Substrate processing device and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method capable of strongly cleaning a substrate are provided. A substrate processing apparatus according to an embodiment includes a holding portion, a first cleaning body, a first moving mechanism, a second cleaning body, a second moving mechanism, and a control portion. The holding portion holds a substrate. The first cleaning body cleans one of upper and lower surfaces of the substrate held by the holding portion by spraying a fluid to the one surface or by contacting the one surface. The first moving mechanism moves the first cleaning body horizontally. The second cleaning body cleans the other of the upper and lower surfaces of the substrate held by the holding portion by contacting the other surface. The second moving mechanism moves the second cleaning body horizontally. The control portion controls the first and second moving mechanisms to perform a two-surface cleaning process in which the first cleaning body that sprays the fluid to the one surface or contacts the one surface and the second cleaning body that contacts the other surface are moved horizontally in synchronization.

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Conventionally, there is known a substrate processing apparatus that physically cleans a substrate using a brush, a sponge, etc. For example, Patent Document 1 discloses a substrate processing apparatus including a brush for cleaning the upper surface of a substrate.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2010-109225 Summary of the Invention

[0004] Problem to be solved by the invention

[0005] However, in the prior art, since the brush is pressed against the substrate, the substrate warps in the direction of separation from the brush, making it difficult to apply a strong force to the substrate. Therefore, in the prior art, it is difficult to clean the substrate with force.

[0006] An object of one aspect of the embodiment is to provide a substrate processing apparatus and a substrate processing method capable of powerfully cleaning a substrate.

[0007] Solution to the problem

[0008] A substrate processing device according to one embodiment includes a holding portion, a first cleaning body, a first moving mechanism, a second cleaning body, a second moving mechanism, and a control portion. The holding portion holds the substrate. The first cleaning body cleans one surface by spraying a fluid onto one of the upper and lower surfaces of the substrate held by the holding portion or by coming into contact with one surface. The first moving mechanism moves the first cleaning body horizontally. The second cleaning body comes into contact with the other of the upper and lower surfaces of the substrate held by the holding portion to clean the other surface. The second moving mechanism moves the second cleaning body horizontally. The control portion controls the first moving mechanism and the second moving mechanism to perform a two-sided cleaning process in which the first cleaning body that sprays a fluid onto one surface or comes into contact with one surface is synchronously moved horizontally with the second cleaning body that comes into contact with the other surface.

[0009] Effects of the invention

[0010] According to one aspect of the embodiment, the substrate can be cleaned strongly. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a plan view showing the structure of the substrate processing apparatus according to the first embodiment.

[0012] Figure 2It is a longitudinal sectional view showing the structure of the substrate processing apparatus according to the first embodiment.

[0013] Figure 3 This is a flowchart showing a series of cleaning processes performed by the substrate processing apparatus.

[0014] Figure 4 This is a diagram showing an example of the operation of the carry-in process.

[0015] Figure 5 This is a diagram showing an example of the operation of the carry-in process.

[0016] Figure 6 It is a diagram showing an operation example of the lower surface cleaning process.

[0017] Figure 7 It is a diagram showing an operation example of the lower surface cleaning process.

[0018] Figure 8 It is a diagram showing an operation example of the lower surface cleaning process.

[0019] Figure 9 It is a diagram showing an operation example of double-side cleaning processing.

[0020] Figure 10 It is a diagram showing an operation example of double-side cleaning processing.

[0021] Figure 11 It is a diagram showing an operation example of double-side cleaning processing.

[0022] Figure 12 It is a diagram showing an operation example of double-side cleaning processing.

[0023] Figure 13 It is a diagram showing an operation example of double-side cleaning processing.

[0024] Figure 14 This is a diagram showing an example of a case where only the lower surface of the wafer is cleaned.

[0025] Figure 15 This is a diagram showing an example of a case where both surfaces of a wafer are cleaned simultaneously.

[0026] Figure 16 This is a diagram showing another example of the timing for synchronously starting the first cleaning element and the second cleaning element.

[0027] Figure 17 This is a diagram showing another example of the timing for synchronously starting the first cleaning element and the second cleaning element.

[0028] Figure 18 This is a diagram showing another example of the position where the second cleaning element and the first cleaning element overlap.

[0029] Figure 19 It is a diagram showing another operation example of the double-side cleaning process.

[0030] Figure 20 It is a diagram showing another operation example of the double-side cleaning process.

[0031] Figure 21 It is a diagram showing another operation example of the double-side cleaning process.

[0032] Figure 22 It is a figure which shows the height position of the upper cup during the lower surface cleaning process.

[0033] Figure 23 It is a figure which shows the height position of the upper cup in the double-side washing process.

[0034] Figure 24 It is a figure which shows the example of another cleaning tool.

[0035] Figure 25 It is a diagram showing an operation example of the double-side cleaning process according to the fourth embodiment.

[0036] Figure 26 It is a diagram showing an operation example of a tool cleaning process.

[0037] Figure 27 It is a plan view showing the structure of a substrate processing apparatus according to a sixth embodiment.

[0038] Figure 28 It is a longitudinal sectional view showing the structure of a substrate processing apparatus according to a sixth embodiment.

[0039] Figure 29 It is a diagram showing an operation example of the double-side cleaning process according to the sixth embodiment.

[0040] Figure 30 It is a diagram showing an operation example of the double-side cleaning process according to the sixth embodiment.

[0041] Figure 31 It is a perspective view showing the structure of a second cleaning element according to the seventh embodiment.

[0042] Figure 32 It is a longitudinal sectional view showing the structure of a second cleaning element according to the seventh embodiment.

[0043] Figure 33 This is a diagram showing a state where the second cleaning body according to the seventh embodiment is pressed against a wafer.

[0044] Figure 34 It is a side view showing the structure of a substrate processing apparatus according to an eighth embodiment.

[0045] Figure 35 This is a top view showing the wafer, cleaning body, polishing body, and rotating plate.

[0046] Figure 36 This is a top view showing the wafer, cleaning body, polishing body, and rotating plate.

[0047] Figure 37 It is a plan view showing the structure of a substrate processing apparatus according to a ninth embodiment.

[0048] Figure 38 It is a diagram showing an operation example of the lower surface cleaning process in the ninth embodiment.

[0049] Figure 39 1 and 2 are diagrams showing an operation example of a double-side cleaning process in the ninth embodiment.

[0050] Reference Signs List

[0051] W: wafer; 1: substrate processing device; 10: suction cup; 11: spin chuck; 13: housing; 14: support plate; 15: frame; 16: upper cup; 17: first cleaning part; 18: second cleaning part; 171: first cleaning body; 181: second cleaning body; 200: control part. DETAILED DESCRIPTION

[0052] The following describes in detail the methods for implementing the substrate processing apparatus and substrate processing method involved in the present application (hereinafter referred to as "embodiments") with reference to the accompanying drawings. The substrate processing apparatus and substrate processing method involved in the present application are not limited by these embodiments. Furthermore, the various embodiments can be appropriately combined within the scope of not causing inconsistencies in the processing contents. In addition, in the following embodiments, identical parts are marked with the same reference numerals, and repeated descriptions are omitted.

[0053] (First embodiment)

[0054] First, refer to Figure 1 and Figure 2 The structure of the substrate processing apparatus according to the first embodiment will be described. Figure 1 1 is a top view showing the structure of the substrate processing apparatus according to the first embodiment. Figure 2 This is a longitudinal cross-sectional view showing the structure of the substrate processing apparatus according to Embodiment 1. Hereinafter, to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, with the positive direction of the Z-axis being the vertically upward direction.

[0055] The substrate processing device 1 includes two suction cups 10 for adsorbing and holding the lower surface of a substrate such as a semiconductor wafer, a glass substrate (hereinafter referred to as wafer W) in a horizontal position, a rotating chuck 11 for adsorbing and holding the lower surface of the wafer W received from the suction cups 10 in a horizontal position, a shell 13 with an open upper surface, a first cleaning unit 17 for cleaning the upper surface of the wafer W, and a second cleaning unit 18 for cleaning the lower surface of the wafer W.

[0056] Furthermore, a circuit is formed on at least one of the upper surface and the lower surface of the wafer W. Here, it is assumed that the circuit is formed on the upper surface of the wafer W.

[0057] like Figure 1 As shown, the two suction cups 10 are formed into an elongated, roughly rectangular shape and are arranged to sandwich the rotary chuck 11 and be roughly parallel when viewed from above so as to be able to hold the peripheral edge of the lower surface of the wafer W. Each suction cup 10 is supported by a roughly rectangular support plate 14 that is longer than the suction cup 10. The suction cup 10 is rotated in the horizontal direction ( Figure 1 X-axis direction) and up and down direction ( Figure 1 The frame 15 that is free to move in the Z-axis direction (direction of the axis) supports the two end portions of the support plate 14.

[0058] An upper cup 16 is provided on the upper surface of the frame 15. An opening having a diameter larger than that of the wafer W is formed on the upper surface of the upper cup 16. The wafer W is transferred between the transfer mechanism provided outside the substrate processing apparatus 1 and the chuck 10 through the opening.

[0059] like Figure 2 As shown, the spin chuck 11 is connected to a drive mechanism 21 via a shaft 20. The spin chuck 11 is freely rotated and moved up and down by the drive mechanism 21.

[0060] Three lift pins 22 are provided around the spin chuck 11 and are movable upward and downward by a lift mechanism (not shown).

[0061] A discharge pipe 40 for discharging the cleaning liquid and an exhaust pipe 41 for forming a downward airflow in the substrate processing apparatus 1 and exhausting the airflow are provided at the bottom of the housing 13 .

[0062] Next, the structures of the first cleaning unit 17 and the second cleaning unit 18 will be described. Figure 2 As shown, the first cleaning unit 17 includes a first cleaning body 171 , a first support member 172 , and a first driving unit 173 .

