Vapor deposition device

Abstract

The present invention provides a vapor deposition device, comprising: a reaction chamber; a gas injection mechanism, located at the top of the reaction chamber; a susceptor, disposed the reaction chamber, a reaction zone being formed above the susceptor; a rotating shaft, connected to the susceptor; a shielding member, positioned in the reaction chamber and surrounding an inner wall of the reaction chamber, the shielding member comprising an isolation wall near the reaction zone, the isolation wall and the gas injection mechanism forming an enclosed spatial region that covers the reaction zone, a radial dimension of the spatial region gradually increasing from top to bottom, and an outer diameter of the lowest end of the shielding member matching an inner diameter of the reaction chamber; purge channels, distributed on the isolation wall, passing through the isolation wall and in communication with the spatial region, so as to allow a purge gas to be introduced into the spatial region. The vapor deposition device provided by the present invention can improve the production efficiency and quality of materials grown by the device, and extend the maintenance cycle of the reaction chamber.

Description

A vapor deposition device Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a vapor deposition device. Background Art

[0002] Vapor deposition of semiconductor thin films onto semiconductor wafers is a crucial component of the semiconductor manufacturing process. Typical vapor deposition equipment includes chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced CVD, and metal-organic chemical vapor deposition (MOCVD). These systems are commercially used to manufacture solid-state (semiconductor) microelectronics, optical and optoelectronic devices, and other electronic / optoelectronic materials and devices.

[0003] Typically, during the vapor deposition process, a carrier plate is provided in the reaction chamber, and the wafers are placed on the carrier plate. The process gas is introduced into the reaction chamber through an air inlet device (such as a shower head) and transported to the surface of one or more wafers placed on the carrier plate for processing, thereby growing a thin film with a specific crystal structure. At the same time, in order to achieve uniform deposition, the carrier plate rotates at high speed driven by the rotating shaft. Since the carrier plate drags the gas to rotate, air flow vortices are easily generated near the side wall of the reaction zone (that is, the direction of gas flow near the edge of the carrier plate), especially when the carrier plate rotates at a high speed (rotation speed ≥ 200RPM).

[0004] When there is a certain amount of gas vortex, the inner wall of the reaction chamber will have a relatively serious deposition of reaction byproducts (coating). Even in the absence of gas vortex, due to the diffusion of reactants, a small amount of reaction byproducts may also be deposited on the inner wall of the reaction chamber. These reaction byproducts will cause the following problems:

[0005] 1. The presence of reaction by-products will become the source of particle defects during the material growth process, thereby reducing the yield of the grown material.

[0006] 2. The reaction by-products are generally polycrystalline or amorphous solids. As the growth proceeds, the reflectivity of the side walls of the reaction zone will gradually change, affecting the temperature field stability of the reaction zone.

[0007] 3. The generation and accumulation of reaction by-products also forces an increase in the frequency of cleaning and maintenance of the reaction chamber, reducing the effective growth capacity of the reaction chamber and thus increasing the cost of use.

[0008] Summary of the Invention

[0009] The object of the present invention is to provide a vapor deposition device that can improve the output efficiency and quality of the material grown by the device and extend the maintenance period of the reaction chamber.

[0010] To achieve the above object, the present invention provides a vapor deposition apparatus comprising:

[0011] reaction chamber;

[0012] a gas injection mechanism, located at the top of the reaction chamber;

[0013] A carrier plate is located in the reaction chamber and is arranged opposite to the gas injection mechanism, forming a reaction zone above the carrier plate;

[0014] a rotating shaft connected to the carrier plate and driving the carrier plate to rotate during vapor deposition;

[0015] a shielding member located in the reaction chamber and arranged around the inner wall of the reaction chamber, the shielding member including a partition wall adjacent to the reaction zone, the partition wall and the gas injection mechanism adaptively enclosing a spatial region, the spatial region covering the reaction zone, the radial dimension of the spatial region gradually increasing from top to bottom, and the outer diameter of the lowermost end of the shielding member being adapted to the inner diameter of the reaction chamber;

[0016] The purge channels are distributed on the partition wall, and the purge channels penetrate the partition wall and communicate with the space area so as to introduce purge gas into the space area.

[0017] The beneficial effect of the vapor deposition equipment provided by the present invention is that: by adding a shielding member on the inner side of the reaction chamber, the shielding member and the gas injection mechanism are adaptively arranged to enclose a spatial area with gradually increasing radial dimensions and covering the reaction zone, and a purge channel is provided on the shielding member to play a purge role. Compared with the vapor deposition equipment without the shielding member, the shielding member can replace the inner side wall of the reaction chamber to be exposed in the reaction zone, thereby protecting the inner side wall of the reaction chamber, and its purge function can effectively inhibit or improve the deposition of reaction by-products on the shielding member, thereby improving the output efficiency and quality of the equipment's growth materials, extending the service life of the shielding member, and thus extending the maintenance cycle of the reaction chamber.

[0018] In some embodiments, the purge channel includes a vertical purge gas flow channel, the center line of which is parallel to the axis of the rotating shaft, so that the gas flow velocity of the purge gas introduced into the spatial region includes only an axial component.

[0019] In some embodiments, the purge channel also includes a rotating purge airflow channel, which is inclined along the circumferential direction at an angle β and penetrates the isolation wall, so that the airflow velocity of the purge gas introduced into the spatial area includes an axial component and a tangential component, thereby forming a rotating purge airflow. The rotating purge airflow channel is arranged along the circumferential direction on the isolation wall so that the rotation direction of the rotating purge airflow is the same as the rotation direction of the rotating axis.

[0020] In some embodiments, the angle β of the rotating purge air flow channel located at the bottom layer of the isolation wall is greater than or equal to the angle β of the rotating purge air flow channel located at the top layer of the isolation wall, or the angle β of the rotating purge air flow channel gradually increases from top to bottom along the isolation wall.

[0021] In some embodiments, the rotary purge air flow channel is located in a circumferential area of ​​the shielding member close to the carrier plate.

[0022] In some embodiments, the isolation wall includes a first side surface close to the inner side wall of the reaction chamber and a second side surface away from the inner side wall of the reaction chamber, the purge channel extends from the first side surface to the second side surface but does not extend beyond the second side surface, and the inner diameter of the gas outlet formed by the purge channel on the second side surface is greater than or equal to the inner diameter of the gas inlet formed by the purge channel on the first side surface.

[0023] In some embodiments, the shielding member surrounds the carrier plate, and the distribution range of the purge channel on the isolation wall satisfies: the purge gas outlet surface formed by the purge channel located at the lower end of the isolation wall is not higher than the carrying surface of the carrier plate.

