Assembly for plasma enhanced vapour deposition comprising integrated microwave waveguides

Abstract

The present invention relates to an assembly for chemical plasma deposition under low pressure conditions, more specifically plasma enhanced chemical vapor deposition, comprising a support component that integrates both a waveguide and a support component in one piece, where the waveguide is incorporated within the support component.

Description

ASSEMBLY FOR PLASMA ENHANCED VAPOUR DEPOSITIONCOMPRISING INTEGRATED MICROWAVE WAVEGUIDES

[0001] The present invention relates to an assembly for chemical plasma deposition under low pressure conditions, more specifically plasma enhanced chemical vapor deposition, comprising a support component that integrates both a waveguide and a support component in one piece, where the waveguide is incorporated within the support component.BACKGROUND

[0002] Plasma enhanced chemical vapour deposition (PECVD) is a well- known process for depositing thin films on a variety of substrates. Several industries varying from semiconductor to photovoltaic cell manufacture use PECVD systems to deposit thin films upon substrates. PECVD systems vary widely in their application, just as the films they deposit vary widely in chemical and physical properties, and their purpose.

[0003] The deposition of thin-film coatings is used in various applications, such as electronics (battery materials, microchips, and the like), corrosionresistant and tribological coatings such as refractory films (titanium or aluminium nitrides, carbides and oxides), coatings having beneficial optical properties (anti-reflection, Solar-protection, filter, and the like.), coatings providing other biological or physiochemical properties (antimicrobial, selfcleaning, hydrophilic, hydrophobic, oxygen impermeable packaging layer and the like.), and conductive films for various applications (photovoltaics, LEDs, OLEDs, organic photovoltaics, and the like.).

[0004] Typical substrates comprise glass, steel, copper foils, ceramics, organic polymers, thermoplastics, and the like.

[0005] The device for PECVD typically comprises a reactor, also called a chemical vapor deposition vacuum chamber, or just “vacuum chamber”, that is specifically designed for Plasma-Enhanced Chemical Vapor Deposition (PECVD) processes, and is a system where the deposition of thin films or coatings takes place by utilizing a plasma source to generate a gas discharge from the feedstock material. In PECVD, one or more gaseous reactants are used to form a thin film / layer on the surface of a substrate. A plasma is formed from the gaseous chemicals in the vacuum chamber.

[0006] During PECVD processes using linear plasma sources, a first gas, which contains little to no chemically active deposition material of the process, is often introduced into the plasma source near the antenna, while a second gas, which contains most or all of chemically active deposition material of the process, is introduced into the plasma source near a substrate surface of the to be treated substrate.

[0007] For most industrial applications deposition of a film of homogeneous thickness onto a substrate is desirable, especially for continuous processes. One approach employed in the art is the use of PECVD with linear plasma sources. These linear plasma sources typically comprise a rod-shaped antenna, which is arranged within a co-axial dielectric tube. The rod-shaped antenna is often referred to as the inner conductor of a coaxial conductor assembly. The outer conductor of is then formed using plasma generated on the outside dielectric tube. This coaxial conductor arrangement forms the actual plasma source. In some cases, the linear plasma source is surrounded by a baffle assembly, or wall with an opening, through which the plasma emerges in the direction of a substrate to be coated. Such baffles and / or walls allow for control of the direction of the plasma. In such systems, the plasma source extends along an axis that extends along the axis of the rod-shaped antenna with a defined length, thereby providing a linear plasma source that is substantially uniform along the length of the linear plasma source. Examples of such sources can be found in DE 19812558 B4.The plasma production can include microwave frequency (MW) plasma, also known as glow-discharge, radio frequency (RF) plasma, arc plasma, and the like. When the microwave frequency is used, plasma is produced by the application of a high frequency electric field of magnitude of 2.45 GHz to a carrier gas such as oxygen, argon, or nitrogen at a low pressure.

[0008] As deposition processes are scaled up in industrial-scale operations, the vacuum chambers tend to increase significantly in size. As a result, larger vacuum chambers, in particular, are prone to deformation due to the significant pressure differential they experience, where the pressure differential refers to the difference between the ambient pressure outside the vacuum chamber and the low-pressure environment inside the chamber. When a vacuum chamber experiences a significant pressure differential, the force exerted on its walls can be considerable. In particular, when the higher external pressure attempts toequalize with the lower internal pressure, the effect is exerting a force on the chamber's structure. This force can lead to deformation, causing the chamber to warp or distort. Therefore, the vacuum chambers are typically reinforced to maintain structural stability, prevent leakage, stress in materials, among other factors.

[0009] Reinforcement of vacuum chamber walls can be achieved through various methods, such as using thicker or stronger wall materials, attaching reinforcement structures (such as ribs) to the inside or outside of the vacuum chamber walls, or employing reinforcement beams or support members between opposing walls. These approaches effectively counteract the inward pressure and mitigate deformation.

[0010] For example, document CN101728206B relates to a plasma reactor for PECVD treatment of large-size substrates, that comprises a vacuum process chamber. This document tries to solve the problem of sagging reinforcement. Overall, the system ensures that the sagging of the reinforcement and reactor top caused by gravity and elevated temperatures is effectively compensated using a combination of reinforcement, compensation partition, and supporting elements.

[0011] Furthermore, in industrial scale for a deposition processes, multiple radiation sources are typically built into the vacuum chamber. This also requires the use of an internal structure to support the respective plasma sources.

[0012] Linear plasma sources such as described in DE 19812558 B4 usually require two radiofrequency radiation generators, each located at a distal end of the antenna or antenna array to offer essentially equal amounts of radiation being transmitted to each side of the antenna.

[0013] However, the downsides of having two radiofrequency generators per one plasma source are numerous. Variability per radiation generator leads to variability in deposition quality. This can cause the deposition of the film to be uneven, with some areas being thicker or thinner than others. The radiation generators may not be perfectly synchronized, which can lead to variations in the plasma power and density. Also each radiation generator requires individual tuning, maintenance, and infrastructure. This leads to complex equipment design and complex equipment operation, maintenance, and servicing.

[0014] Accordingly one of the aims of the present invention is to solve the disadvantages of the prior art regarding the use of multiple radiation generators.

[0015] When constructing a vacuum chamber, it is essential to minimize the complexity within its interior. Any structures introduced within the chamber can potentially result in vacuum leaks, flow restrictions, increased maintenance and cleaning requirements, as well as larger chamber dimensions.

[0016] The present invention also aims to address the challenges associated with multiple ports / lines and reinforcement elements by eliminating unnecessary complexities, maximizing the utilization of the available space and providing a compact and robust solution, and thus streamlining the construction process of an assembly for PECVD.BRIEF SUMMARY

[0017] The present invention relates to an assembly suitable for plasma enhanced chemical vapour deposition (PECVD), having an improved air tightness and reduced structural complexity. More specifically, the assembly comprises a support member where a waveguide is incorporated within the cavity of the body of the support member, forming a single structural component, which eliminates the need for a separate waveguide component. This arrangement provides a number of advantages, including improved air tightness, reduced structural complexity, and increased flexibility in the design of the assembly.

