Light-emitting structure and illumination device

Abstract

A light-emitting structure and an illumination device. The light-emitting structure generates a full-spectrum illumination light source, and comprises at least one light-emitting diode chip (MC), the light-emitting diode chip (MC) comprises an N-type semiconductor layer (101), a P-type semiconductor layer (104), a first light-emitting layer (103), and a second light-emitting layer (102); the first light-emitting layer (103) is located on the side of the second light-emitting layer (102) close to the P-type semiconductor layer (104); the first light-emitting layer (103) generates at least one band of light by electroluminescence; the light generated by the first light-emitting layer (103) excites the second light-emitting layer (102) to generate at least one band of light; and each band of light comprises at least one wavelength. Bands corresponding to all light generated by the light-emitting structure at least comprise a blue band, a cyan band, a green band, a yellow band, and a red band.

Description

Light-emitting structure and lighting device

[0001] This application claims priority to the Chinese patent application No. 202411153707.6, filed on August 20, 2024, with the Chinese Patent Office, the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present application relates to the field of semiconductor technology, for example to a light-emitting structure and a lighting device. BACKGROUND

[0003] Light emitting diode (LED) as a light-emitting device that converts electrical energy into light energy, has the advantages of energy saving, long service life and high luminous efficiency, and is widely used in indication, display, decoration, lighting and many other fields. At the same time, light emitting diode has shifted from the initial pursuit of high light efficiency and low cost to achieve energy saving and market penetration to the new stage of pursuing light quality and health. Healthy lighting is attracting more and more public attention, and full-spectrum lighting has become one of the important basic technologies for future healthy lighting.

[0004] Full-spectrum lighting, i.e. lighting with continuous spectral characteristics similar to sunlight. Current full-spectrum lighting is mainly achieved by packaging multiple single-wavelength light emitting diode chips and fluorescent powder together, or by packaging a single multi-wavelength light emitting diode chip and fluorescent powder together. However, the former has a large number of light emitting diode chips, high cost, complex driving mode and packaging process, and the spectrum is not continuous enough. The latter light emitting diode chip is electroluminescence (EL), and the spectrum is relatively unstable. SUMMARY

[0005] The present application provides a light-emitting structure and a lighting device, which generates a full-spectrum lighting light source, has good continuity of spectrum, and is closer to natural light. At the same time, the stability of the spectrum energy distribution with current change is good.

[0006] In a first aspect, the present application provides a light-emitting structure, which is configured to generate a full-spectrum lighting light source. The light-emitting structure comprises at least one light emitting diode chip, the light emitting diode chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, the first light-emitting layer being located on the side of the second light-emitting layer close to the P-type semiconductor layer.

[0007] The first light-emitting layer generates light of at least one waveband in an electroluminescence manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of at least one waveband. Each waveband of light comprises at least one wavelength.

[0008] The wave bands corresponding to all the light rays generated by the light-emitting structure include blue wave band, cyan wave band, green wave band, yellow wave band and red wave band.

[0009] In a second aspect, the present application provides a lighting device, which comprises a lighting lamp body, a light-emitting structure as in the first aspect, and a mosquito-repelling structure, which is arranged to generate mosquito-repelling light rays; the light-emitting structure and the mosquito-repelling structure are arranged in the same lighting lamp body or in different lighting lamp bodies. BRIEF DESCRIPTION OF DRAWINGS

[0010] Fig. 1 is a first schematic diagram of a light-emitting diode chip according to an embodiment of the present application;

[0011] Fig. 2 is a second schematic diagram of a light-emitting diode chip according to an embodiment of the present application;

[0012] Fig. 3 is a spectrum diagram of a light-emitting diode chip according to an embodiment of the present application;

[0013] Fig. 4 is a third schematic diagram of a light-emitting diode chip according to an embodiment of the present application;

[0014] Fig. 5 is a fourth schematic diagram of a light-emitting diode chip according to an embodiment of the present application;

[0015] Fig. 6 is a fifth schematic diagram of a light-emitting diode chip according to an embodiment of the present application;

[0016] Fig. 7 is a first schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0017] Fig. 8 is a second schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0018] Fig. 9 is a third schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0019] Fig. 10 is a fourth schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0020] Fig. 11 is a spectrum diagram of a light-emitting structure according to an embodiment of the present application;

[0021] Fig. 12 is a fifth schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0022] Fig. 13 is a sixth schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0023] Fig. 14 is a seventh schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0024] Fig. 15 is an eighth schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0025] Fig. 16 is a ninth schematic diagram of a light-emitting structure according to an embodiment of the present application;

[0026] FIG. 17 is a tenth schematic diagram of a light emitting structure according to embodiments of the present application;

[0027] FIG. 18 is another spectral diagram of a light emitting structure according to embodiments of the present application;

[0028] FIG. 19 is a schematic diagram of a first light emitting layer and a second light emitting layer according to embodiments of the present application;

[0029] FIG. 20 is another schematic diagram of a first light emitting layer and a second light emitting layer according to embodiments of the present application;

[0030] FIG. 21 is yet another schematic diagram of a first light emitting layer and a second light emitting layer according to embodiments of the present application;

[0031] FIG. 22 is a schematic diagram of a quantum well according to embodiments of the present application;

[0032] FIG. 23 is a schematic diagram of a multi-quantum well according to embodiments of the present application.

[0033] Legend: 101, N-type semiconductor layer; 102, second light emitting layer; 103, first light emitting layer; 104, P-type semiconductor layer; 105, color conversion layer; 106, first barrier layer; 107, second barrier layer; 201, first layer; 202, second layer; 203, barrier layer; 204, well layer. DETAILED DESCRIPTION

[0034] In related art, light emitting structures mainly have the following two packaging methods: one is to package multiple single-wavelength light emitting diode chips and fluorescent powder together, the number of light emitting diode chips is large, the cost is high, the driving method is complex, the packaging process is complex, the control is uneven, and the spectrum is not continuous enough. The other is to package a single multi-wavelength light emitting diode chip and fluorescent powder together, the light emitting diode chip is electroluminescent, the peak intensity will reverse with current change, the spectrum is relatively unstable, which may increase or even exceed the relative increase of blue light hazard.

