the heat dissipation member 20 from the first sealing portion 18 is the sum of the thickness t of the bonding member 24 and the thickness h of the bonding member 24. １ The protruding height h of the heat dissipation member 20 from the first sealing portion 18 is, for example, 1 mm or more. In this embodiment, the protruding height h of the heat dissipation member 20 is the thickness of the heat dissipation member 20.

[0023] In a plan view of the main surface 11a, the heat dissipation member 20 is smaller in size than the first sealing portion 18. Specifically, as shown in FIG. 1, in a plan view of the main surface 11a, the outer peripheral edge of the heat dissipation member 20 is located inside the outer peripheral edge of the first sealing portion 18. Therefore, as shown in FIG. 2, a space can be provided on the side of the heat dissipation member 20 relative to the first sealing portion 18. In a plan view of the main surface 11a, the heat dissipation member 20 is smaller in size than the cooler 25. Specifically, as shown in FIG. 1, in a plan view of the main surface 11a, the outer peripheral edge of the heat dissipation member 20 is located inside the outer peripheral edge of the cooler 25. Therefore, as shown in FIG. 2, a space can be provided between the first sealing portion 18 and the cooler 25.

[0024] The heat dissipation member 20 has a side surface 20a and a cooler bonding surface 21. The side surface 20a extends in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The side surface 20a may be flush with the side surface 13a of the conductive pattern layer 13. At least a portion of the side surface 20a is covered with a second sealing portion 19. A peripheral edge 22 of a bonding portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is covered with a sealing member 17 (second sealing portion 19). The entire side surface 20a may be covered with the second sealing portion 19. At least a portion of the side surface 20a may be exposed from the second sealing portion 19.

[0025] The cooler bonding surface 21 is the bonding surface of the heat dissipation member 20 to which the cooler 25 is bonded, and is the surface on which the bonding member 24 is provided. The cooler bonding surface 21 is connected to the side surface 20a. The cooler bonding surface 21 is the surface of the heat dissipation member 20 on the opposite side to the insulating circuit board 10 side. The cooler bonding surface 21 is exposed from the sealing member 17.

[0026] The electronic device 2 of this embodiment includes the power module 1 , a joining member 24 , and a cooler 25 .

[0027] The joining member 24 is disposed between the heat dissipation member 20 and the cooler 25, and joins the heat dissipation member 20 and the cooler 25 to each other. The joining member 24 is, for example, solder or a metal fine particle sintered body.

[0028] The cooler 25 is, for example, a heat sink. The cooler 25 is made of a metal such as aluminum (Al) or copper (Cu), or an alloy such as an aluminum alloy. The cooler 25 dissipates heat from the power module 1 to the outside of the electronic device 2. The power module 1 is attached to the cooler 25 via a joining member 24. The cooler 25 is spaced apart from the first sealed portion 18. A space exists between the cooler 25 and the first sealed portion 18.

[0029] An example of a method for manufacturing the power module 1 and the electronic device 2 of this embodiment will be described with reference to FIG.

[0030] The heat dissipation member 20 is connected to the insulating circuit board 10 (step S1). For example, the heat dissipation member 20 is connected to the conductive pattern layer 13 using a joining member (not shown) such as solder.

[0031] The power semiconductor element 15 is bonded to the insulating circuit board 10 (step S2). For example, the power semiconductor element 15 is bonded to the circuit pattern layer 12 using a conductive bonding member 16 such as solder or a sintered bonding member (e.g., a metal fine particle sintered body such as a silver nanoparticle sintered body). A metal wire (not shown) such as an aluminum wire, copper wire, or gold wire, or a metal lead frame (not shown), is connected to the power semiconductor element 15.

[0032] The power semiconductor elements 15 and at least a portion of the insulating circuit board 10 are sealed with a sealing member 17 (step S3). The sealing member 17 is formed, for example, by molding using a mold 30 (see FIG. 4). In this manner, the power module 1 is formed.

[0033] Specifically, referring to FIG. 4 , a laminate of the insulating circuit board 10, the power semiconductor element 15, and the heat dissipation member 20 is placed in a cavity of a mold 30. The mold 30 includes a first mold 31 and a second mold 32. The first mold 31 has a first recess 31a. The second mold 32 has a second recess 32a. The cavity of the mold 30 is formed by the first recess 31a and the second recess 32a. The heat dissipation member 20 is placed in the first recess 31a. Due to design tolerances of the first mold 31, a slight gap occurs between the first mold 31 and the heat dissipation member 20. The insulating circuit board 10 and the power semiconductor element 15 are placed in the second recess 32a. Then, a resin such as a thermosetting resin is injected into the cavity of the mold 30. The resin is then cured. The resin injected into the slight gap between the first mold 31 and the heat dissipation member 20 is cured to form the second sealing portion 19. The resin injected into the second recess 32a of the second mold 32 is cured to form the first sealing portion 18. In this way, the power semiconductor element 15 and at least a portion of the insulating circuit board 10 are sealed with the sealing member 17, thereby forming the power module 1. The power module 1 is then removed from the mold 30.

