Light-emitting device

Abstract

The light-emitting device includes: a substrate extending in a first direction and a second direction; first to fourth light-emitting structures, which are spaced apart from each other in the first direction and the second direction and arranged in a matrix form on the substrate; a plurality of first interconnection layer structures connecting the first light-emitting structure to the second light-emitting structure; a second interconnection layer structure connecting the second light-emitting structure to the third light-emitting structure; and a plurality of third interconnection layer structures connecting the third light-emitting structure to the fourth light-emitting structure.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of priority from Korean Patent Application No. 10-2018-0075851 filed on June 29, 2018, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to a light emitting device, and more particularly, to a light emitting device including a plurality of light emitting diodes (LEDs) connected in series. Background Art

[0004] Since LEDs have advantages of low power consumption and high brightness, LEDs are widely used as light sources. In particular, recently, semiconductor light emitting devices have been used as backlight devices used in lighting devices and large liquid crystal displays (LCDs).

[0005] To improve the energy efficiency of light-emitting devices, multiple LED chips can be connected in series. However, connecting individual chips, each containing a single LED, in series requires additional processes, such as substrate separation, packaging, mounting, and wiring. This increases the time required for these processes and manufacturing costs. A light-emitting device comprising multiple LEDs fabricated and connected in series at the wafer level is proposed. Summary of the Invention

[0006] The present disclosure describes a light emitting device that may exhibit improved reliability or other improved characteristics, and may also ameliorate certain shortcomings of existing light emitting devices.

[0007] According to one aspect of the present invention, a light-emitting device is provided, comprising a substrate extending in a first direction and a second direction; first to fourth light-emitting structures, which are spaced apart from each other in the first direction and the second direction and arranged in a matrix form on the substrate; a plurality of first interconnection layer structures connecting the first light-emitting structure to the second light-emitting structure; a second interconnection layer structure connecting the second light-emitting structure to the third light-emitting structure; and a plurality of third interconnection layer structures connecting the third light-emitting structure to the fourth light-emitting structure.

[0008] According to one aspect of the present invention, which may include the above-mentioned various aspects, a light-emitting device is provided, including: a first light-emitting structure and a second light-emitting structure, each of which includes a first conductive nitride semiconductor layer, an active layer arranged above the first conductive nitride semiconductor layer, and a second conductive nitride semiconductor layer arranged above the active layer, the first light-emitting structure and the second light-emitting structure are horizontally spaced apart from each other; and an interconnection layer connecting the first conductive nitride semiconductor layer of the first light-emitting structure to the second conductive nitride semiconductor layer of the second light-emitting structure, wherein the second interconnection layer is a conductive layer including two parts, and the two parts are connected to at least two corresponding parts of each of the first conductive nitride semiconductor layer of the first light-emitting structure and the second conductive nitride semiconductor layer of the second light-emitting structure.

[0009] According to another aspect of the present invention, a light-emitting device is provided, comprising a substrate extending in a first direction and a second direction; first to fourth light-emitting structures, which are spaced apart from each other in the first direction and the second direction and arranged in a matrix form on the substrate; a plurality of first electrodes connected to the first light-emitting structure; and a plurality of second electrodes connected to the second light-emitting structure; wherein each of the first to fourth light-emitting structures comprises a first conductive nitride semiconductor layer, an active layer arranged above the first conductive nitride semiconductor layer, and a second conductive nitride semiconductor layer arranged above the active layer, and the horizontal width of each of the plurality of first electrodes and the plurality of second electrodes is smaller than the horizontal width of the second conductive nitride semiconductor layer of any one of the first to fourth light-emitting structures. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Embodiments of the present inventive concept will be more clearly understood through the following detailed description with reference to the accompanying drawings, in which:

[0011] Figure 1 is a circuit diagram of a light emitting device according to an example embodiment;

[0012] Figure 2A is a layout diagram of a light emitting device according to an example embodiment;

[0013] Figure 2B It is along Figure 2A An exemplary cross-sectional view taken along line 2I-2I';

[0014] Figure 2C It is along Figure 2A An exemplary cross-sectional view taken along line 2II-2II';

[0015] Figure 2D It is along Figure 2AAn exemplary cross-sectional view taken along line 2III-2III';

[0016] Figure 2E It is along Figure 2A An exemplary cross-sectional view taken along line 2IV-2IV';

[0017] Figures 3A to 3C 、 Figures 4A to 4C 、 Figures 5A to 5C 、 Figures 6A to 6C 、 7A to 7C as well as Figure 8 are cross-sectional views and layout views for describing a method of manufacturing a light emitting device according to example embodiments;

[0018] Figure 9 is a circuit diagram of a light emitting device according to an example embodiment;

[0019] Figure 10 is a layout diagram of a light emitting device according to an example embodiment; and

[0020] Figures 11A to 11E is a partial cross-sectional view for describing effects of the light emitting device according to one or more embodiments. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the present inventive concept will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same configured elements in the drawings, and repeated description thereof will be omitted.

[0022] Figure 1 Is a circuit diagram of a light emitting device 10 according to an exemplary embodiment.

[0023] Reference Figure 1 The light-emitting device 10 may include first to fourth light-emitting structures LED1, LED2, LED3 and LED4. The first to fourth light-emitting structures LED1, LED2, LED3 and LED4 may be, for example, a group of light-emitting diodes (LEDs). The first to fourth light-emitting structures LED1, LED2, LED3 and LED4 may be connected in series between a first external terminal EXT1 and a second external terminal EXT2. The P junction of the first light-emitting structure LED 1 may be connected to the first external terminal EXT1. The N junction of the fourth light-emitting structure LED 4 may be connected to the second external terminal EXT2. Each external terminal may be a conductive terminal connected to a device or component outside the light-emitting device 10. The N junction of the first light-emitting structure LED1 may be connected to the P junction of the second light-emitting structure LED2. The N junction of the second light-emitting structure LED2 may be connected to the P junction of the third light-emitting structure LED3. The N junction of the third light-emitting structure LED3 may be connected to the P junction of the fourth light-emitting structure LED4.

[0024] When the voltage drop generated between both ends of each of the first to fourth light emitting structures LED1, LED2, LED3 and LED4 is Vd, Figure 1 The total voltage drop across the first external terminal EXT1 and the second external terminal EXT2 of the illustrated light-emitting device 10 is 4Vd. For example, if the voltage drop across each of the first to fourth light-emitting structures LED1, LED2, LED3, and LED4 is 3V, a 12V voltage drop can be generated between the first external terminal EXT1 and the second external terminal EXT2. Due to this series connection structure, the alternating current (AC) can be converted to a high DC voltage during the direct current (DC) conversion process, thereby improving energy efficiency.

[0025] Figure 2A is a layout diagram of a light emitting device 10 according to an example embodiment. Figure 2B It is along Figure 2A A cross-sectional view taken along line 2I-2I'. Figure 2C It is along Figure 2A A cross-sectional view taken along line 2II-2II'. Figure 2D It is along Figure 2A A cross-sectional view taken along line 2III-2III'. Figure 2E It is along Figure 2A A cross-sectional view taken along line 2IV-2IV'.

[0026] Reference Figures 2A to 2E According to an exemplary embodiment, a light-emitting device 10 may include a substrate 101, first to fourth light-emitting structures LED1, LED2, LED3, and LED4, a first insulating pattern 140, a plurality of contact electrodes 150, a second insulating pattern 160, a conductive pattern 170, a third insulating pattern 180, and a plurality of first electrodes 191 and a plurality of second electrodes 192. It will be understood that although the terms first, second, third, etc. are used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. Unless the context indicates otherwise, these terms are merely used to distinguish one element, component, region, layer, or portion from another, such as as a naming convention. Thus, a first element, component, region, layer, or portion discussed below in one section of the specification may be referred to as a second element, component, region, layer, or portion in another section of the specification or in the claims without departing from the teachings of the present invention. In addition, in some cases, even if the terms "first", "second", etc. are not used in the specification, it can still be referred to as "first" or "second" in the claims in order to distinguish different elements claimed for protection from each other.