[0035] The light emitting structure provided by the present application generates a full-spectrum illumination light source. The light emitting structure includes at least one light emitting diode chip, the light emitting diode chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light emitting layer and a second light emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, the first light emitting layer is located on the side of the second light emitting layer close to the P-type semiconductor layer. The first light emitting layer generates at least one wavelength of light in an electroluminescent manner, and the light generated by the first light emitting layer excites the second light emitting layer to generate at least one wavelength of light.

[0036] The light-emitting diode chip has two forms of electroluminescence and photoluminescence (PL), so that the light-emitting structure has stable spectrum and does not fluctuate with current. The second light-emitting layer for photoluminescence is located between the N-type semiconductor layer and the P-type semiconductor layer, which can release stress in advance, so that the external quantum efficiency (EQE) of the first light-emitting layer is improved. At the same time, the second light-emitting layer itself has good crystal quality, and can be reflected and absorbed multiple times between the N-type semiconductor layer and the P-type semiconductor layer, so that the external quantum efficiency of the second light-emitting layer is also improved, and the wavelengths generated by the first light-emitting layer and the second light-emitting layer can have higher external quantum efficiency compared with traditional LEDs.

[0037] The light-emitting diode chip includes at least one waveband and at least two different wavelengths. In this way, the waveband, the number of wavelengths, the peak wavelength and the half-peak width of each wavelength, and the light intensity ratio of different wavelengths of the light-emitting diode chip can be selected according to the needs of different color temperatures and color rendering indexes, and the continuity of the spectrum is improved. By combining a suitable packaging scheme, a full spectrum is achieved, i.e., the spectrum design of the full spectrum is not limited by traditional light-emitting diode chips, and can be closer to the solar spectrum, and the blue light is lower.

[0038] At the same time, the multi-wavelength light-emitting diode chip combining electroluminescence and photoluminescence has simple driving mode, simple packaging process, simple control mode, and low control cost, and is easy to obtain full spectrum illumination spectrum, so that the full spectrum illumination light source can emit light similar to natural light, which is similar to sunlight, the color rendering index is close to 100, and the spectrum energy distribution has good stability with current change. In addition, the size of the light-emitting diode chip and the light-emitting diode chip group can be flexibly adjusted, the cost is reduced, and the reliability and service life are improved.

[0039] The full spectrum illumination light source realized by different packaging methods at least contains light rays of blue waveband, cyan waveband, green waveband, yellow waveband and red waveband. The wavelengths of all light rays contained are sorted according to the peak wavelength, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nanometers (nm). In addition, the light rays in the red waveband include at least one of short-wave red light, medium-wave red light and long-wave red light, the short-wave red light realizes high light efficiency, the medium-wave red light realizes medium color rendering index and high light efficiency, and the long-wave red light realizes high color rendering index, which can be flexibly selected according to different needs.

[0040] In some embodiments, the light-emitting structure generates blue waveband including first wavelength blue light and second wavelength blue light. The ratio of the light power of the second wavelength blue light to the light power of the first wavelength blue light emitted by the light-emitting structure is greater than or equal to 0.5. The peak wavelength of the first wavelength blue light generated by the light-emitting structure ranges from 440±10 nm, and / or the peak wavelength of the second wavelength blue light ranges from 455±10 nm.

[0041] In yet some embodiments, the blue band generated by the light emitting structure includes a first wavelength blue light, a second wavelength blue light and a third wavelength blue light. The ratio of the light power of the second wavelength blue light to the light power of the first wavelength blue light and / or the ratio of the light power of the third wavelength blue light to the light power of the first wavelength blue light is greater than or equal to 0.5. The first wavelength blue light has a peak wavelength in the range of 440±10 nm, and / or the second wavelength blue light has a peak wavelength in the range of 455±10 nm, and / or the third wavelength blue light has a peak wavelength in the range of 470±10 nm.

[0042] The blue band included in the full spectrum illumination light source realized by different packaging modes includes at least two different wavelengths, and the second wavelength blue light is highlighted, so as to realize better spectral continuity, reduce blue light hazards, and improve light efficiency.

[0043] The embodiments of the present application will be described below with reference to the accompanying drawings. In the drawings, the same or similar notations represent the same or similar components or components having the same or similar functions throughout. The described embodiments are some embodiments related to the present application. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application. The embodiments of the present application will be described below with reference to the accompanying drawings.

[0044] The embodiments of the present application provide a light emitting structure configured to generate a full spectrum illumination light source, which can emit light similar to natural light, which is similar to sunlight, and has a color rendering index close to 100. The light emitting structure can be applied to the field of illumination, such as indoor and outdoor lighting, indoor lighting such as table lamps, and outdoor lighting such as street lamps.

[0045] For ease of description and representation, in the embodiments of the present application and the accompanying drawings, the purple band is represented by "A", the blue band is represented by "B", the cyan band is represented by "C", the green band is represented by "G", the yellow band is represented by "Y", the red band is represented by "R", and the infrared band is represented by "IR".

[0046] Referring to FIG. 1, the light emitting structure includes at least one light emitting diode chip MC, the light emitting diode chip MC including an N-type semiconductor layer 101, a P-type semiconductor layer 104, and a first light emitting layer 103 and a second light emitting layer 102 disposed between the N-type semiconductor layer 101 and the P-type semiconductor layer 104, the first light emitting layer 103 being located on a side of the second light emitting layer 102 closer to the P-type semiconductor layer 104; the first light emitting layer 103 generating light of at least one wavelength band in an electroluminescent manner, the light generated by the first light emitting layer 103 exciting the second light emitting layer 102 to generate light of at least one wavelength band, each wavelength band including at least one wavelength; all light generated by the light emitting structure corresponding to wavelength bands including a blue wavelength band, a cyan wavelength band, a green wavelength band, a yellow wavelength band, and a red wavelength band.

[0047] For example, the light emitting structure includes one or more light emitting diode chips MC, the light emitting diode chip MC being a multi-wavelength chip. The light emitting diode chip MC has at least two wavelengths, which can be located in different wavelength bands, partially located in the same wavelength band, or entirely located in the same wavelength band. The light emitting diode chip MC can have a shape of a rectangle, a square, a circle, an ellipse, a triangle, a rhombus, a parallelogram, or other polygons, etc.

