Low-profile transformer and method of manufacturing the same

Abstract

Techniques and mechanisms for delivering electrical power using a transformer are disclosed. In an embodiment, the transformer includes a dielectric plate structure, a first conductor, a ferromagnetic material layer disposed around a primary winding of the first conductor, and a second conductor forming a secondary winding around the ferromagnetic material layer. For one of the primary windings or one of the secondary windings, the cross-section of the winding conforms to a rectangle, where the width of the cross-section is greater than the height of the cross-section. The ferromagnetic material of the ferrite layer extends between consecutive primary windings in the primary winding. In another embodiment, the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%).

Description

Technical Field

[0001] Embodiments of the present invention generally relate to power delivery, and more particularly, but not exclusively, to transformer devices that support high-frequency alternating current (AC) output. Background Art

[0002] The demand for ever-increasing levels of performance and functionality in microprocessors and other integrated circuit (IC) devices has led to circuit densities in these devices exceeding one hundred million transistors per die. This number may soon exceed one billion transistors per die. The operation of ICs typically relies on power converters to facilitate conversion from one type of alternating current (AC) signal or direct current (DC) signal to another type of AC signal or DC signal. Such converters are commonly used in various desktop computers, servers, and home electronic devices, as well as in mobile computer systems such as laptop computers, mobile phones, personal digital assistants, and gaming systems.

[0003] For example, conventional power converters use switching frequencies in the range of 100 kilohertz (kHz) to 125 kHz, while some high-end units are capable of operating in the range of 1 megahertz (MHz) to 2 MHz. These rates are expected to be insufficient for new transistor technologies used in various platforms. For example, high electron mobility transistor (HEMT) devices are an example of a type of technology that operates at relatively high frequencies compared to older transistor architectures.

[0004] As market pressures continue to drive smaller (e.g., thinner) platforms that support faster computing speeds while remaining price competitive, there is a greater benefit in continuously improving the power delivery mechanisms that support such platforms. Summary of the Invention

[0005] One aspect of the present disclosure relates to a transformer device, comprising: a dielectric slab structure; a first conductor that conducts a first signal, wherein the first conductor forms a primary winding around the dielectric slab structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, wherein the first cross-section is orthogonal to the direction in which the first signal is to flow; a ferrite layer disposed around the dielectric slab structure and the primary winding, wherein a ferromagnetic material of the ferrite layer extends between consecutive primary windings in the primary winding, wherein a volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%); and a second conductor that conducts a second signal, wherein the second conductor forms a secondary winding around the primary winding and extending around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, wherein the second cross-section is orthogonal to the direction in which the second signal is to flow.

[0006] Another aspect of the present disclosure relates to a method for manufacturing a transformer, the method comprising: forming a primary winding of a first conductor around a dielectric flat structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which a first signal is to flow in one of the primary windings; forming a ferrite layer around the dielectric flat structure and the primary winding, wherein the ferromagnetic material of the ferrite layer extends between consecutive primary windings in the primary winding, and wherein the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%); and forming a secondary winding of a second conductor around the primary winding and around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and the second cross-section is orthogonal to the direction in which a second signal is to flow in one of the secondary windings.

[0007] Another aspect of the present disclosure relates to a system comprising: a transformer device including: a dielectric flat structure; a first conductor forming a primary winding around the dielectric flat structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which a first signal is to flow; a ferrite layer disposed around the dielectric flat structure and the primary winding, wherein the ferromagnetic material of the ferrite layer extends between consecutive primary windings in the primary winding, and wherein the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%); and a second conductor forming a secondary winding around the primary winding and around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and wherein the second cross-section is orthogonal to the direction in which a second signal is to flow; a first circuit coupled to conduct a first signal via the first conductor; a second circuit coupled to conduct a second signal via the second conductor; and a display device coupled to the first circuit and the second circuit, the display device displaying an image based on the first signal and the second signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Embodiments of the present invention are illustrated by way of example and not limitation in the figures of the accompanying drawings, and in the drawings:

[0009] Figure 1 is a hybrid perspective view and functional block diagram showing elements of a system for delivering electrical power according to an embodiment.

[0010] Figure 2is a flowchart showing elements of a method for providing functions of a transformer device according to an embodiment.

[0011] Figures 3A - 3E is a perspective view of each of the corresponding structures during a corresponding stage of a process for manufacturing a transformer according to an embodiment.

[0012] Figure 4 is a functional block diagram showing elements of a computer device according to an embodiment.

[0013] Figure 5 is a functional block diagram showing elements of a computer system according to an embodiment. DETAILED DESCRIPTION

[0014] The embodiments described herein include, in various ways, techniques or mechanisms for providing functions of a transformer device. In an embodiment, the transformer provides a low-profile form factor for high energy density power conversion, e.g., where the transformer supports conversion to or from a high frequency alternating current (AC) signal.

[0015] Such a transformer can include a dielectric material body (referred to herein as a “dielectric slab structure,” or simply as a “slab structure” for brevity), a first conductor extending around the dielectric slab structure, a ferromagnetic material layer disposed around a winding of the first conductor, and a second conductor extending around the ferromagnetic material layer. Operation of the transformer can include conducting a first signal and a second signal using the first conductor and the second conductor, respectively. In some embodiments, high frequency switching using the transformer is achieved, at least in part, due to physical properties of the ferrite material and / or physical properties of the conductive windings (e.g., where the output signal is in the range of 10 MHz to 60 MHz).