[0027] The substrate 101 may be provided as a growth substrate for the first to fourth light emitting structures LED1, LED2, LED3, and LED4, and may include an insulating material or a semiconductor material such as sapphire, Si, SiC, MgAl2O4, MgO, LiAlO2, LiGaO2, and GaN. However, the present disclosure is not limited thereto, and the substrate 101 may be conductive. As a growth substrate for the nitride semiconductor layer, the sapphire substrate is a crystal having electrical insulation and hexa-rhombo R3c symmetry, which has a symmetry in the c-axis direction and a-axis direction, respectively. and The lattice constant of the substrate is 0.001, and it has a C-plane (0001), an A-plane (1120), and an R-plane (1102). In this case, the C-plane is relatively easy to grow nitride thin films from and is stable at high temperatures. Therefore, the C-plane is mainly used as a substrate for nitride growth.

[0028] As shown in the figure, a plurality of concave-convex structures 102 can be formed on the upper surface of the substrate 101 (i.e., the surface on which the first to fourth light-emitting structures LED1, LED2, LED3, and LED4 are arranged), and the crystallinity and light extraction efficiency of the nitride semiconductor layer stacked above the substrate 101 can be improved by the plurality of concave-convex structures 102. Figure 2B and Figure 2C The plurality of concave-convex structures 102 are shown as having a dome-shaped convex shape, but are not limited thereto. For example, the plurality of concave-convex structures 102 may be formed in various shapes, such as a quadrilateral, a triangle, etc. The plurality of concave-convex structures 102 may be optionally formed, or may be omitted.

[0029] The two directions parallel to the lower surface of the substrate 101 and extending along the lower surface of the substrate 101 (i.e., the surface on which the plurality of concave-convex structures 102 are not formed) are defined as the first direction X and the second direction Y, respectively, while the direction substantially perpendicular to the lower surface of the substrate 101 is defined as the third direction Z. For example, the first direction X and the second direction Y may be substantially perpendicular to each other. The first direction X and the second direction Y are directions substantially perpendicular to the third direction Z. The directions indicated by arrows in the drawings and the directions opposite thereto are described as the same direction. The definitions of the above directions are the same in all subsequent drawings.

[0030] If necessary, the substrate 101 can be removed in a subsequent process. For example, the plurality of first conductive nitride semiconductor layers 110, the plurality of active layers 120, and the plurality of second conductive nitride semiconductor layers 130 can be provided as a growth substrate and can be removed through a separation process. Specifically, when the substrate 101 is conductive, the substrate 101 can be removed to prevent short circuits between the first to fourth light-emitting structures LED1, LED2, LED3, and LED4. Separation of the substrate 101 can be performed by methods such as laser lift-off or chemical lift-off.

[0031] According to one or more embodiments, a buffer layer may be further provided on the upper surface of the substrate 101. The buffer layer is a lattice defect reducing member of the semiconductor layer formed above the substrate 101, and may include an undoped semiconductor layer including nitride or the like. The buffer layer may reduce the lattice constant difference between the substrate 101 including, for example, sapphire and the first conductive nitride semiconductor layer 110 including GaN stacked on the upper surface of the substrate 101, and may increase the crystallinity of the first conductive nitride semiconductor layer. The buffer layer may include undoped GaN, AlN, InGaN, etc., and may be grown to tens to hundreds of nanometers at a temperature of 500°C to 600°C. Here, "undoped" may mean that the semiconductor layer is not doped with impurities alone, but the undoped semiconductor layer may include incidental impurities at a concentration level in the semiconductor layer. For example, when a gallium nitride semiconductor layer is grown by using metal organic chemical vapor deposition (MOCVD), it may include about 10 14 / cm 3 to 10 18 / cm 3 However, the buffer layer is not an essential element in this embodiment and may be omitted in some cases.

[0032] For ease of description, spatially relative terms such as "under," "beneath," "lower," "above," and "upper" may be used herein to describe the relationship of one element or feature to another element or feature as shown in the accompanying drawings. It will be understood that these spatially relative terms are intended to encompass different orientations of the device in use or operation other than the orientation shown in the figures. For example, if the device in the figures were turned over, elements described as "under" or "below" other elements or features would be oriented "above" the other elements or features. Thus, the term "below" can encompass both above and below orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations), and the spatially relative descriptions used herein interpreted accordingly.

[0033] Figures 2A to 2C The first to fourth light emitting structures LED1, LED2, LED3 and LED4 shown in FIG may correspond to Figure 1 The first to fourth light-emitting structures LED1, LED2, LED3, and LED4 shown in the circuit diagram of FIG. The first to fourth light-emitting structures LED1, LED2, LED3, and LED4 may be arranged in a matrix above the substrate 101. The first light-emitting structure LED1 may be spaced apart from the second light-emitting structure LED2 in the second direction Y. The second light-emitting structure LED2 may be spaced apart from the third light-emitting structure LED3 in the first direction X. The third light-emitting structure LED3 may be spaced apart from the fourth light-emitting structure LED4 in the second direction Y. The fourth light-emitting structure LED4 may be spaced apart from the first light-emitting structure LED1 in the first direction X.

[0034] The first to fourth light emitting structures LED1, LED2, LED3 and LED4 have a structure in which a plurality of semiconductor layers are stacked, and a plurality of first conductive nitride semiconductor layers 110, a plurality of active layers 120 and a plurality of second conductive nitride semiconductor layers 130 may be sequentially stacked above the substrate 101. According to one or more embodiments, the plurality of first conductive nitride semiconductor layers 110 may be N-type nitride semiconductor layers, and the plurality of second conductive nitride semiconductor layers 130 may be P-type nitride semiconductor layers. According to one or more embodiments, the plurality of first conductive nitride semiconductor layers 110 may be P-type nitride semiconductor layers, and the plurality of second conductive nitride semiconductor layers 130 may be N-type nitride semiconductor layers. According to one or more embodiments, the plurality of first conductive nitride semiconductor layers 110 and the plurality of second conductive nitride semiconductor layers 130 may include a semiconductor layer satisfying the composition formula Al x In y Ga (1-x-y) N (where 0≤x≤1, 0≤y≤1, and 0≤x+y≤1). For example, the plurality of first conductive nitride semiconductor layers 110 and the plurality of second conductive nitride semiconductor layers 130 may include materials such as GaN, AlGaN, InGaN, AlInGaN, etc.

[0035] The plurality of active layers 120 may be arranged between the plurality of first conductive nitride semiconductor layers 110 and the plurality of second conductive nitride semiconductor layers 130. The plurality of active layers 120 may emit light having a predetermined energy through recombination of electrons and holes. The plurality of active layers 120 may include a material having an energy bandgap smaller than that of the plurality of first conductive nitride semiconductor layers 110 and the plurality of second conductive nitride semiconductor layers 130. For example, when the plurality of first conductive nitride semiconductor layers 110 and the plurality of second conductive nitride semiconductor layers 130 are GaN compound semiconductors, the plurality of active layers 120 may include an InGaN compound semiconductor having an energy bandgap smaller than that of GaN. According to one or more embodiments, the plurality of active layers 120 may include a multi-quantum well (MQW) structure in which quantum well layers and quantum barrier layers are alternately stacked. According to one or more embodiments, the plurality of active layers 120 may include an alternating stack structure of InGaN / GaN. However, the present inventive concept is not limited thereto. The plurality of active layers 120 may include a single quantum well (SQW) structure.