[0024] In some embodiments, the distribution range of the purge channel on the isolation wall also covers at least a portion of the area from the gas injection mechanism to the carrying surface of the carrying plate.

[0025] In some embodiments, the shielding member includes an annular cavity, which includes an outer wall close to the inner wall of the reaction chamber and an inner wall close to the reaction zone. The inner wall of the annular cavity is formed as the isolation wall, and the outer wall of the annular cavity is adapted to the inner wall of the reaction chamber. A purge gas inlet is provided on the annular cavity, and the annular cavity is connected to the purge channel.

[0026] In some embodiments, at least one barrier is provided on the shielding member, and the barrier is located in the annular cavity. The barrier divides the annular cavity into several sub-annular cavities, and the purge gas delivered by at least two of the sub-annular cavities is independently regulated.

[0027] In some embodiments, the barrier is a cylinder coaxial with the outer wall of the annular cavity, the upper end of the barrier abuts the inner top wall of the annular cavity, and the lower end of the barrier abuts the isolation wall; or, the barrier is an annular plate parallel to the top of the annular cavity, the outer edge of the barrier abuts the outer wall of the annular cavity, and the inner edge of the barrier abuts the isolation wall.

[0028] In some embodiments, the flow rate of the purge gas delivered in each of the sub-annular cavities is equal, or the flow rate of the purge gas delivered in each of the sub-annular cavities gradually increases from the inner to the outer.

[0029] In some embodiments, the average molecular weight of the purge gas delivered in each of the sub-annular cavities is equal, or the average molecular weight of the purge gas delivered in each of the sub-annular cavities gradually increases from the inner to the outer sides.

[0030] In some embodiments, the gas injection mechanism includes a first gas injection mechanism and a second gas injection mechanism, the first gas injection mechanism is located in the middle area of ​​the top of the reaction chamber, and is used to inject reaction gas into the reaction chamber; the second gas injection mechanism is located in the outer area of ​​the top of the reaction chamber and is arranged around the first gas injection mechanism, the annular cavity is located below the second gas injection mechanism, the purge gas inlet is located at the top of the annular cavity, the outlet of the second gas injection mechanism is abutted and connected to the purge gas inlet, and is used to transport purge gas to the annular cavity, and the purge gas enters the annular cavity and is introduced into the space area through the purge channel.

[0031] In some embodiments, the side wall of the reaction chamber is provided with an opening, which is used to place or remove the carrier plate. The lifting mechanism is located on the top wall or bottom wall of the reaction chamber. The lifting mechanism is connected to the shielding member, and the lifting mechanism drives the shielding member to move up and down along the axial direction of the rotating shaft so that the shielding member covers the opening or exposes the opening.

[0032] In some embodiments, when it is necessary to put in or take out the carrier plate, the lifting mechanism drives the shielding member to move downward along the axial direction of the rotating shaft to expose the opening; when it is necessary to perform vapor deposition in the reaction chamber, the lifting mechanism drives the shielding member to move upward along the axial direction of the rotating shaft to make the gas outlet of the second gas injection mechanism abut and connect with the purge gas inlet, and the opening is blocked by the shielding member.

[0033] In some embodiments, the top end of the annular cavity matches the second gas injection mechanism.

[0034] In some embodiments, a gas outlet surface of the first gas injection mechanism is flush with a gas outlet surface of the second gas injection mechanism.

[0035] In some embodiments, the isolation wall includes a straight cylindrical portion with a uniform radial dimension at the upper end and a trumpet portion with a radial dimension gradually increasing from top to bottom at the lower end.

[0036] In some embodiments, the outlet surface of the second gas injection mechanism is higher than the outlet surface of the first gas injection mechanism, so that there is an upwardly concave step between the outlet surface of the second gas injection mechanism and the outlet surface of the first gas injection mechanism. When vapor deposition is performed in the reaction chamber, the straight cylindrical portion is adaptively inserted into the upwardly concave step.

[0037] In some embodiments, the purge channels are circumferentially distributed on the partition wall, and form multiple layers of the purge channels along the axial direction of the rotating shaft.

[0038] In some embodiments, the inner diameters of the purge channels in each layer are the same, or the inner diameters of the purge channels in each layer gradually increase from the top of the reaction chamber to the carrier plate.

[0039] In some embodiments, the number of the purge channels in each layer is the same, or, from the top of the reaction chamber to the carrier plate, the number of the purge channels in the bottom layer is a multiple of the number of the purge channels in the top layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG1 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention;

[0041] FIG2 is a schematic diagram of the three-dimensional structure of a shielding member in an embodiment provided by the present invention from an oblique top view;

[0042] FIG3 is a schematic diagram of the three-dimensional structure of another shielding member in an embodiment provided by the present invention, viewed from an oblique top perspective;

[0043] FIG4 is a cross-sectional view of another shielding member along its axial direction in an embodiment provided by the present invention;

[0044] Figure 5 is an enlarged view of point A in Figure 4;

[0045] FIG6 is a schematic cross-sectional view of another vapor deposition apparatus according to an embodiment of the present invention;

[0046] FIG7 is a schematic diagram of the three-dimensional structure of another shielding member in an embodiment provided by the present invention, viewed from an oblique top perspective;

[0047] FIG8 is a schematic cross-sectional view of the vapor deposition apparatus according to an embodiment of the present invention when the opening of the reaction chamber is closed;

[0048] FIG9 is a schematic cross-sectional view of another vapor deposition apparatus according to an embodiment of the present invention;

[0049] FIG10 is a schematic diagram of the three-dimensional structure of another shielding member in an embodiment provided by the present invention, viewed from an oblique top perspective;

[0050] FIG11 is an enlarged view of point B in FIG10 ;

[0051] FIG12 is a schematic diagram of a three-dimensional structure of a shielding member provided with a blocking member in an embodiment of the present invention, viewed from an oblique top view;

[0052] FIG13 is a schematic diagram of a three-dimensional structure of another shielding member provided with a blocking member according to an embodiment of the present invention, viewed from an oblique top view;

[0053] FIG14 is a schematic diagram of the cross-sectional structure of the vapor deposition equipment according to an embodiment of the present invention when the opening of the reaction chamber is opened. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0055] Example 1

[0056] FIG1 is a schematic cross-sectional view of a vapor deposition device according to an embodiment of the present invention.

