Composition for manufacturing semiconductor device, semiconductor device manufacturing apparatus comprising same, and method for manufacturing semiconductor device

Abstract

An embodiment provides: a composition for manufacturing a semiconductor device, comprising acetylene and a solvent for dissolving the acetylene therein, the solvent being at least one selected from the group consisting of triethyl phosphate, trimethyl phosphate, tris(N,N'-tetramethylene)phosphonic acid triamide, and γ-butyrolactone; a semiconductor device manufacturing apparatus comprising the composition for manufacturing a semiconductor device; and a method for manufacturing a semiconductor device by using the composition for manufacturing a semiconductor device.

Description

Composition for manufacturing semiconductor devices, semiconductor device manufacturing apparatus including the same, and method for manufacturing semiconductor devices

[0001] The present invention relates to a composition for manufacturing a semiconductor device, a semiconductor device manufacturing apparatus including the same, and a method for manufacturing a semiconductor device using the same.

[0002] Acetylene is widely used in various industrial applications, including welding and chemical synthesis. In particular, acetylene is increasingly used as a source material for depositing carbon and carbon-containing films in the electronics industry. Applications include the deposition of amorphous carbon hard mask films.

[0003] However, due to its thermal instability, the storage of acetylene presents several challenges. Acetylene can explosively decompose into carbon and hydrogen under high pressure and temperature storage conditions, even in the absence of air or oxygen.

[0004] In particular, acetylene is known to be explosive when pressurized to pressures greater than 15 psig. Therefore, the storage and transportation of acetylene remain challenging. One way to overcome this problem is to dissolve acetylene in acetone, which is contained in a metal cylinder filled with a porous material. Because acetylene is highly soluble in acetone, acetone is commonly used for this purpose. At a temperature of approximately 15°C and atmospheric pressure, one volume of liquid acetone can absorb 25 volumes of gaseous acetylene, and it will continue to absorb an additional 25 volumes of acetylene for each additional atmosphere of pressure it is subjected to (The Encyclopedia Britannica: A Dictionary of Arts, Sciences, Literature and General Information, Hugh Chisholm, University Press 1910). Furthermore, the acetylene gas stream recovered from the acetone solution may contain significant amounts of acetone vapor.

[0005] The present invention provides a composition for manufacturing a semiconductor device capable of stably supplying acetylene, a semiconductor device manufacturing apparatus including the same, and a semiconductor device manufacturing method.

[0006] A composition for manufacturing a semiconductor device according to an embodiment comprises acetylene; and a solvent for dissolving the acetylene.

[0007] In a composition for manufacturing a semiconductor device according to one embodiment, the solvent may be selected from the group consisting of triethyl phosphate, trimethyl phosphate, tris(N,N-tetramethylene)phosphonic acid triamide, and γ-butyrolactone.

[0008] In a composition for manufacturing a semiconductor device according to one embodiment, the solvent may have a Henry's constant of more than 0.25 mol / (ℓ·atm) at room temperature with respect to the acetylene.

[0009] In a composition for manufacturing a semiconductor device according to one embodiment, the solvent may have a dipole moment of less than 2.8 Debye.

[0010] In a composition for manufacturing a semiconductor device according to one embodiment, the solvent may have a vapor pressure of less than 500 Pa at 20°C.

[0011] A composition for manufacturing a semiconductor device according to one embodiment may contain less than 2000 ppm of water based on the total weight of the composition.

[0012] In a composition for manufacturing a semiconductor device according to one embodiment, the solvent may have a molecular weight exceeding 75 g / mol.

[0013] In a composition for manufacturing a semiconductor device according to one embodiment, the solvent may have a flash point exceeding 60°C.

[0014] A composition for manufacturing a semiconductor device according to one embodiment may include less than 1000 ppm of carbon dioxide based on the total weight of the composition.

[0015] A composition for manufacturing a semiconductor device according to one embodiment may include less than 1000 ppm of oxygen gas based on the total weight of the composition.

[0016] A composition for manufacturing a semiconductor device according to one embodiment may include less than 1000 ppm of nitrogen gas based on the total weight of the composition.

[0017] A composition for manufacturing a semiconductor device according to one embodiment may include less than 2000 ppm of hydrogen gas based on the total weight of the composition.

[0018] A composition for manufacturing a semiconductor device according to one embodiment may include less than 1000 ppm of a hydrocarbon gas other than acetylene based on the total weight of the composition.

[0019] A composition for manufacturing a semiconductor device according to one embodiment may include less than 1 ppm of a metal based on the total weight of the composition.

[0020] A semiconductor device manufacturing device according to an embodiment comprises a container; a porous filler disposed within the container; and a composition injected into the container, wherein the composition comprises a solvent; and acetylene dissolved in the solvent.

[0021] In a semiconductor device manufacturing device according to one embodiment, the solvent may be selected from the group consisting of triethyl phosphate, trimethyl phosphate, tris(N,N-tetramethylene)phosphonic acid triamide, and γ-butyrolactone.

[0022] In a semiconductor device manufacturing device according to one embodiment, a filter unit connected to the container and filtering acetylene emitted from the container may be further included.

[0023] A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: preparing a composition including acetylene and a solvent for dissolving the acetylene; introducing acetylene eluted from the composition into a chamber; and forming an amorphous carbon film on a semiconductor substrate using the acetylene introduced into the chamber.

[0024] In a method for manufacturing a semiconductor device according to one embodiment, the solvent may be selected from the group consisting of triethyl phosphate, trimethyl phosphate, tris(N,N-tetramethylene)phosphonic acid triamide, and γ-butyrolactone.

[0025] In a method for manufacturing a semiconductor device according to one embodiment, an etching target layer is disposed between the semiconductor substrate and the amorphous carbon film, and the etching target layer may further include a step of etching using the amorphous carbon film as a hard mask layer.

[0026] In a method for manufacturing a semiconductor device according to one embodiment, a hole is arranged on the semiconductor substrate, and the amorphous carbon film can be filled in the hole.

[0027] In a method for manufacturing a semiconductor device according to one embodiment, a pattern is included on the semiconductor substrate, and the amorphous carbon film can cover the pattern.

[0028] In a method for manufacturing a semiconductor device according to one embodiment, in the step of forming the amorphous carbon film, the temperature within the chamber is 500°C to 600°C, the flow rate of the acetylene supplied within the chamber is 100 sccm to 3000 sccm, and together with the acetylene, 100 sccm to 3000 sccm of hydrogen gas can be supplied within the chamber.

[0029] A composition for manufacturing a semiconductor device according to an embodiment comprises acetylene and a solvent capable of dissolving the acetylene. Since the solvent has an appropriate Henry's constant, it can appropriately dissolve the acetylene. Accordingly, the composition for manufacturing a semiconductor device according to an embodiment can include an improved amount of the acetylene. In addition, the composition for manufacturing a semiconductor device according to an embodiment can supply high-purity acetylene to a semiconductor device manufacturing process for forming an amorphous carbon film.

[0030] Additionally, the solvent may have an appropriate vapor pressure. Accordingly, the composition for manufacturing a semiconductor device according to the embodiment may include an enhanced amount of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiment may supply high-purity acetylene to a semiconductor device manufacturing process for forming an amorphous carbon film.

[0031] Additionally, the solvent may have an appropriate boiling point. Accordingly, the composition for manufacturing a semiconductor device according to the embodiment may include an enhanced amount of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiment may supply high-purity acetylene to a semiconductor device manufacturing process for forming an amorphous carbon film.

[0032] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may contain water in an appropriate amount.

[0033] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may contain carbon dioxide in an appropriate amount.

[0034] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include oxygen gas in an appropriate amount.

[0035] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include nitrogen gas in an appropriate amount.

[0036] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include hydrogen gas in an appropriate amount.

[0037] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include a hydrocarbon gas excluding acetylene in an appropriate amount.

[0038] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include a metal in an appropriate amount.

[0039] Accordingly, the composition for manufacturing a semiconductor device according to the embodiment can supply acetylene having a composition suitable for a semiconductor process for forming an amorphous carbon film. Accordingly, the composition for manufacturing a semiconductor device according to the embodiment can provide a semiconductor device with fewer defects.

[0040] Additionally, the semiconductor device manufacturing device according to the embodiment may include a filter unit. Accordingly, the semiconductor device manufacturing device according to the embodiment can effectively remove fine particles derived from the porous filler.

[0041] Accordingly, the semiconductor device manufacturing device according to the embodiment can provide a semiconductor device with fewer defects.

[0042] In particular, the composition for manufacturing a semiconductor device according to the embodiment can provide an amorphous carbon film of improved quality. Accordingly, the method for manufacturing a semiconductor device according to the embodiment can manufacture a semiconductor device with reduced bonding.

[0043] In addition, since the solvent can suppress changes in the acetylene gas over time, the composition for manufacturing a semiconductor device according to the embodiment can supply high-quality acetylene gas to the manufacturing process of a semiconductor device.

[0044] FIG. 1 is a drawing illustrating a device for forming an amorphous carbon film according to an embodiment.

[0045] Fig. 2 is a cross-sectional view illustrating an acetylene supply device according to an embodiment.

[0046] FIGS. 3 to 7 are drawings illustrating a part of a process for manufacturing a semiconductor device according to one embodiment.

[0047] FIGS. 8 to 14 are drawings illustrating a part of a process for manufacturing a semiconductor device according to another embodiment.

[0048] FIGS. 15 to 18 are drawings illustrating a part of a process for manufacturing a semiconductor device according to another embodiment.

[0049] Before describing various exemplary embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of the configurations or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0050] Fig. 1 is a drawing illustrating a device for forming an amorphous carbon film according to an embodiment. Fig. 2 is a cross-sectional view illustrating an acetylene supply device according to an embodiment.

