Image sensor and method for manufacturing the same

Abstract

An image sensor and a manufacturing method thereof are provided. The image sensor includes: a substrate including a photoelectric element; a first color filter disposed on the substrate; a second color filter disposed on the substrate and adjacent to the first color filter; a cover film disposed between side walls of the first color filter and the second color filter; and an air gap formed in the cover film.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2017-0154737, filed on November 20, 2017, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to an image sensor and a method for manufacturing the same. Background Art

[0004] An image sensor is a device that converts an optical image into an electrical signal. Image sensors can be divided into a charge coupled device (CCD) type and a complementary metal oxide semiconductor (CMOS) type. A CMOS image sensor (abbreviated as CIS) includes a plurality of pixels arranged in two dimensions. Each pixel includes a photodiode (PD). The PD converts incident light into an electrical signal.

[0005] With the recent development of computer industry and communication industry, the demand for image sensors with improved performance has increased in various fields such as digital cameras, video cameras, personal communication systems (PCS), game devices, surveillance cameras, medical micro cameras and robotics. In addition, as semiconductor devices become more integrated, the integration of image sensors is also higher. Summary of the invention

[0006] Some example embodiments of the present disclosure provide an image sensor with improved picture quality.

[0007] Some example embodiments of the present disclosure also provide a method of manufacturing an image sensor with improved picture quality.

[0008] However, exemplary embodiments of the present disclosure are not limited to those set forth herein. The above and other exemplary embodiments of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0009] According to an example embodiment of the present disclosure, there is provided an image sensor, comprising: a substrate including a photoelectric element; a first color filter on the substrate; a second color filter adjacent to the first color filter on the substrate; a covering film between side walls of the first color filter and the second color filter; and an air gap in the covering film.

[0010] According to an example embodiment of the present disclosure, there is provided an image sensor, comprising: a substrate comprising a photoelectric element; a color filter disposed on the substrate and having a first sidewall, a second sidewall intersecting the first sidewall, a third sidewall opposite to the first sidewall, and a fourth sidewall opposite to the second sidewall; a covering film disposed on the first sidewall, the second sidewall, the third sidewall, and the fourth sidewall, wherein a first air gap, a second air gap, a third air gap, and a fourth air gap are formed in the covering film and are disposed along the first sidewall, the second sidewall, the third sidewall, and the fourth sidewall, respectively.

[0011] According to an example embodiment of the present disclosure, there is provided an image sensor, comprising: a substrate including a photoelectric element; a first color filter disposed on the substrate and including a first sidewall; a second color filter disposed on the substrate and including a second sidewall opposite to the first sidewall; a covering film disposed between the first sidewall and the second sidewall; and air formed in the covering film.

[0012] Other features and exemplary embodiments may become apparent from the following detailed description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The above and other exemplary embodiments and features of the present disclosure will become more apparent by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0014] Figure 1 is a block diagram of an image sensor according to some example embodiments of the present disclosure.

[0015] Figure 2 yes Figure 1 Equivalent circuit diagram of the sensor array shown in .

[0016] Figure 3 is a layout diagram illustrating an image sensor according to some example embodiments of the present disclosure.

[0017] Figure 4 is along Figure 3 Schematic cross-sectional view taken along line AA'.

[0018] Figure 5a to Figure 5e yes Figure 4 An example magnified view of region R1.

[0019] Figure 6 is a cross-sectional view of an image sensor according to some example embodiments of the present disclosure.

[0020] Figure 7 is a layout diagram of an image sensor according to some example embodiments of the present disclosure.

[0021] Figure 8 yes Figure 7 Magnified view of region R2.

[0022] Fig. 9 is a layout diagram of an image sensor according to some example embodiments of the present disclosure.

[0023] Fig.10 is a layout diagram of an image sensor according to some example embodiments of the present disclosure.

[0024] Fig.11 is a layout diagram of an image sensor according to some example embodiments of the present disclosure.

[0025] Figures 12 to 19 is a cross-sectional view illustrating a method of manufacturing an image sensor according to some example embodiments of the present disclosure.

[0026] Fig. 20 and Fig.21 is a cross-sectional view illustrating a method of manufacturing an image sensor according to some example embodiments of the present disclosure. DETAILED DESCRIPTION

[0027] The following will refer to Figure 1 to Figure 5e Image sensors according to some example embodiments of the present disclosure are described.

[0028] Figure 1 is a block diagram of an image sensor according to some example embodiments of the present disclosure. Figure 2 yes Figure 1 Equivalent circuit diagram of the sensor array shown in . Figure 3 is a layout diagram illustrating an image sensor according to some example embodiments of the present disclosure. Figure 4 is along Figure 3 Schematic cross-sectional view taken along line AA'.

[0029] refer to Figure 1 According to some example embodiments of the present disclosure, an image sensor may include: a sensor array 1, a timing generator 2, a row decoder 3, a row driver 4, a correlated double sampler (CDS) 5, an analog-to-digital converter (ADC) 6, a latch 7 and / or a column decoder 8.

[0030] The sensor array 1 may include a plurality of pixels arranged in two dimensions (2D), each pixel having a photoelectric element. That is, the sensor array 1 may include a plurality of unit pixels arranged in two dimensions. Each unit pixel converts an optical image into an electrical output signal. The sensor array 1 is driven by receiving a plurality of drive signals (e.g., a row selection signal, a reset signal, and a charge transfer signal) from a row driver 4. The electrical output signal of the sensor array 1 is provided to a CDS 5.

[0031] The timing generator 2 provides a timing signal and a control signal to the row decoder 3 and the column decoder 8 .

[0032] The row driver 4 provides a plurality of driving signals for driving unit pixels to the sensor array 1 according to the decoding result performed by the row decoder 3. In the case where the unit pixels are arranged in a matrix of rows and columns, the row driver 4 provides a driving signal to each row of the matrix.

[0033] The CDS 5 receives the output signal of the sensor array 1 via the vertical signal line, stores the received signal, and samples the received signal. That is, the CDS 5 double samples the specific noise level and the signal level corresponding to the output signal of the sensor array 1, and outputs the difference between the specific noise level and the signal level.

[0034] The ADC 6 converts an analog signal corresponding to the difference between a specific noise level and a signal level into a digital signal and outputs the digital signal.

[0035] The latch 7 latches the digital signal and sequentially outputs the latched signal to the image signal processing module according to the decoding result performed by the column decoder 8 .

