Substrate processing device

Abstract

The present invention provides a substrate processing device, which includes a transport block and a plurality of processing blocks. The transport block is provided with a transport device for transporting substrates. A plurality of processing blocks are arranged adjacent to the transport block to process substrates transported by the transport device. In addition, each processing block includes a liquid processing component and a drying component. The liquid processing component performs a liquid film forming process for forming a liquid film on the upper surface of the substrate. The drying component performs a supercritical drying process, which dries the substrate after the liquid film forming process by bringing the substrate after the liquid film forming process into contact with a processing fluid in a supercritical state. Moreover, the liquid processing component and the drying component contained in the same processing block are arranged on the same side relative to the moving direction of the transport device of the transport block. The present invention can optimize a series of substrate processes including liquid processing and supercritical drying processes.

Description

Technical Field

[0001] An embodiment of the present invention relates to a technology for removing liquid adhering to the surface of a substrate using a processing fluid in a supercritical state. Background Art

[0002] Conventionally, there has been known a supercritical drying process in which, after treating the surface of a substrate such as a semiconductor wafer with a liquid, the substrate, whose surface is wetted by the liquid, is brought into contact with a supercritical fluid to dry the substrate.

[0003] As a substrate processing device for performing supercritical drying treatment, Patent Document 1 discloses a substrate processing device, wherein a first chamber for performing liquid treatment on a substrate and a second chamber for performing supercritical drying treatment on the liquid-treated substrate are arranged opposite to each other across a substrate transport area.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent No. 5497114 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] However, in the above-mentioned prior art, there is still room for improvement in optimizing a series of substrate treatments including liquid treatment and supercritical drying treatment.

[0009] For example, in the substrate processing apparatus described in Patent Document 1, a transport robot positioned in the transport area removes a liquid-treated substrate from a first chamber, then rotates about the θ-axis to transport the liquid-treated substrate into a second chamber. Therefore, when the transport robot rotates about the θ-axis, there is a possibility that liquid on the substrate may be thrown off the substrate, potentially affecting the supercritical drying process.

[0010] An object of one aspect of the embodiment is to provide a substrate processing apparatus capable of optimizing a series of substrate processing including liquid processing and supercritical drying processing.

[0011] Technical solutions to technical problems

[0012] A substrate processing device according to one embodiment includes a transport block and a plurality of processing blocks. The transport block is provided with a transport device for transporting substrates. A plurality of processing blocks are arranged adjacent to the transport block to process substrates transported by the transport device. In addition, each processing block includes a liquid processing component and a drying component. The liquid processing component performs a liquid film forming process for forming a liquid film on the upper surface of the substrate. The drying component performs a supercritical drying process for drying the substrate after the liquid film forming process by bringing the substrate after the liquid film forming process into contact with a processing fluid in a supercritical state. Moreover, the liquid processing component and the drying component included in the same processing block are arranged on the same side relative to the moving direction of the transport device of the transport block.

[0013] Effects of the Invention

[0014] According to one mode of embodiment, a series of substrate processing including liquid processing and supercritical drying processing can be optimized. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 1 is a schematic cross-sectional view of a substrate processing system according to an embodiment as viewed from above.

[0016] Figure 2 This is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from the side.

[0017] Figure 3 This is a flowchart showing a series of substrate processing steps executed in the substrate processing system according to the embodiment.

[0018] Figure 4 It is a diagram showing the wafer transport procedure.

[0019] Figure 5 Yes Figure 4 FIG. 1 is a diagram showing an example of the operation of the transport device in step S3.

[0020] Figure 6 It is a diagram showing a structural example of a liquid processing module.

[0021] Figure 7 It is a schematic perspective view showing a structural example of a drying unit.

[0022] Figure 8A is a schematic cross-sectional view of the junction area.

[0023] Figure 8B is a schematic cross-sectional view of the junction area.

[0024] Figure 9 It is a diagram showing a configuration example of an exhaust path in a processing block.

[0025] Figure 10AThis is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from the rear.

[0026] Figure 10B This is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from the rear.

[0027] Description of Reference Numerals

[0028] W chip

[0029] 1. Substrate processing system

[0030] 4 Transport Blocks

[0031] 5 Processing Blocks

[0032] 14 Handover Department

[0033] 15 Delivery Areas

[0034] 16 Conveyor

[0035] 17 Liquid handling components

[0036] 18 Drying components

[0037] 19 Supply Components

[0038] 181 Processing Area

[0039] 182 Handover Area DETAILED DESCRIPTION

[0040] Below, with reference to the accompanying drawings, a detailed description will be given of a method for implementing the substrate processing apparatus of the present invention (hereinafter referred to as an "embodiment"). The substrate processing apparatus of the present invention is not limited to this embodiment. Furthermore, the various embodiments can be combined as appropriate to the extent that no conflicting processing occurs. In the following embodiments, identical components are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0041] (1. Structure of substrate processing system)

[0042] First, refer to Figure 1 and Figure 2 , describing the structure of a substrate processing system (an example of a substrate processing apparatus) according to an embodiment. Figure 1 This is a schematic cross-sectional view of a substrate processing system according to an embodiment of the present invention as viewed from above. Figure 2 In addition, in the following content, in order to clarify the positional relationship, the X axis, Y axis and Z axis are defined as being orthogonal to each other, and the positive direction of the Z axis is the vertically upward direction.