[0034] 3, cooler 25 is attached to heat dissipation member 20 via bonding member 24 (step S4). Bonding member 24 is, for example, solder or a sintered metal particle. In this way, electronic device 2 is obtained.

[0035] The operation of the power module 1 and electronic device 2 of this embodiment will be described in comparison with a power module 1a and electronic device 2a of a comparative example shown in Fig. 5. The power module 1a and electronic device 2a of the comparative example are configured similarly to the power module 1 and electronic device 2 of this embodiment, but differ from the power module 1 and electronic device 2 of this embodiment in that they do not include a heat dissipation member 20. In the comparative example, the conductive pattern layer 13 is bonded to a cooler 25 via a bonding member 24. A surface 13b of the conductive pattern layer 13 is the cooler bonding surface 21.

[0036] In the comparative example, only the bonding member 24 is disposed between the insulating circuit board 10 and the cooler 25. Mainly, only the bonding member 24 bears the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. As shown in Fig. 6, the bonding member 24 undergoes large shear deformation.

[0037] As a result, the stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the bonding members 24 (particularly the stress applied to the insulating layer 11 from the corners 14 of the conductive pattern layer 13 in contact with the insulating layer 11) increases. Cracks are likely to occur in the insulating layer 11. Furthermore, since the bonding members 24 are subject to large shear deformation, shear strain at the peripheral portions of the bonding members 24 increases. Cracks are likely to occur at the peripheral portions of the bonding members 24. As a result, the reliability of the power module 1a and electronic device 2a of the comparative example decreases.

[0038] In contrast, in this embodiment, in addition to the bonding member 24, the heat dissipation member 20 is also disposed between the insulating circuit board 10 and the cooler 25. A space exists on the heat dissipation member 20 side of the first sealing portion 18, and the side surface 20a of the heat dissipation member 20 is covered with the second sealing portion 19, which is thinner than the first sealing portion 18. The heat dissipation member 20 can undergo shear deformation with almost no constraint by the second sealing portion 19. That is, as shown in FIG. 7 , both the heat dissipation member 20 and the bonding member 24 can undergo shear deformation.

[0039] Therefore, both the heat dissipation member 20 and the bonding members 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 of this embodiment is less severe than that of the bonding members 24 of the comparative example. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 (particularly, the stress applied to the insulating layer 11 from the corners 14 of the conductive pattern layer 13 in contact with the insulating layer 11) is reduced. Cracks are less likely to occur in the insulating layer 11. Furthermore, because both the heat dissipation member 20 and the bonding members 24 bear the shear strain, the shear deformation of the bonding members 24 of this embodiment is less severe than that of the bonding members 24 of the comparative example. The shear strain at the peripheral edges of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral edges of the bonding members 24. As a result, the reliability of the power module 1 and the electronic device 2 of this embodiment is improved.

[0040] The power module 1 and the electronic device 2 of this embodiment include a heat dissipation member 20. There is no need to process the cooler 25 into a special shape to provide a space between the cooler 25 and the first sealed portion 18. Therefore, the cost of the cooler 25 attached to the power module 1 can be reduced.

[0041] Referring to FIG. 8, in a modification of this embodiment, the heat dissipation member 20 and the conductive pattern layer 13 may be a single member such as a single metal member.

[0042] The effects of the power module 1 and electronic device 2 of this embodiment will be described. The power module 1 of this embodiment includes an insulating circuit board 10, a power semiconductor element 15, a sealing member 17, and a heat dissipation member 20. The insulating circuit board 10 includes an insulating layer 11, a circuit pattern layer 12, and a conductive pattern layer 13. The insulating layer 11 has a first main surface (main surface 11a) and a second main surface (main surface 11b) opposite the first main surface. The circuit pattern layer 12 is disposed on the first main surface. The conductive pattern layer 13 is disposed on the second main surface. The power semiconductor element 15 is bonded to the circuit pattern layer 12. The sealing member 17 includes a first sealing portion 18 that seals the power semiconductor element 15 and at least a portion of the insulating circuit board 10, and a second sealing portion 19 that protrudes from the first sealing portion 18. The heat dissipation member 20 is connected to the conductive pattern layer 13 and protrudes from the first sealing portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. In a plan view of the first main surface, the outer peripheral edge of the heat dissipation member 20 is inside the outer peripheral edge of the first sealing portion 18. The heat dissipation member 20 has a side surface 20a extending in the stacking direction. At least a portion of the side surface 20a of the heat dissipation member 20 is covered with the second sealing portion 19. The first sealing portion 18 is a resin bulk. The second sealing portion 19 is a resin film. The second sealing portion 19 is thinner than the first sealing portion 18.