[0051] The acetylene solution according to the embodiment comprises acetylene and a solvent.

[0052] The above acetylene solution may contain the acetylene in an amount of about 10 wt% to about 90 wt% based on the total weight.

[0053] The acetylene may have a purity exceeding about 99.1 wt%. The acetylene may have a purity exceeding about 99.5 wt%. The acetylene may have a purity exceeding about 99.9 wt%. The acetylene may have a purity exceeding about 99.95 wt%.

[0054] The above acetylene may be a composition having the purity as described above and containing at least one or more from the group consisting of water, carbon monoxide, carbon dioxide, oxygen gas, nitrogen gas, hydrogen gas, hydrocarbons, or metals.

[0055] The acetylene may contain water. The water may be contained in the acetylene in an amount of less than about 2000 ppm based on the weight of the acetylene. The water may be contained in the acetylene in an amount of less than about 1500 ppm based on the weight of the acetylene. The water may be contained in the acetylene in an amount of less than about 1000 ppm based on the weight of the acetylene. The water may be contained in the acetylene in an amount of less than about 500 ppm based on the weight of the acetylene.

[0056] Additionally, the acetylene may contain the water in an amount of about 10 ppm to about 2000 ppm by weight. The acetylene may contain the water in an amount of about 10 ppm to about 1500 ppm by weight. The acetylene may contain the water in an amount of about 10 ppm to about 1000 ppm by weight. The acetylene may contain the water in an amount of about 10 ppm to about 500 ppm by weight.

[0057] The acetylene may contain carbon monoxide. The carbon monoxide may be contained in the acetylene in an amount of less than about 20 ppm based on the weight of the acetylene. The carbon monoxide may be contained in the acetylene in an amount of less than about 15 ppm based on the weight of the acetylene. The carbon monoxide may be contained in the acetylene in an amount of less than about 10 ppm based on the weight of the acetylene. The carbon monoxide may be contained in the acetylene in an amount of less than about 5 ppm based on the weight of the acetylene.

[0058] Additionally, the acetylene may contain the carbon monoxide in an amount of about 0.1 ppm to about 20 ppm by weight. The acetylene may contain the carbon monoxide in an amount of about 0.1 ppm to about 15 ppm by weight. The acetylene may contain the carbon monoxide in an amount of about 0.1 ppm to about 10 ppm by weight. The acetylene may contain the carbon monoxide in an amount of about 0.1 ppm to about 5 ppm by weight.

[0059] The acetylene may contain carbon dioxide. The carbon dioxide may be included in the acetylene in an amount of less than about 1000 ppm based on the weight of the acetylene. The carbon dioxide may be included in the acetylene in an amount of less than about 500 ppm based on the weight of the acetylene. The carbon dioxide may be included in the acetylene in an amount of less than about 300 ppm based on the weight of the acetylene. The carbon dioxide may be included in the acetylene in an amount of less than about 200 ppm based on the weight of the acetylene.

[0060] Additionally, the acetylene may comprise the carbon dioxide in an amount of about 1 ppm to about 1000 ppm by weight. The acetylene may comprise the carbon dioxide in an amount of about 1 ppm to about 500 ppm by weight. The acetylene may comprise the carbon dioxide in an amount of about 1 ppm to about 300 ppm by weight. The acetylene may comprise the carbon dioxide in an amount of about 1 ppm to about 200 ppm by weight.

[0061] The acetylene may contain oxygen gas. The oxygen gas may be included in the acetylene in an amount of less than about 200 ppm based on the weight of the acetylene. The oxygen gas may be included in the acetylene in an amount of less than about 150 ppm based on the weight of the acetylene. The oxygen gas may be included in the acetylene in an amount of less than about 100 ppm based on the weight of the acetylene. The oxygen gas may be included in the acetylene in an amount of less than about 50 ppm based on the weight of the acetylene.

[0062] Additionally, the acetylene may contain the oxygen gas in an amount of about 1 ppm to about 200 ppm by weight. The acetylene may contain the oxygen gas in an amount of about 1 ppm to about 150 ppm by weight. The acetylene may contain the oxygen gas in an amount of about 1 ppm to about 100 ppm by weight. The acetylene may contain the oxygen gas in an amount of about 1 ppm to about 50 ppm by weight.

[0063] The acetylene may contain nitrogen gas. The nitrogen gas may be included in the acetylene in an amount of less than about 400 ppm based on the weight of the acetylene. The nitrogen gas may be included in the acetylene in an amount of less than about 300 ppm based on the weight of the acetylene. The nitrogen gas may be included in the acetylene in an amount of less than about 200 ppm based on the weight of the acetylene. The nitrogen gas may be included in the acetylene in an amount of less than about 100 ppm based on the weight of the acetylene.

[0064] Additionally, the acetylene may contain the nitrogen gas in an amount of about 1 ppm to about 400 ppm by weight. The acetylene may contain the nitrogen gas in an amount of about 1 ppm to about 300 ppm by weight. The acetylene may contain the nitrogen gas in an amount of about 1 ppm to about 200 ppm by weight. The acetylene may contain the nitrogen gas in an amount of about 1 ppm to about 100 ppm by weight.

[0065] The acetylene may contain hydrogen gas. The hydrogen may be included in the acetylene in an amount of less than about 2000 ppm based on the weight of the acetylene. The hydrogen gas may be included in the acetylene in an amount of less than about 1500 ppm based on the weight of the acetylene. The hydrogen gas may be included in the acetylene in an amount of less than about 1000 ppm based on the weight of the acetylene. The hydrogen gas may be included in the acetylene in an amount of less than about 500 ppm based on the weight of the acetylene.

[0066] Additionally, the acetylene may contain the hydrogen gas in an amount of about 10 ppm to about 2000 ppm by weight. The acetylene may contain the hydrogen gas in an amount of about 10 ppm to about 1500 ppm by weight. The acetylene may contain the hydrogen gas in an amount of about 10 ppm to about 1000 ppm by weight. The acetylene may contain the hydrogen gas in an amount of about 10 ppm to about 500 ppm by weight.

[0067] The above acetylene may include a hydrocarbon other than the above acetylene. The hydrocarbon may be selected from the group consisting of methane (CH4), ethane (C2H6), ethylene (C2H4), or propane (C3H8).

[0068] The hydrocarbon may be included in the acetylene in an amount of less than about 1000 ppm based on the weight of the acetylene. The hydrocarbon may be included in the acetylene in an amount of less than about 500 ppm based on the weight of the acetylene. The hydrocarbon may be included in the acetylene in an amount of less than about 300 ppm based on the weight of the acetylene. The hydrocarbon may be included in the acetylene in an amount of less than about 200 ppm based on the weight of the acetylene.

[0069] Additionally, the acetylene may comprise the hydrocarbon in an amount of about 10 ppm to about 1000 ppm by weight. The acetylene may comprise the hydrocarbon in an amount of about 10 ppm to about 500 ppm by weight. The acetylene may comprise the hydrocarbon in an amount of about 10 ppm to about 300 ppm by weight. The acetylene may comprise the hydrocarbon in an amount of about 10 ppm to about 200 ppm by weight.

[0070] The above acetylene may contain a metal. The metal may be at least one selected from the group consisting of sodium, calcium, iron, copper, aluminum, magnesium, potassium, nickel, zinc, chromium, manganese, titanium, gallium, or silicon.

[0071] The metal may be included in the acetylene in an amount of less than about 1 ppm based on the weight of the acetylene. The metal may be included in the acetylene in an amount of less than about 0.5 ppm based on the weight of the acetylene. The metal may be included in the acetylene in an amount of less than about 0.3 ppm based on the weight of the acetylene. The metal may be included in the acetylene in an amount of less than about 0.2 ppm based on the weight of the acetylene.

[0072] Additionally, the acetylene may contain the metal in an amount of about 0.01 ppm to about 1 ppm by weight. The acetylene may contain the metal in an amount of about 0.01 ppm to about 0.5 ppm by weight. The acetylene may contain the metal in an amount of about 0.01 ppm to about 0.3 ppm by weight. The acetylene may contain the metal in an amount of about 0.01 ppm to about 0.2 ppm by weight.

[0073] Since the above acetylene contains the above-mentioned contents of water, carbon monoxide, carbon dioxide, oxygen gas, nitrogen gas, hydrocarbon, hydrogen gas, or metal in the above-mentioned contents, it can be effectively applied to the manufacturing process of semiconductor devices. In particular, the above-mentioned acetylene can reduce defects in the manufacturing process of semiconductor devices.

[0074] The solvent can dissolve the acetylene. The solvent can dissolve the acetylene in a high concentration. Accordingly, the acetylene can be dissolved in the solvent, thereby producing an acetylene solution according to the embodiment.

[0075] The solvent may have a Henry's constant at a given temperature with respect to the acetylene.

[0076] The above solvent may have a solubility in acetylene as shown in the following equation 1 at a given temperature.

[0077] [Formula 1]

[0078] C = k × P

[0079] Here, C is the solubility at the temperature, k is Henry's constant at the temperature, and P may be the partial pressure of acetylene at the temperature. The unit of C is mol / ℓ, and the pressure of P is atm.

[0080] The solvent may have a Henry's constant of greater than about 0.25 mol / (ℓ·atm), greater than about 0.35 mol / (ℓ·atm), greater than about 0.45 mol / (ℓ·atm), greater than about 0.55 mol / (ℓ·atm), greater than about 0.65 mol / (ℓ·atm), greater than about 0.75 mol / (ℓ·atm), greater than about 0.85 mol / (ℓ·atm), greater than about 0.95 mol / (ℓ·atm), and greater than about 1.05 mol / (ℓ·atm) at a temperature of about 23°C with respect to the acetylene.

