Novel semiconductor thermoelectric power generation chip structure
A thermoelectric power generation and semiconductor technology, which is applied in semiconductor devices, semiconductor/solid-state device parts, circuits, etc., can solve problems affecting heat transfer efficiency and low thermal conductivity, so as to improve power generation efficiency, expand heat transfer area, and broad application fields Effect
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2016-07-06
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2
Abstract
Description
technical field
[0001] The invention relates to a device for generating electricity using semiconductor thermoelectric power generation chips, in particular to a novel thermoelectric power generation structure in which a plurality of thermoelectric power generation chips are simultaneously superimposed and generated by setting a temperature equalizing body. Background technique
[0002] Thermoelectric power generation chip is a kind of chip that uses the petier effect and Seebeck effect of semiconductor materials to generate electricity by energizing both ends of the P-type and N-type semiconductor materials to absorb heat and release heat, or to provide a temperature difference between the two ends of the P-type and N-type semiconductor materials. A semiconductor device made of technology. It does not require chemical reaction and has no mechanical moving parts, so it has the advantages of energy saving and environmental protection, small size, simple structure, no noise, f...
Examples
Embodiment Construction
[0027] like figure 1 As shown, it is a preferred embodiment of the present invention. The heat source 1 is fixed on the hot end of the first thermoelectric power generation chip 2 , and at least a second thermoelectric power generation chip 3 is fixed on the surface of the cold end of the first thermoelectric power generation chip 2 . The end corresponds to the hot end fixing method, the cold end of the second thermoelectric power generation chip 3 is fixed with the hot end of the third thermoelectric power generation chip 4, so that a plurality of thermoelectric power generation chips are superimposed and fixed; A heat sink 6 is fixed on the surface 5 of the power generation chip.
[0028] The heat source 1 can also be fixed on the surface of the isothermal body, the hot end of the second thermoelectric power generation chip 2 is fixed on the surface of the warm body, and at least a second thermoelectric power generation chip 3 is fixed on the cold end of the first thermoele...