A device and method for measuring vacuum degree

Abstract

The present application discloses a device for measuring vacuum degree and a method for measuring vacuum degree, the device comprising: a power supply, an ammeter, an electrode, a semiconductor film material and a substrate; the positive and negative electrodes of the power supply are connected to the electrode through a wire; the ammeter is installed between the power supply and the electrode; the electrode is connected to the semiconductor film material; the semiconductor film material is deposited on the substrate. The device of the present application can obtain the resistance of the semiconductor film material through the voltage provided by the power supply and the current measured by the ammeter. The resistance of the semiconductor film material in the device for measuring vacuum degree of the present application presents a quasi-linear relationship with the vacuum degree of the device, so that a larger range of vacuum degrees can be measured by measuring the resistance of the semiconductor film material, so as to solve the defect that the same measuring device or the same measuring method in the prior art cannot measure high vacuum and low vacuum at the same time.

Description

Technical Field

[0001] The present application relates to the field of vacuum degree detection, and in particular to a device for measuring vacuum degree, and also to a method for measuring vacuum degree. Background Art

[0002] Vacuum degree refers to the rarefaction of gas in a vacuum state. Vacuum degree can be roughly divided into ultra-high vacuum (<1×10 - 5 Pa), high vacuum (1×10 -5 ~1×10 -1 Pa) and low vacuum (1×10 -1 ~1×10 5 Pa) range. Ultra-high vacuum is mainly used for: surface science, electron-positron collider, nuclear fusion of deuterium and tritium, etc. High vacuum is mainly used for: semiconductor industry; atomic energy industry; metal materials industry; electronic and electrical industry; automobile industry; medical field and molecular atomic layer evaporation, etc. Low vacuum is mainly used for: general vacuum drying and distillation; vacuum freeze-drying, vacuum concentration, degassing, vacuum packaging in the food industry; providing fore vacuum for high vacuum, etc. Different vacuum degrees have different application fields and functions, and different vacuum degrees are divided according to the above numerical range. In some applications, such as the preparation of semiconductor materials, high vacuum means less impurity gas in the space, and the impurity content of the prepared semiconductor material is less. By controlling the vacuum degree, controllable doping of semiconductor materials can be achieved. Generally speaking, the performance of semiconductor materials with fewer impurities is better. Therefore, the method of detecting the vacuum value is becoming more and more important.

[0003] The existing methods for measuring vacuum are generally divided into low vacuum and high vacuum. Different vacuum degrees require different vacuum gauges to measure. Limited by the measurement method, the vacuum pressure range that can be measured by a general low vacuum gauge is approximately: 1×10 -1 ~2×10 2 Pa. Air pressure is greater than 2×10 2 Pa or less than 1×10 -1 Pa, low vacuum gauges cannot measure. Similarly, high vacuum gauges that detect high vacuum cannot measure low vacuum. Taking the hot cathode ionization vacuum gauge that detects high vacuum as an example, the vacuum degree is greater than 1×10 -1 The device cannot measure when the vacuum degree is low, mainly because the air pressure is high when the vacuum degree is low, and the oxygen content in the atmosphere is high. If the hot cathode ionization vacuum gauge is turned on at this time, it is easy to burn out the hot cathode ionization vacuum gauge. Therefore, the same measuring device and method cannot measure high vacuum and low vacuum at the same time. Summary of the invention

[0004] The present application provides a device for measuring vacuum degree to solve the problem that the same measuring device in the prior art cannot measure high vacuum degree and low vacuum degree at the same time. The present application also provides a method for measuring vacuum degree to solve the problem that the same measuring method in the prior art cannot measure high vacuum degree and low vacuum degree at the same time.

[0005] The present application provides a device for measuring vacuum degree, comprising: a power supply, an ammeter, an electrode, a semiconductor thin film material and a substrate;

[0006] The positive and negative electrodes of the power supply are connected to the electrodes through wires; the ammeter is installed between the power supply and the electrodes;

[0007] The electrode is connected to the semiconductor thin film material;

[0008] The semiconductor thin film material is deposited on the substrate.

[0009] Optionally, the electrode includes a positive electrode and a negative electrode; the positive electrode and the negative electrode are both bonded to the semiconductor thin film material.

[0010] Optionally, the electrode is connected to the wire by at least one of elastic pressure pin, soldering, silver paste welding and ultrasonic pressure welding.