[0016] The techniques described herein can be implemented in one or more electronic devices. Non-limiting examples of electronic devices that can utilize the techniques described herein include any kind of mobile device and / or fixed device, such as a camera, a cellular phone, a computer terminal, a desktop computer, an e-reader, a fax machine, a phone booth, a laptop computer (e.g., a netbook computer, a notebook computer, etc.), an Internet device, a payment terminal, a personal digital assistant, a media player and / or recorder, a server (e.g., a blade server, a rack-mounted server, combinations thereof, etc.), a set-top box, a smart phone, a tablet personal computer, a super mobile personal computer, a landline phone, combinations thereof, etc. More generally, the technique can be employed in any electronic device among various electronic devices including a transformer having the features described herein.

[0017] Figure 1Illustrates the features of a system 100 for delivering power to a circuit according to an embodiment. System 100 is an example of an embodiment that implements power conversion using a transformer that supports high energy density in a high spatial efficiency form factor. In the illustrated exemplary embodiment, system 100 includes a transformer 130 and circuits (e.g., the illustrated exemplary circuits 110, 120, 150, 160) coupled thereto, where such circuits deliver power and / or receive power via transformer 130 in various ways. For example, circuits 150, 160 may be coupled to each other via a first conductor 142 of transformer 130, and circuits 110, 120 are coupled to each other via a second conductor of transformer 130 (e.g., the second conductor includes conductive portions 112, 122 and a winding 134 therebetween). Circuits 150, 160 may be different respective portions of a first circuit that is to conduct a first signal via the first conductor 142. Similarly, circuits 110, 120 may be different respective portions of a second circuit that is to conduct a second signal via the second conductor. In such an embodiment, one of the first signal and the second signal may provide power based on the other of the first signal and the second signal.

[0018] Transformer 130 may include a dielectric plate structure 140, where the first conductor 142 forms a primary winding (not shown) around the plate structure 140. The plate structure 140 may include any dielectric material among various dielectric materials, including but not limited to FR-4, mica, ceramics, etc. In some embodiments, the plate structure 140 includes a high dielectric perovskite, such as barium titanate (BaTiO3) or any material among various barium-strontium-titanate materials.

[0019] Transformer 130 may further include a structure such as the illustrated exemplary ferrite layer 132, which includes a ferromagnetic material that extends around both the dielectric plate structure 140 and the winding formed by the first conductor 142. Examples of such ferromagnetic materials include but are not limited to any material among nickel-zinc, nickel-zinc ferrite, manganese-zinc ferrite, carbonyl iron, various powdered iron ferrites, and / or similar materials. In such an embodiment, the winding 134 formed by the second conductor may surround the primary winding and extend around a portion of the ferrite layer 132. In some embodiments, an insulator material layer (not shown) may be provided to provide insulation between the ferrite layer 132 and the winding 134. The first conductor 142 and / or the second conductor (including portions 112, 122 and the winding 134) may include, for example, any material among various metals, alloys, etc., including but not limited to copper (Cu), aluminum (Al), silver (Ag), silver-plated copper, gold (Au), electroless nickel immersion gold (ENIG) copper, plated copper / nickel, etc.

[0020] Transformer 130 may be configured to provide a low-profile (z-height) form factor. For example, compared to existing transformer architectures, transformer 130 allows for high energy density and high switching rates. In an illustrative embodiment, the length (x-axis dimension) of transformer 130 is between 12 millimeters (mm) and 15 mm. For example, where the width (y-axis dimension) of transformer 130 is between 8 mm and 15 mm and / or the thickness (z-axis dimension) of transformer 130 is between 1 mm and 5 mm. However, these dimensions of transformer 130 are merely illustrative and may vary in different embodiments based on implementation-specific details. The fabrication of ferrite layer 132, dielectric slab structure 140, first conductor 142, second conductor, and / or other structures of transformer 130 may include, for example, one or more operations adapted from conventional additive processes and / or subtractive processes used to fabricate electronic components. Specific details of such conventional techniques are not described in detail herein (not to limit some embodiments) to avoid obscuring the features of such embodiments.

[0021] Although some embodiments are not limited in this regard, the structure of transformer 130 may extend through its package 136 or otherwise be disposed within its package 136 in various ways. Package 136 includes, for example, any of the encapsulation materials such as epoxy molding compound and / or various other known encapsulation materials. Package 136 is shown as transparent in Figure 1 merely to illustrate the various structures disposed therein.

[0022] The configuration of one or more conductive winding structures of transformer 130 may facilitate improving the signal frequency characteristics of system 100. For example, the cross-sectional profile of one or more conductive windings may have a shape other than any circular shape (e.g., rectangular). Wider and lower-profile windings may assist in magnetic coupling between first conductor 142 and the second conductor via ferrite layer 132. In some embodiments, the continuous windings of the conductors may be separated from each other, for example, to provide improved conductance by reducing the flux effect between such windings and / or by allowing ferromagnetic material to extend between the windings.