[0043] Therefore, both the heat dissipation member 20 and the bonding members 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral portion of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral portion of the bonding members 24. The reliability of the power module 1 is improved.

[0044] In the power module 1 of this embodiment, the second sealing portion 19 has a thickness of 0.5 mm or less.

[0045] Therefore, the heat dissipation member 20 can undergo shear deformation with almost no constraint by the second sealing portion 19. That is, both the heat dissipation member 20 and the bonding members 24 can undergo shear deformation. Both the heat dissipation member 20 and the bonding members 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral portion of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral portion of the bonding members 24. The reliability of the power module 1 is improved.

[0046] Since the power module 1 of this embodiment includes the heat dissipation member 20, it is not necessary to process the cooler 25 into a special shape, which reduces the cost of the cooler 25 attached to the power module 1.

[0047] In the power module 1 of this embodiment, the protruding height h of the heat dissipation member 20 from the first sealing portion 18 is 1 mm or more.

[0048] Since the thickness of the heat dissipation member 20, which can undergo shear deformation with almost no constraint from the sealing member 17, is increased, the shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral portions of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral portions of the bonding members 24. The reliability of the power module 1 is improved.

[0049] In the power module 1 of this embodiment, the heat dissipation member 20 is bonded to the conductive pattern layer 13 .

[0050] Therefore, the heat dissipation member 20 can be made of the same material as the conductive pattern layer 13, or can be made of a material different from that of the conductive pattern layer 13. This improves the degree of freedom in designing the power module 1.

[0051] In the power module 1 of this embodiment, the heat dissipation member 20 is formed of a material different from that of the conductive pattern layer 13 .

[0052] Therefore, the heat dissipation member 20 can bear more of the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. Cracks are less likely to occur in the bonding members 24 and the insulating layer 11. The reliability of the power module 1 is improved.

[0053] In the power module 1 of this embodiment, the heat dissipation member 20 and the conductive pattern layer 13 are a single member.

[0054] Since there is no bonding interface between the heat dissipation member 20 and the conductive pattern layer 13, mechanical damage is less likely to occur between the heat dissipation member 20 and the conductive pattern layer 13. This improves the reliability of the power module 1.

[0055] In the power module 1 of this embodiment, the heat dissipation member 20 is made of the same material as the conductive pattern layer 13 .

[0056] The cost of the heat dissipation member 20 is reduced, thereby reducing the cost of the power module 1. The manufacturing method for the power module 1 of this embodiment includes connecting the heat dissipation member 20 to the insulating circuit board 10 (step S1). The insulating circuit board 10 includes an insulating layer 11, a circuit pattern layer 12, and a conductive pattern layer 13. The insulating layer 11 has a first main surface (main surface 11a) and a second main surface (main surface 11b) opposite the first main surface. The circuit pattern layer 12 is disposed on the first main surface. The conductive pattern layer 13 is disposed on the second main surface. The heat dissipation member 20 is connected to the conductive pattern layer 13. The manufacturing method for the power module 1 of this embodiment also includes sealing at least a portion of the insulating circuit board 10 with a sealing member 17 by molding using a mold 30 (step S3). The sealing member 17 includes a first sealing portion 18 that seals the insulating circuit board 10 and a second sealing portion 19 that protrudes from the first sealing portion 18. The heat dissipation member 20 protrudes from the first sealing portion 18 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. In a plan view of the first main surface, the outer peripheral edge of the heat dissipation member 20 is inside the outer peripheral edge of the first sealing portion 18. The heat dissipation member 20 has a side surface 20a extending in the stacking direction. At least a portion of the side surface 20a of the heat dissipation member 20 is covered with the second sealing portion 19. The first sealing portion 18 is a resin bulk. The second sealing portion is a resin film. The second sealing portion 19 is thinner than the first sealing portion 18.

[0057] Therefore, both the heat dissipation member 20 and the bonding members 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral portion of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral portion of the bonding members 24. The reliability of the power module 1 is improved.

[0058] Because the power module 1 obtained by the manufacturing method of the power module 1 of this embodiment includes the heat dissipation member 20, there is no need to process the cooler 25 into a special shape. This reduces the cost of the cooler 25 attached to the power module 1. Furthermore, by molding using the mold 30, the first sealing portion 18 and the second sealing portion 19 can be formed together. This reduces the manufacturing cost of the power module 1.

[0059] In the method for manufacturing the power module 1 of this embodiment, the second sealing portion 19 has a thickness of 0.5 mm or less.

[0060] Therefore, the heat dissipation member 20 can undergo shear deformation with almost no constraint by the second sealing portion 19. That is, both the heat dissipation member 20 and the bonding members 24 can undergo shear deformation. Both the heat dissipation member 20 and the bonding members 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral portion of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral portion of the bonding members 24. The reliability of the power module 1 is improved.