[0063] The first cleaning body 171 is a member that is pressed against the upper surface of the wafer W. For example, the first cleaning body 171 is a brush composed of a large number of bristles. The lower surface of the first cleaning body 171, i.e., the contact surface with the wafer W, has a circular shape that is smaller than the upper surface of the wafer W. Alternatively, the first cleaning body 171 may be a sponge.

[0064] A first support member 172 is provided on the upper surface of the first cleaning body 171. The first support member 172 extends in the vertical direction (Z-axis direction) and supports the first cleaning body 171 at one end thereof.

[0065] A first driving unit 173 is provided at the other end of the first support member 172. The first driving unit 173 rotates the first support member 172 about the vertical axis. This allows the first cleaning body 171 supported by the first support member 172 to rotate about the vertical axis.

[0066] First cleaning unit 17 is supported horizontally by arm 70. Cleaning nozzle 70a for supplying cleaning fluid to the upper surface of wafer W held by spin chuck 11 is provided on arm 70 adjacent to first cleaning unit 17. Pure water, for example, is used as the cleaning fluid.

[0067] The arm 70 is provided with a load detection unit 75 for detecting the pressing force of the first cleaning body 171 on the wafer W. The load detection unit 75 is, for example, a load sensor.

[0068] The arm 70 is connected to a moving unit 71. The moving unit 71 moves the arm 70 horizontally along a guide rail 72 extending in a horizontal direction (here, the X-axis direction). The moving unit 71 also moves the arm 70 up and down in a vertical direction (the Z-axis direction).

[0069] The second cleaning unit 18 includes a second cleaning body 181 , a second support member 182 , and a second driving unit 183 .

[0070] The second cleaning body 181 is a member that is pressed against the lower surface of the wafer W. For example, the second cleaning body 181 is a brush composed of a large number of bristles. The upper surface of the second cleaning body 181, i.e., the contact surface with the wafer W, has a circular shape that is smaller than the upper surface of the wafer W. Alternatively, the second cleaning body 181 may be a sponge.

[0071] A second support member 182 is provided on the lower surface of the second cleaning body 181. The second support member 182 extends in the vertical direction (Z-axis direction) and supports the second cleaning body 181 at one end thereof.

[0072] A second driving unit 183 is provided at the other end of the second support member 182. The second driving unit 183 rotates the second support member 182 about the vertical axis.

[0073] Second cleaning unit 18 is supported horizontally by arm 80. Cleaning nozzle 80a for supplying cleaning fluid to the lower surface of wafer W held on chuck 10 or spin chuck 11 is provided on arm 80 adjacent to second cleaning body 181. Pure water, for example, is used as the cleaning fluid.

[0074] The arm 80 is connected to a moving unit 81. The moving unit 81 moves the arm 80 horizontally along a guide rail 82 extending in a horizontal direction (here, the Y-axis direction). The moving unit 81 also moves the arm 80 up and down in a vertical direction (the Z-axis direction).

[0075] The arm 80 is extended and retracted in the horizontal direction (X-axis direction) by a driving unit (not shown), thereby enabling the arm 80 to move the second cleaning unit 18 and the cleaning nozzle 80a in the X-axis direction, which is the same direction as the movement direction of the first cleaning unit 17.

[0076] The arm 80 is provided with a load detection unit 85 for detecting the pressing force of the second cleaning body 181 on the wafer W. The load detection unit 85 is, for example, a load sensor.

[0077] like Figure 1 As shown, a control unit 200 is provided in the above substrate processing device 1. The control unit 200 is, for example, a computer, and has a program storage unit (not shown). In the program storage unit, a program for controlling the processing of the wafer W in the substrate processing device 1 is stored. In addition, in the program storage unit, a program for controlling the actions of the above-mentioned various driving devices, moving devices and other driving systems, and various nozzles to realize the cleaning processing in the substrate processing device 1 is also stored. In addition, the above-mentioned program can be recorded in a computer-readable storage medium H such as a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, etc., and installed from the storage medium H to the control unit 200.

[0078] Next, a description will be given of a cleaning process of the wafer W in the substrate processing apparatus 1 . Figure 3 1 is a flow chart showing a series of cleaning processes performed by the substrate processing apparatus 1. Figure 4 and Figure 5 This is a diagram showing an example of the operation of the carry-in process. Figure 6 to Figure 8 : is a diagram showing an example of the operation of the lower surface cleaning process, Figure 9 to Figure 13 A diagram showing an example of the operation of double-side cleaning processing.

[0079] like Figure 3 As shown in FIG. 1 , in the substrate processing apparatus 1, first, a loading process is performed (step S101). Figure 4As shown, the wafer W is transported to the top of the upper cup 16 by the transport mechanism 90 provided outside the substrate processing apparatus 1. Then, the lift pins 22 rise and transfer the wafer W to the lift pins 22. At this time, the suction cup 10 is on standby at a position where its upper surface is higher than the upper surface of the second cleaning body 181, and the spin chuck 11 retreats to a position where its upper surface is lower than the upper surface of the second cleaning body 181. Thereafter, the lift pins 22 descend, as shown in FIG. Figure 5 As shown, the wafer W is transferred to the chuck 10 and is held by suction.

[0080] Next, the lower surface cleaning process is performed (step S102). In the lower surface cleaning process, first, as shown in FIG. Figure 6 As shown, the suction cup 10 holding the wafer W is moved in the horizontal direction (here, the X-axis direction) together with the support plate 14 and the upper cup 16. As a result, the spin chuck 11 is positioned near the outer periphery of the wafer W, and the second cleaning unit 18 is positioned near the center of the wafer W.

[0081] Then, if Figure 7 As shown, for example, using the moving part 81 (refer to Figure 2 ) to raise the second cleaning section 18, thereby pressing the second cleaning body 181 against the lower surface of the wafer W. At this time, the moving section 81 raises the second cleaning section 18 so that the pressing force of the second cleaning body 181 against the wafer W reaches a desired value. For example, the distance to raise the second cleaning section 18 can be determined based on the detection result of the load detection section 85. Here, the second cleaning section 18 is raised, but the lower surface of the wafer W can be pressed against the second cleaning body 181 by lowering the suction cup 10. Alternatively, the suction cup 10 can be lowered while the second cleaning section 18 is raised.

[0082] Then, the cleaning nozzle 80a (see Figure 1 ) Pure water is supplied to the lower surface of the wafer W. In addition, the rotation of the second cleaning body 181 is started.

[0083] The cleaning of the lower surface of the wafer W by the second cleaning unit 18 is performed by a combination of the movement of the wafer W by the suction cup 10 and the movement of the second cleaning unit 18 by the moving unit 81. Figure 8 As shown, second cleaning body 181 is reciprocated along the Y-axis between the two suction cups 10. When the movement direction of second cleaning body 181 is switched, suction cups 10 are moved in the negative X-axis direction by a distance equal to or less than the diameter of second cleaning body 181. Thus, central area A of wafer W, including the area held by spin chuck 11, is cleaned by second cleaning body 181. Thereafter, rotation of second cleaning body 181 is stopped, and the supply of pure water from cleaning nozzle 80a is stopped.

[0084] Next, a double-sided cleaning process is performed (step S103). In the double-sided cleaning process, first, Figure 9 As shown, after the suction cup 10 is moved so that the center of the wafer W is located above the spin chuck 11 , the suction of the wafer W by the suction cup 10 is released and the spin chuck 11 is raised, thereby transferring the wafer W from the suction cup 10 to the spin chuck 11 .

[0085] In addition, if Figure 10 As shown, when using the moving part 71 (refer to Figure 2 ) to position the first cleaning unit 17 above the center of the wafer W, the first cleaning unit 17 is lowered to press the first cleaning body 171 against the upper surface of the wafer W. At this time, the moving unit 71 lowers the first cleaning unit 17 so that the pressing force of the first cleaning body 171 against the wafer W reaches a desired value, specifically, the same value as the pressing force of the second cleaning body 181 against the wafer W. The distance to lower the first cleaning unit 17 can be determined based on the detection result of the load detection unit 75, for example.

[0086] Here, pressure control is performed on both the first cleaning section 17 and the second cleaning section 18 based on the detection results of the load detection sections 75 and 85 so that the pushing force against the wafer W is a desired value. However, pressure control may not be performed on one of the first cleaning section 17 and the second cleaning section 18, but position control may be performed to maintain the first cleaning section 17 at a predetermined height. For example, the first cleaning section 17 may maintain the first cleaning body 171 at a predetermined height, while the height position of the second cleaning section 18 may be adjusted based on the detection results of the load detection section 85 so that the pushing force against the wafer W by the second cleaning section 18 is a desired value. Thus, the upper and lower surfaces of the wafer W can be cleaned with the same pushing force by controlling the pressure of only one of the first cleaning section 17 and the second cleaning section 18, thereby facilitating adjustment of the pushing force.

[0087] Then, if Figure 11 As shown, the wafer W is rotated by rotating the spin chuck 11 using the drive mechanism 21. Furthermore, pure water is supplied from the cleaning nozzle 70a to the upper surface of the wafer W, and the rotation of the first cleaning body 171 is started. Then, the first cleaning body 171 is moved horizontally (in the positive direction of the X-axis) using the moving portion 71. As a result, the central area of ​​the upper surface of the wafer W is cleaned by the first cleaning body 171. Furthermore, after the wafer W and the first cleaning body 171 are rotated, the first cleaning body 171 may be pressed against the wafer W.

[0088] The second cleaning body 181 is stopped at a position extending from the center of the wafer W to the guide rail 72 (see FIG. Figure 1That is, the second cleaning body 181 is arranged at a position overlapping with the path of the first cleaning body 171 when viewed from above.