[0018] A first aspect of the present invention relates to an assembly for depositing a film on a surface of a substrate, the assembly comprising: a. a low-pressure enclosure comprising walls, and being configured to maintain a low-pressure environment during the deposition process; b. at least one plasma source configured to generate a plasma within the low-pressure enclosure, wherein the plasma is utilized for a chemical vapour deposition process; c. a power supply system connected to the plasma source, configured to provide electrical energy for plasma generation; d. a waveguide system configured to guide the energy released by the power supply system to the plasma source; e. a substrate holder configured to support a substrate to be coated, the substrate holder being positioned within the low-pressure enclosure;f. a coating precursor material inlet system comprising one or more fluid inlets configured to introduce precursor components into the low-pressure enclosure; g. an exhaust system comprising one or more exhaust ports configured to remove residual precursor components and by-products from the low- pressure enclosure; and h. at least one support member connected to and extending between at least two opposing walls of the enclosure, the support member being configured to stabilize the enclosure walls against deformation under a pressure differential between the exterior and interior of the low-pressure enclosure.

[0019] Further, the support member comprises a body and a waveguide, the body having an internal lumen spanning the support member and having an opening in fluid communication with the exterior of the chamber on each side of the respective wall, wherein the body of the support member surrounds the waveguide, the waveguide being integrated into its internal lumen.

[0020] Further, the waveguide system of the assembly may comprise a splitter block being connected to a single microwave generator, a. a rectangular return bar, b. the first coaxial waveguide having a first end and a second end, and c. the second coaxial waveguide having a first end and a second end, d. where each of the first and second coaxial waveguides are connected with their respective first ends to the splitter block and where the first and the second coaxial waveguides are connected with their respective second ends to the rectangular return bar.

[0021] A further aspect of the invention relates to the use of a single microwave generator for each plasma source, with the radiation from the microwave generator being fed to both ends of the plasma source antenna.

[0022] A further aspect of the present invention relates to an assembly for depositing a film on a surface of a substrate, that may comprise a linear plasma source with a first end and a second end may comprise an antenna and an co-axial shielding element; and at least one set of gas manifolds, each set comprising at least one first gas conduit(s) provided with at least one first gas outlet port for providing one or more first gaseous substances to a chemical vapour deposition chamber; at least one exhaust gas conduit(s) each providedwith one or more exhaust gas inlet port(s) for removing one or more exhaust gaseous substances from a chemical vapour deposition chamber.

[0023] The assembly for depositing a film on a surface of a substrate in accordance with the present invention may comprise a coating precursor material inlet system comprising one or more fluid (gas) inlets configured to introduce precursor components into the low-pressure enclosure, i.e. the vacuum chamber.The at least one set of gas manifolds additionally may comprise at least one second gas conduit(s) provided with at least two gas outlet ports or at least two second gas conduits provided with at least one gas outlet port for providing one or more second gaseous substances to a chemical vapour deposition chamber. The assembly may additionally comprise a plurality of plasma confinement magnets.

[0024] In a further aspect, the assembly additionally may comprise:(i)means for providing a substrate to the process chamber;(ii) means for providing a first gas to the chemical vapour source assembly(iii) means for providing a second gas to the chemical vapour source assembly; and (iv)means for removing an exhaust gas from the chemical vapour source assembly.

[0025] The device of the present invention features an exhaust system comprising one or more exhaust ports configured to remove residual precursor components and by-products from the low-pressure enclosure. When the precursor gases enter the plasma zone, which is created by the interaction with the microwave source, they undergo dissociation and ionization. This leads to the formation of highly reactive species like ions, electrons, and radicals within the plasma. These species interact with each other and with the substrate surface, facilitating the deposition of the desired thin film.

[0026] In another aspect, the present invention relates to a low-pressure enclosure for an assembly for depositing a film on a surface of a substrate comprising a first and second wall, and at least one support member being connected to and extending between the first and the second wall of the low- pressure enclosure, the support member being configured to stabilize the enclosure first and second walls against deformation under a pressure differential between the exterior and interior of the low-pressure enclosure, wherein the support member comprises a body and a waveguide, the body having an internal lumen spanning the support member and having an openingin fluid communication with the exterior of the chamber on each side of the respective wall, wherein the body of the support member surrounds the waveguide being integrated into the internal lumen of the body.

[0027] To maintain the low-pressure environment within the vacuum chamber, various pumps may be employed. These pumps, such as turbomolecular pumps and rotary vane pumps, work together to evacuate the chamber and remove any byproducts or unreacted gases during the deposition process.

[0028] The vacuum chamber or low-pressure enclosure may feature gas inlets through which precursor gases, such as silane or methane, are introduced.These gases are essential for the deposition of thin films. The hollow (support) members, apart from providing stability, may also serve as gas channels, allowing the controlled introduction and distribution of the precursor gases within the chamber.

[0029] Another aspect of the present invention relates to a method for coating a substrate comprising the following steps: a. providing a substrate to a chemical vapour deposition, b. providing energy to the linear plasma source; c. providing a first gas and second gas to the linear plasma source assembly; d. providing a first substrate past a first side of the linear plasma source assembly to apply a first coating on a first surface of the substrate; e. passing the first substrate past a second side of the linear plasma source assembly to apply a second coating on the substrate, wherein the first gas comprises a carrier gas and a reactant gas, the second gas comprises a precursor gas.

[0030] The step b) of the method for coating may comprise the provision of microwave energy to the linear plasma source assembly.

[0031] The method for coating can comprise a step for depositing one or more of silicon, silicon nitride, silicon carbide or silica.

[0032] The method may be used for depositing coatings onto a conductive substrate to form an anode material, preferably depositing silicon onto a copper substrate.

[0033] The coating on the substrate can be applied using a continuous PECVD process, that is a method of depositing thin films or coating onto substrate in a continuous and uninterrupted manner, where the substrate to becoated can be continuously fed into the PECVD vacuum chamber by for example by roll-to-roll mechanism, or similar arrangement.

[0034] The substrates in question may be of various types, such as glass, steel, copper films, foils, ceramics, organic polymers, and thermoplastics. For most industrial applications deposition of a film of homogeneous depth onto a substrate is desirable, especially for continuous processes.

[0035] Further, this method is used for preparing anode materials by depositing silicon onto a conductive substrate.

[0036] The substrate mentioned in the method for coating comprises copper, titanium, nickel, stainless steel or polymer film, preferably wherein the substrate is selected from a cladded foil or laminated foil comprising copper, titanium, nickel, stainless steel or polymer film.

[0037] In another aspect, the present invention relates to a method for treating a surface of a substrate, the method comprising:(a) providing an assembly for depositing a film on a surface of a substrate,(b) generating a microwave power signal using the microwave generator;(c) guiding the microwave power signal into the antenna using the microwave waveguide;(d) generating a plasma around the antenna using the microwave power signal; (e) creating an at least one plasma species using the plasma; and (f) using the at least one plasma species created by the plasma to treat a surface of a substrate.