[0061] The electronic device 2 of the present embodiment includes the power module 1, a bonding member 24, and a cooler 25 attached to the heat dissipation member 20 via the bonding member 24. In a plan view of the first main surface (main surface 11 a), the outer periphery of the heat dissipation member 20 is located inside the outer periphery of the cooler 25.

[0062] Therefore, both the heat dissipation member 20 and the bonding member 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the bonding member 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral portion of the bonding member 24 is reduced. Cracks are less likely to occur at the peripheral portion of the bonding member 24. The reliability of the electronic device 2 is improved.

[0063] Since the electronic device 2 of this embodiment includes the heat dissipation member 20, it is not necessary to process the cooler 25 into a special shape. This reduces the cost of the cooler 25 attached to the power module 1, and reduces the cost of the electronic device 2.

[0064] 9 and 10, a power module 1 and an electronic device 2 according to a second embodiment will be described. The power module 1 and the electronic device 2 according to the present embodiment have the same configuration as the power module 1 and the electronic device 2 according to the first embodiment, but differ mainly in the following respects.

[0065] In this embodiment, the sealing member 17 does not include the second sealing portion 19 (see FIGS. 1 and 2 ), and is composed of the first sealing portion 18. The sealing member 17 is, for example, a resin bulk. At least a part of the side surface 20 a of the heat dissipation member 20 extending in the stacking direction of the insulating layer 11 and the conductive pattern layer 13 protrudes from the sealing member 17 and is exposed from the sealing member 17. The entire side surface 20 a of the heat dissipation member 20 may protrude from the sealing member 17 or may be exposed from the sealing member 17. The protruding height h of the heat dissipation member 20 from the sealing member 17 is determined by multiplying the thickness t of the joining member 24 by the thickness t of the joining member 24. １ The protruding height h of the heat dissipation member 20 from the sealing member 17 is, for example, 1 mm or more.

[0066] In a plan view of the main surface 11a, the heat dissipation member 20 is smaller in size than the sealing member 17. Specifically, as shown in FIG. 9, in a plan view of the main surface 11a, the outer peripheral edge of the heat dissipation member 20 is located inside the outer peripheral edge of the sealing member 17. Therefore, as shown in FIG. 10, a space can be provided on the heat dissipation member 20 side relative to the sealing member 17. In a plan view of the main surface 11a, the heat dissipation member 20 is smaller in size than the cooler 25. Specifically, as shown in FIG. 9, in a plan view of the main surface 11a, the outer peripheral edge of the heat dissipation member 20 is located inside the outer peripheral edge of the cooler 25. Therefore, as shown in FIG. 10, a space can be provided between the sealing member 17 and the cooler 25. The cooler 25 is spaced apart from the sealing member 17. A space exists between the cooler 25 and the sealing member 17.

[0067] A first example of the method for manufacturing the power module 1 and the electronic device 2 of the present embodiment will be described with reference to Fig. 11. The first example of the method for manufacturing the power module 1 and the electronic device 2 of the present embodiment is similar to the example of the method for manufacturing the power module 1 and the electronic device 2 of the first embodiment, but differs from the example of the method for manufacturing the power module 1 and the electronic device 2 of the first embodiment in that it further includes exposing the side surface 20a of the heat dissipation member 20 (step S5).

[0068] Specifically, in step S5, the second sealing portion 19 formed in the sealing step (step S3) is removed. For example, the second sealing portion 19 is removed by irradiating it with laser light. In this way, the side surface 20 a of the heat dissipation member 20 is exposed from the sealing member 17.

[0069] A second example of the method for manufacturing the power module 1 and the electronic device 2 of this embodiment will be described with reference to FIG.

[0070] The power semiconductor element 15 is bonded to the insulating circuit board 10 (step S2). Step S2 of the second example of the method for manufacturing the power module 1 and the electronic device 2 of the present embodiment is similar to step S2 of the example of the method for manufacturing the power module 1 and the electronic device 2 of the first embodiment.

[0071] The power semiconductor elements 15 and at least a portion of the insulating circuit board 10 are sealed with a sealing member 17 (step S3). As shown in FIG. 13 , the sealing member 17 is formed, for example, by molding using a mold 30. The first recess 31a (see FIG. 4 ) is not provided in the first mold 31 of the mold 30 used in the second example of the method for manufacturing the power module 1 and the electronic device 2 of this embodiment. The cavity of the mold 30 is the second recess 32a provided in the second mold 32. A laminate of the insulating circuit board 10 and the power semiconductor elements 15 is placed in the cavity of the mold 30. A resin such as a thermosetting resin is injected into the cavity of the mold 30. The resin is cured. The cured resin becomes the sealing member 17. The laminate of the insulating circuit board 10, the power semiconductor elements 15, and the heat dissipation member 20 is placed in the cavity of the mold 30. In this way, the power semiconductor elements 15 and at least a portion of the insulating circuit board 10 are sealed with the sealing member 17.