[0081] The solvent may have a maximum value of the Henry constant of about 2.0 mol / (ℓ·atm) at a temperature of about 23°C for the acetylene.

[0082] The solvent may have a Henry's constant of about 0.25 mol / (ℓ·atm) to about 0.60 mol / (ℓ·atm), 0.35 mol / (ℓ·atm) to about 0.60 mol / (ℓ·atm), about 0.45 mol / (ℓ·atm) to about 0.60 mol / (ℓ·atm), about 0.25 mol / (ℓ·atm) to about 0.50 mol / (ℓ·atm), or about 0.35 mol / (ℓ·atm) to about 0.50 mol / (ℓ·atm) with respect to the acetylene at a temperature of about 23°C.

[0083] The solvent may have a Henry's constant of about 0.70 mol / (ℓ·atm) to about 0.90 mol / (ℓ·atm), 0.75 mol / (ℓ·atm) to about 0.90 mol / (ℓ·atm), about 0.80 mol / (ℓ·atm) to about 0.90 mol / (ℓ·atm), about 0.70 mol / (ℓ·atm) to about 0.80 mol / (ℓ·atm), or about 0.75 mol / (ℓ·atm) to about 0.85 mol / (ℓ·atm) at a temperature of about 23°C with respect to the acetylene.

[0084] The solvent may have a Henry's constant of about 0.95 mol / (ℓ·atm) to about 2.0 mol / (ℓ·atm), 1.0 mol / (ℓ·atm) to about 2.0 mol / (ℓ·atm), about 1.05 mol / (ℓ·atm) to about 2.0 mol / (ℓ·atm), about 1.1 mol / (ℓ·atm) to about 2.0 mol / (ℓ·atm), or about 1.15 mol / (ℓ·atm) to about 2.0 mol / (ℓ·atm) at a temperature of about 23°C with respect to the acetylene.

[0085] The solvent may have a Henry's constant of about 0.95 mol / (ℓ·atm) to about 1.05 mol / (ℓ·atm), 1.05 mol / (ℓ·atm) to about 1.15 mol / (ℓ·atm), about 1.15 mol / (ℓ·atm) to about 1.25 mol / (ℓ·atm), about 0.95 mol / (ℓ·atm) to about 1.35 mol / (ℓ·atm), or about 1.05 mol / (ℓ·atm) to about 1.25 mol / (ℓ·atm) at a temperature of about 23°C with respect to the acetylene.

[0086] The solvent may have a solubility in acetylene greater than about 10 ml / ml at room temperature and atmospheric pressure. Here, the solubility may be the volume of acetylene dissolved in 1 ml of the solvent.

[0087] The solvent may have a solubility in acetylene of greater than about 12 ml / ml, greater than about 15 ml / ml, or greater than about 17 ml / ml at room temperature and atmospheric pressure. The maximum value of the solubility may be 100 ml / ml.

[0088] Additionally, the solvent may have a solubility in the acetylene greater than about 0.5 g / mol at room temperature and atmospheric pressure. Here, the solubility may be the mass of acetylene dissolved in 1 mol of the solvent.

[0089] The solvent may have a solubility of greater than about 0.7 g / mol, greater than about 0.8 g / mol, greater than about 1 g / mol, or greater than 1.2 g / mol with respect to the acetylene at room temperature and atmospheric pressure. The maximum value of the solubility may be 20 g / mol.

[0090] The solvent may have a vapor pressure. The vapor pressure of the solvent may be less than about 500 Pa, less than about 450 Pa, less than about 400 Pa, less than about 350 Pa, less than about 300 Pa, less than about 250 Pa, less than about 200 Pa, less than about 150 Pa, less than about 100 Pa, or less than about 50 Pa at about 20°C.

[0091] The minimum vapor pressure of the above solvent may be about 0.1 Pa at about 20°C.

[0092] The solvent may have a vapor pressure. The vapor pressure of the solvent may be less than about 500 Pa, less than about 450 Pa, less than about 400 Pa, less than about 350 Pa, less than about 300 Pa, less than about 250 Pa, less than about 200 Pa, less than about 150 Pa, less than about 100 Pa, or less than about 50 Pa at about 25°C.

[0093] The minimum vapor pressure of the above solvent may be about 0.1 Pa at about 25°C.

[0094] The vapor pressure of the solvent may be from about 0.1 Pa to about 50 Pa, from about 50 Pa to about 100 Pa, from about 100 Pa to about 150 Pa, from about 150 Pa to about 200 Pa, from about 200 Pa to about 250 Pa, from about 250 Pa to about 300 Pa, from about 300 Pa to about 350 Pa, from about 350 Pa to about 400 Pa, from about 400 Pa to about 450 Pa, or from about 450 Pa to about 500 Pa at about 20°C.

[0095] The vapor pressure of the solvent may be from about 0.1 Pa to about 50 Pa, from about 50 Pa to about 100 Pa, from about 100 Pa to about 150 Pa, from about 150 Pa to about 200 Pa, from about 200 Pa to about 250 Pa, from about 250 Pa to about 300 Pa, from about 300 Pa to about 350 Pa, from about 350 Pa to about 400 Pa, from about 400 Pa to about 450 Pa, or from about 450 Pa to about 500 Pa at about 25°C.

[0096] The vapor pressure of the solvent is about 600 Pa to about 30,000 Pa, about 1000 Pa to about 30,000 Pa, about 1500 Pa to about 30,000 Pa, about 2000 Pa to about 30,000 Pa, about 3000 Pa to about 30,000 Pa, about 4000 Pa to about 30,000 Pa, about 5000 Pa to about 30,000 Pa, about 6000 Pa to about 30,000 Pa, about 7000 Pa to about 30,000 Pa, about 8000 Pa to about 30,000 Pa, about 9000 Pa to about 30,000 Pa, about 10,000 Pa to about 30,000 Pa, about 11,000 Pa to about 30,000 Pa, about 12,000 Pa It may be about 30000 Pa, about 15000 Pa to about 30000 Pa, or about 18000 Pa to about 30000 Pa.

[0097] The vapor pressure of the solvent is about 600 Pa to about 30,000 Pa, about 1000 Pa to about 30,000 Pa, about 1500 Pa to about 30,000 Pa, about 2000 Pa to about 30,000 Pa, about 3000 Pa to about 30,000 Pa, about 4000 Pa to about 30,000 Pa, about 5000 Pa to about 30,000 Pa, about 6000 Pa to about 30,000 Pa, about 7000 Pa to about 30,000 Pa, about 8000 Pa to about 30,000 Pa, about 9000 Pa to about 30,000 Pa, about 10,000 Pa to about 30,000 Pa, about 11,000 Pa to about 30,000 Pa, about 12,000 Pa It may be about 30000 Pa, about 15000 Pa to about 30000 Pa, or about 18000 Pa to about 30000 Pa.

[0098] The vapor pressure of the solvent is about 600 Pa to about 30000 Pa, about 1000 Pa to about 28000 Pa, about 1000 Pa to about 25000 Pa, about 1000 Pa to about 22000 Pa, about 1000 Pa to about 20000 Pa, about 1000 Pa to about 18000 Pa, about 1000 Pa to about 15000 Pa, about 600 Pa to about 12000 Pa, about 600 Pa to about 10000 Pa, about 600 Pa to about 9000 Pa, about 600 Pa to about 8000 Pa, about 600 Pa to about 7000 Pa, about 600 Pa to about 6000 Pa, about 600 Pa to about 5000 Pa, about 600 It may be from about 4000 Pa to about 4000 Pa or from about 600 Pa to about 3000 Pa.

[0099] The vapor pressure of the solvent is about 600 Pa to about 30000 Pa, about 1000 Pa to about 28000 Pa, about 1000 Pa to about 25000 Pa, about 1000 Pa to about 22000 Pa, about 1000 Pa to about 20000 Pa, about 1000 Pa to about 18000 Pa, about 1000 Pa to about 15000 Pa, about 600 Pa to about 12000 Pa, about 600 Pa to about 10000 Pa, about 600 Pa to about 9000 Pa, about 600 Pa to about 8000 Pa, about 600 Pa to about 7000 Pa, about 600 Pa to about 6000 Pa, about 600 Pa to about 5000 Pa, about 600 It may be from about 4000 Pa to about 4000 Pa or from about 600 Pa to about 3000 Pa.

[0100] The vapor pressure of the solvent may be from about 600 Pa to about 1000 Pa, from about 1000 Pa to about 2000 Pa, from about 2000 Pa to about 4000 Pa, from about 4000 Pa to about 6000 Pa, from about 6000 Pa to about 8000 Pa, from about 8000 Pa to about 10000 Pa, from about 10000 Pa to about 12000 Pa, from about 12000 Pa to about 14000 Pa, from about 16000 Pa to about 18000 Pa, from about 20000 Pa to about 22000 Pa, from about 22000 Pa to about 24000 Pa, from about 26000 Pa to about 28000 Pa, or from about 28000 Pa to about 30000 Pa at about 25°C.

[0101] The vapor pressure of the solvent may be from about 600 Pa to about 1000 Pa, from about 1000 Pa to about 2000 Pa, from about 2000 Pa to about 4000 Pa, from about 4000 Pa to about 6000 Pa, from about 6000 Pa to about 8000 Pa, from about 8000 Pa to about 10000 Pa, from about 10000 Pa to about 12000 Pa, from about 12000 Pa to about 14000 Pa, from about 16000 Pa to about 18000 Pa, from about 20000 Pa to about 22000 Pa, from about 22000 Pa to about 24000 Pa, from about 26000 Pa to about 28000 Pa, or from about 28000 Pa to about 30000 Pa at about 20°C.