[0038] The plasma source may comprise an antenna, a dielectric layer circumferentially surrounding the antenna and a primary outer conductor, wherein the primary outer conductor may be formed by the generated plasma, and wherein the antenna, the dielectric layer, and the primary outer conductor form a second coaxial waveguide as a part of the waveguide system, and wherein the support member along with its integrated waveguide forms a first coaxial waveguide as a part of the waveguide system.

[0039] The present invention solves the challenges of the prior art by simplifying the construction of the reinforcement of the vacuum chamber and reducing the number of microwave generators per plasma source.

[0040] Advantageously, the assembly of the present invention has a reduced number of reinforcement components by integrating the support component and the waveguide into one component.

[0041] Advantageously, the assembly for plasma enhanced chemical vapor deposition of the present invention may be specifically designed to coat substrates or foils with uniform films, said substrates or foils having large surface areas. The substrates or foils may have width of 600-800 mm. Advantageously, the process of the present invention is conducted on an industrial scale and the assembly of the present invention is an industrial scale assembly.

[0042] Advantageously, the PECVD process may be scalable.

[0043] Advantageously, the deposition of thin-film coatings may be used in as electronics, such as batteries.

[0044] Advantageously, the assembly of the present invention may be used for applying a coating / film to both sides of a single substrate.

[0045] Advantageously, the process of applying films on the substrate may be a continuous process.

[0046] Advantageously, the assembly may comprise one microwave generator for generating microwaves.BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0047] To easily identify the discussion of any particular element or act, the most significant digit or digits in a reference number refer to the figure number in which that element is first introduced.

[0048] FIG. 1 illustrates schematically the assembly 1 for PECVD with a waveguide system in accordance with an embodiment of the present invention.

[0049] FIG. 2 illustrates an aspect of the subject matter in accordance with one embodiment. FIG. 2 shows a vacuum chamber 10, having a first wall 4, a second wall 5 opposite to the first wall 4, an opening 2 for the support member 7 and an opening 3 for the plasma source 6.FIG. 3 illustrates an aspect of the subject matter in accordance with one embodiment. FIG. 3 shows a vacuum chamber 10 comprising a first wall 4, a second wall 5, first openings 2 for the support members 7, second openings 3 for accommodating the plasma source, support members 7.

[0050] FIG. 4 illustrates an aspect of the subject matter in accordance with one embodiment, depicting a single-tube coaxial waveguide.

[0051] FIG. 4A shows an exemplary cross-section of a support member 50 having a body 53 and an inner conductor 52. FIG. 4B shows a longitudinal section of the support member 50

[0052] FIG. 5 illustrate an aspect of the subject matter in accordance with one embodiment. FIG. 5 A shows an exemplary cross-section of a support member that includes a body 43 and a coaxial waveguide. FIG. 5B shows a longitudinal section of the support member with a length L and a coaxial waveguide 41 ,42.

[0053] FIG. 6 illustrates an aspect of the subject matter in accordance with one embodiment. FIG. 6 shows a preferred embodiment of coaxial waveguide 30 comprising inner conductor 31 and outer conductor 32.

[0054] FIG. 7 illustrates an aspect of the subject matter in accordance with one embodiment. FIG. 7 shows an example of a waveguide system with mode converters.DETAILED DESCRIPTION

[0055] Terms

[0056] In the present invention the term “assembly” is being interchangeably used with the term “device” or the term “apparatus”.

[0057] In the present invention the term “waveguide” defines a structure that guides electromagnetic waves.

[0058] The term “lumen” stands for hollow space in a tube, conduit or other cylindrical structure.

[0059] The term “coaxial waveguide” defines a type of waveguide that uses an inner conductor surrounded by an outer conductor to transmit electromagnetic waves. The inner conductor and the outer conductor share the same axis. It is specifically designed to transmit electromagnetic waves in the microwave range.

[0060] The term “rectangular waveguide” is a type of waveguide that has a rectangular cross-section.

[0061] The term “inner conductor” of a waveguide defines the central conducting wire that carries the signal.

[0062] The term “outer conductor” of a waveguide defines the metal shield that surrounds the inner conductor.

[0063] The term “Plasma-enhanced chemical vapor deposition” or PECVD is a process for depositing thin films of materials on a substrate. It uses a plasmato activate a gaseous precursor, which then reacts with the substrate to form a thin film.

[0064] The term “splitter block” herein defines a device that divides a single microwave signal into two or more signals. The term “splitter block” herein is also referred as a “rectangular splitter”, or “rectangular splitter block” or “T- shaped splitter block”, or “rectangular waveguide splitter” or simply “splitter”, or "T-shaped splitter " or “Y-shaped splitter block”.

[0065] The term “plasma antenna” refers to is a device that uses electromagnetic waves to generate a plasma.

[0066] The term “TEM mode” stands for transverse electromagnetic mode. It is a mode of propagation for electromagnetic waves in a waveguide.

[0067] The term “cylindrical body” is used interchangeably with “tubular body ” or “outer shell”.

[0068] The terms “hollow member” and “support member” are used herein interchangeably.

[0069] The terms “vacuum chamber" or "low-pressure enclosure” are used herein interchangeably.

[0070] The term “power supply system” refers to an equipment responsible for providing the electrical energy needed to generate and sustain a plasma discharge in a plasma source. It supplies the necessary power to create and maintain the plasma state. The plasma is typically generated by radio frequency (RF) or direct current (DC) discharge.

[0071] In the present invention the term “Radio frequency” or (RF) is defined as the oscillation rate of an alternating electric current or voltage or of a magnetic, electric or electromagnetic field in the frequency range from 20 kHz to 300 GHz.

[0072] The plasma production can include microwave frequency (MW) plasma, also known as glow-discharge, radio frequency (RF) plasma, arc plasma, or the like. When the microwave frequency is used, plasma is produced by the application of an oscillating electromagnetic field at a frequency of 2.45 GHz at a low pressure to a carrier gas such as oxygen, argon, or nitrogen.

[0073] The term "microwave” or (MW) is defined as the oscillation rate of an alternating electric current or voltage or of a magnetic, electric or electromagnetic field in the frequency range from 300 MHz and 300 GHz respectively.Depending on the application, lower excitation frequencies such as 915 MHz and also significantly higher excitation frequencies than 2.45 GHZ can be used. The necessary waveguides are then dimensioned according to the waveguide- technical requirements of the respective excitation frequencies.

[0074] Plasma enhanced chemical vapour deposition (PECVD) can be widely employed in high volume coating of substrates with thin layers of deposited material. PECVD is used to deposit thin films from a gaseous vapour state onto substrates where it forms a solid state. The deposition process may involve chemical reactions which occur after introductions of the feedstock gasses to the plasma. The plasma is typically generated by radio frequency (RF) or direct current (DC) discharge between two electrodes, with the space between the electrodes comprising the reacting gasses.