[0011] Optionally, the electrode includes at least one of the following: aluminum, gold, copper, silver, and indium.

[0012] Optionally, the substrate is an insulating material, and the substrate includes at least one of the following: glass, ceramic.

[0013] Optionally, the semiconductor thin film material is deposited on the substrate by at least one of plasma enhanced chemical vapor deposition, magnetron sputtering, vacuum thermal evaporation, electron beam evaporation, and spin coating.

[0014] Optionally, the semiconductor thin film material includes:

[0015] At least one of hydrogen-doped amorphous silicon, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium; or,

[0016] At least one of copper indium gallium selenide and cadmium telluride intrinsic semiconductor thin film materials; or,

[0017] At least one of n-type or p-type amorphous silicon, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium semiconductor thin film materials doped with boron, phosphorus, arsenic, hydrogen, and carbon; or

[0018] At least one of the transparent conductive oxide thin film materials of indium tin oxide, tin oxide, zinc oxide doped with aluminum, antimony or fluorine.

[0019] The present application also provides a method for measuring vacuum degree, including:

[0020] In the vacuum range of 4 to 882 Pa and in darkroom conditions, randomly select points to obtain the resistance value of the semiconductor film material used to measure the vacuum degree;

[0021] Obtaining vacuum degree values ​​corresponding to the different resistance values;

[0022] Obtaining a quasi-linear relationship diagram between the resistance value and the vacuum degree value;

[0023] Extending the quasi-linear relationship graph, we get 10 -5 ~10 5 Quasi-linear relationship diagram between resistance value and vacuum value within the vacuum range of Pa;

[0024] According to the 10 -5 ~10 5 Quasi-linear relationship diagram between resistance value and vacuum value within the vacuum range of Pa, and the resistance value of semiconductor thin film material to obtain vacuum degree.

[0025] Optional, also includes: judgment 10 -5 ~10 5 Whether the resistance value and vacuum value within the vacuum range of Pa conform to the quasi-linear relationship;

[0026] The judgment includes:

[0027] By the 10 -5 ~10 5 The quasi-linear relationship between the resistance value and the vacuum value within the vacuum range of Pa is shown in the figure. 5 Pa and 10 -5 Within the vacuum range of 100 to 4 Pa, different resistance values ​​are randomly selected to obtain a first vacuum value corresponding to the selected resistance value;

[0028] In practice, measuring a second vacuum degree value corresponding to the selected resistance value;

[0029] Compare the second vacuum value with the first vacuum value, if the first vacuum value is within the threshold range of the second vacuum value, then -5 ~10 5 Within the vacuum degree range of Pa, the resistance value of the semiconductor thin film material of the device for measuring the vacuum degree and the vacuum degree of the device for measuring the vacuum degree are in a quasi-linear relationship.

[0030] Compared with the prior art, this application has the following advantages:

[0031] The present application discloses a device for measuring vacuum degree, comprising: a power supply, an ammeter, an electrode, a semiconductor film material and a substrate; the positive and negative electrodes of the power supply are connected to the electrode through a wire; the ammeter is installed between the power supply and the electrode; the electrode is connected to the semiconductor film material; the semiconductor film material is deposited on the substrate. The device of the present application can obtain the resistance of the semiconductor film material through the voltage provided by the power supply and the current measured by the ammeter, and the resistance of the semiconductor film material of the device for measuring vacuum degree of the present application presents a quasi-linear relationship with the vacuum degree of the device, so that a larger range of vacuum degrees can be measured by measuring the resistance of the semiconductor film material, so as to solve the problem that the same measuring device in the prior art cannot measure high vacuum and low vacuum at the same time.

[0032] In a further solution of the present application, the semiconductor film material is: at least one of hydrogen-doped amorphous silicon, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium; or at least one of copper indium gallium selenide and cadmium telluride intrinsic semiconductor film materials; or at least one of n-type or p-type amorphous silicon, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium semiconductor film materials doped with boron, phosphorus, arsenic, hydrogen, and carbon; or at least one of indium tin oxide, tin oxide, and zinc oxide transparent conductive oxide film materials doped with aluminum, antimony, or fluorine. Using one of the above semiconductor materials as the resistance material of the measuring device of the application can make the vacuum degree (from low vacuum degree to high vacuum degree) measured by the device present a quasi-linear relationship with the corresponding resistance value. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 This is a schematic diagram of the structure of the device for measuring vacuum degree provided in Example 1 of the present application.