[0048] As shown in FIG. 1, the light emitting diode chip MC includes the N-type semiconductor layer 101, the P-type semiconductor layer 104, the first light emitting layer 103, and the second light emitting layer 102. The first light emitting layer 103 and the second light emitting layer 102 are stacked, and the first light emitting layer 103 is located on a side of the second light emitting layer 102 closer to the P-type semiconductor layer 104, i.e., the first light emitting layer 103 is closer to the P-type semiconductor layer 104, and the second light emitting layer 102 is closer to the N-type semiconductor layer 101.

[0049] Holes output by the P-type semiconductor layer 104 and electrons output by the N-type semiconductor layer 101 recombine in the first light emitting layer 103, so that the first light emitting layer 103 generates light of at least one wavelength band in an electroluminescent manner. The holes output by the P-type semiconductor layer 104 cannot reach the second light emitting layer 102, and the second light emitting layer 102 cannot electroluminesce. The first light emitting layer 103 generates first wavelength band light, which is transmitted into the second light emitting layer 102, exciting the second light emitting layer 102 to generate light of at least one wavelength band in a photoluminescent manner.

[0050] When the first light-emitting layer 103 generates light rays of one wavelength, the first light-emitting layer 103 only has one light-emitting mechanism of electroluminescence. When the first light-emitting layer 103 generates light rays of at least two wavelengths, the light rays of the minimum wavelength can excite the material of the light rays of the greater wavelength to photoluminescence, so that the first light-emitting layer 103 has two light-emitting mechanisms of electroluminescence and photoluminescence. The holes in the P-type semiconductor layer 104 are difficult to transmit to the second light-emitting layer 102, and the second light-emitting layer 102 only has one light-emitting mechanism of photoluminescence.

[0051] In the embodiment of the present application, the light-emitting diode chip MC has two forms of electroluminescence and photoluminescence, so that the stability of the spectral energy distribution of the light-emitting structure with the change of current is good. The second light-emitting layer 102 of photoluminescence is located between the N-type semiconductor layer 101 and the P-type semiconductor layer 104, and the second light-emitting layer 102 can release stress in advance, so that the external quantum efficiency of the first light-emitting layer 103 is improved. At the same time, the second light-emitting layer 102 itself has good crystal quality, and can be reflected and absorbed multiple times between the N-type semiconductor layer 101 and the P-type semiconductor layer 104, so that the external quantum efficiency of the second light-emitting layer 102 can also be improved, so that the wavelengths generated by the first light-emitting layer 103 and the second light-emitting layer 102 can have higher external quantum efficiency compared with the traditional LED.

[0052] Each wave band of light rays can include multiple wavelengths, and the number of wavelengths contained is greater than or equal to 1 and less than or equal to 10. The number of wavelengths in different wave bands of light rays can be equal or not equal. The wave bands generated by the first light-emitting layer 103 and the second light-emitting layer 102 can be the same or different. For example, the first light-emitting layer 103 generates light rays of one wave band, which is a purple wave band. The first light-emitting layer 103 corresponds to a purple wave band including one wavelength. The second light-emitting layer 102 generates light rays of two wave bands, which are a purple wave band and a blue wave band. The second light-emitting layer 102 corresponds to a purple wave band including two wavelengths, and both of the two wavelengths are less than the wavelength of the purple wave band corresponding to the first light-emitting layer 103. The second light-emitting layer 102 corresponds to a blue wave band including two wavelengths. The light-emitting diode chip MC generates light rays of a purple wave band with three wavelengths and light rays of a blue wave band with two wavelengths. The light-emitting diode chip MC is in the form of “A3B2”, where “A” represents a purple wave band, “B” represents a blue wave band, and the numbers represent the number of wavelengths of the corresponding wave band.

[0053] In the embodiments of the present application, the wavelength band, the number of wavelengths, the peak wavelength and the half-peak width of each wavelength, and the light intensity ratio of different wavelengths of the light-emitting diode chip MC can be selected according to the needs of different color temperatures and color rendering indexes, and a suitable packaging scheme is combined to realize full spectrum, that is, the spectral design of full spectrum is not limited by the traditional light-emitting diode chip MC, can be closer to natural light, and the blue light is lower. The realized spectrum is more continuous, the color temperature can cover 1500-7000 Kelvin (K), and the color rendering index is greater than 80; in some embodiments, the color rendering index is greater than 90; in some other embodiments, the color rendering index is greater than 95. At the same time, the multi-wavelength light-emitting diode chip MC combined with electroluminescence and photoluminescence is simple in driving mode, simple in packaging process, simple in control mode, convenient for cost control, and easy to obtain full spectrum illumination spectrum. In addition, the size of the light-emitting diode chip MC and the light-emitting diode chip group can be flexibly adjusted, the cost is reduced, and the reliability and service life are improved.

[0054] In some possible embodiments, the light-emitting structure generates blue band light, and the generated blue band light includes at least two different wavelengths of blue light to improve spectral continuity. In some possible examples, the light-emitting structure generates first wavelength blue light and second wavelength blue light, the peak wavelength of the first wavelength blue light generated by the light-emitting structure ranges from 440±10 nm, and / or the peak wavelength of the second wavelength blue light ranges from 455±10 nm. The ratio of the optical power of the second wavelength blue light to the optical power of the first wavelength blue light generated by the light-emitting structure is greater than or equal to 0.5. In this way, the second wavelength blue light is highlighted, thereby achieving better spectral continuity, reducing blue light hazards, and improving light efficiency.

[0055] In some other possible examples, the light-emitting structure generates first wavelength blue light, second wavelength blue light, and third wavelength blue light. The peak wavelength of the first wavelength blue light generated by the light-emitting structure ranges from 440±10 nm, and / or the peak wavelength of the second wavelength blue light ranges from 455±10 nm, and / or the peak wavelength of the third wavelength blue light ranges from 470±10 nm. The ratio of the optical power of the second wavelength blue light to the optical power of the first wavelength blue light generated by the light-emitting structure is greater than or equal to 0.5, and / or the ratio of the optical power of the third wavelength blue light to the optical power of the first wavelength blue light is greater than or equal to 0.25. In this way, the second wavelength blue light is highlighted, thereby achieving better spectral continuity, reducing blue light hazards, and improving light efficiency.

[0056] The light generated by the first light-emitting layer 103 corresponds to a wavelength band including one of a violet band, a blue band, a cyan band, or a green band. The light generated by the second light-emitting layer 102 corresponds to a wavelength band including one of a violet band, a blue band, a cyan band, a green band, a yellow band, a red band, or an infrared band. At least one wavelength of the light generated by the first light-emitting layer 103 is less than all wavelengths of the light generated by the second light-emitting layer 102. In this way, the light generated by the first light-emitting layer 103 can excite the second light-emitting layer 102 to emit light.