[0089] Then, if Figure 12 As shown, when the first cleaning body 171 reaches the position where the first cleaning body 171 and the second cleaning body 181 overlap when viewed from above, the cleaning nozzle 80a (see FIG. Figure 1 ) supplies pure water to the lower surface of the wafer W, and starts the rotation of the second cleaning body 181. Then, as Figure 13 As shown, the first cleaning body 171 and the second cleaning body 181 are horizontally moved at the same speed in the same direction (X-axis positive direction) toward the outer periphery of the wafer W, so as to maintain the first cleaning body 171 and the second cleaning body 181 overlapping in a plan view. In other words, the first cleaning body 171 and the second cleaning body 181 are horizontally moved synchronously.

[0090] While the first cleaning body 171 and the second cleaning body 181 are being moved horizontally in synchronization with each other, the pressing force of the first cleaning body 171 on the wafer W is adjusted to be the same as the pressing force of the second cleaning body 181 on the wafer W. Therefore, the wafer W can be prevented from being pressed downward by the first cleaning body 171 or from being pressed upward by the second cleaning body 181.

[0091] When the first cleaning body 171 and the second cleaning body 181 reach the outer periphery of the wafer W, the rotation of the first cleaning body 171 and the second cleaning body 181 is stopped, and the supply of pure water from the cleaning nozzles 70a and 80a is stopped.

[0092] Furthermore, it is preferable to stop the supply of pure water from cleaning nozzle 70a after stopping the supply of pure water from cleaning nozzle 80a. This prevents pure water from flowing from the lower surface of wafer W to the upper surface of wafer W, which serves as the circuit-forming surface. However, this is not limiting, and the supply of pure water from cleaning nozzles 70a and 80a may also be stopped simultaneously.

[0093] Next, a drying process is performed (step S104 ). In the drying process, the spin chuck 11 is rotated at a high speed to shake off the pure water adhering to the wafer W, thereby drying the wafer W.

[0094] Thereafter, the unloading process is performed (step S105 ). In the unloading process, the wafer W is delivered to the transport mechanism 90 in the reverse order of the loading process (step S101 ). Thus, a series of cleaning processes for one wafer W is completed.

[0095] As described above, the substrate processing apparatus 1 according to the first embodiment performs double-surface cleaning processing for simultaneously cleaning both the upper and lower surfaces of the wafer W by synchronously moving the first cleaning unit 17 and the second cleaning unit 18 horizontally.

[0096] Thus, compared with the case where the upper surface of the wafer W and the lower surface of the wafer W are cleaned independently, the wafer W can be cleaned with a stronger pressing force. Figure 14 and Figure 15 To explain. Figure 14 : is a diagram showing an example of a case where only the lower surface of the wafer W is cleaned. Figure 15 1 and 2 are diagrams showing an example of a case where both surfaces of a wafer W are cleaned simultaneously.

[0097] like Figure 14 As shown, for example, when the second cleaning unit 18 is used to clean only the lower surface of the wafer W, the second cleaning body 181 is pressed against the wafer W, causing the wafer W to warp in a direction away from the second cleaning body 181, making it difficult to apply a strong force to the wafer W. This also applies to the case where the first cleaning body 171 is used to clean only the upper surface of the wafer W.

[0098] Furthermore, when using the second cleaning unit 18 to clean only the lower surface of the wafer W, the second cleaning body 181 presses against the wafer W, exerting an upward force on the wafer W. This creates a risk of the wafer W falling off the spin chuck 11. Consequently, the pressing force of the second cleaning body 181 is constrained by the suction force of the spin chuck 11. In other words, the pressing force is limited to a level sufficient to prevent the wafer W from falling off the spin chuck 11. For these reasons, it is particularly difficult to vigorously clean the lower surface of the wafer W.

[0099] In contrast, in the substrate processing apparatus 1 according to the first embodiment, the wafer W is clamped between the first cleaning unit 17 and the second cleaning unit 18 to press the wafer W from both above and below. This allows the force exerted by the first cleaning unit 17 on the wafer W to press downward and the force exerted by the second cleaning unit 18 on the wafer W to lift upward to offset each other. Consequently, the pushing force of the first cleaning unit 17 and the second cleaning unit 18 can be set high without causing the wafer W to warp and without being constrained by the suction force of the spin chuck 11. For example, the pushing force exerted on the lower surface of the wafer W can be aligned with the pushing force of the first cleaning unit 171, which is determined based on the allowable force applied to the upper surface of the wafer W (e.g., a force that does not excessively scrape the film) or a force that allows for efficient cleaning of the upper surface of the wafer W. This allows the lower surface of the wafer W to be cleaned with a stronger pushing force than would be achieved by taking into account the constraints imposed by the suction force of the spin chuck 11.

[0100] As described above, according to the substrate processing apparatus 1 according to the first embodiment, the wafer W can be cleaned more powerfully than when a single cleaning body is used to clean only one surface of the wafer W.

[0101] In addition, according to the substrate processing device 1 involved in the first embodiment, by cleaning the upper surface and the lower surface of the wafer W at the same time, the time required for cleaning both surfaces of the wafer W can be shortened compared to, for example, cleaning one surface of the wafer W and then using a flipping mechanism to flip the wafer W over and then clean the other surface.

[0102] In the substrate processing apparatus 1 according to the first embodiment, for example, when the first cleaning body 171 and the second cleaning body 181 completely overlap when viewed from above, specifically, when the rotation centers of the first cleaning body 171 and the second cleaning body 181 coincide when viewed from above, the second cleaning body 181 is horizontally moved synchronously with the first cleaning body 171. This allows for more reliable suppression of warping of the wafer W than when the first cleaning body 171 and the second cleaning body 181 are horizontally moved with the rotation centers of the first cleaning body 171 and the second cleaning body 181 offset from each other.

[0103] Regarding the force on the first cleaning body 171, when the first cleaning body 171 deviates toward the center side of the wafer W, the force becomes lower than when the position of the first cleaning body 171 is not deviated, and when the first cleaning body 171 deviates toward the periphery side, the force becomes higher than when the position of the first cleaning body 171 is not deviated. Therefore, the control unit 200 can be based on the load detection unit 75 (refer to Figure 2 ) detection result to detect the position deviation of the first cleaning body 171. With respect to the second cleaning body 181, the control unit 200 can detect the position deviation of the second cleaning body 181 based on the detection result of the load detection unit 85.

[0104] The dimensions of the contact surface between the first cleaning body 171 and the wafer W can be the same as or different from the dimensions of the contact surface between the second cleaning body 181 and the wafer W. For example, it may be desirable to clean the circuit-formed surface of the wafer W more gently than the surface without circuits. In such cases, the dimensions of the contact surface of the first cleaning body 171, which cleans the circuit-formed surface (i.e., the top surface) of the wafer W, can be made larger than the dimensions of the contact surface of the second cleaning body 181. By increasing the dimensions of the contact surface, even when the first and second cleaning bodies 171 and 181 are pressed against the wafer W with the same force, the force per unit area applied to the top surface of the wafer W can be smaller than the force per unit area applied to the bottom surface. This allows the top surface of the wafer W to be cleaned more gently than the bottom surface. Alternatively, the dimensions of the contact surface of the second cleaning body 181, which cleans the bottom surface of the wafer W, can be made larger than the dimensions of the contact surface of the first cleaning body 171. By increasing the dimensions of the contact surface, the target surface can be cleaned in a shorter time. Furthermore, by increasing the size of the contact surface, the cleaning target portion of the wafer W can be cleaned with a smaller movement distance, thereby miniaturizing the driving unit (eg, the guide rails 72 and 82 ).

[0105] Furthermore, if it is desired to gently clean the circuit-formed surface of the wafer W, the first cleaning body 171 for cleaning the circuit-formed surface, i.e., the upper surface, of the wafer W may be formed of a material softer than the second cleaning body 181. By forming the first cleaning body 171 of a soft material, the circuit-formed surface is less likely to be damaged, and thus the upper surface of the wafer W can be cleaned more gently than the lower surface.

[0106] In addition, here, it is assumed that the first cleaning body 171 and the second cleaning body 181 completely overlap when viewed from above, in other words, when the rotation center of the first cleaning body 171 coincides with the rotation center of the second cleaning body 181 when viewed from above, so that the second cleaning body 181 moves synchronously with the first cleaning body 171. However, the timing for starting the synchronization of the first cleaning body 171 and the second cleaning body 181 is not limited to the above example. Figure 16 and Figure 17 Provide explanation. Figure 16 and Figure 17 This is a diagram showing another example of the timing for starting the first cleaning body 171 and the second cleaning body 181 synchronously.

[0107] In the above example, the second cleaning body 181 is synchronized with the first cleaning body 171 when the first cleaning body 171 moves in the positive direction of the X-axis and the rotation center R1 of the first cleaning body 171 coincides with the rotation center R2 of the second cleaning body 181 when viewed from above. However, synchronization between the first cleaning body 171 and the second cleaning body 181 may be initiated while the contact surfaces of the first cleaning body 171 and the wafer W coincide with the contact surfaces of the second cleaning body 181 and the wafer W when viewed from above.

[0108] Thus, for example Figure 16 As shown, the second cleaning body 181 can be moved synchronously with the first cleaning body 171 after a portion of the contact surface of the first cleaning body 171 overlaps with a portion of the contact surface of the second cleaning body 181 due to the movement of the first cleaning body 171 in the X-axis direction and before the rotation center R1 of the first cleaning body 171 and the rotation center R2 of the second cleaning body 181 coincide with each other when viewed from above. Figure 17 As shown, as long as the contact surface of the first cleaning body 171 overlaps with the contact surface of the second cleaning body 181, the second cleaning body 181 can be moved synchronously with the first cleaning body 171 after the rotation center R1 of the first cleaning body 171 and the rotation center R2 of the second cleaning body 181 are aligned when viewed from above.