[0072] 12 , heat dissipation member 20 is connected to insulating circuit board 10 (step S1). For example, heat dissipation member 20 is connected to conductive pattern layer 13 using a joining member (not shown) such as solder. In this manner, power module 1 is formed. In the second example of the method for manufacturing power module 1 and electronic device 2 of the present embodiment, heat dissipation member 20 is connected to insulating circuit board 10 after sealing member 17 is formed, and therefore step S5 of the first example of the method for manufacturing power module 1 and electronic device 2 of the present embodiment is not necessary.

[0073] Then, the cooler 25 is attached to the heat dissipation member 20 using the bonding member 24 (step S4). Step S4 of the second example of the method for manufacturing the power module 1 and the electronic device 2 of the present embodiment is similar to step S4 of the example of the method for manufacturing the power module 1 and the electronic device 2 of the first embodiment. In this way, the electronic device 2 is obtained.

[0074] Referring to FIG. 14, in a modification of this embodiment, the heat dissipation member 20 and the conductive pattern layer 13 may be a single member such as a single metal member.

[0075] The power module 1 and the electronic device 2 of this embodiment have the following effects similar to those of the power module 1 and the electronic device 2 of the first embodiment.

[0076] The power module 1 and electronic device 2 of this embodiment include an insulating circuit board 10, a power semiconductor element 15, a sealing member 17, and a heat dissipation member 20. The insulating circuit board 10 includes an insulating layer 11, a circuit pattern layer 12, and a conductive pattern layer 13. The insulating layer 11 has a first main surface (main surface 11a) and a second main surface (main surface 11b) opposite the first main surface. The circuit pattern layer 12 is disposed on the first main surface. The conductive pattern layer 13 is disposed on the second main surface. The power semiconductor element 15 is bonded to the circuit pattern layer 12. The sealing member 17 seals the power semiconductor element 15 and at least a portion of the insulating circuit board 10. The heat dissipation member 20 is connected to the conductive pattern layer 13 and protrudes from the sealing member 17 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. In a plan view of the first main surface, the outer peripheral edge of the heat dissipation member 20 is located inside the outer peripheral edge of the first sealing portion 18. The heat dissipation member 20 has a side surface 20a extending in the stacking direction. At least a part of the side surface 20a of the heat dissipation member 20 is exposed from the sealing member 17.

[0077] Therefore, both the heat dissipation member 20 and the bonding members 24 bear the shear strain caused by the difference between the linear expansion coefficient of the insulating layer 11 and the linear expansion coefficient of the cooler 25. The shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral portion of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral portion of the bonding members 24. The reliability of the power module 1 is improved.

[0078] Since the power module 1 of this embodiment includes the heat dissipation member 20, it is not necessary to process the cooler 25 into a special shape, which reduces the cost of the cooler 25 attached to the power module 1.

[0079] In the power module 1 and the electronic device 2 of this embodiment, the entire side surface 20 a of the heat dissipation member 20 is exposed from the sealing member 17 .

[0080] Since the thickness of the heat dissipation member 20, which can undergo shear deformation without being restrained by the sealing member 17, is increased, the shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral edges of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral edges of the bonding members 24. The reliability of the power module 1 is improved.

[0081] In the power module 1 and the electronic device 2 of this embodiment, the protruding height h of the heat dissipation member 20 from the sealing member 17 is 1 mm or more.

[0082] Since the thickness of the heat dissipation member 20, which can undergo shear deformation without being restrained by the sealing member 17, is increased, the shear deformation of the heat dissipation member 20 and the shear deformation of the bonding members 24 are alleviated. The stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 is reduced. Cracks are less likely to occur in the insulating layer 11. In addition, shear strain at the peripheral edges of the bonding members 24 is reduced. Cracks are less likely to occur at the peripheral edges of the bonding members 24. The reliability of the power module 1 is improved.

[0083] In the power module 1 and the electronic device 2 of this embodiment, the heat dissipation member 20 and the conductive pattern layer 13 are a single member.

[0084] Since there is no bonding interface between the heat dissipation member 20 and the conductive pattern layer 13, mechanical damage is less likely to occur between the heat dissipation member 20 and the conductive pattern layer 13. This improves the reliability of the power module 1.

[0085] Embodiment 3 A power module 1 and an electronic device 2 according to embodiment 3 will be described with reference to Figures 15 and 16. The power module 1 and the electronic device 2 according to this embodiment have the same configuration as the power module 1 and the electronic device 2 according to embodiment 2, but differ mainly in the following respects.