[0057] In some embodiments, the violet band has a wavelength range of [400, 420) nm, the blue band has a wavelength range of [420, 480] nm, the cyan band has a wavelength range of (480, 510) nm, the green band has a wavelength range of [510, 565) nm, the yellow band has a wavelength range of [565, 590) nm, the red band has a wavelength range of [590, 740] nm, and the infrared band has a wavelength range of (740, 1700] nm.

[0058] The light in the violet band is violet light, which has a color of violet. The light in the blue band is blue light, which has a color of blue. The light in the cyan band is cyan light, which has a color of cyan. The light in the green band is green light, which has a color of green. The light in the yellow band is yellow light, which has a color of yellow. The light in the red band is red light, which has a color of red. The light in the infrared band is infrared light, which has a color of colorless.

[0059] In some embodiments, the light-emitting diode chip MC can include a total of n colors, 1≤n≤7, where the electroluminescent mechanism includes a color a, and the photoluminescent mechanism includes a color b, 1≤a≤4, 2≤b≤7. Here, the color corresponds to a wavelength band, for example, blue corresponds to a blue band with a wavelength range of 420-470 nm.

[0060] In some possible implementations, at least one light-emitting diode chip MC in the light-emitting structure generates light corresponding to a wavelength band including at least one of a violet band and a blue band. For example, as shown in FIGS. 1 and 2, a single light-emitting diode chip MC is in the form of “BxBy”, which is abbreviated as “Bx+y”, where x and y are the number of wavelengths corresponding to a wavelength band, each of which is greater than or equal to 1. Here, “Bx” represents the number of wavelengths of the blue band emitted by the first light-emitting layer 103, and “By” represents the number of wavelengths of the blue band emitted by the second light-emitting layer 102. For example, as shown in FIG. 1, a single light-emitting diode chip MC is in the form of “B2B1”, or as shown in FIG. 2, a single light-emitting diode chip MC is in the form of “B1B2”. A single light-emitting diode chip MC is in the form of “B3”, i.e., the blue band of the chip includes a total of 3 wavelengths, and the spectrum is shown in FIG. 3.

[0061] In some possible embodiments, the blue wavelength band in the full spectrum illumination light source includes at least two wavelengths, and all the wavelengths included in the blue wavelength band are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm; and / or, the violet wavelength band in the full spectrum illumination light source includes at least two wavelengths, and all the wavelengths included in the violet wavelength band are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm.

[0062] In some possible embodiments, the blue wavelength band in the full spectrum illumination light source includes at least two wavelengths, and all the wavelengths included in the blue wavelength band are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm; and / or, the violet wavelength band in the full spectrum illumination light source includes at least two wavelengths, and all the wavelengths included in the violet wavelength band are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm.

[0063] In this way, the multiple wavelengths corresponding to the blue wavelength band of the light generated by the light emitting structure have continuity, that is, the blue light in the full spectrum illumination light source has good continuity; or, the multiple wavelengths corresponding to the violet wavelength band of the light generated by the light emitting structure have continuity, that is, the violet light in the full spectrum illumination light source has good continuity; or, the multiple wavelengths corresponding to the blue wavelength band of the light generated by the light emitting structure have continuity, and the multiple wavelengths corresponding to the violet wavelength band of the light generated by the light emitting structure have continuity, and the full spectrum illumination light source has good spectral continuity.

[0064] The difference between the maximum peak wavelength in the violet wavelength band and the minimum peak wavelength in the blue wavelength band is greater than or equal to 5 nm. In this way, the violet wavelength band of the light generated by the light emitting structure and the blue wavelength band of the light generated by the light emitting structure have continuity.

[0065] In some possible embodiments, the blue wavelength band in the full spectrum illumination light source includes at least two wavelengths, and all the wavelengths included in the blue wavelength band are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm; and / or, the violet wavelength band in the full spectrum illumination light source includes at least two wavelengths, and all the wavelengths included in the violet wavelength band are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm.

[0066] In other possible embodiments, all the wavelengths of the light generated by the light emitting structure are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm. The full width at half maximum of all the wavelengths generated by the light emitting structure is 10 nm-70 nm. In this way, the full spectrum illumination light source formed by the light emitting structure has good spectral continuity.

[0067] In some possible implementations, the waveband corresponding to the light generated by the light emitting structure includes a blue waveband, a cyan waveband, a green waveband, a yellow waveband and a red waveband. In this way, the full spectrum illumination light source formed includes blue light, cyan light, green light, yellow light and red light. The peak wavelength of the red waveband includes at least one of a short waveband, a middle waveband and a long waveband, so that the light of the red waveband includes at least one of short wave red light, middle wave red light and long wave red light. The short wave red light has high luminous efficiency, the middle wave red light has high luminous efficiency and a middle color rendering index, and the long wave red light has a high color rendering index. The wavelength range of the short wave red light is [590, 620) nm, the wavelength range of the middle wave red light is [620, 640) nm, and the wavelength range of the long wave red light is [640, 740) nm.

[0068] In some embodiments, the waveband corresponding to the light generated by the light emitting structure further includes at least one of a purple waveband and an infrared waveband. In this way, the light source formed further includes at least one of purple light and infrared light, forming a full spectrum. For example, the purple waveband, the blue waveband, the cyan waveband, the green waveband, the yellow waveband, the red waveband and the infrared waveband each have at least two wavelengths. All the wavelengths are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm, and the spectral continuity of the full spectrum illumination light source formed is good.

[0069] The light emitting structure in the embodiments of the present application has multiple packaging modes, and each packaging mode can form a full spectrum illumination light source, that is, the light generated by at least one light emitting diode chip MC forms a full spectrum illumination light source. For example, the light generated by a single / multiple light emitting diode chip MC forms a full spectrum illumination light source; or the light generated by a single / multiple light emitting diode chip MC and a single / multiple single wave chip SC forms a full spectrum illumination light source; or the light generated by a single / multiple light emitting diode chip MC and a color conversion layer 105 forms a full spectrum illumination light source; or the light generated by a single / multiple light emitting diode chip MC, a single / multiple single wave chip SC and a color conversion layer 105 forms a full spectrum illumination light source.

