Slanted Groove Etching Method

A technology of inclined slots and electrodes, applied in the field of microelectronics, which can solve the problems of reducing the etching rate, rough side walls of inclined holes, and enhancing deposition, etc., to achieve the effects of increasing etching rate, improving protection, and improving process efficiency

CN105712291BActive Publication Date: 2018-07-06BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2018-07-06

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Abstract

The invention provides a chute etching method. The method comprises the following steps: introducing SF6, O2 and C4F8 into a reaction chamber as etching gases, and starting an upper electrode power supply and a lower electrode power supply, so as to etch a chute on a surface of a silicon wafer to be etched, wherein the lower electrode power supply is a low frequency power supply; the setting way of the lower electrode power of the lower electrode power supply, the chamber pressure of the reaction chamber and the flow of the SF6, O2 and C4F8 is as follows: the lower electrode power, the chamber pressure and the flow of the O2 are improved, and the flow of the SF6 and C4F8 is reduced, so that the lateral wall of the chute can be straight and the etching rate can be improved.
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Description

technical field

[0001] The invention relates to the technical field of microelectronics, in particular to an oblique groove etching method. Background technique

[0002] As MEMS devices and MEMS systems are more and more widely used in the automotive and consumer electronics fields, and TSV through hole etching (Through Silicon Etch) technology has broad prospects in the future packaging field, dry plasma deep silicon etching process It has gradually become one of the hottest processes in the field of MEMS processing and TSV technology. The etching process of silicon grooves is a common etching process. Based on different applications, the requirements for the morphology of silicon grooves are also different. For example, in the field of packaging, it is usually necessary to obtain the morphology of silicon grooves with sloped sidewalls to meet the requirements of other subsequent processes. Usually, in order to facilitate the subsequent PVD filling, the inclination angle ...

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Embodiment Construction

[0029] In order for those skilled in the art to better understand the technical solution of the present invention, the method for etching inclined grooves provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0030] The inclined groove etching method provided by the present invention includes the following steps: feeding etching gas into the reaction chamber, simultaneously turning on the power supply of the upper electrode and the power supply of the lower electrode, and the power supply of the upper electrode is used to apply the power of the upper electrode to the reaction chamber to make the reaction chamber The etching gas in the chamber is excited to form a plasma; the lower electrode power supply is used to apply the lower electrode power to the silicon wafer, so that the plasma etches the silicon wafer until a predetermined etching depth is formed on the surface of the silicon wafer to be etched. chute. In pr...