[0036] refer to Figure 2 , the unit pixels P are arranged in a matrix form to form a sensor array 1. Each pixel P may include a phototransistor 11, a floating diffusion region 13, a charge transfer transistor 15, a drive transistor 17, a reset transistor 18 and / or a selection transistor 19. The functions of the phototransistor 11, the floating diffusion region 13, the charge transfer transistor 15, the drive transistor 17, the reset transistor 18 and the selection transistor 19 will be described below by taking the pixels P of the i-th row (e.g., P(i, j), P(i, j+1), P(i, j+2), P(i, j+3)...) as an example.

[0037] The phototransistor 11 absorbs incident light and accumulates charges corresponding to the amount of absorbed light. A photodiode (PD), a phototransistor, a photogate, a clamped PD (PPD), or a combination thereof may be used as the phototransistor 11. The phototransistor 11 is Figure 2 Shown as PD.

[0038] The phototransistor 11 is coupled to a charge transfer transistor 15, which transfers charges accumulated in the phototransistor 11 to the floating diffusion region 13. Since the floating diffusion region 13, which converts charges into voltage, has parasitic capacitance, the floating diffusion region 13 can accumulatively store charges therein.

[0039] The driving transistor 17 , which is an example of a follower amplifier, amplifies a change in the potential of the floating diffusion 13 that receives the charge accumulated in the phototransistor 11 , and outputs the amplified result to the output line Vout.

[0040] The reset transistor 18 periodically resets the floating diffusion region 13. The reset transistor 18 may include a MOS transistor driven by a reset line RX(i) that applies a predetermined (or alternatively, desired) bias (e.g., a reset signal). In response to the reset transistor 18 being turned on due to the bias provided by the reset line RX(i), a predetermined (or alternatively, desired) potential, such as the power supply voltage VDD, provided to the drain of the reset transistor 18 is transmitted to the floating diffusion region 13.

[0041] The selection transistor 19 selects a row of unit pixels P to be read. The selection transistor 19 may include a single MOS transistor driven by a row selection line SEL(i) that applies a predetermined (or alternatively, desired) bias (e.g., a row selection signal). In response to the selection transistor 19 being turned on due to the bias provided by the row selection line SEL(i), a predetermined (or alternatively, desired) potential, such as the power supply voltage VDD, supplied to the drain of the selection transistor 19 is transmitted to the drain of the drive transistor 17.

[0042] A transmission line TX(i) biasing the charge transfer transistor 15, a reset line RX(i) biasing the reset transistor 18, and a row selection line SEL(i) biasing the selection transistor 19 may extend substantially parallel to each other along a row direction.

[0043] refer to Figure 3 and Figure 4 According to some example embodiments of the present disclosure, the image sensor may include a substrate 10, an isolation film 20, an insulating structure 30, a lower planarization film 120, a first color filter 130, a second color filter 230, a third color filter 330 and a fourth color filter 430, a covering film 140, an air gap AG, an upper planarization film 150, a microlens 160 and / or a protective film 170.

[0044] Figure 4 Shows Figure 2 The structure around the phototransistor 11. Figure 2 The phototransistor 11 may correspond to the first photoelectric element 110 and the second photoelectric element 210 . Figure 3 It is used to illustrate Figure 4 For convenience, the air gap AG is not shown in the figure. Figure 4 Shown in Figure 3 The covering film 140 is provided.

[0045] The substrate 10 includes a first surface 10a and a second surface 10b facing each other. For example, the first surface 10a of the substrate 10 may be the front surface of the substrate 10, and the second surface 10b of the substrate 10 may be the back surface of the substrate 10. However, the present disclosure is not limited to this example.

[0046] The substrate 10 may be, for example, a P-type or N-type bulk substrate, a P-type bulk substrate on which a P-type or N-type epitaxial layer is grown, or an N-type bulk substrate on which a P-type or N-type epitaxial layer is grown. Examples of the substrate 10 may include not only semiconductor substrates but also non-semiconductor substrates such as organic plastic substrates.

[0047] The substrate 10 may include a first photoelectric element 110 and a second photoelectric element 210. The first photoelectric element 110 and the second photoelectric element 210 may correspond to Figure 2 For example, a PD, a phototransistor, a photogate, a PPD, or a combination thereof may be used as the first photoelectric element 110 or the second photoelectric element 210.

[0048] The first photoelectric element 110 and the second photoelectric element 210 may be photoelectric elements disposed adjacent to each other inside the substrate 10. Figure 3 and Figure 4 As shown, the first optoelectronic element 110 and the second optoelectronic element 210 may be adjacent to each other in the first direction X.

[0049] The isolation film 20 may be formed in the substrate 10. The isolation film 20 may define a sensing region of the image sensor according to some example embodiments of the present disclosure in the substrate 10. The planar cross-sectional shape of the isolation film 20 may be a ring-shaped closed curve. Therefore, the space surrounded by the isolation film 20 may be defined to define a sensing region of the image sensor according to some example embodiments of the present disclosure.

[0050] like Figure 4 As shown, the isolation film 20 may be tapered. For example, the width of the isolation film 20 may gradually decrease from the first surface 10a to the second surface 10b, but the present disclosure is not limited thereto. That is, the shape of the isolation film 20 may vary.

[0051] Figure 4 An example in which the isolation film 20 extends from the first surface 10a to the second surface 10b is shown, but the present disclosure is not limited to this example. That is, in another example, the isolation film 20 may extend from the first surface 10a along the third direction Z, but may not reach the second surface 10b. In yet another example, the isolation film 20 may extend from the second surface 10b, but may not reach the first surface 10a.

[0052] The isolation film 20 may include, for example, at least one of silicon oxide, silicon nitride, silicon oxynitride, and a low dielectric constant material having a dielectric constant lower than that of silicon oxide. The low dielectric constant material may be, for example, flowable oxide (FOX), doline silazane (TOSZ), undoped silica glass (USG), borosilicate glass (BSG), phosphorescent glass (PSG), borophosphosilicate glass (BPSG), plasma enhanced tetraethyl orthosilicate (PETEOS), fluorinated silicate glass (FSG), carbon-doped silicon oxide (CDO), xerogel, aerogel, amorphous fluorinated carbon, organosilicate glass (OSG), polyparaxylene, bisbenzocyclobutene (BCB), SiLK, polyimide, porous polymer material, or a combination thereof, but the present disclosure is not limited thereto.

