Sensor chip structure, related device, and manufacturing method

Abstract

A sensor chip structure (600) design based on a solid-state quantum spin sensing system, a manufacturing method, and a supporting related device. The sensor chip structure (600) is a diamond-based magnetic field and temperature sensing chip manufactured on the basis of a micro-nano processing technique, and comprises: a microwave radiation structure, a diamond NV center material, a laser diode, a heat dissipation structure, an optical filter (7), and a photodetector (6) which are manufactured on an insulating substrate.

Description

Sensor chip structure, related device and manufacturing method TECHNICAL FIELD

[0001] The present application relates to the field of solid-state quantum spin sensing technology, in particular to a sensor chip structure design based on a solid-state quantum spin sensing system, a manufacturing method and a related device matched therewith. BACKGROUND

[0002] Solid-state spin system is an important part of quantum sensing system. Compared with other systems, the solid-state spin system has good scalability and processability, and can realize quantum state regulation and reading at room temperature. Laser and microwave can be used to realize quantum state preparation and regulation, and the quantum state information related to external physical quantities can be measured based on optical detection magnetic resonance (ODMR) technology. In some cases, the solid-state spin quantum sensor still has the problems of low integration, large volume and high power consumption, which limits the further improvement of the performance of the sensor and the expansion of the application scenarios.

[0003] With the development of design, processing, manufacturing, measurement and control technology of micron / nanometer materials, and the development of semiconductor lasers, miniaturized and integrated quantum sensors based on technology are the future development trend, and will further play the application potential and value of solid-state quantum sensing technology. In view of this, the present application plans to propose corresponding solutions to solve the problem of miniaturization and integration of quantum sensors.

[0004] SUMMARY

[0005] The present application provides a sensor chip structure design based on a solid-state quantum spin sensing system, a manufacturing method and a related device matched therewith. The solid-state quantum spin sensor chip combines the advantages of low cost, small volume and other advantages of the sensor with the performance advantages of high sensitivity and large range of the solid-state quantum spin sensor. The present application also provides a processing and manufacturing method of the solid-state quantum sensor chip based on micro-nano processing technology.

[0006] To achieve the above object, the application provides a sensor chip structure, comprising a first substrate, a microwave antenna, a solid-state spin sensitive material, a light source, a heat sink, a photodetector, a filter, a second substrate and an electrode structure, the microwave antenna is arranged on the surface layer of the first substrate; the solid-state spin sensitive material is installed on the surface of the microwave antenna; the light source is used to generate excitation laser to force the solid-state spin sensitive material to generate photoluminescence; the heat sink is used for heat dissipation of the light source; the photodetector is used to collect the photoluminescence and convert it into an electrical signal; the filter is located between the photodetector and the solid-state spin sensitive material, and is used to filter useless light signals other than the photoluminescence; the second substrate is bonded with the first substrate from top to bottom to form a whole, and a first window and a second window are formed between the two, the first window sequentially contains the filter, the solid-state spin sensitive material and the microwave antenna from top to bottom; the second window is used to install the heat sink and the light source, and a light path for transmitting excitation laser is left between the second window and the first window; the electrode structure is arranged on the first substrate and the second substrate, and is used for conducting electricity for the light source and the photodetector.

[0007] The application further provides a quantum sensing chip module, comprising the sensor chip structure as described above; a packaging member for packaging the sensor chip structure; and a PCB circuit board for assembling with the packaging member.

[0008] The application further provides a sensing system, applying one or more quantum sensing chip modules as described above, and further comprising a data processing module and a quantum control module, the data processing module being used for data processing and system control, and the quantum control module being used for controlling the quantum sensing chip module.

[0009] The application further provides a manufacturing method for forming the aforementioned sensor chip structure, comprising: arranging an induction structure on a first substrate, comprising a microwave antenna and a solid-state spin sensitive material above the microwave antenna; forming a containing cavity on a second substrate, and installing a triggering structure and a collecting structure in the containing cavity, the triggering structure comprising a light source and a heat sink, and the collecting structure comprising a photodetector and a filter on the light input side of the photodetector; and integrating the first substrate and the second substrate by wafer bonding process, and configuring the light output side of the light source to face the side surface of the solid-state spin sensitive material, and configuring the light input side of the photodetector to face the top surface of the solid-state spin sensitive material.