[0034] Figure 2 This is a graph showing the relationship between the resistance of the intrinsic amorphous silicon thin film material and the degree of vacuum provided in Example 1 of the present application.

[0035] Figure 3 This is an extended diagram of the relationship diagram of the change in resistance of the intrinsic amorphous silicon thin film material with the vacuum degree provided in Example 1 of the present application.

[0036] Figure 4 A flow chart of a method for measuring vacuum degree provided in Example 2 of the present application. DETAILED DESCRIPTION

[0037] Many specific details are described in the following description to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar generalizations without violating the connotation of the present application, so the present application is not limited by the specific implementation disclosed below.

[0038] The present application provides a device for measuring vacuum degree and a method for measuring vacuum degree. The structure and working principle of the device for measuring vacuum degree and the method for measuring vacuum degree of the present application are described below using specific embodiments.

[0039] Embodiment 1 of the present application provides a device for measuring vacuum degree, such as Figure 1 , which is a schematic diagram of the structure of the device for measuring vacuum degree provided in this embodiment, the device for measuring vacuum degree comprises: a power supply 101, an ammeter 102, an electrode 103, a semiconductor film material 104, and a substrate 105. The device of this embodiment mainly utilizes the principle that the semiconductor film material has different resistance values ​​under different vacuum conditions, and then indirectly measures the vacuum degree by obtaining the resistance value.

[0040] like Figure 1 As shown, the positive and negative electrodes of the power supply 101 are connected to the electrode 103 through wires respectively; the electrode 103 mentioned above includes a positive electrode and a negative electrode; the positive electrode and the negative electrode of the electrode 103 are respectively connected to the positive and negative electrodes of the power supply 101. Specifically, in actual operation, the electrode 103 can be connected and fixed to the wire by elastic pressure needle, soldering, silver paste welding or ultrasonic pressure welding. In addition, the ammeter 102 is installed between the power supply 101 and the electrode 103, that is, the ammeter 102 is installed on the wire between the power supply 101 and the electrode 103.

[0041] One end of the electrode 103 is connected to the power source 101, and the other end is connected to one side of the semiconductor thin film material 104. Specifically, the positive electrode and the negative electrode of the electrode 103 are bonded to one side of the semiconductor thin film material 104 in a specific manner. For example, when connecting the electrode 103 and the semiconductor thin film material 104, any one of magnetron sputtering coating, vacuum thermal evaporation, electron beam evaporation or spin coating can be used to coat an electrode thin film layer on one side of the semiconductor thin film material 104, thereby forming a contact structure between the semiconductor thin film material and the electrode.

[0042] In the above description, the connection method of one side of the semiconductor thin film material 104 of the device has been described, and on the other side of the semiconductor thin film material 104, the semiconductor thin film material 104 is deposited on the substrate 105. Specifically, the semiconductor thin film material 104 can be prepared on the substrate 105 by at least one of the following methods, for example, the semiconductor thin film material 104 can be deposited on the substrate 105 by plasma enhanced chemical vapor method, or magnetron sputtering method, or vacuum thermal evaporation method, or electron beam evaporation method, or spin coating method.

[0043] The structure and connection method of the device for measuring vacuum degree have been described above. The following description will continue to explain the material selection of each part of the device.

[0044] The electrode 103 can be made of at least one of the following materials as the electrode material of the vacuum degree measuring device of this embodiment. For example, aluminum, gold, copper, silver or indium can be selected as the material of the electrode 103.

[0045] The substrate 105 of this embodiment is an insulating material. The substrate 105 can select at least one of the following materials as the substrate material of the vacuum degree measuring device of this embodiment. For example, insulating materials such as glass and ceramics can be selected as the material of the substrate 105.