[0053] The lower planarization film 120 may be formed on the substrate 10. For example, the lower planarization film 120 may be formed on the second surface 10b of the substrate 10. That is, the insulation structure 30 may be formed on the back side of the substrate 10. The lower planarization film 120 is shown as a single layer, but the present disclosure is not limited thereto.

[0054] The lower planarization film 120 may serve as a buffer film for reducing or preventing the substrate 10 from being damaged during patterning for forming a pad (not shown) in a non-pixel region.

[0055] The lower planarization film 120 may include, for example, at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof. to A silicon oxide film of 1000 Å is used as the lower planarizing film 120 .

[0056] The first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 may be formed on the lower planarization film 120. Therefore, the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 may be formed on the second surface 10b of the substrate 10. Figure 4 An example is shown in which the first color filter 130 and the second color filter 230 overlap the first photoelectric element 110 and the second photoelectric element 210, respectively, but the present disclosure is not limited to this example. That is, in another example, the first color filter 130 may be formed to overlap both the first photoelectric element 110 and the second photoelectric element 210, in which case the first photoelectric element 110 and the second photoelectric element 210 may share a single color filter together.

[0057] like Figure 3As shown in , the first color filter 130, the second color filter 230, the third color filter 330 and the fourth color filter 430 may be arranged in two dimensions. For example, the second color filter 230 may be arranged adjacent to the first color filter 130 in the first direction X, the third color filter 330 may be arranged adjacent to the first color filter 130 in the second direction Y, and the fourth color filter 430 may be arranged adjacent to the second color filter 230 in the second direction Y and may be arranged adjacent to the third color filter 330 in the first direction X.

[0058] Each of the first color filter 130 , the second color filter 230 , the third color filter 330 , and the fourth color filter 430 may include one of red, green, and blue filters. Figure 3 An example is shown in which the first color filter 130 and the fourth color filter 430 are green filters, the second color filter 230 is a red filter, and the third color filter 330 is a blue filter, but the present disclosure is not limited to this example. That is, the arrangement of the red, green, and blue filters may vary according to the type of the unit pixel P. In another example, each of the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 may include a yellow filter, a magenta filter, a cyan filter, or a white filter.

[0059] A space may be formed between the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 to form a cover film 140 and an air gap AG, which will be described later. Figure 4 As shown, the first color filter 130 and the second color filter 230 may be spaced apart from each other such that a space may be formed therebetween.

[0060] However, in some example embodiments, Figure 4 As shown, the first color filter 130, the second color filter 230, the third color filter 330 and the fourth color filter 430 may be placed in contact with each other. For example, the lower portions of the first color filter 130 and the second color filter 230 may be placed in contact with each other so that a space may be formed between the first color filter 130 and the second color filter 230.

[0061] In some example embodiments, the top surfaces of the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 may have a rectangular shape. Figure 3As shown in , the first color filter 130 may have a first side wall SW1, a second side wall SW2 intersecting the first side wall SW1, a third side wall SW3 opposite to the first side wall SW1, and a fourth side wall SW4 opposite to the second side wall SW2. For example, the first side wall SW1 and the third side wall SW3 may extend along the second direction Y, and the second side wall SW2 and the fourth side wall SW4 may extend along the first direction X.

[0062] Similarly, the second color filter 230 may have a fifth sidewall SW5 opposite to the first sidewall SW1 and a sixth sidewall SW6 intersecting the fifth sidewall SW5. For example, the fifth sidewall SW5 may extend along the second direction Y, and the sixth sidewall SW6 may extend along the first direction X.

[0063] Similarly, the third color filter 330 may have a seventh sidewall SW7 opposite to the second sidewall SW2 and an eighth sidewall SW8 intersecting the seventh sidewall SW7. For example, the seventh sidewall SW7 may extend along the first direction X, and the eighth sidewall SW8 may extend along the second direction Y.

[0064] The cover film 140 may be formed between the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430. For example, Figure 4 As shown in FIG. 1 , the cover film 140 may be formed between opposite side walls of the first color filter 130 and the second color filter 230 .

[0065] The cover film 140 may include a material with poor step coverage. Therefore, an air gap AG may be formed in the cover film 140 between opposite side walls of the first color filter 130 and the second color filter 230. This will be referred to as Fig.18 This is described below.

[0066] In some example embodiments, the cover film 140 may include a low temperature oxide (LTO), which is a silicon oxide film. Since the LTO is manufactured at a low temperature of about 100° C. to 120° C., damage to the film below the LTO can be reduced or prevented. Moreover, since the LTO is amorphous and thus has a smooth surface, reflection, refraction, and / or diffusion of incident light can be reduced or minimized. For example, the cover film 140 may include phenyltriethoxysilane (PTEOS).

[0067] In some example embodiments, the cover film 140 may include a material having a lower refractive index. For example, the cover film 140 may include a material having a lower refractive index than the first color filter 130 , the second color filter 230 , the third color filter 330 , and the fourth color filter 430 .

[0068] The air gap AG may be formed in the cover film 140 between the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430. For example, Figure 4 As shown in FIG. 1 , an air gap AG may be formed in the cover film 140 between opposite sidewalls of the first color filter 130 and the second color filter 230. That is, the air gap AG may be defined by the cover film 140. The air gap AG may be a void formed in the cover film 140.

[0069] Figure 4 An example is shown in which one air gap AG is formed in the cover film 140 between the opposite side walls of the first color filter 130 and the second color filter 230, but the present disclosure is not limited to this example. That is, in another example, two or more air gaps AG may be formed in the cover film 140 between the opposite side walls of the first color filter 130 and the second color filter 230, wherein the first color filter 130 and the second color filter 230 are separated from each other by the cover film 140.

[0070] In some example embodiments, the air gap AG may surround the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430. For example, the cover film 140 may be formed on the first side wall SW1, the second side wall SW2, the third side wall SW3, and the fourth side wall SW4 of the first color filter 130. Since the air gap AG is formed in the cover film 140, the air gap AG may include the first air gap AG1, the second air gap AG2, the third air gap AG3, and the fourth air gap AG4 surrounding the first color filter 130. The first air gap AG1 may be formed on the first side wall SW1 of the first color filter 130, the second air gap AG2 may be formed on the second side wall SW2 of the first color filter 130, the third air gap AG3 may be formed on the third side wall SW3 of the first color filter 130, and the fourth air gap AG4 may be formed on the fourth side wall SW4 of the first color filter 130.

