High sensitivity near field resonant electric field test probe with loaded T-type electrode
A near-field resonance and high-sensitivity technology is applied in the fields of electromagnetic field characteristics, measuring devices, and measuring electrical variables. It can solve problems such as loss, achieve high-sensitivity gain performance, shorten the research and development cycle, and reduce production costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2018-08-24
Smart Images

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Abstract
Description
Technical field
[0001] The invention relates to a high-sensitivity near-field resonance electric field test probe loaded with a T-shaped electrode, which is used for the extraction of narrow-band weak electric field signals, and belongs to the field of electromagnetic leakage and electromagnetic field near-field testing.
Background technique
[0002] Due to the increase in operating frequency, the increase in the wiring density of printed circuit boards, the rapid switching of high and low levels of digital signals, and the increase in the speed of data buses, some undesirable electromagnetic field radiation has been generated. These radiations are picked up by cables, traces or pins of integrated circuits, and coupled into electronic devices or electronic systems, resulting in serious electromagnetic compatibility problems, making the design of high-performance RF electronic systems facing new challenges and severe challenges. difficulty. In electronic product design, ...
Examples
Embodiment Construction
[0029] Combined with the accompanying drawings, the structure, positional relationship and function of each part of a high-sensitivity near-field resonant electric field test probe loaded with T-shaped electrodes will be further clarified.
[0030] figure 1 A four-layer PCB stacked structure of a high-sensitivity near-field resonant electric field test probe loaded with a T-shaped electrode is shown in the present invention. figure 2 An overall top view of a high-sensitivity near-field resonant electric field test probe loaded with a T-shaped electrode is shown in the present invention. Fig. 3 shows successively from left to right the first layer (Fig. 3(a)) and the second layer (Fig. ), the third layer (Fig. 3(c)) and the fourth layer (Fig. 3(d)).
[0031] The invention relates to a high-sensitivity near-field resonance electric field test probe loaded with a T-shaped electrode, which includes an SMA connector 1-1 and an electric field probe body; the design and processing...