[0036] The first to fourth light emitting structures LED1, LED2, LED3 and LED4 may include an etching region E, wherein a portion of the plurality of second conductive nitride semiconductor layers 130, the plurality of active layers 120 and the plurality of first conductive nitride semiconductor layers 110 may be etched, and a plurality of mesa regions M, also described as rising regions or protrusion regions, are defined by the etching region E.

[0037] According to one or more embodiments, the plurality of second conductive nitride semiconductor layers 130 may have an asymmetric structure. According to one or more embodiments, the layout shape of the plurality of second conductive nitride semiconductor layers 130 may be T-shaped, or more generally, may be a shape having two portions, wherein the first portion is wider in the X direction and the second portion is not as wide as the first portion in the X direction.

[0038] According to one or more embodiments, a width of a portion of the second conductive nitride semiconductor layer 130 of the first light emitting structure LED1 (the portion adjacent to the second light emitting structure LED2) in the first direction X may be smaller than a width of a portion of the second conductive nitride semiconductor layer 130 of the first light emitting structure LED1 (the portion away from the second light emitting structure LED2) in the first direction X. According to one or more embodiments, a length of an edge L1B of the second conductive nitride semiconductor layer 130 included in the first light emitting structure LED1 (the edge L1B adjacent to the second light emitting structure LED2 and substantially parallel to the first direction) may be smaller than a length of an edge L1A opposite to the edge L1B.

[0039] According to one or more embodiments, a width of a portion of the second conductive nitride semiconductor layer 130 of the second light emitting structure LED2 (the portion adjacent to the first light emitting structure LED1) in the first direction X may be greater than a width of a portion of the second conductive nitride semiconductor layer 130 of the second light emitting structure LED2 (the portion away from the first light emitting structure LED1) in the first direction X. According to one or more embodiments, a length of an edge L2A of the second conductive nitride semiconductor layer 130 included in the second light emitting structure LED2 in the first direction X (the edge L2A adjacent to the first light emitting structure LED1 and substantially parallel to the first direction) may be greater than a length of an edge L2B facing the edge L2A.

[0040] According to one or more embodiments, the width of the second conductive nitride semiconductor layer 130 included in the third light emitting structure LED3 (the portion adjacent to the fourth light emitting structure LED4) in the first direction X may be smaller than the width of a portion of the second conductive nitride semiconductor layer 130 included in the third light emitting structure LED3 (the portion away from the fourth light emitting structure LED4) in the first direction X. According to one or more embodiments, the length of an edge L3B of the second conductive nitride semiconductor layer 130 included in the third light emitting structure LED3 (the edge L3B adjacent to the fourth light emitting structure LED2 and substantially parallel to the first direction) may be smaller than the length of an edge L3A facing the edge L3B.

[0041] According to one or more embodiments, the width of the second conductive nitride semiconductor layer 130 of the fourth light emitting structure LED4 (the portion adjacent to the third light emitting structure LED3) in the first direction X may be greater than the width of a portion of the second conductive nitride semiconductor layer 130 of the fourth light emitting structure LED4 (the portion away from the third light emitting structure LED3) in the first direction X. According to one or more embodiments, the length of an edge L4A of the second conductive nitride semiconductor layer 130 included in the fourth light emitting structure LED4 (the edge L4A adjacent to the third light emitting structure LED3 and substantially parallel to the first direction) may be greater than the length of an edge L4B facing the edge L4A.

[0042] A space for forming a second contact hole CNT2, described later, may be provided in a portion of the second conductive nitride semiconductor layer 130 of the first light-emitting structure LED1 (the portion adjacent to the second light-emitting structure LED2). Furthermore, a space for forming a first contact hole CNT1, described later, may be provided in a portion of the second conductive nitride semiconductor layer 130 of the second light-emitting structure LED2 (the portion adjacent to the first light-emitting structure LED1). Furthermore, a space for forming a second contact hole CNT2, described later, may be provided in a portion of the first conductive nitride semiconductor layer 110 of the third light-emitting structure LED3 (the portion adjacent to the fourth light-emitting structure LED1). Furthermore, a space for forming a first contact hole CNT1, described later, may be provided in a portion of the second conductive nitride semiconductor layer 130 of the fourth light-emitting structure LED4 (the portion adjacent to the third light-emitting structure LED3).

[0043] The first insulating pattern 140 may be disposed on one side of the mesa region M so as to cover an edge of the active layer 120. The first insulating pattern 140 may be disposed over the first to fourth light emitting structures LED1, LED2, LED3, and LED4 so as to cover at least a portion of each of the plurality of mesa regions M of the first to fourth light emitting structures LED1, LED2, LED3, and LED4.

[0044] According to one or more embodiments, the first insulating pattern 140 may include an insulating material. According to one or more embodiments, the first insulating pattern 140 may include silicon oxide or silicon nitride. According to one or more embodiments, the first insulating pattern 140 may include SiO2, SiN, SiO x N y , at least one of TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN and TiSiN.

[0045] The first insulating pattern 140 may include a plurality of openings that expose a portion of the upper surface of the plurality of second conductive nitride semiconductor layers 130 relative to the first insulating pattern 140. The contact electrode 150 may be arranged above the upper surface of the plurality of second conductive nitride semiconductor layers 130 exposed by the first insulating pattern 140. The plurality of contact electrodes 150 may contact the upper surface of the plurality of second conductive nitride semiconductor layers 130. The plurality of contact electrodes 150 may be configured to be electrically connected to the plurality of second conductive nitride semiconductor layers 130. According to one or more embodiments, the plurality of contact electrodes 150 may be omitted. In this case, the first current diffusion layer CD1 and the second current diffusion layer CD2 described later may contact the upper surface of the plurality of second conductive nitride semiconductor layers 130. As used herein, components described as "connected" or "electrically connected" may be directly connected or directly electrically connected, or indirectly connected or indirectly electrically connected, through components connected therebetween. However, the term "contact" refers to direct connection (e.g., touching) without an intervening element at the contact point between them. Components described as electrically connected are configured so that a signal can reach from one component to another. Thus, a conductive component physically connected to an electrically insulating component is not electrically connected to the electrically insulating component.

[0046] The plurality of contact electrodes 150 may include a plurality of reflective electrode layers 151. The plurality of reflective electrode layers 151 may cover a portion of the upper surface of the plurality of second conductive nitride semiconductor layers 130. The plurality of reflective electrode layers 151 may include one metal or metal alloy selected from the group consisting of Cu, Al, Ni, Ag, Au, Pt, Sn, Pb, Ti, Cr, Pd, In, and Zn, or C. In particular, when the plurality of reflective electrode layers 151 include a material having a high reflectivity, such as aluminum or silver, the plurality of reflective electrode layers 151 reflect light generated in the plurality of active layers 120, thereby improving the luminous efficiency of the reflective electrode layers 151. According to one or more embodiments, the plurality of reflective electrode layers 151 may include a multilayer structure in which layers of different compositions are repeatedly stacked.

[0047] The conductive pattern 170, the plurality of first electrodes 191, and the plurality of second electrodes 192, which will be described later, may also include a metal or a metal alloy selected from the group consisting of Cu, Al, Ni, Ag, Au, Pt, Sn, Pb, Ti, Cr, Pd, In, and Zn or C.

[0048] The plurality of contact electrodes 150 may further include a plurality of coating layers 152 covering the plurality of reflective electrode layers 151. Figure 2B, the multiple coating layers 152 are shown as covering the top and sides (e.g., top and side surfaces) of the multiple reflective electrode layers 151, but are not limited thereto. For example, the multiple coating layers 152 may only cover the top surfaces of the multiple reflective electrode layers 151. In addition, the multiple coating layers 152 may be selectively arranged and may be omitted in some cases. According to one or more embodiments, the multiple coating layers 152 may include an insulating material. According to one or more embodiments, the multiple coating layers 152 may include a conductive material or a semiconductor material.