[0071] In some exemplary embodiments, the first air gap AG1, the second air gap AG2, the third air gap AG3, and the fourth air gap AG4 may be connected to each other and thus may be the same air gap. Therefore, the air gap AG may surround all or part of the first side wall SW1, the second side wall SW2, the third side wall SW3, and the fourth side wall SW4 of the first color filter 130.

[0072] The air gap AG can reduce or prevent light incident on the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 from being reflected or diffused laterally. For example, the air gap AG can reduce or prevent light incident on the first color filter 130 and then reflected or diffused at the interface between the first color filter 130 and the lower planarization film 120 from penetrating into other unit pixels P. That is, the air gap AG can reduce or minimize crosstalk between the unit pixels P. Since the refractive index of the air gap AG is lower than the refractive index of the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 and the refractive index of the cover film 140, the air gap AG can reduce or minimize the crosstalk between the unit pixels P by causing total reflection. Therefore, the image sensor according to some example embodiments of the present disclosure can provide improved picture quality. Although in example embodiments, total reflection is caused by the cover film 140 with or without the air gap AG, total reflection may be caused by other materials having a lower refractive index than the first, second, third, and fourth color filters 130, 230, 330, and 430. In addition, although in example embodiments, total reflection is caused by materials having a lower refractive index than the first, second, third, and fourth color filters 130, 230, 330, and 430 and / or an air gap, total reflection may be caused by other techniques.

[0073] The upper planarization film 150 may be formed on the capping film 140. The upper planarization film 150 may include, for example, at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof. The upper planarization film 150 is shown as a single layer, but the present disclosure is not limited thereto.

[0074] Figure 4 An example is shown in which the upper planarization film 150 and the lower planarization film 120 are formed above and below the first color filter 130 or the second color filter 230, respectively, but the present disclosure is not limited to this example. In another example, the planarization film may be provided only below the first color filter 130 and the second color filter 230 or only above the first color filter 130 and the second color filter 230. In yet another example, the planarization film may not exist above and below the first color filter 130 and the second color filter 230.

[0075] The microlens 160 may be formed on the upper planarization film 150. The microlens 160 may be convex and may have a predetermined (or alternatively, desired) radius of curvature. Thus, the microlens 160 may focus incident light into the first photoelectric element 110 and the second photoelectric element 210.

[0076] The microlens 160 may include, for example, an organic material such as a light-transmitting resin, but the present disclosure is not limited thereto. That is, alternatively, the microlens 160 may include an inorganic material.

[0077] The protective film 170 may be formed along the surface of the microlens 160. The protective film 170 may include, for example, an inorganic oxide film. For example, the protective film 170 may include a silicon oxide (SiO2) film, a titanium oxide (TiO2) film, a zirconium oxide (ZrO2) film, a hafnium oxide (HfO2) film, or a stack or combination thereof.

[0078] In the case where the microlens 160 includes an organic material, the microlens 160 may be susceptible to external influences. The protective film 170 may protect the microlens 160 from external influences.

[0079] Spaces may be formed between the microlenses 160. The protective film 170 may fill the spaces between the microlenses 160. In the case where the protective film 170 fills the spaces between the microlenses 160, convergence of incident light may be improved because reflection, refraction, or diffusion of incident light reaching the spaces between the microlenses 160 may be reduced.

[0080] The insulating structure 30 may be formed under the substrate 10. For example, the insulating structure 30 may be formed on the first surface 10a of the substrate 10. That is, the insulating structure 30 may be formed on the front surface of the substrate 10, but the present disclosure is not limited thereto. That is, in another example, the insulating structure 30 may be formed on the second surface 10b of the substrate 10.

[0081] The insulating structure 30 may include a gate structure 32 , an insulating layer 34 and / or a wiring structure 36 .

[0082] The gate structure 32 may be formed on the first surface 10a of the substrate 10. The gate structure 32 may correspond to, for example, Figure 2 The gates of the charge transfer transistor 15, the drive transistor 17, the reset transistor 18 and / or the select transistor 19.

[0083] Figure 4 An example in which the gate structure 32 is formed on the substrate 10 is shown, but the present disclosure is not limited to this example. That is, in another example, the gate structure 32 may be recessed in the substrate 10 or may be buried in the substrate 10.

[0084] The insulating layer 34 may include, for example, at least one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a low dielectric constant material, and a combination thereof. The insulating layer 34 may cover and surround the gate structure 32 and the wiring structure 36. That is, the insulating layer 34 may electrically insulate the gate structures 32 from each other, and may electrically insulate the wiring structures 36 from each other.

[0085] The wiring structure 36 may include a conductive material. For example, the wiring structure 36 may include Al, Cu, tungsten (W), cobalt (Co), or ruthenium (Ru).

[0086] The wiring structure 36 may include a stack of multiple wirings. Figure 4 An example in which the wiring structure 36 includes a three-layer stack is shown, but the present disclosure is not limited to this example.

[0087] Since the wiring structure 36 is disposed on the first surface 10a of the substrate 10, the amount of incident light transmitted through the second surface 10b can be further increased. In addition, since the wiring structure 36 is disposed on the first surface 10a of the substrate 10, the focusing efficiency of the image sensor according to some example embodiments of the present disclosure can be maximized, because the incident light can be reflected by the wiring structure 36 and thus can travel toward the first photoelectric element 110 or the second photoelectric element 210.

[0088] Figure 5a to Figure 5e yes Figure 4 An example magnified view of region R1.

[0089] refer to Figure 5a , the cover film 140 may include a first portion 143 extending along a sidewall of the first color filter 130 and a second portion 144 extending along a sidewall of the second color filter 230. An upper portion of the first portion 143 may be connected to an upper portion of the second portion 144, and a lower portion of the first portion 143 may be connected to a lower portion of the second portion 144. Therefore, an air gap AG defined by the first portion 143 and the second portion 144 may be formed in the cover film 140. The air gap AG may be a void formed in the cover film 140.

[0090] In some example embodiments, the thickness TH1 of the first portion 143 may gradually decrease and then gradually increase as it moves away from the substrate 10. Similarly, the thickness of the second portion 144 may gradually decrease and then gradually increase as it moves away from the substrate 10. As a result, the width of the air gap AG may gradually increase and then gradually decrease as it moves away from the substrate 10. The air gap AG may have an elliptical cross-sectional shape, but the present disclosure is not limited thereto. The cross-sectional shape of the air gap AG may vary according to, for example, the characteristics of the deposition process used to form the cover film 140. For example, the thickness TH1 of the first portion 143 and the thickness of the second portion 144 may vary as they move away from the substrate 10 in almost the same manner.