[0010] Compared with the prior art, the beneficial effects of the present application are that the present application integrates multiple different component structures in the solid-state spin sensing system into a millimeter or sub-millimeter chip structure through a micro-nano processing technology, greatly reducing the size of the solid-state spin sensor. The highly integrated side light source excitation and collection structure improves the laser excitation and fluorescence collection efficiency, greatly reduces the laser power consumption compared with the prior art, and improves the detection sensitivity. The on-chip heat dissipation structure design takes into account the improvement of heat dissipation effect and the reduction of device size, improves the light power stability of the laser light source and the quantum sensing performance. BRIEF DESCRIPTION OF DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed for the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0012] Fig. 1 is a first structure schematic diagram of the sensor chip structure in the present application embodiment 1;

[0013] Fig. 2 is a structure schematic diagram of the microwave antenna and the first substrate in the present application embodiment 1;

[0014] Fig. 3 is a second structure schematic diagram of the sensor chip structure in the present application embodiment 1;

[0015] Fig. 4 is a third structure schematic diagram of the sensor chip structure in the present application embodiment 1;

[0016] Fig. 5 is a fourth structure schematic diagram of the sensor chip structure in the present application embodiment 1;

[0017] Fig. 6 is a structure schematic diagram of the solid-state spin sensitive material in the present application embodiment 1;

[0018] Fig. 7 is another structure schematic diagram of the solid-state spin sensitive material in the present application embodiment 1;

[0019] Fig. 8 is a structure schematic diagram of the quantum sensing chip module in the present application embodiment 2;

[0020] Fig. 9 is a module schematic diagram of the sensing system in the present application embodiment 2;

[0021] Fig. 10 is a specific example schematic diagram of the sensing system in the present application embodiment 2;

[0022] Fig. 11 is a structure schematic diagram of the quantum sensing chip module in the present application embodiment 3;

[0023] Fig. 12 is another structure schematic diagram of the quantum sensing chip module in the present application embodiment 3;

[0024] Figure 13 is a flow chart of a method for manufacturing a sensor chip structure according to an embodiment of the present application.

[0025] Reference signs: first substrate 1, microwave antenna 2, solid-state spin sensitive material 3, light source 4, heat sink 5, photodetector 6, optical filter 7, second substrate 8, accommodating cavity 81, second window 9, first window 10, light path 11, package 12, PCB circuit board 13, integrated circuit 14, third substrate 15, positive and negative pins 21, cross section 31, non-working surface 32, top surface 33, lower side cavity 101, upper side cavity 102, first reflective medium 103, quantum sensor chip module 100, microwave module 200, phase-locked amplifier 300, data processing module 400, power supply module 500, sensor chip structure 600, quantum control module 700. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0027] Embodiment 1

[0028] Referring to Figure 1, the present embodiment discloses a sensor chip structure 600, which comprises a first substrate 1, a microwave antenna 2, a solid-state spin sensitive material 3, a light source 4, a heat sink 5, a photodetector 6, an optical filter 7, a second substrate 8, and an electrode structure.

[0029] In the present embodiment, the first substrate 1 and the second substrate 8 are preferably silicon wafer substrates, and can also be substrates of materials such as sapphire and silicon carbide.

[0030] In the present embodiment, the microwave antenna 2 is arranged on the surface layer of the first substrate 1, and in a preferred design, is manufactured on the surface of the first substrate 1 by etching process. In addition, as shown in Figure 2, the microwave antenna 2 has positive and negative pins 21 extending to the edge of the first wafer 1, so as to facilitate loading of microwave signals.

[0031] In this case, the solid-state spin-sensitive material 3 is installed on the surface of the microwave antenna 2, which can be a diamond block containing nitrogen vacancy color centers or germanium vacancy color centers or silicon vacancy color centers, or a silicon carbide block containing silicon-carbon divacancy color centers or silicon vacancy color centers, or a hexagonal boron nitride block containing boron vacancy color centers, and in some preferred embodiments, the solid-state spin-sensitive material 3 is a diamond block containing ensemble NV color centers with a size of not more than 1 mm; in some designs, the solid-state spin-sensitive material 3 can be bonded on the microwave antenna 2 through a die bonding process.

[0032] In this case, the light source 4 is used to generate excitation laser to force the solid-state spin-sensitive material 3 to generate photoluminescence, and since the present application aims to design a millimeter or micrometer level sensing structure, the size of each component should also belong to the millimeter or micrometer level, and therefore in the preferred embodiment, the light source 4 is selected as a laser chip (of course, it can also be a required LED) with a size of not more than 1 mm; in the exemplary embodiment, if the solid-state spin-sensitive material 3 is a diamond block containing ensemble NV color centers, the light source 4 is selected as a laser chip emitting green light (with a wavelength of about 532 nm).