[0102] The solvent may have a boiling point greater than about 160°C at atmospheric pressure. The boiling point of the solvent may be greater than about 160°C, greater than about 170°C, greater than about 180°C, greater than about 190°C, or greater than about 200°C at atmospheric pressure.

[0103] The maximum boiling point of the above solvent may be about 400°C at atmospheric pressure.

[0104] Additionally, the boiling point of the solvent may be from about 50°C to about 150°C at a pressure of about 15 mmHg.

[0105] Additionally, the boiling point of the solvent may be about 100°C to about 150°C at a pressure of about 60 Torr.

[0106] In a composition for manufacturing a semiconductor device according to one embodiment, the solvent may be selected from the group consisting of tris(N,N-tetramethylene)phosphonic acid triamide, trimethyl phosphite, triethyl phosphate, or γ-butyrolactone.

[0107] The above tris(N,N-tetramethylene)phosphonic acid triamide (TPPA) can be represented by the following chemical formula 1.

[0108] [Chemical Formula 1]

[0109]

[0110] The above trimethyl phosphite (TMP) can be represented by the following chemical formula 2.

[0111] [Chemical Formula 2]

[0112]

[0113] The above triethyl phosphate (TEP) can be represented by the following chemical formula 3.

[0114] [Chemical Formula 3]

[0115]

[0116] The above γ-butyrolactone (GBL) can be represented by the following chemical formula 4.

[0117] [Chemical Formula 4]

[0118]

[0119] The solvent may be a composition comprising at least one selected from the group consisting of water, carbon monoxide, carbon dioxide, oxygen gas, nitrogen gas, hydrogen gas, hydrocarbons, or metals.

[0120] The solvent may contain water. The water may be contained in the solvent in an amount of less than about 2000 ppm based on the weight of the solvent. The water may be contained in the solvent in an amount of less than about 1500 ppm based on the weight of the solvent. The water may be contained in the solvent in an amount of less than about 1000 ppm based on the weight of the solvent. The water may be contained in the solvent in an amount of less than about 500 ppm based on the weight of the solvent.

[0121] Additionally, the solvent may contain the water in an amount of about 10 ppm to about 2000 ppm by weight. The solvent may contain the water in an amount of about 10 ppm to about 1500 ppm by weight. The solvent may contain the water in an amount of about 10 ppm to about 1000 ppm by weight. The solvent may contain the water in an amount of about 10 ppm to about 500 ppm by weight.

[0122] The solvent may contain carbon monoxide. The carbon monoxide may be contained in the solvent in an amount of less than about 20 ppm based on the weight of the solvent. The carbon monoxide may be contained in the solvent in an amount of less than about 15 ppm based on the weight of the solvent. The carbon monoxide may be contained in the solvent in an amount of less than about 10 ppm based on the weight of the solvent. The carbon monoxide may be contained in the solvent in an amount of less than about 5 ppm based on the weight of the solvent.

[0123] Additionally, the solvent may comprise the carbon monoxide in an amount of about 0.1 ppm to about 20 ppm by weight. The solvent may comprise the carbon monoxide in an amount of about 0.1 ppm to about 15 ppm by weight. The solvent may comprise the carbon monoxide in an amount of about 0.1 ppm to about 10 ppm by weight. The solvent may comprise the carbon monoxide in an amount of about 0.1 ppm to about 5 ppm by weight.

[0124] The solvent may contain carbon dioxide. The carbon dioxide may be contained in the solvent in an amount of less than about 1000 ppm based on the weight of the solvent. The carbon dioxide may be contained in the solvent in an amount of less than about 500 ppm based on the weight of the solvent. The carbon dioxide may be contained in the solvent in an amount of less than about 300 ppm based on the weight of the solvent. The carbon dioxide may be contained in the solvent in an amount of less than about 200 ppm based on the weight of the solvent.

[0125] Additionally, the solvent may comprise the carbon dioxide in an amount of about 1 ppm to about 1000 ppm by weight. The solvent may comprise the carbon dioxide in an amount of about 1 ppm to about 500 ppm by weight. The solvent may comprise the carbon dioxide in an amount of about 1 ppm to about 300 ppm by weight. The solvent may comprise the carbon dioxide in an amount of about 1 ppm to about 200 ppm by weight.

[0126] The solvent may contain oxygen gas. The oxygen gas may be contained in the solvent in an amount of less than about 200 ppm based on the weight of the solvent. The oxygen gas may be contained in the solvent in an amount of less than about 150 ppm based on the weight of the solvent. The oxygen gas may be contained in the solvent in an amount of less than about 100 ppm based on the weight of the solvent. The oxygen gas may be contained in the solvent in an amount of less than about 50 ppm based on the weight of the solvent.

[0127] Additionally, the solvent may comprise the oxygen gas in an amount of about 1 ppm to about 200 ppm by weight. The solvent may comprise the oxygen gas in an amount of about 1 ppm to about 150 ppm by weight. The solvent may comprise the oxygen gas in an amount of about 1 ppm to about 100 ppm by weight. The solvent may comprise the oxygen gas in an amount of about 1 ppm to about 50 ppm by weight.

[0128] The solvent may contain nitrogen gas. The nitrogen gas may be contained in the solvent in an amount of less than about 400 ppm based on the weight of the solvent. The nitrogen gas may be contained in the solvent in an amount of less than about 300 ppm based on the weight of the solvent. The nitrogen gas may be contained in the solvent in an amount of less than about 200 ppm based on the weight of the solvent. The nitrogen gas may be contained in the solvent in an amount of less than about 100 ppm based on the weight of the solvent.

[0129] Additionally, the solvent may comprise the nitrogen gas in an amount of about 1 ppm to about 400 ppm by weight. The solvent may comprise the nitrogen gas in an amount of about 1 ppm to about 300 ppm by weight. The solvent may comprise the nitrogen gas in an amount of about 1 ppm to about 200 ppm by weight. The solvent may comprise the nitrogen gas in an amount of about 1 ppm to about 100 ppm by weight.

[0130] The solvent may contain hydrogen gas. The hydrogen may be contained in the solvent in an amount of less than about 2000 ppm based on the weight of the solvent. The hydrogen gas may be contained in the solvent in an amount of less than about 1500 ppm based on the weight of the solvent. The hydrogen gas may be contained in the solvent in an amount of less than about 1000 ppm based on the weight of the solvent. The hydrogen gas may be contained in the solvent in an amount of less than about 500 ppm based on the weight of the solvent.

[0131] Additionally, the solvent may contain the hydrogen gas in an amount of about 10 ppm to about 2000 ppm by weight. The solvent may contain the hydrogen gas in an amount of about 10 ppm to about 1500 ppm by weight. The solvent may contain the hydrogen gas in an amount of about 10 ppm to about 1000 ppm by weight. The solvent may contain the hydrogen gas in an amount of about 10 ppm to about 500 ppm by weight.

[0132] The solvent may include a hydrocarbon other than the acetylene. The hydrocarbon may be selected from the group consisting of methane (CH4), ethane (C2H6), ethylene (C2H4), or propane (C3H8).

[0133] The hydrocarbon may be included in the solvent in an amount of less than about 1000 ppm based on the weight of the solvent. The hydrocarbon may be included in the solvent in an amount of less than about 500 ppm based on the weight of the solvent. The hydrocarbon may be included in the solvent in an amount of less than about 300 ppm based on the weight of the solvent. The hydrocarbon may be included in the solvent in an amount of less than about 200 ppm based on the weight of the solvent.

[0134] Additionally, the solvent may comprise the hydrocarbon in an amount of about 10 ppm to about 1000 ppm by weight. The solvent may comprise the hydrocarbon in an amount of about 10 ppm to about 500 ppm by weight. The solvent may comprise the hydrocarbon in an amount of about 10 ppm to about 300 ppm by weight. The solvent may comprise the hydrocarbon in an amount of about 10 ppm to about 200 ppm by weight.

[0135] The solvent may comprise a metal. The metal may be at least one selected from the group consisting of sodium, calcium, iron, copper, aluminum, magnesium, potassium, nickel, zinc, chromium, manganese, titanium, gallium, or silicon.

[0136] The metal may be included in the solvent in an amount of less than about 1 ppm based on the weight of the solvent. The metal may be included in the solvent in an amount of less than about 0.5 ppm based on the weight of the solvent. The metal may be included in the solvent in an amount of less than about 0.3 ppm based on the weight of the solvent. The metal may be included in the solvent in an amount of less than about 0.2 ppm based on the weight of the solvent.

[0137] Additionally, the solvent may contain the metal in an amount of about 0.01 ppm to about 1 ppm by weight. The solvent may contain the metal in an amount of about 0.01 ppm to about 0.5 ppm by weight. The solvent may contain the metal in an amount of about 0.01 ppm to about 0.3 ppm by weight. The solvent may contain the metal in an amount of about 0.01 ppm to about 0.2 ppm by weight.

[0138] The solvent may contain the water, the carbon monoxide, the carbon dioxide, the oxygen gas, the nitrogen gas, the hydrocarbon, the hydrogen gas or the metal in the above contents by a fractional distillation process or a reduced pressure fractional distillation process. That is, the contents of the water, the carbon monoxide, the carbon dioxide, the oxygen gas, the nitrogen gas, the hydrocarbon, the hydrogen gas or the metal contained in the solvent may be controlled by the fractional distillation process or the reduced pressure fractional distillation process.