[0091] In some example embodiments, the cover film 140 may cover the top surfaces of the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430. For example, the cover film 140 may include a third portion 141 extending along the top surface of the first color filter 130 and a fourth portion 142 extending along the top surface of the second color filter 230.

[0092] In some example embodiments, the thickness TH1 of the first portion 143 may be smaller than the thickness TH2 of the third portion 141. For example, the thickness TH2 of the third portion 141 may be about 200 nm to 400 nm, and the thickness TH1 of the first portion 143 may be smaller than the thickness TH2 of the third portion 141.

[0093] refer to Figure 5b , the air gap AG may include a first sub-air gap SAG1 and a second sub-air gap SAG2. The first sub-air gap SAG1 and the second sub-air gap SAG2 may be adjacent to each other, such as Figure 5b as shown, or separated as described below.

[0094] The first sub air gap SAG1 may be a portion of the air gap AG whose width gradually increases away from the substrate 10, and the second sub air gap SAG2 may be a portion of the air gap AG whose width gradually decreases away from the substrate 10. The second sub air gap SAG2 may be on the first sub air gap SAG1.

[0095] In some example embodiments, a first height H1 of the first sub air gap SAG1 may be smaller than a second height H2 of the second sub air gap SAG2. The first height H1 may be defined as a distance from a lowermost portion to an uppermost portion of the first sub air gap SAG1. For example, the first sub air gap SAG1 and the second sub air gap SAG2 may form an air gap AG having a water drop-shaped cross-sectional shape.

[0096] refer to Figure 5c , air gap AG and Figure 5b The corresponding parts of are substantially the same, except that the first height H1 of the first sub-air gap SAG1 is greater than the second height H2 of the second sub-air gap SAG2. Figure 5c , the first sub air gap SAG1 and the second sub air gap SAG2 may form an air gap AG having an inverted water drop-like cross-sectional shape.

[0097] refer to Figure 5d , the air gap AG may be formed adjacent to the top surface of the cover film 140. For example, a third height H3 from the bottom surface of the cover film 140 to the lowermost portion of the air gap AG may be greater than a fourth height H4 from the uppermost portion of the air gap AG to the top surface of the cover film 140.

[0098] The air gap AG may have an elliptical cross-sectional shape, but the present disclosure is not limited thereto. For example, the cross-sectional shape of the air gap AG may vary according to, for example, characteristics of a deposition process used to form the capping film 140 .

[0099] Figure 5a to Figure 5d An example is shown in which only one air gap AG is formed in the cover film 140 between the opposite side walls of the first color filter 130 and the second color filter 230, but the present disclosure is not limited to this example. Also in another example, two or more air gaps AG may be formed in the cover film 140 between the opposite side walls of the first color filter 130 and the second color filter 230, wherein the first color filter 130 and the second color filter 230 are separated from each other by the cover film 140.

[0100] refer to Figure 5e , air gap AG and Figure 5d The corresponding portions of the cover film 140 are substantially the same except that the air gap AG is formed adjacent to the bottom surface of the cover film 140. For example, a third height H3 from the bottom surface of the cover film 140 to the lowermost portion of the air gap AG may be smaller than a fourth height H4 from the uppermost portion of the air gap AG to the top surface of the cover film 140.

[0101] Figure 6 is a cross-sectional view of an image sensor according to some example embodiments of the present disclosure. Figure 1 to Figure 5e any redundant description of example embodiments.

[0102] refer to Figure 6 , the image sensor according to some example embodiments of the present disclosure further includes a grid pattern 180 .

[0103] The grid pattern 180 may be formed on the lower planarization film 120. The grid pattern 180 may partially cover the lower planarization film 120. The grid pattern 180 may overlap the isolation film 20 in the third direction Z.

[0104] The grid pattern 180 may be formed between the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430. For example, the grid pattern 180 may be formed between the first color filter 130 and the second color filter 230. The height of the top surface of the grid pattern 180 may be less than the height of the top surface of the first color filter 130 and / or the second color filter 230. Since the cover film 140 is formed along the sidewall of the first color filter 130 and along the sidewall of the second color filter 230, the grid pattern 180 may be disposed below the cover film 140.

[0105] Figure 6An example is shown in which the first color filter 130 and the second color filter 230 cover the sidewalls of the grid pattern 180, but the present disclosure is not limited to this example. That is, in another example, the first color filter 130 and / or the second color filter 230 may cover not only the sidewalls of the grid pattern 180 but also a portion of the top surface of the grid pattern 180.

[0106] The grid pattern 180 can reduce or prevent light incident on the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 from being reflected or laterally diffused. For example, the grid pattern 180 can reduce or prevent light incident on the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 and then reflected or diffused at the interface between the lower planarization film 120 and the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 from penetrating into other unit pixels P.

[0107] Like the air gap AG, the grid pattern 180 can reduce or prevent light incident on the first color filter 130, the second color filter 230, the third color filter 330, and the fourth color filter 430 from being reflected or laterally diffused. For example, like the air gap AG, light incident on the first color filter 130 and then reflected or diffused at the interface between the first color filter 130 and the lower planarization film 120 can be reduced or prevented from penetrating into other unit pixels P. That is, the grid pattern 180 can reduce or prevent crosstalk between the unit pixels P.

[0108] The grid pattern 180 may include a metal. For example, the grid pattern 180 may include at least one of W, Al, Cu, and a combination thereof.

[0109] Figure 7 is a layout diagram of an image sensor according to some example embodiments of the present disclosure. Figure 8 yes Figure 7 For convenience, the enlarged view of the region R2 will be omitted. Figure 1 to Figure 5e any redundant description of example embodiments.

[0110] refer to Figure 7 and Figure 8 Each of the first color filter 130 , the second color filter 230 , the third color filter 330 , and the fourth color filter 430 includes a protruding portion. For example, the first color filter 130 may include a first central portion 132 and a first protruding portion 134 .

[0111] The first central portion 132 of the first color filter 130 may be a portion where the top surface of the first color filter 130 is rectangular. For example, the first central portion 132 of the first color filter 130 may be Figure 2The first color filter 130 has the same shape. The first central portion 132 of the first color filter 130 may have a first side wall SW1, a second side wall SW2, a third side wall SW3, and a fourth side wall SW4. That is, the first central portion 132 may be a portion of the first color filter 130 defined by the first side wall SW1, the second side wall SW2, the third side wall SW3, and the fourth side wall SW4.