[0057] Referring to FIG1 , a vapor deposition apparatus provided in this embodiment includes a reaction chamber 1, a gas injection mechanism 2, a carrier plate 3, a rotating shaft 4, and a shielding member 5. The vapor deposition apparatus may be, for example, a chemical vapor deposition apparatus, a physical vapor deposition apparatus, a plasma-enhanced vapor deposition apparatus, a metal organic chemical vapor deposition (MOCVD) apparatus, or the like. The cross-section of the reaction chamber 1 is generally circular or quasi-circular. The gas injection mechanism 2 is located at the top of the reaction chamber 1 and is used to deliver reaction gas into the reaction chamber 1. The carrier plate 3 is disposed in the reaction chamber 1, and the gas injection mechanism 2 is disposed opposite the carrier plate 3, forming a reaction zone 6 above the carrier plate 3. The rotating shaft 4 is connected to the carrier plate 3 and is used to drive the carrier plate 3 to rotate during vapor deposition. The shielding member 5 is located in the reaction chamber 1 and is disposed around the inner sidewall of the reaction chamber 1. In this case, the shielding member 5 replaces the inner sidewall of the reaction chamber 1 and is exposed in the reaction zone 6. The shielding member 5 includes a partition wall 52 adjacent to the reaction zone 6. The partition wall 52 and the gas injection mechanism 2 are adapted to enclose a spatial region covering the reaction zone 6. The radial dimension of the spatial region gradually increases from top to bottom, and the outer diameter of the lowermost end of the shielding member 5 is adapted to the inner diameter of the reaction chamber 1. Most importantly, a plurality of purge channels 51 are spaced apart on the partition wall 52. These purge channels 51 penetrate the partition wall 52 and communicate with the spatial region to introduce purge gas into the spatial region.

[0058] In this embodiment, by adding the shielding member 5 on the inner side of the reaction chamber 1, the shielding member 5 and the gas injection mechanism 2 are adaptively arranged to enclose a spatial area with gradually increasing radial dimensions and covering the reaction zone 6, and the purge channel 51 is provided on the shielding member 5, and the purge gas flows into the reaction chamber 1 through the purge channel 51 to play a purge role. Compared with the vapor deposition equipment without the shielding member 5, the shielding member 5 can replace the inner wall of the reaction chamber 1 to be exposed in the reaction zone, thereby protecting the inner wall of the reaction chamber 1, and its purge function can effectively inhibit or improve the deposition of reaction by-products on the shielding member 5, thereby improving the output efficiency and quality of the equipment's growth materials, extending the service life of the shielding member 5, and thus extending the maintenance cycle of the reaction chamber 1.

[0059] In this embodiment, the thickness of the partition wall 52 is greater than 5 mm, so that the purge channel 51 formed on the partition wall 52 can have a certain length, which can guide the purge gas flowing into the space area.

[0060] In this embodiment, the portion of the partition wall 52 located in the spatial region is roughly configured as a trumpet-shaped structure that is smaller at the top and larger at the bottom. The portion of the partition wall 52 located in the spatial region can be configured as an inclined surface, an arc surface, a curved surface, multiple inclined surfaces with different inclination angles, a combination of an inclined surface and an arc surface, or a combination of an inclined surface and a curved surface. The shielding member 5 uses partition walls 52 of different shapes to more precisely match the distribution of the purge gas in the spatial region to the size ratio, process, and airflow conditions of the reaction chamber 1, further improving the airflow stability within the reaction chamber 1.

[0061] In some embodiments, the line connecting the two endpoints of the axial cross-section of the portion of the partition wall 52 located in the spatial region (such as the CD segment shown in FIG1 ) forms an angle α with the axis of the rotating shaft 4, where α satisfies: 0° < a ≤ 45°. This makes the portion of the partition wall 52 located in the spatial region substantially inclined, allowing the purge channel 51 on the partition wall 52 to have a certain degree of directionality, thereby imparting a certain degree of directionality to the flow velocity of the purge gas. The magnitude of angle α is determined by coupling the height H of the reaction zone 6, the size L of the gas injection mechanism 2, and the vapor deposition process conditions (such as temperature, pressure, gas flow rate, rotation speed, etc.).

[0062] In this embodiment, the isolation wall 52 includes a first side surface 521 proximal to the inner sidewall of the reaction chamber 1 and a second side surface 522 distal to the inner sidewall of the reaction chamber 1. The second side surface 522 is also the inner sidewall of the shielding member 5. In this case, the inner sidewall of the shielding member 5 replaces the inner sidewall of the reaction chamber 1 and is exposed to the reaction zone 6. The purge channel 51 extends from the first side surface 521 to the second side surface 522, and the purge channel 51 does not extend beyond the second side surface 522. If the purge channel 51 extends beyond the second side surface 522 and into the reaction zone 6, it will block the flow of the reaction gas and become a source of local turbulence.

[0063] In this embodiment, the shape of the purge channel 51 includes either a tubular shape or a slit segment. FIG2 shows a case where the purge channel 51 is tubular, and FIG3 shows a case where the purge channel 51 is slit segment. The purge channel 51 may also be a combination of tubular and slit segments.

[0064] In this embodiment, the inner diameter of the purge channel 51 is 0.2-2 mm.

[0065] In this embodiment, the inner diameter of the air outlet formed by the purge channel 51 on the second side 522 is greater than or equal to the inner diameter of the air inlet formed by the purge channel 51 on the first side 521. That is, the inner diameter remains unchanged from the air inlet of the purge channel 51 to the air outlet of the purge channel 51, or the inner diameter of the air outlet of the purge channel 51 is greater than the inner diameter of the air inlet of the purge channel 51. If the inner diameter of the air outlet of the purge channel 51 is larger, the area between the air outlets of adjacent purge channels 51 can be reduced, the purge area can be increased, and thus the adhesion of reaction by-products on the isolation wall 52 can be reduced. Furthermore, in this case, the arrangement of the purge channels 51 on the isolation wall 52 can be more sparse, thereby reducing the difficulty of processing the shielding member 5 and reducing costs.

[0066] With reference to Figures 4 and 5, in some embodiments, the purge channel 51 includes a first channel 511 and a second channel 512 connected to the first channel 511, and the inner diameter of the second channel 512 gradually increases and is larger than the inner diameter of the first channel 511. The second channel 512 is connected to the spatial region. In a further embodiment, along the centerline direction of the purge channel 51, the length of the first channel 511 is greater than the length of the second channel 512, wherein the first channel 511 guides the purge gas and the second channel 512 expands to increase the purge area of ​​the purge gas on the partition wall 52. Preferably, the length of the first channel 511 is greater than or equal to twice the length of the second channel 512 to ensure the gas guiding effect of the first channel 511.

[0067] In this embodiment, the sum of the areas of the air outlets formed by the purge channel 51 on the second side surface 522 is greater than or equal to 30% of the area of ​​the second side surface 522 to ensure the purge area and minimize the adhesion of reaction by-products on the isolation wall 52.