[0109] In addition, the contact surface of the second cleaning body 181 does not necessarily need to coincide with the contact surface of the first cleaning body 171 when viewed from above. Figure 18 Provide explanation. Figure 18 1 and 2 are diagrams showing another example of the overlapping position of the second cleaning body 181 and the first cleaning body 171.

[0110] like Figure 18 As shown, the second cleaning body 181 can also be moved horizontally synchronously with the first cleaning body 171, maintaining the contact area between the first cleaning body 171 and the upper surface of the wafer W (hereinafter referred to as contact area B) and the contact surface between the second cleaning body 181 and the wafer W overlapping when viewed from above during one rotation of the wafer W about the central axis C. Even in this case, the force exerted by the first cleaning unit 17 on the wafer W while pressing down can be reduced by the force exerted by the second cleaning unit 18 on the wafer W. Therefore, the pressing force of the second cleaning unit 18 can be set high without causing wafer W to warp and without being restricted by the suction force of the spin chuck 11.

[0111] Reference Figure 19 to Figure 21 An example of double-side cleaning processing in this case will be described. Figure 19 to Figure 21 This is a diagram showing another example of the double-side cleaning process.

[0112] For example Figure 19As shown, first cleaning body 171 is brought into contact with the upper surface of the end portion on the positive X-axis side of wafer W, and second cleaning body 181 is brought into contact with the lower surface of the end portion on the positive X-axis side of wafer W. Next, first cleaning body 171 and second cleaning body 181 are rotated, and moved at the same speed along the negative X-axis direction toward the end portion on the negative X-axis side of wafer W. Thus, second cleaning body 181 moves while maintaining a state of overlapping with contact area B when viewed from above.

[0113] Then, if Figure 20 As shown, the movement and rotation of the second cleaning body 181 are stopped at the position before interfering with the rotary chuck 11. On the other hand, about the first cleaning body 171, continue to move it. Thus, the synchronization of the first cleaning body 171 and the second cleaning body 181 is released.

[0114] Then, if Figure 21 As shown, first cleaning body 171 further moves toward the negative X-axis direction. When second cleaning body 181 overlaps contact area B again when viewed from above, second cleaning body 181 is rotated, moving at the same speed as first cleaning body 171 and in the opposite direction. Thus, second cleaning body 181 moves while maintaining its position overlapping contact area B when viewed from above. Afterwards, when first cleaning body 171 reaches the negative X-axis end of wafer W and second cleaning body 181 reaches the positive X-axis end of wafer W, the rotation of first cleaning body 171 and second cleaning body 181 is stopped, completing the double-side cleaning process.

[0115] As described above, the substrate processing apparatus 1 according to the first embodiment includes a rotary chuck 11 (an example of a holding portion), a first cleaning body 171, an arm 70, a moving portion 71, and a guide rail 72 (an example of a first moving mechanism), a second cleaning body 181, an arm 80, a moving portion 81, and a guide rail 82 (an example of a second moving mechanism), and a control unit 200. The rotary chuck 11 holds a wafer W (an example of a substrate). The first cleaning body 171 contacts the upper surface of the wafer W held by the rotary chuck 11 to clean the upper surface of the wafer W. The arm 70, the moving portion 71, and the guide rail 72 move the first cleaning body 171 horizontally. The second cleaning body 181 contacts the lower surface of the wafer W held by the rotary chuck 11 to clean the lower surface of the wafer W. The arm 80, the moving portion 81, and the guide rail 82 move the second cleaning body 181 horizontally. The control unit 200 controls the moving unit 71 and the arm 80 to perform a double-side cleaning process by synchronously moving the first cleaning body 171 in contact with the upper surface of the wafer W and the second cleaning body 181 in contact with the lower surface of the wafer W horizontally.

[0116] For example, the control unit 200 performs the following processing as a double-sided cleaning process, maintaining a state in which the contact surface between the first cleaning body 171 and the upper surface of the wafer W coincides with the contact surface between the second cleaning body 181 and the lower surface of the wafer W when the wafer W held on the rotating chuck 11 is viewed from above in the thickness direction of the wafer W, and while maintaining this state, the first cleaning body 171 and the second cleaning body 181 are moved horizontally.

[0117] Thus, for example, the force exerted by the first cleaning unit 17 on the wafer W by pressing down and the force exerted by the second cleaning unit 18 on the wafer W by lifting up can be offset against each other. This prevents warping of the wafer W and allows the pressing force of the first cleaning body 171 and the second cleaning unit 18 to be set high without being constrained by the suction force of the spin chuck 11. Therefore, according to the substrate processing apparatus 1 of the first embodiment, the wafer W can be cleaned powerfully using the first cleaning body 171 and the second cleaning body 181.

[0118] In addition, the substrate processing apparatus 1 further includes a first drive unit 173 for rotating the first cleaning body 171 about a vertical axis, and a second drive unit 183 for rotating the second cleaning body 181 about a vertical axis. The control unit 200 performs the following process as a double-side cleaning process: the first cleaning body 171 and the second cleaning body 181 are horizontally moved while the rotation center of the first cleaning body 171 driven by the first drive unit 173 and the rotation center of the second cleaning body 181 driven by the second drive unit 183 are aligned. This allows for more reliable suppression of warping of the wafer W than when the rotation centers of the first cleaning body 171 and the second cleaning body 181 are offset.

[0119] Furthermore, during the double-side cleaning process, the control unit 200 controls at least one of the moving unit 71 or the moving unit 81 to adjust the height position of at least one of the first cleaning body 171 and the second cleaning body 181 so that the pressing force of the first cleaning body 171 against the upper surface of the wafer W and the pressing force of the second cleaning body 181 against the lower surface of the wafer W are equal in magnitude. By setting the pressing force of the first cleaning body 171 against the upper surface of the wafer W and the pressing force of the second cleaning body 181 against the lower surface of the wafer W to be equal in magnitude, it is possible to suppress, for example, downward warping of the wafer W due to a higher pressing force of the first cleaning body 171 than the second cleaning body 181, or upward warping of the wafer W due to a higher pressing force of the second cleaning body 181 than the first cleaning body 171.

[0120] The substrate processing apparatus 1 further includes load detection units 75 and 85 for detecting the pressing force of the first cleaning body 171 against the upper surface of the wafer W or the pressing force of the second cleaning body 181 against the lower surface of the wafer W. Furthermore, the control unit 200 positions one of the first cleaning body 171 and the second cleaning body 181 at a predetermined height position and adjusts the height position of the other of the first cleaning body 171 and the second cleaning body 181 based on the detection results of the load detection units 75 and 85. This facilitates adjustment of the pressing force.

[0121] (Second embodiment)

[0122] In the first embodiment described above, the lower surface cleaning process (step S102) and the double-side cleaning process (step S103) are performed while the height of the upper cup 16 is kept constant. However, the height of the upper cup 16 may be changed during the lower surface cleaning process and the double-side cleaning process. Figure 22 and Figure 23 To illustrate the situation. Figure 22 1 is a diagram showing the height position of the upper cup 16 during the lower surface cleaning process. Figure 23 It is a figure which shows the height position of the upper cup 16 in the double-side washing process.

[0123] For example Figure 22 As shown, the substrate processing apparatus 1A according to the second embodiment includes a lifting mechanism 45 for lifting the support plate 14 independently of the upper cup 16. The lifting mechanism 45 includes, for example, support members 46 for supporting the support plate 14 and a drive unit 47 for lifting the support members 46.

[0124] In substrate processing apparatus 1A, during bottom surface cleaning, support plate 14 is raised using elevating mechanism 45, thereby setting the height position of upper cup 16 to H1. The height position of upper cup 16 refers to the height position of upper cup 16 relative to the top surface of wafer W held by suction on suction pad 10 or spin chuck 11. Height position H1 is a position that prevents pure water, etc., from flowing from the bottom surface of wafer W to the top surface.

[0125] Next, in the substrate processing apparatus 1A, after the height position of the upper cup 16 is set to H2, which is higher than H1, a double-side cleaning process is performed. Specifically, after the height position of the upper cup 16 is changed to H2, pure water is supplied from the cleaning nozzle 70a to the upper surface of the wafer W. Height position H2 is a height position that can suppress pure water and the like scattered from the rotating first cleaning body 171 from scattering outside the upper cup 16. The height position of the upper cup 16 can be changed, for example, by adjusting the height position of the spin chuck 11.

[0126] As such, the substrate processing apparatus 1A can also change the height position of the upper cup 16 with the wafer W as a reference at the time of the lower surface cleaning process and at the time of the both surface cleaning process. Thereby, it is possible to suppress, for example, the pure water and the like from going around the upper surface of the wafer W at the time of the lower surface cleaning process, and the pure water and the like from flying out of the upper cup 16 at the time of the both surface cleaning process.

[0127] (Third Embodiment)

[0128] In each of the above embodiments, an example in which the substrate processing apparatus 1, 1A is provided with the first cleaning section 17 and the second cleaning section 18 as cleaning tools has been described, but other cleaning tools can also be provided. With regard to this point, description will be made with reference to Figure 24 . Figure 24 a drawing for showing an example of other cleaning tools.

[0129] As Figure 24 shown, the substrate processing apparatus 1B related to the third embodiment can also be provided with, for example, a third cleaning section 30 that cleans the end portion of the wafer W using a cleaning body such as a brush or a sponge, a fourth cleaning section 31 that supplies a cleaning fluid toward the lower surface of the wafer W, a fifth cleaning section 32 that supplies a cleaning fluid toward the upper surface of the wafer W, and the like in addition to the first cleaning section 17 and the second cleaning section 18. The substrate processing apparatus 1B can select the most suitable tool from among these multiple cleaning tools according to the kind of the wafer W as an object to use.