[0112] The first protruding portion 134 of the first color filter 130 may be a portion of the first color filter 130 that protrudes from the side of the first central portion 132. The first protruding portion 134 of the first color filter 130 may be disposed at a corner of the first central portion 132. For example, Figure 8 As shown in FIG, one of the first protrusions 134 of the first color filter 130 may protrude from portions of the first side wall SW1 and the second side wall SW2, and may be disposed at a corner of the first central portion 132. That is, one of the first protrusions 134 of the first color filter 130 may protrude from a corner of the first central portion 132 defined by the first side wall SW1 and the second side wall SW2.

[0113] Figure 7 An example is shown in which the first protruding portion 134 of the first color filter 130 is formed at all corners of the first central portion 132, but the present disclosure is not limited to this example. That is, in another example, the first protruding portion 134 of the first color filter 130 may be formed only at some corners of the first central portion 132.

[0114] Similarly, the second color filter 230 may include a second central portion 232 and a second protruding portion 234. For example, the second color filter 230 may include a second central portion 232 having a fifth side wall SW5 and a sixth side wall SW6. The second protruding portion 234 of the second color filter 230 may protrude from a portion of the fifth side wall SW5 and the sixth side wall SW6 and may be disposed at a corner of the second central portion 232.

[0115] Similarly, the third color filter 330 may include a third central portion 332 and a third protruding portion 334. For example, the third color filter 330 may include a third central portion 332 having a seventh side wall SW7 and an eighth side wall SW8. The third protruding portion 334 of the third color filter 330 may protrude from a portion of the seventh side wall SW7 and the eighth side wall SW8, and may be disposed at a corner of the third central portion 332.

[0116] Similarly, the fourth color filter 430 may include a fourth central portion 432 and a fourth protruding portion 434 .

[0117] In some example embodiments, a top surface of the first protrusion portion 134 , the second protrusion portion 234 , the third protrusion portion 334 , and / or the fourth protrusion portion 434 may be L-shaped.

[0118] The distances between the first protruding portion 134, the second protruding portion 234, the third protruding portion 334, and the fourth protruding portion 434 may be smaller than the distances between the first central portion 132, the second central portion 232, the third central portion 332, and the fourth central portion 432. For example, since the first protruding portion 134 protrudes from a portion of the sidewall of the first central portion 132 and the second protruding portion 234 protrudes from a portion of the sidewall of the second central portion 232, the second distance between the first protruding portion 134 and the second protruding portion 234 may be smaller than the first distance D1 between the first central portion 132 and the second central portion 232.

[0119] In some example embodiments, the third distance D3 between the second protruding portion 234 and the third protruding portion 334 may be smaller than the first distance D1 between the first center portion 132 and the second center portion 232 .

[0120] In the case where there is a large gap between the color filters, the air gap AG may not be properly formed in the cover film 140. For example, since the gap between the color filters is wide, especially around the corner of each color filter, the air gap AG may not be properly formed in the cover film 140. However, since the image sensor according to some example embodiments of the present disclosure includes the first protrusion 134, the second protrusion 234, the third protrusion 334, and the fourth protrusion 434, the air gap AG may be formed even in the area near the corner of each color filter.

[0121] Fig. 9 is a layout diagram of an image sensor according to some example embodiments of the present disclosure. Figure 1 to Figure 5e as well as Figure 8 any redundant description of example embodiments.

[0122] refer to Fig. 9 , the top surfaces of the first protrusion 134 , the second protrusion 234 , the third protrusion 334 , and / or the fourth protrusion 434 may be curved or rounded in shape.

[0123] that is, Figure 8 The top surface of the first protrusion 134, the second protrusion 234, the third protrusion 334 and / or the fourth protrusion 434 may be L-shaped, but Fig. 9The top surfaces of the first protrusion 134, the second protrusion 234, the third protrusion 334, and the fourth protrusion 434 may be curved or rounded. However, the present disclosure is not limited to Figure 8 and Fig. 9 The shapes of the first protrusion 134 disposed at the corner of the first center portion 132, the second protrusion 234 disposed at the corner of the second center portion 232, the third protrusion 334 disposed at the corner of the third center portion 332, and the fourth protrusion 434 disposed at the corner of the fourth center portion 432 may vary.

[0124] Fig.10 is a layout diagram of an image sensor according to some example embodiments of the present disclosure. Figure 1 to Figure 5e any redundant description of example embodiments.

[0125] refer to Fig.10 , at least two of the first air gap AG1, the second air gap AG2, the third air gap AG3, and the fourth air gap AG4 may be spaced apart from each other.

[0126] For example, a portion of the cover film 140 on the first side wall SW1 and a portion of the cover film 140 on the second side wall SW2 may be placed in point contact with each other. Since the air gap AG is formed in the cover film 140, the first air gap AG1 disposed on the first side wall SW1 and the second air gap AG2 disposed on the second side wall SW2 may be spaced apart from each other.

[0127] like Fig.10 As shown, the first air gap AG1, the second air gap AG2, the third air gap AG3 and the fourth air gap AG4 may be completely or partially spaced apart from each other. However, in some example embodiments, at least two of the first air gap AG1, the second air gap AG2, the third air gap AG3 and the fourth air gap AG4 may be connected to each other.

[0128] Fig.11 is a layout diagram of an image sensor according to some example embodiments of the present disclosure. Figure 1 to Figure 5e any redundant description of example embodiments.

[0129] refer to Fig.11 , at least two of the first air gap AG1, the second air gap AG2, the third air gap AG3, and the fourth air gap AG4 may be spaced apart from each other.

[0130] For example, a portion of the cover film 140 on the first side wall SW1 and a portion of the cover film 140 on the second side wall SW2 may not be placed in contact with each other. Since the air gap AG is formed in the cover film 140, the first air gap AG1 disposed on the first side wall SW1 and the second air gap AG2 disposed on the second side wall SW2 may be spaced apart from each other.

[0131] like Fig.11 As shown, the first air gap AG1, the second air gap AG2, the third air gap AG3, and the fourth air gap AG4 may be spaced apart from each other. However, in some example embodiments, at least two of the first air gap AG1, the second air gap AG2, the third air gap AG3, and the fourth air gap AG4 may be connected to each other.

[0132] The following will refer to Figure 4 and Figures 12 to 19 A method of manufacturing an image sensor according to some example embodiments of the present disclosure is described.