[0139] Since the solvent contains water, carbon monoxide, carbon dioxide, oxygen gas, nitrogen gas, hydrocarbon, hydrogen gas, or metal in the above-mentioned amounts, it can be effectively applied to the manufacturing process of semiconductor devices. In particular, the solvent can reduce defects in the manufacturing process of semiconductor devices.

[0140] The acetylene solution according to the embodiment may include water. The water may be included in the solution in an amount of less than about 2000 ppm based on the weight of the solution. The water may be included in the solution in an amount of less than about 1500 ppm based on the weight of the solution. The water may be included in the solution in an amount of less than about 1000 ppm based on the weight of the solution. The water may be included in the solution in an amount of less than about 500 ppm based on the weight of the solution.

[0141] Additionally, the solution may contain the water in an amount of about 10 ppm to about 2000 ppm by weight. The solution may contain the water in an amount of about 10 ppm to about 1500 ppm by weight. The solution may contain the water in an amount of about 10 ppm to about 1000 ppm by weight. The solution may contain the water in an amount of about 10 ppm to about 500 ppm by weight.

[0142] The solution may contain carbon monoxide. The carbon monoxide may be contained in the solution in an amount of less than about 20 ppm based on the weight of the solution. The carbon monoxide may be contained in the solution in an amount of less than about 15 ppm based on the weight of the solution. The carbon monoxide may be contained in the solution in an amount of less than about 10 ppm based on the weight of the solution. The carbon monoxide may be contained in the solution in an amount of less than about 5 ppm based on the weight of the solution.

[0143] Additionally, the solution may comprise the carbon monoxide in an amount of about 0.1 ppm to about 20 ppm by weight. The solution may comprise the carbon monoxide in an amount of about 0.1 ppm to about 15 ppm by weight. The solution may comprise the carbon monoxide in an amount of about 0.1 ppm to about 10 ppm by weight. The solution may comprise the carbon monoxide in an amount of about 0.1 ppm to about 5 ppm by weight.

[0144] The solution may contain carbon dioxide. The carbon dioxide may be included in the solution in an amount of less than about 1000 ppm based on the weight of the solution. The carbon dioxide may be included in the solution in an amount of less than about 500 ppm based on the weight of the solution. The carbon dioxide may be included in the solution in an amount of less than about 300 ppm based on the weight of the solution. The carbon dioxide may be included in the solution in an amount of less than about 200 ppm based on the weight of the solution.

[0145] Additionally, the solution may comprise carbon dioxide in an amount of about 1 ppm to about 1000 ppm by weight. The solution may comprise carbon dioxide in an amount of about 1 ppm to about 500 ppm by weight. The solution may comprise carbon dioxide in an amount of about 1 ppm to about 300 ppm by weight. The solution may comprise carbon dioxide in an amount of about 1 ppm to about 200 ppm by weight.

[0146] The solution may contain oxygen gas. The oxygen gas may be included in the solution in an amount of less than about 200 ppm based on the weight of the solution. The oxygen gas may be included in the solution in an amount of less than about 150 ppm based on the weight of the solution. The oxygen gas may be included in the solution in an amount of less than about 100 ppm based on the weight of the solution. The oxygen gas may be included in the solution in an amount of less than about 50 ppm based on the weight of the solution.

[0147] Additionally, the solution may comprise the oxygen gas in an amount of about 1 ppm to about 200 ppm by weight. The solution may comprise the oxygen gas in an amount of about 1 ppm to about 150 ppm by weight. The solution may comprise the oxygen gas in an amount of about 1 ppm to about 100 ppm by weight. The solution may comprise the oxygen gas in an amount of about 1 ppm to about 50 ppm by weight.

[0148] The solution may contain nitrogen gas. The nitrogen gas may be included in the solution in an amount of less than about 400 ppm based on the weight of the solution. The nitrogen gas may be included in the solution in an amount of less than about 300 ppm based on the weight of the solution. The nitrogen gas may be included in the solution in an amount of less than about 200 ppm based on the weight of the solution. The nitrogen gas may be included in the solution in an amount of less than about 100 ppm based on the weight of the solution.

[0149] Additionally, the solution may comprise the nitrogen gas in an amount of about 1 ppm to about 400 ppm by weight. The solution may comprise the nitrogen gas in an amount of about 1 ppm to about 300 ppm by weight. The solution may comprise the nitrogen gas in an amount of about 1 ppm to about 200 ppm by weight. The solution may comprise the nitrogen gas in an amount of about 1 ppm to about 100 ppm by weight.

[0150] The solution may contain hydrogen gas. The hydrogen may be included in the solution in an amount of less than about 2000 ppm based on the weight of the solution. The hydrogen gas may be included in the solution in an amount of less than about 1500 ppm based on the weight of the solution. The hydrogen gas may be included in the solution in an amount of less than about 1000 ppm based on the weight of the solution. The hydrogen gas may be included in the solution in an amount of less than about 500 ppm based on the weight of the solution.

[0151] Additionally, the solution may comprise the hydrogen gas in an amount of about 10 ppm to about 2000 ppm by weight. The solution may comprise the hydrogen gas in an amount of about 10 ppm to about 1500 ppm by weight. The solution may comprise the hydrogen gas in an amount of about 10 ppm to about 1000 ppm by weight. The solution may comprise the hydrogen gas in an amount of about 10 ppm to about 500 ppm by weight.

[0152] The above solution may contain a hydrocarbon other than the acetylene. The hydrocarbon may be selected from the group consisting of methane (CH4), ethane (C2H6), ethylene (C2H4), or propane (C3H8).

[0153] The hydrocarbon may be included in the solution in an amount of less than about 1000 ppm based on the weight of the solution. The hydrocarbon may be included in the solution in an amount of less than about 500 ppm based on the weight of the solution. The hydrocarbon may be included in the solution in an amount of less than about 300 ppm based on the weight of the solution. The hydrocarbon may be included in the solution in an amount of less than about 200 ppm based on the weight of the solution.

[0154] Additionally, the solution may comprise the hydrocarbon in an amount of about 10 ppm to about 1000 ppm by weight. The solution may comprise the hydrocarbon in an amount of about 10 ppm to about 500 ppm by weight. The solution may comprise the hydrocarbon in an amount of about 10 ppm to about 300 ppm by weight. The solution may comprise the hydrocarbon in an amount of about 10 ppm to about 200 ppm by weight.

[0155] The solution may contain a metal. The metal may be at least one selected from the group consisting of sodium, calcium, iron, copper, aluminum, magnesium, potassium, nickel, zinc, chromium, manganese, titanium, gallium, or silicon.

[0156] The metal may be included in the solution in an amount of less than about 1 ppm based on the weight of the solution. The metal may be included in the solution in an amount of less than about 0.5 ppm based on the weight of the solution. The metal may be included in the solution in an amount of less than about 0.3 ppm based on the weight of the solution. The metal may be included in the solution in an amount of less than about 0.2 ppm based on the weight of the solution.

[0157] Additionally, the solution may contain the metal in an amount of about 0.01 ppm to about 1 ppm by weight. The solution may contain the metal in an amount of about 0.01 ppm to about 0.5 ppm by weight. The solution may contain the metal in an amount of about 0.01 ppm to about 0.3 ppm by weight. The solution may contain the metal in an amount of about 0.01 ppm to about 0.2 ppm by weight.

[0158] Since the above solution contains an appropriate amount of acetylene and an appropriate amount of solvent, it can contain the water, the carbon monoxide, the carbon dioxide, the oxygen gas, the nitrogen gas, the hydrocarbon, the hydrogen gas or the metal in the above amounts.

[0159] Since the above solution contains water, carbon monoxide, carbon dioxide, oxygen gas, nitrogen gas, hydrocarbon, hydrogen gas, or metal in the above contents, it can be effectively applied to the manufacturing process of semiconductor devices. In particular, the solution can reduce defects in the manufacturing process of semiconductor devices.

[0160] The solution may have a total content of water, carbon monoxide, carbon dioxide, oxygen gas, nitrogen gas, hydrocarbon, hydrogen gas and / or metal of less than about 5%, less than about 3%, less than about 1%, less than about 5% to about 0.001% or more, less than about 3% to about 0.001% or more, or less than about 1% to about 0.001% or more, based on the total mass.

[0161] In particular, since the solution has the above content, when the acetylene is supplied onto the semiconductor substrate, an oxidation reaction that may occur due to the water, carbon monoxide, carbon dioxide, oxygen gas, nitrogen gas, hydrocarbon, hydrogen gas, or metal can be prevented. In addition, since the solution has the above content, changes in the acetylene over time can be prevented.

[0162] Accordingly, the acetylene solution according to the embodiment can provide a semiconductor device with low defects.

[0163] An amorphous carbon film can be formed on a semiconductor substrate by the following method. That is, by using the acetylene, a semiconductor device including the amorphous carbon film can be manufactured.

[0164] First, a semiconductor device manufacturing device according to an embodiment is prepared. The semiconductor device manufacturing device may be a deposition device for forming the amorphous carbon film.

[0165] Referring to FIG. 1, the semiconductor device manufacturing device may include an acetylene supply device (100), an acetylene purification device (200), a first filter unit (400), a second filter unit (500), and a deposition chamber (300).

[0166] Referring to FIG. 2, the acetylene supply device (100) may include a pressure vessel (110) and a porous filler (120).

[0167] The pressure vessel can accommodate the porous filler. The pressure vessel can seal the porous filler from the outside. The pressure vessel can have enhanced rigidity to prevent leakage at high pressures. The pressure vessel can include a steel cylinder.

[0168] The porous filler may be placed within the pressure vessel. The porous filler may be filled within the pressure vessel. The porous filler may accommodate the solvent. The solvent may be adsorbed within the pores of the porous filler.

[0169] The porous filler may include activated carbon, zeolite, calcium silicate or a metal organic framework.

