Cooling Technology for Semiconductor Packaging

Abstract

In some examples, a device includes a high-side switch, a first high-side conductive element electrically connected to a first load terminal of the high-side switch, and a second high-side conductive element electrically connected to a second load terminal of the high-side switch. The device also includes a cooling material layer encapsulating the high-side switch, the first high-side conductive element, and the second high-side conductive element. The device also includes a low-side switch, a first low-side conductive element electrically connected to the first load terminal of the low-side switch, and a second low-side conductive element electrically connected to the second load terminal of the low-side switch. The cooling material layer encapsulates the low-side switch, the first low-side conductive element, and the second low-side conductive element.

Description

Technical Field

[0001] The present disclosure relates to semiconductor packaging. Background Art

[0002] Semiconductor devices may generate heat during device operation. Device heat dissipation may be important to prevent device damage such as expansion or melting of components in the device. Heat dissipation techniques may utilize materials with good thermal conductivity (e.g., metals) that are designed to conduct heat away from the area where the heat is generated. Summary of the invention

[0003] The present disclosure describes direct cooling techniques and indirect cooling techniques for dissipating heat in semiconductor devices. A device may include two switches, each of which is electrically connected to one or more conductive elements. In a direct cooling example, each switch and the corresponding conductive element are surrounded by a cooling material capable of removing the heat generated by the switch. In an indirect cooling example, the switch and the corresponding conductive element are separated by a cooling element. By being positioned between the switches, the cooling element can remove the heat generated by the two switches. In some examples of indirect cooling, the cooling element is configured to transport a liquid so as to increase the thermal dissipation of heat from the switch. In some examples, a device may include both a direct cooling structure and an indirect cooling structure.

[0004] In some examples, a device includes a high-side switch, a first high-side conductive element electrically connected to a first load terminal of the high-side switch, and a second high-side conductive element electrically connected to a second load terminal of the high-side switch. The device also includes a cooling material layer encapsulating the high-side switch, the first high-side conductive element, and the second high-side conductive element. The device also includes a low-side switch, a first low-side conductive element electrically connected to the first load terminal of the low-side switch, and a second low-side conductive element electrically connected to the second load terminal of the low-side switch. The cooling material layer encapsulates the low-side switch, the first low-side conductive element, and the second low-side conductive element.

[0005] In some examples, a device includes a cooling element, a high-side switch, and a high-side conductive element electrically connected to a load terminal of the high-side switch, wherein the high-side conductive element is positioned between the high-side switch and the cooling element. The device also includes a low-side switch and a low-side conductive element electrically connected to the load terminal of the low-side switch, wherein the low-side conductive element is positioned between the low-side switch and the cooling element.

[0006] In some examples, a method includes electrically connecting a high-side conductive element to a first load terminal of a high-side switch. The method also includes electrically connecting a low-side conductive element to the first load terminal of the low-side switch. The method also includes positioning a cooling element such that the high-side conductive element is positioned between the high-side switch and the cooling element, and such that the low-side conductive element is positioned between the low-side switch and the cooling element.

[0007] The details of one or more examples are set forth in the accompanying drawings and the description below. Other features, objects, and advantages will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1A is a conceptual block diagram illustrating two switches encapsulated by a cooling material according to some examples of the present disclosure.

[0009] Figure 1B is a conceptual block diagram illustrating a cooling element positioned between two switches according to some examples of the present disclosure.

[0010] Figure 1C is a conceptual block diagram illustrating a cooling element positioned between thermally conductive materials according to some examples of the present disclosure.

[0011] Figure 1D-1G is a conceptual block diagram illustrating materials that may be positioned adjacent to a cooling element or switch according to some examples of the present disclosure.

[0012] Figure 2 is a conceptual block diagram illustrating fluid cooling elements positioned on both sides of two switches according to some examples of the present disclosure.

[0013] Figure 3 is a conceptual block diagram illustrating an apparatus including two parts, each of which includes a cooling element, according to some examples of the present disclosure.

[0014] Figure 4A is a conceptual block diagram illustrating a device including a printed circuit board and four electrical interfaces according to some examples of the present disclosure.

[0015] Figure 4B is a conceptual block diagram illustrating an apparatus including an interconnection element positioned on the outside of two switches according to some examples of the present disclosure.

[0016] Figure 4C and Figure 4E is a conceptual block diagram illustrating a C-shaped interconnect element according to some examples of the present disclosure.

[0017] Figure 4D is a circuit diagram showing a half-bridge circuit.

[0018] Figure 5 is a conceptual block diagram illustrating a switch encapsulated in a material according to some examples of the present disclosure.

[0019] Figures 6A-6C is a perspective view of a switch encapsulated in a material according to some examples of the present disclosure.

[0020] Figure 7 is a side view of two switches electrically connected by two interconnection elements according to some examples of the present disclosure.

[0021] Figure 8 is a perspective view of a semiconductor sub-module including an interconnection element positioned on an inner side of a switch according to some examples of the present disclosure.

[0022] Fig. 9A and Fig. 9B is a perspective view of a final module encapsulated in a material having electrical and fluidic interfaces according to some examples of the present disclosure.

[0023] Figures 10A-10C is a perspective view of a switch encapsulated in a material according to some examples of the present disclosure.

[0024] Fig.11 is a perspective view of a semiconductor submodule including three parts and twelve switches according to some examples of the present disclosure.

[0025] Fig.12 is a perspective view of a semiconductor sub-module including an interconnection element positioned on an outside of a switch according to some examples of the present disclosure.

[0026] Fig.13 is an exploded view of two half-shells of a housing for a semiconductor submodule according to some examples of the present disclosure.

[0027] Fig.14A and Fig. 14B is a perspective view of a semiconductor submodule in a housing according to some examples of the present disclosure.

[0028] Fig.15 is a perspective view of a housing having an electrical interface and a fluid interface according to some examples of the present disclosure.

[0029] Fig.16 is a flow chart illustrating an exemplary technique for constructing a semiconductor module according to some examples of the present disclosure.

[0030] Fig.17 is a conceptual block diagram illustrating two switches enclosed in a cooling material surrounded by a housing according to some examples of the present disclosure.

[0031] Fig.18 is a conceptual block diagram illustrating a first body having a control signal pin, a power pin, and an output pin extending out of the first body according to some examples of the present disclosure.

[0032] Fig.19 is a conceptual block diagram illustrating a second body encapsulating a first body, wherein interconnects and interfaces extend out of the second body, according to some examples of the present disclosure.

[0033] Fig. 20 is a conceptual block diagram illustrating a second body encapsulating a first body, wherein interconnects, signal ports, and fluid interfaces extend out of the second body, according to some examples of the present disclosure. DETAILED DESCRIPTION

[0034] The present disclosure describes a technique for dissipating heat generated by switches. The apparatus of the present disclosure includes at least two switches, each of which has a load terminal electrically connected to a conductive element. In a direct cooling approach, each switch and a conductive element attached to the switch are surrounded by a cooling material that dissipates heat from the switch and the conductive element. In an indirect cooling approach, a cooling element is positioned between the switch and the corresponding conductive element. The two approaches can be used together so that the cooling material can surround the cooling element, the switch, and the conductive element.

[0035] A device may include two types of cooling materials, wherein a first type of cooling material layer is positioned between conductive elements or between conductive elements and cooling elements. A second type of material may be used to surround the first type of cooling material, switches, conductive elements, and cooling elements. In some examples, the device has a housing that covers all components and the cooling material. The technology of the present disclosure can be extended to a multi-phase device having a portion for each phase. Each portion may include at least one switch, and the cooling material and / or cooling element may extend through all portions of the device.