[0133] Figures 12 to 19 is a cross-sectional view showing a method of manufacturing an image sensor according to some example embodiments of the present disclosure. Figure 1 to Figure 5e any redundant description of example embodiments.

[0134] refer to Fig.12 , providing a substrate 10.

[0135] The substrate 10 may include a first surface 10a and a second surface 10b facing each other. Also, the substrate 10 may include a first photoelectric element 110 and a second photoelectric element 210. The first photoelectric element 110 and the second photoelectric element 210 may correspond to Figure 2 For example, a PD, a phototransistor, a photogate, a PPD, or a combination thereof may be used as the first photoelectric element 110 or the second photoelectric element 210.

[0136] refer to Fig.13 , an insulating structure 30 is formed on the first surface 10 a of the substrate 10 .

[0137] The insulating structure 30 may include a gate structure 32 , an insulating layer 34 and / or a wiring structure 36 .

[0138] The gate structure 32 may be formed on the first surface 10a of the substrate 10. The gate structure 32 may correspond to, for example, Figure 2 The gates of the charge transfer transistor 15, the drive transistor 17, the reset transistor 18 and the select transistor 19.

[0139] The insulating layer 34 may cover and surround the gate structure 32 and the wiring structure 36. That is, the insulating layer 34 may electrically insulate the gate structures 32 from each other, and may electrically insulate the wiring structures 36 from each other.

[0140] The wiring structure 36 may include a stack of multiple wirings.

[0141] refer to Fig.14 , an isolation film 20 is formed in the substrate 10 .

[0142] Therefore, a sensing area of ​​the image sensor may be defined in the substrate 10 . Fig.14 An example in which the isolation film 20 has a tapered shape is shown, but the present disclosure is not limited to this example.

[0143] Thereafter, the substrate 10 is turned upside down. As a result, the first surface 10 a of the substrate 10 becomes the bottom surface of the substrate 10 , and the second surface 10 b of the substrate 10 becomes the top surface of the substrate 10 . Also, the insulating structure 30 may be disposed under the substrate 10 .

[0144] refer to Fig.15 , a lower planarization film 120 is formed on the second surface 10b of the substrate 10. The lower planarization film 120 may include, for example, at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof.

[0145] Thereafter, the first color filter 130 and the second color filter 230 are formed on the lower planarization film 120. For example, the first color filter 130 may be formed to overlap the first photoelectric element 110, and the second color filter 230 may be formed to overlap the second photoelectric element 210.

[0146] Fig.15 An example is shown in which the first color filter 130 and the second color filter 230 are placed in contact with each other, but the present disclosure is not limited thereto. That is, in another example, the first color filter 130 and the second color filter 230 may be formed to be completely or partially spaced apart from each other.

[0147] In some example embodiments, before forming the first color filter 130 and the second color filter 230 , a grid pattern 180 partially covering the lower planarization film 120 may be formed.

[0148] refer to Fig.16 , a mask pattern 190 is formed on the first color filter 130 and the second color filter 230. The mask pattern 190 may expose an interface between the first color filter 130 and the second color filter 230.

[0149] The mask pattern 190 may include, for example, photoresist, but the present disclosure is not limited thereto.

[0150] refer to Fig.17 An etching process is performed using the mask pattern 190 as an etching mask. As a result, a trench TR may be formed between the first color filter 130 and the second color filter 230 .

[0151] For example, the trench TR may be formed between the first color filter 130 and the second color filter 230 by photolithography.

[0152] Fig.17 An example in which the lower planarization film 120 is exposed by an etching process is shown, but the present disclosure is not limited thereto. For example, in some example embodiments, the lower planarization film 120 may not be exposed by an etching process using the mask pattern 190 as an etching mask. That is, after the etching process, the lower portions of the first color filter 130 and the second color filter 230 may be placed in contact with each other.

[0153] refer to Fig.18 , a cap film 140 is formed in the trench TR.

[0154] The cover film 140 may include a material with poor step coverage. Therefore, an air gap AG may be formed in the cover film 140 between opposite side walls of the first and second color filters 130 and 230.

[0155] In the case where the space formed between the first color filter 130 and the second color filter 230 is narrow enough, the upper portion of the cover film 140 may be entirely connected during the formation of the cover film 140, and as a result, the air gap AG may be formed. For example, in the case where the distance between the first color filter 130 and the second color filter 230 is 200 nm or less, the air gap AG may be formed in the cover film 140 during the formation of the cover film 140.

[0156] In the case where the cover film 140 has poor step coverage, the air gap AG can be easily formed. For example, in the case where the distance between the first color filter 130 and the second color filter 230 is 200 nm or less, the air gap AG can be formed by depositing PTEOS to a thickness of 200 nm to 400 nm.

[0157] refer to Fig.19 , an upper planarization film 150 is formed on the cap film 140. The upper planarization film 150 may include, for example, at least one of a silicon oxide film-based material, a silicon nitride film-based material, a resin, and a combination thereof.

[0158] Afterwards, refer to Figure 4 , a microlens 160 and a protective film 170 are formed on the upper planarization film 150 .

[0159] The microlens 160 may include, for example, an organic material, such as a light-transmitting resin. For example, the microlens 160 may be formed by forming an organic material pattern on the upper planarization film 150 and performing a heat treatment operation. As a result of the heat treatment operation, the organic material pattern may form a microlens 160 having a predetermined (or alternatively, desired) radius of curvature and having a convex shape.

[0160] The protective film 170 may be formed along the surface of the microlens 160. The protective film 170 may include, for example, an inorganic material oxide film.

[0161] The following will refer to Figure 4 , Figure 12 to Figure 14 and Figures 17 to 21 A method of manufacturing an image sensor according to some example embodiments of the present disclosure is described.

[0162] Fig. 20 and Fig.21 is a cross-sectional view showing a method of manufacturing an image sensor according to some example embodiments of the present disclosure. Figure 1 to Figure 5e and Figures 12 to 19 any redundant description of example embodiments.

[0163] refer to Fig. 20 ,exist Fig.14 The lower planarization film 120 is formed on the structure shown. That is, the lower planarization film 120 is formed on the second surface 10 b of the substrate 10 .

[0164] Thereafter, the fence 192 is formed on the lower planarization film 120. For example, the fence 192 may be formed on the lower planarization film 120 to overlap with the isolation film 20.

[0165] The fence 192 may include, for example, photoresist, but the present disclosure is not limited thereto.