[0070] In addition, the wavelengths of all the light generated by the light emitting structure are sorted by peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm. In addition, the waveband corresponding to the light generated by the light emitting structure includes a blue waveband, a cyan waveband, a green waveband, a yellow waveband and a red waveband, and the light of the red waveband includes at least one of short wave red light, middle wave red light and long wave red light. The red waveband can be generated by a light emitting diode chip MC, or can be converted and generated by a single wave chip SC or a color conversion layer 105. In this way, the light emitting structure has multiple structures and packaging modes, which facilitates the formation of a full spectrum illumination light source, and the spectral continuity of the full spectrum illumination light source is good.

[0071] In the first possible embodiment, the light emitting structure comprises one light emitting diode chip MC, and the light emitted by the light emitting diode chip MC forms the full spectrum illumination light source. In this way, one light emitting diode chip MC is packaged alone, and the full spectrum illumination light source can be directly obtained on the light emitting diode chip MC. Only one light emitting diode chip MC is used, and the driving circuit is simple, and the control mode is simple.

[0072] One light emitting diode chip MC contains multiple wavelengths, and no powder needs to be added during packaging, and the packaging is simple. The cost of one light emitting diode chip MC is lower than the total cost of multiple light emitting diode chips MC, and is also lower than the total cost of a conventional single-wavelength chip SC plus multiple fluorescent powders, and the cost is relatively low.

[0073] In some possible examples, as shown in FIG. 6, the light emitting diode chip MC is in the form of “BxCyGzYmRn”, where z, m, and n are the number of wavelengths corresponding to the wave bands, and each of them is greater than or equal to 1. In other possible examples, the light emitting diode chip MC can also be in the form of “AxByCzGmYnRk”, “AxByCzGmYnRkIRt”, etc., where k and t are the number of wavelengths corresponding to the wave bands, and each of them is greater than or equal to 1.

[0074] In the second possible embodiment, the light emitting structure comprises at least two light emitting diode chips MC, and the light emitted by the at least two light emitting diode chips MC is mixed to form the full spectrum illumination light source. In this way, two or more light emitting diode chips MC are packaged together to obtain the full spectrum illumination light source.

[0075] In some possible examples, as shown in FIG. 7, the light emitting structure comprises two light emitting diode chips MC, the light emitting diode chip MC1 is in the form of “BxCy”, and the light emitting diode chip MC2 is in the form of “GxYyRz”. In other possible examples, as shown in FIG. 8, the light emitting structure comprises three light emitting diode chips MC, the light emitting diode chip MC1 is in the form of “BxCy”, the light emitting diode chip MC2 is in the form of “CxGy”, and the light emitting diode chip MC3 is in the form of “AxYyRz”.

[0076] In the third possible embodiment, referring to FIG. 9, the light emitting structure further comprises a color conversion layer 105, which is arranged on the light emitting side of the light emitting diode chip MC. The color conversion layer 105 can convert the color of the light emitted by the light emitting diode chip MC, for example, into red light, yellow light, green light, etc. The color conversion layer 105 can be added in the packaging glue, and the color conversion layer 105 is arranged on the light emitting surface of the light emitting diode chip MC during packaging. Alternatively, the color conversion material can be made into a film piece and attached to the light emitting surface of the packaged light emitting diode chip MC.

[0077] The color conversion layer 105 includes at least one color conversion material, and the converted light of each color conversion material has different wavelengths, i.e., each color conversion material generates a single wavelength. The color conversion material can be a quantum dot material or a fluorescent material, and the wavelength band corresponding to the converted light of the color conversion material includes a blue wavelength band, a green wavelength band, a cyan wavelength band, a yellow wavelength band, a red wavelength band, or an infrared wavelength band. For example, the color conversion material includes potassium fluorosilicate fluorescent powder, aluminate red fluorescent powder, aluminate green fluorescent powder, europium-doped blue fluorescent powder, yellow fluorescent powder, etc.

[0078] In some possible embodiments, the converted light of at least part of the color conversion materials has the same wavelength band, for example, the color conversion layer 105 includes two color conversion materials, both of which generate red light and have different wavelengths. For example, one of the color conversion materials generates short-wave red light with a wavelength of 600 nm, which is used to achieve high light efficiency, and the other color conversion material generates long-wave red light with a wavelength of 660 nm, which is used to achieve a high color rendering index.

[0079] The wavelength of the converted light of the color conversion material can be equal to the wavelength of the light generated by the light-emitting diode chip MC, so as to improve the brightness of the wavelength, for example, the light-emitting diode chip MC generates light with wavelengths of 530 nm and 580 nm, which are green light, respectively, and the converted light of the color conversion material can also be 530 nm, which is green light, so as to increase the brightness of the green light. Alternatively, the converted light of the color conversion material can also be 560 nm, which is green light, so as to increase the continuity of the wavelength of the green light, thereby increasing the continuity of the spectrum.

[0080] The light generated by the light-emitting diode chip MC and the converted light of the color conversion layer 105 are mixed to form a full-spectrum illumination light source. In this way, only one or a small number of color conversion materials (e.g., fluorescent powder) need to be added to form a full-spectrum illumination light source, which is simple to adjust and simple to package. The color conversion layer 105 can be arranged on one light-emitting diode chip MC or on multiple light-emitting diode chips MC, and the wavelength bands of the light generated by the color conversion layers 105 on different light-emitting diode chips MC can be the same or different.

[0081] In some possible examples, the light generated by the light emitting diode chip MC and the light converted by the color conversion layer 105 includes light in the blue, cyan, green, yellow, and red wavelength bands to form a full spectrum illumination light source. For example, referring to FIG. 10, the light emitting diode chip MC is in the form of "BxCy", and the color conversion layer 105 is in the form of "G+Y+R". For another example, the light emitting diode chip MC is in the form of "BxCyGz", and the color conversion layer 105 is in the form of "Y+R" or "G+Y+R". For yet another example, the light emitting diode chip MC is in the form of "BxCyGzYm", and the color conversion layer 105 is in the form of "R", "G+R", "Y+R", or "G+Y+R". Illustratively, the light emitting diode chip MC is in the form of "B2C1G2", the color conversion layer 105 is in the form of "Y+R", and the spectrum of the resulting light source is shown in FIG. 11.