[0036] Each switch can be positioned between two conductive elements, wherein each conductive element is electrically connected to a load terminal of the switch. In some examples, the first conductive element is configured to receive a power supply, whether a high-side power supply or a low-side power supply, and the second conductive element is configured to deliver an output signal. The second conductive element can be electrically connected to a conductive element of another switch, for example, to form a switch node of a half-bridge circuit. The output conductive element can be positioned on the outside (not facing the other switch) or the inside (facing the other switch) of the corresponding switch. Positioning the output conductive element (e.g., a switch node or an output node) on the outside of the switch can reduce the impedance and stray inductance of the device.

[0037] Figure 1A1 is a conceptual block diagram showing two switches 110A and 112A encapsulated by a cooling material 140A according to some examples of the present disclosure. The device 100A includes switches 110A and 112A, conductive elements 120A, 122A, 130A and 132A, and cooling material 140A. In some examples, the device 100A may include a power converter, such as a half-bridge DC to DC (DC / DC) buck converter, for converting an input DC signal into an output DC signal with a lower voltage. The device 100A may include a plurality of parts, each of which operates as a phase of a multiphase power converter. For each phase, the multiphase power converter may include a half-bridge circuit or an H-bridge circuit. In some examples, the half-bridge circuit may include two or more high-side switches electrically connected in parallel and two or more low-side switches electrically connected in parallel to increase the flow of current. As a DC to DC buck converter, the device 100A may operate as a voltage regulator in various applications. In some examples, the device 100A may be designed for high-power applications with large current amounts and high voltages. However, the techniques of this disclosure may be applied to other circuits and configurations, such as other power converters, including multi-phase power converters and alternating current to DC (AC / DC) power converters.

[0038] like Figure 1A As shown in , the device 100A may include one or more submodules, wherein each submodule includes at least two switches and corresponding conductive elements. Each submodule of the device 100A may be used as a phase part (see Figure 3 ) to operate. One or more submodules may be standardized, making them less expensive to assemble and relatively easy to test, which provides the opportunity for free scaling. The submodules may be assembled to sit side by side on top and below the C-shaped interconnect element (see, for example, Figure 4B , 4E and 12). Manufacturers, production partners and / or customers can build larger units from several submodules to achieve higher current carrying capabilities. For example, one submodule can carry two hundred amps, two submodules can carry four hundred amps, and three submodules can carry six hundred amps.

[0039] In some examples, device 100A may include more or fewer components than shown in FIG. 1. Device 100A may include additional portions of switches and conductive elements, each of which operates as a phase of a multiphase power converter. Device 100A may include electrical nodes for a high-side power supply, a low-side power supply, and an output signal. The electrical nodes may be connected to conductive elements 120A, 122A, 130A, and 132A, and may be configured to connect to external components. In some examples, two of conductive elements 120A, 122A, 130A, and 132A may serve as power rails (e.g., VDD and Vss), and two of the conductive elements 120A, 122A, 130A, and 132A operate as output nodes, such as switching nodes of a bridge circuit including switches 110A and 112A.

[0040] like Figure 4A and Figure 4E As shown, the outer conductive elements 120A and 122A can operate as power rails, and the inner conductive elements 130A and 132A can operate as output nodes. Figure 4B and Figure 4C As shown, the outer conductive elements 120A and 122A can operate as output nodes, and the inner conductive elements 130A and 132A can operate as power rails. By configuring the outer conductive elements 120A and 122A as output nodes, the device 100A can have lower stray inductance than a device in which the inner conductive elements operate as output nodes.

[0041] Switches 110A and 112A may include metal oxide semiconductor (MOS) field effect transistors (FETs), bipolar junction transistors (BJTs), and / or insulated gate bipolar transistors (IGBTs). Switches 110A and 112A may include n-type transistors or p-type transistors. In some examples, switches 110A and 112A may include other analog devices, such as diodes. Switches 110A and 112A may also include a freewheeling diode connected in parallel with the transistor to prevent reverse breakdown of switches 110A and 112A. In some examples, switches 110A and 112A may operate as switches, as analog devices, and / or power transistors. Current may flow vertically (in the z-axis direction) through switches 110A and 112A between corresponding conductive elements based on control signals 150A and 152A.

[0042] Switches 110A and 112A may include various material compounds, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or any other combination of one or more semiconductor materials. To take advantage of higher power density requirements in some circuits, power converters may operate at higher frequencies. Improvements in magnetics and faster switches such as gallium nitride (GaN) switches may support higher frequency switching. These higher frequency circuits may require control signals to be sent with more precise timing than for lower frequency circuits. Figure 1B-Figure 15 The switches may have the same or similar properties as switches 110A and 112A.

[0043] Conductive elements 120A, 122A, 130A, and 132A may include metallization layers, lead frame portions, clips, ribbons, die paddles, wire bonds, and / or any other suitable conductive material. Conductive elements 120A, 122A, 130A, and 132A may include materials such as copper, gold, aluminum, solder, and / or any other conductive material. Figure 1B-Figure 15 The conductive elements of the conductive elements 120A, 122A, 130A and 132A may have the same or similar properties as the conductive elements 120A, 122A, 130A and 132A. For thicknesses less than the direct bonded copper (DBC) component, the single conductive material layer of the conductive elements 120A, 122A, 130A and 132A may be three hundred microns, and the spacer material (e.g., Figure 1B The materials 180B and 182B in the embodiment of the present invention can have approximately the same thickness. For this reason, in some examples, it may be desirable to avoid using a DBC component and instead use a single conductive material layer.

[0044] Each of the conductive elements 120A, 122A, 130A, and 132A may be electrically connected to a corresponding one of the switches 110A and 112A. For example, the conductive elements 120A and 130A may be electrically connected to a load terminal of the switch 110A and configured to deliver electrical power to and / or receive electrical power from the switch 110A. The output node of the device 100A may include two of the conductive elements 120A, 122A, 130A, and 132A.

[0045] The cooling material 140A may partially or completely encapsulate the switches 110A and 112A and the conductive elements 120A, 122A, 130A, and 132A. The cooling material 140A may be formed around the switch and one or more conductive elements to allow electrical connections to extend from each conductive element to external components, such as power supplies or output terminals. The cooling material 140A may include a plastic material, such as a thermoplastic material, a molding compound, and / or any other suitable material. The cooling material 140A may be in direct contact with the switches 110A and 112A and the conductive elements 120A, 122A, 130A, and 132A to absorb and remove the heat generated by the switches 110A and 112A. The cooling material 140A may also have good electrical isolation properties.

[0046] Cooling material 140A may form a layer around switches 110A and 112A and conductive elements 120A, 122A, 130A, and 132A. A distance 160A between conductive elements 130A and 132A separated by cooling material 140A may be less than five hundred microns, less than one millimeter, less than two millimeters, or any other suitable distance range. Shorter distances may result in a smaller and less expensive device 100A, but may present challenges for electrically isolating conductive elements 130A and 132A.

[0047] The switches 110A and 112A may be operated based on the control signals 150A and 152A. The switches 110A and 112A may be configured to be electrically connected to the switches 110A and 112A via pins or electrical leads (e.g., Figure 5 ) receives control signals 150A and 152A. In some examples, device 100A includes more than one section, each of which includes a phase having at least two switches. For example, each section can be configured to operate as a phase in a multiphase power converter. Any device of the present disclosure may include multiple sections, each of which operates as a phase in a multiphase power converter.

[0048] Figure 1B 1 is a conceptual block diagram illustrating a cooling element 140B positioned between two switches 110B and 112B according to some examples of the present disclosure. The conductive element 120B may be positioned between the high-side switch 110B and the cooling element 140B. The conductive element 122B may be positioned between the low-side switch 112B and the cooling element 140B. Thus, each of the conductive elements 120B and 122B may be configured to conduct heat from a corresponding one of the switches 110B and 112B to the cooling element 140B.