[0166] refer to Fig.21 , the first color filter 130 and the second color filter 230 are formed on the lower planarization film 120 and the fence 192 .

[0167] For example, the first color filter 130 may be formed on one sidewall of the fence 192 and on the lower planarization film 120, and the second color filter 230 may be formed on the other sidewall of the fence 192 and on the lower planarization film 120. Therefore, the first color filter 130 may be formed to overlap with the first photoelectric element 110, and the second color filter 230 may be formed to overlap with the second photoelectric element 210.

[0168] Fig.21An example is shown in which the height of the top surface of the fence 192 is greater than the height of the top surface of the first color filter 130 and the second color filter 230, but the present disclosure is not limited thereto. For example, the height of the top surface of the first color filter 130 and the second color filter 230 may be substantially the same as the height of the top surface of the fence 192.

[0169] Afterwards, refer to Fig.17 , the fence 192 may be removed. As a result, a trench TR may be formed between the first color filter 130 and the second color filter 230 .

[0170] Although the inventive concept has been specifically shown and described with reference to the exemplary embodiments of the inventive concept, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the inventive concept as defined in the appended claims. Therefore, it is desired that the present exemplary embodiments be considered in all respects as illustrative and not restrictive, with reference to the appended claims rather than the foregoing description to indicate the scope of the invention.

Claims

1. An image sensor, comprising: a substrate including an optoelectronic component; a first color filter on the substrate; a second color filter, adjacent to the first color filter on the substrate; as well as a cover film formed between and on the sidewalls of the first color filter and the second color filter, the cover film including an air gap encapsulated within a portion of the cover film between the sidewalls of the first color filter and the second color filter, and the cover film directly contacts the top surface and the sidewalls of the first color filter and the second color filter, Wherein, the covering film includes low temperature oxide.

2. The image sensor according to claim 1, wherein The air gap includes a first sub-air gap and a second sub-air gap on the first sub-air gap, The width of the first sub-air gap gradually increases as it moves away from the substrate, and The width of the second sub-air gap gradually decreases as it moves away from the substrate.

3. The image sensor according to claim 2, wherein: A first height from a lowermost portion of the first sub-air gap to an uppermost portion of the first sub-air gap is smaller than a second height from a lowermost portion of the second sub-air gap to an uppermost portion of the second sub-air gap.

4. The image sensor according to claim 2, wherein: A first height from a lowermost portion of the first sub-air gap to an uppermost portion of the first sub-air gap is greater than a second height from a lowermost portion of the second sub-air gap to an uppermost portion of the second sub-air gap.

5. The image sensor according to claim 1, wherein: A first height from a bottom surface of the cover film to a lowermost portion of the air gap is greater than a second height from an uppermost portion of the air gap to a top surface of the cover film.

6. The image sensor according to claim 1, wherein: A first height from a bottom surface of the cover film to a lowermost portion of the air gap is smaller than a second height from an uppermost portion of the air gap to a top surface of the cover film.

7. The image sensor according to claim 1, wherein: The cover film has a refractive index smaller than a refractive index of the first color filter and a refractive index of the second color filter.

8. The image sensor according to claim 1, wherein: The cover film includes phenyltriethoxysilane PTEOS.

9. The image sensor according to claim 1, wherein: A distance between the first color filter and the second color filter is 200 nm or less.

10. An image sensor, comprising: a substrate including an optoelectronic component; a color filter on the substrate and having a first sidewall, a second sidewall intersecting the first sidewall, a third sidewall opposite to the first sidewall, and a fourth sidewall opposite to the second sidewall; as well as a covering film formed on the first side wall, the second side wall, the third side wall, and the fourth side wall and on the color filter, the covering film having a first air gap, a second air gap, a third air gap, and a fourth air gap encapsulated in the covering film along the first side wall, the second side wall, the third side wall, and the fourth side wall, respectively, and the covering film directly contacts the top surface and the side wall of the color filter, Wherein, the covering film includes low temperature oxide.

11. The image sensor according to claim 10, wherein: The cover film also extends along the top surface of the color filter.

12. The image sensor according to claim 10, wherein: The first air gap, the second air gap, the third air gap, and the fourth air gap are continuous to surround the color filter.

13. The image sensor according to claim 10, wherein: The color filter includes: a central portion, wherein the central portion includes the first side wall and the second side wall; and a protruding portion, wherein the protruding portion protrudes a portion of the first side wall and the second side wall and is located at a corner of the central portion.

14. The image sensor according to claim 10, wherein: At least two of the first air gap, the second air gap, the third air gap, and the fourth air gap are spaced apart from each other.

15. An image sensor comprising: a substrate including an optoelectronic component; a first color filter on the substrate and including a first sidewall; a second color filter on the substrate and including a second sidewall opposite to the first sidewall; as well as a cover film formed between the first sidewall and the second sidewall and on the first color filter and the second color filter, the cover film having a gap encapsulated in a portion of the cover film between the first sidewall and the second sidewall, and the cover film directly contacts the top surface and the sidewalls of the first color filter and the second color filter, Wherein, the covering film includes low temperature oxide.

16. The image sensor according to claim 15, wherein The cover film includes a first portion extending along the first sidewall and a second portion extending along the second sidewall, and The first portion and the second portion define the void.

17. The image sensor according to claim 16, wherein The cover film further includes a third portion extending along the top surface of the first color filter and a fourth portion extending along the top surface of the second color filter, and The thickness of the first portion is smaller than the thickness of the third portion.

18. The image sensor according to claim 15, wherein The first color filter includes a third sidewall intersecting the first sidewall and a first protrusion protruding from a corner defined by the first sidewall and the third sidewall, The second color filter includes a fourth sidewall intersecting the second sidewall and a second protruding portion protruding from a corner defined by the second sidewall and the fourth sidewall, A distance between the first protruding portion and the second protruding portion is smaller than a distance between the first side wall and the second side wall.

19. The image sensor according to claim 18, further comprising: a third color filter including a fifth sidewall opposite to the third sidewall and a sixth sidewall intersecting the fifth sidewall, wherein the third color filter further includes a third protruding portion, the third protruding portion protruding from a corner defined by the fifth side wall and the sixth side wall, and A distance between the second protruding portion and the third protruding portion is smaller than a distance between the first side wall and the second side wall.

20. The image sensor according to claim 18, wherein: Top surfaces of the first protruding portion and the second protruding portion are L-shaped.

Images