[0043] like Figure 1As shown, the substrate processing system 1 includes a feeding station 2 and a processing station 3. The feeding station 2 and the processing station 3 are arranged adjacent to each other.

[0044] (Entry and Exit Station 2)

[0045] The loading and unloading station 2 includes a carrier placement unit 11 and a transport unit 12. The carrier placement unit 11 places a plurality of carriers C that store a plurality of semiconductor wafers W (hereinafter referred to as "wafers W") in a horizontal state.

[0046] The transport unit 12 is provided adjacent to the carrier placement unit 11. Inside the transport unit 12, a transport device 13 and a delivery unit 14 are arranged.

[0047] The transport device 13 includes a wafer holding mechanism for holding the wafer W. The transport device 13 is movable in the horizontal and vertical directions and rotatable about a vertical axis, and transports the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0048] (Processing Station 3)

[0049] The processing station 3 is disposed adjacent to the transport portion 12. The processing station 3 includes a transport block 4 and a plurality of processing blocks 5.

[0050] (Transport Block 4)

[0051] The transport block 4 includes a transport area 15 and a transport device 16. The transport area 15 is, for example, a rectangular parallelepiped area extending along the arrangement direction (X-axis direction) of the inlet / outlet stations 2 and the processing stations 3. The transport device 16 is disposed in the transport area 15.

[0052] The transport device 16 is provided with a wafer holding mechanism for holding the wafer W. The transport device 16 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and uses the wafer holding mechanism to transport the wafer W between the interface 14 and the plurality of processing blocks 5.

[0053] (Configuration of processing block 5)

[0054] The plurality of processing blocks 5 are arranged adjacent to the transport area 15 on both sides thereof. Specifically, the plurality of processing blocks 5 are arranged on one side (positive Y-axis side) and the other side (negative Y-axis side) of the transport area 15 in a direction (Y-axis direction) perpendicular to the arrangement direction (X-axis direction) of the inlet / outlet station 2 and the processing station 3.

[0055] In addition, if Figure 2 As shown, the plurality of processing blocks 5 are arranged in multiple layers in the vertical direction. In this embodiment, the number of layers of the plurality of processing blocks 5 is three, but the number of layers of the plurality of processing blocks 5 is not limited to three.

[0056] As described above, in the substrate processing system 1 of the embodiment, the plurality of processing blocks 5 are arranged in multiple layers on both sides of the transport block 4. Therefore, wafers W are transported between the processing blocks 5 arranged in each layer and the interface 14 by a single transport device 16 arranged in the transport block 4.

[0057] (Internal structure of processing block 5)

[0058] Each processing block 5 includes a liquid processing component 17 , a drying component 18 and a supply component 19 .

[0059] The liquid processing module 17 performs a cleaning process for cleaning the pattern forming surface, ie, the upper surface, of the wafer W. The liquid processing module 17 also performs a liquid film forming process for forming a liquid film on the upper surface of the cleaned wafer W. The structure of the liquid processing module 17 will be described later.

[0060] The drying module 18 performs a supercritical drying process on the wafer W after the film forming process. Specifically, the drying module 18 dries the wafer W by bringing the wafer W after the film forming process into contact with the process fluid in a supercritical state. The structure of the drying module 18 will be described later.

[0061] Supply assembly 19 supplies the treatment fluid to drying assembly 18. Specifically, supply assembly 19 includes a supply equipment group including a flow meter, flow regulator, back pressure valve, heater, etc., and a housing for housing the supply equipment group. In this embodiment, supply assembly 19 supplies CO2 as the treatment fluid to drying assembly 18.

[0062] Liquid processing assembly 17, drying assembly 18, and supply assembly 19 are arranged along transport area 15 (i.e., along the X-axis). Of these, liquid processing assembly 17, drying assembly 18, and supply assembly 19, liquid processing assembly 17 is positioned closest to inlet / outlet station 2, while supply assembly 19 is positioned furthest from the inlet / outlet station 2.

[0063] As described above, each processing block 5 is provided with a liquid processing assembly 17, a drying assembly 18, and a supply assembly 19. That is, the same number of liquid processing assemblies 17, conveying devices 16, and supply assemblies 19 are provided in the substrate processing system 1.

[0064] The drying assembly 18 includes a processing area 181 for performing supercritical drying and a delivery area 182 for delivering wafers W between the transport block 4 and the processing area 181 . The processing area 181 and the delivery area 182 are arranged along the transport area 15 .

[0065] Specifically, of the processing area 181 and the delivery area 182, the delivery area 182 is arranged closer to the liquid processing assembly 17 than the processing area 181. That is, in each processing block 5, the liquid processing assembly 17, the delivery area 182, the processing area 181, and the supply assembly 19 are arranged in this order along the transport area 15.

[0066] (Control device 6)

[0067] The substrate processing system 1 is provided with a control device 6. The control device 6 is, for example, a computer, and is provided with a control unit 61 and a storage unit 62.