[0075] The assembly for depositing a film / coating on a surface of a substrate, comprises a vacuum chamber, a plasma source, a power supply system, a substrate holder, a coating precursor material inlet system, an exhaust system, at least one support member, a waveguide and a splitter block.

[0076] The device / assembly of the present invention is preferably for plasma enhanced vapor deposition coating and has a vacuum chamber. The vacuum chamber may be a low-pressure enclosure that comprises a chamber enclosed by walls, and further maintains a low-pressure environment during the deposition process.

[0077] The plasma source of the present invention generates plasma within the vacuum chamber. The plasma source that can be utilized is a large scale plasma source, designed to produce a substantial plasma over a significant area or volume. It may be capable of generating and sustaining a plasma discharge on a larger scale compared to smaller or laboratory-scale plasma sources. An examples of large-scale plasma sources may include linear plasma sources.

[0078] In the context of the present invention, a primary challenge to address is the reduction of components within the vacuum chamber, while maintaining its structural integrity and optimal functionality. The solution proposed to overcome this challenge involves integrating the waveguide into the support member.

[0079] Further, the plasma source may be connected to a waveguide, that propagates e.g. microwaves to the plasma source.

[0080] Low .pressure .enclosure (Vacu

[0081] The vacuum chamber of the assembly of the present invention is a low- pressure enclosure. This low pressure is necessary to create a plasma, which is a gas that has been ionized by an electric or electromagnetic field. The vacuum chamber can also be equipped with a pumping system that is used to maintain the low pressure.

[0082] FIG. 2 shows a vacuum chamber 10, having a first wall 4, a second wall 5 opposite to the first wall 4, an opening 2 for the support member 7 and an opening 3 for the plasma source 6.

[0083] The vacuum chamber 10 of the present invention may be enclosed by walls that form a sealed and airtight enclosure. These walls can typically be made of materials that can withstand the pressure differentials and chemical environments associated with plasma deposition. Common materials may include stainless steel, aluminium, or other suitable alloys. Shown in FIG. 2 is a representation of an example of the vacuum chamber in accordance with the invention, where the vacuum chamber 10 has at least two vertical side walls: a first wall 4 and a second wall 5, where the second wall 5 is opposite to the first wall 4. Each of the first and the second walls of the vacuum chamber is provided with openings 2,3 configured to accommodate a support member 7 or a plasma source 6, where the linear plasma source 6 and the support member 7 are situated in separate opening within the first wall 4 and the second wall 5 of the vacuum chamber 10. There is a distinct spatial relationship between the opening 3 that accommodates the plasma source and the opening 2 that accommodate the support member within the first wall 4 and the second wall 5 of the vacuum chamber 10. Each opening 3 of the linear plasma source is aligned with the corresponding opening of the support member, and the openings have a spatial relationship with each other. The support member and the plasma source could be connected on one side to a splitter block, such as T-shaped splitter block, and on the other side to a rectangular return bar or a rectangular bridge. Further, the vacuum chamber 10 has a top wall and a bottom wall.

[0084] The top wall is positioned horizontally above the vertical walls, while the bottom wall is situated horizontally below them. In a preferred embodiment, the opening 2 for the support member 7 may have a diameter of between 80-100 mm, whereas the opening 3 for the plasma source may have a diameter of 120-140 mm.

[0085] The vacuum chamber is configured to allow plasma enhanced chemical vapour deposition. The vacuum chamber may optionally be configured to allow operation at reduced pressures (partial vacuum). Preferably, the reaction chamber is configured to allow operation at pressures of from 1-100 Pa, more preferably 1-10 Pa.

[0086] Support member and integrated waveguide

[0087] In the apparatus according to the invention, the vacuum chamber is reinforced and stabilized using at least one support member. The vacuum chamber may be reinforced and stabilized by a plurality of support members. Each support member is preferably made of a material that can withstand the pressure differential, and provides sufficient stabilization to the shell of the enclosure. Preferred materials may include metals or metal alloys typically employed in enclosures, in particular stainless steel. The support members may act as support structures, ensuring the structural integrity of the chamber under high pressure differential when operating under vacuum conditions. The support members in this setup not only may act as support structures but also serve as waveguides. Besides ensuring the structural integrity of the chamber under high pressure differentials during vacuum conditions, they can facilitate the transmission of microwave energy to the desired locations. Hence, these support members can play a dual role, contributing to both the mechanical stability and the efficient distribution of microwave energy within the system.

[0088] Each support member may comprises a body with a length L that defines a longitudinal axis 'X' and a waveguide incorporated in the body. Each support member, and its body respectively , may be aligned with the longitudinal axis of the vacuum chamber and connects the two opposite vertical walls of the vacuum chamber, more particularly extending between the first and the second walls of the vacuum chamber. Further, the body of the support member may be hollow and has an inner surface and an outer surface, and a first end and a second end, both of which are integral parts of the body, and the inner surface of the body can be coated with conductive materials, such as metal.

[0089] The body of the support member can exhibit diverse geometries, encompassing shapes like cylindrical or rectangular forms.

[0090] In a preferred embodiment as shown in FIG. 2, the support member 7 may comprise a cylindrical body with a circular cross-section and an inner diameter d2 and an outer diameter d3, where the difference between the outer and inner diameters gives the thickness of the cylindrical body’s wall.

[0091] The body of the support member comprises an internal lumen, i.e. cavity or cavity space, spanning the body and having an opening in fluid communication with the exterior of the vacuum chamber on each side of the respective wall (4,5 ) of the vacuum chamber (FIG. 2); The lumen is dimensioned and shaped to accommodate a waveguide connected to the plasma source. The body may be a cylindrical body with a circular crosssection.

[0092] The support member 7 can be inserted in the opening 2 of the first wall 4 and extends across the vacuum chamber 10, reaching the opening on the opposite second wall 5 of the vacuum chamber 10, ensuring support and structural integrity throughout the entire vacuum chamber 10, as shown in Fig. 2-3. Both ends may be securely attached to their respective openings through welding, ensuring vacuum tightness.

[0093] Furthermore, the body of the support member can be made of metal e.g. stainless steel, and alternatively can have a metal coating on the inner surface of its body, such as silver or copper, serving as a good microwave conductor. Alternatively, the support member's body can be constructed using clad materials, which involve the combination of two metal layers superimposed upon each other , such as, for example, stainless steel layer on the outside and aluminium layer on the inside.

[0094] As set out above, the vacuum chamber of the present invention is a sealed enclosure where a low-pressure environment is established for the deposition process. In this particular setup, the chamber is reinforced and stabilized using support members, which are typically made of a sturdy material like stainless steel. These support members 7, as shown in FIG. 2 and FIG. 3 can act as support structures, ensuring the structural integrity of the vacuum chamber under vacuum conditions.

[0095] The assembly of the present invention comprises at least one waveguide. The waveguide can have a hollow structure and can come invarious shapes. The waveguide components can be made of metal, such as copper or aluminium.

