Semiconductor device

Abstract

The present application provides a semiconductor device. The first gate structure and the second gate structure in the semiconductor device each extend in a first direction. The first conductive contact and the second conductive contact each extend in the first direction, and the first conductive contact and the second conductive contact, as well as the first gate structure and the second gate structure, are separated in a second direction. The first isolation structure extends in the second direction and separates the first gate structure and the second gate structure. The second isolation structure extends in the second direction and separates the first conductive contact and the second conductive contact. The first gate structure is electrically coupled to a first electrical node. The second gate structure is electrically coupled to a second electrical node, and the first electrical node and the second electrical node are different. The first conductive contact is electrically coupled to the second electrical node. The second conductive contact is electrically coupled to the first electrical node.

Description

Technical Field

[0001] Embodiments of the present invention relate to various components in the fabrication of fin field effect transistors to implement capacitors on an integrated circuit. Background Art

[0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological advances in integrated circuit materials and design have enabled each generation of integrated circuits to have smaller and more complex circuits than the previous generation. However, these advances have also increased the complexity of forming and processing integrated circuits. To achieve this progress, similar developments are also required in the formation and processing of integrated circuits. In the evolution of integrated circuits, the functional density (such as the number of interconnect devices per unit chip area) generally increases as the geometric size of the components (such as the smallest components that can be produced by the process) shrinks.

[0003] Capacitors can be formed on an integrated circuit chip. However, the known methods of forming capacitors on an integrated circuit chip require additional chip area, which reduces the capacitance density per unit area. Thus, the device performance cannot be optimized.

[0004] Therefore, the existing capacitors on integrated circuits and their manufacturing methods generally meet the expected purposes, but are not fully applicable in every aspect. Summary of the Invention

[0005] A semiconductor device provided by an embodiment of the present invention includes: a first gate structure and a second gate structure, each extending in a first direction; a first conductive contact and a second conductive contact, each extending in the first direction, wherein the first conductive contact, the second conductive contact, the first gate structure, and the second gate structure are separated in a second direction, and the first direction is different from the second direction; a first isolation structure extending in the second direction, wherein the first isolation structure separates the first gate structure and the second gate structure; and a second isolation structure extending in the second direction, wherein the second isolation structure separates the first conductive contact and the second conductive contact; wherein the first gate structure is electrically coupled to a first electrical node; the second gate structure is electrically coupled to a second electrical node, and the first electrical node is different from the second electrical node; the first conductive contact is electrically coupled to the second electrical node; and the second conductive contact is electrically coupled to the first electrical node.

[0006] The device provided by an embodiment of the present invention includes: a dielectric structure; a plurality of gate structures located on the dielectric structure, wherein the gate structures each extend in a first direction; a plurality of conductive contacts located on the dielectric structure, wherein the conductive contacts each extend in the first direction; an interlayer dielectric layer located on the dielectric structure and located between the conductive contacts and the gate structures in a second direction, and the first direction is different from the second direction; a plurality of first isolation structures located between adjacent gate structures to separate adjacent gate structures in the first direction; a plurality of second isolation structures located between adjacent conductive contacts to separate adjacent conductive contacts in the first direction; a plurality of first metal lines electrically interconnected to a first group of gate structures and a first group of conductive contacts; and a plurality of second metal lines electrically interconnected to a second group of gate structures and a second group of conductive contacts, wherein the first metal lines and the second metal lines are staggered in the first direction; the first group of gate structures and the second group of gate structures are staggered in the first direction; and the first group of conductive contacts and the second group of conductive contacts are staggered in the first direction.

[0007] The method provided by an embodiment of the present invention includes: forming a plurality of gate structures each extending in a first direction on a dielectric structure; forming a plurality of conductive contacts each extending in the first direction on the dielectric structure, wherein the gate structures and the conductive contacts are separated from each other in a second direction, and the first direction is different from the second direction; etching trenches in a part of each gate structure; filling the trenches with one or more dielectric materials; forming one or more vias on the remaining part of each gate structure and each conductive contact; forming a plurality of metal lines on the vias, and the metal lines are electrically interconnected to the gate structures or the conductive contacts via individual vias, wherein the steps of forming the vias and forming the metal lines are performed such that a first group of metal lines is associated with a first electrical node; a second group of metal lines is associated with a second electrical node, and the first electrical node is different from the second electrical node; the first group of metal lines is electrically interconnected to a first group of gate structures and a first group of conductive contacts; and the second group of metal lines is electrically interconnected to a second group of gate structures and a second group of conductive contacts. Description of the Drawings

[0008] Figure 1 In one example, a perspective view of a fin field-effect transistor device.

[0009] Figure 2 In various embodiments of the present invention, a partial top view of a fin field-effect transistor device.

[0010] Figures 3 to 6 In various embodiments of the present invention, a cross-sectional view of a part of a fin field-effect transistor device at different manufacturing stages.

[0011] Figure 7 In various embodiments of the present invention, a partial top view of a fin field-effect transistor device on which a capacitor is formed.

[0012] Figure 8 With 9 is a cross-sectional view of a part of the fin field-effect transistor device shown in various embodiments of the present invention. Figure 7 shown in the fin field-effect transistor device shown in various embodiments of the present invention.

[0013] Figure 10 is a three-dimensional perspective view of a region of the fin field-effect transistor device shown in various embodiments of the present invention. Figure 7 shown in the fin field-effect transistor device shown in various embodiments of the present invention.

[0014] Figure 11 is a flowchart of a method for fabricating a fin field-effect transistor device in an embodiment of the present invention.

[0015] Symbol description:

[0016] Section line A-A’

[0017] L G Length

[0018] Tangents M-M’, N-N’

[0019] t ox Thickness

[0020] W fin Fin width

[0021] 50, 100, 100A, 100B, 100C Fin field-effect transistor devices

[0022] 60 Gate

[0023] 60A Gate member

[0024] 60B Gate dielectric layer member

[0025] 70 Source

[0026] 80 Drain

[0027] 120 Dielectric isolation structure

[0028] 150A, 150B Fin structures

[0029] 200, 200A, 200B, 410, 411, 412, 413, 414, 415, 416, 417, 418, 419, 420, 421 Gate structures

[0030] 210, 210A, 210B Gate dielectric layers

[0031] 220, 220A, 220B Work function metal members

[0032] Filling metal components 230, 230A, 230B

[0033] Source / drain regions 250A, 250B

[0034] Etching process 260

[0035] Trench 270

[0036] Lateral dimension 275

[0037] Process 280

[0038] Air gap 290

[0039] Isolation structures 300, 500, 501

[0040] Selected region 400

[0041] Interlayer dielectric layer 425

[0042] Conductive contacts 430, 431, 432, 433, 434, 435, 436, 437, 438, 439, 440, 441, 442, 443, 444

[0043] Cut metal gate structures 510, 511, 512, 513, 514, 515, 516, 517

[0044] Cut trench contact structures 530, 531, 532, 533, 534, 535, 536, 537, 538, 539

[0045] Metal lines 550, 551, 552, 553, 554, 555, 556, 557, 558

[0046] Through-holes 570, 571, 572, 573, 574, 575, 576, 577, 578, 579, 580, 581, 582, 583, 584, 585, 586, 587, 588, 589, 590, 591, 592, 593, 594, 595, 596, 597, 598, 599, 600, 601, 602, 603, 604, 605, 606, 607, 608, 609, 610, 611

[0047] Units 650, 651, 652

[0048] Capacitors 700, 701, 702, 703, 704, 705, 706, 707, 708, 709, 710, 711, 712, 713, 714

[0049] Method 900

[0050] Steps 910, 920, 930, 940, 950, 960 Detailed implementation manners

[0051] It should be understood that the different embodiments or examples provided below can implement different structures of the present invention. The embodiments of the following specific components and arrangements are used to simplify the content of the present invention rather than limit the present invention. For example, the description of forming a first component on a second component includes embodiments where the two are in direct contact, or embodiments where there are other additional components between the two rather than in direct contact. On the other hand, multiple instances of the present invention may reuse the same reference numerals for the sake of simplicity, but elements with the same reference numerals in multiple embodiments and / or settings do not necessarily have the same corresponding relationships. In addition, various structures can be arbitrarily shown in different scales to simplify and clarify the drawings.