[0068] The control unit 61 includes a microcomputer with a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input and output ports, and various circuits. The CPU of the microcomputer reads and executes programs stored in the ROM to control the conveying devices 13 and 16, the liquid processing unit 17, the drying unit 18, and the supply unit 19.

[0069] The program is stored in a computer-readable storage medium and can be installed from the storage medium into the storage unit 62 of the control device 6. Examples of the computer-readable storage medium include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0070] The storage unit 62 can be realized by, for example, a semiconductor storage element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0071] (2. Delivery Process)

[0072] Next, refer to Figures 3 to 5 , describing the transport process of the wafer W in the above-mentioned substrate processing system 1. Figure 3 1 is a flowchart showing a series of substrate processing steps executed in the substrate processing system 1 of the embodiment. Figure 4 : is a diagram showing the conveying steps of the wafer W. In addition, Figure 5 Yes Figure 4 FIG. 1 is a diagram showing an example of the operation of the transport device 16 in step S3. Figure 3 A series of substrate processing is shown.

[0073] like Figure 3 As shown, in the substrate processing system 1, first, the feeding process is performed (step S101). During the feeding process, the transport device 13 (refer to Figure 1) Take out the wafer W from the carrier C and place it on the transfer section 14 (see Figure 4 Then, the transport device 16 (refer to Figure 1 ) Take out the wafer W from the interface 14 and send it to the liquid processing assembly 17 (refer to Figure 4 Step S2).

[0074] Next, in the substrate processing system 1, the wafer W is cleaned in the liquid processing module 17 (step S102). The liquid processing module 17 removes particles, natural oxide films, etc. from the upper surface of the wafer W by supplying various processing liquids to the upper surface of the wafer W, which is the pattern forming surface.

[0075] Next, in the substrate processing system 1, a liquid film forming process is performed on the wafer W in the liquid processing module 17 (step S103). The liquid processing module 17 supplies liquid IPA (hereinafter referred to as "IPA liquid") to the upper surface of the wafer W after the cleaning process, thereby forming an IPA liquid film on the upper surface of the wafer W.

[0076] The wafer W after the liquid film formation process is transported by the transport device 16 to the transfer area 182 of the drying assembly 18 disposed in the same processing block 5 (see Figure 4 Step S3).

[0077] Specifically, if Figure 5 As shown, after the transport device 16 moves to a position facing the liquid treatment assembly 1, the wafer holding mechanism enters the liquid treatment assembly 17 and takes out the wafer W after the liquid film formation process from the liquid treatment assembly 17 (refer to Figure 5 (see above).

[0078] Next, the transport device 16 moves horizontally along the transport area 15, thereby transporting the wafer W after the liquid film formation process to a position facing the delivery area 182 of the drying assembly 18 (see FIG. Figure 5 At this time, the transport device 16 maintains the state in which the wafer W after the liquid film formation process is taken out from the liquid processing module 17. Specifically, the wafer holding mechanism is maintained facing the processing block 5 as the processing target, and slides in the horizontal direction.

[0079] Afterwards, the transport device 16 causes the wafer holding mechanism to enter the delivery area 182 and delivers the wafer W after the liquid film formation process to the drying assembly 18 (see Figure 5 In addition, Figure 5 In the figure, only the horizontal movement is illustrated, but when the height of the chip W placed in the liquid processing component 17 is different from the height of the chip W placed in the transfer area 182, in order to adjust the difference in height during the transportation of the chip W, control is applied to make the transport device 16 move vertically.

[0080] As described above, in the substrate processing system 1 of the embodiment, the liquid processing assembly 17 and the drying assembly 18 contained in the same processing block 5 are arranged on the same side relative to the moving direction (here, the horizontal direction (X-axis direction)) of the conveying device 16 of the conveying block 4. As a result, it is possible to optimize substrate processing in terms of simplifying and speeding up the conveying operation. For example, when the liquid processing assembly 17 and the drying assembly 18 are arranged on opposite sides relative to the moving direction of the conveying device 16 of the conveying block 4, the conveying device 16 needs to perform a rotational movement centered around the θ-axis (vertical axis) when transporting the wafer W after the liquid film formation process from the liquid processing assembly 17 to the drying assembly 18. In contrast, in the substrate processing system 1 of this embodiment, this rotational movement is not required. Therefore, by performing a rotational movement centered around the θ-axis, there is no possibility that the liquid film formed on the upper surface of the wafer W will be thrown off the wafer W. In addition, compared to the case where a rotational movement is performed, the transport time of the wafer W after the liquid film formation process from the liquid processing assembly 17 to the drying assembly 18 can be shortened. In addition, the "moving direction of the transport device 16" in this specification refers to the direction of movement in the horizontal direction (here, the X-axis direction) or the vertical direction (Z-axis direction), and does not include the forward and backward direction of the chip holding mechanism (here, the Y-axis direction).

[0081] Furthermore, the transport device 16 transports wafers W after the liquid film forming process between the liquid processing module 17 and the drying module 18 included in the same processing block 5. The liquid processing module 17 and the drying module 18 are arranged one-to-one in each processing block 5. Therefore, for example, compared to a substrate processing apparatus in which a plurality of drying modules are provided for one liquid processing module, it is possible to achieve a more uniform transport time for wafers W after the liquid film forming process from the liquid processing module 17 to the drying module 18.