[0130] For example, in the lower surface cleaning process, the fourth cleaning section 31 can also be used in addition to the second cleaning section 18 to clean the lower surface of the wafer W. Also, in the both surface cleaning process, the fifth cleaning section 32 can also be used in addition to the first cleaning section 17 to clean the upper surface of the wafer W. As such, by performing cleaning simultaneously using multiple kinds of cleaning tools, it is possible to shorten the cleaning time. Also, for example, it is possible to efficiently remove dirt and the like that float up due to the first cleaning body 171 or the second cleaning body 181 using the fourth cleaning section 31 or the fifth cleaning section 32. Also, it is possible to perform a rinsing process using the fourth cleaning section 31 and the fifth cleaning section 32 after the both surface cleaning process is finished, and then perform a drying process.

[0131] The fourth cleaning section 31 and the fifth cleaning section 32 are, for example, a two-fluid nozzle. The fourth cleaning section 31 and the fifth cleaning section 32 that are a two-fluid nozzle atomize a cleaning liquid and blow it to the wafer W. In addition, the fourth cleaning section 31 and the fifth cleaning section 32 are not limited to a two-fluid nozzle, and can be a general nozzle that ejects a cleaning liquid.

[0132] Further, the substrate processing apparatus 1B can also be provided with a plurality of first cleaning sections 17 having different removal performances. For example, in a case where a high removal performance is required, a first cleaning section 17 having a first cleaning body 171 with a high removal capacity can be used, or in a case where cleaning is performed without damaging the upper surface as much as possible, a first cleaning section 17 having a first cleaning body 171 that is soft can be used. Similarly, the substrate processing apparatus 1B can also be provided with a plurality of second cleaning sections 18 having different removal performances.

[0133] As such, the substrate processing apparatus 1B can also be provided with a cleaning tool other than the first cleaning section 17 and the second cleaning section 18.

[0134] (Fourth Embodiment)

[0135] In the above-described embodiments, the first cleaning body 171 and the second cleaning body 181 are caused to simultaneously clean both surfaces of the wafer W in synchronization with each other in the both-side cleaning process, but the cleaning tool that is synchronized with the second cleaning body 181 is not limited to the first cleaning body 171. This point will be described with reference to Figure 25 FIG. 10. Figure 25 FIG. 11 is a view for illustrating an example of an operation of a both-side cleaning process according to the fourth embodiment.

[0136] As Figure 25 indicated in FIG. 11, the substrate processing apparatus 1C according to the fourth embodiment is provided with, for example, the second cleaning section 18 and a fifth cleaning section 32 as cleaning tools. The fifth cleaning section 32 is a dual-fluid nozzle.

[0137] The substrate processing apparatus 1C according to the fourth embodiment performs a both-side cleaning process in synchronization with the second cleaning section 18 and the fifth cleaning section 32. Specifically, as in the case where the first cleaning body 171 and the second cleaning body 181 are synchronized with each other, as Figure 25 indicated in FIG. 11, in a case where the fifth cleaning section 32 reaches a position at which the spray position of the fifth cleaning section 32 and the contact surface of the second cleaning body 181 coincide with each other in plan view, the second cleaning body 181 is caused to rotate and horizontally move in the same direction (the positive direction of the X axis) at the same speed as the fifth cleaning section 32.

[0138] According to the substrate processing apparatus 1C of the fourth embodiment, the force exerted by the second cleaning section 18 on the wafer W, which is pressed down by the misted cleaning liquid supplied from the fifth cleaning section 32, can be used to reduce the force exerted by the second cleaning section 18 on the wafer W. Therefore, the pressing force of the second cleaning section 18 can be set high without causing the wafer W to warp and without being constrained by the suction force of the spin chuck 11. Furthermore, during double-sided cleaning using the second cleaning section 18 and the fifth cleaning section 32, it is desirable to set the height of the upper cup 16 higher than the height H1 during bottom-surface cleaning. This prevents the misted cleaning liquid supplied from the fifth cleaning section 32 from scattering outside the upper cup 16.

[0139] (Fifth embodiment)

[0140] In the fifth embodiment, referring to Figure 26 A process of cleaning both cleaning tools using a cleaning tool for cleaning the upper surface of wafer W and a cleaning tool for cleaning the lower surface of wafer W will be described. Figure 26 A diagram showing an example of tool cleaning operation.

[0141] For example Figure 26 As shown, the substrate processing apparatus 1D according to the fifth embodiment includes a first cleaning unit 17 and a second cleaning unit 18. When no wafer W is sucked and held by the suction pad 10 and the spin chuck 11, the substrate processing apparatus 1D performs a tool cleaning process, for example, after the unloading process (step S105) and before the next wafer W is loaded (step S101).

[0142] Specifically, the substrate processing apparatus 1D rotates the first cleaning body 171 and the second cleaning body 181 while the contact surface of the first cleaning body 171 with the wafer W is in contact with the contact surface of the second cleaning body 181 with the wafer W. Furthermore, the substrate processing apparatus 1D supplies pure water from the cleaning nozzle 70a toward the second cleaning body 181. This allows the contact surfaces of the first cleaning body 171 and the second cleaning body 181 to be cleaned simultaneously. At this time, the first cleaning body 171 rotates in a direction opposite to the rotation direction of the second cleaning body 181, thereby more effectively cleaning the contact surfaces of the first cleaning body 171 and the second cleaning body 181.

[0143] The tool cleaning process is not limited to the above-described example. For example, the substrate processing apparatus 1B according to the third embodiment may also perform a tool cleaning process by supplying a cleaning fluid from the fifth cleaning section 32 toward the contact surface of the second cleaning body 181. Furthermore, the substrate processing apparatus 1B may perform a tool cleaning process by supplying a cleaning fluid from the fourth cleaning section 31 toward the contact surface of the first cleaning body 171.

[0144] (Sixth embodiment)

[0145] In the above-mentioned embodiments, an example of partially synchronizing the first cleaning unit 17 and the second cleaning unit 18 in the double-side cleaning process has been described. However, the first cleaning unit 17 and the second cleaning unit 18 can also be completely synchronized. Figure 27 to Figure 30 To explain. Figure 27 It is a plan view showing the structure of a substrate processing apparatus according to a sixth embodiment. Figure 28 : is a longitudinal sectional view showing the structure of the substrate processing apparatus according to the sixth embodiment. Figure 29 and Figure 30 It is a diagram showing an operation example of the double-side cleaning process according to the sixth embodiment.

[0146] like Figure 27 and Figure 28 As shown, the substrate processing device 1E involved in the sixth embodiment includes: an annular holding portion 24, which has a plurality of holding portions 23 for holding the peripheral portion of the wafer W; an annular fixing portion 25, which is arranged concentrically with the holding portion 24 on the outer peripheral side of the holding portion 24; and an annular bearing 26, which is arranged between the holding portion 24 and the fixing portion 25.

[0147] The fixing portion 25 is fixed to, for example, the inner wall of the upper cup 16E. The holding portion 24 is rotatably supported by the fixing portion 25 via a bearing 26. The bearing 26 is, for example, a ball bearing.

[0148] The substrate processing apparatus 1E also includes a belt 27 stretched around the circumference of the holding portion 24 and a drive unit 28 that rotates the holding portion 24 via the belt 27. The belt 27 is led to the outside of the upper cup 16E through, for example, an opening 161 formed in a side surface of the upper cup 16E and is connected to the drive unit 28.

[0149] In addition, if Figure 27 As shown, the second cleaning unit 18 involved in the sixth embodiment is supported horizontally by an arm 80E. The arm 80E is connected to a moving unit 81E. The moving unit 81E moves the arm 80E horizontally along a guide rail 82E extending in a horizontal direction (here, the X-axis direction). In addition, the moving unit 81E raises and lowers the arm 80E in a vertical direction (the Z-axis direction).

[0150] The substrate processing apparatus 1E according to the sixth embodiment does not perform the lower surface cleaning process (step S102) after the loading process (step S101), but starts the double-surface cleaning process (step S103). Figure 29As shown, in the double-side cleaning process according to the sixth embodiment, the first cleaning body 171 is pressed against the center of the upper surface of the wafer W, and the second cleaning body 181 is pressed against the center of the lower surface of the wafer W. Subsequently, the driving unit 28 is used to rotate the holding unit 24, thereby rotating the wafer W. Furthermore, the first cleaning body 171 and the second cleaning body 181 are rotated. Alternatively, the first cleaning body 171 and the second cleaning body 181 may be pressed against the wafer W after the wafer W, the first cleaning body 171, and the second cleaning body 181 have been rotated.

[0151] Then, if Figure 30 As shown, the first cleaning body 171 and the second cleaning body 181 are moved horizontally at the same speed and in the same direction (positive direction of the X-axis) toward the outer periphery of the wafer W. As a result, the entire upper surface of the wafer W is cleaned by the first cleaning body 171, and the entire lower surface of the wafer W is cleaned by the second cleaning body 181.

[0152] As described above, in the substrate processing apparatus 1E according to the sixth embodiment, the spin chuck 11 is not located at the center of the lower surface of the wafer W. Therefore, the movement of the second cleaning body 181 can be started from the center of the lower surface of the wafer W. Therefore, according to the substrate processing apparatus 1E according to the sixth embodiment, the first cleaning body 171 and the second cleaning body 181 can be completely synchronized during double-side cleaning processing.

[0153] In addition, although the double-side cleaning process is started from the center of the wafer W here, the double-side cleaning process may also be started from one end (for example, the negative side in the X-axis direction) of the wafer W. That is, the first cleaning body 171 and the second cleaning body 181 may be moved from one end toward the other end of the wafer W at the same speed.