[0023] Alternatively or additionally, the physical properties of one or more ferrite structures may facilitate improving the switching characteristics of system 100. For example, as Figure 1As shown in the cross-sectional detail in illustration 170, the ferrite layer 132 can include particles, grains, and / or other such clusters of ferromagnetic material that extend around the interstitial regions in the ferrite layer 132 in various ways. Such clusters (referred to herein as "ferrite node structures") can be melted or otherwise joined to each other in various ways (e.g., by a sintering process). For example, these nodes can include different ferrite particles that are adjacent to each other in various ways and / or can include ferrite structures that are melted together at their respective surfaces. For example, the interface between one ferrite node structure and an adjacent ferrite node structure can be indicated by a local minimum in the cross-sectional area of any ferromagnetic material between the node structures.

[0024] In the illustrative embodiment shown in illustration 170, the ferrite layer 132 includes ferrite node structures 172 that are adjacent to and extend around the interstitial region 174 in various ways. The interstitial region 174 can be provided with air and / or an adhesive material for facilitating a sintering process or other process for joining ferrite particles in various ways. For example, such an adhesive material can include paraffin wax, although some embodiments are not limited in this regard. For example, the respective lengths (e.g., diameters) of the ferrite node structures 172 can range from 30 nanometers (nm) to 30 micrometers, e.g., depending on implementation-specific details.

[0025] The ferrite layer 132 can have at least a certain minimum volume fraction that is attributable to interstitial regions such as the illustrative interstitial region 174 shown. By providing interstitial regions that provide such a minimum volume fraction (and the corresponding maximum volume fraction of all ferromagnetic material in the layer), some embodiments reduce the likelihood of the transformer 130 saturating during its operation. By way of illustration and not limitation, the volume fraction of ferromagnetic material in the ferrite layer 132 can be equal to or less than 97%, e.g., where the volume fraction of the interstitial region 174 in the ferrite layer 132 ranges from 3% to 25% (in some embodiments, from 5% to 15%). It is to be understood that the total volume of the ferrite layer 132 does not include the volume of other structures that are surrounded by the ferrite layer 132, e.g., where such structures include portions of the dielectric slab structure 140 and the conductor 142.

[0026] The volume fraction of the interstitial region 174 can be at least partially due to the ferrite node structure 172 including node structures of different sizes. For example, where the respective sizes (e.g., lengths) of the ferrite node structure 172 have a non-Gaussian distribution. By way of illustration and not limitation, the ferrite node structure 172 can be composed of a combination of a first ferrite node structure having a first Gaussian size distribution and a second ferrite node structure having a second Gaussian size distribution. In such an embodiment, the difference (e.g., absolute difference) between the first mean of the first Gaussian size distribution and the second mean of the second Gaussian size distribution can be at least 10% (in some embodiments, at least 20%) of the second mean. In various embodiments, any combination of various other combinations of two or more ferrite node structures of different sizes can be implemented.

[0027] In some embodiments, the volume fraction of the ferromagnetic material varies across the ferrite layer 132 to provide ferromagnetic properties for improved switching frequency. For example, on a given side of the dielectric slab structure 140, the volume fraction of the ferromagnetic material in the ferrite layer 132 can vary by at least 10% (e.g., at least 20%) between the bottom ten percent sub-layer portion closest to that side of the dielectric slab structure 140 and the top ten percent sub-layer portion furthest from that side of the dielectric slab structure 140.

[0028] Figure 2 Elements of a method 200 for providing the functionality of a transformer according to an embodiment are shown. The method 200 can provide some or all of the functionality of, for example, the system 100. Figures 3A - 3E Corresponding stages 300a - 300e of a process for manufacturing a transformer having the characteristics of, for example, the transformer 130 are shown. The method 200 is described herein with respect to the process for manufacturing structures such as those shown in stages 300a - 300e. However, this description can be extended to apply to the process for manufacturing any transformer structure of various additional or alternative transformer structures detailed herein in various ways.

[0029] The method 200 can include an operation 202 to manufacture a transformer, such as the transformer resulting from the process illustrated in stages 300a - 300e. In an embodiment, the operation 202 includes: at 210, forming a primary winding of a first conductor around a flat structure including a first dielectric. Refer Figure 3A , at process stage 300a, a first conductor can be wound, plated, or otherwise formed around the flat structure 310. For example, where the first conductor includes the illustrated exemplary conductor portions 320, 324, and winding 322.

[0030] The thickness (z-axis dimension) of the flat structure 310 may, for example, be no more than 1.5 mm, and in some embodiments, no more than 1.0 mm. Alternatively or additionally, both the width of the flat structure 310 and the length of the flat structure 310 may be at least twice the thickness of the flat structure 310, for example, at least three times, and in some embodiments, at least five times. However, such dimensions of the flat structure 310 are merely illustrative and may not constitute a limitation for some embodiments. The individual windings in the winding 322 may have a cross-section orthogonal to the direction in which the winding is to conduct current. The height of such a cross-section (perpendicular to the adjacent surface of the flat structure 310) may, for example, be in the range of 0.05 mm to 0.4 mm, for example, where the width of the cross-section (parallel to the adjacent surface of the flat structure 310) is in the range of 0.3 mm to 1.0 mm. In some embodiments, the width of such a cross-section may be at least three times (e.g., at least five times) its thickness. However, such dimensions of the winding 322 are merely illustrative and may not constitute a limitation for some embodiments.