[0096] In a preferred embodiment, the waveguide is configured as an integral part of the support member, the waveguide being integrated into the internal lumen of the support member and extending along the longitudinal axis X between the two opposite walls of the vacuum chamber. The waveguide is preferably aligned parallel to the body.

[0097] In a preferred embodiment, the waveguide can be a coaxial waveguide with a circular cross-section that is used to guide and transmit electromagnetic waves, in particular microwaves or power signal from a microwave generator to the vacuum chamber or discharge region. In another embodiment, the waveguide is a rectangular waveguide with a rectangular cross-section and a where the body of the support member is a rectangular body. In another embodiment, the waveguides can have different shapes, for example rectangular, circular, coaxial, tapered, elliptical.

[0098] In an embodiment, the waveguide comprises an inner conductor and an outer conductor, where the outer conductor is positioned coaxially around the inner conductor, and wherein a space between the inner and the outer conductor is filled with a dielectric material, such as air for cooling.

[0099] Example embodiments of the invention are summarized here. Other embodiments can also be understood from the entirety of the specification as well as the claims filed herein.

[0100] The waveguide of the of the present invention allows the microwaves to propagate in its internal space and can comprise an inner conductor and an outer conductor, where the outer conductor may surround the inner conductor.

[0101] In a preferred embodiment, the inner conductor (i.e. an antenna) of the waveguide can be a metal rod with an axial length I and diameter d. The inner conductor of the waveguide can be massive and hollow, and carries the signal or power. The inner conductor may be cylindrical. The inner conductor may have an inner diameter (d / nn) and outer diameter (douf), where the difference between the outer diameter and the inner diameter defines the thickness of the wall of the inner conductor. The inner conductor can be selected from copper, metal alloy or plated metal. In a specific example of the present invention the inner conductor is made of copper. The antenna may be a linear antenna, splitantenna, and / or a non-linear antenna. Further, in a preferred embodiment the inner conductor can be a power split antenna.

[0102] In a preferred embodiment, the outer conductor of the waveguide can be made of metal, such as aluminium, steel, copper, or any metal or metal alloy and also plated metal. More preferably the outer conductor is a metal tube with a circular cross-section having a length L and a diameter D. The outer conductor of the waveguide has an inner diameter D / nnand outer diameter Douf. The difference between D / nnand Doufdefines the wall thickness.

[0103] The waveguide of the present invention is designed to minimize the attenuation of electromagnetic waves passing through it. Typically, the waveguides can be optimized for lowest attenuation by using a variety of techniques, such as using a material of high conductivity, or making the waveguide as small as possible, or filling the waveguide with dielectric material.

[0104] The problem of wave attenuation and loss of power along the coaxial waveguide has been minimized by using a spatial ratio between the diameters of the inner and outer conductors.In an embodiment, the waveguide may be a coaxial waveguide with an inner and outer conductor, where the ratio of the inner diameter of the outer conductor (D / nn) to the outer diameter of the inner conductor (douf) is selected to optimize the waveguide impedance and therefore minimize the attenuation of signal. For example, the ratio D / nn / dout can be between 3 and 4 and is considered to correspond to an optimal impedance.

[0105] Hence, the ratio of the inner diameter of the outer conductor to the outer diameter of the inner conductor is determined by an optimal impedance i.e. the impedance that minimizes signal reflections and maximizes power transfer. It is thus determined by the dimensions of the waveguide and the frequency of the signal.

[0106] The coaxial waveguide's dimensions, such as the specified ratio between the inner diameter of the outer conductor and the outer diameter of the inner conductor, can play a crucial role in efficiently guiding and transmitting the generated microwave signals with minimal attenuation.

[0107] FIG. 6 shows a preferred embodiment of coaxial waveguide 30 comprising inner conductor 31 and outer conductor 32. FIG. 6 shows the outer diameter (douf) of the inner conductor 31 and the inner diameter (D / nn) of the outer conductor 32.

[0108] FIG. 5A shows an exemplary cross-section of a support member that includes a body 43 and a coaxial waveguide. The body 43 can be made of stainless steel and can be coated on the inner surface facing the outer conductor with a metal coating to improve the conductivity of the inner surface of the body. The coaxial waveguide has an inner conductor 41 and an outer conductor 42. The outer conductor 42 has an inner diameter of D / nnand an outer diameter of Douf. The ratio of the inner diameter (D / nn) of the outer conductor 42 to the outer diameter (douf) of the inner conductor is optimized to minimize attenuation. The inner diameter of the body 43 is greater than the outer diameter (Douf) of the outer conductor 43. The body 43 is preferably coaxial with the outer conductor 42 of the waveguide.

[0109] In a preferred embodiment, as shown in FIG. 5(A,B) the support member may comprise a cylindrical body 43 made of stainless steel and connected to the wall 44 of the vacuum chamber, a copper inner conductor 41 and an aluminium outer conductor 42. Further, the outer diameter of the of the inner conductor can be preferably between 7-10 mm. The inner diameter of the outer conductor 42 can be between 21-40 mm, more preferably between 25-28 mm.

[0110] In an example, Fig. 5B shows a longitudinal section of the support member with a length L along an axis X, cylindrical body 43, inner conductor 41 of the waveguide and outer conductor 42 of the waveguide.

[0111] The space between the inner and the outer conductor of the waveguide may be filled with dielectric material, which in the present case could be air, where the air is used for cooling. Also, when a waveguide is filled with air, the energy that is lost due to dielectric losses is very low.

[0112] By integrating the waveguide into the support member, the structure gains additional strength and stability, as the waveguide acts as a load-bearing element. In preferred embodiment, the support member may have a cylindrical body that is coaxially positioned around the outer conductor of the waveguide, thus the waveguide can be inserted entirely into the cylindrical body of the support member as shown in FIG. 5(A,B).

[0113] Alternatively, the body of the support member can be formed of a cladded material, i.e. two layers attached to each other, such as an outer layer of stainless steel that forms the outer surface of the body, and an inner layer of metal , such as aluminium forming the inner surface of the body, where the twolayers are attached to each other and where the inner surface of the body acts as an outer conductor of the waveguide. Stainless steel is strong construction material, while aluminium is a good conductor of electricity. This combination of materials can help to reduce losses in the waveguide by preventing the electromagnetic waves from escaping through the walls of the support member. The support member formed of a cladding material may have a cylindrical body.

[0114] FIG. 4 (A,B) of a another preferred embodiment depicts single-tube coaxial waveguide concept, where the support member may comprise a body made of metal, such as steel and a waveguide, where the waveguide can have an inner and outer conductor. FIG. 4 (A,B) shows a support member 50 with an inner conductor 52 and a body 53. The inner surface of the body 53 can be coated with a conductive material, such that the inner surface of the body 53 becomes an outer conductor of the waveguide, forming this way the waveguide. The metal coating on the inner surface of the body 53 improves the conductivity of the inner surface and helps to dissipate the heat, which helps to protect the inner surface of the body from damage. The metal coating is also important because it helps to prevent the electromagnetic waves from escaping through the walls of the body. Alternatively, the body 53 can be made of two layers connected to each other. Fig. 4B shows a longitudinal section of the support member with a length L along an axis X connected to the wall 55, body 51 configured as an outer conductor of the waveguide and an inner conductor 52. In this case, the attachment of the steel body to the vacuum chamber wall 55 is done by welding.