[0082] That is, in a substrate processing apparatus in which multiple drying modules are provided for a single liquid processing module, there is a difference in transport time between the wafers processed after liquid film formation being transported to a drying module located near the liquid processing module and the wafers processed after liquid film formation being transported to a drying module located farther away from the liquid processing module. In contrast, in the substrate processing system 1 of the embodiment, wafers W processed after liquid film formation by a single liquid processing module 17 are transported to a single drying module 18 located in the same processing block 5 as the liquid processing module 17. Therefore, there is less chance of transport time difference.

[0083] Furthermore, in each processing block 5, the interface area 182 of the drying module 18 is positioned adjacent to the liquid processing module 17. Specifically, of the processing area 181 and the interface area 182 included in the drying module 18, the interface area 182 is positioned closer to the liquid processing module 17, while the processing area 181 is positioned farther from the liquid processing module 17 than the interface area 182. Therefore, compared to a case where the processing area 181 is positioned near the liquid processing module 17, the time required to transport the wafers W after the liquid film formation process can be further shortened.

[0084] Furthermore, the processing area 181 and the delivery area 182 are arranged along the transport block 4. Therefore, compared with a case where the processing area 181 is arranged further back than the delivery area 182 when viewed from the transport block 4, access to the delivery area 182 during maintenance is easier.

[0085] In addition, multiple processing blocks 5 are arranged in multiple layers (see Figure 2 ) Therefore, according to the substrate processing system 1 of the embodiment, it is possible to suppress an increase in the occupied space.

[0086] return Figure 3 Continuing to describe a series of substrate processing. The wafer W after the liquid film formation process is transported to the delivery area 182 and is transported from the delivery area 182 to the processing area 181 (refer to Figure 4 Then, in the substrate processing system 1, a supercritical drying process is performed in the processing area 181 (step S104). In the supercritical drying process, the drying assembly 18 dries the wafer W after the liquid film forming process by bringing the wafer W into contact with the processing fluid in a supercritical state.

[0087] Next, the substrate processing system 1 performs a delivery process (step S105). In the delivery process, first, the wafer W after the supercritical drying process is transported from the processing area 181 to the delivery area 182 (see Figure 4 Then, the transport device 16 takes out the wafer W after the supercritical drying process from the delivery area 182 and transports it to the delivery portion 14 (see Figure 4 Then, the transport device 13 takes out the wafer W after the supercritical drying process from the transfer unit 14 and transports it to the carrier C (see Figure 4 When the sending-out process is completed, a series of substrate processes for one wafer W is completed.

[0088] like Figure 1As shown, in the substrate processing system 1 of the embodiment, the processing block 5 arranged on one side of the transport block 4 and the processing block 5 arranged on the other side of the transport block 4 are arranged symmetrically across the transport block 4 when viewed from above. Therefore, when observing one layer, Figure 4 The transport timing of the wafer W in steps S2 to S6 is the same in both the processing block 5 arranged on one side of the transport block 4 and the processing block 5 arranged on the other side of the transport block 4 .

[0089] (3. Structure of Liquid Handling Components)

[0090] Next, refer to Figure 6 , describing the structure of the liquid processing component 17. Figure 6 1 is a diagram showing a configuration example of the liquid processing module 17. The liquid processing module 17 is configured as, for example, a single-wafer cleaning apparatus that cleans wafers W one by one by spin cleaning.

[0091] like Figure 6 As shown, the liquid processing module 17 holds the wafer W substantially horizontally using a wafer holding mechanism 25 disposed within an outer chamber 23 forming a processing space, and rotates the wafer holding mechanism 25 about a vertical axis to rotate the wafer W. Furthermore, the liquid processing module 17 positions a nozzle arm 26 above the rotating wafer W and supplies a chemical liquid or a rinse liquid from a chemical liquid nozzle 26a provided at the front end of the nozzle arm 26 in a predetermined order, thereby performing a cleaning process on the upper surface of the wafer W.

[0092] In the liquid processing module 17, a chemical liquid supply path 25a is also formed inside the wafer holding mechanism 25. The lower surface of the wafer W can be cleaned using the chemical liquid or rinse liquid supplied through the chemical liquid supply path 25a.

[0093] The cleaning process, for example, initially uses an alkaline solution such as SC1 (a mixture of ammonia and hydrogen peroxide) to remove particles and organic contaminants, followed by rinsing with deionized water (DIW). Next, the natural oxide film is removed using an acidic solution such as dilute hydrofluoric acid (DHF), followed by rinsing with DIW.

[0094] The various liquid medicines described above can be received by the outer chamber 23 and the inner cup 24 disposed therein, and can be discharged from a drain port 23a provided at the bottom of the outer chamber 23 and a drain port 24a provided at the bottom of the inner cup 24. Furthermore, the atmosphere within the outer chamber 23 can be exhausted from an exhaust port 23b provided at the bottom of the outer chamber 23.

[0095] The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid processing module 17 rotates the wafer holding mechanism 25 while supplying IPA liquid to the upper and lower surfaces of the wafer W. This replaces the DIW remaining on both surfaces of the wafer W with IPA. The liquid processing module 17 then slowly stops the rotation of the wafer holding mechanism 25.