[0086] The heat dissipation member 20 of this embodiment is smaller in size than the heat dissipation member 20 of embodiment 2. Specifically, in a plan view of the main surface 11a, the outer peripheral edge of the heat dissipation member 20 is located inside the outer peripheral edge of the conductive pattern layer 13. The side surface 20a of the heat dissipation member 20 is located inside the side surface 13a of the conductive pattern layer 13. Therefore, the stress applied to the insulating layer 11 by the conductive pattern layer 13 in contact with the heat dissipation member 20 (particularly the stress applied to the insulating layer 11 from the corners 14 of the conductive pattern layer 13 in contact with the insulating layer 11) is reduced. Cracks are less likely to occur in the insulating layer 11. The reliability of the power module 1 and the electronic device 2 is improved.

[0087] Fourth Embodiment A power module 1 and an electronic device 2 according to a fourth embodiment will be described with reference to Figures 17 and 18. The power module 1 and the electronic device 2 according to this embodiment have the same configuration as the power module 1 and the electronic device 2 according to the second embodiment, but differ mainly in the following respects.

[0088] The heat dissipation member 20 of the present embodiment is larger in size than the heat dissipation member 20 of the second embodiment. Specifically, in a plan view of the main surface 11a, the outer periphery of the heat dissipation member 20 is located outside the outer periphery of the conductive pattern layer 13. The side surface 20a of the heat dissipation member 20 is located outside the side surface 13a of the conductive pattern layer 13. Therefore, the heat dissipation member 20 spreads heat from the power semiconductor elements 15 in a direction along the main surface 11a and then transfers the heat to the cooler 25. Even if the thermal conductivity of the cooler 25 is lower than the thermal conductivity of the heat dissipation member 20, the power module 1 can be cooled efficiently.

[0089] Fifth Embodiment A power module 1 and an electronic device 2 according to a fifth embodiment will be described with reference to Fig. 19. The power module 1 and the electronic device 2 according to this embodiment have the same configuration as the power module 1 and the electronic device 2 according to the second embodiment, but differ mainly in the following respects.

[0090] In this embodiment, the bottom surface 18b of the sealing member 17 is closer to the cooler bonding surface 21 of the heat dissipation member 20 than the surface 13b of the conductive pattern layer 13 in the stacking direction of the insulating layer 11 and the conductive pattern layer 13. The region of the side surface 20a of the heat dissipation member 20 that is close to the conductive pattern layer 13 is covered with the sealing member 17. The periphery 22 of the bonding portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is covered with the sealing member 17. Therefore, the bonding portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is mechanically reinforced by the sealing member 17. The reliability of the bonding portion 23 between the heat dissipation member 20 and the conductive pattern layer 13 is improved. The reliability of the power module 1 and the electronic device 2 is improved.

[0091] A part of the side surface 20a of the heat dissipation member 20 (specifically, a region of the side surface 20a of the heat dissipation member 20 close to the cooler bonding surface 21) protrudes from the sealing member 17 and is exposed from the sealing member 17. The protruding height h of the heat dissipation member 20 from the sealing member 17 is determined by multiplying the thickness t of the bonding member 24 by the thickness h of the bonding member 24. １ The protruding height h of the heat dissipation member 20 from the sealing member 17 is, for example, 1 mm or more. In this embodiment, the protruding height h of the heat dissipation member 20 is smaller than the thickness of the heat dissipation member 20.

[0092] Sixth Embodiment A power module 1 and an electronic device 2 according to a sixth embodiment will be described with reference to Fig. 20. The power module 1 and the electronic device 2 according to this embodiment have the same configuration as the power module 1 and the electronic device 2 according to the second embodiment, but differ mainly in the following respects.

[0093] In the power module 1 and the electronic device 2 of this embodiment, the peripheral region 21a of the cooler bonding surface 21 of the heat dissipation member 20 is chamfered. The peripheral region 21a of the cooler bonding surface 21 is not particularly limited, but may be C-chamfered or R-chamfered. This increases the thickness of the peripheral portion of the bonding member 24. This makes it less likely for cracks to occur in the peripheral portion of the bonding member 24. This improves the reliability of the power module 1 and the electronic device 2.

[0094] Seventh Embodiment In this embodiment, any one of the power modules 1 according to the first to sixth embodiments and their modifications is applied to a power conversion device. Although the present disclosure is not limited to a specific power conversion device, the seventh embodiment will be described below as a case where any one of the power modules 1 according to the first to sixth embodiments and their modifications is applied to a three-phase inverter.

[0095] The power conversion system shown in Fig. 21 is composed of a power supply 100, a power conversion device 200, and a load 300. The power supply 100 is a DC power supply and supplies DC power to the power conversion device 200. The power supply 100 is not particularly limited, and may be composed of, for example, a DC system, a solar cell, or a storage battery, or may be composed of a rectifier circuit or an AC / DC converter connected to an AC system. The power supply 100 may be composed of a DC / DC converter that converts DC power output from the DC system into a predetermined power.