[0049] The second insulating pattern 160 may be arranged above the plurality of first conductive nitride semiconductor layers 110 and the plurality of second conductive nitride semiconductor layers 130 exposed to the plurality of contact electrodes 150, and above the first insulating pattern 140. The second insulating pattern 160 may cover the side portions (e.g., sidewalls or side surfaces) between adjacent plurality of first conductive nitride semiconductor layers 110. The second insulating pattern 160 may contact the side surfaces (e.g., sidewalls) of the plurality of first conductive nitride semiconductor layers 110. The first insulating pattern 140 may not be arranged on the side surfaces of the plurality of first conductive nitride semiconductor layers 110 between adjacent structures of the plurality of first conductive nitride semiconductor layers 110. The second insulating pattern 160 may include SiO2, SiN, SiO x N y , TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN and TiSiN. It should be noted that from the perspective of the LED array, the multiple first conductive nitride semiconductor layers 110 on the single substrate 101 can be collectively referred to as a conductive nitride semiconductor layer, or can be separately referred to as multiple first conductive nitride semiconductor layers 110.

[0050] When the first insulating pattern 140 and the second insulating pattern 160 have the same composition, a single insulating layer may be formed (e.g., they may be formed in a single process rather than separate processes). However, the embodiment is not limited thereto. When the first insulating pattern 140 and the second insulating pattern 160 have different compositions, two different layers may be constructed and may be formed in different processes.

[0051] The second insulating pattern 160 may include a plurality of first contact holes CNT1 and a plurality of second contact holes CNT2, which are openings that expose at least a portion of the underlying layer. The plurality of first contact holes CNT1 may expose a portion of the upper surface of the contact electrode 150. The plurality of second contact holes CNT2 may expose a portion of the upper surface of the plurality of first conductive nitride semiconductor layers 110.

[0052] The conductive pattern 170 may be arranged over the second insulating pattern 160. The conductive pattern 170 may include a first current diffusion layer CD1, a second current diffusion layer CD2, and first to third interconnect layers IM1, IM2, and IM3. Each of these layers is also described herein as a region or portion of the conductive pattern 170, or as a structure (e.g., a current diffusion layer structure or an interconnect layer structure).

[0053] According to one or more embodiments, a plurality of first interconnect layers (e.g., portions) IM1 may be configured to electrically connect the first light-emitting structure LED1 to the second light-emitting structure LED2. According to one or more embodiments, the plurality of first interconnect layers (e.g., portions) IM1 may be configured to electrically connect the first conductive nitride semiconductor layer 110 of the first light-emitting structure LED1 to the second conductive nitride semiconductor layer 130 of the second light-emitting structure LED2. According to one or more embodiments, the plurality of first interconnect layers IM1 may contact the plurality of contact electrodes 150 above the first conductive nitride semiconductor layer 110 of the first light-emitting structure LED1 and the second light-emitting structure LED2. According to one or more embodiments, the plurality of first interconnect layers IM1 may contact the first conductive nitride semiconductor layer 110 of the first light-emitting structure LED1 in the second contact hole CNT2. According to one or more embodiments, the plurality of first interconnect layers IM1 may contact the plurality of contact electrodes 150 above the second light-emitting structure LED2 in the first contact hole CNT1. According to one or more embodiments, the plurality of first interconnect layers IM1 may be provided in plurality. According to one or more embodiments, the plurality of first interconnect layers IM1 may be provided in two. According to one or more embodiments, the plurality of first interconnect layers IM1 may extend longitudinally in the second direction Y. An object extending longitudinally in a specific direction as described herein has a length greater than a width, such that the length direction is the specific direction. According to one or more embodiments, a plurality of first interconnect layers IM1 may be arranged spaced apart from each other, and a first current spreading layer (eg, portion) CD1 may be arranged therebetween.

[0054] According to one or more embodiments, the second interconnect layer IM2 may be configured to electrically connect the second light-emitting structure LED2 to the third light-emitting structure LED3. According to one or more embodiments, the second interconnect layer IM2 may be configured to electrically connect the first conductive nitride semiconductor layer 110 of the second light-emitting structure LED2 to the second conductive nitride semiconductor layer 130 of the third light-emitting structure LED3. According to one or more embodiments, the second interconnect layer IM2 may contact the first conductive nitride semiconductor layer 110 of the second light-emitting structure LED2 and the plurality of contact electrodes 150 above the third light-emitting structure LED2. According to one or more embodiments, the second interconnect layer IM2 may contact the contact electrodes 150 above the third light-emitting structure LED3 in the plurality of first contact holes CNT1. According to one or more embodiments, the second interconnect layer IM2 may contact the first conductive nitride semiconductor layer 110 of the second light-emitting structure LED2 in the plurality of second contact holes CNT2. The second interconnect layer IM2 may be connected to at least two portions of the first conductive nitride semiconductor layer 110 of the second light-emitting structure LED2 and the second conductive nitride semiconductor layer 130 of the third light-emitting structure LED3, respectively.

[0055] According to one or more embodiments, the second interconnect layer IM2 may extend longitudinally in the first direction X. According to one or more embodiments, the length of the second interconnect layer IM2 in the first direction X may be greater than the length of the first to fourth light-emitting structures LED1, LED2, LED3, and LED4 in the first direction X, and may be greater than the length of the array structure formed by the first to fourth light-emitting structures LED1, LED2, LED3, and LED4 in the first direction X. According to one or more embodiments, the length of each of the second interconnect layers IM2 in the first direction X is greater than the sum of the lengths of each of the plurality of second conductive nitride semiconductor layers 130 included in the second light-emitting structure LED2 and the third light-emitting structure LED4, measured over an X-square. According to one or more embodiments, the layout shape of the second interconnect layer IM2 is W-shaped (or E-shaped or M-shaped depending on rotational orientation). According to one or more embodiments, the second interconnect layer IM2 may surround a portion of each of the first current spreading layer CD1 and the second current spreading layer CD2.

[0056] According to one or more embodiments, the plurality of third interconnect layers IM3 may be configured to electrically connect the third light-emitting structure LED3 to the fourth light-emitting structure LED4. According to one or more embodiments, the plurality of third interconnect layers IM3 may be configured to electrically connect the first conductive nitride semiconductor layer 110 of the third light-emitting structure LED3 to the second conductive nitride semiconductor layer 130 of the fourth light-emitting structure LED4. According to one or more embodiments, the plurality of third interconnect layers IM3 may contact the first conductive nitride semiconductor layer 110 of the third light-emitting structure LED3 and the plurality of contact electrodes 150 above the fourth light-emitting structure LED4. According to one or more embodiments, the plurality of third interconnect layers IM3 may contact the first conductive nitride semiconductor layer 110 of the third light-emitting structure LED3 in the second contact hole CNT2. According to one or more embodiments, the plurality of third interconnect layers IM3 may contact the plurality of contact electrodes 150 above the fourth light-emitting structure LED4 in the first contact hole CNT1. According to one or more embodiments, the plurality of third interconnect layers IM3 may be provided in plurality. According to one or more embodiments, the plurality of third interconnect layers IM3 may be provided as two separate layer structures. According to one or more embodiments, the plurality of interconnect layers IM3 may extend longitudinally in the second direction Y. According to one or more embodiments, the plurality of third interconnection layers IM3 may be spaced apart from each other with the second current spreading layer CD2 disposed therebetween.