[0033] In this case, the heat sink 5 is used for heat dissipation of the light source 4, and in the specific implementation, the heat sink 5 is as close as possible to the light source 4 and has as large a contact area as possible, and the heat sink 5 is preferably made of copper; regarding the installation of the heat sink 5, as shown in FIG. 3, it can be fully covered without leaking the surface in the air, but as preferred, the heat sink 5 includes an unobstructed outer heat dissipation surface, specifically as shown in the left side of the heat sink 5 in FIG. 1; no matter which installation method is adopted for the heat sink 5, it is known that a heat dissipation copper sheet should also be designed on the first substrate 1 or the second substrate 8, and the heat sink 5 contacts or is close to the copper sheet, and the heat sink 5 also needs to dissipate heat through the copper sheet; for example, the copper sheet is designed on the top surface of the first substrate 1, and the bottom surface of the heat sink 5 contacts the copper sheet, and the copper sheet should also not interfere with other structures such as the microwave antenna 2, the electrode structure, etc.; for some aesthetic or other requirements, it is preferred that the heat sink does not protrude from the side surface of the substrate.

[0034] In this case, the photodetector 6 is used to collect the photoluminescence, which can be a PN junction photodiode, a PIN junction photodiode, an avalanche diode, a Schottky junction photodiode, etc., and in the present application, the first window 10 penetrates through the upper and lower surfaces of the second substrate 8, and the photodetector 6 is covered on the top surface of the first window 10 (as shown in FIG. 1), or partially immersed in the first window 10 (as shown in FIG. 4), or fully immersed in the first window 10 (the structure is similar to the partially immersed case, which is easy to understand and will not be explained in the drawing).

[0035] In the present example, the optical filter 7 is located between the photodetector 6 and the solid-state spin-sensitive material 3, for filtering out unwanted light signals other than the photoluminescence, the so-called unwanted light signals mainly being the excitation laser and some stray light. In the exemplary scheme, the solid-state spin-sensitive material 3 is a bulk diamond containing an ensemble of NV centers, the excitation laser is green light, and the photoluminescence is red light. In this case, the function of the optical filter 7 is to allow only the red light to pass through. Preferably, the thickness of the optical filter 7 is not greater than 1 mm, which can be immersed in the first window 10.

[0036] In the present example, the second substrate 8 is bonded with the first substrate 1 from top to bottom to form an integrated body, and a first window 10 and a second window 9 are formed between the two. In the first window 10, the optical filter 7, the solid-state spin-sensitive material 3, and the microwave antenna 2 are sequentially accommodated from top to bottom. In the second window 9, the heat sink 5 and the light source 4 are installed. The second window 9 and the first window 1 leave a light path 11 (such as a channel) for transmitting the excitation laser. The structure of the first window 10 and the second window 9 mentioned in the present example has diversity. For example, in the structure described based on FIG. 1, the second window 9 also has a gas port penetrating the side of the integrated substrate, while in the structure described based on FIG. 3, the second window 9 does not have a gas port. The aforementioned light path 11 can also be a virtual concept (referring to the path between the excitation laser leaving the light source 4 and entering the solid-state spin-sensitive material 3). The first window 10 and the second window 9 can be the same cavity without distinction, and all the corresponding components can also be in the same cavity.

[0037] In the chip structure, the design of the electrode structure is essential. In the present example, the electrode structure can be provided on the first substrate 1 and / or the second substrate 8 for conducting electricity for the light source 4 and the photodetector 6. The design of the electrode structure is relatively conventional, and will not be specifically introduced here. There are various possible layout modes.

[0038] For the convenience of understanding some concepts, the first window 1 is split in the present example, as shown in FIG. 5. The first window 1 is divided into an upper cavity 102 and a lower cavity 101. The upper cavity 102 is used to install the optical filter 7, and the solid-state spin-sensitive material 3 is located in the middle of the lower cavity.

[0039] In some preferred embodiments, the design of the present example can be compatible with the various possible schemes described above, i.e., the cavity side of the lower cavity 101 is provided with a first light-reflecting medium 103. The purpose of this design is mainly to reduce the reflection loss of the light signal, improve the excitation efficiency of the excitation laser, and improve the collection efficiency of the photoluminescence. The material of the first light-reflecting medium 103 only needs to have higher reflectivity relative to the substrate. In a preferred design, the first light-reflecting medium 103 is a gold film or a silver film or a copper film, which is applied to the cavity side by a plating process.