[0096] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, and converts DC power supplied from the power source 100 into AC power and supplies the AC power to the load 300. As shown in Fig. 21 , the power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal to the main conversion circuit 201 to control the main conversion circuit 201.

[0097] The load 300 is a three-phase electric motor driven by AC power supplied from the power conversion device 200. The load 300 is not limited to a specific application, but is an electric motor mounted on various electrical devices, and is used as an electric motor for, for example, a hybrid vehicle, an electric vehicle, a railroad car, an elevator, or an air conditioning device.

[0098] The power conversion device 200 will be described in detail below. The main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown). The switching element switches the voltage supplied from the power supply 100, thereby converting DC power supplied from the power supply 100 into AC power and supplying it to the load 300. The main conversion circuit 201 may have a variety of specific circuit configurations. The main conversion circuit 201 of this embodiment is a two-level, three-phase full-bridge circuit, and may include six switching elements and six freewheeling diodes connected in anti-parallel to each switching element. The power semiconductor elements 15 included in any of the power modules 1 of the first to sixth embodiments and their modifications may be used as each switching element and each freewheeling diode of the main conversion circuit 201. The power module 202 included in the main conversion circuit 201 may be any of the power modules 1 of the first to sixth embodiments and their modifications. The six switching elements are connected in series in pairs to form upper and lower arms, and each upper and lower arm constitutes one phase (U phase, V phase, and W phase) of the full-bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0099] The main conversion circuit 201 also includes a drive circuit (not shown) that drives each switching element. The drive circuit may be built into the power module 202 or provided externally to the power module 202. The drive circuit generates drive signals that drive the switching elements included in the main conversion circuit 201 and supplies the drive signals to the control electrodes of the switching elements of the main conversion circuit 201. Specifically, in accordance with a control signal from the control circuit 203, the drive circuit outputs a drive signal that turns the switching element on and a drive signal that turns the switching element off to the control electrodes of each switching element.

[0100] The control circuit 203 controls the switching elements of the main conversion circuit 201 so that power is supplied to the load 300. Specifically, it calculates the time (on time) that each switching element of the main conversion circuit 201 should be in the on state based on the power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control, which modulates the on time of the switching elements according to the voltage to be output to the load 300. The control circuit 203 then outputs a control command (control signal) to a drive circuit included in the main conversion circuit 201 so that an on signal is output to a switching element that should be in the on state at each time point, and an off signal is output to a switching element that should be in the off state at each time point. In accordance with this control signal, the drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element.

[0101] In the power conversion device 200 of this embodiment, any of the power modules 1 of the first to sixth embodiments and their modifications is applied as the power module 202 included in the main conversion circuit 201. Therefore, the power conversion device 200 of this embodiment has improved reliability.

[0102] In the present embodiment, an example in which the present disclosure is applied to a two-level three-phase inverter has been described, but the present disclosure is not limited to this and can be applied to various power conversion devices. Although the present embodiment describes a two-level power conversion device, the present disclosure may be applied to a three-level power conversion device or a multi-level power conversion device. When the power conversion device supplies power to a single-phase load, the present disclosure may be applied to a single-phase inverter. When the power conversion device supplies power to a DC load or the like, the present disclosure may be applied to a DC / DC converter or an AC / DC converter.

[0103] The power conversion device to which the present disclosure is applied is not limited to cases where the load is an electric motor, and may be incorporated, for example, into a power supply device for an electric discharge machine or a laser processing machine, or a power supply device for an induction heating cooker or a contactless power supply system. The power conversion device to which the present disclosure is applied may also be used as a power conditioner for a solar power generation system, a power storage system, or the like.

[0104] The presently disclosed embodiments 1 to 7 and their modifications should be considered to be illustrative in all respects and not restrictive. Unless there is a contradiction, at least two of the presently disclosed embodiments 1 to 7 and their modifications may be combined. The scope of the present disclosure is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims.

[0105] REFERENCE SIGNS LIST 1, 1a Power module, 2, 2a Electronic device, 10 Insulated circuit board, 11 Insulating layer, 11a, 11b Main surface, 11c Side surface, 12 Circuit pattern layer, 13 Conductive pattern layer, 13a Side surface, 13b Surface, 14 Corner portion, 15 Power semiconductor element, 16 Conductive bonding member, 17 Sealing member, 18 First sealing portion, 18a Side surface, 18b Bottom surface, 19 Second sealing portion, 19a Side surface, 20 Heat dissipation member, 20a Side surface, 21 Cooler bonding surface, 21a Peripheral region, 22 Periphery, 23 Bonding portion, 24 Bonding member, 25 Cooler, 30 Mold, 31 First mold, 31a First recess, 32 Second mold, 32a Second recess, 100 Power source, 200 Power conversion device, 201 Main conversion circuit, 202 Power module, 203 control circuit, 300 load.