[0115] FIG. 4 (A,B) of a preferred embodiment, shows a single tube coaxial waveguide concept, where the support member may have a body 51 made of steel, where the inner surface of the body 51 can be coated with a conductive metal such as Ag or Cu, and a waveguide, where the waveguide has only an inner conductor 52 and the inner surface of the steel body acts as an outer conductor of the waveguide. Alternatively, the body 51 can be formed of two layers of metal superposed one on top of another, where as an example, the metal forming the inner surface of the body 51 is aluminium, and the metal attached to the aluminium and forming the outer surface of the body 51 is stainless steel.

[0116] Hence, in an embodiment the cylindrical body of the support member is being formed of a cladding material comprising two layers attached to eachother, where an outer layer forming an outer surface of the support member is made of stainless steel, while an inner layer forming an inner surface of the support member is made of aluminium. Stainless steel provides constructive integrity because of its high strength, corrosion resistance, and weldability, while aluminium is a good conductor of electricity and a good reflector of electromagnetic waves and therefore can be positioned on the inner surface of the cylindrical body . This combination of materials helps to reduce losses in the waveguide by preventing the electromagnetic waves from escaping through the walls of the support member. The inner conductor made of metal can be placed in the internal lumen of the support member and extending along an axis (X) between the two opposite walls of the vacuum chamber, and where the inner surface of the cylindrical body may be configured to serve as an outer conductor, wherein the inner conductor and the outer conductor form the waveguide.

[0117] The integration of the waveguide into the support member provides multiple benefits, including enhanced mounting support and reinforcement for the vacuum chamber, as well as creating a dedicated pathway for the microwave guide. This approach maximizes the utilization of the available space and provides a compact and robust solution, it simplifies the installation and maintenance processes. The support member surrounding the waveguide may provide protection and shielding against external environmental factors.

[0118] The waveguide as described above may be inserted into the cylindrical body of the support member forming this way a structure that has a reinforcing function and at the same time serves as a waveguide.

[0119] The assembly of the present invention can guide the microwave power signal into the antenna of the linear plasma source using the integrated microwave waveguide. The antenna can be a linear antenna. Preferably, the linear antennas have a length equal to the width of the reaction chamber. Suitable linear antennas include solid and hollow cylinders with a radius in the range of from 1 to 20 mm, more preferably of from 5 to 12 mm, most preferably of from 7 to 9 mm. Suitable linear antennas are made from conductive material, preferably metal, more preferably copper.

[0120] The splitter block can be used for splitting microwaves and a single microwave generator, such as magnetron is connected to the splitter block.

[0121] Plasma source

[0122] In a preferred embodiment, the plasma source 6 as shown in FIG. 2 of the present invention is suitable for creating large-area plasmas.

[0123] The plasma source 6, can be a linear plasma source, and is positioned between the first 4 and the second 5 walls of the vacuum chamber 10, has an elongated body with cylindrical shape, where the elongated body has a first and a second end. The linear plasma source comprises a rodshaped antenna, such as metal rod and a dielectric tube positioned coaxially around the antenna, where the dielectric tube can be made of quartz. The dielectric tube is also referred to as co-axial shielding element. The rod-shaped antenna and the dielectric tube may form a primary inner conductor. The outer conductor may be formed by the plasma.

[0124] The antenna sections may be provided as a single metal rod, or may be provided as more complicated serpentine types, comb / double-comb types, U-shaped types. By way of non-limiting example, suitable metals from which the antenna may be made may be selected from copper, aluminium, silver, alloys thereof or any other metal or metal alloy with sufficient electrical conductivity at high frequencies. Alternative geometries can be considered.

[0125] The dielectric tube disclosed must be able to withstand extended periods at the high temperatures that plasma generation entails. Materials typically used may possess a melting point above 1000 °C, such as quartz, which has a melting point of approximately 1650 °C, or AI2O3, which has a melting point of approximately 2072eC.

[0126] The combination of rod-shaped antenna and dielectric tube is often referred to as an inner conductor. The primary outer conductor may be formed by the plasma generated outside of the dielectric tube. Thus, the plasma generated by the plasma source may act as a conductor. By way of nonlimiting example, suitable metals from which the antenna may be made may be selected from copper, aluminium, silver, alloys thereof or any other metal or metal alloy with sufficient electrical conductivity. Alternative geometries can be considered.

[0127] In a preferred embodiment, the plasma source is connected solely to a single microwave generator.

[0128] Single microwave generator and a waveguide system

[0129] Another crucial aspect of the present invention is the use of a single microwave generator per one plasma source.

[0130] Accordingly, the assembly for depositing a film on a surface of a substrate can comprise a single microwave generator per plasma source and a waveguide system. In this arrangement, the radiation from the microwave generator can be split into two waves-one to a waveguide and one directly to first end of the plasma source, where both the waveguide and the plasma source are components of the waveguide system. The wave may propagate through the waveguide to a rectangular return bar that serves as a rectangular waveguide, where the energy from the rectangular waveguide is directed to the second end of the plasma source.

[0131] In an embodiment, the power supply system is may be a microwave generator connected to the plasma source 12. The microwave generator can emit electromagnetic waves at a specific frequency, typically in the gigahertz range. These microwaves are guided into the vacuum chamber 10 through the waveguide, directing the plasma generation process.

[0132] In another aspect, the present invention relates to the use of a single microwave generator per plasma source, where the plasma source 12 can be a linear plasma source.

[0133] In a preferred embodiment, the plasma source may have a first end and a second end.

[0134] A splitter block could be used to split the microwaves coming from the microwave generator into two parts, providing radiation to both ends of the plasma source with only one microwave generator.

[0135] By way of non-limiting example, the device of the present invention may have a single microwave generator 14, such as magnetron, to transmit microwaves via a splitter block 18, or simply referred to as splitter, where the splitter block divides the microwave power into two separate paths or waveguides.

[0136] In a preferred embodiment, FIG. 1 shows the assembly 1 , a vacuum chamber 10, plasma source 12 for generating plasma 13 comprising an antenna 11 and a quartz tube 12b, a first coaxial waveguide 15, a second coaxial waveguide 12a, formed by the plasma source and the plasma 13; rectangular return bar 19 for propagating waves from the first coaxial waveguide to the second coaxial waveguide 12a; inner conductor 17 of the firstcoaxial waveguide 15. Transition sections 16,20; a splitter block connected to the microwave generator 14, for splitting the microwaves between the first and the second coaxial waveguides.

[0137] The splitter block ensures equal or controlled power distribution to the linear plasma source and distribution of microwave power from a single microwave source to multiple waveguides.

