Hole injection material, hole injection layer comprising same, and OLED display panel
A technology of hole injection material and hole injection layer, which is applied in electrical components, circuits, organic chemistry, etc., can solve the problem of high work function, achieve the effects of improving electrical conductivity, preventing crystallization effect, and improving light extraction efficiency
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2019-12-31
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the field of preparation of organic light-emitting diodes, and in particular relates to a hole injection material, a hole injection layer containing it, an OLED display panel and electronic equipment. Background technique
[0002] An OLED display is a display made of organic light-emitting diodes. Due to its self-illumination, high contrast ratio, thin thickness, fast response speed, flexible panel, and simple structure, it is considered to be the next generation of flat-panel display technology. The structure of OLED devices is generally: cathode (Cathode) / electron injection layer (EIL) / electron transport layer (ETL) / light emitting layer (EML) / hole transport layer (HTL) / hole injection layer (HIL) / anode ( Anode). Energy level matching is very important for organic electroluminescent devices. The general structure of OLED devices mostly uses ITO as the anode, but its work function is relatively high, and the energy...
Examples
preparation example 1
[0047] A hole-injecting material, the structure of which is The preparation method comprises the following steps:
[0048]
[0049] Add a-1 (163.88mg, 1mmol), Pd(OAc) to the reaction flask 2 (8.96 mg, 4% mmol) and 2-dicyclohexylphosphine-2,4,6-triisopropylbiphenyl (XPhos) (19.07 mg, 8% mmol). Then a-2 (1.84g, 5mmol) was added dropwise into the reaction flask, and stirring was continued at 60°C for 6h after completion. The reaction solution was concentrated and passed through a column to obtain a-3.
[0050] Characterization:
[0051] NMR: 13 H NMR: (1H, 27.5); (1H, 33.5); (8H, 117.2); (2H, 136.5); (4H, 165.3);
[0052] Mass spectrum: 332.06.
preparation example 2
[0054] A hole-injecting material, the structure of which is The preparation method comprises the following steps:
[0055]
[0056] Add b-1 (163.88mg, 1mmol), Pd(OAc) to the reaction flask 2 (8.96 mg, 4% mmol) and 2-dicyclohexylphosphine-2,4,6-triisopropylbiphenyl (XPhos) (19.07 mg, 8% mmol). Then b-2 (2.58g, 5mmol) was added dropwise into the reaction flask, and stirring was continued at 60°C for 6h after completion. The reaction solution was concentrated and passed through a column to obtain b-3.
[0057] Characterization:
[0058] NMR: 13 H NMR: (1H, 27.5); (1H, 37.5); (4H, 88.9); (4H, 110.5); (4H, 116.4); (4H, 116.5); (4H, 117.2); (4H, 140.5) ;(8H,144.7);(8H,149.7);
[0059] Mass spectrum: 926.05.
preparation example 3
[0061] A hole-injecting material, the structure of which is The preparation method comprises the following steps:
[0062]
[0063] Add c-1 (163.88mg, 1mmol), Pd(OAc) to the reaction flask 2 (8.96 mg, 4% mmol) and 2-dicyclohexylphosphine-2,4,6-triisopropylbiphenyl (XPhos) (19.07 mg, 8% mmol). Then b-2 (2.55g, 5mmol) was added dropwise into the reaction flask, and stirring was continued at 60°C for 6h after completion. The reaction solution was concentrated and passed through a column to obtain b-3.
[0064] Characterization:
[0065] NMR: 13 H NMR: (1H, 27.5); (1H, 33.5); (4H, 107.7); (4H, 110.5); (4H, 117.2); (8H, 133.2); (4H, 138.5); (4H, 140.5) ;(8H,145.6);
[0066] Mass spectrum: 898.03.