[0046] The semiconductor film material 104 of this embodiment, as the most important component of the detection device of this embodiment, can be selected from at least one of the following materials as the semiconductor film material of the vacuum degree measuring device of this embodiment, such as at least one of hydrogen-doped amorphous silicon, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium; or at least one of copper indium gallium selenide and cadmium telluride intrinsic semiconductor film materials; or at least one of n-type or p-type amorphous silicon, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium semiconductor film materials doped with boron, phosphorus, arsenic, hydrogen, and carbon; or at least one of indium tin oxide, tin oxide, and zinc oxide transparent conductive oxide film materials doped with aluminum, antimony, or fluorine. In addition, the semiconductor film material 104 of this embodiment can be prepared by at least one of plasma enhanced chemical vapor method, magnetron sputtering method, vacuum thermal evaporation method, electron beam evaporation method, and spin coating method.

[0047] The conductive principle of the semiconductor thin film material of this embodiment is described as follows.

[0048] The thin film material mentioned in this embodiment refers to an amorphous or microcrystalline semiconductor thin film material with a low degree of crystallization, defects inside the material, and a mass density lower than that of a single crystal or polycrystalline material. From the perspective of crystal structure, amorphous or microcrystalline semiconductor thin film materials are short-range ordered but long-range disordered; single crystal materials are long-range ordered; and polycrystalline materials are between the two. Specific amorphous or microcrystalline thin film materials include amorphous silicon, microcrystalline silicon, amorphous silicon germanium, microcrystalline silicon germanium, which are not doped with boron or phosphorus but doped with hydrogen, and intrinsic semiconductor thin film materials such as copper indium gallium selenide and cadmium telluride that are not doped with boron, phosphorus and hydrogen, n-type or p-type amorphous silicon, microcrystalline silicon, amorphous silicon germanium, microcrystalline silicon germanium, and other semiconductor thin film materials doped with boron, phosphorus, arsenic, hydrogen or carbon, and transparent conductive oxide thin film materials such as indium tin oxide, tin oxide, and zinc oxide doped with aluminum, antimony or fluorine. The method for obtaining these thin film materials can be plasma enhanced chemical vapor deposition (PECVD), magnetron sputtering, vacuum thermal evaporation, electron beam evaporation, and spin coating. Afterwards, these thin films are deposited on a substrate, thereby obtaining the semiconductor thin film material 104 of the device for detecting vacuum degree of this embodiment.

[0049] In the specific preparation process, these semiconductor thin film materials with amorphous or microcrystalline structures have a large number of defects inside the materials due to the preparation temperature, process and method. In order to achieve some specific purposes, it is necessary to reduce the defect state density in the material through annealing or doping. For example, copper indium gallium selenide materials are annealed to improve the crystallinity of the material; for intrinsic amorphous silicon materials, hydrogen is doped to reduce the defect state density in the material. In addition, the photoelectric properties of semiconductor materials can be changed by doping elements such as boron, phosphorus, arsenic, aluminum, carbon, nitrogen or germanium. For example, amorphous silicon materials, when doped with carbon, become wide bandgap materials, which can allow more short-wave light to pass through the material; doping with germanium becomes narrow bandgap materials, and short-wave light is easily absorbed by the material but not easy to pass through the material; doping with boron, it becomes p-type amorphous silicon, holes in the material are the majority carriers, and the conductivity type is hole conduction; doping with phosphorus, it becomes n-type amorphous silicon, electrons in the material are the majority carriers, and the conductivity type is electron conduction. The conductivity of p- or n-type semiconductor materials doped with boron or phosphorus is generally higher than that of intrinsic semiconductor materials not doped with boron or phosphorus, that is, their conductivity is larger.

[0050] The conductivity of semiconductor thin film materials is not only affected by internal factors such as defect state density, defect state type (such as dangling bonds, interface states, etc.), band gap width, film thickness, length, surface structure and other inherent factors, but also by external factors such as applied electric field, magnetic field, temperature, light, humidity and oxygen. The influence of these internal and external factors on the conductivity of semiconductor thin film materials is often relative: for example, in some cases some factors are the main factors, and in some cases other factors become the main factors. For example, the optical band gap width of zinc oxide transparent conductive film material with wide band gap is about 3.3eV when it is not doped. After doping, its optical band gap width can be adjusted to about 2.2eV according to the doping concentration. Because the band gap width is large, the energy required for electrons to jump from the valence band to the conduction band is relatively high, so the temperature and light have little effect on the conductivity of the material after doping, and the doping concentration has a greater effect on the conductivity of the material. However, when the doping rate is high, the conductivity decreases and the transmittance also decreases. For example, the optical band gap width of intrinsic amorphous silicon material is about 1.7eV. Because the band gap width is relatively small, the energy required for electrons to jump from the valence band to the conduction band is relatively low, so temperature and light have a greater impact on the conductivity of the material.