[0154] In addition, an example of a case where the holding portion 24 is rotated using a belt 27 is shown here, but the method of rotating the holding portion 24 is not limited to the above example. For example, a gear box can be used to rotate the holding portion 24. In addition, the following structure can also be used: a holding plate for holding the periphery of the wafer W, a shaft connected to the lower portion of the holding plate, and a driving portion for rotating the shaft, a through hole is provided that passes through the holding plate and the shaft from top to bottom, and an arm supporting the second cleaning body 181 is inserted through the through hole to arrange the second cleaning body 181 between the wafer W and the holding plate. According to this structure, the second cleaning body 181 can be moved from the central portion to the peripheral portion of the wafer W without interfering with the shaft.

[0155] (Seventh embodiment)

[0156] In the seventh embodiment, another configuration example of the first cleaning body 171 and the second cleaning body 181 will be described. Figure 31 to Figure 33] Another structural example of the second cleaning body 181 is shown in FIG. Figure 31 : is a perspective view showing the structure of the second cleaning body involved in the seventh embodiment. Figure 32 1 is a longitudinal sectional view showing the structure of the second cleaning body according to the seventh embodiment. Figure 33 FIG. 1 is a diagram showing a state where the second cleaning body according to the seventh embodiment is pressed against the wafer W. FIG.

[0157] Figure 31 The second cleaning body 181F according to the seventh embodiment shown here has a function as a polishing body for polishing the lower surface of the wafer W in addition to the function as a cleaning body.

[0158] Specifically, if Figure 31 As shown, the second cleaning body 181F has: a grinding member 50 having a grinding surface 50a made of, for example, foamed polyurethane, non-woven fabric, etc.; a cleaning member 51 made of, for example, a freely stretchable material such as polyvinyl alcohol, polypropylene, nylon, etc.; and a supporting member 52 that supports the grinding member 50 and the cleaning member 51. The grinding surface 50a of the grinding member 50 is formed by attaching a sheet made of foamed polyurethane, non-woven fabric to the upper surface of a ring-shaped member 50b that is formed into a roughly circular ring shape that is smaller than the diameter of the wafer W, for example, about one-quarter the diameter of the wafer W. In addition, Figure 31 In FIG. 1 , as an example of the shape of the polishing member 50 , eight arc-shaped polishing surfaces 50 a having a predetermined width are depicted as being concentrically arranged at predetermined intervals.

[0159] The cleaning member 51 is formed in a fan shape, for example, and a plurality of cleaning members 51 are arranged inside the annular polishing member 50 so as to form a concentric circle with the polishing member 50. Figure 31 , an example of a case where four cleaning members 51 formed in a fan shape are arranged inside the polishing member 50 is shown.

[0160] The surfaces of the polishing member 50 and the cleaning member 51 opposite to the support member 52 are the polishing surface 50a and the cleaning surface respectively provided facing the wafer W. Figure 32 As shown, the cleaning surface 51a of the cleaning member 51 is formed to protrude to a position above the grinding surface 50a of the grinding member 50. Therefore, when the second cleaning body 181F is brought close to the lower surface of the wafer W, the cleaning member 51 first contacts the lower surface of the wafer W. Moreover, the cleaning member 51 is made of a material that can be expanded and contracted. Therefore, after the cleaning member 51 contacts the wafer W, the second cleaning body 181F is pushed toward the wafer W. Figure 33 As shown, the cleaning member 51 is compressed so that the polishing member 50 also contacts the lower surface of the wafer W, and the polishing process of the wafer W can be performed.

[0161] Like this, the second cleaning body 181F can have the function of a grinding body. In this case, for example Figure 33 As shown, the lower surface of the wafer W can be polished by rotating the second cleaning body 181F while the polishing member 50 is in contact with the lower surface of the wafer W. Furthermore, after the second cleaning body 181F is slightly lowered, for example, so that only the cleaning member 51 is in contact with the lower surface of the wafer W, the second cleaning body 181F is rotated, thereby cleaning the lower surface of the wafer W.

[0162] (Eighth Embodiment)

[0163] Reference Figure 34 to Figure 36 The structure of a substrate processing apparatus including a cleaning body and a polishing unit separately in an eighth embodiment will be described. Figure 34 1 is a side view showing the structure of a substrate processing apparatus according to an eighth embodiment. Figure 35 and Figure 36 It is a top view showing the wafer W, the cleaning body, the polishing body, and the rotating plate.

[0164] like Figure 34 As shown, the substrate processing apparatus 1G according to the eighth embodiment includes: a rotating plate 101, which is formed of, for example, a circular plate and is a planar body disposed opposite to the wafer W held by the suction cup 10 or the spin chuck 11; and a cleaning body 6A and a grinding body 6B disposed on the rotating plate 101. The rotating plate 101 is configured to be freely rotatable around a vertical axis via a rotating shaft 102 disposed on its lower surface side by a driving mechanism 103. The rotating shaft 102 is disposed at the center of the rotating plate 101. Therefore, when viewed from above, the center of the rotating plate 101 coincides with the center of the rotating shaft 102, and this center becomes the rotation center O1. In this example, the rotating plate 101, the rotating shaft 102, and the driving mechanism 103 form a rotation mechanism.

[0165] like Figure 35 As shown, the rotating plate 101 is configured such that its radius r1 is smaller than the radius r2 of the wafer W. Furthermore, when cleaning the area including the central portion of the lower surface of the wafer W, the wafer W is held on the suction cup 10 and moved horizontally, with the rotation axis 102 disposed within the movement area of ​​the wafer W. That is, when cleaning the area including the central portion of the lower surface of the wafer W, the rotation axis 102 is configured to overlap with the wafer W. Furthermore, the configuration is such that, when viewed from above, the rotation axis 102 of the rotating plate 101 and the axis 20 of the rotary chuck 11 are aligned in the horizontal direction (X-axis direction).

[0166] The cleaning body 6A and the grinding body 6B are composed of cylindrical brushes, for example, and are connected to driving mechanisms 112A and 112B via driving shafts 111A and 111B. The driving mechanisms 112A and 112B are provided on the rotating plate 101 to move the cleaning body 6A and the grinding body 6B upward and downward and to rotate them about a vertical axis.

[0167] Cleaning body 6A and grinding body 6B are arranged on rotating plate 101 so as to be separated from each other in the horizontal direction. Furthermore, cleaning body 6A and grinding body 6B are arranged so that when wafer W is held and rotated by rotary chuck 11, cleaning body 6A and grinding body 6B rotate in one direction, thereby enabling cleaning body 6A and grinding body 6B to clean and grind all areas of the lower surface of wafer W except the central portion. Rotation in one direction means that cleaning body 6A, which is located on one side (in this example, the left side) of the rotating plate 101, rotates toward the other side (in this example, the right side) when viewing axis 20 of rotary chuck 11 from rotation axis 102 of rotating plate 101.

[0168] In this example, the configuration is such that, when viewed from above, when cleaning body 6A is at the center, grinding body 6B is located at the periphery of wafer W held on spin chuck 11, and when grinding body 6B is at the center, cleaning body 6A is located at the periphery. "Location at the periphery" means that cleaning body 6A and grinding body 6B are positioned so as to be able to clean (grind) the outer edge of wafer W held on spin chuck 11, and "location at the center" means that cleaning body 6A and grinding body 6B are positioned so as to be able to clean (grind) the outer edge of wafer W held on spin chuck 11. "Location at the center" means that cleaning body 6A and grinding body 6B are positioned so as to be able to clean (grind) wafer W on straight line L connecting rotation center O2 and rotation center O1 of spin chuck 11. Figure 35 Indicates the state where the cleaning body 6A is at the periphery and the grinding body 6B is at the center. Figure 36 The cleaning body 6A is shown in the center and the grinding body 6B is shown in the periphery.

[0169] When the cleaning body 6A, positioned on the left side, begins to rotate rightward, the grinding body 6B is positioned on the straight line L connecting the rotation axis 102 of the rotating plate 101 and the axis 20 of the rotary chuck 11. When the rotation is complete, the cleaning body 6A is positioned on the straight line L. Furthermore, because the radius r1 of the rotating plate 101 is shorter than the radius r2 of the wafer W, the rotation radius of the cleaning body 6A and the grinding body 6B is shorter than the radius r2 of the wafer W. The rotation radius refers to the length of the line connecting the center of the cleaning body 6A and the rotation center O1 of the rotating plate 101, and the length of the line connecting the center of the grinding body 6B and the rotation center O1 of the rotating plate 101.

[0170] As described above, the cleaning body 6A and the polishing body 6B are not limited to being provided integrally as in the second cleaning body 181F according to the seventh embodiment, but may be provided separately.

[0171] (Ninth embodiment)

[0172] Next, refer to Figure 37 to Figure 39 The ninth embodiment will be described. Figure 37 A configuration example of a substrate processing apparatus according to a ninth embodiment will be described. Figure 37 It is a plan view showing the structure of a substrate processing apparatus according to a ninth embodiment.

[0173] like Figure 37 As shown, the substrate processing apparatus 1H according to the ninth embodiment includes a first cleaning unit 17H.

[0174] The first cleaning unit 17H includes a first cleaning body 171H. The first cleaning body 171H is, for example, a two-fluid nozzle. The first cleaning body 171H mixes gas supplied from a gas supply source (not shown) with liquid supplied from a liquid supply source (not shown), thereby spraying a mixed fluid of gas and liquid onto the upper surface of the wafer W. The gas supplied from the gas supply source is, for example, an inert gas such as nitrogen. The liquid supplied from the liquid supply source is, for example, pure water.

[0175] The first cleaning unit 17H is supported horizontally by an arm 70H, and the arm 70H is connected to a moving unit 71H. The moving unit 71H moves the arm 70H horizontally along a guide rail 72H extending in a horizontal direction (here, the Y-axis direction).