[0052] In addition, spatial relative terms such as "below", "beneath", "lower", "above", "higher", or similar terms can be used to simplify the description of the relative relationship between one element and another in the drawing. The spatial relative terms can extend to elements used in other directions and are not limited to the directions shown in the drawing. The element can also be rotated by 90° or other angles, so the directional terms are only used to illustrate the directions in the drawing.

[0053] In addition, when a numerical value or a description of a numerical range has terms such as "about", "approximately", or similar terms, unless otherwise specifically stated, it includes ±10% of the stated numerical value. For example, the term "about 5 nm" includes a size range between 4.5 nm and 5.5 nm.

[0054] Embodiments of the present invention belong to generating capacitors by an integrated circuit manufacturing method. In various embodiments of the present invention, multiple capacitors with increased density per unit area can be formed by the manufacturing methods of various microelectronic components in fin field-effect transistors. However, it can be understood that unless specifically defined in the claims, the application of the embodiments is not limited to a specific type of device only.

[0055] For example, the fin field-effect transistor device can be a complementary metal-oxide-semiconductor device, which includes a p-type metal-oxide-semiconductor fin field-effect transistor device and an n-type metal-oxide-semiconductor fin field-effect transistor device. In the semiconductor industry, the application of fin field-effect transistor devices is becoming more and more popular. Figure 1 Show a perspective view of a fin field-effect transistor device 50 in an example. The fin field-effect transistor device 50 is a non-planar multi-gate transistor, which is built on a substrate (such as a bulk substrate). A thin silicon-containing fin structure forms the main body of the fin field-effect transistor device 50. The fin has a fin width W fin . The gate 60 of the fin field-effect transistor device 50 surrounds the fin. The gate 60 has a length L G(depending on width or viewing angle). The gate 60 may include a gate member 60A and a gate dielectric layer member 60B. The gate dielectric layer member 60B has a thickness t ox . A portion of the gate 60 is located on a dielectric isolation structure such as shallow trench isolation. The source 70 and drain 80 of the fin field-effect transistor device 50 are formed in extensions of fins on both sides of the gate 60.

[0056] Compared with traditional metal-oxide-semiconductor field-effect transistor devices (also known as planar transistor devices), fin field-effect transistor devices offer various advantages. These advantages may include a more efficient crystal plane area, improved carrier mobility, and a process that can be compatible with the process of planar devices. Therefore, integrated circuits using fin field-effect transistor devices need to be designed for part or all of the integrated circuit chips.

[0057] Figure 2 is a partial top view of a fin field-effect transistor device 100, which includes functional transistor components such as a gate and source / drain regions. As Figure 2 shown, the fin field-effect transistor device 100 is fabricated on a substrate. In some embodiments, the substrate includes a semiconductor material such as silicon. In another embodiment, other suitable materials can also be used for the substrate. A semiconductor layer can be formed on the substrate. In one embodiment, the semiconductor layer includes crystalline silicon material. In other embodiments, the semiconductor can include silicon germanium. An implantation process (such as a counter punch-through implantation process) can be performed to implant a plurality of dopant ions into the semiconductor layer. In some embodiments, the dopant ions can include an n-type material such as arsenic or phosphorus. In other embodiments, the dopant ions can include a p-type material such as boron. The type of dopant ions depends on whether the desired device is an n-type metal-oxide-semiconductor or a p-type metal-oxide-semiconductor device. For illustrative purposes, the fin field-effect transistor device 100 includes at least a fin field-effect transistor device 100A and a fin field-effect transistor device 100B. The fin field-effect transistor device 100A and the fin field-effect transistor device 100B can both be n-type field-effect transistors or p-type field-effect transistors, or each can be an n-type field-effect transistor and a p-type field-effect transistor.

[0058] A dielectric isolation structure 120 such as shallow trench isolation is formed on a portion of the semiconductor layer. The fin field-effect transistor device 100 also includes a plurality of fin structures, such as a fin structure 150A belonging to the fin field-effect transistor device 100A and a fin structure 150B belonging to the fin field-effect transistor device 100B. The fin structures 150A and 150B can protrude upward along the Z direction, and the Z direction is perpendicular to Figure 2 the plane defined by the X direction and the Y direction as shown. In various embodiments, the fin structure 150A or 150B can include, but is not limited to, silicon, silicon germanium, germanium, III-V group semiconductor compounds, or graphene. As Figure 2 shown in the top view, the fin structures 150A and 150B are each along the X direction (andFigure 1 a long-shaped structure extending in the same X direction as shown.

[0059] The gate structure 200 is formed on the fin structures 150A and 150B (or partially surrounds the fin structures). The gate structure 200 includes the gate structure 200A used for the fin field-effect transistor device 100A and the gate structure 200B used for the fin field-effect transistor device 100B. The gate structures 200A and 200B each extend in Figure 2 the Y direction (e.g., the same Y direction as Figure 1 shown).

[0060] In some embodiments, the gate structure 200 is a high-k dielectric layer and metal gate structure. The formation method of the high-k dielectric layer and metal gate structure can be a gate replacement process, in which the dummy gate dielectric layer and the dummy gate are replaced by a high-k gate dielectric layer and a metal gate. The dielectric constant of the high-k dielectric material is greater than the dielectric constant of silicon dioxide (approximately 4). In one embodiment, the high-k gate dielectric layer includes hafnium oxide, and its dielectric constant is between approximately 18 and approximately 40. In other embodiments, the high-k gate dielectric layer may include zirconium oxide, yttrium oxide, lanthanum oxide, gadolinium oxide, titanium oxide, tantalum oxide, hafnium erbium oxide, hafnium lanthanum oxide, hafnium yttrium oxide, hafnium gadolinium oxide, hafnium aluminum oxide, hafnium zirconium oxide, hafnium titanium oxide, hafnium tantalum oxide, or strontium titanate oxide.

[0061] The metal gate may include a work function metal component and a fill metal component. The work function metal component is arranged to adjust the work function of its corresponding fin field-effect transistor to achieve the desired threshold voltage. In various embodiments, the work function metal component may include titanium aluminum, titanium aluminum nitride, tantalum carbonitride, titanium nitride, tungsten nitride, tungsten, or a combination of the above. The fill metal component is arranged to be the main conductive part of the functional gate. In various embodiments, the fill metal component may include aluminum, tungsten, copper, or a combination of the above.

[0062] The fin field-effect transistor device 100 also includes source / drain regions, such as the source / drain region 250A used for the fin field-effect transistor device 100A and the source / drain 250B used for the fin field-effect transistor device 100B. The formation methods of the source / drain 250A and 250B can each be one or more epitaxial processes, so they can be epitaxially grown structures. In various embodiments, the source / drain region 250A or 250B may include, but is not limited to, silicon, silicon phosphide, silicon arsenide, silicon germanium, germanium, III-V semiconductor compounds, or graphene.

[0063] An interlayer dielectric layer may be formed on the dielectric isolation structure 120 and on portions of the fin structures 150A and 150B. In some embodiments, the interlayer dielectric layer may comprise a low dielectric constant dielectric material. In some other embodiments, the interlayer dielectric layer may comprise silicon oxide. The method of forming the interlayer dielectric layer may be a suitable deposition process followed by a planarization process such as chemical mechanical polishing to planarize the upper surface of the interlayer dielectric layer.