[0057] Can be obtained from Figures 2A to 2D As can be seen, the plurality of first interconnect layer structures (e.g., first interconnect layer IM1) can be conductive structures that are horizontally separated from each other (e.g., in a first direction X), each of which includes at least a portion formed at a first vertical height above the substrate (e.g., in the Z direction). In addition, the plurality of third interconnect layer structures (e.g., third interconnect layer IM3) can be conductive structures that are each horizontally separated from each other and from the plurality of first interconnect layer structures (e.g., in the X direction), each of which includes at least a portion formed at the same first vertical height above the substrate (e.g., in the Z direction). In addition, the second interconnect layer structure (e.g., second interconnect layer IM2) can be a conductive structure that is horizontally separated from the plurality of first interconnect layer structures and the plurality of third interconnect layer structures. The second interconnect layer structure can also include at least a portion formed at the same first vertical height above the substrate. As also shown, the conductive pattern 170 and therefore the interconnect layers (e.g., IM1, IM2, and IM3) are conformally formed on one or more layers below the interconnect layer.

[0058] According to one or more embodiments, the first current spreading layer CD1 may be arranged above the first light-emitting structure LED1 and the second light-emitting structure LED2. According to one or more embodiments, the layout shape of the first current spreading layer CD1 may be T-shaped. According to one or more embodiments, the first current spreading layer CD1 may extend longitudinally in the second direction Y. According to one or more embodiments, the length of the first current spreading layer CD1 in the second direction Y may be greater than the length of each of the first to fourth light-emitting structures LED1, LED2, LED3, and LED4 in the second direction Y. The length of the first current spreading layer CD1 in the second direction Y may be greater than the length of each of the plurality of first interconnect layers IM1 and the plurality of third interconnect layers IM3 in the second direction Y.

[0059] According to one or more embodiments, the first current spreading layer CD1 may be horizontally spaced apart from the plurality of first interconnect layers IM1, the second interconnect layers IM2, and the plurality of third interconnect layers IM3. According to one or more embodiments, the first current spreading layer CD1 may be insulated from the plurality of first interconnect layers IM1, the second interconnect layers IM2, and the plurality of third interconnect layers IM3. According to one or more embodiments, the first current spreading layer CD1 may be connected to the second conductive nitride semiconductor layer 130 of the first light-emitting structure LED1 through the plurality of first contact holes CNT1. According to one or more embodiments, the first current spreading layer CD1 may be in contact with the plurality of contact electrodes 150 above the first light-emitting structure LED1 through the plurality of first contact holes CNT1.

[0060] According to one or more embodiments, the second current spreading layer CD2 may be arranged above the third light-emitting structure LED3 and the fourth light-emitting structure LED4. According to one or more embodiments, the layout shape of the second current spreading layer CD2 may be approximately T-shaped. According to one or more embodiments, the second current spreading layer CD2 may extend longitudinally in the second direction Y. According to one or more embodiments, the length of the second current spreading layer CD2 in the second direction Y may be greater than the length of each of the first to fourth light-emitting structures LED1, LED2, LED3, and LED4 in the second direction Y. The length of the second current spreading layer CD2 in the second direction Y may be greater than the length of each of the plurality of first interconnect layers IM1 and the plurality of third interconnect layers IM3 in the second direction Y.

[0061] According to one or more embodiments, the second current spreading layer CD2 may be horizontally spaced apart from the plurality of first interconnect layers IM1, the second interconnect layer IM2, and the third interconnect layer IM3. According to one or more embodiments, the second current spreading layer CD2 may be insulated from the plurality of first interconnect layers IM1, the second interconnect layer IM2, and the third interconnect layer IM3. According to one or more embodiments, the second current spreading layer CD2 may be connected to the first conductive nitride semiconductor layer 110 of the fourth light emitting structure LED4 through the second contact holes CNT2. According to one or more embodiments, the second current spreading layer CD2 may be in contact with the first conductive nitride semiconductor layer 110 of the fourth light emitting structure LED4 through the plurality of second contact holes CNT2.

[0062] In a typical light-emitting device including LEDs connected in series, if a fault occurs in one of the connection layers between the multiple LEDs, the entire LED array will not function. According to one or more embodiments, multiple electrical paths are provided connecting the first light-emitting structure to the fourth light-emitting structure, LED1, LED2, LED3, and LED4, in series. Even if contact defects or unintentional open circuits occur in some of the connection layers, the LEDs can still function normally.

[0063] The third insulating pattern 180 may be partially arranged above the first current diffusion layer CD1 and the second current diffusion layer CD2 and the plurality of first interconnect layers IM1, second interconnect layers IM2, and third interconnect layers IM3. The third insulating pattern 180 may cover at least a portion of the first current diffusion layer CD1 and the second current diffusion layer CD2 and the plurality of first interconnect layers IM1, second interconnect layers IM2, and third interconnect layers IM3. The third insulating pattern 180 may include an insulating material. The third insulating pattern 180 may include SiO2, SiN, SiO x N y , TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, and TiSiN. The third insulating pattern 180 may include an opening exposing a portion of the first current spreading layer CD1 and the second current spreading layer CD2. The opening of the third insulating pattern 180 may be arranged above the mesa region M.

[0064] A plurality of first electrodes 191 and a plurality of second electrodes 192 may be arranged over the third insulating pattern 180, the first current spreading layer CD1, and the second current spreading layer CD2. The plurality of first electrodes 191 may be arranged over the first current spreading layer CD1, and the plurality of second electrodes 192 may be arranged over the second current spreading layer CD2. The plurality of first electrodes 191 and the plurality of second electrodes 192 may be arranged over the plurality of first conductive nitride semiconductor layers 110, respectively. According to one or more embodiments, the width of the plurality of first electrodes 191 and the plurality of second electrodes 192 may be smaller than the width of the plurality of second conductive nitride semiconductor layers 130. According to one or more embodiments, the width of the plurality of first electrodes 191 and the plurality of second electrodes 192 (e.g., in the X direction and / or the Y direction) may be smaller than the width of the plurality of second conductive nitride semiconductor layers 130. According to one or more embodiments, the plurality of first electrodes 191 may be arranged over the first light-emitting structure LED1 and the second light-emitting structure LED2. The plurality of second electrodes 192 may be arranged over the third light-emitting structure LED3 and the fourth light-emitting structure LED4. According to one or more embodiments, the entirety of each of the plurality of first electrodes 191 and the plurality of second electrodes 192 may vertically overlap with the second conductive nitride semiconductor layer 130. According to one or more embodiments, the plurality of first electrodes 191 and the plurality of second electrodes 192 may be arranged only above the mesa region M. According to one or more embodiments, the plurality of first electrodes 191 and the plurality of second electrodes 192 may not be arranged above the etched region E and, therefore, may not be formed on the isolation region formed between the different light emitting structures LED1, LED2, LED3, and LED4. In this manner, the isolation region does not vertically overlap with the plurality of first electrodes 191 and the plurality of second electrodes 192. The plurality of first electrodes 191 and the plurality of second electrodes 192 may be conductive pads configured to receive input signals.

[0065] The plurality of first electrodes 191 and the plurality of second electrodes 192 may include, for example, an under bump metal (UBM) layer. The plurality of first electrodes 191 and the plurality of second electrodes 192 may be formed with grooves in which a conductive adhesive such as solder is placed. The solder as an external terminal may correspond to Figure 1 According to one or more embodiments, according to the plurality of first electrodes 191 and the plurality of second electrodes 192, and the solder disposed thereon is disposed over the plurality of mesa regions M, even when a defect occurs in the second insulating pattern 160 disposed on the sidewalls of the plurality of first conductive semiconductor layers 110, a short circuit can be prevented from occurring.