[0049] Cooling element 140B can be configured to remove heat from the components (e.g., switches 110B and 112B) of device 100B. Cooling element 140B can include heat-conducting materials, such as metals, ceramic materials, molding compounds and / or fluids. By using fluid, cooling element 140B can provide indirect cooling to switches 110B and 112B. Cooling element 140B can be electrically isolated from switches 110B and 112B and conductive elements 120B and 122B to prevent cooling element 140B from interfering with the operation of device 100B. Cooling element 140B can include a fluid cooling element configured to transport fluid, such as liquid water, a mixture of water and ethylene glycol, carbon dioxide or another refrigerant. Fluid can receive heat from the components of device 100B, and then take away heat from the components of device 100B and take heat out of device 100B.

[0050] During operation of the device 100B, the switches 110B and 112B may generate heat. The heat from the switches 110B and 112B may cause thermal expansion of components of the device 100B. When the device 100B stops operating, the components of the device 100B thermally contract as the device 100B cools. The thermal expansion and contraction of the components of the device 100B may cause damage to the device 100B and may interfere with the operation of the device 100B. Therefore, it may be desirable to remove heat to prevent damage to the components of the device 100B.

[0051] The cooling element 140B can remove heat from the device 100B during operation to reduce thermal expansion and contraction. Thus, by removing heat from the device 100B, the cooling element 140B can prevent damage to the device 100B and improve the performance of the device 100B. The device 100B can include an integrated solution that includes Figure 1B All components shown in FIG. 1 are integrated so that even a relatively inexperienced customer can install the device 100B with little effort. The device 100B may include Figure 1B The components shown in FIG. 1 are integrated into a single device, so that the device 100B has a smaller footprint and lower cost than assembling separate components to construct the device 100B. Since heat is removed by the cooling element 140B, the device 100B can have good thermal and electrical performance.

[0052] The device 100B may also include a standardized interface for input signals and output signals. The standardized interface may include a first power pin for a high-side power supply and a first power pin for a low-side power supply. The device 100B may include an interface for sensing the temperature of a component of the device 100B. The device 100B may include an interface for sensing the current through switches 110B and 112B. If the cooling element 140B is a fluid cooling element, the device 100B may include an interface for a fluid that can move through the cooling element 140B.

[0053] Figure 1C 1 is a conceptual block diagram illustrating a cooling element 140C positioned between thermally conductive materials 180C and 182C according to some examples of the present disclosure. Device 100C is a dual material approach (materials 180C and 182C) to dissipate heat from switches 110C and 112C. In contrast, device 100A is a single material approach to dissipate heat from switches 110A and 112A.

[0054] Materials 180C and 182C may be thermally conductive and electrically insulating so as to prevent cooling element 140C from interfering with the electrical operation of switches 110C and 112C and conductive elements 120C and 122C. Materials 180C and 182C may also be configured to prevent fluid from moving between cooling element 140C and other components of device 100C. Materials 180C and 182C may include thermally conductive materials, such as fixed-in-place liquids, ceramics, spacers, thermosetting polymers such as thermosetting plastic materials, and / or any other suitable materials. Thermosetting polymer materials may be more suitable for direct contact with semiconductor switches than thermoplastic materials (e.g., heat-softening plastics). As Figure 1D-1G As shown, materials 180C and 182C may be one homogenous material or a heterogeneous mixture of more than one material.

[0055] The distance between the cooling element 140C and the conductive elements 120C and 122C can affect the thermal conductivity of the cooling element 140C. The materials 180C and 182C can fill all or some of the distance between the cooling element 140C and the conductive elements 120C and 122C. Compared with the larger distance between the cooling element 140C and the conductive elements 120C and 122C, the relatively small distance between the cooling element 140C and the conductive elements 120C and 122C can improve the thermal conductivity between the cooling element 140C and the conductive elements 120C and 122C. However, the small distance may increase the possibility that the cooling element 140C interferes with the electrical performance of other components of the device 100C. An important aspect of the electrical performance of the device 100C is the stray inductance caused by the current passing through the components of the device 100C.

[0056] In some examples, the distance between the conductive element 120C and the cooling element 140C separated by the material 180C can be in a range from two hundred microns to one millimeter, in a range from three hundred microns to eight hundred microns, or in a range up to two millimeters. Similarly, the distance between the conductive element 122C and the cooling element 140C separated by the material 182C can be in a range from two hundred microns to one millimeter, in a range from three hundred microns to eight hundred microns, or in a range up to two millimeters. These distances can be sufficiently large to electrically isolate the cooling element 140C from the conductive elements 120C and 122C while still providing thermal conductivity.

[0057] Material 170C can encapsulate switches 110C and 112C, conductive elements 120C and 122C, cooling element 140C, and materials 180C and 182C. Cooling element 140C can be an independent component constructed outside device 100C. Alternatively, cooling element 140C can be formed in situ by material 170C so that material 170C forms the wall or boundary of cooling element 140C. Material 170C can include thermoplastic material, molding compound and / or any other suitable material. Materials 170C, 180C and 182C can be positioned in device 100C so that cooling element 140C is separated from conductive elements 120C and 122C and is not in direct contact. Material 170C can have a lower level of ion purity than material 180C. The shell or housing of device 100C can include material 170C so that material 170C defines the outer dimensions and shape of device 100C.

[0058] Material 170C may be formed on device 100C such that material 170C fills all or nearly all of the gaps between components of device 100C to ensure adequate isolation robustness (e.g., electrical, mechanical, moisture diffusion). Device 100C may be designed to have small distances to be filled by material 170C to facilitate thermal conduction between components. Small distances between components may be desirable for thermal performance, but small distances may cause electrical problems such as short circuits, parasitic capacitance, and parasitic inductance.

[0059] Figure 1D-1G 1 is a conceptual block diagram illustrating materials that may be positioned adjacent to a cooling element or switch according to some examples of the present disclosure. Any of materials 180D-180G or a combination thereof may be positioned adjacent to a cooling element or switch, such as Figure 1C 180C and / or material 182C in the vertical layer. For example, material 180D is a heterogeneous component of material 190D. Material 180E is a heterogeneous component of materials 190E and 192E in the vertical layer. Material 180F is a heterogeneous component of materials 190F and 192F in the horizontal layer. Material 180G is a heterogeneous component of material 190G and has a pocket of material 192G inside material 190G.

[0060] Figure 2 2 is a conceptual block diagram illustrating fluid cooling elements 240-242 positioned on both sides of two switches 210 and 212 according to some examples of the present disclosure. The fluid cooling element 240 can be positioned to remove heat from the high-side switch 210 through the high-side power element 230. The fluid cooling element 242 can be positioned to remove heat from the low-side switch 212 through the low-side power element 232. The fluid cooling elements 240-242 can provide cooling to the top and bottom of the switches 210 and 212.

[0061] The device 200 may also include a thermally conductive material between the fluid cooling element 240 and the conductive element 230, between the fluid cooling element 241 and each of the conductive elements 220 and 222, and between the fluid cooling element 242 and the conductive element 232. The thermally conductive material may have a Figure 1C Materials 180C and 182C are shown to have similar properties. The thermally conductive material preferably has good gap filling properties so that no voids occur between components.

[0062] The interconnection elements 220 and 222 may be electrically connected to form a C-shaped interconnection element. The design of the C-shaped interconnection element may allow the interconnection element to be bent around the cooling element 241 to obtain better thermal performance. Figure 7 A C-shaped interconnecting element is depicted as an example of interconnecting elements 720, 722, and 724. The C-shaped interconnecting element may increase the surface area over which interconnecting elements 220 and 222 can transfer or radiate heat from switches 210 and 212 to fluid cooling element 241.

[0063] Power supply elements 230 and 232 can be connected by delivering or receiving a high-side power supply (e.g., V DD ) and a low-side power supply (e.g., reference ground) as voltage rails for switches 210 and 212. High-side power supply element 230 may be referred to as an "outer high-side conductive element" because high-side power supply element 230 is positioned toward the outside of device 200 relative to switch 210. High-side power supply element 230 may be positioned between high-side switch 210 and high-side fluid cooling element 240. Interconnect element 220 may be referred to as an "intermediate high-side conductive element" and interconnect element 222 may be referred to as an "intermediate low-side conductive element" because interconnect elements 220 and 222 are inside switches 210 and 212 and close to intermediate cooling element 241.