[0096] After the liquid film formation process, the wafer W, with the IPA liquid film formed on its upper surface, is transferred to the transport device 16 by a transfer mechanism (not shown) provided on the wafer holding mechanism 25 and is then transferred out of the liquid processing module 17. The liquid film formed on the wafer W prevents pattern collapse caused by evaporation (gasification) of the liquid on the upper surface of the wafer W during the process of transferring the wafer W from the liquid processing module 17 to the drying module 18 and during the process of loading the wafer W into the drying module 18.

[0097] (4. Structure of drying components)

[0098] Next, refer to Figure 7 , illustrating the structure of the drying component 18. Figure 7 It is a schematic perspective view showing a structural example of the drying unit 18 .

[0099] like Figure 7 As shown, the drying assembly 18 includes a processing container 31 , a holding body 32 and a cover 33 .

[0100] The processing container 31 is a pressure container capable of forming a high pressure environment of about 16 to 20 MPa. The processing container 31 is arranged in the processing area 181 (see Figure 1 ), the supercritical drying process is carried out in the processing space 31a inside the processing container 31. Figure 1 ) An opening 31b is formed on the side of the processing container 31 opposite to the processing space 31a, which connects the processing space 31a and the interface area 182.

[0101] The holder 32 holds the wafer W in a horizontal orientation. The cover 33 supports the holder 32. The cover 33 is connected to a moving mechanism (not shown) and moves horizontally with the holder 32 between the processing area 181 and the interface area 182. By moving toward the processing area 181, the holder 32 can be positioned within the processing space 31a of the processing container 31, and the cover 33 closes the opening 31b of the processing space 31a.

[0102] The processing container 31 is provided with a supply port 35 and an exhaust port 37. The supply port 35 is connected to a supply pipe 101 for circulating the processing fluid supplied to the processing space 31a. The supply pipe 101 is connected to the supply machine group of the supply assembly 19. The exhaust port 37 is connected to an independent exhaust pipe 102 for circulating the processing fluid discharged from the processing space 31a.

[0103] The supply port 35 is provided on the side surface of the processing container 31 opposite to the side where the opening 31b is formed. In addition, the discharge port 37 is provided on the bottom surface of the processing container 31. Figure 7 One supply port 35 and one discharge port 37 are shown in FIG. 3 , but the number of the supply ports 35 and the discharge ports 37 is not particularly limited.

[0104] The processing space 31a is provided with a supply head 38 and a discharge head 40. The supply head 38 is connected to the supply port 35 to supply the processing fluid to the processing space 31a. The discharge head 40 is connected to the discharge port 37 to discharge the processing fluid from the processing space 31a.

[0105] The supply head 38 is provided with a plurality of supply ports 38a along the longitudinal direction (Y-axis direction) of the supply head 38. The plurality of supply ports 38a open toward the opening 31b. The discharge head 40 is provided with a plurality of discharge ports 40a along the longitudinal direction (Y-axis direction) of the discharge head 40. The plurality of discharge ports 40a open upward.

[0106] The drying assembly 18 supplies the treatment fluid to the processing space 31a from the multiple supply ports 38a of the supply head 38, and discharges the treatment fluid in the processing space 31a through the multiple discharge ports 40a of the discharge head 40. A damper is provided in the discharge path of the treatment fluid to adjust the discharge amount of the treatment fluid from the processing space 31a. The discharge amount of the treatment fluid is adjusted by the regulator, and the pressure in the processing space 31a can be adjusted to the desired pressure. Thus, the supercritical state of the treatment fluid is maintained in the processing space 31a. Hereinafter, the treatment fluid in the supercritical state is referred to as "supercritical fluid".

[0107] In the processing space 31a, a laminar flow of the supercritical fluid is formed, flowing in a predetermined direction around the wafer W. For example, the laminar flow of the supercritical fluid flows from the supply head 38 above the wafer W, along the upper surface of the wafer W, toward the upper portion of the opening 31b. The laminar flow of the supercritical fluid then changes direction downward above the opening 31b, passes near the opening 31b, and flows toward the discharge head 40.

[0108] In this laminar flow example, a laminar flow of the supercritical fluid passes through the opening 32 a formed between the wafer W in the holder 32 and the cover 33 in the interior of the processing space 31 a .

[0109] The IPA liquid on the pattern-forming surface (top surface) of the wafer W comes into contact with the supercritical fluid at a high pressure (e.g., 16 MPa), gradually dissolving in the supercritical fluid and ultimately being replaced by the supercritical fluid. As a result, the gaps between the patterns are filled with the supercritical fluid.

[0110] Thereafter, the drying unit 18 reduces the pressure of the processing space 31a from the high pressure state to the atmospheric pressure, thereby changing the supercritical fluid filling the gaps between the patterns into a normal state, that is, a gaseous processing fluid.

[0111] As described above, after the IPA liquid on the pattern forming surface is replaced with the supercritical fluid, the drying unit 18 returns the supercritical fluid to a gaseous processing fluid, thereby removing the IPA liquid from the pattern forming surface and drying the pattern forming surface.