[0066] Figures 3A to 3C 、 Figures 4A to 4C 、 Figures 5A to 5C 、 Figures 6A to 6C、 7A to 7C as well as Figure 8 are cross-sectional views and layout views describing a method of manufacturing a light emitting device according to an exemplary embodiment. Figures 9 to 11E are cross-sectional views and layout views describing a method of manufacturing a light emitting device according to an exemplary embodiment.

[0067] More specifically, Figure 3A 、 Figure 4A 、 Figure 5A 、 Figure 6A 、 Figure 7A and Figure 8 schematically illustrates a layout of a mask used in a process for manufacturing a light emitting device according to one or more embodiments, and Figure 3B 、 Figure 4B 、 Figure 5B 、 Figure 6B and Figure 7B is a layout diagram according to the corresponding process, and Figure 3C 、 Figure 4C 、 Figure 5C 、 Figure 6C and Figure 7C is the corresponding cross-sectional view.

[0068] exist Figures 3A to 3C 、 Figures 4A to 4C 、 Figures 5A to 5C 、 Figures 6A to 6C 、 Figures 7A to 7C and Figure 8 In, with Figures 1 to 2B The same reference numerals in the drawings denote the same elements, and repeated descriptions may be omitted.

[0069] Reference Figures 3A to 3C , a substrate 101 having a concavo-convex structure may be provided. However, the present invention is not limited thereto, and the concavo-convex substrate 101 may be omitted. The substrate 101 may include materials such as sapphire, Si, SiC, MgAl2O4, MgO, LiAlO2, LiGaO2, and GaN. Although not shown in the figure, a buffer layer may be further formed over the substrate 101. The buffer layer may include doped GaN, AlN, InGaN, and the like.

[0070] By using metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE) methods, a first conductive nitride semiconductor material layer 111, an active material layer, and a second conductive nitride semiconductor material layer can be sequentially formed on the substrate 101. Here, the first conductive nitride semiconductor material layer 111 and the second conductive nitride semiconductor material layer can be an N-type nitride semiconductor layer and a P-type nitride semiconductor layer, respectively.

[0071] You can use Figure 3AThe first mask pattern M1 is used to etch the second conductive nitride semiconductor material layer and the active material layer, so that at least a portion of the first conductive nitride semiconductor material layer 111 is exposed. The shadow area of ​​the first mask pattern M1 is an area where a hard mask is arranged to prevent etching of the underlying layer, and the other area thereof is an etching area. The first mask pattern M1 can define the mesa region M of each light emitting structure.

[0072] After the mask pattern M1 is disposed over the substrate 101, the second conductive nitride semiconductor material layer and the active material layer may be wet etched or dry etched to form the second conductive nitride semiconductor layer 130 and the active layer 120. The shape of the first mask pattern M1 may be transferred to the second conductive nitride semiconductor layer 130 and the active layer 120 to form a mesa region M of a similar shape. Thus, the second conductive nitride semiconductor material layer and the active material layer may be separated from each other to form a plurality of second conductive nitride semiconductor layers 130 and a plurality of active layers 120. According to one or more embodiments, the first conductive nitride semiconductor material layer 111 may not be etched, and its upper surface may be only partially exposed. According to one or more embodiments, the first conductive nitride semiconductor material layer 111 may be etched to a predetermined depth by over-etching.

[0073] Reference Figures 4A to 4C After conformally forming a first insulating material layer over the front (eg, top) surface of the substrate 101, the first insulating material layer and the first conductive nitride semiconductor material layer 111 may be etched by the second mask pattern M2 (see Figure 3C ) to expose a portion of the substrate 101 above the etching region E, thereby forming the first to fourth light emitting structures LED1, LED2, LED3 and LED4. The first to fourth light emitting structures LED1, LED2, LED3 and LED4 may include a plurality of first conductive nitride semiconductor layers 110, a plurality of active layers 120 and a plurality of second conductive nitride semiconductor layers 130. At this time, after separating the first insulating material layer (see Figure 4C ) process can prevent the side surface of the mesa region M and the upper surface of the plurality of second conductive nitride semiconductor layers 130 from being contaminated. Subsequently, the first insulating material layer can be etched to form a first insulating pattern 140.

[0074] Reference Figures 5A to 5C , by using Figure 5AThe third mask pattern M3 in the embodiment of the present invention can be used to form a contact electrode 150 over the plurality of second conductive nitride semiconductor layers 130 above the mesa region M. After forming the third mask pattern M3 corresponding to the photoresist above the previous operation, an opening having a layout profile similar to that of the mesa region M can be formed in the first insulating pattern 140 above the mesa region M. The third mask pattern M3 can cover the etched region E and the edge of the mesa region M. When the first insulating pattern 140 is etched by a wet process, the first insulating pattern can be more recessed in the horizontal direction than the region exposed by the third mask pattern M3.

[0075] Subsequently, a reflective electrode material layer and a capping material layer are sequentially disposed over the third mask pattern M3, and the third mask pattern M3 can then be removed by an ashing or stripping process. As a result, the reflective electrode material layer and the capping material layer covering the reflective electrode material layer are removed, forming a plurality of contact electrodes 150 including a plurality of reflective electrode layers 151 and a plurality of coating layers 152. As described above, the first insulating pattern 140 is horizontally recessed, and the plurality of contact electrodes 150 may be spaced apart from the first insulating pattern 140 in the horizontal direction. However, the present invention is not limited thereto, and the first insulating pattern 140 may contact the plurality of contact electrodes 150.

[0076] When the plurality of coating layers 152 are provided by a sputtering process, since sputtering can be performed at various angles and step coverage is good, the plurality of coating layers 152 can cover the upper surfaces and side surfaces of the plurality of reflective electrode layers. On the other hand, when the coating material layer is provided by an electron beam process, the plurality of coating layers 152 can only cover the upper surfaces of the plurality of reflective electrode layers 151.

[0077] Reference Figures 6A to 6C , a second insulating pattern 160 may be formed, and the second insulating pattern 160 forms a plurality of first contact holes CNT1 and a plurality of second contact holes CNT2. After conformally disposing the second insulating material layer, the second insulating pattern 160 may be formed by using Figure 6A The second insulating material layer is patterned using the fourth mask pattern M4 in the embodiment to form a second insulating pattern 160. The second insulating pattern 160 may include the same composition as the first insulating pattern 140.

[0078] A plurality of first contact holes CNT1 and a plurality of second contact holes CNT2 of the second insulating pattern 160 may be provided to electrically connect adjacent light-emitting structures among the first to fourth light-emitting structures LED1, LED2, LED3, and LED4. The plurality of first contact holes CNT1 may partially expose a portion of the upper surface of the first conductive nitride semiconductor layer 110 of each of the first to fourth light-emitting structures. The plurality of first contact holes CNT1 may partially expose a portion of the upper surface of the first conductive nitride semiconductor layer 110 of each of the first to fourth light-emitting structures LED1, LED2, LED3, and LED4. The plurality of second contact holes CNT2 may partially expose the upper surface of the plurality of contact electrodes 150 above the second conductive nitride semiconductor layer 130 of each of the first to fourth light-emitting structures LED1, LED2, LED3, and LED4.

[0079] Reference 7A to 7C , forming a conductive pattern 170. The conductive pattern 170 may include a first current diffusion layer CD1, a second current diffusion layer CD2, and a first to third interconnect layers IM1, IM2, and IM3. A fifth mask pattern M5 may be set on the previous operation. The fifth mask pattern M5 may include an opening in an area where the conductive pattern 170 is not formed. After a conductive material layer is conformally disposed over the fifth mask pattern M5, the second insulating pattern 160, the contact electrode 150, and the first conductive nitride semiconductor layer 110, the fifth mask pattern M5 (and the conductive material formed thereon) may be removed by an ashing process or a stripping process to form the conductive pattern 170. The shape and composition of the conductive pattern 170 are similar to those of the reference Figure 2A and Figure 2C Those described are essentially the same.