[0082] In the above examples, the light generated by the light emitting diode chip MC and the light converted by the color conversion layer 105 can also include light in at least one of the violet and infrared wavelength bands. For example, the light emitting diode chip MC is in the form of "BxCy", and the color conversion layer 105 is in the form of "G+Y+R+IR". For another example, the light emitting diode chip MC is in the form of "AxByCzGmYn", and the color conversion layer 105 is in the form of "G+R+IR".

[0083] In some embodiments, in the examples where the light emitting structure includes one light emitting diode chip MC, and the light generated by the light emitting diode chip MC forms a full spectrum illumination light source, the light emitting structure can also include a color conversion layer 105 to increase the continuity and the ends of the spectrum. For example, the light emitting diode chip MC is in the form of "AxByCzGmYnRk", and the color conversion layer 105 is in the form of "G+Y+R+IR".

[0084] In a fourth possible embodiment, the light emitting structure further includes at least one single wavelength chip SC, which generates light in a single wavelength. For example, the single wavelength chip SC generates yellow light, green light, blue light, red light, etc. The light generated by the at least one light emitting diode chip MC and the light generated by the at least one single wavelength chip SC are mixed to form a full spectrum illumination light source. In this way, the at least one light emitting diode chip MC and the at least one single wavelength chip SC are packaged together to obtain a full spectrum illumination light source.

[0085] In some possible examples, the light emitting structure includes one light emitting diode chip MC and one single-wavelength chip SC, as shown in FIG. 12, the light emitting diode chip MC is in the form of “BxCyGzY”, and the single-wavelength chip SC is in the form of “R”. In other possible examples, the light emitting structure includes two light emitting diode chips MC and one single-wavelength chip SC, as shown in FIG. 13, the light emitting diode chip MC1 is in the form of “BxCy”, the light emitting diode chip MC2 is in the form of “GxYy”, and the single-wavelength chip SC is in the form of “R”.

[0086] In yet other possible examples, the light emitting structure includes one light emitting diode chip MC and two single-wavelength chips SC, as shown in FIG. 14, the light emitting diode chip MC is in the form of “AxByCzGm”, the single-wavelength chip SC1 is in the form of “R”, and the single-wavelength chip SC2 is in the form of “Y”. In other possible examples, the light emitting structure includes two light emitting diode chips MC and two single-wavelength chips SC, as shown in FIG. 15, the light emitting diode chip MC1 is in the form of “AxBy”, the light emitting diode chip MC2 is in the form of “CxYy”, the single-wavelength chip SC1 is in the form of “G”, and the single-wavelength chip SC2 is in the form of “R”.

[0087] In a fifth possible embodiment, the light emitting structure further includes at least one single-wavelength chip SC and at least one color conversion layer 105, the color conversion layer 105 is arranged on the light emitting side of the single-wavelength chip SC and / or the light emitting diode chip MC. The color conversion layer 105 can be arranged on the light emitting side of at least one of the single-wavelength chip SC and the light emitting diode chip MC, and the converted wavelengths of the color conversion layer 105 at different positions can be the same or different.

[0088] The light generated by the at least one light emitting diode chip MC, the light generated by the at least one single-wavelength chip SC, and the light converted by the color conversion layer 105 are mixed to form a full-spectrum illumination light source. The at least one light emitting diode chip MC and the at least one single-wavelength chip SC are packaged together, and the color conversion layer 105 can be added in the packaging glue. The color conversion layer 105 can be arranged on the light emitting surface of the light emitting diode chip MC and / or the single-wavelength chip SC during packaging, or a film can be formed to be attached to the light emitting surface of the packaged light emitting diode chip MC and single-wavelength chip SC.

[0089] In some possible implementations, the light generated by one light emitting diode chip MC, the light generated by one single-wavelength chip SC, and the light converted by the color conversion layer 105 are mixed to form a full-spectrum illumination light source, and the color conversion layer 105 generates light of one wavelength. For example, as shown in FIG. 16, the light emitting diode chip MC is in the form of “BxCyGz”, the single-wavelength chip SC is in the form of “Y”, and the color conversion layer 105 is in the form of “R”.

[0090] In some possible implementation manners, the light generated by the light-emitting diode chip MC, the light generated by the two single-wavelength chips SC, and the light converted by the color conversion layer 105 are mixed to form a full-spectrum illumination light source. For example, referring to FIG. 17, the light-emitting diode chip MC is in a "BxBy" form, the single-wavelength chip SC1 is in a "C" form, the single-wavelength chip SC2 is in a "G" form, and the color conversion layer 105 is in a "Y+R" form. For example, the light-emitting diode chip MC is in a "B3" form, the single-wavelength chip SC1 is in a "C" form, the single-wavelength chip SC2 is in a "G" form, and the color conversion layer 105 is in a "Y+R" form, and the spectrum is shown in FIG. 18.

[0091] In the embodiments of the present application, referring to FIGS. 1, 19 to 21, the first light-emitting layer 103 in the light-emitting diode chip MC includes at least one first sub-layer 201, and the second light-emitting layer 102 includes at least one second sub-layer 202. The at least one first sub-layer 201 is sequentially stacked into the first light-emitting layer 103, and the at least one second sub-layer 202 is sequentially stacked into the second light-emitting layer 102. The second light-emitting layer 102 and the first light-emitting layer 103 are sequentially stacked along the direction from the N-type semiconductor layer 101 to the P-type semiconductor layer 104, that is, the first light-emitting layer 103 is located on the side of the second light-emitting layer 102 close to the P-type semiconductor layer 104. Each first sub-layer 201 and each second sub-layer 202 respectively generate light of one wavelength.

[0092] The number of the first sub-layers 201 is consistent with the number of wavelengths contained in the light generated by the first light-emitting layer 103, and each first sub-layer 201 emits light of one wavelength. The number of the second sub-layers 202 is consistent with the number of wavelengths contained in the light generated by the second light-emitting layer 102, and each second sub-layer 202 emits light of one wavelength. The first sub-layers 201 and the second sub-layers 202 are formed by an epitaxy process, and each of the first sub-layers 201 and the second sub-layers 202 can be a quantum well (QW) or a multiple quantum well (MQW). As shown in FIG. 22, the quantum well includes two barrier layers 203 and one well layer 204, and the well layer 204 is located between the two barrier layers 203. As shown in FIG. 23, the multiple quantum well is formed by alternately stacking a plurality of barrier layers 203 and a plurality of well layers 204, and the number of the barrier layers 203 is one more than the number of the well layers 204. The whole starts with a barrier layer 203 and ends with a barrier layer 203.