[0040] In some other preferred embodiments, the design of the application in this embodiment can exist compatibly with the various possible schemes described above, i.e., the cross-sectional area of the lower cavity 101 gradually increases from bottom to top, and the purpose of this design is to reduce the reflection loss of photoluminescence, so that more photoluminescence can be collected by the photodetector 6. As for the shape of the lower cavity 101, the application does not make specific limitations, which can be circular, square, or parabolic, etc. In order to improve the light utilization efficiency, it is desirable to optimize the design of the side angle of the lower cavity 101, but based on the variety of shapes of the lower cavity 101, it is difficult to design generally, and the application preferably has a circular or square shape, and the side angle with the surface of the first substrate 1 (the angle between the generatrix and the surface of the first substrate 1 for the circular lower cavity) is 35°-85°.

[0041] Considering that the transmission loss of light in vacuum is smaller, in some preferred embodiments, the design of the application in this embodiment can exist compatibly with the various possible schemes described above, i.e., the first window 10 is a vacuum cavity as a whole, or the part of the first window 10 located below the optical filter is a vacuum cavity, i.e., the lower cavity 101 is a vacuum cavity. Based on the requirement of the vacuum cavity, the sealing design requirement between the optical filter, the photodetector, the substrate, the heat sink, etc. is a conventional design, which will not be repeated here.

[0042] Here, some necessary structures in the aforementioned sensor chip structure are supplemented, i.e., the sensor chip structure should include some electrode pins, which can also be copper sheets arranged on the substrate. In an exemplary scheme, at least the electrode structure and the input / output electrode pins of the photodetector 6, the power supply input / output electrode pins of the circuit, the input / output electrode pins of the photodetector 6, the positive / negative electrode pins of the microwave antenna 2, the positive and negative pins 21 of the microwave antenna 2, and the access / output electrode pins of the light source 4 are included. Of course, the above is the minimum electrode pin design scheme, and the actual number and position of the electrode pins can be designed according to the requirements.

[0043] Considering that the light beam emitted by the light source 4 has a certain diffusivity, which will collide and reflect with the inner wall of the light path 11, which will undoubtedly cause a part of the light loss. In order to optimize this problem, in some preferred embodiments, some light-reflecting materials will be arranged on the inner wall of the light path 11 to improve the reflection efficiency of the inner wall to light and reduce light loss. As for the light-reflecting material, it is preferably gold-plated or silver-plated or silver-plated, and of course the minimum requirement is that the light-reflecting material only needs to have higher reflection efficiency relative to the inner wall of the light path 11.

[0044] In the foregoing various embodiments, the solid-state spin-sensitive material 3 is always the most important part, and the excitation effect of its quantum effect directly affects the measurement accuracy. The excitation degree of the excitation laser to the solid-state spin-sensitive material 3 directly affects the effect of generating photoluminescence. The longer the contact time and the more sufficient the contact between the excitation laser and the solid-state spin-sensitive material 3, the higher the measurement accuracy. Based on this, it is necessary to optimize the design in this direction.

[0045] In some preferred embodiments, the inventive design in this embodiment can exist compatible with the foregoing various possible schemes. As shown in FIG. 6, the solid-state spin-sensitive material 3 is a cube with a bevel angle or a cuboid with a bevel angle and square upper and lower faces. The bevel angle is 30°-60°, and the bevel angle forms a section 31. The excitation laser enters the solid-state spin-sensitive material 3 at the section 31. The bevel angle refers to the included angle between the end face 31 and the adjacent face (the side face of the solid-state spin-sensitive material 3), that is, the bevel angle a in FIG. 6.

[0046] Of course, it is not enough to only consider the structural design of the solid-state spin-sensitive material 3 itself. A suitable laser incidence angle is also needed to obtain a better excitation effect. For the setting of the laser incidence angle, in the implementation, different feedback fluorescence is obtained by continuously modulating the incidence angle, and the laser incidence angle is determined according to the best feedback fluorescence. When the size of the bevel angle is different, different optimal laser incidence angles will also be produced. In this application, as a preferred design, a solid-state spin-sensitive material 3 with a bevel angle of 45° is made. After testing, the better laser incidence angle should satisfy that the included angle (that is, the included angle b in FIG. 6) between the excitation laser and the normal line of the section 31 is 2°-20°, and the preferred included angle b is 15°.

[0047] In addition, if the efficiency of total reflection is not considered, only the penetration effect of the excitation laser at the interface of the irradiated surface is considered, that is, the waste of the excitation laser reflected at the irradiated surface is reduced. In the preferred embodiment, the included angle between the excitation laser and the normal line of the irradiated surface of the solid-state spin-sensitive material is 1°-25°.

[0048] The foregoing solid-state spin-sensitive material 3 is only a preferred design. In fact, the upper and lower faces of the solid-state spin-sensitive material 3 can also be rectangular as shown in FIG. 7, and can also be other polygons (such as triangles or pentagons, etc.).