[0064] The fin field effect transistor device 100 also includes an isolation structure 300. As Figure 2 shown in the top view, the isolation structure 300 is elongated and extends in the X direction (for example, the same X direction as Figure 1 shown). Since the isolation structure 300 is located between the fin field effect transistor devices 100A and 100B, it can electrically isolate the fin field effect transistor devices 100A and 100B, such as electrically isolating the gate structures 200A and 200B. Good electrical isolation between the gate structures 200A and 200B will reduce the noise or interference between the fin field effect transistor devices 100A and 100B, thereby improving the overall performance of the fin field effect transistor device 100.

[0065] It can be understood that before the isolation structure 300 is formed, each set of gate structures 200A and 200B is a continuous structure in the Y direction (for example, joined together). For example, each set of gate structures 200A and 200B may be a single part of the gate structure, and then openings or trenches may be etched in each continuous gate structure, and then an electrically insulating material such as a dielectric material is filled into the etched openings or trenches to form the isolation structure 300. Since the method of forming each isolation structure 300 is to cut through the continuous gate structure, the isolation structure 300 may be referred to as a cut metal gate structure hereafter. Conversely, before the gate structure (such as a high dielectric constant gate dielectric layer and a metal gate structure) is formed, a known isolation structure (for providing electrical isolation between adjacent gate structures) is formed. Since the order of forming the gate isolation structure in the known method is different from that in the embodiments of the present invention, compared with the known fin field effect transistor devices, the embodiments of the present invention can improve the pin position or increase the structural density per unit area.

[0066] For ease of understanding the embodiments of the present invention (such as using an isolation structure to implement high density capacitance), the method of forming the isolation structure 300 will be described as follows in conjunction with Figures 3 to 6 the following. Under this consideration, Figures 3 to 6 partial cross-sectional views of the fin field effect transistor device 100 in different manufacturing stages are shown, and the cross-section is along Figure 2 the cutting line A-A' in

[0067] As Figure 3As shown, fin structures 150A and 150B protrude upward in the Z direction from the dielectric isolation structure 120 (such as shallow trench isolation). The gate structure 200 is formed on the fin structures 150A and 150B, for example, partially covering the peripheries of the fin structures 150A and 150B. The gate structure 200 includes a gate dielectric layer 210. In some embodiments, the gate dielectric layer 210 may include the above-mentioned high-k dielectric material. The gate structure 200 also includes a gate formed on the gate dielectric layer 210. The gate includes a work function metal component 220 and a fill metal component 230. As described above, the work function metal component 220 is arranged to adjust the work function of the corresponding transistor, and the fill metal component 230 is arranged as the main conductive part of the gate.

[0068] It can be understood that an interface layer may be formed between the gate dielectric layer 210 and the fin structures 150A and 150B. However, for simplicity of the drawings, the interface layer is not shown. It should also be understood that the interlayer dielectric layer surrounds or buries the gate structure 200. However, due to the position of the cutting line A-A', the interlayer dielectric layer cannot be directly seen in the Figure 3 cross-sectional view. In Figure 3 the shown manufacturing stage, the gate structure 200 is a continuous structure in the Y direction and is not cut.

[0069] As Figure 4 shown, one or more etching processes 260 may be performed to etch the opening or trench 270. The trench 270 vertically extends through the gate structure 200 in the Z direction, including through the fill metal component 230, the work function metal component 220, and the gate dielectric layer 210. The trench 270 cuts the continuous gate structure 200 into two different parts: a part including the gate dielectric layer 210A, the work function metal component 220A, and a part of the fill metal component 230, and another part including the gate dielectric layer 210B, the work function metal component 220B, and the fill metal component 230B. The trench 270 has a lateral dimension 275 (measured in the Y direction). In some embodiments, the above-mentioned lateral dimension 275 is small, for example, between about 20 nm and about 30 nm. The small lateral dimension 275 of the trench can reduce the chip area or increase the structural density per unit area.

[0070] As Figure 5As shown, one or more deposition and polishing processes may be performed to form the isolation structure 300 in the trench 270. For example, a deposition process is first performed to deposit a dielectric material into the trench 270. In some embodiments, the dielectric material has good gap filling or recess filling characteristics. Thus, the deposited dielectric material can still effectively fill the trench 270 even if the lateral dimension 275 of the trench is small. In some embodiments, the deposition method of the dielectric material may employ an atomic layer deposition process, which has a slow deposition rate but can provide good gap filling performance. In other embodiments, the deposition method of the dielectric material may employ a plasma enhanced chemical vapor deposition process. A part of process 280 may then perform one or more polishing processes such as chemical mechanical polishing process to planarize the upper surface of the deposited dielectric material, thereby forming the isolation structure 300.

[0071] In some embodiments, the isolation structure 300 may comprise a single type of dielectric material such as silicon oxide, a low dielectric constant oxide, or aluminum oxide. It is worth noting that even when the isolation structure 300 comprises a single type of dielectric material, its physical properties may still be different from those of the same type of dielectric material included in other components because the processes used to form other components are different. For example, the shallow trench isolation (such as the dielectric isolation structure 120) in some embodiments may comprise silicon oxide, and the isolation structure 300 may also comprise silicon oxide. However, the method for forming the silicon oxide of the shallow trench isolation may be a flowable chemical vapor deposition, which is different from the plasma enhanced chemical vapor deposition or atomic layer deposition used to form the silicon oxide of the isolation structure 300. In this way, the silicon oxide of the shallow trench isolation and the silicon oxide of the isolation structure 300 may have different characteristics such as density or etching rate.

[0072] In some embodiments, the deposition process for forming the isolation structure 300 may comprise multiple processes to deposit multiple different layers / materials into the trench 270. For example, the isolation structure 300 may comprise a multi-layer or multi-stack structure having multiple stacked layers. Since the composition and thickness of each layer in the multi-stack structure can be set, the overall dielectric constant value of the isolation structure 300 can be specifically set to optimize the function of the isolation structure 300, which can provide electrical isolation between adjacent gate structures 200A and 200B.

[0073] In one example of a multi-stack structure, the isolation structure 300 may include a first layer and a second layer deposited on the first layer, where the first layer and the second layer have different material compositions. In some embodiments, the first layer may include silicon oxide, silicon oxynitride, silicon carbon oxynitride, silicon carbonitride, silicon nitride, or a combination thereof, and the second layer may include silicon oxide, silicon carbide, or a combination thereof. The first layer may have good gap filling performance as described above, and the second layer does not need to consider gap filling performance because the first layer substantially fills the trench 270. In some embodiments, the purpose of the second layer is to provide a flat or smooth upper surface. Therefore, the second layer can be a material with lower cost, and its deposition process is not a high-cost or time-consuming process such as atomic layer deposition process. For example, the method of depositing the second layer on the first layer can use processes such as chemical vapor deposition, such as plasma-enhanced chemical vapor deposition process. In some embodiments, depositing the second layer may leave one or more slits or air gaps 290 in the isolation structure 300, as Figure 6 shown. Due to air having a low dielectric constant, the presence of one or more air gaps 290 can improve the low dielectric constant property of the isolation structure 300.

[0074] Additional details of the isolation structure 300 and its formation method can be referred to U.S. Patent Application 15 / 941,137, with a filing date of March 30, 2018, titled "An Isolation Structure Having Different Distances to Adjacent FinFET Devices". It can be understood that in some embodiments, the isolation structure 300 (or another isolation structure formed by a method similar to the isolation structure 300) can also be used as electrical isolation between adjacent conductive contacts. In other words, a continuous conductive contact line can be cut through and filled with one or more dielectric materials to form a "cut trench contact structure". However, in other embodiments, the cut trench contact structure may simply include interlayer dielectric layer materials surrounding the conductive contacts, and the conductive contacts are not specifically cut and filled with dielectric materials to form the cut trench contact structure.