[0031] In an embodiment, operation 202 further includes: at 220, forming a ferrite layer around the flat structure and the primary winding. For example, as Figure 3B shown, a ferrite layer 330 may be sintered, injection molded, stamped, or otherwise formed around the winding 322 and around at least a portion of the flat structure 310. In one embodiment, the consecutive windings in the winding 322 are offset from each other on one or more sides of the flat structure 310, for example, where the ferromagnetic material of the ferrite layer 330 extends between such windings. Depositing such ferromagnetic material between the windings 322 can facilitate improving the coupling between the conductors via the ferrite layer 330. The ferrite layer 330 is shown as transparent merely to illustrate the structure disposed therein.

[0032] The total thickness (z-axis dimension) of the ferrite layer 330 may, for example, be equal to or less than 5 mm, and in some embodiments, equal to or less than 4 mm. Alternatively or additionally, the width of the ferrite layer 330 and the length of the ferrite layer 330 may both be at least twice the thickness of the ferrite layer 330, for example, at least three times, and in some embodiments, at least five times. However, such dimensions of the ferrite layer 330 are merely illustrative and may not constitute a limitation for some embodiments. Although some embodiments are not limited in this regard, an insulating layer may then be deposited around the ferrite layer 330 (e.g., the exemplary insulator 332 shown in stage 300c of Figure 3C . The insulator 332 may include any material such as polytetrafluoroethylene (PTFE), mica, high-density polyethylene (HDPE), or various other insulating materials.

[0033] Operation 202 may further include: at 230, forming a secondary winding of a second conductor around the primary winding and around at least a portion of the ferrite layer. For example, now referring to Figure 3D , a second conductor may be formed around the flat structure 310, the winding 322, at least a portion of the ferrite layer 330, and in some embodiments around the insulator 332 (at stage 300d). As shown in process stage 300d, the second conductor may include conductor portions 340, 344 and a winding 342 therebetween, with the ferrite layer 330 (and in some embodiments, the insulator 332) disposed between the winding 322 and the winding 342.

[0034] Individual windings in the winding 342 may similarly have a cross-section orthogonal to the direction in which the winding is to conduct current. The thickness of such a cross-section (i.e., the height dimension measured perpendicular to the adjacent surface of the insulator 332) may be, for example, in the range of 0.05 mm to 0.8 mm. For example, where the width of the cross-section (measured parallel to the adjacent surface of the flat structure 310) is in the range of 0.3 mm to 1.5 mm. The width of such a cross-section may be at least three times (e.g., at least five times) its thickness. In some embodiments, the average cross-sectional area (the cross-section orthogonal to the direction in which current is to flow through the winding) of one of the windings 342 is at least twice, and in some embodiments at least four times, the corresponding average cross-sectional area of one of the windings 322. However, such dimensions of the winding 342 are merely illustrative and may vary according to the specific details of the implementation.

[0035] In some embodiments, operation 202 further includes an encapsulation structure for the transformer. For example, as shown in stage 300e in Figure 3E , an encapsulation 350 may be injection molded or otherwise formed around the flat structure 310, the ferrite layer 330, the winding 322, and the winding 342. Figure 3E A cross-sectional view 302 of the encapsulated transformer structure at stage 300e is also shown, where view 302 shows the structure extending in the illustrated plane 304. The configuration of one or more conductive winding structures may facilitate improving the switching characteristics of the transformer. For example, a portion (or "winding portion") of the winding of a conductor - for example, a given one of the first conductor and the second conductor - may have a cross-sectional profile conforming to a shape other than any circular shape (e.g., rectangular).

[0036] As used herein, "aspect ratio" (or "height / width ratio") refers to the ratio of the maximum height of a winding portion to the width of the same winding portion. In this particular context, "height" refers to the maximum dimension of the winding portion measured from the side of the flat plate on which the winding portion is disposed and in a direction orthogonal to that side (e.g., along the z-axis in View 302). Also in this context, "width" refers to the dimension of the winding portion along a line in a direction orthogonal to both the height and the direction in which current will flow within the winding portion. For example, as Figure 3A , 3D shown in various ways in, some or all of Windings 322 may have a width w1, where some or all of Windings 342 may have a width w3.

[0037] In an exemplary embodiment, the aspect ratio of one or more winding portions of a conductor (e.g., one or more of Windings 322 and / or one or more of Windings 342) is equal to or less than 0.35 (e.g., where the aspect ratio is equal to or less than 0.20). For example, both Windings 322 and Windings 342 may each have an aspect ratio equal to or less than 0.35. In some embodiments, windings formed by different conductors have different respective aspect ratios. By way of illustration and not limitation, the difference between a first aspect ratio of Winding 322 and a second aspect ratio of Winding 342 may be at least 10% of the second aspect ratio (e.g., at least 20% of the second aspect ratio). Alternatively or in addition, Windings 322 and Windings 342 may have different respective widths, e.g., where the difference between a first cross-sectional width of one of Windings 322 and a second cross-sectional width of Winding 342 is at least 20% of the second cross-sectional width (e.g., at least 30%).