[0176] In the substrate processing apparatus 1H according to the ninth embodiment, the arm 80 supporting the second cleaning unit 18 is connected to a rotating unit 81H, which rotates the arm 80 about a vertical axis. Furthermore, the substrate processing apparatus 1H can be configured to include a moving unit 81 for horizontally moving the arm 80, similar to the substrate processing apparatus 1 according to the first embodiment.

[0177] Next, refer to Figure 38 The lower surface cleaning process in the ninth embodiment will be described. Figure 38 It is a diagram showing an operation example of the lower surface cleaning process in the ninth embodiment.

[0178] like Figure 38 As shown, in the ninth embodiment, by the suction cup 10 (refer to Figure 37 The second cleaning unit 18 cleans the lower surface of the wafer W by combining movement of the wafer W by the control unit 200H and rotation of the second cleaning unit 18 by the rotation unit 81H. Specifically, the control unit 200H rotates the second cleaning unit 181 and repeats rotational movement in one direction (e.g., the positive Y-axis direction) and in the other direction (e.g., the negative Y-axis direction) a predetermined number of times. Furthermore, the control unit 200H moves the wafer W in the negative X-axis direction via the chuck 10. Thus, the central area A is cleaned by the second cleaning unit 181.

[0179] Next, refer to Figure 39 The double-side cleaning process according to the ninth embodiment will be described. Figure 39 3. A diagram showing an operation example of double-side cleaning processing in the ninth embodiment.

[0180] like Figure 39 As shown, the control unit 200H moves the first cleaning body 171H and the second cleaning body 181 horizontally in a direction in which the first cleaning body 171H and the second cleaning body 181 are separated from each other during the double-side cleaning process.

[0181] If the spraying position of the first cleaning body 171H and the rotation center of the second cleaning body 181 do not coincide when viewed from above, and if the distance between the first cleaning body 171H and the second cleaning body 181 is close, there is a risk that the second cleaning body 181 will not be able to properly clean the lower surface of the wafer W. This is because the pressure of the mixed fluid sprayed from the first cleaning body 171H causes the wafer W to warp, causing it to partially float from the second cleaning body 181. Therefore, if the spraying position of the first cleaning body 171H and the rotation center of the second cleaning body 181 do not coincide when viewed from above, it is best to separate the first cleaning body 171H and the second cleaning body 181 as much as possible.

[0182] Therefore, in the ninth embodiment, during double-side cleaning, the first cleaning body 171H and the second cleaning body 181 are horizontally moved in a direction separating the first cleaning body 171H and the second cleaning body 181. This prevents the first cleaning body 171H and the second cleaning body 181 from coming into close proximity, thereby preventing the wafer W from partially floating off the second cleaning body 181 due to warping of the wafer W caused by the pressure of the mixed fluid. Consequently, the second cleaning body 181 can be used to properly clean the lower surface of the wafer W, enabling the second cleaning body 181 to be used for strong cleaning of the wafer W.

[0183] Specifically, the control unit 200H first rotates the wafer W by rotating the rotary chuck 11. In addition, the control unit 200H arranges the second cleaning body 181 at a position that is radially inward of the outer periphery of the wafer W and shifted to the side of the movement direction (here, the negative direction of the Y axis) of the first cleaning body 171H described later relative to the center of the wafer W. In addition, this position can be the position of the second cleaning body 181 at the end of the above-mentioned lower surface cleaning process. Afterwards, the control unit 200H starts to supply pure water from the cleaning nozzle 80a to the lower surface of the wafer W while the second cleaning body 181 is in contact with the lower surface of the wafer W, and rotates the second cleaning body 181.

[0184] Next, the control unit 200H controls the rotating unit 81H to rotate and move the second cleaning body 181 to the outer periphery of the wafer W at a position shifted to the opposite side of the movement direction of the first cleaning body 171H (here, the positive Y-axis direction) relative to the center of the wafer W. When the second cleaning body 181 reaches the outer periphery of the wafer W, the control unit 200H stops the rotation of the second cleaning body 181 by the rotating unit 81H, and rotates the second cleaning body 181 at that position for a predetermined time.

[0185] Furthermore, the control unit 200H controls the moving unit 71H to position the first cleaning body 171H above the center of the wafer W, and to eject the mixed fluid from the first cleaning body 171H toward the center of the upper surface of the wafer W. Furthermore, the control unit 200H controls the moving unit 71H at a timing after the second cleaning body 181 has moved to a position at least to the side of the center of the wafer W opposite to the direction of movement of the first cleaning body 171H (here, the positive Y-axis side), thereby moving the first cleaning body 171H to the outer periphery of the center of the wafer W in the negative Y-axis direction. This allows for double-side cleaning processing to be performed without the first cleaning body 171H and the second cleaning body 181 being in close proximity.

[0186] As described above, the substrate processing apparatus 1H according to the ninth embodiment includes a holding portion (for example, a rotary chuck 11), a first cleaning body 171H, a first moving mechanism (for example, an arm 70H, a moving portion 71H, and a guide rail 72H), a second cleaning body 181, a second moving mechanism (for example, an arm 80 and a rotating portion 81H), and a control portion 200H. The holding portion holds a substrate (for example, a wafer W). The first cleaning body 171H sprays a fluid (for example, a mixed fluid) onto one of the upper and lower surfaces of the substrate held by the holding portion (for example, the upper surface), thereby cleaning one surface. The first moving mechanism moves the first cleaning body 171H horizontally. The second cleaning body 181 contacts the other of the upper and lower surfaces of the substrate held by the holding portion (for example, the lower surface) to clean the other surface. The second moving mechanism moves the second cleaning body 181 horizontally. The control unit 200H controls the first moving mechanism and the second moving mechanism to perform a double-surface cleaning process by horizontally moving the first cleaning body 171H that ejects fluid onto one surface synchronously with the second cleaning body that contacts the lower surface.

[0187] Specifically, the control unit 200H controls the first moving mechanism and the second moving mechanism during the double-side cleaning process to horizontally move the first cleaning body 171H and the second cleaning body 181 in a direction in which the first cleaning body 171H and the second cleaning body 181 are separated from each other.

[0188] Therefore, according to the substrate processing apparatus 1H according to the ninth embodiment, the wafer W is less susceptible to the influence of warpage caused by the pressure of the mixed fluid, and thus the wafer W can be cleaned strongly using the second cleaning body 181 .

[0189] In addition, an example is shown here in which the upper surface of wafer W is cleaned using the first cleaning body 171H and the lower surface of wafer W is cleaned using the second cleaning body 181, but the lower surface of wafer W can also be cleaned using the first cleaning body 171H and the upper surface of wafer W can also be cleaned using the second cleaning body 181.

[0190] In addition, although the example shown here shows the case where the first cleaning body 171H is moved toward the negative Y-axis direction, the movement direction of the first cleaning body 171H is not limited to this. For example, the first cleaning body 171H may be moved toward the positive Y-axis direction. In this case, the control unit 200H can simply move the second cleaning body 181 from a position shifted toward the positive Y-axis direction relative to the center of the wafer W to the outer periphery of the wafer W shifted toward the negative Y-axis direction relative to the center of the wafer W.

[0191] In addition, although the example in which the first cleaning body 171H is a two-fluid nozzle that ejects a mixed fluid of gas and liquid is shown here, the first cleaning body 171H only needs to supply fluid to the wafer W and does not necessarily need to be a two-fluid nozzle.

[0192] (Variation)

[0193] In the above embodiment, the second cleaning body 181 is stopped from the start of the double-side cleaning process until the first cleaning body 171 and the second cleaning body 181 are synchronized, that is, while the first cleaning body 171 is cleaning the center of the wafer W. However, the present invention is not limited to this, and the second cleaning body 181 may be used to clean the lower surface of the wafer W while the first cleaning body 171 is cleaning the center of the wafer W.

[0194] In the above embodiment, the first cleaning body 171 and the second cleaning body 181 are rotated in the same direction as the wafer W, but the first cleaning body 171 and the second cleaning body 181 may be rotated in opposite directions to the wafer W. In the above embodiment, the first cleaning body 171 and the second cleaning body 181 are rotated in the same direction, but the first cleaning body 171 and the second cleaning body 181 may be rotated in opposite directions. The rotation speed of the first cleaning body 171 and the second cleaning body 181 may be the same as the rotation speed of the wafer W, slower than the rotation speed of the wafer W, or faster than the rotation speed of the wafer W. Furthermore, the first cleaning body 171 and the second cleaning body 181 do not necessarily need to rotate.

[0195] In addition, in the above-mentioned embodiment, the first cleaning body 171 and the second cleaning body 181 are linearly moved along the guide rails 72 and 82, but for example, the first cleaning body 171 can be supported by a first rotating arm that rotates around a vertical axis, and the second cleaning body 181 can be supported by a second rotating arm that rotates around a vertical axis, thereby moving the first cleaning body 171 and the second cleaning body 181 in an arc shape. In this case, by aligning the positions of the rotation centers of the first rotating arm and the second rotating arm, the movement of the first cleaning body 171 and the second cleaning body 181 can be synchronized.

[0196] Furthermore, in the above-described embodiment, an example of a case where both sides are cleaned is described. However, depending on the type of wafer W, for example, only the bottom surface cleaning process may be performed. When only the bottom surface cleaning process is performed instead of both sides, pure water or the like is prevented from bypassing the top surface of the wafer W. Therefore, the rotation speed of the wafer W can be lowered compared to the case where both sides are cleaned. Alternatively, only the top surface of the wafer W may be cleaned instead of both sides.

[0197] Here, the double-sided cleaning process of wafer W is not limited to cleaning the circuit-forming side and the non-circuit-forming side. For example, it can be a component formed by attaching at least one side of wafer W to the circuit-forming side. In this case, there are protective components for protecting the circuit or bonded wafers formed by bonding two wafers together. Alternatively, it can be a wafer W before circuit formation.