[0080] Reference Figure 8 and Figures 2A to 2C , a third insulating pattern 180 , a plurality of first electrodes 191 , and a plurality of second electrodes 192 may be formed.

[0081] The third insulating material film may be conformally disposed over the conductive patterns 170 and the second insulating patterns 160 exposed therebetween. The third insulating material film may include the same composition as the first insulating pattern 140.

[0082] Then, after providing a sixth mask pattern M6 having an opening formed in the mesa region M, a third insulating pattern 180 may be provided by removing a portion of the second insulating pattern exposed by the sixth mask pattern M6 of the third insulating material film. The opening of the sixth mask pattern M6 may expose the upper surfaces of the first current spreading layer CD1 and the second current spreading layer CD2 arranged above the mesa region M. The width of the opening of the sixth mask pattern M6 (e.g., in the X direction and / or the Y direction) may be smaller than the width of the mesa region M. The plurality of first electrodes 191 and the plurality of second electrodes 192 may be provided using substantially the same method as that used to provide the plurality of contact electrodes 150 and the conductive pattern 170.

[0083] The plurality of first electrodes 191 and the plurality of second electrodes 192 may be, for example, UBM layers. The plurality of first electrodes 191 may be arranged above the mesa region M of the first light emitting structure LED1 and the second light emitting structure LED2. The plurality of second electrodes 192 may be arranged above the mesa region M of the third light emitting structure LED3 and the fourth light emitting structure LED4. The plurality of first electrodes 191 and the plurality of second electrodes 192 are shown as having a substantially rectangular shape, but are not limited thereto.

[0084] Figure 9 is a circuit diagram of a light emitting device 20 according to an exemplary embodiment. Figure 10 is a layout diagram of a light emitting device 20 according to an example embodiment. Figures 1 to 2C The same points are described, and the differences will be mainly described.

[0085] Reference Figure 9 , the light-emitting device 20 may include first to sixth light-emitting structures LED1, LED2, LED3, LED4, LED5 and LED6. The first to sixth light-emitting structures LED1, LED2, LED3, LED4, LED5 and LED6 may be connected in series between the first external terminal EXT1 and the second external terminal EXT2. The P junction of the first light-emitting structure LED1 may be electrically connected to the first external terminal EXT1. The N junction of the sixth light-emitting structure LED6 may be electrically connected to the second external terminal EXT2. The N junction of the first light-emitting structure LED1 may be connected to the P junction of the second light-emitting structure LED2. The N junction of the second light-emitting structure LED2 may be connected to the P junction of the third light-emitting structure LED3. The N junction of the third light-emitting structure LED3 may be connected to the P junction of the fourth light-emitting structure LED4. The N junction of the fourth light-emitting structure LED4 may be connected to the P junction of the fifth light-emitting structure LED5. The N junction of the fifth light-emitting structure LED5 may be connected to the P junction of the sixth light-emitting structure LED6. When the voltage drop due to primary light emission is generally Vd, Figure 9When six light-emitting structures are connected in series in the corresponding light-emitting device 20 , a voltage drop of 6 Vd occurs.

[0086] Furthermore, in a light-emitting device in which n light-emitting structures are connected in series using the above method, the P-junction of the first light-emitting structure and the N-junction of the n-th light-emitting structure are connected to external terminals, respectively. The N-junction of the k-1-th light-emitting structure can be connected to the P-junction of the k-th light-emitting structure. Here, n and k are integers and satisfy 1≤k≤n.

[0087] Reference Figure 10 , first to sixth light-emitting structures LED1, LED2, LED3, LED4, LED5, and LED6 may be provided. The first conductive nitride semiconductor layer 110 of the first light-emitting structure LED1 may be connected to the second conductive nitride conductive layer 130 of the second light-emitting structure LED2 via a plurality of first interconnect layers IM1. The first conductive nitride semiconductor layer 110 of the second light-emitting structure LED2 may be connected to the second conductive nitride conductive layer 130 of the third light-emitting structure LED3 via a plurality of first interconnect layers IM1. The first conductive nitride semiconductor layer 110 of the third light-emitting structure LED3 may be connected to the second conductive nitride conductive layer 130 of the fourth light-emitting structure LED4 via a second interconnect layer IM2. The first conductive nitride semiconductor layer 110 of the fourth light-emitting structure LED4 may be connected to the second conductive nitride conductive layer 130 of the fifth light-emitting structure LED5 via a plurality of third interconnect layers IM3. The first conductive nitride semiconductor layer 110 of the fifth light-emitting structure LED5 may be connected to the second conductive nitride conductive layer 130 of the sixth light-emitting structure LED6 via a plurality of third interconnect layers IM3. Figure 10 The shapes and compositions of the plurality of first interconnect layers IM1 , the second interconnect layers IM2 , and the plurality of third interconnect layers IM3 in FIG. 2 are substantially the same as those of the plurality of first interconnect layers IM1 , the second interconnect layers IM2 , and the plurality of third interconnect layers IM3 with reference to FIG. 2 .

[0088] Figures 11A to 11E is a partial cross-sectional view illustrating effects of a light emitting device according to one or more embodiments. Figures 11A to 11E An edge portion of a light emitting device included in a related art light emitting device is shown.

[0089] Reference Figure 11A The etched non-oxide p1 generated when forming the mesa region can be absorbed by the first conductive nitride semiconductor material layer 111. When the second mask pattern M2 is provided to separate the plurality of first conductive nitride semiconductor layers 110 from each other, the etched non-oxide p1 remains on the substrate 101.

[0090] Reference Figures 11A to 11BSuch etching of the non-oxide p1 may be used as a hard mask together with the second mask pattern M2. The plurality of first conductive nitride semiconductor layers 110 may be separated from each other, and a remaining portion 110R may be formed by partially etching failure.

[0091] Reference Figure 11D , wet etching can be performed. The arrows in the figure indicate the execution of wet etching. Figure 11C and Figure 11D Second insulating pattern 160 and conductive pattern 170 are conformally formed over remaining portion 110R. Second insulating pattern 160 and conductive pattern 170 formed over remaining portion 110R are susceptible to wet etching. Therefore, when the third insulating material layer is wet-etched to form third insulating pattern 180, defects DF may occur in second insulating pattern 160 and conductive pattern 170.

[0092] Reference Figure 11E When forming the plurality of first electrodes 191 or the plurality of second electrodes 192 corresponding to the UBM and / or forming solder after a subsequent reflow process, defects DF can serve as a migration path for conductive material, such as solder. In conventional UBMs, the plurality of first electrodes 191 and the plurality of second electrodes 192 are formed between separate light-emitting structures, resulting in short circuit failures between the plurality of first conductive nitride semiconductor layers 110 and between the plurality of first electrodes 191 and the plurality of second electrodes 192.

[0093] According to one or more embodiments, Figure 2C As shown, the plurality of first electrodes 191 and the plurality of second electrodes 192 may be formed above the mesa region M. Therefore, even when a portion is not etched during etching of the non-oxide separation generated when the plurality of first conductive nitride semiconductor layers 110 are formed into the mesa region M, since the plurality of first electrodes 191 and the plurality of second electrodes 192 may be arranged above the mesa region M (i.e., above the second conductive nitride semiconductor layer 130), a short circuit failure caused by movement of materials including electrodes and the like may be prevented.

[0094] While the inventive concepts have been shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made in these exemplary embodiments without departing from the spirit and scope of the claims.