[0038] In some embodiments, additionally or alternatively, the frequency characteristics of the transformer are improved by separating Windings 322 from each other and / or by separating Windings 342 from each other. As used herein, "winding separation distance" (or simply "winding separation") refers to the offset from a given side of the flat plate structure between a primary winding portion extending across the given side and the next subsequent winding portion extending across the given side. The separation distance may be measured along a line parallel to the width of one of the winding portions (e.g., in a direction orthogonal to both the height scale of the winding portion and the direction in which current will flow in the winding portion). Winding separation can mitigate flux interference between consecutive windings.

[0039] For example, as Figure 3A , 3DAs shown in various ways herein, the continuous windings in winding 322 can be offset from each other by a winding separation distance w2. For example, the continuous windings in winding 342 are offset from each other by a winding separation distance w4. As used herein, the "separation width ratio" (or "separation / width ratio") refers to the ratio of the winding separation between consecutive winding portions to the average width of at least one such winding portion. For a winding of a given conductor (e.g., for winding 322 or winding 342), the separation / width ratio of the winding can be at least 10% (e.g., at least 20%, and in some embodiments, at least 40%). In an exemplary embodiment, both winding 322 and winding 342 have a corresponding separation / width ratio of at least 20%. Winding 322 and winding 342 can, for example, have different corresponding separation / width ratios. For example, the difference between a first separation / width ratio w2 / w1 of winding 322 and a second separation / width ratio w4 / w3 of winding 342 is at least 10% of the second separation / width ratio w4 / w3 (e.g., at least 20% of w4 / w3).

[0040] Alternatively or in addition, method 200 can include operation 204 to couple a transformer (e.g., the transformer formed by operation 202) to other circuits, such as other circuits that supply power to and / or receive power from the transformer. For example, operation 204 can include: at 240, coupling a first conductor to a first circuit, e.g., where the first circuit is to supply power to (or receive power from) a transistor via the first conductor. Additionally or alternatively, operation 204 can include: at 250, coupling a second conductor to a second circuit, e.g., where the second circuit is to receive power from (or alternatively supply power to) the transistor via the second conductor.

[0041] In some embodiments, additionally or alternatively, method 200 includes operation 206 to use a transformer, such as the transformer manufactured by operation 202, to transfer power. For example, operation 206 can include: at 260, conducting a first signal via a first conductor using a first circuit. Operation 206 can also include: at 270, conducting a second signal via a second conductor using a second circuit, e.g., where the power transferred by one of the first signal and the second signal is based on the other of the first signal and the second signal.

[0042] Figure 4 A computing device 400 is shown in accordance with one embodiment. The computing device 400 includes a board 402. The board 402 can include a plurality of components, including but not limited to a processor 404 and at least one communication chip 406. The processor 404 is physically and electrically coupled to the board 402. In some implementations, at least one communication chip 406 is also physically and electrically coupled to the board 402. In other implementations, the communication chip 406 is part of the processor 404.

[0043] Depending on its application, computing device 400 may include other components that may or may not be physically and electrically coupled to board 402. These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, graphics processors, digital signal processors, cryptographic processors, chip sets, antennas, displays, touchscreen displays, touchscreen controllers, batteries, audio codecs, video codecs, power amplifiers, global positioning system (GPS) devices, compasses, accelerometers, gyroscopes, speakers, cameras, and mass storage devices (e.g., hard disk drives, compact disks (CDs), digital versatile disks (DVDs), etc.).

[0044] Communication chip 406 enables wireless communication for transferring data to and from computing device 400. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communication channels, etc., that can transfer data by using modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they may not. Communication chip 406 may implement any of several wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 series), WiMAX (IEEE 802.16 series), IEEE 802.20, Long Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, its derivatives, and any other wireless protocols designated as 3G, 4G, 5G, and higher generations. Computing device 400 may include multiple communication chips 406. For example, a first communication chip 406 may be dedicated to short-range wireless communication such as Wi-Fi and Bluetooth, and a second communication chip 406 may be dedicated to long-range wireless communication such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, etc.

[0045] Processor 404 of computing device 400 includes an integrated circuit die encapsulated within processor 404. The term “processor” may refer to any device or portion of a device that processes electronic data from registers and / or memory to transform that electronic data into other electronic data that may be stored in registers and / or memory. Communication chip 406 also includes an integrated circuit die encapsulated within communication chip 406. In an embodiment, motherboard 402 includes or is coupled to a power converter 440 (e.g., including a transformer as described herein) to provide power to processor 404, communication chip 406, and / or other components of computing device 400.

[0046] In various embodiments, computing device 400 can be a laptop computer, netbook, notebook, ultrabook, smartphone, tablet computer, personal digital assistant (PDA), ultra-mobile PC, mobile phone, desktop computer, server, printer, scanner, monitor, set-top box, entertainment control unit, digital camera, portable music player, or digital video recorder. In other embodiments, computing device 400 can be any other electronic device that processes data.