[0068] In this embodiment, referring to Figures 1 to 5, the purge channel 51 includes a vertical purge air flow channel, the center line of which is parallel to the axis of the rotating shaft 4, so that the air flow velocity of the purge gas introduced into the spatial area only includes an axial component.

[0069] It should be noted that the gas injection mechanism 2 and the carrier plate 3 in the reaction chamber 1 are arranged opposite to each other, and the gas injection mechanism 2 is located at the upper part and the carrier plate 3 is located at the lower part. Preferably, the axis of the reaction chamber 1 coincides with the axis of the rotating shaft 4, that is, the reaction chamber 1 is an upright vertical flow chamber. Therefore, by designing the direction in which the purge channel 51 passes through the shielding member 5, a vertical purge gas flow channel is formed. The vertical purge gas flow channel makes the direction in which the purge gas flows into the reaction chamber 1 downward along the axis of the reaction chamber 1, that is, the gas flow velocity of the purge gas flowing into the reaction chamber 1 only includes an axial component. This design can prevent the purge gas from causing additional disturbances to the gas in the reaction zone 6, effectively suppress or improve the deposition of reaction by-products on the inner wall of the shielding member 5, and can also reduce and suppress the generation of vortices near the inner wall of the shielding member 5.

[0070] In this embodiment, the shielding member 5 surrounds the carrier plate 3, and the distribution range of the purge channel 51 on the partition wall 52 satisfies: the purge gas outlet surface formed by the purge channel 51 located at the lower end of the partition wall 52 is not higher than the bearing surface of the carrier plate 3. Furthermore, the distribution range of the purge channel 51 on the partition wall 52 also covers at least part of the area included from the gas injection mechanism 2 to the bearing surface of the carrier plate 3. Preferably, the purge channels 51 are distributed in the area included from the gas injection mechanism 2 to the bearing surface of the carrier plate 3 on the partition wall 52 to ensure the maximum purge area. It is necessary not to affect the flow field of the reaction gas out of the edge of the gas injection mechanism 2. The smaller the distance between the purge gas outlet surface formed by the purge channel 51 located at the upper end of the partition wall 52 and the outlet surface of the reaction gas ejected from the gas injection mechanism 2, the better. The distance between the purge gas outlet surface formed by the uppermost purge channel 51 and the outlet surface of the reactant gas ejected from the gas injection mechanism 2 is defined as h. The distance between the outlet surface of the reactant gas ejected from the gas injection mechanism 2 and the support surface of the carrier plate 3 is defined as H, satisfying the following: h ≤ 0.25H. This minimizes the possibility of unpurged areas on the partition wall 52 above the carrier plate 3, thereby minimizing the possibility of reaction byproducts adhering to the partition wall 52.

[0071] In some embodiments, the radial distance d between the edge of the carrier plate 3 and the shielding member 5 satisfies the following relationship: 0.1H≤d≤H, where H is defined as the distance between the outlet surface of the reaction gas ejected from the gas injection mechanism 2 and the support surface of the carrier plate 3. If d is too small, the exhaust of gas from the reaction chamber 1 is hindered. If d is too large, gas is wasted and the utilization rate of the reaction gas is low.

[0072] In this embodiment, the purge channels 51 are circumferentially distributed on the partition wall 52 , and multiple layers of the purge channels 51 are formed along the axial direction of the rotating shaft 4 .

[0073] In some embodiments, the air outlets formed by the purge channels 51 in adjacent circumferential directions on the second side surface 522 are aligned or staggered. Figure 2 shows a case where the air outlets are staggered.

[0074] Furthermore, the inner diameters of the purge channels 51 at each layer are the same, or the inner diameters of the purge channels 51 at each layer gradually increase from the top of the reaction chamber 1 to the carrier plate 3 .

[0075] In some embodiments, the number of the purge channels 51 in each layer is the same, or, from the top of the reaction chamber 1 to the carrier plate 3 , the number of the purge channels 51 in the bottom layer is a multiple of the number of the purge channels 51 in the top layer.

[0076] Exemplarily, six circles of purge channels 51 are provided on the isolation wall 52 along the axial direction of the rotating shaft 4, and the number of the purge channels 51 on each circle is the same. Alternatively, assuming that the number of the purge channels 51 in the circle closest to the gas injection mechanism 2 is N, then from the top of the reaction chamber 1 to the carrier plate 3, the number of the purge channels 51 on each circle is N, 2N, 3N, 4N, 5N, 6N, or N, N, 2N, 2N, 3N, 3N, or N, N, N, 3N, 3N, 3N, and so on. There are other distribution methods, which will not be repeated here. The specific number distribution of the purge channels 51 depends on the distribution of the purge gas required by the process.

[0077] Therefore, the distribution of the purge gas from top to bottom of the shielding member 5 can be finely adjusted by the size of the purge channel 51 and the distribution density on the isolation wall 52, thereby ensuring the maximum purge area without affecting the flow field of the reaction chamber.

[0078] In this embodiment, referring to Figures 1 and 2, the shielding member 5 includes an annular cavity 53, which includes an outer wall adjacent to the inner wall of the reaction chamber 1 and an inner wall adjacent to the reaction zone 6. The inner wall of the annular cavity 53 forms the isolation wall 52, and the outer wall of the annular cavity 53 is adapted to the inner wall of the reaction chamber 1. A purge gas inlet 55 is provided in the annular cavity 53, and the annular cavity 53 is in communication with the purge channel 51. To improve the uniformity of the purge gas, multiple purge gas inlets 55 can be evenly arranged in the annular cavity 53. The purge gas inlet 55 can be located at the top of the annular cavity 53. Accordingly, the gas injection mechanism 2 is further configured to deliver purge gas to the annular cavity 53 through the purge gas inlet 55 located at the top of the annular cavity 53. In another embodiment, the purge gas inlet 55 may be located on the side wall of the annular cavity 53. Accordingly, the gas injection mechanism 2 may no longer be used to deliver the purge gas into the annular cavity 53. Instead, a purge gas supply mechanism (such as a gas pipe) may be provided on the side wall of the reaction chamber 1. The purge gas supply mechanism is connected to the annular cavity 53 through the purge gas inlet 55 located on the side wall of the annular cavity 53.

[0079] In other embodiments, referring to Figures 6 and 7, the shielding member 5 is no longer an annular cavity 53. Instead, during the vapor deposition process, an annular cavity 53' is adaptively enclosed between the partition wall 52, the inner sidewall of the reaction chamber 1, and the gas injection mechanism 2. The gas injection mechanism 2 is also used to inject purge gas into the annular cavity 53'. The annular cavity 53' is in communication with the purge channel 51. The purge gas enters the purge channel 51 through the annular cavity 53' and is then introduced into the spatial region. In another embodiment, the purge gas is no longer transported to the annular cavity 53' by the gas injection mechanism 2. Instead, a purge gas supply mechanism (such as a gas pipe) is provided on the sidewall of the reaction chamber 1, and the purge gas supply mechanism is in communication with the annular cavity 53'.