Claims

1. A light-emitting device, comprising: a substrate extending in a first direction and a second direction; first to fourth light-emitting structures, which are spaced apart from each other in a first direction and a second direction and arranged in a matrix on the substrate, the first to fourth light-emitting structures including the first light-emitting structure, the second light-emitting structure, the third light-emitting structure and the fourth light-emitting structure; a plurality of first interconnect layer structures connecting the first light emitting structure to the second light emitting structure; a second interconnect layer structure connecting the second light emitting structure to the third light emitting structure; as well as a plurality of third interconnect layer structures connecting the third light emitting structure to the fourth light emitting structure, Each of the first to fourth light emitting structures includes a first conductive nitride semiconductor layer, an active layer above the first conductive nitride semiconductor layer, and a second conductive nitride semiconductor layer above the active layer. Wherein, the light emitting device further comprises: a first current diffusion layer structure connected to the second conductive nitride semiconductor layer of the first light emitting structure; and A second current diffusion layer structure is connected to the first conductive nitride semiconductor layer of the fourth light emitting structure.

2. The light emitting device according to claim 1, wherein: The plurality of first interconnect layer structures are electrically conductive structures horizontally separated from one another, each of which includes at least a portion formed at a first vertical height above the substrate; the plurality of third interconnect layer structures being conductive structures horizontally separated from one another and from the plurality of first interconnect layer structures, each of which includes at least a portion formed at the first vertical height above the substrate; and The second interconnect layer structure is a conductive structure horizontally separated from the plurality of first interconnect layer structures and the plurality of third interconnect layer structures.

3. The light emitting device according to claim 1, wherein: The plurality of first interconnect layer structures are conductive structures that are horizontally separated from each other and extend longitudinally in the second direction; The plurality of third interconnect layer structures are conductive structures that are horizontally separated from each other and extend longitudinally in the second direction; as well as The second interconnect layer structure is a conductive structure that is horizontally separated from the plurality of first interconnect layer structures and the plurality of third interconnect layer structures and extends longitudinally in the first direction.

4. The light emitting device according to claim 3, wherein: Each of the plurality of first interconnection layer structures electrically connects the first conductive nitride semiconductor layer of the first light emitting structure to the second conductive nitride semiconductor layer of the second light emitting structure; the second interconnection layer structure electrically connecting the first conductive nitride semiconductor layer of the second light emitting structure to the second conductive nitride semiconductor layer of the third light emitting structure; and Each of the plurality of third interconnection layer structures electrically connects the first conductive nitride semiconductor layer of the third light emitting structure to the second conductive nitride semiconductor layer of the fourth light emitting structure.

5. The light emitting device according to claim 4, wherein The plurality of first interconnection layer structures are spaced apart from one another in the first direction, and the plurality of third interconnection layer structures are spaced apart from one another in the first direction. The light emitting device according to claim 4 , wherein: The second interconnection layer structure is connected to at least two portions of each of the first conductive nitride semiconductor layer of the second light emitting structure and the second conductive nitride semiconductor layer of the third light emitting structure.

7. The light emitting device according to claim 4, further comprising: a plurality of first electrodes formed to be electrically connected to the second conductive nitride semiconductor layer of the first light emitting structure; as well as a plurality of second electrodes formed to be electrically connected to the first conductive nitride semiconductor layer of the fourth light emitting structure; wherein the horizontal width of each of the plurality of first electrodes is smaller than the horizontal width of the first conductive nitride semiconductor layer of the first light emitting structure, and The horizontal width of each of the plurality of second electrodes is smaller than the horizontal width of the first conductive nitride semiconductor layer of the fourth light emitting structure.

8. The light emitting device according to claim 7, wherein: Each of the plurality of first electrodes and the plurality of second electrodes vertically overlaps with the corresponding second conductive nitride semiconductor layer, and an entirety of each of the plurality of first electrodes and the plurality of second electrodes vertically overlaps with its corresponding second conductive nitride semiconductor layer.

9. The light emitting device according to claim 7, wherein: The plurality of first electrodes are disposed over the second conductive nitride semiconductor layer of the first and second light emitting structures, and the plurality of second electrodes are disposed over the second conductive nitride semiconductor layer of the third and fourth light emitting structures.

10. The light emitting device according to claim 4, wherein The layout shape of the first current diffusion layer structure and the second current diffusion layer structure is a T-shape.

11. The light emitting device according to claim 10, wherein: The length of the first and second current spreading layer structures in the second direction is greater than the length of each of the plurality of first and third interconnection layer structures in the second direction.

12. The light emitting device according to claim 10, wherein: The plurality of first interconnection layer structures are arranged to be spaced apart from each other with respect to the first current spreading layer structure therebetween.

13. A light-emitting device comprising: a first light emitting structure and a second light emitting structure, each of which includes a first conductive nitride semiconductor layer, an active layer disposed over the first conductive nitride semiconductor layer, and a second conductive nitride semiconductor layer disposed over the active layer, the first light emitting structure and the second light emitting structure being horizontally spaced apart from each other; as well as an interconnection layer connecting the first conductive nitride semiconductor layer of the first light emitting structure to the second conductive nitride semiconductor layer of the second light emitting structure, wherein the interconnection layer is a conductive layer including two portions connected to at least two corresponding portions of each of the first conductive nitride semiconductor layer of the first light emitting structure and the second conductive nitride semiconductor layer of the second light emitting structure, The interconnection layer extends in a first direction, and the total length of the second conductive nitride semiconductor layers of the first light emitting structure and the second light emitting structure in the first direction is smaller than the length of the interconnection layer in the first direction.

14. The light emitting device according to claim 13, wherein: The interconnect layer is conformally formed on one or more layers below the interconnect layer.

15. A light emitting device comprising: a substrate extending in a first direction and a second direction; first to fourth light-emitting structures, which are spaced apart from each other in the first direction and the second direction and arranged in a matrix on the substrate, the first to fourth light-emitting structures including the first light-emitting structure, the second light-emitting structure, the third light-emitting structure, and the fourth light-emitting structure; a plurality of first electrodes connected to the first light emitting structure; as well as a plurality of second electrodes connected to the second light emitting structure; wherein each of the first to fourth light emitting structures includes a first conductive nitride semiconductor layer, an active layer disposed above the first conductive nitride semiconductor layer, and a second conductive nitride semiconductor layer disposed above the active layer; Furthermore, a horizontal width of each of the plurality of first electrodes and the plurality of second electrodes is smaller than a horizontal width of the second conductive nitride semiconductor layer of any one of the first to fourth light emitting structures. Wherein, the light emitting device further comprises: a plurality of first interconnect layer structures connecting the first light emitting structure to the second light emitting structure; and a first current diffusion layer structure vertically disposed between the plurality of first electrodes and the second conductive nitride semiconductor layer, wherein a length of the first current diffusion layer structure in the second direction is greater than a length of each of the plurality of first interconnection layer structures in the second direction.

16. The light emitting device according to claim 15, wherein: The plurality of first electrodes are arranged over the second conductive nitride semiconductor layer of the first and second light emitting structures.

17. The light emitting device according to claim 15, wherein: The plurality of second electrodes are arranged over the second conductive nitride semiconductor layer of the third and fourth light emitting structures.

18. The light emitting device according to claim 15, wherein The plurality of first electrodes and the plurality of second electrodes are formed on the corresponding second conductive nitride semiconductor layer, and an entirety of each of the plurality of first electrodes and the plurality of second electrodes vertically overlaps the corresponding second conductive nitride semiconductor layer.

19. The light emitting device according to claim 15, further comprising: a second current spreading layer vertically arranged between the plurality of second electrodes and the second conductive nitride semiconductor layer, The first current spreading layer and the second current spreading layer are T-shaped.

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