[0064] In some examples, a device can include a DBC component between each of switches 210 and 212 and each of fluid cooling elements 240-242. A first copper layer in the DBC component can operate as one of the conductive elements 220, 222, 230, and 232, while a second copper layer can be electrically isolated from switches 210 and 212. The second copper layer can be in direct contact with the fluid 250 to achieve good thermal conductivity. The second copper layer can be electrically isolated from the internal current path of the device 200. However, the DBC component can be thicker than a single conductive element, so it may be desirable to use a single conductive element.

[0065] The fluid cooling elements 240-242 can be configured to carry a fluid 250 through the device 200 to remove heat from the switches 210 and 212. The fluid 250 can be a gas or a liquid, such as liquid water or carbon dioxide gas. The fluid cooling elements 240-242 can include tubes, cavities, or channels that carry the fluid 250. The material of the tubes, cavities, or channels of the fluid cooling elements can be designed to conduct heat but not conduct electricity. The fluid cooling elements 240-242 can absorb heat from components of the device 200 such as the switches 210 and 212 and the conductive elements 220, 222, 230, and 232.

[0066] Device 200 may be configured to receive fluid 250 at interface 252. Fluid cooling elements 240-242 may be configured to deliver fluid 250 to interface 254. Interfaces 252 and 254 may be holes in a surface of device 200, which in some examples have an opening diameter of eight to ten millimeters. Examples of interfaces 252 and 254 are shown in FIG. 9 as interface 952, and are shown in FIG. Fig.15 1552. An external device such as a pump or a radiator can deliver water to the interface 252 and / or the interface 254.

[0067] Figure 3 is a conceptual block diagram illustrating an apparatus 300 including two parts 360A and 360B according to some examples of the present disclosure, wherein each of parts 360A and 360B includes a cooling element 340A and 340B. Each of parts 360A and 360B can be configured to operate as a phase in a multi-phase power converter. Figure 3 In the example of FIG. 3 , the device 300 includes two phases, wherein the first phase is portion 360A and the second phase is portion 360B.

[0068] Portion 360A may include a first half-bridge circuit including switches 310A and 312A. The first half-bridge circuit may generate a first output signal at interconnection elements 320A and 322A, which may be electrically connected to form a C-shaped interconnection element. Portion 360B may include a second half-bridge circuit configured to generate a second output signal at interconnection elements 320B and 322B. Apparatus 300 may be configured to deliver the first output signal and the second output signal to an electrical load, such as a motor, a light source, an electronic device, or any other suitable electrical load.

[0069] Cooling elements 340A and 340B may be connected in series such that fluid 350 flows first through cooling element 340A and then through cooling element 340B. Cooling elements 340A and 340B may be a single cooling element that extends through both portions 360A and 360B.

[0070] Each of the portions 360A and 360B may be a submodule that may be combined with other submodules to form a larger device. For example, a three-phase device may be constructed by positioning three submodules between the interconnecting elements of a C-shaped interconnecting element. Each submodule may include a half-bridge circuit in this example. Additionally, six submodules may be positioned between the interconnecting elements of the C-shaped interconnecting element to form a six-pick device including three H-bridge circuits, each of which includes two submodules, or three half-bridge circuits, each of which includes two submodules connected in parallel.

[0071] Figure 4A 4 is a conceptual block diagram illustrating an apparatus 400A including a printed circuit board (PCB) 470A and four electrical interfaces 480A, 482A, 484A, and 486A according to some examples of the present disclosure. PCB 470A can be configured to transmit control signals to switches 410A and 412A through connections 490A and 492A to control the operation of switches 410A and 412A. PCB 470A can use the control signals to open and close switches 410A and 412A. Examples of interconnects 490A and 492A are shown in FIG. Figure 5 is shown as signal pin 590, at Figures 6A-6C is shown as signal pin 690, at Figure 7 are shown as signal pins 790 and 792 and are Figures 10A-10C Shown are signal pins 1090A and 1090B.

[0072] PCB 470A may be configured to receive electrical power through interface 486A to drive logic circuits in PCB 470A. Device 400A may include a molding compound and / or thermoplastic material that at least partially encapsulates PCB 470A. However, the molding compound and / or thermoplastic material may not cover electrical interface 486A so that an external device can be electrically connected to interface 486A. Device 400A may include driver electronics (e.g., gate driver logic circuits) mounted on PCB 470A and configured to generate control signals for switches 410A and 412A.

[0073] PCB 470A may be configured to operate as an internal redistribution element toward a standardized interface, such as Fig.15 Interface 486A or interface 1586 in , which is an example of a standardized interface. Device 400A may include different redistribution elements, such as a lead frame structure, an intelligent power module, and / or another element with switching or sensing functions. There may be separate redistribution elements for the high-side switch and the low-side switch, or device 400A may include a single redistribution element for all switches.

[0074] Interface 480A can be configured to deliver an output signal to an external device. Switches 410A and 412A can be configured to operate as a half-bridge circuit or as part of an H-bridge circuit to generate an output signal at interconnection elements 420A and 422A. Each of interfaces 482A and 484A can be configured to receive a power supply signal, such as a reference ground or a high-side power supply signal. Interfaces 480A, 482A, and 484A can include conductive surfaces or conductive holes to form an electrical connection with external components. Interfaces 480A, 482A, and 484A can be designed to allow welding wires or other electrical conductors to form an electrical connection.

[0075] Figure 4B 4 is a conceptual block diagram showing a device 400B including interconnection elements 420B and 422B positioned on the outside of two switches 410B and 412B according to some examples of the present disclosure. The interconnection elements 420B and 422B may be electrically connected to form a C-shaped interconnection element and configured to deliver output signals to the interface 480B. The power supply elements 430B and 432B may be positioned on the inside of the switches 410B and 412B and adjacent to the cooling element 441B. The device 400B may include a material between the power supply elements 430B and 432B and the cooling element 441B to provide electrical insulation. Fig.11 and Fig.12 An example of a device 400B is depicted having C-shaped interconnect elements on the outside of switches 410B and 412B.

[0076] Fig.12 Interconnect elements 420B and 422B and interconnect elements 1220A- 1220C in FIG. 4 are examples of C-shaped interconnect elements positioned on the outside of the two switches. Figure 7 The interconnecting elements 420A and 422A, the interconnecting elements 720 and 722, and Figure 8 The interconnection element 820 in FIG. 8 is an example of a C-shaped interconnection element positioned inside the two switches.

[0077] Figure 4C and Figure 4E is a conceptual block diagram illustrating a C-shaped interconnect element according to some examples of the present disclosure. Figure 4C Inboard conductive elements 430C and 422C are shown electrically connected to operate as output elements configured to deliver output signal 460C. Figure 4D 4 is a circuit diagram showing a half-bridge circuit including switches 410C and 412C. Figure 4D Switches 410C and 412C are shown as bipolar transistors, but switches 410C and 412C may be FET transistors, IGBTs, or any other form of transistor.

[0078] Figure 4E Outer conductive elements 420E and 432E are shown electrically connected to operate as output elements configured to deliver output signal 460E. Figure 4C Configuring outer conductive elements 420E and 432E to carry output signal 460E increases the distance that output signal 460E travels and reduces the distance that power sources 450E and 452E travel, compared to the configuration in FIG. Figure 4E The configuration (output element on the outside) can be compared Figure 4C The configuration (output element on the inside) has lower stray inductance and lower impedance. These electrical characteristics may be desirable for a semiconductor device.

[0079] Figure 5 5 is a conceptual block diagram illustrating a switch 510 encapsulated in a material 580 according to some examples of the present disclosure. The high-side switch 510 can be configured to receive a control signal via a signal pin 590 and a wire bond 592, which can include aluminum, copper, and / or another conductive material. The signal pin 590 can also be configured to send signals representing temperature and current magnitude for temperature sensing and current sensing to components outside the material 580 (e.g., see Figures 6A-6C Pin 690 as shown in Figures 10A-10C The high-side switch 510 may be configured to conduct power between load terminals, wherein a first load terminal is electrically connected to the high-side power element 530 and a second load terminal is electrically connected to the interconnect element 520 .