[0198] Further effects and modifications can be readily derived by those skilled in the art. Therefore, the broader aspects of the present invention are not limited to the specific details and representative embodiments described above. Therefore, various modifications can be made without departing from the spirit or scope of the general inventive concept defined by the appended claims and their equivalents.

Claims

1. A substrate processing apparatus comprising: a holding portion that holds the substrate horizontally; a first cleaning body that contacts one of the upper surface and the lower surface of the substrate held by the holding portion to clean the one surface; a first moving mechanism, which moves the first cleaning body horizontally; a second cleaning body that contacts the other of the upper surface and the lower surface of the substrate held by the holding portion to clean the other surface; a second moving mechanism that moves the second cleaning body horizontally; and a control unit that controls the first moving mechanism and the second moving mechanism to perform a double-surface cleaning process by synchronously moving the first cleaning body in contact with the one surface and the second cleaning body in contact with the other surface horizontally; The control unit controls the first moving mechanism and the second moving mechanism to horizontally move the first cleaning body and the second cleaning body so as to maintain a state in which the first cleaning body in contact with the one surface overlaps with the second cleaning body in contact with the other surface. The first cleaning body contacts the upper surface of the substrate to clean the upper surface. The second cleaning body contacts the lower surface of the substrate to clean the lower surface. The control unit performs the following processing as the double-side cleaning processing, the processing being: maintaining a state in which a contact surface between the first cleaning body and the upper surface and a contact surface between the second cleaning body and the lower surface coincide with each other when the substrate held on the holding unit is viewed from above in the thickness direction of the substrate, and horizontally moving the first cleaning body and the second cleaning body while maintaining this state; The first moving mechanism enables the first cleaning body to be raised and lowered. The second moving mechanism enables the second cleaning body to be raised and lowered. The substrate processing apparatus further includes a load detection unit configured to detect a pressing force of the first cleaning body against the upper surface or a pressing force of the second cleaning body against the lower surface. The control unit arranges one of the first cleaning body and the second cleaning body at a predetermined height position, and adjusts the height position of the other of the first cleaning body and the second cleaning body based on the detection result of the load detection unit, so that while the first cleaning body and the second cleaning body are moved horizontally synchronously, the pushing force of the first cleaning body on the upper surface and the pushing force of the second cleaning body on the lower surface are the same size.

2. The substrate processing apparatus according to claim 1, wherein: One of the upper surface and the lower surface is a circuit forming surface, The contact surface of one of the first cleaning element and the second cleaning element that contacts the circuit formation surface with the substrate is larger than the contact surface of the other cleaning element with the substrate.

3. The substrate processing apparatus according to claim 1, wherein: One of the upper surface and the lower surface is a circuit forming surface, One of the first cleaning element and the second cleaning element that contacts the circuit-formed surface is softer than the other cleaning element.

4. The substrate processing apparatus according to claim 1, wherein: The holding portion includes: a rotatable first holding portion configured to suck and hold a first region including a central portion of the lower surface of the substrate; and a second holding portion configured to suction-hold a second region of the lower surface of the substrate other than the first region; After performing the lower surface cleaning process, the control unit causes the second cleaning body to contact the second area to perform the two-side cleaning process while the substrate is held by adsorption by the first holding unit and rotated. In the lower surface cleaning process, while the substrate is held by adsorption by the second holding unit, the control unit controls the second moving mechanism to cause the second cleaning body to contact the first area and move horizontally in the first area.

5. A substrate processing apparatus comprising: a holding portion that holds the substrate horizontally; a first cleaning body that contacts one of the upper surface and the lower surface of the substrate held by the holding portion to clean the one surface; a first moving mechanism, which moves the first cleaning body horizontally; a second cleaning body that contacts the other of the upper surface and the lower surface of the substrate held by the holding portion to clean the other surface; a second moving mechanism, which moves the second cleaning body horizontally; a control unit that controls the first moving mechanism and the second moving mechanism to perform a double-surface cleaning process by synchronously moving the first cleaning body in contact with the one surface and the second cleaning body in contact with the other surface horizontally; a first driving unit for rotating the first cleaning body around a vertical axis; as well as a second driving unit, which rotates the second cleaning body around a vertical axis; The control unit controls the first moving mechanism and the second moving mechanism to horizontally move the first cleaning body and the second cleaning body so as to maintain a state in which the first cleaning body in contact with the one surface overlaps with the second cleaning body in contact with the other surface. The first cleaning body contacts the upper surface of the substrate to clean the upper surface. The second cleaning body contacts the lower surface of the substrate to clean the lower surface. The control unit performs the following processing as the double-side cleaning processing, the processing being: horizontally moving the first cleaning body and the second cleaning body in a state where the rotation center of the first cleaning body driven by the first driving unit is aligned with the rotation center of the second cleaning body driven by the second driving unit, The first moving mechanism enables the first cleaning body to be raised and lowered. The second moving mechanism enables the second cleaning body to be raised and lowered. The substrate processing apparatus further includes a load detection unit configured to detect a pressing force of the first cleaning body against the upper surface or a pressing force of the second cleaning body against the lower surface. The control unit arranges one of the first cleaning body and the second cleaning body at a predetermined height position, and adjusts the height position of the other of the first cleaning body and the second cleaning body based on the detection result of the load detection unit, so that while the first cleaning body and the second cleaning body are moved horizontally synchronously, the pushing force of the first cleaning body on the upper surface and the pushing force of the second cleaning body on the lower surface are the same size.

6. The substrate processing apparatus according to claim 5, wherein: One of the upper surface and the lower surface is a circuit forming surface, The contact surface of one of the first cleaning element and the second cleaning element that contacts the circuit formation surface with the substrate is larger than the contact surface of the other cleaning element with the substrate.

7. The substrate processing apparatus according to claim 5, wherein: One of the upper surface and the lower surface is a circuit forming surface, One of the first cleaning element and the second cleaning element that contacts the circuit-formed surface is softer than the other cleaning element.

8. The substrate processing apparatus according to claim 5, wherein: The holding portion includes: a rotatable first holding portion configured to suck and hold a first region including a central portion of the lower surface of the substrate; and a second holding portion configured to suction-hold a second region of the lower surface of the substrate other than the first region; After performing the lower surface cleaning process, the control unit causes the second cleaning body to contact the second area to perform the two-side cleaning process while the substrate is held by adsorption by the first holding unit and rotated. In the lower surface cleaning process, while the substrate is held by adsorption by the second holding unit, the control unit controls the second moving mechanism to cause the second cleaning body to contact the first area and move horizontally in the first area.

9. A substrate processing method, comprising: a holding step in which the substrate is held horizontally; as well as A two-side cleaning process is a process in which a first cleaning body that contacts one of the upper and lower surfaces of the substrate to clean the one surface is in contact with the one surface, and a second cleaning body that contacts the other of the upper and lower surfaces of the substrate to clean the other surface is in contact with the other surface, and the first cleaning body and the second cleaning body are synchronously moved horizontally, thereby cleaning the upper and lower surfaces. In the double-side cleaning step, the first cleaning body and the second cleaning body are horizontally moved so as to maintain the first cleaning body in contact with the one surface and the second cleaning body in contact with the other surface in an overlapping state. In the double-sided cleaning process, bringing the first cleaning body into contact with the upper surface of the substrate to clean the upper surface, bringing the second cleaning body into contact with the lower surface of the substrate to clean the lower surface, The first cleaning body and the second cleaning body are moved horizontally while maintaining a state in which a contact surface between the first cleaning body and the upper surface and a contact surface between the second cleaning body and the lower surface overlap when the held substrate is viewed from above in the thickness direction of the substrate. The first cleaning body can be raised and lowered. The second cleaning body can be raised and lowered. The substrate processing method further includes: a detection step, in which the pushing force of the first cleaning body against the upper surface or the pushing force of the second cleaning body against the lower surface is detected, An adjustment process, in which one of the first cleaning body and the second cleaning body is arranged at a predetermined height position, and the height position of the other of the first cleaning body and the second cleaning body is adjusted based on the detection result of the detection process so that while the first cleaning body and the second cleaning body are moved horizontally synchronously, the pushing force of the first cleaning body on the upper surface and the pushing force of the second cleaning body on the lower surface are the same size.

10. A substrate processing method, comprising: a holding step in which the substrate is held horizontally; as well as A two-side cleaning process is a process in which a first cleaning body that contacts one of the upper and lower surfaces of the substrate to clean the one surface is in contact with the one surface, and a second cleaning body that contacts the other of the upper and lower surfaces of the substrate to clean the other surface is in contact with the other surface, and the first cleaning body and the second cleaning body are synchronously moved horizontally, thereby cleaning the upper and lower surfaces. In the double-side cleaning step, the first cleaning body and the second cleaning body are horizontally moved so as to maintain the first cleaning body in contact with the one surface and the second cleaning body in contact with the other surface in an overlapping state. In the double-sided cleaning process, bringing the first cleaning body into contact with the upper surface of the substrate to clean the upper surface, bringing the second cleaning body into contact with the lower surface of the substrate to clean the lower surface, The first cleaning body and the second cleaning body are horizontally moved in a state where the rotation center of the first cleaning body rotating around the vertical axis is aligned with the rotation center of the second cleaning body rotating around the vertical axis. The first cleaning body can be raised and lowered. The second cleaning body can be raised and lowered. The substrate processing method further includes: a detection step, in which the pushing force of the first cleaning body against the upper surface or the pushing force of the second cleaning body against the lower surface is detected, An adjustment process, in which one of the first cleaning body and the second cleaning body is arranged at a predetermined height position, and the height position of the other of the first cleaning body and the second cleaning body is adjusted based on the detection result of the detection process so that while the first cleaning body and the second cleaning body are moved horizontally synchronously, the pushing force of the first cleaning body on the upper surface and the pushing force of the second cleaning body on the lower surface are the same size.

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