[0093] In some possible examples, in the light emitting diode chip MC, except for one first layer 201 close to the second layer 202, the sum of thicknesses (T1) of the rest of the first layers 201 is less than the hole diffusion length, and the sum of thicknesses (T2) of all the first layers 201 is greater than the hole diffusion length. As shown in FIG. 19, the thickness T1 is less than the hole diffusion length, and the thickness T2 is greater than the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 104 can reach all the first layers 201, so that all the first layers 201 can electroluminesce. The holes generated by the P-type semiconductor layer 104 cannot reach the second layers 202, and the second layers 202 cannot electroluminesce.

[0094] In yet some other examples, in the light emitting diode chip MC, except for one first layer 201 close to the second layer 202, the sum of thicknesses (T1) of the rest of the first layers 201 is less than the hole diffusion length, and the sum of thicknesses (T2) of all the first layers 201 is equal to the hole diffusion length. In this case, the holes generated by the P-type semiconductor layer 104 can also reach all the first layers 201, so that all the first layers 201 can electroluminesce. The holes generated by the P-type semiconductor layer 104 cannot reach the second layers 202, and the second layers 202 cannot electroluminesce.

[0095] In yet some other examples, in the light emitting diode chip MC, a first barrier layer 106 is arranged between adjacent first layers 201 and second layers 202, except for one first layer 201 close to the second layer 202, the sum of thicknesses (T1) of the rest of the first layers 201 is less than the hole diffusion length, and the sum of thicknesses (T3) of each first layer 201 and the first barrier layer 106 is greater than the hole diffusion length. As shown in FIG. 20, the thickness T1 is less than the hole diffusion length, and the thickness T3 is greater than the hole diffusion length, in this way, the holes generated by the P-type semiconductor layer 104 can reach all the first layers 201, so that all the first layers 201 can electroluminesce. The holes generated by the P-type semiconductor layer 104 cannot pass through the first barrier layer 106, i.e., the holes generated by the P-type semiconductor layer 104 cannot reach the second layers 202, and the second layers 202 cannot electroluminesce. The material of the first barrier layer 106 can be a gallium nitride material doped with silicon.

[0096] In some other possible examples, a second barrier layer 107 is arranged between every two adjacent second sub-layers 202 to block the holes from reaching the second sub-layer 202 far away from the P-type semiconductor, and the material of the second barrier layer 107 can be a silicon-doped gallium nitride material. For example, referring to FIG. 21, a second barrier layer 107 is arranged between every two adjacent second sub-layers 202, and a first barrier layer 106 is arranged between the adjacent first sub-layer 201 and the second sub-layer 202. In this way, the blocking effect of the holes is better, the second sub-layer 202 does not emit electroluminescence, and the stability of the spectral energy distribution with the change of the current is good.

[0097] The embodiment of the present application also provides a lighting device, which comprises a lighting lamp body, a mosquito-repelling structure and a light-emitting structure. The light-emitting structure is arranged to generate a full-spectrum lighting light source, and the mosquito-repelling structure is arranged to generate mosquito-repelling light to increase the mosquito-repelling function. In this way, the user is free from the interference of mosquitoes, and the mosquitoes are prevented from entering the lighting device, thereby prolonging the service life of the lighting device. The wavelength range of the mosquito-repelling light is 560 nm-600 nm, and different wavelength ranges can be selected according to different mosquitoes. The light-emitting structure can be encapsulated to form a lighting lamp bead, and the mosquito-repelling structure can be encapsulated to form a mosquito-repelling lamp bead (i.e., a yellow light lamp bead).

[0098] The lighting lamp bead and the mosquito-repelling lamp bead can be arranged in a discrete manner or an integrated manner, i.e., the light-emitting structure and the mosquito-repelling structure are electrically connected to the same lighting lamp body or different lighting lamp bodies. In the above two arrangement manners, the lighting lamp bead and the mosquito-repelling lamp bead can be simultaneously enabled or individually enabled according to requirements. For example, only the mosquito-repelling lamp bead is turned on to be used for repelling mosquitoes.

[0099] For example, the lighting lamp bead is arranged in a lower lighting lamp body of a desk lamp, and the mosquito-repelling lamp bead is arranged in an upper lighting lamp body of the desk lamp. For another example, the lighting lamp bead is arranged in a lower lighting lamp body of a desk lamp, and the mosquito-repelling lamp bead is arranged on a lighting lamp body of a lamp arm of the desk lamp.

[0100] Alternatively, the lighting lamp bead and the mosquito-repelling lamp bead are arranged in the same lighting lamp body. For example, the lighting lamp bead and the mosquito-repelling lamp bead are both arranged in a lower lighting lamp body of a street lamp. For another example, the lighting lamp bead and the mosquito-repelling lamp bead are both arranged in an upper lighting lamp body of a street lamp, and are also arranged in a lower lighting lamp body of the street lamp, i.e., the lighting lamp bead and the mosquito-repelling lamp bead are arranged in the upper lighting lamp body and the lower lighting lamp body of the street lamp.

[0101] The lighting device in the embodiments of the present application utilizes the light emitting structure to generate a full spectrum lighting light source, and adopts a light emitting diode chip having two light emitting modes of electroluminescence and photoluminescence and having multiple wavelengths, so that the continuity of the light source spectrum is good, and the light source spectrum is closer to natural light, and the stability of the spectral energy distribution with current change is good. The mosquito-repelling structure generates mosquito-repelling light to increase the mosquito-repelling function. In this way, the mosquitoes are prevented from entering the working area to form interference, and the mosquitoes are prevented from entering the lamp, facilitating cleaning and maintenance.

[0102] In the description of the embodiments of the present application, unless explicitly defined and limited, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, can be fixed connection, can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship of two elements. For those skilled in the art, the meaning of the above terms in the present application can be understood according to the situation. The terms "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation. In the description of the present application, the meaning of "multiple" is two or more, unless explicitly defined and limited.

[0103] The terms "first", "second", "third", "fourth" and the like (if any) in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, processes, methods, systems, products or devices containing a series of steps or units shown in the embodiments of the present application can also include processes, methods, systems, products or devices not clearly listed in the series of steps or units, or other steps or units inherent to the processes, methods, systems, products or devices.