[0080] The high-side switch 510 can be electrically connected to the interconnection element 520 through the spacer attachment layer 566B, the spacer 560, the connection layer 566A and the optional mounting post 564A. The high-side switch 510 can be electrically connected to the high-side power element 530 through the tube die attachment layer 566C, the lead frame 562, the connection layer 566D and the optional mounting post 564B. The connection layers 566A and 566D and the attachment layers 566B and 566C can include conductive materials such as solder or sintered materials. The mounting posts 564A and 564B can be formed by stamping.

[0081] Material 580 may include a thermally conductive and electrically insulating material such as a thermosetting polymer, ceramic, or any other suitable material. Figures 1C-1F Materials 180C-180F shown in FIG. 5 are examples of material 580. Material 580 may partially or completely encapsulate high-side switch 510 to electrically insulate high-side switch 510 while providing thermal conduction.

[0082] The spacer 560 and the lead frame 562 can be configured to conduct power between the load terminal of the high-side switch 510 and the components 520 and 530. The spacer 560 and the lead frame 562 can be attached to the high-side switch 510 by welding, sintering, pasting, taping, gluing, diffusion bonding, and / or another method. Examples of the spacer 560 and the lead frame 562 include Figure 6B and Figure 6C The spacer 660 and Fig. 10B and Fig. 10C The spacer 1060 in FIG. 5 may include copper, AlSiC (aluminum matrix with silicon carbide particles), molybdenum-copper, and / or any other conductive material.

[0083] Interconnect element 520 may be separated from intermediate cooling element 541 by material 570, which may include a thermoplastic material or another thermally conductive and electrically insulating material. High-side power element 530 may be separated from high-side cooling element 540 by material 570. Distances 500 and 502 through material 570 may be in a range from two hundred microns to one millimeter, in a range from three hundred microns to eight hundred microns, or in a range of up to two millimeters. These distance ranges may also be applicable to Figure 5 The low side switch is not shown.

[0084] Material 570 can completely encapsulate Figure 5 5, including switch 510, interconnect element 520, power element 530, and cooling elements 540 and 541. Material 570 may partially encapsulate some components of the device, such as an interface for electrical signals and an interface for cooling fluid.

[0085] Figures 6A-6C is a perspective view of a switch 610 encapsulated in a material 680 according to some examples of the present disclosure. Fig. 6A A first stage of the assembly process is depicted, wherein switch 610 and diode 614 are positioned on and electrically connected to conductive element 620. Signal pin 690 may be electrically connected to switch 610 and conductive element 620. Signal pin 690 may include connections for temperature sensing and current sensing.

[0086] Figure 6B Depicted is a spacer 660 attached to the switch 610 and a second spacer attached to the diode 614. The spacer 660 can prevent the cooling material from directly contacting the surface of the switch 610, which reduces the risk of reliability issues due to ionic contamination. Figure 6CA material 680 is depicted formed over the switch 610, the diode 614, and the conductive element 620. The material 680 may partially encapsulate the conductive element 620, the spacer 660, and the signal pin 690 to allow electrical connection to external components, such as Figure 7 and Figure 8 The spacer 660 may be exposed on the top of the module 600 , and the conductive element 620 may be exposed on the bottom of the module 600 .

[0087] Figure 7 7 is a side view of two switches 710 and 712 electrically connected by two interconnection elements 720 and 722 according to some examples of the present disclosure. Interconnection element 720 may be electrically connected to switch 710 through spacer 762, and interconnection element 722 may be electrically connected to switch 712 through spacer 764. Interconnection elements 720 and 722 may be electrically connected through conductive element 724 to form a C-shaped interconnection element electrically connected to interface 780. Interface 780 may be configured to form an electrical connection with an external device to convey output signals generated by switches 710 and 712.

[0088] Power element 730 may be electrically connected to interface 782, and power element 732 may be electrically connected to interface 784. Power elements 730 and 732 may also be connected to standardized interface elements such as bolts. Interface 782 may be electrically isolated from interface 784, although Figure 7 Interfaces 782 and 784 are shown as overlapping. Fig.11 and Fig.12 Examples of interfaces that overlap in two dimensions (eg, y-axis and z-axis) but are offset in a third dimension (eg, x-axis) are shown.

[0089] A cooling element may be positioned between interconnect elements 720 and 722 to remove heat generated by switches 710 and 712. By forming a C-shaped interconnect element around the cooling element, the surface area of ​​the interconnect element that is close to the cooling element may be increased. Increasing the surface area may result in an increase in the heat removed by the cooling element.

[0090] Figure 8 is a perspective view of a semiconductor sub-module including interconnect elements 820A- 820C positioned on the inside of a switch according to some examples of the present disclosure. Figure 8 Twelve switches assembled in a six-select arrangement are depicted. Each of the sections 860A-860C may include two high-side switches and two low-side switches. Each of the sections 860A-860C may be configured as a half-bridge circuit, wherein the two high-side switches are electrically connected in parallel and the two low-side switches are electrically connected in parallel to double the flow of current. Alternatively, each of the sections 860A-860C may be configured as an H-bridge circuit.

[0091] Each of the portions 860A- 860C may include one of the interconnection elements 820A- 820C that is electrically isolated from the other interconnection elements. Figure 8 The device can be a three-phase power converter in which each of the portions 860A-860C generates an independent output signal. However, all six high-side switches can be electrically connected to a single high-side power element ( Figure 8 All six low-side switches can be electrically connected to a single low-side power element ( Figure 8 not shown).

[0092] The interconnection elements 820A-820C may be electrically connected to the switch by welding, sintering, pasting, taping, gluing, diffusion bonding, and / or thermal interface material (TIM). The interconnection elements 820A-820C may include a conductive material such as copper or aluminum. The interconnection elements 820A-820C may be manufactured using bending and stamping techniques.

[0093] Fig. 9A and Fig. 9B 9 is a perspective view of a final module encapsulated in material 970 having electrical interfaces 980A-980C, 982, and 984 and fluid interface 952 according to some examples of the present disclosure. Fluid interface 952 can be configured to receive fluid from an external device such as a tube or pipe. Device 900 can include a second fluid interface configured to output fluid to another external device. Material 970 can include a thermoplastic material that can form cooling fins on the surface of device 900, such as Fig. 9A and Fig. 9B As shown. Electrical interfaces 980A-980C may be configured to generate output signals, such as three phases of signals for driving an electrical load. Electrical interfaces 982 and 984 may be configured to receive a high-side power supply and a low-side power supply.

[0094] Device 900 can be designed to be easy to install because the user may only need to connect the fluid interface and the electrical interface to the external device and the connector. Device 900 can be a simple plug-and-play solution with a small overall volume. The customer or user may only need to connect the interface to the external device because all the components of device 900 are combined into one housing. Sheaths 990A and 990B are positioned in the corners of device 900 and can be configured to receive cooling fluid.

[0095] Figures 10A-10C is a perspective view of a switch encapsulated in a material according to some examples of the present disclosure. Fig. 10A1010A-1010D are positioned on and electrically connected to the conductive element 1020. The signal pin 1090 may be electrically connected to the switch 1010A-1010D, such as Fig. 10B shown. Fig. 10B Also depicted is the attachment of spacers 1060A- 1060D to switches 1010A- 1010D. Fig. 10C A material 1080 is depicted formed on the switches 1010A-1010D, the conductive element 1020, and the signal pins 1090A and 1090B. The material 1080 may partially encapsulate the conductive element 1020, the spacers 1060A-1060D, and the signal pins 1090A and 1090B to allow electrical connection to external components, such as Fig.11 , Fig.12 , Fig.14A and Fig. 14B as shown in .