[0047] Some embodiments may be provided as a computer program product or software, which may include a machine-readable medium having instructions stored thereon, the instructions being usable to program a computer system (or other electronic device) to perform a process according to the embodiments. The machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, the machine-readable (e.g., computer-readable) medium includes machine (e.g., computer) readable storage media (e.g., read-only memory (“ROM”), random access memory (“RAM”), magnetic disk storage media, optical storage media, flash memory devices, etc.), machine (e.g., computer) readable transmission media (e.g., electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared signals, digital signals, etc.)), and the like.

[0048] Figure 5 A schematic representation of a machine in an exemplary form of a computer system 500 is shown, within which a set of instructions can be executed to cause the machine to perform any one or more of the methods described herein. In alternative embodiments, the machine can be connected (e.g., networked) to other machines in a local area network (LAN), intranet, extranet, or the Internet. The machine can operate as a server or a client machine in a client-server network environment or as a peer machine in a peer-to-peer (or distributed) network environment. The machine can be a personal computer (PC), tablet PC, set-top box (STB), personal digital assistant (PDA), cellular phone, web appliance, server, network router, switch or bridge, or any machine capable of executing (sequentially or otherwise) a set of instructions that specify actions to be taken by that machine. Further, although only a single machine is shown, the term “machine” shall also be taken to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methods described herein.

[0049] The exemplary computer system 500 includes a processor 502, a main memory 504 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), a static memory 506 (e.g., flash memory, static random access memory (SRAM), etc.), and an auxiliary memory 518 (e.g., a data storage device), which communicate with each other via a bus 530.

[0050] The processor 502 represents one or more general-purpose processing devices, such as a microprocessor, a central processing unit, etc. More specifically, the processor 502 can be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a processor implementing other instruction sets, or a processor implementing a combination of instruction sets. The processor 502 can also be one or more special-purpose processing devices, such as, for example, an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc. The processor 502 is configured to execute processing logic 526 to perform the operations described herein.

[0051] The computer system 500 may also include a network interface device 508. The computer system 500 may also include a video display unit 510 (e.g., a liquid crystal display (LCD), a light-emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 512 (e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and a signal generation device 516 (e.g., a speaker). In an embodiment, a power converter 540 including the transformer described herein is coupled to provide power to the processor 502, the main memory 504, and / or other components of the computer system 500.

[0052] The auxiliary memory 518 may include a machine-accessible storage medium (or more specifically, a computer-readable storage medium) 532, on which is stored a set or sets of instructions (e.g., software 522) embodying any one or more of the methods or functions described herein. The software 522 may also reside, at least partially, within the main memory 504 and / or within the processor 502 during execution by the computer system 500, and the main memory 504 and the processor 502 also constitute a machine-readable storage medium. The software 522 may also be sent or received via the network interface device 508 over a network 520.

[0053] Although the machine-accessible storage medium 532 is shown as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be understood to include a single medium or multiple media (e.g., a centralized or distributed database and / or associated cache memories and servers) that store a set of one or more instructions. The term "machine-readable storage medium" should also be understood to include any medium that is capable of storing or encoding a set of instructions that can be executed by a machine and that cause the machine to perform any one of the one or more embodiments. The term "machine-readable storage medium" should accordingly be understood to include, without limitation, solid-state memories as well as optical and magnetic media.

[0054] In one implementation, a transformer device includes a dielectric slab structure, a first conductor that conducts a first signal, wherein the first conductor forms a primary winding around the dielectric slab structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which the first signal is to flow. The transformer device further includes a ferrite layer disposed around the dielectric slab structure and the primary winding, wherein ferromagnetic material of the ferrite layer extends between consecutive windings of the primary winding, and wherein a volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%). The transformer device further includes a second conductor that conducts a second signal, wherein the second conductor forms a secondary winding around the primary winding and extending around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and wherein the second cross-section is orthogonal to the direction in which the second signal is to flow.

[0055] In one embodiment, a difference between a first width of the first cross-section and a second width of the second cross-section is at least twenty percent of the second width. In another embodiment, for one of the first cross-section and the second cross-section, an aspect ratio of the cross-section is equal to or less than 0.35. In another embodiment, a difference between a first aspect ratio of the first cross-section and a second aspect ratio of the second cross-section is at least ten percent of the second aspect ratio. In another embodiment, for one of the primary winding and the secondary winding, a separation width ratio of the winding is at least 10%. In another embodiment, both the primary winding and the secondary winding have a respective separation width ratio of at least 20%. In another embodiment, a difference between a first separation width ratio of the primary winding and a second separation width ratio of the secondary winding is at least ten percent of the second separation width ratio. In another embodiment, a thickness of the ferrite layer is equal to or less than 5 mm.

[0056] In another embodiment, a method includes fabricating a transformer, comprising: forming a primary winding of a first conductor around a dielectric planar structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which a first signal is to flow in one of the primary windings; and forming a ferrite layer around the first planar structure and the primary winding, wherein the ferromagnetic material of the ferrite layer extends between consecutive windings of the primary winding, and wherein the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%). Fabricating the transformer further includes forming a secondary winding of a second conductor around the primary winding and around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and the second cross-section is orthogonal to the direction in which a second signal is to flow in one of the secondary windings.