[0051] In the appropriate band gap width, such as 1.0eV to 2.0eV, suitable semiconductor thin film materials, such as amorphous silicon, microcrystalline silicon, etc., are used. Figure 1 The coplanar electrode structure shown is used to measure the vacuum degree.

[0052] In the embodiments of the present application, Figure 1 The semiconductor thin film material 104 in the embodiment is an intrinsic amorphous silicon thin film material. Since the optical band gap width of the intrinsic amorphous silicon material is about 1.7 eV, the band gap width is relatively small, and the energy required for electrons to transition from the valence band to the conduction band is relatively low. Temperature and light have a greater impact on the conductivity of the material. Therefore, when Figure 1 When the semiconductor film material 104 of the device shown is an intrinsic amorphous silicon material, it needs to be tested in a dark room away from light, and at the same time, the temperature change should be kept within ±2°C. The device is used in a dark room to ensure that factors such as light do not affect the conductivity of the semiconductor film material 104, that is, do not affect the resistance of the semiconductor film material 104, and only the vacuum degree is set as the only factor affecting the resistance of the semiconductor film material 104, that is, the single variable method is used to explore the quasi-linear relationship between the vacuum degree and the resistance of the semiconductor film material 104.

[0053] The principle of using this device to measure vacuum degree is described as follows. Figure 1As shown, the distance between the two electrodes is the length L of the thin film material, in this embodiment L = 550μm, the electrode width is the width W of the thin film material, in this embodiment W = 16mm, the material thickness is d, in this example d = 300nm. When these parameters are fixed, according to Ohm's theorem, a fixed voltage V is applied to the electrodes at both ends of the semiconductor thin film material 104 through a DC voltage source, and the current I passing through the semiconductor thin film material 104 is measured by an ammeter, and the resistance R of the material can be obtained. In this embodiment, a fixed voltage of 50V is applied to the electrodes at both ends of the semiconductor thin film material 104, and it is measured that the resistance of the intrinsic amorphous silicon thin film material increases with the increase of the vacuum degree. The relationship between the resistance and the vacuum degree is shown as follows: Figure 2 As shown, Figure 2 This is a graph showing the relationship between the resistance of intrinsic amorphous silicon thin film material and the degree of vacuum.

[0054] Figure 2 The thick solid line in the figure is the experimental measurement value. It can be seen that the vacuum degree P changes from 4Pa to 882Pa, the vacuum degree increases by 878Pa, and the resistance R of the intrinsic amorphous silicon thin film material increases from 6.66×10 11 Ω changes to 4.99×10 12 Ω, the resistance increases by 4.32×10 12 Ω. Simply calculated according to the change value, the average slope is 4.92×10 9 Ω / Pa. In other words, for every 1Pa increase in vacuum, the resistance R of the intrinsic amorphous silicon thin film material increases by 4.92×10 9 Ω, sensitivity is 2.03×10 -10 Pa / Ω, relatively speaking, this is a very high sensitivity. Figure 2 The thin dotted line in the figure is the trend line fitted according to the thick solid line. By comparing the solid line measurement value and the dotted line trend line, it can be seen that the resistance value and the vacuum degree in the solid line are not in an absolute linear relationship, but the deviation from the dotted line trend line is not large, and basically presents a quasi-linear relationship.

[0055] As mentioned in the background technology, the same vacuum degree measuring device in the prior art cannot measure the vacuum degree in a wider range from low vacuum to high vacuum. Compared with the vacuum degree measuring device in the prior art, this device can measure the vacuum degree in a wider range from low vacuum to high vacuum.