[0112] Supercritical fluids have lower viscosity than liquids (e.g., IPA liquid) and a higher ability to dissolve liquids. Furthermore, there is no interface between the supercritical fluid and the liquid or gas in equilibrium. Therefore, supercritical drying can dry the liquid without being affected by surface tension. This prevents pattern collapse during drying.

[0113] In addition, in the embodiment, IPA liquid is used as the liquid for preventing drying and CO2 is used as the processing fluid, but liquids other than IPA can also be used as the liquid for preventing drying, and fluids other than CO2 can also be used as the processing fluid.

[0114] like Figure 7 As shown, the processing container 31 has a first protrusion 31c and a second protrusion 31d that protrude further inward from the opening 31b in the lid opening direction (here, in the negative direction of the X axis). The first protrusion 31c protrudes from the bottom of the opening 31b in the negative direction of the X axis, and the second protrusion 31d protrudes from the top of the opening 31b in the negative direction of the X axis.

[0115] The first protrusion 31c has a plurality of (here, two) first insertion holes 31e formed therein, connecting the upper and lower surfaces of the first protrusion 31c. Furthermore, the second protrusion 31d has a plurality of (here, two) second insertion holes 31f formed therein, connecting the upper and lower surfaces of the second protrusion 31d, at positions opposite the plurality of first insertion holes 31e.

[0116] Furthermore, the drying unit 18 is provided with a plurality of (two in this example) locking members 42. The locking members 42 are respectively inserted into a plurality of first insertion holes 31e formed in the first protrusion 31c.

[0117] Here, refer to Figure 8A and Figure 8B, explaining the action of the locking component 42. Figure 8A and Figure 8B is a schematic cross-sectional view of the junction area 182. In addition, Figure 8A The holding body 32 and the cover body 33 are arranged in the interface area 182. Figure 8B The state where the holding body 32 and the cover body 33 are arranged in the processing area 181 is shown.

[0118] like Figure 8A As shown, the locking member 42 is connected to a lifting mechanism 43 that lifts and lowers the locking member 42 .

[0119] like Figure 8B As shown, the drying unit 18 first moves the holder 32 and the cover 33 using a moving mechanism (not shown), thereby sealing the processing space 31a with the cover 33. Then, the drying unit 18 raises the locking member 42 using the lifting mechanism 43, so that the locking member 42 is inserted into the second insertion hole 31f formed in the second protrusion 31d.

[0120] The locking member 42 presses the lid 33 toward the processing space 31 a against the internal pressure of the supercritical fluid supplied to the processing space 31 a .

[0121] The interface region 182 is covered by the housing 821 . The housing 821 houses the cover 33 and the holder 32 .

[0122] The housing 821 is connected to the first exhaust pipe 201, which circulates the atmosphere exhausted from the housing 821. Furthermore, the second protrusion 31d is connected to the second exhaust pipe 202. Specifically, the second exhaust pipe 202 is connected to the second insertion hole 31f via a buffer 223. The buffer 223 has an internal space larger than the second insertion hole 31f.

[0123] Second exhaust pipe 202 and buffer 223 are provided to exhaust the space within which locking member 42 moves (specifically, the space between first and second insertion holes 31e, 31f and first and second protrusions 31c, 31d). In this space, particles may be generated due to friction between locking member 42 and lid 33 or processing container 31 during the movement of locking member 42. According to drying assembly 18, by using second exhaust pipe 202 and buffer 223 to exhaust the space within which locking member 42 moves, particles generated by the movement of locking member 42 can be efficiently discharged to the exterior of interface area 182.

[0124] During the supercritical drying process, the processing container 31 reaches a high temperature, for example, around 100 degrees Celsius, generating an upward airflow within the second insertion hole 31f. If the second exhaust pipe 202 were directly connected to the second insertion hole 31f, the exhaust airflow would collide with the upward airflow, causing turbulence. By providing the buffer 223, however, the exhaust airflow and the upward airflow are prevented from directly colliding, thus minimizing turbulence. Consequently, particles can be discharged more efficiently.

[0125] (5. Structure of the exhaust path in the processing block)

[0126] Next, refer to Figure 9 , describing the structure of the exhaust path of processing block 5. Figure 9 1 is a diagram showing a configuration example of an exhaust path in the processing block 5 .

[0127] like Figure 9 As shown, each processing block 5 is divided into a liquid processing block 51, which is equipped with a liquid processing assembly 17, and a drying block 52, which is equipped with a drying assembly 18 and a supply assembly 19. Liquid processing block 51 and drying block 52 are separated by a partition wall. Furthermore, multiple drying blocks 52 are arranged in multiple layers, each separated by a partition wall.

[0128] A first common exhaust duct 100 and a second common exhaust duct 200 are installed in the drying block 52. The first common exhaust duct 100 and the second common exhaust duct 200 extend vertically, penetrating the multiple processing blocks 5 arranged in multiple layers. In other words, the first common exhaust duct 100 and the second common exhaust duct 200 are shared by the multiple processing blocks 5 arranged in multiple layers. Specifically, one first common exhaust duct 100 and one second common exhaust duct 200 are located on each side of the conveying block 4.

[0129] The second common exhaust pipe 200, drying assembly 18, supply assembly 19, and first common exhaust pipe 100 are arranged in the order shown above, starting from the liquid processing block 51. Specifically, the first common exhaust pipe 100 is positioned near supply assembly 19 of the drying assembly 18 and the supply assembly 19, while the second common exhaust pipe 200 is positioned near drying assembly 18 of the drying assembly 18 and the supply assembly 19.