[0049] As to the solid-state spin sensitive material 3, there is still a further optimization design, as shown in FIG. 6, the light source 4 emits 532 nm excitation light into the solid-state spin sensitive material 3 from the section 31, irradiates the internal NV color center, and makes it generate red fluorescence, which is emitted in all directions. In order to ensure that the fluorescence is transmitted from the top surface 33 as much as possible and is perceived by the photodetector above the top surface 33, the non-working surface 32 of the solid-state spin sensitive material 3 is partially or entirely provided with a light-reflecting material. Specifically, the non-working surface 32 does not include the section 31 and the top surface 33 (the fluorescence needs to be received by the photodetector from the top surface 33, so it does not need to be shielded). In the exemplary scheme in which the entire non-working surface 32 is provided with a light-reflecting medium, taking a cuboid structure as an example, it means that the four side surfaces and the bottom surface are all provided with a light-reflecting medium. In the exemplary scheme in which the non-working surface 32 is partially provided with a light-reflecting medium, it means that only part of the four side surfaces and the bottom surface are provided with a light-reflecting medium, such as only the bottom surface is coated with a light-reflecting medium, which can effectively reduce the light loss caused by the surface.

[0050] In combination with the foregoing description, it can be understood that the present application aims to design a chip-level quantum sensor device to solve the problems of large volume, large power consumption and low sensitivity of existing solid-state spin sensors. Based on wafer-level process and stacking design of miniaturized structure, the miniaturized design of the solid-state spin sensor can be realized, and the excitation and collection mode of near-distance spatial light also eliminates the light loss problem caused by redundant light paths, so that high-precision measurement can be realized without a large-power light source, the power consumption of the sensor is reduced, and the measurement sensitivity is improved. In order to obtain better measurement effect, the present application proposes that the distance between the solid-state spin sensitive material 3 and the photodetector 6 (the distance refers to the distance between the top surface 33 of the solid-state spin sensitive material 3 and the collection surface of the photodetector 6) is not greater than 1 mm, and the distance between the light source 4 and the solid-state spin sensitive material 3 (the distance refers to the straight line path length from the light source to the first contact with the solid-state spin sensitive material 3) is not greater than 1 mm. If the distance between the solid-state spin sensitive material 3 and the photodetector 6 is too large, the fluorescence reception loss will be increased, and a distance of not less than 700 um can obtain better measurement effect, and a distance of ≥100 um is used for arranging the optical filter 7, and a distance of less than 100 um will undoubtedly increase the processing and installation difficulty, therefore, in a more preferred scheme, the distance between the solid-state spin sensitive material 3 and the photodetector 6 is 100 um-700 um. The laser is miniaturized, and the laser intensity is limited, in order to ensure the sufficient photo-induced fluorescence effect of the diamond NV color center, the laser loss needs to be reduced as much as possible, so the shorter the distance between the light source 4 and the solid-state spin sensitive material 3 is, the better. However, if it is shorter than 10 um, the processing and installation difficulty is very high, therefore, in a more preferred scheme, the distance between the light source 4 and the solid-state spin sensitive material 3 is 10 um-500 um.

[0051] Example 2

[0052] Based on the sensor chip structure 600 mentioned in the foregoing embodiment 1, embodiment 2 proposes a quantum sensing chip module 100 integrating the sensor chip structure 600, specifically, as shown in FIG. 8, a packaging member 12 matched with the foregoing sensor chip structure 600 is additionally provided, and a PCB circuit board 13 matched with the packaging member 12 is additionally provided.

[0053] The packaging member 12 is mainly a metal packaging, which can be of the following types: TO packaging, BOX packaging, butterfly packaging, SMD packaging, large module metal packaging, passive crystal oscillator packaging, etc. Different packaging structures can be selected as needed.

[0054] Based on the foregoing, the purpose is to provide a mature device, and the quantum sensing chip module 100 is connected to the existing mature device by the design of the packaging member 12 and the PCB circuit board 13.

[0055] Regarding the detection objects of the quantum sensing chip module 100, mainly include magnetic field, temperature, electric field, etc., which is determined according to the type of the solid-state spin sensitive material 3, for example, if the solid-state spin sensitive material 3 is a diamond block containing a system of NV color centers, the detection objects of the quantum sensing chip module can at least include magnetic field, temperature, electric field.