Claims

1. A power module comprising: an insulating layer having a first main surface and a second main surface opposite the first main surface, a circuit pattern layer disposed on the first main surface, and a conductive pattern layer disposed on the second main surface; a power semiconductor element bonded to the circuit pattern layer; a sealing member including a first sealing portion that seals the power semiconductor element and at least a portion of the insulating circuit board and a second sealing portion protruding from the first sealing portion; and a heat dissipation member connected to the conductive pattern layer and protruding from the first sealing portion in a stacking direction of the insulating layer and the conductive pattern layer, wherein in a plan view of the first main surface, an outer periphery of the heat dissipation member is inside an outer periphery of the first sealing portion, the heat dissipation member has a side extending in the stacking direction, at least a portion of the side of the heat dissipation member is covered by the second sealing portion, the first sealing portion is a resin bulk, and the second sealing portion is a resin film, and the second sealing portion is thinner than the first sealing portion.

2. The power module according to claim 1, wherein the second sealing portion has a thickness of 0.5 mm or less.

3. A power module comprising: an insulating layer having a first main surface and a second main surface opposite the first main surface, a circuit pattern layer disposed on the first main surface, and a conductive pattern layer disposed on the second main surface; a power semiconductor element bonded to the circuit pattern layer; a sealing member that seals the power semiconductor element and at least a portion of the insulating circuit board; and a heat dissipation member connected to the conductive pattern layer and protruding from the sealing member in a stacking direction of the insulating layer and the conductive pattern layer, wherein, in a plan view of the first main surface, an outer periphery of the heat dissipation member is inside the outer periphery of the sealing member, the heat dissipation member has a side extending in the stacking direction, and at least a portion of the side of the heat dissipation member is exposed from the sealing member.

4. A power module according to claim 1 or 2, wherein the protruding height of said heat dissipation member from said first sealing portion is 1 mm or more.

5. The power module according to claim 3, wherein all of the side surfaces of the heat dissipation member are exposed from the sealing member.

6. A power module according to claim 3 or 5, wherein the protruding height of said heat dissipation member from said sealing member is 1 mm or more.

7. A power module according to any one of claims 1 to 6, wherein the heat dissipation member is bonded to the conductive pattern layer.

8. A power module according to claim 3, wherein the heat dissipation member is bonded to the conductive pattern layer, and the periphery of the joint between the heat dissipation member and the conductive pattern layer is covered with the sealing member.

9. A power module according to any one of claims 1 to 6, wherein the heat dissipation member and the conductive pattern layer are a single member.

10. A power module according to any one of claims 1 to 8, wherein the heat dissipation member is formed of a material different from that of the conductive pattern layer.

11. A power module according to any one of claims 1 to 9, wherein the heat dissipation member is formed from the same material as the conductive pattern layer.

12. A power module according to any one of claims 1 to 11, wherein, in the planar view of the first main surface, the outer peripheral edge of the heat dissipation member is inside the outer peripheral edge of the conductive pattern layer.

13. A power module according to any one of claims 1 to 11, wherein in the planar view of the first main surface, the outer peripheral edge of the heat dissipation member is outside the outer peripheral edge of the conductive pattern layer.

14. A power module according to any one of claims 1 to 13, wherein the heat dissipation member has a cooler joint surface on a side opposite to the insulating circuit board, and a peripheral area of ​​the cooler joint surface is chamfered.

15. A method for manufacturing a semiconductor device comprising: connecting a heat dissipation member to an insulating circuit board, the insulating circuit board including an insulating layer having a first main surface and a second main surface opposite to the first main surface, a circuit pattern layer disposed on the first main surface, and a conductive pattern layer disposed on the second main surface, the heat dissipation member being connected to the conductive pattern layer; and sealing at least a portion of the insulating circuit board with a sealing member by molding using a mold, the sealing member including a first sealing portion that seals the insulating circuit board and a second sealing portion protruding from the first sealing portion, the heat dissipation member protruding from the first sealing portion in a stacking direction of the insulating layer and the conductive pattern layer, an outer periphery of the heat dissipation member is located inside the outer periphery of the first sealing portion in a plan view of the first main surface, the heat dissipation member has a side surface extending in the stacking direction, and at least a portion of the side surface of the heat dissipation member is covered with the second sealing portion, the first sealing portion being a resin bulk, and the second sealing portion being a resin film. The method for manufacturing a power module, wherein the second sealing portion is thinner than the first sealing portion.

16. The method for manufacturing a power module according to claim 15, wherein the second sealing portion has a thickness of 0.5 mm or less.

17. An electronic device comprising: the power module described in any one of claims 1 to 14; a joining member; and a cooler attached to the heat dissipation member via the joining member, wherein, in the planar view of the first main surface, the outer peripheral edge of the heat dissipation member is inside the outer peripheral edge of the cooler.

18. A power conversion device comprising: a main conversion circuit having the power module according to any one of claims 1 to 14, which converts and outputs input power; and a control circuit which outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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