[0130] The first common exhaust pipe 100 is used to exhaust the supercritical fluid from the drying assembly 18. Specifically, the first common exhaust pipe 100 is connected to an individual exhaust pipe 102 provided on each floor of the multi-layered drying blocks 52. The supercritical fluid is supplied from the supply assembly 19 via the supply pipe 101 to the processing container 31 of the drying assembly 18. The supercritical fluid flows through the individual exhaust pipe 102 into the first common exhaust pipe 100 and is discharged from the first common exhaust pipe 100 to the exterior of the processing block 5.

[0131] Furthermore, the first common exhaust pipe 100 is connected to a block exhaust pipe 103 for exhausting the atmosphere in each drying block 52. The block exhaust pipe 103 is provided with a pump 131 and a regulator 132 for adjusting the opening of the block exhaust pipe 103.

[0132] The block exhaust pipes 103, pumps 131, and regulators 132 are provided on each layer of the multi-layered drying blocks 52. As described above, in the substrate processing system 1, the layers of the multi-layered drying blocks 52 are separated, and the atmosphere within each drying block 52 is exhausted individually. Since a processing fluid heated to a predetermined temperature is supplied to the processing region 181, there is a possibility that the temperature of the atmosphere may vary between the drying blocks 52. However, the above-described configuration can minimize the effects of these temperature differences between the drying blocks 52.

[0133] Furthermore, in the substrate processing system 1, a single first common exhaust pipe 100 is connected to an independent exhaust pipe 102 for exhausting a supercritical fluid or a processing fluid from the processing container 31 and a block exhaust pipe 103 for exhausting the atmosphere within the drying block 52. Thus, for example, when the supercritical fluid or the processing fluid is exhausted from the processing container 31, the exhaust volume of the atmosphere within the drying block 52 is adjusted using the regulator 132 of the block exhaust pipe 103. This allows for suppressing pressure fluctuations within the first common exhaust pipe 100 caused by the exhaust of the supercritical fluid or the processing fluid.

[0134] The block exhaust pipe 103 is shaped to protrude from the first common exhaust pipe 100 . This prevents the supercritical fluid or the processing fluid discharged from the processing container 31 from flowing back through the first common exhaust pipe 100 and out of the block exhaust pipe 103 .

[0135] Next, the second common exhaust duct 200 will be described. The second common exhaust duct 200 is used to exhaust the interface area 182.

[0136] Specifically, the second common exhaust pipe 200 is connected to the first exhaust pipe 201. The first exhaust pipe 201 is provided with a pump 211 and a regulator 212 for adjusting the opening of the first exhaust pipe 201. The second common exhaust pipe 200 is connected to the first exhaust pipe 201 arranged on each floor.

[0137] One end of the second exhaust pipe 202 is connected to the buffer 223, and the other end is connected to the first exhaust pipe 201. A pump 221 and a regulator 222 for adjusting the opening of the second exhaust pipe 202 are provided in the second exhaust pipe 202. Furthermore, an opening 822 is provided on the surface of the housing 821 facing the conveying block 4.

[0138] Air (clean air) within the transport block 4 flows into the housing 821 through the opening 822. The air flowing into the housing 821 flows through the first exhaust pipe 201 or the second exhaust pipe 202 to the second common exhaust pipe 200, and is exhausted from the second common exhaust pipe 200 to the outside of the processing block 5. Furthermore, the operation of transporting wafers W into and out of the housing 821 by the transport device 16 is also performed through the opening 822.

[0139] As described above, the substrate processing system 1 of the embodiment includes: a first exhaust path for high pressure (a first common exhaust pipe 100 and an independent exhaust pipe 102), which discharges a processing fluid in a supercritical state from the processing area 181; and a second exhaust path for normal pressure (a second common exhaust pipe 200, a first exhaust pipe 201 and a second exhaust pipe 202) for exhausting the interface area 182.

[0140] An opening 521 is provided on the surface of the drying block 52 on the conveying block 4 side. The opening 521 is connected to the third exhaust pipe 203. One end of the third exhaust pipe 203 is connected to the opening 521, and the other end is connected to the first exhaust pipe 201. A regulator 232 is provided in the third exhaust pipe 203 for adjusting the opening of the third exhaust pipe 203.

[0141] The opening 521 , the third exhaust pipe 203 and the regulator 232 are provided to suppress turbulence of the air flow conveying the block 4 , for example, when maintaining the drying assembly 18 .

[0142] For this, refer to Figure 10A and Figure 10B Provide explanation. Figure 10A and Figure 10B 1 is a schematic cross-sectional view of the substrate processing system 1 according to the embodiment as viewed from the rear.

[0143] like Figure 10A As shown, an FFU 401 is disposed above the transport area 15 in the transport block 4. A fan 402 is disposed below the transport area 15. The FFU 401 and the fan 402 form a downward flow in the transport area 15.

[0144] Each drying block 52 is provided with a shutter 823 capable of closing / opening the opening 822 and a shutter 522 capable of closing / opening the opening 521 .