[0075] According to various embodiments of the present invention, the cut metal gate structure and the cut trench contact structure can be used to form closely stacked capacitor devices, which will be described in detail Figures 7 to 10 as follows. In this context, Figure 7 A partial top view showing another part of the fin field-effect transistor device 100 (hereinafter referred to as the fin field-effect transistor device 100C) is shown, which includes a cut metal gate structure and a cut trench contact structure. Figure 8 is a cross-sectional view of the fin field-effect transistor device 100C along the tangent line M-M', Figure 9 is another cross-sectional view of the fin field-effect transistor device along the tangent line N-N', and Figure 10It is a three-dimensional perspective view of a selected region 400 (outlined by a dashed box) of the fin field-effect transistor device 100C.

[0076] As Figure 7 shown, a portion of the fin field-effect transistor device 100C includes a plurality of gate structures (such as gate structures 410 to 421), each of which extends in a long shape in the Y direction. Between gate structures 410 to 412, 413 to 415, 416 to 418, and 419 to 421 in the X direction, there may also be portions of the interlayer dielectric layer 425 therebetween. The gate structures 410 to 421 can be formed by the same manufacturing process as that used for forming the gate structure 200. For example, the gate structures 410 to 421 can be formed by a replacement gate process and can each include a high-k gate dielectric layer and a metal gate. In some embodiments, the lateral dimension (measured in the X direction) of each of the gate structures 410 to 421 can be between about 10 nm and about 30 nm. However, since the gate structures 410 to 421 are formed on isolation regions (such as the dummy fins or shallow trench isolation described below), the gate structures 410 to 421 may not surround the fins. Therefore, it should be understood that the gate structures 410 to 421 do not have to be the same as Figures 1 to 6 the above-described gate structures related thereto, but the gate structures 410 to 421 can be formed by the manufacturing process of the above-described gate structures related to Figures 1 to 6 to implement the following capacitive structure of the embodiments of the present invention.

[0077] A portion of the fin field-effect transistor device 100C also includes a plurality of conductive contacts (such as conductive contacts 430 to 444), each of which extends in a long shape in the Y direction. Between conductive contacts 430 to 432, 433 to 435, 436 to 438, 439 to 441, and 442 to 444 in the X direction, there may also be portions of the interlayer dielectric layer 425 therebetween. The conductive contacts 430 to 444 can be formed by the same manufacturing process as that used for forming the conductive contacts of the source / drain regions (such as Figure 2 the source / drain regions 250A or 250B shown). In various embodiments, the conductive contacts 430 to 444 can include conductive materials such as copper, aluminum, tungsten, or a combination and / or alloy thereof. In some embodiments, the lateral dimension (measured in the X direction) of each of the conductive contacts 430 to 444 can be between about 20 nm and about 40 nm. In some embodiments, the spacing (measured in the X direction) between each pair of adjacent gate structures and conductive contacts (such as gate structure 419 and conductive contact 439) can be between about 15 nm and about 35 nm.

[0078] In various embodiments of the present invention, the gate structures 410 to 421 and the conductive contacts 430 to 444 are located on an electrically insulating structure, such as onFigures 8 to 10 on the dielectric isolation structure 120 (such as shallow trench isolation) or another suitable dielectric material shown, or on a dummy fin (also referred to as a hybrid fin) located on the shallow trench isolation. For example, the dummy fin may comprise a nitride material or a high-k dielectric material. As Figure 10 shown, a portion of each of the conductive contacts 430 to 444 may extend partially downward (in the Z direction) into the dielectric isolation structure 120.

[0079] The fin field effect transistor device 100C also includes isolation structures 500 and 501, which extend in a long shape along the X direction. The isolation structure 500 is located between the gate structures 410 and 411, 413 and 414, 416 and 417, and 419 and 420, and between the conductive contacts 430 and 431, 433 and 434, 436 and 437, 439 and 440, and 442 and 443. The isolation structure 501 is located between the gate structures 411 and 412, 414 and 415, 417 and 418, and 420 and 421, and between the conductive contacts 431 and 432, 434 and 435, 437 and 438, 440 and 441, and 443 and 444.

[0080] It can be understood that although the isolation structures 500 and 501 in the drawings are each continuous structures, they may actually be discontinuous and include a plurality of different isolation structures. For example, the isolation structure 500 may include cut metal gate structures 510 to 513, and the isolation structure 501 may include cut metal gate structures 514 to 517. The cut metal gate structures 510 to 517 may be examples of the aforementioned isolation structure 300, and the method of forming them may be similar to the above process described in conjunction with Figures 3 to 6 The above. In other words, the cut metal gate structures 510 to 517 cut through the originally continuous gate lines, thus separating and electrically isolating the gate structures 410 and 411, 413 and 414, 416 and 417, 419 and 420, 411 and 412, 414 and 415, 417 and 418, and 420 and 421 respectively.

[0081] The isolation structure 500 may also include scribe line contact structures 530 to 534, and the isolation structure 501 may include scribe line structures 535 to 539. In some embodiments, the scribe line contact structures 530 to 539 may include interlayer dielectric layer materials surrounding the conductive contacts 430 to 444. In other words, when the conductive contacts 430 to 444 are formed, the scribe line contact structures 530 to 539 are formed, such as the interlayer dielectric layer materials surrounding the conductive contacts. However, in some embodiments, the method of forming the scribe line contact structures 530 to 539 may also be to etch openings into a continuous conductive contact line to cut off the continuous conductive contact line and fill the openings with a dielectric material. The above forming method is similar to the forming method of the cut metal gate structures 510 to 517.

[0082] The cut metal gate structures 510 to 517 and the scribe line contact structures 530 to 539 may have different material compositions. For example, the scribe line contact structures 539 to 539 may include the same material as the interlayer dielectric layer (such as a low dielectric constant dielectric layer), while the cut metal gate structures 510 to 517 in some embodiments may include silicon nitride or silicon oxide, and the cut metal gate structures 510 to 517 in other embodiments may include a variety of different materials. It should also be understood that the cut metal gate structures 510 to 517 and the scribe line contact structures 530 to 539 may have different dimensions in the X direction and / or the Y direction and may be misaligned with each other. In addition, the cut metal gate structures 510 to 517 do not have to be adjacent to the scribe line contact structures 530 to 539 in the X direction.

[0083] The fin field effect transistor device 100C also includes a plurality of metal lines 550 to 558. As Figure 7 shown, the metal lines 550 to 552 are located on the gate structures 410, 413, 416, and 419 and on the conductive contacts 430, 433, 436, 439, and 442. The metal lines 553 to 555 are located on the gate structures 411, 414, 417, and 420 and on the conductive contacts 431, 434, 437, 440, and 443. The metal lines 556 to 558 are located on the gate structures 412, 415, 418, and 421 and on the conductive contacts 432, 435, 438, 441, and 444.

[0084] The metal lines 550 to 558 are metal lines of a multi-layer interconnect structure. For example, the metal lines 550 to 558 may be metal lines of an interconnect layer of metal 0 (M0). In various embodiments, the metal lines 550 to 558 may include conductive materials such as copper, aluminum, tungsten, and / or combinations and / or alloys thereof.

[0085] The arrangement of metal lines 550 to 558 is staggered. Specifically, the first group of metal lines 550, 552, 554, 556, and 558 are each electrically connected to an electrically "high" node, while the second group of metal lines 551, 553, 555, and 557 are electrically connected to an electrically "low" node. In some embodiments, the "high" node and the "low" node represent different groups of electrodes, which can be at any potential (as long as the voltage between the "high" node and the "low" node is different), depending on the application, as long as the reliability requirements can be met. For example, in one embodiment, an electrically "high" signal (such as a first voltage) can be applied to the "high" node, and an electrically "low" signal (such as electrical ground or a second voltage, and the second voltage is lower than the first voltage) can be applied to the "low" node.