[0056] In addition, based on the quantum sensing chip module 100 mentioned above, for the convenience of understanding, an example is introduced here, a sensing system applied with the quantum sensing chip module 100, as shown in FIG. 10, the sensing system includes one or more quantum sensing chip modules 100 as described above, a microwave module 200, a phase-locked amplifier 300 and a data processing module 400.

[0057] In this example, the microwave module 200 is configured to output a microwave signal to the microwave antenna on the quantum sensing chip module 100; regarding the microwave module 200, it at least includes a microwave source, and can also be configured with some accessories to improve the quality of the microwave signal or control the microwave signal. In an example, the microwave module 200 can include a microwave source, a microwave amplifier and a microwave circulator. The microwave source is the transmission source of the microwave signal, the microwave amplifier can amplify the microwave power, and the microwave circulator can prevent the reverse transmission of the microwave signal.

[0058] In this example, the phase-locked amplifier 300 is electrically connected to at least the microwave module 200 and the photodetector on the quantum sensing chip module 100, and the purpose is to realize the modulation of the microwave signal and the demodulation of the collected electrical signal, etc. In a preferred design, the phase-locked amplifier is a double-phase digital phase-locked loop.

[0059] In this example, the data processing module 400 is used for data processing and system control, and is configured to be electrically connected with the lock-in amplifier 400. The data processing module 400 can process the data provided by the lock-in amplifier 400 to obtain detection data. Of course, the data processing module 400 can also perform some other conventional function control operations, such as control of the microwave module 100.

[0060] In some schemes, a power supply module 500 is also added to the sensing system, which is mainly used to provide appropriate current for the light source and photodetector in the quantum sensing chip module 100.

[0061] In addition to the data processing module 400 and the quantum sensing chip module 100, the above components can be referred to as a quantum control module 700. As shown in FIG. 9, it is a general setting form of the quantum control module 700. The microwave module 200 and the lock-in amplifier 300 shown in FIG. 10 are specific examples of the quantum control module 700.

[0062] Regarding the sensing system, it has various application scenarios, such as non-destructive magnetic flux leakage detection, current size measurement, scene temperature measurement, etc.

[0063] Embodiment 3

[0064] The quantum sensing chip module 100 proposed in the foregoing embodiment 2 mainly proposes the packaging of the sensor chip structure 600, and does not integrate the signal processing and other functional modules. Therefore, when using the quantum sensing chip module with this structure, some large equipment such as a microwave source, a power supply module, and a lock-in amplifier needs to be externally matched. In order to further reduce the volume of the solid-state spin sensing device and improve the integration of the device, in embodiment 3, the foregoing quantum sensing chip module is further optimized, specifically as follows:

[0065] Based on the quantum sensing chip module 100 in the foregoing embodiment 2, as shown in FIG. 11, this example also includes an integrated circuit 14 electrically connected with the sensor chip structure 600. The integrated circuit 14 at least has a signal amplification function.

[0066] Regarding the integrated circuit 14, an indispensable function thereof is to amplify and process the electrical signal transmitted by the photodetector. In an exemplary scheme, the signal amplification unit can be used to achieve this function, and an analog-to-digital conversion unit can be matched to perform signal conversion. In addition, the integrated circuit 14 can also be designed to have a power supply control unit, which can provide controllable and stable power supply for the power-consuming units in the sensor chip structure.

[0067] In addition, regarding the structural design of the integrated circuit 14, in one scheme, as shown in FIG. 11, the integrated circuit 14 is located in the package 12, and the sensor chip structure 600 and the integrated circuit 14 are arranged on the surface of a third substrate 15. In another scheme, as shown in FIG. 12, the integrated circuit 14 can also be located outside the package 12 and is directly mounted on the PCB circuit board 13.

[0068] Based on the foregoing optimized quantum sensing chip module, the integration and functionality are more perfect. For a sensing system applying one or more quantum sensing chip modules, at least a data processing module 400 for processing and calculating the detection signal obtained by the quantum sensing chip module 100 and a data transmission module for connecting the two are needed, but specifically, the configuration of the sensing system also needs to be adapted and designed according to the function of the integrated circuit 14.

[0069] Embodiment 4

[0070] Regarding the foregoing sensor chip structure 600, embodiment 4 introduces a manufacturing method for forming the sensor chip structure 600, as shown in FIG. 13, which includes steps S1-S3. Specifically (the following takes a solid-state spin-sensitive material 3 as an example of a diamond block containing NV color centers to introduce the flow, and other types of solid-state spin-sensitive materials are similar to the following manufacturing method):

[0071] Step S1: etching a microwave antenna on the first substrate, and mounting a heat sink, a light source, and a diamond block, and bonding and connecting a light filter and a photodetector.