[0145] During a normal state in which a series of substrate processing is being performed, the control unit 61 of the substrate processing system 1 executes the series of substrate processing with the shutter 823 open and the shutter 522 closed. Therefore, during a normal state, air (clean air) within the transport area 15 of the transport block 4 flows into the housing 821 through the opening 822. The air flowing into the housing 821 is exhausted to the outside through the first exhaust pipe 201 and the second common exhaust pipe 200.

[0146] On the other hand, Figure 10B As shown, when any drying block 52 is transferred to the maintenance state, the control unit 61 closes the shutter 823 of the drying block 52 in the maintenance state and opens the shutter 522. As a result, the air in the conveying area 15 flows into the third exhaust pipe 203 through the opening 521. At this time, the control unit 61 adjusts the regulator 232 (see Figure 9 ), so that the same flow rate of air as that of the air flowing into the housing 821 in the normal state flows into the third exhaust pipe 203. The air flowing into the third exhaust pipe 203 is discharged to the outside through the first exhaust pipe 201 and the second common exhaust pipe 200.

[0147] The maintenance state refers to a state in which processing in the drying block 52 is temporarily stopped, for example, for cleaning or inspection of the drying block 52 or due to an abnormality occurring in the drying block 52 .

[0148] As described above, in the maintenance state with the shutter 823 of the opening 822 closed, air within the transfer area 15 is drawn in through the opening 521 instead of through the opening 822, thereby maintaining a constant balance between the supply and exhaust of gas within the transfer area 15. Consequently, even when the drying block 52 is in the maintenance state, airflow disturbances within the transfer area 15 are less likely to occur. Consequently, for example, unevenness in the amount of liquid film dried on wafers W after liquid film formation processing due to airflow disturbances can be suppressed.

[0149] As described above, the substrate processing system 1 (an example of a substrate processing device) of the embodiment includes a transport block 4 and a plurality of processing blocks 5. The transport block 4 is provided with a transport device 16 for transporting a wafer W (an example of a substrate). The plurality of processing blocks 5 are arranged adjacent to the transport block 4 to process the wafer W transported by the transport device 16. In addition, each processing block 5 includes a liquid processing component 17 and a drying component 18. The liquid processing component 17 performs a liquid film forming process for forming a liquid film on the upper surface of the wafer W. The drying component 18 performs a supercritical drying process for drying the wafer W after the liquid film forming process by bringing the wafer W after the liquid film forming process into contact with a processing fluid in a supercritical state. Moreover, the liquid processing component 17 and the drying component 18 contained in the same processing block 5 are arranged on the same side relative to the moving direction of the transport device 16 of the transport block 4.

[0150] Therefore, according to the substrate processing system 1 of the embodiment, a series of substrate processing including the liquid film forming process and the supercritical drying process can be optimized.

[0151] Further effects and modifications can be readily derived by those skilled in the art. Therefore, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Therefore, various changes can be made without departing from the spirit or scope of the general inventive concept as defined by the scope of the appended claims and their equivalents.

Claims

1. A substrate processing device, characterized in that: include: a transport block provided with a transport device for transporting substrates; and a plurality of processing blocks disposed adjacent to the transport block for processing substrates transported by the transport device; Each processing block contains a liquid processing component and a drying component. The liquid processing component performs a liquid film forming process to form a liquid film on the upper surface of the substrate. The drying assembly performs a supercritical drying process, wherein the supercritical drying process dries the substrate after the liquid film forming process by bringing the substrate into contact with a processing fluid in a supercritical state. The liquid processing assembly and the drying assembly included in the same processing block are arranged on the same side relative to the moving direction of the transport device of the transport block. The drying assembly comprises: a treatment area in which the supercritical drying treatment is performed; and an interface area for interfacing the substrate between the transport block and the processing area, The processing area and the handover area are arranged along the transport block, The substrate processing device comprises: a first high-pressure exhaust path for exhausting the supercritical process fluid from the process region; and A second exhaust path for exhausting the transfer area at normal pressure.

2. The substrate processing device according to claim 1, wherein: The transport device transports the substrate after the liquid film formation process between the liquid processing assembly and the drying assembly included in the same processing block.

3. The substrate processing device according to claim 1 or 2, wherein: The multiple processing blocks are arranged in multiple layers.

4. The substrate processing device according to claim 3, wherein: It also includes a transfer portion, which is adjacent to the transport block and is used to carry the substrate. The transport device transports the substrate between the processing blocks arranged at each layer and the interface.

5. The substrate processing device according to any one of claims 1, 2, and 4, characterized in that: The plurality of processing blocks are arranged on both sides of the moving direction of the transport block, The processing block disposed on one side of the transport block and the processing block disposed on the other side of the transport block are symmetrically disposed across the transport block in a plan view.

6. The substrate processing device according to claim 1, wherein: The interface region is disposed on a side closer to the liquid processing assembly than the processing region.

7. The substrate processing device according to any one of claims 1, 2, 4, and 6, wherein: Each of the processing blocks further comprises a supply component for supplying the processing fluid to the drying component. The liquid processing assembly, the drying assembly, and the supply assembly included in the same processing block are arranged on the same side with respect to the moving direction of the transport device of the transport block.

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