[0096] Fig.11 is a perspective view of a semiconductor submodule including three sections 1160A-1160C and twelve switches according to some examples of the present disclosure. Figure 7 and Figure 8 Instead, the power elements 1130 and 1132 are positioned on the inside of the switch, rather than on the outside of the switch. The intermediate cooling element may be positioned adjacent to and inside the power elements 1130 and 1132. The power element 1130 may be electrically connected to Fig.11 The load terminals of all six high-side switches, and the power element 1132 can be electrically connected to Fig.11 The load terminals of all six low-side switches.

[0097] Fig.11 The switch is shown as having a load terminal in the positive z-axis direction and a load terminal in the negative z-axis direction. Each of the load terminals may have an exposed pad on the surface of the semiconductor die that may be electrically connected to a conductive element, such as a copper layer. The signal pin of the switch may be exposed toward the side of the switch in the negative y-axis direction.

[0098] Fig.12 1 is a perspective view of a semiconductor submodule including interconnection elements 1220A-1220C positioned on the outside of a switch according to some examples of the present disclosure. Each of the interconnection elements 1220A-1220C may include a C-shaped interconnection element positioned on the outside of the switch, which is similar to Figure 7 and Figure 8 The interconnecting elements 720, 722, 724 and 820A-820C are opposite.

[0099] Fig.131 is an exploded view of two half shells 1370A and 1370B of a housing for a semiconductor submodule according to some examples of the present disclosure. The half shells 1370A and 1370B and the material 1370C may include a thermally conductive and electrically insulating thermoplastic material. The half shell 1370B includes fluid interfaces 1352 and 1354. The half shells 1370A and 1370B may be fitted together so that there is an opening for a signal pin of the device. The material 1370C may be configured to cover the opening while allowing connection to the signal pin.

[0100] Fig.14A and Fig. 14B 14 is a perspective view of a semiconductor submodule in a housing 1470 according to some examples of the present disclosure. Housing 1470 includes fluid interfaces 1452 and 1454 for inputting and outputting fluid for cooling the elements. Housing 1470 also includes electrical interfaces 1480A-1480C, 1482, and 1484 for electrical output signals and power signals.

[0101] Fig.15 15 is a perspective view of housing 1570 having electrical interfaces 1580A-1580C, 1582, 1584, and 1586 and fluid interfaces 1552 and 1554 according to some examples of the present disclosure. Device 1500 may include electrically insulating covers for electrical interfaces 1580A-1580C, 1582, and 1584 to prevent accidental electrical connection to interfaces 1580A-1580C, 1582, and 1584. Fig.15 Electrical interface 1586 is depicted as a DB-25 connection, but electrical interface 1586 may include any other interface connection. In some examples, electrical interface 1586 may be configured to receive control signals for switches of device 1500. Electrical interface 1586 may be configured to communicate temperature sensing and current sensing.

[0102] The housing 1570 may be a second housing formed outside the first housing, such as the housing 1470 in FIG. 14. The first housing may expose the signal pins of the semiconductor module. The housing 1570 may surround the signal pins and the PCB electrically connected to the signal pins. The housing 1570 may also cover the conductive portions of the electrical interfaces 1580A-1580C, 1582, and 1584.

[0103] Fig.16 is a flow chart illustrating an exemplary technique for constructing a semiconductor module according to some examples of the present disclosure. Figure 1B The device 100B described in Fig.16 Although technologies such as Figure 2-15 Similar techniques can also be illustrated for other components of the device.

[0104] Fig.16The technique includes electrically connecting the high-side conductive element 120B to the first load terminal of the high-side switch 110B (1600). Fig.16 The technology also includes electrically connecting the low-side conductive element 122B to the first load terminal of the low-side switch 112B (1602). The electrical connection between the conductive elements 120B and 122B and the switches 110B and 112B can be formed by welding, sintering, pasting, taping, gluing, diffusion bonding, and / or thermal interface materials (TIM).

[0105] Fig.16 The technology also includes positioning the cooling element 140B so that the high-side conductive element 120B is positioned between the high-side switch 110B and the cooling element 140B, and the low-side conductive element 122B is positioned between the low-side switch 112B and the cooling element 140B (1604). By positioning one of the switches 110B and 112B on each side of the cooling element 140B, the heat removed by the cooling element 140B can be increased. The conductive elements 120B and 122B can conduct heat from the switches 110B and 112B to the cooling element 140B. The device 100B may include an electrically insulating material between each of the conductive elements 120B and 122B and the cooling element 140B.

[0106] Figures 6A-9B and Figure 10A-Figure 15 Two examples of devices for constructing the present disclosure are shown. Figures 6A-9B In the exemplary process of the device shown in FIG. 6 , the switch 610 can be electrically connected to the conductive element 620, the signal pin 690, and the diode 614. Then, the spacer 660 can be electrically connected to the switch 610, and the material 680 can be formed around the switch 610. Figure 7 As shown, switches 710 and 712 can then be electrically connected to conductive elements 720 and 722, which form a C-shaped interconnection element. Figure 8 As shown in , many switches can be electrically connected to more than one C-shaped interconnection element. Power elements 730 and 732 can then be electrically connected to the outer load terminals of switches 710 and 712. Cooling elements can then be formed on the inside of the C-shaped interconnection element. Material 970 can be formed around all components, and interfaces can be formed on the surface of material 970.

[0107] In some examples, Fig.16 Techniques include encapsulating components 110B and 120B in a layer of cooling material and encapsulating components 112B and 122B in a layer of cooling material. In addition to or as an alternative to positioning cooling element 140B, cooling material may be formed around components of device 100B.

[0108] Figure 17-Figure 20 Shows Figure 1A-Figure 15 For example, any device may also include Fig.17 Shell 1760, Fig.18 The first body 1800, Fig.19 Subjects of 1900 and 1990 and / or Fig. 20 Any device may also include a body 2000 and 2090. Fig.19 interconnections 1950, 1952 and 1960 and interfaces 1970 and / or Fig. 20 Interconnects 2050 and 2060 and signal port 2070 .

[0109] Fig.17 1 is a conceptual block diagram illustrating two switches 1710 and 1712 enclosed in a cooling material 1770 surrounded by a housing 1760 according to some examples of the present disclosure. The housing 1760 can be used to provide additional electrical isolation for components enclosed by the cooling material 1770. The housing 1760 can include a thermally conductive material to allow heat to be transferred from the cooling material 1770 to the external environment. An example of the cooling material 1770 is manufactured by 3M Company of Maplewood, Minnesota.

[0110] Fig.18 1 is a conceptual block diagram showing a first body 1800 according to some examples of the present disclosure, the first body 1800 having a control signal pin 1840, a power pin, and an output pin 1850 extending from the first body 1800. The exterior of the first body 1800 may be composed of a cooling material, and the pins 1840 and 1850 extend out for electrical connection. The pin 1840 may be electrically connected to a control terminal of a switch in the first body 1800. The pin 1850 may be electrically connected to a load terminal of the switch via a conductive element.

[0111] Fig.19 is a conceptual block diagram illustrating a second body 1990 enclosing a first body 1900 according to some examples of the present disclosure, wherein interconnections 1950, 1952, and 1960 and an interface 1970 extend from the second body 1990. Each of the interconnections 1950, 1952, and 1960 may include a screw hole. Fig. 20 2000, wherein interconnects 2050 and 2060, signal port 2070, and fluid interfaces 2052 and 2054 extend from second body 2090 according to some examples of the present disclosure. Each of interconnects 2060 can be electrically connected to three output nodes, wherein each output node represents a phase (e.g., Fig.14A Electrical interface 1480A-1480C).

[0112] The following numbered examples illustrate one or more aspects of the present disclosure.