[0086] The gate structures 410 to 421 and the conductive contacts 430 to 444 are electrically coupled to the metal lines 550 to 558 via a plurality of vias 570 to 611. For example, the conductive contacts 430, 433, 436, 439, and 442 are electrically connected to the metal line 550 via the vias 570 to 574, and are electrically connected to the metal line 552 via the vias 575 to 579, respectively. The conductive contacts 431, 434, 437, 440, and 443 are electrically connected to the metal line 553 via the vias 580 to 584, and are electrically connected to the metal line 555 via the vias 585 to 589, respectively. The conductive contacts 432, 435, 438, 441, and 444 are electrically connected to the metal line 556 via the vias 590 to 594, and are electrically connected to the metal line 558 via the vias 595 to 599, respectively. At the same time, the gate structures 410, 413, 416, and 419 are electrically connected to the metal line 551 via the vias 600 to 603. The gate structures 411, 414, 417, and 420 are electrically connected to the metal line 554 via the vias 604 to 607. The gate structures 412, 415, 418, and 421 are electrically connected to the metal line 557 via the vias 608 to 611.

[0087] According to the above, it can be seen that the gate structures 410 to 421 and the conductive contacts 430 to 444 are electrically connected to the "high" node and the "low" node in a staggered arrangement, which is one of the unique properties of the fin field effect transistor device 100C. For example, Figure 7The portion of the fin field effect transistor device 100C shown includes unit 650, unit 651 adjacent to unit 650 (below unit 650 in the Y direction), and unit 652 adjacent to unit 651 (below unit 651 in the Y direction). For unit 650, the "high" node is electrically connected to conductive contacts 430, 433, 436, 439, and 442, and the "low" node is electrically connected to gate structures 410, 413, 416, and 419. However, for unit 651, the "low" node is electrically connected to conductive contacts 431, 434, 437, 440, and 443, and the "high" node is electrically connected to gate structures 411, 414, 417, and 420.

[0088] In other words, the "high" node is connected to the conductive contacts in one unit but to the gate structures in the adjacent unit, while the "low" node is connected to the gate structures in one unit but to the conductive contacts in the adjacent unit. This interleaved pattern can be repeated multiple times. For example, unit 652 (not shown with its isolation structure to simplify the drawings) can have the same electrical setup as unit 650. It should be understood that another unit having the same setup as unit 651 can also be below unit 652 in the Y direction. In this aspect, the fin field effect transistor 100C can be extended in the Y direction. Similarly, the fin field effect transistor device 100C can also be extended in the X direction, and the interleaved setup of the gate structures and conductive contacts, as well as the metal lines to which the gate structures and conductive contacts are connected, can be repeated in the X direction.

[0089] The interleaved electrical wiring setup of the gate structures and conductive contacts to the "high" and "low" nodes in the embodiments of the present invention can provide high-density capacitance, which can allow capacitance to be formed in the X and Y directions. The details of the above structure will be further illustrated in Figure 8 and 9 in the cross-sectional views and Figure 10 in the three-dimensional perspective views. As shown in the example of 10, a plurality of capacitors 700 to 712 are formed. Capacitor 711 and a similarly formed capacitor 713 are shown in Figure 8 Capacitor 710 and a similarly formed capacitor 714 are also shown in Figure 9 Some of the capacitors 710 to 714 can be formed by the conductive contacts, adjacent gate structures, and the dielectric material between the two, while some other capacitors can be formed by adjacent conductive contacts and the dielectric material between the conductive contacts, or by adjacent gate structures and the dielectric material between the gate structures.

[0090] As in Figure 8 and 10In the example shown, adjacent gate structures 419 and 420 and the cut metal gate structure 513 between the gate structures 419 and 420 define a capacitor 711. The cut metal gate structure is shown in Figure 8 but not shown in Figure 10 to simplify the drawings. As Figure 7 shown, one end (gate structure 419) of the capacitor 711 is electrically connected to the "low" node, and the other end (gate structure 420) of the capacitor 711 is electrically connected to the "high" node. The gate structures 419 and 420 are electrically connected to opposite electrical nodes (along the dielectric material such as the cut metal gate structure 513 located between the electrical nodes) to generate the desired parasitic capacitance effect, thereby forming the capacitor 711. If the adjacent gate structures 419 and 420 are not connected to different electrical nodes (with a potential between the nodes), no capacitor will be formed (at least not the desired capacitor).

[0091] Similarly, Figure 9 and 10 the capacitor shown in Figure 9 is defined by adjacent conductive contacts 439 and 440 and the cut trench contact structure 533 located between the conductive contacts 439 and 440. The cut trench contact structure 533 is shown in Figure 10 but not shown in Figure 7 to simplify the drawings. As

[0092] In addition to defining capacitors (such as capacitors 710 and 711) in the Y direction, the fin field effect transistor device 100C also defines capacitors in the X direction. As Figure 10 shown in the example, adjacent conductive contacts and gate structure pairs can define capacitors 700 to 707 in the X direction. Taking the capacitor 700 as an example but not limited thereto, the conductive contact 436, the adjacent gate structure 416, and a part of the interlayer dielectric layer 425 between the two can define the capacitor 700. One end (conductive contact 436) of the capacitor 700 is electrically connected to the "high" node, and the other end (gate structure) of the capacitor 700 is electrically connected to the "low" node (in Figure 7is more obvious). Similarly, each of capacitors 701 to 707 has two ends connected to different nodes, one end being a conductive contact and the other end being a gate structure. As described above, the two ends of each of capacitors 700 to 707 are electrically coupled to different nodes (such as nodes with different potentials), which may generate capacitors 700 to 707. If the two ends are connected to the same node, the desired capacitance is not formed.

[0093] According to the above, it can be seen that the unique electrical settings of various structures of the fin field effect transistor device 100C can effectively form capacitors in the X direction and the Y direction. Each adjacent pair of conductive contacts (adjacent in the Y direction), each adjacent pair of gate structures (adjacent in the Y direction), and each adjacent pair of conductive contacts and gate structures (adjacent in the X direction) can define a capacitor. Compared with the capacitors on the known integrated circuit, the result of the above setting is a more closely stacked capacitor array. The sizes of the cut metal gate structures 510 to 517 and the cut trench contact structures 530 to 539 (such as their sizes in the Y direction) can be set to adjust the capacitance values of the capacitors defined in the Y direction, and the distance between a pair of adjacent conductive contacts and gate structures in the X direction can be set to adjust the capacitance values of the capacitors defined in the X direction.

[0094] In addition to providing a densely stacked capacitor array with its capacitance value being elastically adjustable, the embodiments of the present invention also enhance the consistency control. Different from the known process, the "high" nodes are not all connected to the same type of structure, and the "low" nodes are not all connected to the same type of structure either. On the contrary, in some other settings, some "high" nodes can be electrically connected to the conductive contacts, while other "high" nodes are electrically connected to the gate structures. The same applies to the "low" nodes in other settings. In this way, the embodiments of the present invention provide better consistency control through the averaging effect. For example, process variations or other defects that affect a specific type of structure (such as conductive contacts or gate structures) will not have a much greater negative impact on one type of node than on another type of node. On the contrary, process variations or defects almost uniformly affect the "high" node structures and the "low" node structures.

[0095] In addition, embodiments of the present invention are easy to expand. For example, units 650 and 651 may together include an expandable structure. In other words, unit 652 may be a replica of unit 650, and another unit below unit 652 (in the Y direction) may be a replica of unit 651. This pattern may be repeated multiple times. In addition, each unit is not limited to having 3 metal lines connected to 3 nodes (such as high-low-high or low-high-low). Instead, each unit may only include 2 metal lines connected to 2 nodes (such as high-low or low-high), or more than 3 metal lines connected to more than 3 nodes. In addition, embodiments of the present invention may also repeat the wire line arrangement with each unit multiple times in the X direction to expand the pattern in the X direction.