[0072] For example, in specific implementation, a conventional silicon wafer can be selected as the first substrate, a microwave antenna is manufactured in the middle of the top surface of the first substrate through ion sputtering metal film deposition, photolithography, and ion beam etching process, the material of the microwave antenna can be copper, two electrode pins of the microwave antenna extend to the edge of the wafer, and then a heat sink, a light source, and a diamond block are mounted on the top surface of the first substrate through a eutectic bonding process, the light output side of the light source is configured to face the side of the solid-state spin-sensitive material. Regarding the bonding connection of the light filter and the photodetector, an avalanche diode can be selected as the photodetector, and a super-thin double-color filter that can transmit red light and reflect green light is selected and bonded on the collection side of the avalanche diode.

[0073] Step S2: forming a containing cavity 81 for mounting a light source, a heat sink, a photodetector, and a light filter on the second substrate.

[0074] For example, in implementation, another conventional silicon wafer is selected as the second substrate, a filter groove with a side length of 2 mm and a depth of 500 um is first opened in the middle of the top surface of the wafer through a wafer groove digging process, then a through hole with a diameter of about 1.5 mm is opened in the middle of the groove bottom of the filter groove, a heat sink groove with a length of 3 mm, a width of 2 mm and a depth of 1.5 mm is opened on one side of the bottom surface of the wafer, and the groove has a light source mounting space of not more than 1 mm 3 , and a light path for transmitting laser light is opened between the heat sink groove and the through hole, and the length of the light path is not more than 600 um. For the production of each groove and hole, mainly use reactive ion etching, wet etching, ion sputtering, photolithography, ion beam etching and other processes.

[0075] Step S3: The first substrate and the second substrate are integrated through a eutectic bonding process, the connecting body of the optical filter and the photodetector is combined with the second substrate, and the optical filter faces the top surface 33 of the solid-state spin sensitive material.

[0076] For example, in implementation, it should be understood that the first substrate and the second substrate have corresponding electrode pin or heat dissipation copper structure, etc. After bonding, these structures should also be reasonably matched.

[0077] The above steps do not include some conventional wafer structure designs, such as forming electrode structures on the first substrate and / or the second substrate before bonding, and configuring the electrode structures to realize circuit conduction among the electrode structures, the light source and the photodetector after bonding.

[0078] Corresponding to the structure design of the foregoing some preferred sensor chip structure 600, steps S1-S3 can also add some optimization designs, such as forming a reflective surface on the side surface of the cavity adjacent to the solid-state spin sensitive material 3 through a plating process before the bonding step, preferably gold, silver, copper, etc. are used; for example, during bonding, the cavity where the solid-state spin sensitive material 3 is located is a vacuum cavity by using vacuum manufacturing technology, etc.

[0079] In the description of the present specification, the description of the terms "one embodiment", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0080] The preferred embodiments of the application disclosed above are only to facilitate the elucidation of the application. The preferred embodiments do not describe all the details of the application and limit the application to the specific embodiments. Obviously, many modifications and variations can be made in light of the teachings above. The description is chosen and described in order to provide the best illustration of the application and its practical application to those skilled in the art and to enable those skilled in the art to best utilize the application. The application is limited only by the claims and their full scope and equivalents.

Claims

1. A sensor chip structure, characterized in that, Include: First substrate (1); A microwave antenna (2) is disposed on the surface of the first substrate (1); Solid spin-sensitive material (3) is mounted on the surface of the microwave antenna (2); A light source (4) is used to generate an excitation laser that forces the solid spin-sensitive material (3) to produce photofluorescence; A heat sink (5) is used for heat dissipation of the light source (4); A photodetector (6) is used to collect the photofluorescence and convert it into an electrical signal; The filter (7) is located between the photodetector (6) and the solid spin-sensitive material (3) and is used to filter out useless light signals except for photofluorescence; The second substrate (8) is bonded to the first substrate (1) from top to bottom, and a first window (10) and a second window (9) are formed between the two. The first window (10) contains a filter (7), a solid spin-sensitive material (3) and a microwave antenna (2) from top to bottom. The second window (9) is used to install the heat sink (5) and the light source (4), and there is an optical path (11) for transmitting the excitation laser between it and the first window (10). The electrode structure, disposed on the first substrate (1) and the second substrate (8), is used to conduct electricity to the light source (4) and the photodetector (6).

2. The sensor chip structure according to claim 1, characterized in that: The solid spin-sensitive material (3) is a diamond block containing nitrogen vacancy centers, germanium vacancy centers, or silicon vacancy centers, or a silicon carbide block containing silicon-carbon double vacancy centers or silicon vacancy centers, or a hexagonal boron nitride block containing boron vacancy centers.