[0170] The porous filler may include pores. The pores of the porous filler may have an average diameter of about 0.01 μm to about 10 μm. The pores of the porous filler may have an average diameter of about 0.01 μm to about 1 μm.

[0171] The porous filler may have a porosity greater than about 50 vol%, about 60 vol%, about 70 vol%, about 80 vol%, or about 90 vol%.

[0172] The solvent may be adsorbed into the porous filler, and the acetylene may be dissolved in the solvent. That is, the solvent may be absorbed into the porous filler, and the acetylene may be injected into the pressure vessel at high pressure, so that the acetylene may be dissolved in the solvent. The solvent may be filled between the pores of the porous filler and the porous filler.

[0173] The solvent may be injected into the pressure vessel. The amount of the solvent injected may be about 0.1 kg / ℓ to about 1 kg / ℓ based on the volume of the pressure vessel. The amount of the solvent injected may be about 0.3 kg / ℓ to about 0.7 kg / ℓ based on the volume of the pressure vessel.

[0174] Accordingly, the acetylene is charged at high pressure into the acetylene supply device, and the acetylene supply device can accommodate the acetylene solution. In order to charge the acetylene into the acetylene supply device, the acetylene can be injected into the pressure vessel at a pressure of about 200 psi to about 300 psi.

[0175] The acetylene purification device may be connected to the acetylene supply device. The acetylene purification device may receive the acetylene from the acetylene supply device. The acetylene purification device may purify the acetylene and then supply it to the deposition chamber.

[0176] The above acetylene purification device may include a trap for condensing and separating the solvent contained in the acetylene gas, and a cooling device for lowering the temperature of the trap.

[0177] A refrigerant is placed around the trap, and the temperature of the trap can be controlled by the refrigerant. The trap can be immersed in the refrigerant. In addition, the cooler can cool the refrigerant.

[0178] Accordingly, the temperature of the trap can be controlled by the cooler. The cooler can control the temperature of the trap to about -60°C to about -10°C or about -60°C to about -30°C.

[0179] The trap may include a mist barrier. The mist barrier may allow gaseous acetylene to pass through and block condensed solvent. Accordingly, the trap may capture the condensed solvent and supply high-purity acetylene to the deposition chamber. The captured solvent may be discharged through the outlet of the trap.

[0180] With respect to the above acetylene purification device, acetylene purification process and amorphous carbon film formation process, the descriptions described in Korean Registered Patent No. 10-0986503 or Korean Publication Patent No. 10-2010-0068226, etc., can be essentially combined with the description of the present embodiment, except for the parts that are technically inconsistent.

[0181] A semiconductor device manufacturing device according to an embodiment may include a filter unit. The filter unit may filter metal nanoparticles, metal ions, metal compound nanoparticles, acetylene gas, etc. The filter unit may include a first filter unit (400) and a second filter unit (500).

[0182] The first filter unit (400) may be connected to the acetylene supply device. The first filter unit may be positioned between the acetylene supply device and the acetylene purification device. The first filter unit may be connected between the acetylene supply device and the acetylene purification device.

[0183] The above first filter unit can filter acetylene gas supplied from the acetylene supply device.

[0184] The first filter unit may include at least one of an ultrafiltration filter, an adsorption filter, or a HEPA filter. The first filter unit may have a pore diameter of about 0.005 μm to about 0.1 μm.

[0185] The first filter unit can filter metal particles and / or metal compound particles. In addition, the first filter unit can capture highly active metals through the adsorption filter.

[0186] The second filter unit (500) may be connected to the acetylene supply device. The second filter unit may be connected to the acetylene supply device via the acetylene purification device. The second filter unit may be disposed between the deposition chamber and the acetylene purification device. The second filter unit may be connected between the deposition chamber and the acetylene purification device.

[0187] The second filter unit can filter acetylene gas supplied from the acetylene supply device. The second filter unit can filter acetylene gas that has passed through the acetylene purification device.

[0188] The second filter unit may include at least one of an ultrafiltration filter, an adsorption filter, or a HEPA filter. The second filter unit may have a pore diameter of about 0.005 μm to about 0.1 μm.

[0189] The second filter unit can filter metal particles and / or metal compound particles. In addition, the second filter unit can capture highly active metals through the adsorption filter.

[0190] The above deposition chamber can accommodate a semiconductor substrate (W). The deposition chamber can form an amorphous carbon film on the semiconductor substrate using acetylene gas supplied from the acetylene purification device.

[0191] The above deposition chamber may be a chemical vapor deposition device or a plasma enhanced chemical vapor deposition device.

[0192] The above deposition chamber can form an amorphous carbon film on a semiconductor substrate, such as a wafer, by a chemical vapor reaction. In addition, the deposition chamber can form plasma by applying an electric field to a precursor gas, such as acetylene, and an amorphous carbon film can be formed on the semiconductor substrate by the plasma.

[0193] With respect to the above deposition chamber and deposition process, the descriptions described in Korean Patent Publication No. 10-2023-0098788, etc., may be essentially combined with the description of the present embodiment, except for the parts that are technically disjointed.

[0194] A method for manufacturing a semiconductor device according to an embodiment may include the steps of preparing a composition including acetylene and a solvent for dissolving the acetylene; introducing acetylene eluted from the composition into a chamber; and forming an amorphous carbon film on a semiconductor substrate using the acetylene introduced into the chamber.

[0195] In order to form the amorphous carbon film on the semiconductor substrate, first, the acetylene supply device is prepared.

[0196] The solvent is injected into the acetylene supply device. Thereafter, the acetylene is injected into the acetylene supply device. The acetylene may be injected into the pressure vessel at a pressure of about 200 psi to about 300 psi.

[0197] Thereafter, the acetylene supply device can be transported and connected to the acetylene purification device.

[0198] Thereafter, the acetylene can be eluted from the solvent and supplied to the acetylene purification device at a temperature of about 10°C to about 50°C.

[0199] Thereafter, the acetylene purification device can remove residual solvent in the acetylene gas at a temperature of about -60°C to about -10°C and supply high-purity acetylene gas to the deposition chamber.

[0200] The deposition chamber can form an amorphous carbon film on the semiconductor substrate using the high-purity acetylene gas. The pressure within the deposition chamber can be from about 0.1 torr to about 10 torr. In addition, in the process of forming the amorphous carbon film, the process temperature of the deposition chamber can be from about 100°C to about 800°C.

[0201] In the deposition process of the amorphous carbon film, the process temperature may be about 450°C to about 650°C. In the deposition process of the amorphous carbon film, the process temperature may be about 500°C to about 600°C.

[0202] In the deposition process of the above amorphous carbon film, radio frequency (RF) power may be used to form plasma. The frequency of the RF power may be from about 3 kHz to about 300 GHz. The frequency of the RF power may be from about 5 MHz to about 100 MHz. The frequency of the RF power may be from about 10 MHz to about 20 MHz.

[0203] Additionally, the RF power may be from about 400 W to about 3000 W. The RF power may be from about 500 W to about 2000 W.

[0204] In addition, in the deposition process of the amorphous carbon film, the introduction flow rate of the acetylene gas may be from about 100 sccm to about 3000 sccm. In addition, in the deposition process of the amorphous carbon film, hydrogen gas may be supplied into the chamber together with the acetylene gas at a flow rate of from about 100 sccm to 3000 sccm.

[0205] Additionally, in the deposition process of the amorphous carbon film, the process time may be from about 10 seconds to about 1000 seconds.

[0206] Referring to FIGS. 3 to 7, in order to manufacture a semiconductor device according to one embodiment, the following process may be performed.

[0207] As illustrated in FIG. 3, in order to form a semiconductor device according to an embodiment, an etching target layer (610), a hard mask layer (620), and a photoresist layer (630) may be formed on a semiconductor substrate (600).

[0208] The semiconductor substrate (600) may be a bulk silicon substrate or a silicon substrate including a silicon oxide film. The semiconductor substrate (600) may include a heterogeneous material other than silicon. The semiconductor substrate (600) may include a silicon germanium alloy, indium antimonide, tellurium sulphide, indium arsenide, indium phosphide, gallium arsenide, or antimony gallium.

[0209] The etching target layer (610) may be an insulating layer. The etching target layer (610) may include silicon oxide, silicon nitride, or silicon oxynitride.

[0210] The hard mask layer (620) may be formed by acetylene gas included in an acetylene supply device according to an embodiment. The hard mask layer (620) may be formed by a deposition process of the acetylene gas. The acetylene gas may be used to form the hard mask layer (620) by a chemical vapor deposition process. The hard mask layer (620) may be an amorphous carbon film formed by the acetylene gas.

[0211] The photoresist layer (630) may be laminated on the hard mask layer (620). A photoresist composition may be coated on the hard mask layer (620) by spin coating, immersion coating, or spray coating, and dried to form the photoresist layer (630).

[0212] As illustrated in Fig. 4, the photoresist layer (630) is patterned through an exposure process and a development process. Accordingly, a photoresist pattern (631) is formed on the hard mask layer (620).

[0213] Thereafter, as illustrated in FIG. 5, the photoresist pattern (631) is used as an etch mask, and the hard mask layer (620) is patterned through an etching process. Accordingly, a hard mask pattern (621) can be formed on the etching target layer (610).

[0214] Thereafter, as illustrated in FIG. 6, the hard mask pattern is used as an etch mask, and the etching target layer (610) is etched. Accordingly, a recess can be formed in the etching target layer (610).