[0138] The waveguide may have first and second ends, and might be connected to the plasma source via a waveguide system, such that the waveguide and the plasma source are integrated into a single waveguide system, wherein the waveguide system is being configured to distribute microwave power to the first and the second end of the plasma source.

[0139] The plasma source may comprise an antenna, a dielectric layer circumferentially surrounding the antenna and a primary outer conductor, wherein the primary outer conductor is formed by the generated plasma, and wherein the antenna, the dielectric layer, and the primary outer conductor form a second coaxial waveguide as a part of the waveguide system.

[0140] The support member along with its integrated waveguide may form a first coaxial waveguide as a part of the waveguide system.

[0141] In an embodiment, as shown in FIG. 1 , the assembly 1 comprises a waveguide system, where the waveguide system may comprise: a splitter block 18 being connected to a single microwave generator 14, a rectangular return bar 19, a first coaxial waveguide 15 having a first end and a second end, the first coaxial waveguide being formed by the support member having a waveguide integrated into the support member’s body, and a second coaxial waveguide 12a having a first end and a second end, where each of the first and second coaxial waveguides are connected with their respective first ends to the splitter block 18 and where the first and the second coaxial waveguides are connected with their respective second ends to the rectangular return bar 19. The plasma generated around the plasma source may form a primary outer conductor.

[0142] The plasma source may have a first end and a second end and may comprise an antenna 11 , a dielectric layer 12 circumferentially surrounding the antenna 11 , where the antenna 11 and the dielectric layer 12 may form a primary inner conductor. The primary outer conductor may be formed by the generated plasma 13 around the linear plasma source 12. The primary innerconductor and the primary outer conductor may form the second coaxial waveguide. The dielectric layer 12b could be made of a quartz tube.

[0143] In a preferred embodiment, the waveguide system as shown in FIG. 1 may comprise a splitter block 18, such as a T-shaped splitter block that is connected to the coaxial waveguide 15 integrated into the support member and to the plasma source 12, and a rectangular waveguide. This rectangular waveguide acts as the input to the microwave division process. The process begins with the input of microwave energy into the rectangular waveguide. This energy is typically generated by a single microwave source such as a magnetron. The rectangular waveguide of the splitter block may incorporate two mode converters for the transition from rectangular waveguide to the two coaxial waveguides. Mode converters are used to transform the waveguide mode, ensuring efficient coupling of microwave energy between different waveguide types. Inside the rectangular waveguide of the splitter block there are waveguide junctions and dividers designed to split the microwave power into two separate paths.

[0144] Preferably, the rectangular return bar may be a rectangular waveguide that distributes the microwave power from the support member with integrated coaxial waveguide to the second end of the plasma source. Since the first end of the plasma source may be connected to the splitter block, it receives power input from its rectangular waveguide directly.

[0145] This combination of features ensures propagation of the microwave energy from a single microwave source through the waveguide and to the antenna of the linear plasma source. This provides the advantage that the thermal energy provided by the antenna to the plasma source is substantially uniform along the length of the antenna. This results in an apparatus capable of depositing thin layers to a large surface area substrates uniformly along the axis of the antenna .

[0146] The transition from the rectangular waveguide to coaxial waveguides and vice versa may be made by mode converters.

[0147] Each waveguide must be perfectly matched on at least one end such that no reflection occurs.

[0148] The design of the waveguide system and its components, such as the rectangular waveguide of the splitter block and mode converters, may be suchas to achieve a proper impedance matching. Further, an impedance tuner might be utilized to optimize the impedance of the complete waveguide system.

[0149] FIG. 7 shows an example of a waveguide system, where the waveguide system may comprise a T-shaped splitter block 18, a rectangular return bar 19, a first coaxial waveguide 15, a second coaxial waveguide 12, a first connection 21 of the first end of the first transition section of the T-shaped splitter block 18, a second connection 23 of the second end of the coaxial waveguide to the first transition section of the rectangular return bar 19, a third connection 22 of the first end of the second coaxial waveguide 12 to the second transition section of the T-shaped splitter block 18 and a fourth connection 24 of the second end of the second coaxial waveguide 12 to the second transition section of the rectangular return bar 19. The T-shaped splitter block 18 comprises two mode converters 25, and the rectangular return bar 19 comprises also two mode converters 25.

[0150] Each converter 25 converts from TE (Transverse Electric) field in the rectangular waveguide to TEM (Transverse Electromagnetic) field. TEM fields are type of field that can propagate through a coaxial waveguide.

[0151] The mode converters in the splitter block and the return bar can be configured to transform the waveguide mode to ensure efficient coupling of the microwave energy between the first and the second waveguides and the splitter block.

[0152] The splitter block and return bar enable the distribution and management of microwave power.

[0153] Substrate holder

[0154] Inside the vacuum chamber, there is a substrate holder, where the substrate to be coated is placed. The substrate holder is designed to securely hold the substrate in place during the deposition process. Additionally, it may have the capability to heat the substrate to elevated temperatures, promoting better film formation.

[0155] The substrates in question may be of various types, such as glass, steel, copper foils, ceramics, aluminium foils, organic polymers, and thermoplastics. For most industrial applications deposition of a film of homogeneous depth onto a substrate is desirable, especially for continuous processes.

[0156] In summary, the vacuum chamber of a PECVD apparatus, stabilized with hollow members and equipped with a microwave plasma source, provides a controlled environment for the successful deposition of thin films onto substrates using plasma-enhanced chemical vapor deposition techniques. The support members add structural support and may also serve as gas channels for controlled gas distribution within the chamber.

Claims

CLAIMS1 . An assembly for depositing a film on a surface of a substrate, the assembly comprising:(a) a low-pressure enclosure comprising walls, and being configured to maintain a low-pressure environment during the deposition process;(b) at least one plasma source configured to generate a plasma within the low-pressure enclosure, wherein the plasma is utilized for a chemical vapour deposition process;(c) a power supply system connected to the plasma source, configured to provide electrical energy for plasma generation;(d) a waveguide system configured to guide the energy released by the power supply system to the plasma source;(e) a substrate holder configured to support a substrate to be coated, the substrate holder being positioned within the low-pressure enclosure;(f) a coating precursor material inlet system comprising one or more fluid inlets configured to introduce precursor components into the low-pressure enclosure;(g) an exhaust system comprising one or more exhaust ports configured to remove residual precursor components and by-products from the low- pressure enclosure; and(h) at least one support member connected to and extending between at least two opposing walls of the enclosure, the support member being configured to stabilize the enclosure walls against deformation under a pressure differential between the exterior and interior of the low-pressure enclosure.

2. The assembly according to claim 1 , wherein the support member comprises a body and a waveguide, the body having an internal lumen spanning the support member and having an opening in fluid communication with the exterior of the chamber on each side of the respective wall, wherein the body of the support member surrounds the waveguide, the waveguide being integrated into the internal lumen of the body.

3. The assembly according to any one of claims 1 to 2, wherein the power supply system is a microwave generator for generating a microwave power signal.

4. The assembly according to anyone of any one of claims 2 to 3, wherein the waveguide is a coaxial waveguide with a circular cross-section.