[0057] In one embodiment, a difference between a first width of the first cross-section and a second width of the second cross-section is at least twenty percent of the second width. In another embodiment, for one of the first cross-section and the second cross-section, the aspect ratio of the cross-section is equal to or less than 0.35. In another embodiment, a difference between a first aspect ratio of the first cross-section and a second aspect ratio of the second cross-section is at least ten percent of the second aspect ratio. In another embodiment, for one of the primary winding and the secondary winding, the separation width ratio of the winding is at least 10%. In another embodiment, both the primary winding and the secondary winding have a respective separation width ratio of at least 20%. In another embodiment, a difference between a first separation width ratio of the primary winding and a second separation width ratio of the secondary winding is at least ten percent of the second separation width ratio. In another embodiment, the thickness of the ferrite layer is equal to or less than 5 mm. In another embodiment, the method further includes coupling the first conductor to a first circuit and coupling the second conductor to a second circuit. In another embodiment, the method further includes conducting a first signal via the first conductor using the first circuit and conducting a second signal via the second conductor using the second circuit, wherein the power delivered by one of the first signal and the second signal is based on the other of the first signal and the second signal.

[0058] In another embodiment, a system includes a transformer device that includes a dielectric slab structure, a first conductor forming a primary winding around the dielectric slab structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which a first signal is to flow. The transformer device further includes a ferrite layer disposed around the dielectric slab structure and the primary winding, wherein the ferromagnetic material of the ferrite layer extends between successive windings in the primary winding, and wherein the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%). The transformer device further includes a second conductor forming a secondary winding around the primary winding and around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and wherein the second cross-section is orthogonal to the direction in which a second signal is to flow. The system further includes a first circuit coupled to conduct a first signal via the first conductor, a second circuit coupled to conduct a second signal via the second conductor, and a display device coupled to the first circuit and the second circuit, the display device displaying an image based on the first signal and the second signal.

[0059] In one embodiment, the difference between a first width of the first cross-section and a second width of the second cross-section is at least twenty percent of the second width. In another embodiment, for one of the first cross-section and the second cross-section, the aspect ratio of the cross-section is equal to or less than 0.35. In another embodiment, the difference between a first aspect ratio of the first cross-section and a second aspect ratio of the second cross-section is at least ten percent of the second aspect ratio. In another embodiment, for one of the primary winding and the secondary winding, the separation width ratio of the winding is at least 10%. In another embodiment, both the primary winding and the secondary winding have a respective separation width ratio of at least 20%. In another embodiment, the difference between a first separation width ratio of the primary winding and a second separation width ratio of the secondary winding is at least ten percent of the second separation width ratio. In another embodiment, the thickness of the ferrite layer is equal to or less than 5 mm.

[0060] Techniques and architectures for providing inductance in a circuit are described herein. In the foregoing description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of certain embodiments. However, those skilled in the art will appreciate that some embodiments may be practiced without these specific details. In other instances, structures and devices are shown in block diagram form to avoid obscuring the description.

[0061] References to "an embodiment" or "embodiments" in this specification mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in an embodiment" in various places in this specification are not necessarily all referring to the same embodiment.

[0062] Some portions of the specific embodiments herein are presented in terms of algorithms and symbolic representations of operations on data bits within a computer memory. These algorithmic descriptions and representations are the means by which those skilled in the computational arts most effectively convey the substance of their work to others skilled in the art. An algorithm is here, and generally, conceived to be a self-consistent sequence of steps leading to a desired result. The steps are those requiring physical manipulations of physical quantities. Usually, though not necessarily, these quantities take the form of electrical or magnetic signals capable of being stored, transferred, combined, compared, and otherwise manipulated. It has proven convenient at times, for the sake of common usage, to refer to these signals as bits, values, elements, symbols, characters, terms, numbers, etc.

[0063] However, it should be borne in mind that all of these and similar terms are to be associated with the appropriate physical quantities and are merely convenient labels applied to these quantities. Unless specifically stated otherwise, it will be appreciated that throughout the specification, discussions using terms such as "processing" or "computing" or "calculating" or "determining" or "displaying" etc. refer to the actions and processes of a computer system, or similar electronic computing device, that manipulates data represented as physical (electronic) quantities within the registers and memories of the computer system and transforms them into other data similarly represented as physical quantities within the memories or registers or other such information storage, transmission, or display devices of the computer system.

[0064] Certain embodiments also relate to apparatuses for performing the operations herein. The apparatus may be specially constructed for the required purposes, or it may comprise a general-purpose computer selectively activated or reconfigured by a computer program stored in the computer. Such a computer program may be stored in a computer-readable storage medium, which may be, for example but not limited to, any type of disk, including floppy disks, optical disks, CD-ROMs, and magneto-optical disks, read-only memory (ROM), random access memory (RAM) such as dynamic RAM (DRAM), EPROM, EEPROM, magnetic or optical cards, or any type of medium suitable for storing electronic instructions and coupled to a computer system bus.

[0065] The algorithms and displays presented herein are not inherently related to any particular computer or other apparatus. Various general-purpose systems may be used with programs in accordance with the teachings herein, or it may prove convenient to construct more specialized apparatuses to perform the required method steps. The required structure for various of these systems will be apparent from the description herein. In addition, certain embodiments are described without reference to any particular programming language. It will be appreciated that a variety of programming languages may be used to implement the teachings of such embodiments as described herein.