[0215] Thereafter, as illustrated in FIG. 7, a conductive pattern (640) is formed within the recess (611) by a damascene process. The conductive pattern (640) may be formed by a damascene process. In order to form the conductive pattern (640), a metal layer is formed within the recess (611) and on the etching target layer (610). Thereafter, a chemical mechanical polishing process may be used to planarize an upper portion of the metal layer and a portion of the etching target layer (610), and the conductive pattern (640) may be formed.

[0216] The above-described conductive pattern (640) can be used as a conductive line of a semiconductor device according to an embodiment. The semiconductor device according to an embodiment can be used as a word line of a volatile memory device such as a dynamic random access memory (DRAM).

[0217] Since the acetylene solution according to the embodiment includes the solvent, high-quality acetylene can be supplied to the deposition chamber. Accordingly, the acetylene gas supplied by the acetylene supply device can provide a hard mask layer (620) with improved etching selectivity. In particular, since the acetylene supply device according to the embodiment reduces the amount of solvent elution, it can provide a hard mask layer (620) including high-quality amorphous carbon.

[0218] Referring to FIGS. 8 to 14, the following process may be performed to manufacture a semiconductor device according to one embodiment.

[0219] As illustrated in FIG. 8, a first mold layer (710) is formed on a semiconductor substrate (600). The first mold layer (710) may include a first mold insulating layer (711) and a first mold sacrificial layer (712) that are alternately laminated with each other.

[0220] The first mold insulating layer (711) and the first mold sacrificial layer (712) may include silicon oxide, silicon nitride, or silicon oxynitride. The first mold sacrificial layer (712) may have etch selectivity with respect to the first mold insulating layer (711). For example, the first mold insulating layer (711) may include silicon oxide, and the first mold sacrificial layer (712) may include silicon nitride.

[0221] Thereafter, as illustrated in FIG. 9, a first hole (713) is formed in the first mold layer (710). The first hole (713) may be formed by a photolithography process or the like. The first hole (713) may penetrate the first mold layer (710).

[0222] Thereafter, as illustrated in FIG. 10, a sacrificial pattern (731) is formed in the first hole (713). Amorphous carbon may be filled in the first hole (713) to form the sacrificial pattern (731). The sacrificial pattern (731) may be formed by acetylene gas supplied by an acetylene supply device according to an embodiment. That is, the sacrificial pattern (731) may be formed by an acetylene solution according to an embodiment. The sacrificial pattern (731) may have etch selectivity with respect to the first mold layer (710).

[0223] The process conditions under which the above amorphous carbon is deposited and the sacrificial pattern (731) is formed may be as follows.

[0224] In the above amorphous carbon deposition process, the process temperature may be about 450°C to about 650°C. In the above amorphous carbon deposition process, the process temperature may be about 500°C to about 600°C.

[0225] In the deposition process of the amorphous carbon, radio frequency (RF) power may be used to form plasma. The frequency of the RF power may be from about 3 kHz to about 300 GHz. The frequency of the RF power may be from about 5 MHz to about 100 MHz. The frequency of the RF power may be from about 10 MHz to about 20 MHz.

[0226] Additionally, the RF power may be from about 400 W to about 3000 W. The RF power may be from about 500 W to about 2000 W.

[0227] In addition, in the deposition process of the amorphous carbon, the introduction flow rate of the acetylene gas may be from about 100 sccm to about 3000 sccm. In addition, in the deposition process of the amorphous carbon, hydrogen gas may be supplied into the chamber together with the acetylene gas at a flow rate of from about 100 sccm to 3000 sccm.

[0228] Additionally, in the deposition process of the amorphous carbon to form the sacrificial pattern (731), the process time may be about 10 seconds to about 1000 seconds.

[0229] Thereafter, as illustrated in FIG. 11, a second mold layer is formed on the first mold layer and the sacrificial pattern (731). The second mold layer may include a second mold insulating layer (721) and a second mold sacrificial film. The second mold insulating layer (721) and the second mold sacrificial film may be alternately laminated.

[0230] The second mold insulating layer (721) and the second mold sacrificial layer (722) may include silicon oxide, silicon nitride, or silicon oxynitride. The second mold sacrificial layer (722) may have etch selectivity with respect to the second mold insulating layer (721). For example, the second mold insulating layer (721) may include silicon oxide, and the second mold sacrificial layer (722) may include silicon nitride.

[0231] Thereafter, as illustrated in FIG. 12, a second hole (723) is formed in the second mold layer (720). The second hole (723) may be formed by a photolithography process or the like. The second hole (723) may penetrate the second mold layer (720). The second hole (723) may be formed to correspond to the first hole (713). That is, the first hole (713) and the second hole (723) may be connected to each other.

[0232] Thereafter, as illustrated in FIG. 13, the sacrificial pattern (731) can be selectively removed. The sacrificial pattern (731) can be removed by a wet etching process. Since the sacrificial pattern (731) has high etching selectivity with respect to the first mold layer (710) and the second mold layer (720), it can be selectively removed.

[0233] The sacrificial pattern (731) is removed, so that a through hole (740) including the first hole (713) and the second hole (723) can be formed in the first mold layer (710) and the second mold layer (720). That is, the through hole can be formed by connecting the first hole (713) and the second hole (723) to each other.

[0234] Thereafter, referring to FIG. 14, a data storage layer (750) and a semiconductor layer (760) are formed inside the through hole (740).

[0235] The data storage layer (750) may be formed by being deposited on the inner surface of the through hole (740). The data storage layer (750) may be arranged along the profile of the inner surface of the through hole (740). The data storage layer (750) may be laminated along the profile of the inner surface of the through hole (740). The data storage layer (750) may have a high dielectric constant. The data storage layer (750) may include silicon oxide, silicon nitride, or silicon oxynitride.

[0236] The semiconductor layer (760) may be formed by being deposited on the data storage layer (750). The semiconductor layer (760) may be arranged along the profile of the exposed surface of the data storage layer (750). The semiconductor layer (760) may be laminated along the profile of the exposed surface of the data storage layer (750). The semiconductor layer (760) may include a semiconductor material such as single crystal silicon, polycrystalline silicon, an organic semiconductor material, or a carbon nanomaterial.

[0237] Additionally, a gap fill material (770) may be filled inside the semiconductor layer (760).

[0238] The semiconductor layer (760) above can be used as a channel in a semiconductor device according to an embodiment. The semiconductor layer (760) can be used as a channel of a non-volatile memory device such as a NAND flash.

[0239] Referring to FIGS. 15 to 18, in order to manufacture a semiconductor device according to one embodiment, the following process may be performed.

[0240] As illustrated in FIG. 15, in order to manufacture a semiconductor device according to an embodiment, a first active pattern (810) and a second active pattern (820) may be formed on a semiconductor substrate (600). The first active pattern (810) and the second active pattern (820) may be spaced apart from each other.

[0241] The first active pattern (810) and the second active pattern (820) may be protruded on the semiconductor substrate (600). The first active pattern (810) and the second active pattern (820) may be formed by etching a portion of the semiconductor substrate (600). The first active pattern (810) and the second active pattern (820) may be epitaxial films formed on the semiconductor substrate (600).

[0242] The first active pattern (810) and the second active pattern (820) can be used as channels of a semiconductor device according to an embodiment. The first active pattern (810) and the second active pattern (820) can be used as channels of a field effect transistor formed in a logic device.

[0243] As illustrated in FIG. 16, a first gap-fill layer (831) covering the first active pattern (810) and the second active pattern (820) is formed. The first gap-fill layer (831) may cover the first active pattern (810) and the second active pattern (820). The first gap-fill layer (831) may cover side surfaces of the first active pattern (810) and the second active pattern (820). The first gap-fill layer (831) may include amorphous carbon.

[0244] The first gap fill layer (831) may be formed by acetylene gas supplied from the acetylene supply device. Using the acetylene gas, the first gap fill layer (831) may be formed by a chemical vapor deposition process.

[0245] As illustrated in Fig. 17, a second gap fill layer (832) is formed on the first gap fill layer (831). The second gap fill layer (832) can be filled in the space between the first active pattern (810) and the second active pattern (820).

[0246] The second gap fill layer (832) may be formed by acetylene gas supplied from the acetylene supply device. Using the acetylene gas, the second gap fill layer (832) may be formed by a chemical vapor deposition process. The second gap fill layer (832) may include amorphous carbon.

[0247] Accordingly, a gap fill insulating layer (830) including the first gap fill layer (831) and the second gap fill layer (832) is formed.

[0248] As illustrated in FIG. 17, the gap fill insulating layer (830) may undergo an etch back process.

[0249] As the above etch back process is performed, the gap fill insulating layer (830) can be adjusted to have a predetermined thickness.

[0250] The first gap fill layer (831) and the second gap fill layer (832) are formed by acetylene gas included in the acetylene solution according to the embodiment. Accordingly, the first gap fill layer (831) and the second gap fill layer (832) can densely fill fine gaps.

[0251] Since the solvent has an appropriate Henry's constant, it can appropriately dissolve the acetylene. Accordingly, the composition for manufacturing a semiconductor device according to the embodiment can include an improved content of the acetylene. In addition, the composition for manufacturing a semiconductor device according to the embodiment can supply high-purity acetylene to a semiconductor device manufacturing process for forming an amorphous carbon film.

[0252] Additionally, the solvent may have an appropriate vapor pressure. Accordingly, the composition for manufacturing a semiconductor device according to the embodiment may include an enhanced amount of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiment may supply high-purity acetylene to a semiconductor device manufacturing process for forming an amorphous carbon film.

[0253] Additionally, the solvent may have an appropriate boiling point. Accordingly, the composition for manufacturing a semiconductor device according to the embodiment may include an enhanced amount of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiment may supply high-purity acetylene to a semiconductor device manufacturing process for forming an amorphous carbon film.

[0254] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may contain water in an appropriate amount.