[0080] In some specific embodiments, with continued reference to FIG1 and FIG2, the gas injection mechanism 2 includes a first gas injection mechanism 21 and a second gas injection mechanism 22. The first gas injection mechanism 21 is located in the middle area of ​​the top of the reaction chamber 1 and is used to inject reaction gas into the reaction chamber 1. The second gas injection mechanism 22 is located in the peripheral area of ​​the top of the reaction chamber 1 and is arranged around the first gas injection mechanism 21. The second gas injection mechanism 22 matches the top of the annular cavity 53. The annular cavity 53 is located below the second gas injection mechanism 22. The gas outlet of the second gas injection mechanism 22 is in contact with and connected to the purge gas inlet 55. When vapor deposition is performed in the reaction chamber 1, the second gas injection mechanism 22 is used to transport purge gas into the annular cavity 53. After entering the annular cavity 53, the purge gas is introduced into the space area through the purge channel 51 to play a purge role, so as to suppress or improve the deposition of reaction by-products on the inner wall of the shielding member 5.

[0081] In some specific embodiments, the top of the annular cavity 53 matches the second gas injection mechanism 22. For example, the shape and size of the top of the annular cavity 53 are substantially the same as those of the second gas injection mechanism 22.

[0082] In some specific embodiments, referring to Figure 1, the outlet surface of the first gas injection mechanism 21 and the outlet surface of the second gas injection mechanism 22 are flat or approximately flat. When vapor deposition is carried out in the reaction chamber 1, the top of the annular cavity 53 abuts against the second gas injection mechanism 22, and the outlet of the second gas injection mechanism 22 is abutted and connected with the purge gas inlet 55. Then, the first gas injection mechanism 21 is used to transport reaction gas to the reaction zone 6, and the second gas injection mechanism 22 is used to transport purge gas into the annular cavity 53. After entering the annular cavity 53, the purge gas is introduced into the space area through the purge channel 51 to suppress or improve the deposition of reaction by-products on the inner wall of the shielding member 5.

[0083] In other specific embodiments, since the partition wall 52 has a certain wall thickness, in order to allow the purge gas to be ejected from the area closest to the gas injection mechanism, referring to FIG2 , the partition wall 52 is configured to be a structure composed of a straight tube portion and a trumpet portion. The straight tube portion is located at the upper end of the shielding member 5, and its radial dimensions are consistent, the trumpet portion is located at the lower end of the shielding member 5, and its radial dimensions gradually increase from top to bottom, and the purge channel 51 is distributed in the trumpet portion. In order to cooperate with the installation of the shielding member 5, referring to FIG8 , the outlet surface of the second gas injection mechanism 22 is higher than the outlet surface of the first gas injection mechanism 21, so that there is an upwardly concave step between the outlet surface of the second gas injection mechanism 22 and the outlet surface of the first gas injection mechanism 21. When vapor deposition is carried out in the reaction chamber 1, the straight cylindrical portion is adaptively inserted into the upwardly recessed step, the top of the annular cavity 53 abuts against the second gas injection mechanism 22, and the gas outlet of the second gas injection mechanism 22 is abutted and connected with the purge gas inlet 55, and the trumpet portion cooperates with the first gas injection mechanism 21 to form the space area, and the second gas injection mechanism 22 is used to transport purge gas into the annular cavity 53. After entering the annular cavity 53, the purge gas is introduced into the space area through the purge channel 51 to suppress or improve the deposition of reaction by-products on the inner wall of the shielding member 5.

[0084] Example 2

[0085] With reference to Figures 9 to 11, this embodiment provides a vapor deposition device, and its similarities with the first embodiment are not repeated here. The difference between this embodiment and the first embodiment is that: the purge channel 51 in the first embodiment is a vertical purge gas flow channel, that is, the center line of the purge channel 51 is parallel to the axis of the rotating shaft 4, so that the gas flow velocity of the purge gas introduced into the spatial region only includes an axial component. However, the purge channel 51 in this embodiment is not a vertical purge gas flow channel, but a rotating purge gas flow channel. The rotating purge gas flow channel is inclined along the circumferential direction at an angle β and penetrates the partition wall 52, so that the gas flow velocity of the purge gas introduced into the spatial region includes an axial component and a tangential component, thereby forming a rotating purge gas flow. The circumferential arrangement of the rotating purge gas flow channel on the partition wall 52 makes the rotation direction of the rotating purge gas flow the same as the rotation direction of the rotating shaft 4. It should be noted that in order to avoid the purge gas introduced into the reaction chamber from affecting the flow field in the reaction chamber, the angle β should be such that the air flow velocity of the purge gas introduced into the spatial region includes only axial and tangential components, but not radial components, that is, the direction of the purge channel 51 cannot be tilted in the radial direction of the reaction chamber 1 toward the axis of the rotating shaft 4.

[0086] Wherein β is: the tangent plane about the rotating shaft 4 that is defined as the centroid of the bottom surface of the air outlet formed on the second side surface 522 through the purge channel 51 is the tangent plane where the centroid of the bottom surface is located, the center line of the purge channel 51 is located at the tangent plane where the centroid of the bottom surface is located, and there is an angle β between the center line of the purge channel 51 and the axis of the rotating shaft 4, and β≠0°.

[0087] In this embodiment, a rotating purge gas flow is formed by spraying purge gas near the rotating carrier plate 3 through the rotating purge gas flow channel, and the direction of the rotating purge gas flow is consistent with the rotation direction of the carrier plate 3 in the vapor deposition equipment during the reaction process. The rotating purge gas flow has a tangential speed and momentum, so that the flow collision mixing and streamline turning process of the flow field in the edge area of ​​the reaction chamber 1 are smoother, thereby suppressing the generation of vortices in the reaction chamber 1 and making the laminar flow characteristics of the flow field in the reaction chamber 1 more stable.

[0088] In some embodiments, the angle β of the rotating purge gas flow channel at the bottom layer of the partition wall 52 is greater than or equal to the angle β of the rotating purge gas flow channel at the top layer of the partition wall 52, or the angle β of the rotating purge gas flow channel gradually increases from top to bottom along the partition wall 52. This can make the flow field in the reaction chamber 1 more stable in the flow collision, mixing, and streamline steering process at the edge region while reducing the impact on the flow field at the upper portion of the reaction chamber 1.