[0113] Example 1. A device includes a high-side switch, a first high-side conductive element electrically connected to a first load terminal of the high-side switch, and a second high-side conductive element electrically connected to a second load terminal of the high-side switch. The device also includes a cooling material layer encapsulating the high-side switch, the first high-side conductive element, and the second high-side conductive element. The device also includes a low-side switch, a first low-side conductive element electrically connected to the first load terminal of the low-side switch, and a second low-side conductive element electrically connected to the second load terminal of the low-side switch. The cooling material layer encapsulates the low-side switch, the first low-side conductive element, and the second low-side conductive element.

[0114] Example 2. The apparatus of Example 1, wherein the first high-side conductive element is positioned on a side of the high-side switch facing the low-side switch, and the first low-side conductive element is positioned on a side of the low-side switch facing the high-side switch. The first high-side conductive element is electrically connected to a high-side power supply, and the first low-side conductive element is electrically connected to the low-side power supply. The second high-side conductive element is electrically connected to the second low-side conductive element to form a C-shaped interconnect element.

[0115] Example 3. The device according to Examples 1-2 or any combination thereof, further comprising a first body, the first body comprising a cooling material, a high-side switch, a first high-side conductive element, a second high-side conductive element, a low-side switch, a first low-side conductive element, and a second low-side conductive element. The device also includes a second body surrounding the first body, the second body comprising an interconnection element configured to receive a high-side power supply, receive a low-side power supply, and transmit an output signal.

[0116] Example 4. The apparatus of Examples 1-3 or any combination thereof, wherein the second body further comprises a PCB, the PCB comprising an electrical interface at least partially exposed on the second body, wherein the PCB is configured to transmit a control signal to the high-side switch and the low-side switch based on a signal received at the electrical interface.

[0117] Example 5. The device of examples 1-4 or any combination thereof, wherein the cooling material comprises a thermoplastic material.

[0118] Example 6. The apparatus of Examples 1-5 or any combination thereof, wherein the first high-side conductive element is positioned on a side of the high-side switch facing the low-side switch, and the first low-side conductive element is positioned on a side of the low-side switch facing the high-side switch, and the cooling material layer separates the first low-side conductive element and the first high-side conductive element by a distance of less than one millimeter.

[0119] Example 7. An apparatus includes a cooling element, a high-side switch, and a high-side conductive element electrically connected to a load terminal of the high-side switch, wherein the high-side conductive element is positioned between the high-side switch and the cooling element. The apparatus also includes a low-side switch and a low-side conductive element electrically connected to the load terminal of the low-side switch, wherein the low-side conductive element is positioned between the low-side switch and the cooling element.

[0120] Example 8. The apparatus of Example 7, wherein the cooling element is an intermediate cooling element, wherein the high-side conductive element is an intermediate high-side conductive element, and wherein the low-side conductive element is an intermediate low-side conductive element. The apparatus further comprises a high-side cooling element, an outer high-side conductive element positioned between the high-side switch and the high-side cooling element, a low-side cooling element, and an outer low-side conductive element positioned between the low-side switch and the low-side cooling element.

[0121] Example 9. The apparatus of examples 7-8 or any combination thereof, wherein the middle high-side conductive element is electrically connected to the middle low-side conductive element to form a C-shaped interconnect element, the outer high-side conductive element is electrically connected to the high-side power supply, and the outer low-side conductive element is electrically connected to the low-side power supply.

[0122] Example 10. The apparatus of examples 7-9 or any combination thereof, wherein the outer high-side conductive element is electrically connected to the outer low-side conductive element to form a C-shaped interconnect element, the middle high-side conductive element is electrically connected to the high-side power supply, and the middle low-side conductive element is electrically connected to the low-side power supply.

[0123] Example 11. The apparatus of Examples 7-10 or any combination thereof, wherein the high-side switch, the low-side switch, and the C-shaped interconnection element comprise a first phase portion. The apparatus further comprises a second phase portion and a second C-shaped interconnection element, the second phase portion comprising a second high-side switch, a second low-side switch, the second C-shaped interconnection element comprising a second outer high-side conductive element electrically connected to a first load terminal of the second high-side switch and positioned between the second high-side switch and the high-side cooling element. The second C-shaped interconnection element further comprises a second outer low-side conductive element electrically connected to a first load terminal of the second low-side switch and positioned between the second low-side switch and the low-side cooling element. The intermediate high-side conductive element is electrically connected to a second load terminal of the second high-side switch and positioned between the second high-side switch and the intermediate cooling element, and the intermediate low-side conductive element is electrically connected to a second load terminal of the second low-side switch and positioned between the second low-side switch and the intermediate cooling element.

[0124] Example 12. The apparatus of Examples 7-11 or any combination thereof, further comprising a thermosetting polymer material, wherein the high-side switch is encapsulated in the thermosetting polymer material, and the low-side switch is encapsulated in the thermosetting polymer material.

[0125] Example 13. The device of Examples 7-12 or any combination thereof, further comprising a thermoplastic material, wherein the thermoplastic material encapsulates the cooling element, the high-side conductive element, and the low-side conductive element, and the thermoplastic material at least partially encapsulates the device.

[0126] Example 14. The device of Examples 7-13 or any combination thereof, wherein the thermoplastic material separates the cooling element from the high-side conductive element so that the cooling element is not in direct contact with the high-side conductive element. The thermoplastic material separates the cooling element from the low-side conductive element so that the cooling element is not in direct contact with the low-side conductive element.

[0127] Example 15. The apparatus of Examples 7-14 or any combination thereof, wherein the distance between the cooling element and the high-side conductive element separated by the thermoplastic material is in a range from two hundred microns to one millimeter. The distance between the cooling element and the low-side conductive element separated by the thermoplastic material is in a range from two hundred microns to one millimeter.

[0128] Example 16. The apparatus of Examples 7-15 or any combination thereof, further comprising a PCB comprising an electrical interface, wherein the PCB is configured to deliver a control signal to the high-side switch and to deliver a control signal to the low-side switch. The thermoplastic material partially encapsulates the PCB such that the thermoplastic material does not cover the electrical interface.

[0129] Example 17. The device of Examples 7-16 or any combination thereof, further comprising a first fluid interface and a second fluid interface, wherein the cooling element is configured to transport the fluid from the first fluid interface through the device to the second fluid interface. The cooling element is configured to transport the fluid from the first fluid interface through the device to the second fluid interface.

[0130] Example 18. A method includes electrically connecting a first high-side conductive element to a first load terminal of a high-side switch and electrically connecting a second high-side conductive element to a second load terminal of the high-side switch. The method also includes electrically connecting a first low-side conductive element to the first load terminal of the low-side switch and electrically connecting a second low-side conductive element to the second load terminal of the low-side switch. The method also includes encapsulating the high-side switch, the first high-side conductive element, and the second high-side conductive element in a layer of cooling material, and encapsulating the low-side switch, the first low-side conductive element, and the first high-side conductive element in the layer of cooling material.

[0131] Example 19. The method of Example 18, positioning the cooling element such that the first high-side conductive element is positioned between the high-side switch and the cooling element, and such that the first low-side conductive element is positioned between the low-side switch and the cooling element. The method further includes encapsulating the cooling element in the cooling material layer.

[0132] Example 20. The method of Example 19, wherein positioning the cooling element comprises positioning the cooling element such that the cooling element is not in direct contact with the high-side conductive element and such that the cooling element is not in direct contact with the low-side conductive element.

[0133] Example 21. A device includes a high-side cooling element, an intermediate cooling element, and a low-side cooling element. The device also includes: a high-side switch; an intermediate high-side conductive element electrically connected to a first load terminal of the high-side switch, wherein the intermediate high-side conductive element is positioned between the high-side switch and the intermediate cooling element; and an outer high-side conductive element electrically connected to a second load terminal of the high-side switch, wherein the outer high-side conductive element is positioned between the high-side switch and the high-side cooling element. The device also includes: a low-side switch; an intermediate low-side conductive element electrically connected to a load terminal of the low-side switch, wherein the intermediate low-side conductive element is positioned between the low-side switch and the intermediate cooling element; and an outer low-side conductive element electrically connected to a second load terminal of the low-side switch, wherein the outer low-side conductive element is positioned between the low-side switch and the low-side cooling element. The device includes a thermoplastic material that encapsulates the high-side cooling element, the intermediate cooling element, the low-side cooling element, the high-side switch, the low-side switch, the intermediate high-side conductive element, the outer high-side conductive element, the intermediate low-side conductive element, and the outer low-side conductive element.