[0066] Except as otherwise described herein, various modifications may be made to the disclosed embodiments and their implementations without departing from their scope. Accordingly, the illustrations and examples herein should be construed in an illustrative rather than a restrictive sense. The scope of the present invention should be measured solely with reference to the following claims.

Claims

1. A transformer device, comprising: Dielectric plate structure; A first conductor that conducts a first signal, wherein the first conductor forms a primary winding around the dielectric plate structure, and wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which the first signal is to flow; A ferrite layer disposed around the dielectric plate structure and the primary winding, wherein the ferromagnetic material of the ferrite layer extends between consecutive primary windings in the primary winding, and wherein the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%); and A second conductor that conducts a second signal, wherein the second conductor forms a secondary winding around the primary winding and extending around a portion of the ferrite layer, and wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and wherein the second cross-section is orthogonal to the direction in which the second signal is to flow.

2. The transformer device according to claim 1, wherein, The difference between a first width of the first cross-section and a second width of the second cross-section is at least twenty percent of the second width.

3. The transformer device according to claim 1, wherein, For one of the first cross-section and the second cross-section, the aspect ratio of the cross-section is equal to or less than 0.

35.

4. The transformer device according to claim 1, wherein, The difference between a first aspect ratio of the first cross-section and a second aspect ratio of the second cross-section is at least ten percent of the second aspect ratio.

5. The transformer device according to claim 1, wherein, For one of the primary winding and the secondary winding, the separation width ratio of the winding is at least 10%.

6. The transformer device according to claim 1, wherein, Both the primary winding and the secondary winding have a respective separation width ratio of at least 20%.

7. The transformer device according to claim 1, wherein, The difference between a first separation width ratio of the primary winding and a second separation width ratio of the secondary winding is at least ten percent of the second separation width ratio.

8. The transformer device according to claim 1, wherein, The thickness of the ferrite layer is equal to or less than 5 mm.

9. A method for manufacturing a transformer, the method comprising: A primary winding of a first conductor formed around a dielectric plate structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which a first signal is to flow in one of the primary windings; A ferrite layer formed around the dielectric plate structure and the primary winding, wherein the ferromagnetic material of the ferrite layer extends between consecutive primary windings in the primary winding, and wherein the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%); and A secondary winding of a second conductor formed around the primary winding and around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and the second cross-section is orthogonal to the direction in which a second signal is to flow in one of the secondary windings.

10. The method according to claim 9, wherein, The difference between a first width of the first cross-section and a second width of the second cross-section is at least twenty percent of the second width.

11. The method according to claim 9, wherein, For one of the first cross-section and the second cross-section, the aspect ratio of the cross-section is equal to or less than 0.

35.

12. The method according to claim 9, wherein, The difference between a first aspect ratio of the first cross-section and a second aspect ratio of the second cross-section is at least ten percent of the second aspect ratio.

13. The method according to claim 9, wherein, For one of the primary winding and the secondary winding, the separation width ratio of the winding is at least 10%.

14. The method according to claim 9, wherein, Both the primary winding and the secondary winding have respective separation width ratios of at least 20%.

15. The method according to claim 9, wherein, The difference between the first separation width ratio of the primary winding and the second separation width ratio of the secondary winding is at least ten percent of the second separation width ratio.

16. The method according to claim 9, wherein, The thickness of the ferrite layer is equal to or less than 5 mm.

17. A system for transmitting electric power, comprising: A transformer device, the transformer device comprising: A dielectric plate structure; A first conductor that forms a primary winding around the dielectric plate structure, wherein a first cross-section of one of the primary windings conforms to a first shape other than any circle, and wherein the first cross-section is orthogonal to the direction in which a first signal is to flow; A ferrite layer disposed around the dielectric plate structure and the primary winding, wherein the ferromagnetic material of the ferrite layer extends between consecutive primary windings in the primary winding, and wherein the volume fraction of the ferromagnetic material in the ferrite layer is equal to or less than ninety-seven percent (97%); and A second conductor that forms a secondary winding around the primary winding and around a portion of the ferrite layer, wherein a second cross-section of one of the secondary windings conforms to a second shape other than any circle, and wherein the second cross-section is orthogonal to the direction in which a second signal is to flow; A first circuit coupled to conduct a first signal via the first conductor; A second circuit coupled to conduct a second signal via the second conductor; and A display device coupled to the first circuit and the second circuit, the display device displaying an image based on the first signal and the second signal.

18. The system according to claim 17, wherein, The difference between the first width of the first cross-section and the second width of the second cross-section is at least twenty percent of the second width.

19. The system according to claim 17, wherein, For one of the first cross-section and the second cross-section, the aspect ratio of the cross-section is equal to or less than 0.

35.

20. The system according to claim 17, wherein, The difference between the first aspect ratio of the first cross-section and the second aspect ratio of the second cross-section is at least ten percent of the second aspect ratio.

21. The system according to claim 17, wherein, For one of the primary winding and the secondary winding, the separation width ratio of the winding is at least 10%.

22. The system according to claim 17, wherein, The thickness of the ferrite layer is equal to or less than 5 mm.

Images