[0096] Figure 11 FIG. 4 is a flow chart of a method 900 for fabricating a fin field effect transistor device in various embodiments of the present invention. Method 900 includes step 910 of forming a plurality of gate structures on a dielectric structure, and each gate structure extends in a first direction.

[0097] Method 900 includes step 920 of forming a plurality of conductive contacts on the dielectric structure, and each conductive contact extends in the first direction. The gate structures and the conductive contacts are spaced apart from each other in a second direction, and the second direction is different from the first direction.

[0098] Method 900 includes step 930 of etching trenches in a portion of each gate structure.

[0099] Method 900 includes step 940 of filling the trenches with one or more dielectric materials.

[0100] Method 900 includes step 950 of forming one or more vias on the remaining portion of each gate structure, and on each conductive contact.

[0101] Method 900 includes step 960 of forming a plurality of metal lines on the vias. The metal lines can be electrically interconnected to the gate structures or the conductive contacts via individual vias.

[0102] In some embodiments, step 950 forms one or more vias, and step 960 forms a plurality of metal lines, so that a first group of metal lines is related to a first electrical node, a second group of metal lines is related to a second electrical node, and the first electrical node is different from the second electrical node; the first group of metal lines is electrically interconnected to a first group of gate structures and a first group of conductive contacts, and the second group of metal lines is electrically interconnected to a second group of gate structures and a second group of conductive contacts.

[0103] In some embodiments, the first set of metal lines and the second set of metal lines are staggered in a first direction, the first set of gate structures and the second set of gate structures are staggered in the first direction, and the first set of conductive contacts and the second set of conductive contacts are staggered in the first direction. In some embodiments, a first voltage signal is applied to the first set of metal lines, and a second voltage signal is applied to the second set of metal lines.

[0104] In some embodiments, the interlayer dielectric layer surrounds the gate structure and the conductive contacts, and step 940 includes filling the trench with one or more dielectric materials having a material composition different from that of the interlayer dielectric layer. In some embodiments, step 940 includes filling the trench with a plurality of different dielectric materials.

[0105] It can be understood that additional process steps may be performed before, during, or after the above steps 910 to 960 to complete the fabrication of the semiconductor device. However, these additional process steps are not described in detail here to simplify the description.

[0106] In summary, the embodiments of the present invention employ various components in the fabrication of fin field effect transistors to implement capacitors on an integrated circuit. For example, gate structures, conductive contacts, a cut metal gate structure and a cut trench contact structure that respectively cut through the gate structure and the conductive contacts, and a portion of the interlayer dielectric layer can be used to define a high-density capacitor array. The positions of the gate structures and the conductive contacts are staggered, enabling the capacitors to be defined in the X direction and the Y direction.

[0107] The capacitors implemented in the embodiments of the present invention in the above manner can provide more advantages than the capacitors on the known integrated circuits. However, it can be understood that other embodiments may provide additional advantages. It is not necessary to describe all the advantages here, and not all embodiments need to have specific advantages. One of the advantages of the embodiments of the present invention is that defining capacitors in the X direction and the Y direction can increase the capacitance density per unit chip area. Therefore, compared with the known devices, more capacitors can be formed in a chip of any given size. Another advantage is better consistency control. For example, not all gate structures are electrically connected to a given type of node (such as a "high" node or a "low" node) and conductive contacts, so the embodiments of the present invention can achieve an averaging effect. Process variations or other defects associated with the fabrication of the gate structures and the conductive contacts can be evenly distributed between the "high" nodes and the "low" nodes. In this way, the capacitors from different regions of the integrated circuit or from different integrated circuits (which may or may not be from the same wafer) can have better consistency. Other advantages include compatibility with the existing fabrication processes of fin field effect transistors, so the embodiments of the present invention can be implemented simply and at low cost.

[0108] One embodiment of the present invention relates to a semiconductor device. The semiconductor device includes a first gate structure and a second gate structure each extending in a first direction; a first conductive contact and a second conductive contact each extending in the first direction, wherein the first conductive contact, the second conductive contact, the first gate structure, and the second gate structure are separated in a second direction, and the first direction is different from the second direction; a first isolation structure extending in the second direction, wherein the first isolation structure separates the first gate structure and the second gate structure; and a second isolation structure extending in the second direction, wherein the second isolation structure separates the first conductive contact and the second conductive contact; wherein the first gate structure is electrically coupled to a first electrical node; the second gate structure is electrically coupled to a second electrical node, and the first electrical node is different from the second electrical node; the first conductive contact is electrically coupled to the second electrical node; and the second conductive contact is electrically coupled to the first electrical node.

[0109] In some embodiments, the semiconductor device further includes a dielectric structure, wherein the first gate structure, the second gate structure, the first conductive contact, the second conductive contact, the first isolation structure, and the second isolation structure are all located on the dielectric structure.

[0110] In some embodiments, the dielectric structure includes shallow trench isolation.

[0111] In some embodiments, the first gate structure is adjacent to the first conductive contact; and the second gate structure is adjacent to the second conductive contact; wherein the semiconductor device further includes: a first metal line and a second metal line each extending in the second direction and located on the first gate structure and the first conductive contact; a third metal line and a fourth metal line each extending in the second direction and located on the second gate structure and the second conductive contact; a first via located between the first gate structure and the first metal line; a second via located between the first conductive contact and the second metal line; a third via located between the second conductive contact and the third metal line; and a fourth via located between the second gate structure and the fourth metal line.

[0112] In some embodiments, the semiconductor device further includes: a fifth metal line extending in the second direction and located on the first gate structure and the first conductive contact; a sixth metal line extending in the second direction and located on the second gate structure and the second conductive contact; a fifth via located between the first conductive contact and the fifth metal line; and a sixth via located between the second conductive contact and the sixth metal line.

[0113] In some embodiments, the semiconductor device further includes an interlayer dielectric layer that is at least partially located between the first gate structure and the first conductive contact, and between the second gate structure and the second conductive contact.

[0114] In some embodiments, when a first electrical signal is applied to a first electrical node and a second electrical signal is applied to a second electrical node, a first gate structure, a first conductive contact, and a first portion of an interlayer dielectric layer form a first capacitor; a second gate structure, a second conductive contact, and a second portion of the interlayer dielectric layer form a second capacitor; a first gate structure, a second gate structure, and a first isolation structure form a third capacitor; and a first conductive contact, a second conductive contact, and a second isolation structure form a fourth capacitor.

[0115] In some embodiments, the first electrical signal and the second electrical signal include different voltages.

[0116] In some embodiments, the interlayer dielectric layer and the second isolation structure have the same material composition.

[0117] In some embodiments, the first isolation structure and the second isolation structure have different material compositions.

[0118] In some embodiments, the first isolation structure and the second isolation structure have different sizes.

[0119] In some embodiments, the first gate structure, the second gate structure, the first conductive contact, the second conductive contact, the first isolation structure, and the second isolation structure are portions in units; and the semiconductor device includes a plurality of units.

[0120] An embodiment of the present invention relates to a device. The device includes: a dielectric structure; a plurality of gate structures located on the dielectric structure, wherein the gate structures each extend in a first direction; a plurality of conductive contacts located on the dielectric structure, wherein the conductive contacts each extend in the first direction; an interlayer dielectric layer located on the dielectric structure and between the conductive contacts and the gate structures in a second direction, and the first direction is different from the second direction; a plurality of first isolation structures located between adjacent gate structures to separate adjacent gate structures in the first direction; a plurality of second isolation structures located between adjacent conductive contacts to separate adjacent conductive contacts in the first direction; a plurality of first metal lines electrically interconnected to a first group of gate structures and a first group of conductive contacts; and a plurality of second metal lines electrically interconnected to a second group of gate structures and a second group of conductive contacts, wherein the first metal lines and the second metal lines are staggered in the first direction; the first group of gate structures and the second group of gate structures are staggered in the first direction; and the first group of conductive contacts and the second group of conductive contacts are staggered in the first direction.