[0134] Various examples of the disclosure are described. Any combination of the described systems, operations, or functions is contemplated. These and other examples are within the scope of the following claims.

Claims

1. A semiconductor device comprising: High-side switch; a first high-side conductive element electrically connected to a first load terminal of the high-side switch; a second high-side conductive element electrically connected to a second load terminal of the high-side switch; a layer of cooling material encapsulating the high-side switch, the first high-side conductive element, and the second high-side conductive element; Low-side switch; a first low-side conductive element electrically connected to a first load terminal of the low-side switch; a second low-side conductive element electrically connected to a second load terminal of the low-side switch, wherein the layer of cooling material encapsulates the low-side switch, the first low-side conductive element, and the second low-side conductive element; a first body comprising a cooling material, the high-side switch, the first high-side conductive element, the second high-side conductive element, the low-side switch, the first low-side conductive element, and the second low-side conductive element; as well as a second body surrounding the first body, the second body including interconnect elements configured to receive a high-side power supply, receive a low-side power supply, and deliver an output signal, Wherein, the second body further includes: a printed circuit board (PCB) comprising an electrical interface, the electrical interface being at least partially exposed on the second body, wherein the PCB is configured to: delivering a control signal to the high-side switch based on a signal received at the electrical interface; and A control signal is delivered to the low-side switch based on a signal received at the electrical interface.

2. The semiconductor device according to claim 1, wherein the first high-side conductive element is positioned on a side of the high-side switch facing the low-side switch, wherein the first low-side conductive element is positioned on a side of the low-side switch facing the high-side switch, wherein the first high-side conductive element is electrically connected to a high-side power supply, wherein the first low-side conductive element is electrically connected to a low-side power supply, and The second high-side conductive element is electrically connected to the second low-side conductive element to form a C-shaped interconnection element. The semiconductor device according to claim 1 , wherein the cooling material comprises a thermoplastic material.

4. The semiconductor device according to claim 1, wherein the first high-side conductive element is positioned on a side of the high-side switch facing the low-side switch, wherein the first low-side conductive element is positioned on a side of the low-side switch facing the high-side switch, and The cooling material layer separates the first low-side conductive element and the first high-side conductive element by a distance of less than one millimeter.

5. A semiconductor device comprising: Cooling elements; High-side switch; a high-side conductive element electrically connected to a load terminal of the high-side switch, wherein the high-side conductive element is positioned between the high-side switch and the cooling element; Low-side switch; a low-side conductive element electrically connected to a load terminal of the low-side switch, wherein the low-side conductive element is positioned between the low-side switch and the cooling element; a thermoplastic material, wherein the thermoplastic material encapsulates the cooling element, the high-side conductive element, and the low-side conductive element, and wherein the thermoplastic material at least partially encapsulates the device; as well as A printed circuit board (PCB) comprising an electrical interface, wherein the PCB is configured to: transmit a control signal to the high-side switch; and transmit a control signal to the low-side switch, and wherein the thermoplastic material partially encapsulates the PCB so that the thermoplastic material does not cover the electrical interface.

6. The semiconductor device of claim 5, wherein the cooling element is an intermediate cooling element, wherein the high-side conductive element is an intermediate high-side conductive element, wherein the low-side conductive element is an intermediate low-side conductive element, the device further comprising: High side cooling element; an outer high-side conductive element positioned between the high-side switch and the high-side cooling element; Low side cooling element; as well as An outer low-side conductive element is positioned between the low-side switch and the low-side cooling element.

7. The semiconductor device according to claim 6, wherein the intermediate high-side conductive element is electrically connected to the intermediate low-side conductive element to form a C-shaped interconnect element, wherein the outer high-side conductive element is electrically connected to a high-side power supply, and The outer low-side conductive element is electrically connected to a low-side power supply.

8. The semiconductor device according to claim 6, wherein the outer high-side conductive element is electrically connected to the outer low-side conductive element to form a C-shaped interconnection element, wherein the intermediate high-side conductive element is electrically connected to a high-side power supply, and The intermediate low-side conductive element is electrically connected to a low-side power supply.

9. The semiconductor device of claim 8, wherein the high-side switch, the low-side switch, and the C-shaped interconnection element comprise a first phase portion, the device further comprising a second phase portion, the second phase portion comprising: a second high-side switch; a second low-side switch; as well as A second C-shaped interconnection element comprising: a second outer high-side conductive element electrically connected to the first load terminal of the second high-side switch and positioned between the second high-side switch and the high-side cooling element; as well as a second outer low-side conductive element electrically connected to the first load terminal of the second low-side switch and positioned between the second low-side switch and the low-side cooling element, wherein the intermediate high-side conductive element is electrically connected to a second load terminal of the second high-side switch and is positioned between the second high-side switch and the intermediate cooling element, and Wherein the intermediate low-side conductive element is electrically connected to the second load terminal of the second low-side switch and is positioned between the second low-side switch and the intermediate cooling element.

10. The semiconductor device according to claim 5, further comprising a thermosetting polymer material, wherein the high-side switch is encapsulated in the thermosetting polymer material, and Wherein the low-side switch is encapsulated in the thermosetting polymer material.

11. The semiconductor device according to claim 5, wherein the thermoplastic material separates the cooling element from the high-side conductive element such that the cooling element is not in direct contact with the high-side conductive element, and The thermoplastic material separates the cooling element from the low-side conductive element such that the cooling element is not in direct contact with the low-side conductive element.

12. The semiconductor device according to claim 11, wherein the distance between the cooling element and the high-side conductive element separated by the thermoplastic material is in the range of from two hundred microns to one millimeter, and The distance between the cooling element and the low-side conductive element separated by the thermoplastic material is in the range from two hundred microns to one millimeter.

13. The semiconductor device of claim 5, further comprising a first fluid interface and a second fluid interface, wherein the cooling element is configured to transport fluid from the first fluid interface through the device to the second fluid interface.

14. A method for forming a semiconductor device, comprising: electrically connecting a first high-side conductive element to a first load terminal of the high-side switch; electrically connecting a second high-side conductive element to a second load terminal of the high-side switch; electrically connecting a first low-side conductive element to a first load terminal of the low-side switch; electrically connecting a second low-side conductive element to a second load terminal of the low-side switch; encapsulating the high-side switch, the first high-side conductive element, and the second high-side conductive element in a layer of cooling material; encapsulating the low-side switch, the first low-side conductive element, and the first high-side conductive element in the cooling material layer; providing a first body including a cooling material, the high-side switch, the first high-side conductive element, the second high-side conductive element, the low-side switch, the first low-side conductive element, and the second low-side conductive element; as well as providing a second body surrounding the first body, the second body including an interconnection element configured to receive a high-side power supply, receive a low-side power supply, and transmit an output signal, Wherein, the second body further includes: a printed circuit board (PCB) comprising an electrical interface, the electrical interface being at least partially exposed on the second body, wherein the PCB is configured to: delivering a control signal to the high-side switch based on a signal received at the electrical interface; and A control signal is delivered to the low-side switch based on a signal received at the electrical interface.

15. The method according to claim 14, further comprising: positioning a cooling element such that the first high-side conductive element is positioned between the high-side switch and the cooling element, and such that the first low-side conductive element is positioned between the low-side switch and the cooling element; as well as The cooling element is enclosed in the layer of cooling material. 16 . The method of claim 15 , wherein positioning the cooling element comprises positioning the cooling element such that the cooling element is not in direct contact with the high-side conductive element and such that the cooling element is not in direct contact with the low-side conductive element.

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