5. The assembly according to claim 2, wherein the waveguide is a rectangular waveguide with a rectangular cross-section and a where the body of the support member is a rectangular body.

6. The assembly according to any one of claim 2 or 3 or 4, wherein the waveguide comprises an inner conductor and an outer conductor, where the outer conductor is positioned coaxially around the inner conductor, and wherein a space between the inner and the outer conductor is filled with dielectric material.

7. The assembly according to Claim 6 , wherein the inner conductor of the waveguide defines an inner and an outer diameter, and the outer conductor of the waveguide defines an inner and an outer diameter, wherein the ratio of the inner diameter of the outer conductor to the outer diameter of the inner conductor is determined by an optimal impedance.

8. The assembly according to claim 7, wherein the body of the support member circumferentially surrounds the outer conductor of the waveguide.

9. The assembly according to claim 8, wherein the body of the support member is a cylindrical body with an inner and outer surface, the body having a circular cross-section, being formed of metal.

10. The assembly according to claim 9, wherein the body of the support member is being formed of a cladded material comprising a first and a second layer attached to each other, where each layer is made of a different metal.11 . The assembly according to claim 10, wherein the first layer is made of stainless steel and the second layer is made of aluminium.

12. The assembly according to claim 9, wherein the inner surface of the body of the support member is coated with a conductive material, such as metal, the inner surface being configured as an outer conductor of the waveguide.

13. The assembly according to claim 12, wherein the inner conductor of the coaxial waveguide is being positioned inside the body of the support member, such that the inner surface of the body of the support member and the inner conductor of the waveguide form the waveguide.

14. The assembly according to claim 11 or 13, wherein the inner conductor of the waveguide is an antenna.

15. The assembly according to any one of claims 12 to 14, wherein the plasma source has a first and a second end, and wherein the plasma source is connected solely to a single microwave generator.

16. The assembly according to claim 15, wherein the plasma source is a linear plasma source having a first end and a second end, the plasma source comprising an inner conductor, a dielectric layer circumferentially surrounding the inner conductor, and an outer conductor, the outer conductor being formed by generated plasma.

17. The assembly according to claim 16, wherein the waveguide has first and second ends, and is connected to the plasma source via the waveguide system, such that the waveguide and the plasma source are integrated into the waveguide system, wherein the waveguide system is being configured to distribute microwave power to the first and the second end of the plasma source.

18. The assembly according to claim 17, wherein the plasma source comprise an antenna, a dielectric layer circumferentially surrounding the antenna and a primary outer conductor, wherein the primary outer conductor is formed by thegenerated plasma, and wherein the antenna, the dielectric layer, and the primary outer conductor form a second coaxial waveguide as a part of the waveguide system.

19. The assembly according to claim 18, wherein the support member forms a first coaxial waveguide as a part of the waveguide system.

20. The assembly according to claim 19, wherein the waveguide system comprises:(a) a splitter block being connected to a single microwave generator,(b) a rectangular return bar,(c) the first coaxial waveguide having a first end and a second end, and(d) the second coaxial waveguide having a first end and a second end,(e) where each of the first and second coaxial waveguides are connected with their respective first ends to the splitter block and where the first and the second coaxial waveguides are connected with their respective second ends to the rectangular return bar.21 . The assembly according to any one of claim 1 or 20 , wherein the linear plasma source assembly for plasma enhanced chemical vapour deposition comprises:(a) a linear plasma source with a first end and a second end comprising an antenna and an co-axial shielding element; and(b) at least one set of gas manifolds, each set comprising(i) at least one first gas conduit(s) provided with at least one first gas outlet port for providing one or more first gaseous substances to a chemical vapour deposition chamber;(ii) at least one exhaust gas conduit(s) each provided with one or more exhaust gas inlet port(s) for removing one or more exhaust gaseous substances from a chemical vapour deposition chamber.

22. The assembly according to claim 21 , wherein the at least one set of gas manifolds additionally comprises at least one second gas conduit(s) provided with at least two gas outlet ports or at least two second gas conduits providedwith at least one gas outlet port for providing one or more second gaseous substances to a chemical vapour deposition chamber.

23. The assembly according to any one of claim 1 or 22 , wherein the assembly additionally comprises a plurality of plasma confinement magnets.

24. The assembly according to any one of claim 1 or 23, additionally comprising:(i) means for providing a substrate to the process chamber;(ii) means for providing a first gas to the chemical vapour source assembly;(iii) means for providing a second gas to the chemical vapour source assembly; and(iv) means for removing an exhaust gas from the chemical vapour source assembly.

25. The assembly according to claim 24, wherein the means for providing substrate being configured to move the substrate past the linear plasma source assembly.

26. A method for treating a surface of a substrate, the method comprising:(a) providing an assembly according to any one of claim 1 or 25;(b) generating a microwave power signal using the microwave generator;(c) guiding the microwave power signal into the antenna using the microwave waveguide;(d) generating a plasma around the antenna using the microwave power signal;(e) creating an at least one plasma species using the plasma; and(f) using the at least one plasma species created by the plasma to treat a surface of a substrate.

27. A method for coating a substrate comprising the following steps:(a) providing a substrate to a chemical vapour deposition chamber comprising an assembly according to any of claim 1 or 21 ;(b) providing energy to the linear plasma source;(c) providing a first gas and second gas to the linear plasma source assembly;(d) providing a first substrate past a first side of the linear plasma source assembly to apply a first coating on a first surface of the substrate;(e) passing the first substrate past a second side of the linear plasma source assembly to apply a second coating on the substrate, wherein the first gas comprises a carrier gas and a reactant gas, the second gas comprises a precursor gas.

28. The method according to claim 27, wherein step b) comprises the provision of microwave energy to the linear plasma source assembly.

29. The method according to claim 27, wherein the substrate comprises copper, titanium, nickel, stainless steel, aluminium or polymer film, preferably wherein the substrate is selected from a cladded foil or laminated foil comprising copper, titanium, nickel, stainless steel, aluminium or polymer film.

30. The method according to any one of claims 27 or 29, comprising depositing one or more of silicon, silicon nitride, silicon carbide or silica.

31. The method according to any one of claims 27 or 30 , comprising depositing coatings onto a conductive substrate to form an anode material, preferably depositing silicon onto a copper substrate.

32. The method according to any one of claims 27 or 31 , for preparing anode materials by depositing silicon onto a conductive substrate.

33. A low-pressure enclosure for an assembly for depositing a film on a surface of a substrate according to Claim 1 comprising a first and second wall, and at least one support member being connected to and extending between the first and the second wall of the low-pressure enclosure, the support member being configured to stabilize the enclosure first and second walls against deformation under a pressure differential between the exterior and interior of the low- pressure enclosure, wherein the support member comprises a body and a waveguide, the body having an internal lumen spanning the support memberand having an opening in fluid communication with the exterior of the chamber on each side of the respective wall, wherein the body of the support member surrounds the waveguide being integrated into the internal lumen of the body.

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