[0121] In some embodiments, the first isolation structure and the interlayer dielectric layer have different material compositions, and the second isolation structure and the interlayer dielectric layer have the same material composition.

[0122] In some embodiments, the first isolation structure and the second isolation structure have different sizes.

[0123] Another embodiment of the present invention relates to a method. The method includes: forming a plurality of gate structures each extending in a first direction on a dielectric structure; forming a plurality of conductive contacts each extending in the first direction on the dielectric structure, wherein the gate structures and the conductive contacts are separated from each other in a second direction, and the first direction is different from the second direction; etching trenches in a portion of each gate structure; filling the trenches with one or more dielectric materials; forming one or more vias on the remaining portion of each gate structure and each conductive contact; forming a plurality of metal lines on the vias, and the metal lines are electrically interconnected to the gate structures or the conductive contacts via individual vias, wherein the steps of forming the vias and forming the metal lines are performed such that a first group of metal lines is associated with a first electrical node; a second group of metal lines is associated with a second electrical node, and the first electrical node is different from the second electrical node; the first group of metal lines is electrically interconnected to a first group of gate structures and a first group of conductive contacts; and the second group of metal lines is electrically interconnected to a second group of gate structures and a second group of conductive contacts.

[0124] In some embodiments, the first group of metal lines and the second group of metal lines are staggered in the first direction; the first group of gate structures and the second group of gate structures are staggered in the first direction; and the first group of conductive contacts and the second group of conductive contacts are staggered in the first direction.

[0125] In some embodiments, the method further includes applying a first voltage signal to the first group of metal lines and applying a second voltage signal to the second group of metal lines.

[0126] In some embodiments, an interlayer dielectric layer surrounds the gate structures and the conductive contacts; and the filling step includes filling the trenches with one or more dielectric materials having a different material composition from the interlayer dielectric layer.

[0127] In some embodiments, the filling step includes filling the trenches with a plurality of different dielectric materials.

[0128] The features of the above embodiments are beneficial for those skilled in the art to understand the present invention. Those skilled in the art should understand that the present invention can be used as a basis to design and vary other processes and structures to achieve the same purpose and / or the same advantages of the above embodiments. Those skilled in the art should also understand that these equivalent substitutions do not depart from the spirit and scope of the present invention, and can be changed, replaced, or modified without departing from the spirit and scope of the present invention.

Claims

1. A semiconductor device, characterized in that, Comprising: A first gate structure and a second gate structure, each extending in a first direction; A first conductive contact and a second conductive contact, each extending in the first direction, wherein the first conductive contact and the second conductive contact are separated from the first gate structure and the second gate structure in a second direction, and the first direction is different from the second direction; A first isolation structure, extending in the second direction, wherein the first isolation structure separates the first gate structure and the second gate structure; and A second isolation structure, extending in the second direction, wherein the second isolation structure separates the first conductive contact and the second conductive contact; Wherein the first gate structure is electrically coupled to a first electrical node; The second gate structure is electrically coupled to a second electrical node, and the first electrical node is different from the second electrical node; The first conductive contact is electrically coupled to the second electrical node; And The second conductive contact is electrically coupled to the first electrical node.

2. The semiconductor device according to claim 1, further comprising: A dielectric structure, wherein the first gate structure, the second gate structure, the first conductive contact, the second conductive contact, the first isolation structure, and the second isolation structure are all located on the dielectric structure.

3. The semiconductor device according to claim 2, wherein the dielectric structure comprises a shallow trench isolation structure.

4. The semiconductor device according to claim 1, wherein The first gate structure is adjacent to the first conductive contact; and The second gate structure is adjacent to the second conductive contact, Wherein the semiconductor device further comprises: A first metal line and a second metal line, each extending in the second direction and located on the first gate structure and the first conductive contact; A third metal line and a fourth metal line, each extending in the second direction and located on the second gate structure and the second conductive contact; A first via, located between the first gate structure and the first metal line; A second via, located between the first conductive contact and the second metal line; A third via, located between the second conductive contact and the third metal line; and A fourth via, located between the second gate structure and the fourth metal line.

5. The semiconductor device according to claim 4, further comprising: A fifth metal line, extending in the second direction and located on the first gate structure and the first conductive contact; A sixth metal line, extending in the second direction and located on the second gate structure and the second conductive contact; A fifth via, located between the first conductive contact and the fifth metal line; and A sixth via, located between the second conductive contact and the sixth metal line.

6. The semiconductor device according to claim 1, further comprising an interlayer dielectric layer, which is at least partially located between the first gate structure and the first conductive contact, and between the second gate structure and the second conductive contact.

7. The semiconductor device according to claim 6, wherein when a first electrical signal is applied to the first electrical node, and a second electrical signal is applied to the second electrical node, The first gate structure, the first conductive contact, and a first portion of the interlayer dielectric layer form a first capacitor; The second gate structure, the second conductive contact, and a second portion of the interlayer dielectric layer form a second capacitor; The first gate structure, the second gate structure, and the first isolation structure form a third capacitor; and The first conductive contact, the second conductive contact, and the second isolation structure form a fourth capacitor.

8. The semiconductor device of claim 7, wherein the first electrical signal and the second electrical signal comprise different voltages.

9. The semiconductor device of claim 6, wherein the interlayer dielectric layer and the second isolation structure have the same material composition.

10. The semiconductor device of claim 1, wherein the first isolation structure and the second isolation structure have different material compositions.

11. The semiconductor device of claim 1, wherein the first isolation structure and the second isolation structure have different dimensions.

12. The semiconductor device of claim 1, wherein the first gate structure, the second gate structure, the first conductive contact, the second conductive contact, the first isolation structure, and the second isolation structure are parts of a unit; and The semiconductor device comprises a plurality of such units.

13. A semiconductor device, comprising: A dielectric structure; A plurality of gate structures located on the dielectric structure, wherein the plurality of gate structures each extend in a first direction; A plurality of conductive contacts located on the dielectric structure, wherein the plurality of conductive contacts each extend in the first direction; An interlayer dielectric layer located on the dielectric structure and between the plurality of conductive contacts and the plurality of gate structures in a second direction, and the first direction is different from the second direction; A plurality of first isolation structures located between adjacent ones of the plurality of gate structures to separate adjacent ones of the plurality of gate structures in the first direction; A plurality of second isolation structures located between adjacent ones of the plurality of conductive contacts to separate adjacent ones of the plurality of conductive contacts in the first direction; A plurality of first metal lines each electrically connecting to a corresponding first group of the plurality of gate structures and a first group of the plurality of conductive contacts; And A plurality of second metal lines each electrically connecting to a corresponding second group of the plurality of gate structures and a second group of the plurality of conductive contacts, Wherein: The plurality of first metal lines and the plurality of second metal lines are staggered in the first direction; The first group of the plurality of gate structures and the second group of the plurality of gate structures are staggered in the first direction; and The first group of the plurality of conductive contacts and the second group of the plurality of conductive contacts are staggered in the first direction.

14. The semiconductor device of claim 13, wherein the first isolation structure and the interlayer dielectric layer have different material compositions, and the second isolation structure and the interlayer dielectric layer have the same material composition.

15. The semiconductor device of claim 13, wherein the first isolation structure and the second isolation structure have different dimensions.