[0089] Preferably, the ratio of the tangential component to the axial component of the purge gas velocity should not be too large, otherwise it will have a significant impact on the gas flow in the reaction zone, which is not conducive to the balanced injection of the reaction gas into the reaction chamber 1. Preferably, 0°<β≤60°.

[0090] Example 3

[0091] This embodiment provides a vapor deposition device. Different from the first and second embodiments, the purge channel 51 includes a vertical purge air flow channel and a rotary purge air flow channel.

[0092] It should be noted that, since the carrier plate 3 rotates at high speed, only the area near the carrier plate 3 requires a rotating purge airflow to reduce eddy currents. Therefore, preferably, the rotating purge airflow channel is provided on the shielding member 5 in the circumferential area near the carrier plate 3. Furthermore, since the reaction chamber 1 of the vapor deposition apparatus is a vertical flow chamber, in order to avoid affecting the flow field of the reaction chamber 1, except for the purge channels 51 in the circumferential area near the carrier plate 3, which are configured as the rotating purge airflow channel, the purge channels 51 in other areas of the shielding member 5 are all configured as vertical purge airflow channels.

[0093] Example 4

[0094] 1 , a vapor deposition device is provided in this embodiment, and its structure is similar to that of any one of the vapor deposition devices in embodiments one to three, wherein the shielding member 5 includes an annular cavity 53, the inner wall of the annular cavity 53 is formed as the isolation wall 52, the outer wall of the annular cavity 53 is adapted to the inner wall of the reaction chamber 1, and a purge gas inlet 55 is provided on the annular cavity 53, and the annular cavity 53 is connected to the purge channel 51. In order to improve the uniformity of the purge gas, a plurality of purge gas inlets 55 can be evenly arranged on the annular cavity 53. In this embodiment, the purge gas in the annular cavity 53 is uniformly regulated, and the same purge gas is introduced into the annular cavity 53. The purge gas enters the annular cavity 53 through the purge gas inlet 55 and is uniformly distributed, and then is introduced into the spatial area through the various purge channels 51 on the isolation wall 52. Therefore, the type and composition of the purge gas transported from the annular cavity 53 to the purge channel 51 are the same. It should be noted that the aforementioned "same purge gas" does not refer to a single gas type, but rather refers to the same gas delivered to the reaction chamber 1 by each of the purge channels 51. The purge gas may be a single gas or a mixture of gases. The purge gases do not react with each other, or they react with each other but do not produce the target product. For example, for III-V MOCVD, the purge gas may include one or more of H2, N2, and an inert gas, or may be a Group V hydride source gas and a carrier gas.

[0095] A control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is provided before the purge gas inlet 55. The control unit uniformly regulates the purge gas in the annular cavity 53, thereby ensuring that the type and composition of the purge gas in the purge channel 51 are the same.

[0096] Example 5

[0097] This embodiment provides a vapor deposition device, which differs from the fourth embodiment in that, referring to Figure 12, at least one barrier 54 is provided on the shielding member 5, and the barrier 54 is located in the annular cavity 53. The barrier 54 divides the annular cavity 53 into several sub-annular cavities 531, and the purge gas delivered by at least two of the sub-annular cavities 531 is independently regulated.

[0098] In some embodiments, the barrier 54 is a cylindrical body coaxial with the outer wall of the annular cavity 53. Referring to FIG12 , the upper end of the barrier 54 abuts the inner top wall of the annular cavity 53, and the lower end of the barrier 54 abuts the isolation wall 52. When there are multiple barrier members 54, the barrier members 54 are coaxially distributed from the inside to the outside in the radial direction of the reaction chamber 1, and the height of the barrier members 54 in the axial direction of the reaction chamber 1 gradually increases from the inside to the outside. The barrier members 54 divide the annular cavity 53 from the inside to the outside into several sub-annular cavities 531. Each sub-annular cavity 531 is provided with a sub-purge gas inlet 551 at the top or sidewall, so that the purge gas delivered by at least two sub-annular cavities 531 can be independently regulated. Correspondingly, the barrier 54 divides the isolation wall 52 into multiple sub-areas from top to bottom, and multiple purge channels 51 are correspondingly arranged in each sub-area. By regulating the purge gas delivered by the sub-annular cavity 531, the purge gas delivered by the purge gas channels 51 in at least two of the sub-areas can be independently regulated.

[0099] In other embodiments, the barrier 54 is an annular plate parallel to the top of the annular cavity 53. Referring to FIG13 , the outer edge of the barrier 54 abuts the outer wall of the annular cavity 53, and the inner edge of the barrier 54 abuts the partition wall 52. When there are multiple barrier members 54, the barrier members 54 are stacked and distributed in parallel in the axial direction of the reaction chamber 1, and the width of the barrier members 54 in the radial direction of the reaction chamber 1 gradually decreases from top to bottom. The barrier members 54 divide the annular cavity 53 into several sub-annular cavities 531 from top to bottom. The sidewalls of each sub-annular cavity 531 are provided with a sub-purge gas inlet 551, so that the purge gas delivered by at least two sub-annular cavities 531 can be independently regulated. Correspondingly, the barrier 54 divides the isolation wall 52 into multiple sub-areas from top to bottom, and multiple purge channels 51 are correspondingly arranged in each sub-area. By regulating the purge gas delivered by the sub-annular cavity 531, the purge gas delivered by the purge gas channels 51 in at least two of the sub-areas can be independently regulated.

[0100] Furthermore, the flow rate of the purge gas delivered to each of the sub-annular cavities 531 is equal, or the flow rate of the purge gas delivered to each of the sub-annular cavities 531 gradually increases from the innermost to the outermost. In this way, the flow rate of the purge gas introduced into the space region through the purge channel 51 in each sub-region is equal from top to bottom, or the flow rate of the purge gas introduced into the space region through the purge channel 51 in each sub-region gradually increases from top to bottom.

[0101] In some embodiments, the average molecular weight of the purge gas delivered in each sub-annular cavity 531 is equal, or the average molecular weight of the purge gas delivered in each sub-annular cavity 531 gradually increases from the innermost to the outermost. In this way, the average molecular weight of the purge gas introduced into the spatial region through the purge channel 51 in each sub-region is equal from top to bottom, or the average molecular weight of the purge gas introduced into the spatial region through the purge channel 51 in each sub-region gradually increases from top to bottom.

[0102] It should be noted that, in this embodiment, by arranging the barrier 54 on the shielding member 5, the annular cavity 53 is divided into several sub-annular cavities 531 from the inside to the outside, so that the purge gas is more appropriately distributed after entering the reaction zone, and the distribution of the purge gas from top to bottom of the shielding member 5 is further refined, so that the size ratio, process, airflow conditions, etc. of the reaction chamber 1 can be more finely matched, thereby greatly improving the airflow stability in the reaction chamber 1.