Claims

1. A light emitting structure configured to generate a full spectrum illumination light source, the light emitting structure comprising at least one light emitting diode chip, the light emitting diode chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light emitting layer and a second light emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, the first light emitting layer being located on a side of the second light emitting layer closer to the P-type semiconductor layer; the first light emitting layer generating at least one wavelength band of light in an electroluminescent manner, the first light emitting layer generating light that excites the second light emitting layer to generate at least one wavelength band of light, each of the wavelength bands of light comprising at least one wavelength; all of the wavelength bands of light generated by the light emitting structure comprising a blue wavelength band, a cyan wavelength band, a green wavelength band, a yellow wavelength band, and a red wavelength band.

2. The light emitting structure of claim 1, wherein, all of the wavelengths of light generated by the light emitting structure are ordered by peak wavelength magnitude, and adjacent two of the peak wavelengths have a difference greater than or equal to 5 nanometers.

3. The light emitting structure of claim 1, wherein, all of the wavelength bands of light generated by the light emitting structure have a full width at half maximum in a range of 10 nanometers to 70 nanometers.

4. The light emitting structure of claim 1, wherein, the blue wavelength band of light generated by the light emitting structure comprises at least two different wavelengths of blue light.

5. The light emitting structure of claim 4, wherein, the blue wavelength band of light generated by the light emitting structure comprises a first wavelength of blue light and a second wavelength of blue light.

6. The light emitting structure of claim 5, wherein, a ratio of the second wavelength of blue light to the first wavelength of blue light generated by the light emitting structure is greater than or equal to 0.

5.

7. The light emitting structure of claim 5, wherein, the peak wavelength range of the blue wavelength band generated by the light emitting structure comprises at least one of: a first wavelength of blue light having a peak wavelength range of 440 ± 10 nanometers, or a second wavelength of blue light having a peak wavelength range of 455 ± 10 nanometers.

8. The light emitting structure of claim 4, wherein, the blue wavelength band of light generated by the light emitting structure comprises a first wavelength of blue light, a second wavelength of blue light, and a third wavelength of blue light.

9. The light emitting structure of claim 8, wherein, the ratio of the blue wavelength band of light generated by the light emitting structure comprises at least one of: a ratio of the second wavelength of blue light to the first wavelength of blue light is greater than or equal to 0.5, or a ratio of the third wavelength of blue light to the first wavelength of blue light is greater than or equal to 0.

25.

10. The light emitting structure of claim 8, wherein, the peak wavelength range of the blue wavelength band generated by the light emitting structure comprises at least one of: a first wavelength of blue light having a peak wavelength range of 440 ± 10 nanometers, or a second wavelength of blue light having a peak wavelength range of 455 ± 10 nanometers, or a third wavelength of blue light having a peak wavelength range of 470 ± 10 nanometers.

11. The light emitting structure of claim 1, wherein, the red wavelength band of light comprises at least one of a short wavelength red light, a medium wavelength red light, and a long wavelength red light.

12. The light emitting structure of claim 11, wherein, the short wavelength red light has a peak wavelength range of [590, 620) nanometers, the medium wavelength red light has a peak wavelength range of [620, 640) nanometers, and the long wavelength red light has a peak wavelength range of [640, 740] nanometers.

13. The light emitting structure of claim 1, wherein, the wavelength bands of light generated by the light emitting structure further comprise at least one of a violet wavelength band and an infrared wavelength band.

14. The light emitting structure of claim 1, wherein, The light generated by the first light-emitting layer has a wavelength corresponding to at least one of a purple band, the blue band, the cyan band, and the green band, and the light generated by the second light-emitting layer has a wavelength corresponding to at least one of the purple band, the blue band, the cyan band, the green band, the yellow band, the red band, and an infrared band. At least one of the wavelengths of the light generated by the first light-emitting layer is less than all of the wavelengths of the light generated by the second light-emitting layer.

15. The light emitting structure of any of claims 1-14, wherein, The light-emitting structure includes one light-emitting diode chip, and the light generated by the first light-emitting layer and the second light-emitting layer of the light-emitting diode chip is mixed to form the full-spectrum illumination light source.

16. The light-emitting structure of any one of claims 1-14, further comprising a color conversion layer disposed on an emission side of the light-emitting diode chip. The light generated by the light-emitting diode chip and the light converted by the color conversion layer are mixed to form the full-spectrum illumination light source.

17. The light emitting structure of claim 16, wherein, The color conversion layer includes at least one color conversion material, and the light converted by each of the color conversion materials has a different wavelength.

18. The light emitting structure of claim 17, wherein, The color conversion material includes quantum dot material or fluorescent material, and the light converted by the color conversion material has a wavelength corresponding to a blue band, a green band, a cyan band, a yellow band, a red band, or an infrared band.

19. The light emitting structure of claim 17, wherein, At least part of the light converted by the color conversion material has a wavelength in the same band.

20. The light emitting structure of any of claims 1-14, wherein, The light-emitting structure includes at least two light-emitting diode chips, and the light generated by the at least two light-emitting diode chips is mixed to form the full-spectrum illumination light source.

21. The light-emitting structure of any one of claims 1-14, further comprising at least one single-wavelength chip that generates light having a single wavelength. The light generated by the at least one light-emitting diode chip and the light generated by the single-wavelength chip are mixed to form the full-spectrum illumination light source.

22. The light-emitting structure of any one of claims 1-14, further comprising at least one single-wavelength chip and at least one color conversion layer disposed on an emission side of at least one of the single-wavelength chip and the light-emitting diode chip. The light generated by the at least one light-emitting diode chip, the light generated by the at least one single-wavelength chip, and the light converted by the color conversion layer are mixed to form the full-spectrum illumination light source.

23. The light emitting structure of any of claims 1-14, wherein, The first light-emitting layer is formed by at least one first sublayer, and the second light-emitting layer is formed by at least one second sublayer, and each of the first sublayer and the second sublayer generates light having a single wavelength.

24. An illumination device, comprising an illumination lamp body, the light-emitting structure of any one of claims 1-23, and a mosquito-repelling structure configured to generate mosquito-repelling light. The light-emitting structure and the mosquito-repelling structure are disposed in the same illumination lamp body or in different illumination lamp bodies.

Images