[0056] As mentioned above, the device was used to measure the resistance R of the intrinsic amorphous silicon thin film material corresponding to the vacuum degree changing from 4Pa to 882Pa. In subsequent processing, the obtained resistance R can be measured by extending the wire. Figure 2 The quasi-linear relationship diagram is 10 -5 ~10 5 Pa vacuum range, thus obtaining 10 -5~10 5 Quasi-linear relationship between the resistance R and vacuum degree of intrinsic amorphous silicon thin film material within the vacuum range of Pa. In practice, due to Figure 2 The solid line graph in the figure has a small deviation from the dotted line graph. -5 ~10 5 Pa vacuum range extended Figure 2 The dotted line is extended as shown in Figure 3 As shown, the extended dotted line is taken as 10 -5 ~10 5 Quasi-linear relationship between the resistance R of intrinsic amorphous silicon thin film material and vacuum degree within the vacuum degree range of Pa. -5 ~10 5 The vacuum degree measured by the device within the vacuum degree range of Pa shows a quasi-linear relationship with the resistance of the intrinsic amorphous silicon thin film material. -5 ~10 5 The data points within the vacuum range of Pa were selected for verification. Figure 3 The vacuum value obtained is consistent with the actual measured vacuum value. It should be noted that the verification here means that Figure 3 The obtained vacuum value and the actual measured vacuum value are within the specified threshold range. It should be noted that the specified threshold range can be a pre-set value range. Of course, the closer the two values ​​are, the more verified 10 -5 ~10 5 Within the vacuum range of Pa, the vacuum degree measured by the device shows a quasi-linear relationship with the resistance of the intrinsic amorphous silicon thin film material.

[0057] The specific verification process can be carried out as described below.

[0058] First, according to the 10 -5 ~10 5 The quasi-linear relationship between the resistance value and the vacuum value within the vacuum range of Pa is shown in the figure. 5 Pa and 10 -5 Within the vacuum degree range of 240 to 4 Pa, different resistance values ​​are randomly selected to obtain a first vacuum degree value corresponding to the selected resistance value.

[0059] Afterwards, in practice, a second vacuum degree value corresponding to the selected resistance value is measured by a vacuum degree measuring device in the prior art.

[0060] Finally, the second vacuum value is compared with the first vacuum value. If the first vacuum value is within the threshold range of the second vacuum value, then -5 ~10 5Within the vacuum degree range of Pa, the resistance value of the semiconductor thin film material of the device for measuring the vacuum degree and the vacuum degree of the device for measuring the vacuum degree are in a quasi-linear relationship.

[0061] It has been proven that in 10 -5 ~10 5 Within the vacuum range of Pa, the vacuum degree and the resistance of the intrinsic amorphous silicon thin film material show a quasi-linear relationship. Figure 2 In the figure, the dotted line graph has little deviation from the thick solid line, so the extended line of the dotted line can be used, that is, Figure 3 The relationship between the resistance value and the vacuum degree shown in the figure and the resistance value measured by the device are estimated to be 10 -5 ~10 5 Pa is the vacuum value within the vacuum range.

[0062] In addition, the device of this embodiment is a vacuum pressure sensor. In the existing vacuum detection device, the method of measuring low vacuum mainly involves measuring parameters such as temperature (the measuring instrument is a thermocouple vacuum gauge), resistance (the measuring instrument is a resistance vacuum gauge) or capacitance (the measuring instrument is a capacitive film vacuum gauge). However, the relationship between the above parameters measured by the above device and the vacuum degree is a nonlinear relationship, so it is impossible to obtain a linear relationship between a certain parameter and the vacuum degree. Although the existing U-tube vacuum gauge measuring instrument (the measuring parameter is the height of mercury or alcohol) has a linear relationship between the measured height parameter and the vacuum degree, its measurement range is only low vacuum, and the required liquid volume is large. In addition, the glass container is easily damaged, the measurement range is small, and the accuracy is poor. At the same time, mercury is toxic and the vapor pressure of alcohol is relatively high, which limits the scope of use of the above device. Compared with the mercury U-tube vacuum gauge in the prior art, the device for measuring vacuum degree in this embodiment has the advantages of small size, non-toxicity, good safety, and not easy to damage. At the same time, the device of this embodiment can be used in a standard atmospheric pressure to high vacuum range, that is, the measurement range is 10 -5 ~10 5 Pa, using the same measuring device, the vacuum range from a standard atmospheric pressure to a high vacuum can be measured. It is not easy to burn, and the electrical signal can be directly obtained. By measuring the electrical signal and the vacuum degree, it is found that the two have a good quasi-linear relationship. In addition, when measuring in the low vacuum range, the measurement accuracy of the device is higher than that of all the current low vacuum measurement methods, and the sensitivity is high.