[0103] Example 6

[0104] This embodiment provides a vapor deposition device, whose structure is similar to any one of the vapor deposition devices in Examples 1 to 5, wherein the shielding member 5 includes an annular cavity 53, the inner wall of the annular cavity 53 is formed as the isolation wall 52, the outer wall of the annular cavity 53 is adapted to the inner wall of the reaction chamber 1, and a purge gas inlet 55 is provided at the top of the annular cavity 53, and the annular cavity 53 is connected to the purge channel 51; the gas injection mechanism 2 includes a first gas injection mechanism 21 and a second gas injection mechanism 22, the first gas injection mechanism 21 is located in the middle area of ​​the top of the reaction chamber 1, and is used to inject reaction gas into the reaction chamber 1; the second gas injection mechanism 22 is located in the outer area of ​​the top of the reaction chamber 1 and is arranged around the first gas injection mechanism 21; the annular cavity 53 is located below the second gas injection mechanism 22, and the gas outlet of the second gas injection mechanism 22 is abutted and connected with the purge gas inlet 55, and is used to transport purge gas to the annular cavity 53, and the purge gas is introduced into the space area through the purge channel 51 after entering the annular cavity 53. The difference is that, as shown in Figure 14, in this embodiment, the side wall of the reaction chamber 1 is provided with an opening 11, and the opening 11 is used to place or take out the carrier plate 3. The lifting mechanism (not shown in the figure) is located on the top wall or bottom wall of the reaction chamber, and the lifting mechanism is connected to the shielding member 5. The lifting mechanism drives the shielding member 5 to move up and down along the axial direction of the rotating shaft 4, so that the shielding member 5 covers the opening 11 or exposes the opening 11, which is convenient for taking and placing the carrier plate 3.

[0105] In this embodiment, when the carrier disc 3 needs to be placed in or removed, the lifting mechanism drives the shielding member 5 to move downward along the axis of the rotating shaft 4, exposing the opening 11 and allowing the carrier disc 3 to be removed through the opening 11. When vapor deposition needs to be performed in the reaction chamber 1, the lifting mechanism drives the shielding member 5 to move upward along the axis of the rotating shaft 4, so that the outlet of the second gas injection mechanism 22 abuts and communicates with the purge gas inlet 55. The opening 11 is then blocked by the shielding member 5, and deposition reaction can now be performed in the reaction chamber 1.

[0106] In one embodiment, as shown in FIG1 , when the outlet surface of the first gas injection mechanism 21 and the outlet surface of the second gas injection mechanism 22 are level or approximately level, and the shielding member 5 is a slope, the space area is enclosed into a truncated cone structure.

[0107] When vapor deposition is required within the reaction chamber 1, the lifting mechanism moves upward, causing the top of the shielding member 5 to abut against the second gas injection mechanism 22, and causing the gas outlet of the second gas injection mechanism 22 to abut and communicate with the purge gas inlet 55, thereby shielding the opening 11 from the shielding member 5. The first gas injection mechanism 21 is then used to deliver reaction gas to the reaction zone, and the second gas injection mechanism 22 is used to deliver purge gas into the annular cavity 53. After entering the annular cavity 53, the purge gas is directed into the spatial region through the purge channel 51 to suppress or prevent reaction byproducts from adhering to the inner sidewall of the shielding member 5.

[0108] When it is necessary to put in or take out the carrier plate 3, the lifting mechanism drives the shielding member 5 to move downward along the axial direction of the rotating shaft 4, and the gas outlet of the second gas injection mechanism 22 is separated from the purge gas inlet 55 and continues to descend until the opening 11 is exposed, so that the carrier plate 3 can be taken out through the opening 11.

[0109] In another embodiment, referring to Figures 8 and 14, when the isolation wall 52 is configured as a structure composed of a straight cylindrical portion and a trumpet portion, wherein the straight cylindrical portion is located at the upper end of the shielding member 5, and its radial dimensions are consistent, the trumpet portion is located at the lower end of the shielding member 5, and its radial dimensions gradually increase from top to bottom, the trumpet portion cooperates with the first gas injection mechanism 21 to form the spatial area, and adaptively, in order to cooperate with the installation of the shielding member 5, the gas outlet surface of the second gas injection mechanism 22 is higher than the gas outlet surface of the first gas injection mechanism 21, so that there is an upwardly concave step between the gas outlet surface of the second gas injection mechanism 22 and the gas outlet surface of the first gas injection mechanism 21.

[0110] When vapor deposition is required in the reaction chamber 1, the lifting mechanism moves upward, fitting the straight cylindrical portion into the upwardly recessed step to abut against the second gas injection mechanism 22, and allowing the gas outlet of the second gas injection mechanism 22 to abut and communicate with the purge gas inlet 55. At this time, the opening 11 is shielded by the shielding member 5. The first gas injection mechanism 21 is then used to deliver reaction gas to the reaction zone, and the second gas injection mechanism 22 is used to deliver purge gas into the annular chamber 53.

[0111] When it is necessary to put in or take out the carrier plate 3, the lifting mechanism drives the shielding member 5 to move downward along the axial direction of the rotating shaft 4, and the gas outlet of the second gas injection mechanism 22 is separated from the purge gas inlet 55 and continues to descend until the opening 11 is exposed, so that the carrier plate 3 can be taken out through the opening 11.

[0112] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A vapor deposition device, characterized in that, Comprising: A reaction chamber; A gas injection mechanism located at the top of the reaction chamber; A carrier plate located in the reaction chamber, arranged opposite to the gas injection mechanism, and forming a reaction zone above the carrier plate; A rotating shaft connected to the carrier plate to drive the carrier plate to rotate during chemical vapor deposition; A shielding member located in the reaction chamber, arranged around the inner wall of the reaction chamber. The shielding member includes a partition wall on the side close to the reaction zone. The partition wall and the gas injection mechanism are adapted to enclose a spatial region. The spatial region covers the reaction zone. The radial dimension of the spatial region gradually increases from top to bottom. The outer diameter of the lowermost end of the shielding member is adapted to the inner diameter of the reaction chamber; A purge channel distributed on the partition wall. The purge channel penetrates through the partition wall and communicates with the spatial region to introduce purge gas into the spatial region.

2. The vapor deposition apparatus according to claim 1, wherein The purge channel includes a vertical purge gas flow channel. The center line of the vertical purge gas flow channel is parallel to the axis of the rotating shaft, so that the gas flow velocity of the purge gas introduced into the spatial region only includes an axial component.