16. A semiconductor device, comprising: A plurality of gate structures, each extending in a first direction; A plurality of conductive contacts, each extending in the first direction, wherein the plurality of gate structures and the plurality of conductive contacts are separated from each other in a second direction, and the first direction is different from the second direction; A plurality of vias, located on the plurality of gate structures and the plurality of conductive contacts; And A plurality of metal lines, located on the plurality of vias, and the plurality of metal lines are electrically interconnected to the plurality of gate structures or the plurality of conductive contacts via the plurality of vias, wherein: The first group of the plurality of metal lines is associated with a first electrical node, and each is electrically interconnected to a corresponding first group of the plurality of gate structures and a first group of the plurality of conductive contacts; And The second group of the plurality of metal lines is associated with a second electrical node, and each is electrically interconnected to a corresponding second group of the plurality of gate structures and a second group of the plurality of conductive contacts.

17. The device according to claim 16, wherein: The first group of the plurality of metal lines and the second group of the plurality of metal lines are arranged in an interleaved manner in the first direction; The first group of the plurality of gate structures and the second group of the plurality of gate structures are arranged in an interleaved manner in the first direction; And The first group of the plurality of conductive contacts and the second group of the plurality of conductive contacts are arranged in an interleaved manner in the first direction.

18. The semiconductor device according to claim 16, wherein: The first group of the plurality of metal lines is electrically coupled to a first voltage signal; and The second group of the plurality of metal lines is electrically coupled to a second voltage signal, and the voltages of the first voltage signal and the second voltage signal are different.

19. The semiconductor device according to claim 16, further comprising an interlayer dielectric layer surrounding the plurality of gate structures and the plurality of conductive contacts.

20. The semiconductor device according to claim 19, wherein the semiconductor device includes a plurality of capacitors, which include the interlayer dielectric layer, the plurality of gate structures, and the plurality of conductive contacts.

21. A method for forming a semiconductor device, comprising: Forming a plurality of gate structures each extending in a first direction; Forming a plurality of conductive contacts each extending in the first direction, wherein the plurality of gate structures and the plurality of conductive contacts are separated from each other in a second direction, and the first direction is different from the second direction; Forming an interlayer dielectric layer surrounding the plurality of gate structures and the plurality of conductive contacts; Forming an opening in each of the plurality of gate structures; Filling the opening with one or more dielectric materials; and At least partially using the plurality of gate structures, the plurality of conductive contacts, and one or more dielectric materials to form a capacitor.

22. The method for forming a semiconductor device according to claim 21, wherein the step of forming the capacitor includes: Electrically coupling the first group of the plurality of gate structures and the first group of the plurality of conductive contacts to a first electrical node; And Electrically couple the multiple gate structures of the second group and the multiple conductive contacts of the second group to a second electrical node, and the first electrical node is different from the second electrical node, wherein the multiple gate structures of the first group and the multiple gate structures of the second group are staggered in the first direction, and the multiple conductive contacts of the first group and the multiple conductive contacts of the second group are staggered in the first direction.

23. The method of forming a semiconductor device as claimed in claim 22, further comprising: Applying a first electrical signal to the first electrical node; And Applying a second electrical signal to the second electrical node, wherein the voltage between the first electrical signal and the second electrical signal is different.

24. The method of forming a semiconductor device as claimed in claim 22, further comprising: Forming a plurality of vias on the plurality of conductive contacts; Forming a plurality of metal lines on the plurality of vias; Electrically coupling the plurality of vias of the first group and the plurality of conductive contacts of the first group to the first electrical node; And Electrically coupling the plurality of vias of the second group and the plurality of conductive contacts of the second group to the second electrical node.

25. The method of forming a semiconductor device as claimed in claim 21, wherein the step of forming the plurality of gate structures includes forming the plurality of gate structures to be at least partially located on a dielectric structure.

26. The method of forming a semiconductor device as claimed in claim 25, wherein the dielectric structure includes a shallow trench isolation structure.

27. The method of forming a semiconductor device as claimed in claim 25, wherein the step of forming the opening includes etching away a portion of each of the plurality of gate structures until the dielectric structure is exposed.

28. The method of forming a semiconductor device as claimed in claim 21, wherein: The one or more dielectric materials include a first dielectric material; A second dielectric material laterally surrounds the plurality of conductive contacts; and At least partially employing the first dielectric material and the second dielectric material to form the capacitor.

29. The method of forming a semiconductor device as claimed in claim 21, wherein the step of filling the opening includes filling the opening with a plurality of dielectric materials.

30. The method of forming a semiconductor device as claimed in claim 21, wherein the step of filling the opening includes sealing an air gap in the one or more dielectric materials filled in the opening.

31. The method for forming a semiconductor device as claimed in claim 21, further comprising: Forming a plurality of fin structures that bulge upward, wherein the gate structure at least partially covers the plurality of fin structures that bulge upward.

32. A method of forming a semiconductor device, comprising: Forming a plurality of gate structures each extending in a first direction; Forming a plurality of conductive contacts each extending in the first direction, wherein the plurality of gate structures and the plurality of conductive contacts are separated from each other in a second direction, and the first direction is different from the second direction; Dividing each of the plurality of gate structures into two separate gate structures separated by a gap; Forming an isolation structure in the gap; And Electrically couple the plurality of gate structures and the plurality of conductive contacts to form at least a first capacitor in the first direction and a second capacitor in the second direction, wherein the first capacitor is formed by a first gate structure of the plurality of gate structures, a second gate structure of the plurality of gate structures, and the isolation structure located between the first gate structure and the second gate structure, and the second capacitor is formed by the first gate structure, a first conductive contact of the plurality of conductive contacts, and an interlayer dielectric layer located between the first gate structure and the first conductive contact.

33. The method of forming a semiconductor device as claimed in claim 32, wherein the first capacitor and the second capacitor share at least one of the plurality of gate structures.

34. The method of forming a semiconductor device as claimed in claim 32, wherein the gate structure is formed on a shallow trench isolation structure.

35. A method of forming a semiconductor device, comprising: Forming a plurality of gate structures each extending in a first direction on a dielectric structure; Forming a plurality of conductive contacts each extending in the first direction on the dielectric structure, wherein the plurality of gate structures and the plurality of conductive contacts are separated from each other in a second direction, and the first direction is different from the second direction; Etching a trench in a portion of each of the plurality of gate structures; Filling the trench with one or more dielectric materials; Forming one or more vias on the remaining portions of each of the plurality of gate structures and each of the plurality of conductive contacts; Forming a plurality of metal lines on the one or more vias, and the plurality of metal lines are electrically interconnected to the plurality of gate structures or the plurality of conductive contacts via the respective one or more vias, wherein the steps of forming the one or more vias and forming the plurality of metal lines are performed such that a first group of the plurality of metal lines is associated with a first electrical node; A second group of the plurality of metal lines is associated with a second electrical node, and the first electrical node is different from the second electrical node; The first group of the plurality of metal lines is electrically interconnected to the corresponding first group of the plurality of gate structures and the first group of the plurality of conductive contacts; And The second group of the plurality of metal lines is electrically interconnected to the corresponding second group of the plurality of gate structures and the second group of the plurality of conductive contacts.

36. The method of forming a semiconductor device as claimed in claim 35, wherein: The first group of the plurality of metal lines and the second group of the plurality of metal lines are staggered in the first direction; The first group of the plurality of gate structures and the second group of the plurality of gate structures are staggered in the first direction; And The first group of the plurality of conductive contacts and the second group of the plurality of conductive contacts are staggered in the first direction.

37. The method of forming a semiconductor device as claimed in claim 35, further comprising applying a first voltage signal to the first group of the plurality of metal lines and applying a second voltage signal to the second group of the plurality of metal lines.

38. The method of forming a semiconductor device as claimed in claim 35, wherein an interlayer dielectric layer surrounds the plurality of gate structures and the plurality of conductive contacts; and the filling step includes filling the trench with one or more dielectric materials having a different material composition from that of the interlayer dielectric layer.

39. The method of forming a semiconductor device as claimed in claim 35, wherein the filling step includes filling the trench with a plurality of different dielectric materials.

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