[0255] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may contain carbon dioxide in an appropriate amount.

[0256] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include oxygen gas in an appropriate amount.

[0257] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include nitrogen gas in an appropriate amount.

[0258] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include hydrogen gas in an appropriate amount.

[0259] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include a hydrocarbon gas excluding acetylene in an appropriate amount.

[0260] Additionally, the composition for manufacturing a semiconductor device according to the embodiment may include a metal in an appropriate amount.

[0261] Accordingly, the composition for manufacturing a semiconductor device according to the embodiment can supply acetylene having a composition suitable for a semiconductor process for forming an amorphous carbon film. Accordingly, the composition for manufacturing a semiconductor device according to the embodiment can provide a semiconductor device with fewer defects.

[0262] Additionally, the semiconductor device manufacturing device according to the embodiment may include a filter unit. Accordingly, the semiconductor device manufacturing device according to the embodiment can effectively remove fine particles derived from the porous filler.

[0263] Accordingly, the semiconductor device manufacturing device according to the embodiment can provide a semiconductor device with fewer defects.

[0264] Furthermore, the features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to just one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified to implement other embodiments by those skilled in the art to which the embodiments pertain. Therefore, the contents related to such combinations and modifications should be construed as being included within the scope of the present invention.

[0265] Although the above description focuses on examples, these are merely examples and do not limit the present invention. Those skilled in the art will appreciate that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present invention. For example, each component specifically shown in the examples can be modified and implemented. In addition, differences related to such modifications and applications should be construed as being included within the scope of the present invention defined in the appended claims.

[0266] Manufacturing example

[0267] Acetylene (Merk product)

[0268] Tris(N,N-tetramethylene)phosphonic acid triamide (TPPA, CAS No. 6415-07-2, Sigma-Aldrich)

[0269]

[0270] Trimethyl phosphite (TMP, CAS No. 121-45-9, Sigma-Aldrich)

[0271]

[0272] Triethyl phosphate (TEP, CAS No. 78-40-0, Sigma-Aldrich)

[0273]

[0274] γ-Butyrolactone (GBL, CAS No. 96-48-0, Sigma-Aldrich)

[0275]

[0276] Acetone (Kumho P&B product)

[0277] As shown in Tables 1 and 2 below, the content of each ingredient in each raw material was derived based on weight.

[0278] Distinctive substances (ppm)Carbon monoxide (ppm)Carbon dioxide (ppm)Oxygen gas (ppm)Nitrogen gas (ppm)Acetylene121112671144TPPA0.0261346736TMP0.391115632TEP0.028913211GBL0.08131172613Acetone9171418226

[0279] Metal (ppm) Hydrogen Gas (ppm) CH4 (ppm) C2H4 (ppm) C3H8 (ppm) Acetylene 0.23 1236 737 TPPA 0.97 159 171621 TMP 0.87 211 151419 TEP 0.82 247 161626 GBL 0.71 153 18 1719 Acetone 0.88 2642 12526

[0280] Acetylene storage device #1 to #4 Stainless steel containers of about 50 liters were filled with zeolite, TPPA, TMP, TEP and GBL, and at a pressure of 300 psi, the acetylene was filled.

[0281] Example 1

[0282] Acetylene storage device #1 with TPPA applied was connected to a plasma chemical vapor deposition chamber. A HEPA filter was installed between the deposition chamber and the acetylene storage device. Thereafter, a silicon wafer having a silicon oxide layer formed thereon was placed in the deposition chamber through the acetylene supply device. Thereafter, acetylene was introduced into the deposition chamber at a flow rate of about 3000 sccm, nitrogen gas was introduced at a flow rate of about 500 sccm, and helium was introduced at a flow rate of about 300 sccm. Thereafter, a low frequency of about 100 kHz was supplied at an output of about 500 W, and a high frequency of about 30 MHz was supplied at an output of about 1000 W to the deposition chamber. In addition, the pressure within the deposition chamber was about 10 Torr, and the temperature within the deposition chamber was about 300°C. Accordingly, an amorphous carbon layer was formed on the silicon wafer.

[0283] Examples 2 to 4 and Comparative Examples

[0284] Acetylene storage devices #2 to #4, each using trimethyl phosphite, triethyl phosphate and γ-butyrolactone as solvents, were used to form amorphous carbon layers.

[0285] Evaluation example

[0286] 1. Solvent elution amount

[0287] At a temperature of approximately 20°C, acetylene was eluted from the acetylene supply device at atmospheric pressure and captured. Thereafter, the captured acetylene was analyzed by gel permeation chromatography, and the residual solvent content within the captured acetylene was measured based on the total weight.

[0288] 2. Moisture content in the solvent

[0289] The moisture content in the solvent was measured by the Karl Fischer method.

[0290] 3. Dissolved gas content in the solvent

[0291] The solvent was heated and measured by gas chromatography.

[0292] 4. Number of defects in amorphous carbon layer

[0293] The number of carbon layer surface defects was measured using TEM (JEM-F200, JEOL).

[0294] As shown in Table 3 below, the solvent elution amount and number of defects according to the examples were measured.

[0295] Classification Acetylene storage device Solvent Solvent release amount (wt%) Number of defects Example 1 #1TPPA 0.08 Not detected Example 2 #2TMP 0.147 Not detected Example 3 #3TEP 0.003 Not detected Example 4 #4GBL 0.013 Not detected Comparative example #5 Acetone 2 detected

[0296] As shown in Table 3 above, the solvent and semiconductor device manufacturing method according to the embodiments can provide a semiconductor device with fewer defects.

Claims

1. A step of preparing a composition comprising acetylene and a solvent for dissolving the acetylene; A step of introducing acetylene eluted from the above composition into a chamber; and An amorphous carbon film is formed on a semiconductor substrate using acetylene introduced into the chamber, A method for manufacturing a semiconductor device, wherein the solvent is at least one selected from the group consisting of triethyl phosphate, trimethyl phosphate, tris(N,N-tetramethylene)phosphonic acid triamide, and γ-butyrolactone.

2. In the first paragraph, an etching target layer is disposed between the semiconductor substrate and the amorphous carbon film, A method for manufacturing a semiconductor device, wherein the etching target layer further includes a step of etching the amorphous carbon film using the amorphous carbon film as a hard mask layer.

3. In the first paragraph, a hole is arranged on the semiconductor substrate, A method for manufacturing a semiconductor device in which the above amorphous carbon film fills the hole.

4. In the first paragraph, a pattern is included on the semiconductor substrate, The above amorphous carbon film is a method for manufacturing a semiconductor device covering the pattern.

5. A method for manufacturing a semiconductor device in accordance with claim 1, wherein the solvent has a Henry's constant of more than 0.25 mol / (ℓ·atm) at room temperature with respect to the acetylene.

6. In paragraph 1, A method for manufacturing a semiconductor device, wherein the solvent has a vapor pressure of less than 500 Pa at 20°C.

7. In paragraph 1, A method for manufacturing a semiconductor device comprising less than 2000 ppm of water based on the total weight of the composition.

8. A method for manufacturing a semiconductor device, comprising less than 1000 ppm of carbon dioxide based on the total weight of the composition, in accordance with paragraph 1.

9. A method for manufacturing a semiconductor device, comprising less than 1000 ppm of oxygen gas based on the total weight of the composition, in accordance with paragraph 8.

10. In paragraph 9, containing less than 1000 ppm of nitrogen gas based on the total composition weight, A method for manufacturing a semiconductor device comprising less than 2000 ppm of hydrogen gas based on the total composition weight.

11. A method for manufacturing a semiconductor device, wherein in the step of forming the amorphous carbon film in the first paragraph, the temperature within the chamber is 500°C to 600°C, the flow rate of the acetylene supplied within the chamber is 100 sccm to 3000 sccm, and 100 sccm to 3000 sccm of hydrogen gas is supplied within the chamber together with the acetylene.

12. A method for manufacturing a semiconductor device, comprising less than 1000 ppm of a hydrocarbon gas other than acetylene based on the total weight of the composition in claim 11.

13. A method for manufacturing a semiconductor device, comprising less than 1 ppm of a metal based on the total weight of the composition, in claim 12.

14. Courage; A porous filler placed within the container; and Containing a composition to be injected into the container, The above composition solvent; and Contains acetylene dissolved in the above solvent, A semiconductor device manufacturing device, wherein the solvent is at least one selected from the group consisting of triethyl phosphate, trimethyl phosphate, tris(N,N-tetramethylene)phosphonic acid triamide, and γ-butyrolactone.

15. A semiconductor device manufacturing apparatus further comprising a filter unit connected to the container and filtering acetylene emitted from the container in the 14th paragraph.

16. A composition for manufacturing a semiconductor device, comprising: acetylene; and a solvent for dissolving the acetylene, wherein the solvent is at least one selected from the group consisting of triethyl phosphate, trimethyl phosphate, tris(N,N-tetramethylene)phosphonic acid triamide, and γ-butyrolactone.

17. A composition for manufacturing a semiconductor device, comprising less than 1000 ppm of carbon dioxide based on the total weight of the composition, in accordance with claim 16.

18. A composition for manufacturing a semiconductor device, comprising less than 1000 ppm of carbon dioxide based on the total weight of the composition, in accordance with claim 17.

19. In paragraph 18, containing less than 1000 ppm of oxygen gas based on the total composition weight, Contains less than 1000 ppm of nitrogen gas based on the total composition weight, A composition for manufacturing a semiconductor device, comprising less than 2000 ppm of hydrogen gas based on the total weight of the composition.

20. A composition for manufacturing a semiconductor device, comprising less than 1 ppm of a metal based on the total weight of the composition, in claim 19.

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