[0063] Embodiment 1 of the present application provides a device for measuring vacuum degree, and correspondingly, Embodiment 2 of the present application provides a method for measuring vacuum degree. Figure 4As shown, it is a flow chart of the method for measuring vacuum degree in the second embodiment of the present application. Since this method is similar to the measuring method of the device for measuring vacuum degree in the above-mentioned embodiment, please refer to the relevant description part in the first embodiment for the relevant part. The following measuring method is merely illustrative.

[0064] The method for measuring vacuum degree in this embodiment includes:

[0065] Step S401: randomly select points within a vacuum range of 4 to 882 Pa and in a darkroom to obtain the resistance value of a semiconductor thin film material used to measure the vacuum degree.

[0066] Step S402: obtaining vacuum degree values ​​corresponding to the different resistance values.

[0067] Step S403: obtaining a quasi-linear relationship diagram between the resistance value and the vacuum degree value.

[0068] Step S404: Extend the quasi-linear relationship graph to obtain 10 -5 ~10 5 Quasi-linear relationship between resistance value and vacuum value within the vacuum range of Pa.

[0069] The above mentioned method was used to measure the resistance R of the intrinsic amorphous silicon thin film material corresponding to the vacuum degree changing from 4Pa to 882Pa. In the subsequent processing, the quasi-linear relationship between the resistance value and the vacuum value obtained when the vacuum degree changes from 4Pa to 882Pa can be obtained by extending the line in 10 -5 ~10 5 Pa vacuum range, thus obtaining 10 -5 ~10 5 The quasi-linear relationship diagram between the resistance R and the vacuum degree of the intrinsic amorphous silicon thin film material within the vacuum degree range of 4Pa. In practice, the quasi-linear relationship diagram between the resistance value and the vacuum degree value when the vacuum degree changes from 4Pa to 882Pa can be fitted to obtain the ideal absolute linear relationship diagram between the resistance value and the vacuum degree value when the vacuum degree changes from 4Pa to 882Pa, as shown in the first embodiment above. Figure 2 As shown by the dotted line, Figure 2 The deviation between the solid line graph and the dotted line graph is very small, and it can also be found in 10 -5 ~10 5 Pa vacuum range extended Figure 2 The dashed line is extended as 10 -5 ~10 5 Quasi-linear relationship between the resistance R of intrinsic amorphous silicon thin film material and the vacuum degree within the vacuum degree range of Pa.

[0070] Step S405: According to the 10 -5 ~105 Quasi-linear relationship diagram between resistance value and vacuum value within the vacuum range of Pa, and the resistance value of semiconductor thin film material to obtain vacuum degree.

[0071] In a further solution of the vacuum degree detection method provided in this embodiment, it is also necessary to verify 10 -5 ~10 5 Whether the resistance value and the vacuum value within the vacuum range of Pa conform to a quasi-linear relationship. Specifically, verification can be performed according to the following description.

[0072] First, through the 10 -5 ~10 5 The quasi-linear relationship between the resistance value and the vacuum value within the vacuum range of Pa is shown in the figure. 5 Pa and 10 -5 Within the vacuum degree range of 240 to 4 Pa, different resistance values ​​are randomly selected to obtain a first vacuum degree value corresponding to the selected resistance value.

[0073] Afterwards, in practice, a second vacuum degree value corresponding to the selected resistance value is measured by a vacuum degree measuring device in the prior art.

[0074] Finally, the second vacuum value is compared with the first vacuum value. If the first vacuum value is within the threshold range of the second vacuum value, then -5 ~10 5 Within the vacuum degree range of Pa, the resistance value of the semiconductor thin film material of the device for measuring the vacuum degree and the vacuum degree of the device for measuring the vacuum degree are in a quasi-linear relationship.

[0075] Although the present application is disclosed as above in the form of a preferred embodiment, it is not intended to limit the present application. Any technical personnel in this field may make possible changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be based on the scope defined by the claims of the present application.