3. The sensor chip structure according to claim 1, characterized in that: The microwave antenna (2) is disposed on the surface of the first substrate (1) by etching.

4. The sensor chip structure according to claim 1, characterized in that: The first window (10) is divided into an upper cavity (102) and a lower cavity (101). The upper cavity (102) is used to install the filter (7), and the solid spin-sensitive material (3) is located in the middle of the lower cavity (101).

5. The sensor chip structure according to claim 4, characterized in that: The lower cavity (101) has a first reflective medium (103) on its side.

6. The sensor chip structure according to claim 4 or 5, characterized in that: The cross-sectional area of ​​the lower cavity (101) gradually increases from bottom to top.

7. The sensor chip structure according to claim 1, characterized in that: The solid spin-sensitive material (3) is a cube with a beveled corner or a cuboid with a square top and bottom surface and a beveled corner. The beveled angle is 30°-60° and the beveled corner forms a cross section (31). The excitation laser is injected into the solid spin-sensitive material (3) through the cross section (31).

8. The sensor chip structure according to claim 7, characterized in that: The oblique angle of the oblique angle is 45°, and the angle between the excitation laser and the normal of the cross section (31) is 2°-20°.

9. The sensor chip structure according to claim 7 or 8, characterized in that: The non-working surface (32) of the solid spin-sensitive material (3) is partially or entirely provided with a second reflective medium, wherein the non-working surface (32) does not include the cross-section (31) and the top surface (33).

10. The sensor chip structure according to claim 1, characterized in that: The angle between the excitation laser and the normal to the irradiated surface of the solid spin-sensitive material (3) is 1°-25°.

11. The sensor chip structure according to claim 1, characterized in that: The first window (10) penetrates the upper and lower surfaces of the second substrate (8), and the photodetector (6) covers the top surface of the first window (10) or is completely or partially submerged in the first window (10).

12. The sensor chip structure according to claim 1, characterized in that: The light source (4) is a laser chip.

13. The sensor chip structure according to claim 1, characterized in that: The optical path (11) contains a third reflective medium.

14. The sensor chip structure according to claim 1, characterized in that: The first window (10) is a vacuum cavity or the portion of the first window (10) located below the filter (7) is a vacuum cavity.

15. The sensor chip structure according to claim 1, characterized in that: The distance between the solid spin-sensitive material (3) and the photodetector (6) is no greater than 1 mm, and the distance between the light source (4) and the solid spin-sensitive material (3) is no greater than 1 mm.

16. The sensor chip structure according to claim 1, characterized in that: It also includes several electrode pins for electrical connections of the microwave antenna (2), the light source (4), the photodetector (6), and the electrode structure.

17. A quantum sensing chip module, characterized in that, Include: The sensor chip structure (600) as described in any one of claims 1-16; Package (12) for encapsulating the sensor chip structure (600); PCB circuit board (13) for assembly with the package (12).

18. The quantum sensing chip module according to claim 17, characterized in that: It also includes an integrated circuit (14) electrically connected to the sensor chip structure (600), the integrated circuit (14) having at least a signal amplification function.

19. The quantum sensing chip module according to claim 18, characterized in that: The integrated circuit (14) is located within the package (12), and both the sensor chip structure (600) and the integrated circuit (14) are disposed on the surface of the third substrate (15), or The integrated circuit (14) is located outside the package (12) and is mounted on the PCB circuit board (13).

20. A sensing system, characterized in that, The system employs one or more quantum sensing chip modules (100) as described in any one of claims 17-19, and further includes a data processing module (400) and a quantum control module (700). The data processing module (400) is used for data processing and system control; the quantum control module (700) is used for controlling the quantum sensing chip module (100).

21. A method for fabricating a sensor chip structure, characterized in that, Include: A microwave antenna (2) is etched on the first substrate (1), and a heat sink (5), a light source (4) and a diamond block are mounted on it. At the same time, the filter (7) and the photodetector (6) are bonded together. An accommodating cavity (81) for mounting a light source (4), a heat sink (5), a photodetector (6), and a filter (7) is formed on the second substrate (8); The first substrate (1) and the second substrate (8) are integrated by eutectic bonding process, and the connector between the filter (7) and the photodetector (6) is combined with the second substrate (8), with the filter (7) facing the top surface of the solid spin-sensitive material (3).

22. The method for fabricating a sensor chip structure according to claim 21, characterized in that: Before bonding, a reflective surface is formed on the cavity side adjacent to the solid spin-sensitive material (3) by a coating process.

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