3. The vapor deposition apparatus according to claim 2, characterized in that, The purge channel further includes a rotating purge gas flow channel. The rotating purge gas flow channel penetrates through the partition wall obliquely at an angle β in the circumferential direction, so that the gas flow velocity of the purge gas introduced into the spatial region includes an axial component and a tangential component, thereby forming a rotating purge gas flow. The circumferential arrangement of the rotating purge gas flow channels on the partition wall makes the rotation direction of the rotating purge gas flow the same as the rotation direction of the rotating shaft.

4. The vapor deposition apparatus according to claim 3, wherein The angle β of the rotating purge gas flow channel at the lowermost layer of the partition wall is greater than or equal to the angle β of the rotating purge gas flow channel at the uppermost layer of the partition wall, or the angle β of the rotating purge gas flow channels gradually increases from top to bottom along the partition wall.

5. The vapor deposition apparatus according to claim 3, wherein The rotating purge gas flow channels are located in the circumferential region of the shielding member close to the carrier plate.

6. The vapor deposition apparatus according to claim 1, wherein The partition wall includes a first side close to the inner wall of the reaction chamber and a second side far from the inner wall of the reaction chamber. The purge channel penetrates from the first side to the second side without exceeding the second side, and the inner diameter of the gas outlet formed by the purge channel on the second side is greater than or equal to the inner diameter of the gas inlet formed by the purge channel on the first side.

7. The vapor deposition apparatus according to claim 1, wherein The shielding member surrounds the carrier plate, and the distribution range of the purge channel on the partition wall satisfies that the purge gas outlet surface formed by the purge channel at the lowermost end of the partition wall is not higher than the carrying surface of the carrier plate.

8. The vapor deposition apparatus according to claim 7, wherein The distribution range of the purge channel on the partition wall also covers at least part of the region from the gas injection mechanism to the carrying surface of the carrier plate.

9. The vapor deposition apparatus according to any one of claims 1 to 8, characterized in that, The shielding member includes an annular cavity. The annular cavity includes an outer wall close to the inner wall of the reaction chamber and an inner wall close to the reaction zone. The inner wall of the annular cavity forms the partition wall. The outer wall of the annular cavity is adapted to the inner wall of the reaction chamber. The annular cavity is provided with a purge gas inlet, and the annular cavity communicates with the purge channel.

10. The vapor deposition apparatus according to claim 9, characterized in that, At least one barrier is provided on the shielding member. The barrier is located in the annular cavity and divides the annular cavity into a plurality of sub-annular cavities. The purge gas delivered by at least two of the sub-annular cavities is independently regulated.

11. The vapor deposition apparatus according to claim 10, wherein The barrier is a cylindrical body coaxial with the outer wall of the annular cavity, the upper end of the barrier abuts the inner top wall of the annular cavity, and the lower end of the barrier abuts the isolation wall; or, the barrier is an annular plate parallel to the top of the annular cavity, the outer edge of the barrier abuts the outer wall of the annular cavity, and the inner edge of the barrier abuts the isolation wall.

12. The vapor deposition apparatus according to claim 10, wherein, The flow rates of the purge gas delivered in each of the sub-annular cavities are equal, or the flow rates of the purge gas delivered in each of the sub-annular cavities gradually increase from the inner to the outer sides.

13. The vapor deposition apparatus according to claim 12, wherein The average molecular weight of the purge gas delivered in each of the sub-annular cavities is equal, or the average molecular weight of the purge gas delivered in each of the sub-annular cavities gradually increases from the inner to the outer sides.

14. The vapor deposition apparatus according to claim 9, wherein The gas injection mechanism includes a first gas injection mechanism and a second gas injection mechanism. The first gas injection mechanism is located in the middle area of the top of the reaction chamber and is used to inject reaction gas into the reaction chamber; the second gas injection mechanism is located in the outer area of the top of the reaction chamber and is arranged around the first gas injection mechanism. The annular cavity is located below the second gas injection mechanism, and the purge gas inlet is located at the top of the annular cavity. The outlet of the second gas injection mechanism is abutted and connected with the purge gas inlet, and is used to transport purge gas to the annular cavity. After entering the annular cavity, the purge gas is introduced into the space area through the purge channel.

15. The vapor deposition apparatus according to claim 14, wherein An opening is provided on the side wall of the reaction chamber, and the opening is used to place or remove the carrier plate. The lifting mechanism is located on the top wall or bottom wall of the reaction chamber. The lifting mechanism is connected to the shielding member, and the lifting mechanism drives the shielding member to move up and down along the axial direction of the rotating shaft so that the shielding member covers the opening or exposes the opening.

16. The vapor deposition apparatus according to claim 15, wherein, When the carrying tray needs to be placed in or taken out, the lifting mechanism drives the shielding member to move downward along the axis of the rotating shaft to expose the opening; When vapor deposition is required in the reaction chamber, the lifting mechanism drives the shielding member to move upward along the axial direction of the rotating shaft, so that the gas outlet of the second gas injection mechanism is abutted and connected with the purge gas inlet, and the opening is blocked by the shielding member.

17. The vapor deposition apparatus according to claim 14, characterized in that, The top end of the annular cavity matches the second gas injection mechanism.

18. The vapor deposition apparatus according to claim 17, wherein, The gas outlet surface of the first gas injection mechanism is flush with the gas outlet surface of the second gas injection mechanism.

19. The vapor deposition apparatus according to claim 17, characterized in that, The partition wall comprises a straight cylindrical portion with a uniform radial dimension at the upper end and a trumpet portion with a radial dimension gradually increasing from top to bottom at the lower end.

20. The vapor deposition apparatus according to claim 19, wherein, The outlet surface of the second gas injection mechanism is higher than the outlet surface of the first gas injection mechanism, so that there is an upwardly concave step between the outlet surface of the second gas injection mechanism and the outlet surface of the first gas injection mechanism. When vapor deposition is carried out in the reaction chamber, the straight cylindrical portion is adaptively inserted into the upwardly concave step.

21. The vapor deposition device according to claim 1, characterized in that, The purge channels are circumferentially distributed on the isolation wall and form multiple layers of the purge channels along the axial direction of the rotation axis.

22. The vapor deposition apparatus according to claim 21, wherein, The inner diameters of the purge channels in each layer are the same, or the inner diameters of the purge channels in each layer gradually increase from the top of the reaction chamber to the direction of the carrier plate.

23. The vapor deposition apparatus according to claim 21, wherein The number of the purge channels in each layer is the same, or, from the top of the reaction chamber to the direction of the carrier plate, the number of the purge channels in the lowermost layer is a multiple of the number of the purge channels in the uppermost layer.

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