Claims

1. A device for measuring vacuum degree, characterized in that: include: Power supplies, ammeters, electrodes, semiconductor thin film materials and substrates; The positive and negative electrodes of the power supply are connected to the electrodes via wires; The ammeter is installed between the power source and the electrode; The electrode is connected to the semiconductor thin film material; The semiconductor thin film material is deposited on the substrate; The device is used to obtain the resistance value of the semiconductor thin film material and the corresponding vacuum value in the vacuum range of 4-882Pa and in darkroom conditions to obtain a quasi-linear relationship diagram, and then extend the quasi-linear relationship diagram to obtain 10 -5 ~10 5 The quasi-linear relationship between the resistance value and the vacuum value within the vacuum range of Pa is shown in Figure 10. -5 ~10 5 A quasi-linear relationship diagram within the vacuum degree range of Pa and the vacuum degree obtained by the resistance value of the semiconductor thin film material; Wherein, the semiconductor thin film material comprises: At least one of hydrogen-doped amorphous silicon, hydrogen-doped microcrystalline silicon, hydrogen-doped amorphous silicon germanium, and hydrogen-doped microcrystalline silicon germanium; or, At least one of copper indium gallium selenide and cadmium telluride intrinsic semiconductor thin film materials; or, At least one of n-type or p-type amorphous silicon doped with boron, phosphorus, arsenic, hydrogen, or carbon, n-type or p-type microcrystalline silicon doped with boron, phosphorus, arsenic, hydrogen, or carbon, n-type or p-type amorphous silicon germanium doped with boron, phosphorus, arsenic, hydrogen, or carbon, and n-type or p-type microcrystalline silicon germanium semiconductor thin film materials doped with boron, phosphorus, arsenic, hydrogen, or carbon; or At least one of indium tin oxide doped with any one of aluminum, antimony, and fluorine, tin oxide doped with any one of aluminum, antimony, and fluorine, and zinc oxide transparent conductive oxide thin film materials doped with any one of aluminum, antimony, and fluorine.

2. The device for measuring vacuum degree according to claim 1, characterized in that: The electrode comprises a positive electrode and a negative electrode; the positive electrode and the negative electrode are both bonded to the semiconductor thin film material.

3. The device for measuring vacuum degree according to claim 1, characterized in that: The electrode is connected to the wire by at least one of elastic pressure pin, tin soldering, silver paste welding and ultrasonic pressure welding.

4. The device for measuring vacuum degree according to claim 1, characterized in that: The electrode includes at least one of the following: aluminum, gold, copper, silver, and indium.

5. The device for measuring vacuum degree according to claim 1, characterized in that: The substrate is an insulating material, and the substrate includes at least one of the following: glass and ceramic.

6. The device for measuring vacuum degree according to claim 1, characterized in that: The semiconductor thin film material is deposited on the substrate by at least one of plasma enhanced chemical vapor deposition, magnetron sputtering, vacuum thermal evaporation, electron beam evaporation, and spin coating.

7. A method for measuring vacuum degree, characterized in that: include: Using the device for measuring vacuum degree as described in any one of claims 1 to 6, randomly taking points in the vacuum degree range of 4 to 882 Pa and in darkroom conditions to obtain the resistance value of the semiconductor thin film material used to measure the vacuum degree; Obtain the vacuum degree values ​​corresponding to different resistance values; Obtaining a quasi-linear relationship diagram between the resistance value and the vacuum degree value; Extending the quasi-linear relationship graph, we get 10 -5 ~10 5 Quasi-linear relationship diagram between resistance value and vacuum value within the vacuum range of Pa; According to the 10 -5 ~10 5 Quasi-linear relationship diagram between resistance value and vacuum value within the vacuum range of Pa, and the resistance value of semiconductor thin film material to obtain vacuum degree.

8. The method for measuring vacuum degree according to claim 7, characterized in that: Also includes: Judgment 10 -5 ~10 5 Whether the resistance value and vacuum value within the vacuum range of Pa conform to the quasi-linear relationship; The judgment includes: By the 10 -5 ~10 5 The quasi-linear relationship between the resistance value and the vacuum value in the vacuum range of Pa is shown in the figure. 5 Pa and 10 -5 Within a vacuum range of 1.4 Pa, different resistance values ​​are randomly selected to obtain a first vacuum value corresponding to the selected resistance value; In practice, measuring a second vacuum degree value corresponding to the selected resistance value; Compare the second vacuum value with the first vacuum value, if the first vacuum value is within the threshold range of the second vacuum value, then -5 ~10 5 Within the vacuum degree range of Pa, the resistance value of the semiconductor thin film material of the device for measuring the vacuum degree and the vacuum degree of the device for measuring the vacuum degree are in a quasi-linear relationship.

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